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SE8100148L - MOSFET - Google Patents

MOSFET

Info

Publication number
SE8100148L
SE8100148L SE8100148A SE8100148A SE8100148L SE 8100148 L SE8100148 L SE 8100148L SE 8100148 A SE8100148 A SE 8100148A SE 8100148 A SE8100148 A SE 8100148A SE 8100148 L SE8100148 L SE 8100148L
Authority
SE
Sweden
Prior art keywords
electrode
semiconductor surface
drain region
gate electrode
gate
Prior art date
Application number
SE8100148A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE456291B (en
Inventor
A M Goodman
R U Martinelli
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE8100148L publication Critical patent/SE8100148L/en
Publication of SE456291B publication Critical patent/SE456291B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10W20/495—

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A vertical MOSFET e.g a VDMOS device 50 includes source and gate electrodes 32, 52 on a major semiconductor surface, and a drain electrode 30 on an opposing semiconductor surface. A shield electrode 56 is disposed in proximity to the gate electrode 52 so as to minimize feedback capacitance between the gate electrode and drain region 24,26. Additionally, the shield electrode 56 increases the level of space charge limited current that can be supported in the drain region, and minimizes current crowding in the device. <IMAGE>
SE8100148A 1980-02-22 1981-01-13 VERTICAL MOSPHET DEVICE INCLUDING A COLLECTOR AREA LOCATED ON SCREEN ELECTRODE FOR MINIMIZER MILLER CAPACITANCE AND POWER DISTURBANCE SE456291B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12371580A 1980-02-22 1980-02-22

Publications (2)

Publication Number Publication Date
SE8100148L true SE8100148L (en) 1981-08-23
SE456291B SE456291B (en) 1988-09-19

Family

ID=22410424

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8100148A SE456291B (en) 1980-02-22 1981-01-13 VERTICAL MOSPHET DEVICE INCLUDING A COLLECTOR AREA LOCATED ON SCREEN ELECTRODE FOR MINIMIZER MILLER CAPACITANCE AND POWER DISTURBANCE

Country Status (8)

Country Link
JP (1) JPS56131961A (en)
DE (1) DE3105693A1 (en)
FR (1) FR2476914B1 (en)
GB (1) GB2070331B (en)
IT (1) IT1135091B (en)
PL (1) PL136606B1 (en)
SE (1) SE456291B (en)
YU (1) YU41520B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57141964A (en) * 1981-02-26 1982-09-02 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
DE3210353A1 (en) * 1982-03-20 1983-09-22 Robert Bosch Gmbh, 7000 Stuttgart MONOLITHICALLY INTEGRATED DARLINGTON CIRCUIT
EP0207178A1 (en) * 1985-06-25 1987-01-07 Eaton Corporation Bidirectional power fet with field shaping
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
EP0205639A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Bidirectional power fet with substrate referenced shield
DE3465225D1 (en) * 1983-02-17 1987-09-10 Nissan Motor A vertical-type mosfet and method of fabricating the same
EP0205640A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Lateral bidirectional shielded notch fet
SG165138A1 (en) * 2000-07-12 2010-10-28 Inst Of Microelectronics A semiconductor device
JP5362955B2 (en) * 2003-01-21 2013-12-11 ノース−ウエスト ユニヴァーシティ High-speed switching insulated gate power semiconductor device
US7276747B2 (en) * 2005-04-25 2007-10-02 Semiconductor Components Industries, L.L.C. Semiconductor device having screening electrode and method
CN102569385B (en) * 2010-12-17 2015-04-08 上海华虹宏力半导体制造有限公司 VDMOS (vertical double-diffused metal oxide semiconductor) structure provided with shielding grid and preparation method thereof
CN102569386B (en) * 2010-12-17 2015-02-04 上海华虹宏力半导体制造有限公司 VDMOS (vertical double-diffused metal oxide semiconductor) device with shield grid and preparation method of VDMOS device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1132810A (en) * 1966-03-30 1968-11-06 Matsushita Electronics Corp Field-effect transistor having insulated gates
GB1316555A (en) * 1969-08-12 1973-05-09
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device
GB1423449A (en) * 1973-07-27 1976-02-04 Standard Telephones Cables Ltd Semiconductor device
JPS52106688A (en) * 1976-03-05 1977-09-07 Nec Corp Field-effect transistor

Also Published As

Publication number Publication date
GB2070331B (en) 1984-05-23
PL229786A1 (en) 1981-09-18
YU41520B (en) 1987-08-31
IT1135091B (en) 1986-08-20
FR2476914B1 (en) 1985-10-18
JPH0213830B2 (en) 1990-04-05
PL136606B1 (en) 1986-03-31
SE456291B (en) 1988-09-19
DE3105693C2 (en) 1992-12-10
DE3105693A1 (en) 1981-11-26
JPS56131961A (en) 1981-10-15
FR2476914A1 (en) 1981-08-28
IT8119216A0 (en) 1981-01-20
GB2070331A (en) 1981-09-03
YU42481A (en) 1983-06-30

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