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FR2440079A1 - IMPROVED LOAD TRANSFER ELEMENT - Google Patents

IMPROVED LOAD TRANSFER ELEMENT

Info

Publication number
FR2440079A1
FR2440079A1 FR7926163A FR7926163A FR2440079A1 FR 2440079 A1 FR2440079 A1 FR 2440079A1 FR 7926163 A FR7926163 A FR 7926163A FR 7926163 A FR7926163 A FR 7926163A FR 2440079 A1 FR2440079 A1 FR 2440079A1
Authority
FR
France
Prior art keywords
transistor
load
potential well
channel
transfer element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7926163A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2440079A1 publication Critical patent/FR2440079A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/335—Channel regions of field-effect devices of charge-coupled devices

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

UN CIRCUIT A COUPLAGE DE CHARGES QUI COMPORTE UNE PARTIE SORTIE AYANT UN TRANSISTOR A EFFET DE CHAMP 120 DISPOSE DANS LE CANAL A PUITS DE POTENTIEL 101 POUR DELIVRER UNE LECTURE POUR SORTIE NON DESTRUCTIVE DE LA VALEUR ANALOGIQUE D'UN PAQUET DE CHARGES SITUE DANS LA PARTIE D'UN TEL CANAL A PUITS DE POTENTIEL SITUEE SOUS LE TRANSISTOR. LES ZONES DE DRAIN 133, DE SOURCE 134 ET DE CANAL DU TRANSISTOR SONT DISPOSEES TRANSVERSALEMENT AU COURANT DES PAQUETS DE CHARGE. LA CONDUCTIVITE DU CANAL EST MODULEE EN FONCTION DE LA VALEUR D'UN PAQUET DE CHARGES DANS LE PUITS DE POTENTIEL SITUE SOUS LE TRANSISTOR.A LOAD COUPLING CIRCUIT WHICH INCLUDES AN OUTPUT PART HAVING A FIELD-EFFECT TRANSISTOR 120 PROVIDED IN THE POTENTIAL WELL CHANNEL 101 TO DELIVER A READING FOR NON DESTRUCTIVE OUTPUT OF THE ANALOGUE VALUE OF A LOAD PACKAGE LOCATED IN THE PART OF SUCH A POTENTIAL WELL CANAL LOCATED UNDER THE TRANSISTOR. THE DRAIN 133, SOURCE 134 AND CHANNEL AREAS OF THE TRANSISTOR ARE ARRANGED CROSS-CUT TO THE CURRENT OF THE LOAD PACKAGES. THE CONDUCTIVITY OF THE CHANNEL IS MODULATED ACCORDING TO THE VALUE OF A LOAD PACKAGE IN THE POTENTIAL WELL LOCATED UNDER THE TRANSISTOR.

FR7926163A 1978-10-23 1979-10-22 IMPROVED LOAD TRANSFER ELEMENT Withdrawn FR2440079A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US95380878A 1978-10-23 1978-10-23

Publications (1)

Publication Number Publication Date
FR2440079A1 true FR2440079A1 (en) 1980-05-23

Family

ID=25494554

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7926163A Withdrawn FR2440079A1 (en) 1978-10-23 1979-10-22 IMPROVED LOAD TRANSFER ELEMENT

Country Status (3)

Country Link
JP (1) JPS5559771A (en)
DE (1) DE2942827A1 (en)
FR (1) FR2440079A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988007766A1 (en) * 1987-03-23 1988-10-06 Eastman Kodak Company Ccd electrometer architecture

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831595B2 (en) * 1988-01-08 1996-03-27 日本電気株式会社 Charge transfer element

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2204013A1 (en) * 1972-10-20 1974-05-17 Westinghouse Electric Corp
US4035667A (en) * 1975-12-02 1977-07-12 International Business Machines Corporation Input circuit for inserting charge packets into a charge-transfer-device
DE2654316A1 (en) * 1976-11-30 1978-06-01 Siemens Ag Charge coupled semiconductor device with insulating layer capacitors - has several contacts on substrate surface with adjacent majority carrier depletion zones
US4118795A (en) * 1976-08-27 1978-10-03 Texas Instruments Incorporated Two-phase CCD regenerator - I/O circuits

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2204013A1 (en) * 1972-10-20 1974-05-17 Westinghouse Electric Corp
US4035667A (en) * 1975-12-02 1977-07-12 International Business Machines Corporation Input circuit for inserting charge packets into a charge-transfer-device
US4118795A (en) * 1976-08-27 1978-10-03 Texas Instruments Incorporated Two-phase CCD regenerator - I/O circuits
DE2654316A1 (en) * 1976-11-30 1978-06-01 Siemens Ag Charge coupled semiconductor device with insulating layer capacitors - has several contacts on substrate surface with adjacent majority carrier depletion zones

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/71 *
EXBK/77 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988007766A1 (en) * 1987-03-23 1988-10-06 Eastman Kodak Company Ccd electrometer architecture

Also Published As

Publication number Publication date
JPS5559771A (en) 1980-05-06
DE2942827A1 (en) 1980-04-30

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Legal Events

Date Code Title Description
ST Notification of lapse