Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D64/00—Electrodes of devices having potential barriers
  • H10D64/111—Field plates
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/01—Manufacture or treatment
  • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
  • H10B12/03—Making the capacitor or connections thereto
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/113—Isolations within a component, i.e. internal isolations
  • H10D62/115—Dielectric isolations, e.g. air gaps
  • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
  • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
  • H10D84/813—Combinations of field-effect devices and capacitor only

Landscapes

• Engineering & Computer Science (AREA)
• Computer Hardware Design (AREA)
• Power Engineering (AREA)
• Manufacturing & Machinery (AREA)
• Semiconductor Memories (AREA)
• Semiconductor Integrated Circuits (AREA)
• Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
• Non-Volatile Memory (AREA)
• Element Separation (AREA)

Applications Claiming Priority (1)

Publications (2)

Family

ID=24473746

Family Applications (1)

Country Status (8)

Cited By (1)

Families Citing this family (49)

Family Cites Families (4)

• 1975
  • 1975-09-29 US US05/617,462 patent/US4021789A/en not_active Expired - Lifetime
• 1976
  • 1976-08-24 NL NL7609377A patent/NL7609377A/xx not_active Application Discontinuation
  • 1976-08-25 FR FR7626312A patent/FR2326038A1/fr active Granted
  • 1976-08-27 JP JP51101756A patent/JPS5242382A/ja active Granted
  • 1976-08-31 GB GB36053/76A patent/GB1496119A/en not_active Expired
  • 1976-09-17 IT IT27306/76A patent/IT1070004B/it active
  • 1976-09-21 DE DE19762642303 patent/DE2642303A1/de not_active Withdrawn
  • 1976-09-27 CA CA262,156A patent/CA1043467A/fr not_active Expired

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