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FR2309036A1 - Dispositif semiconducteur et son procede de fabrication - Google Patents

Dispositif semiconducteur et son procede de fabrication

Info

Publication number
FR2309036A1
FR2309036A1 FR7611731A FR7611731A FR2309036A1 FR 2309036 A1 FR2309036 A1 FR 2309036A1 FR 7611731 A FR7611731 A FR 7611731A FR 7611731 A FR7611731 A FR 7611731A FR 2309036 A1 FR2309036 A1 FR 2309036A1
Authority
FR
France
Prior art keywords
semiconductor device
manufacturing process
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7611731A
Other languages
English (en)
Other versions
FR2309036B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2309036A1 publication Critical patent/FR2309036A1/fr
Application granted granted Critical
Publication of FR2309036B1 publication Critical patent/FR2309036B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P30/204—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H10P30/208—
    • H10P95/00—
    • H10W74/131—
    • H10W74/43—
    • H10P14/69215—
    • H10P14/69433—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/061—Gettering-armorphous layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/112—Nitridation, direct, of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer
FR7611731A 1975-04-21 1976-04-21 Dispositif semiconducteur et son procede de fabrication Granted FR2309036A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50048378A JPS6041458B2 (ja) 1975-04-21 1975-04-21 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
FR2309036A1 true FR2309036A1 (fr) 1976-11-19
FR2309036B1 FR2309036B1 (fr) 1980-07-25

Family

ID=12801650

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7611731A Granted FR2309036A1 (fr) 1975-04-21 1976-04-21 Dispositif semiconducteur et son procede de fabrication

Country Status (7)

Country Link
US (1) US4084986A (fr)
JP (1) JPS6041458B2 (fr)
CA (1) CA1071772A (fr)
DE (1) DE2617397A1 (fr)
FR (1) FR2309036A1 (fr)
GB (1) GB1536719A (fr)
NL (1) NL7604237A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2371779A1 (fr) * 1976-11-19 1978-06-16 Philips Nv Dispositif semi-conducteur a faible capacite parasite et son procede de fabrication
FR2382095A1 (fr) * 1977-02-24 1978-09-22 Rca Corp Structure de passivation en plusieurs couches et procede de fabrication
EP0137319A3 (en) * 1983-09-26 1985-08-14 Kabushiki Kaisha Toshiba Semiconductor device and a method of manufacturing the same

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4105805A (en) * 1976-12-29 1978-08-08 The United States Of America As Represented By The Secretary Of The Army Formation of metal nitride oxide semiconductor (MNOS) by ion implantation of oxygen through a silicon nitride layer
DE2730367A1 (de) * 1977-07-05 1979-01-18 Siemens Ag Verfahren zum passivieren von halbleiterelementen
JPS5841659B2 (ja) * 1977-08-30 1983-09-13 株式会社東芝 絶縁膜の形成方法
JPS5721856B2 (en) * 1977-11-28 1982-05-10 Nippon Telegraph & Telephone Semiconductor and its manufacture
US4742384A (en) * 1978-02-01 1988-05-03 Rca Corporation Structure for passivating a PN junction
US4473597A (en) * 1978-02-01 1984-09-25 Rca Corporation Method and structure for passivating a PN junction
JPS5939906B2 (ja) * 1978-05-04 1984-09-27 超エル・エス・アイ技術研究組合 半導体装置の製造方法
DE2836911C2 (de) * 1978-08-23 1986-11-06 Siemens AG, 1000 Berlin und 8000 München Passivierungsschicht für Halbleiterbauelemente
US4242697A (en) * 1979-03-14 1980-12-30 Bell Telephone Laboratories, Incorporated Dielectrically isolated high voltage semiconductor devices
FR2459551A1 (fr) * 1979-06-19 1981-01-09 Thomson Csf Procede et structure de passivation a autoalignement sur l'emplacement d'un masque
JPS5640269A (en) * 1979-09-11 1981-04-16 Toshiba Corp Preparation of semiconductor device
JPS5679449A (en) * 1979-11-30 1981-06-30 Mitsubishi Electric Corp Production of semiconductor device
US4315782A (en) * 1980-07-21 1982-02-16 Rca Corporation Method of making semiconductor device with passivated rectifying junctions having hydrogenated amorphous regions
US4803528A (en) * 1980-07-28 1989-02-07 General Electric Company Insulating film having electrically conducting portions
US4339285A (en) * 1980-07-28 1982-07-13 Rca Corporation Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation
US4430404A (en) 1981-04-30 1984-02-07 Hitachi, Ltd. Electrophotographic photosensitive material having thin amorphous silicon protective layer
US4420765A (en) * 1981-05-29 1983-12-13 Rca Corporation Multi-layer passivant system
US4466176A (en) * 1982-08-09 1984-08-21 General Electric Company Process for manufacturing insulated-gate semiconductor devices with integral shorts
US4417385A (en) * 1982-08-09 1983-11-29 General Electric Company Processes for manufacturing insulated-gate semiconductor devices with integral shorts
JPS6242829U (fr) * 1985-08-30 1987-03-14
US4814285A (en) * 1985-09-23 1989-03-21 Harris Corp. Method for forming planarized interconnect level using selective deposition and ion implantation
JPS6276673A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 高耐圧半導体装置
GB2183905B (en) * 1985-11-18 1989-10-04 Plessey Co Plc Method of semiconductor device manufacture
DE3542166A1 (de) * 1985-11-29 1987-06-04 Telefunken Electronic Gmbh Halbleiterbauelement
US4705760A (en) * 1986-01-16 1987-11-10 Rca Corporation Preparation of a surface for deposition of a passinating layer
US4682407A (en) * 1986-01-21 1987-07-28 Motorola, Inc. Means and method for stabilizing polycrystalline semiconductor layers
US4740481A (en) * 1986-01-21 1988-04-26 Motorola Inc. Method of preventing hillock formation in polysilicon layer by oxygen implanation
USH948H (en) 1986-12-01 1991-08-06 The United States Of America As Represented By The Secretary Of The Navy Semiconductor-semiconductor compound insulator-insulator structures
KR900005038B1 (ko) * 1987-07-31 1990-07-18 삼성전자 주식회사 고저항 다결정 실리콘의 제조방법
US4993427A (en) * 1989-11-09 1991-02-19 Sonotek Corporation Heart contraction monitor
JP2601136B2 (ja) * 1993-05-07 1997-04-16 日本電気株式会社 半導体装置の製造方法
GB2323703B (en) * 1997-03-13 2002-02-13 United Microelectronics Corp Method to inhibit the formation of ion implantation induced edge defects
US5930659A (en) * 1997-12-05 1999-07-27 Advanced Microdevices, Inc. Forming minimal size spaces in integrated circuit conductive lines
US6046109A (en) * 1997-12-29 2000-04-04 Industrial Technology Research Institute Creation of local semi-insulating regions on semiconductor substrates
US6458645B2 (en) * 1998-02-26 2002-10-01 Micron Technology, Inc. Capacitor having tantalum oxynitride film and method for making same
US6995821B1 (en) * 1999-04-23 2006-02-07 International Business Machines Corporation Methods of reducing unbalanced DC voltage between two electrodes of reflective liquid crystal display by thin film passivation
US6635983B1 (en) * 1999-09-02 2003-10-21 Micron Technology, Inc. Nitrogen and phosphorus doped amorphous silicon as resistor for field emission device baseplate
KR100711000B1 (ko) * 2005-11-28 2007-04-24 동부일렉트로닉스 주식회사 이중 게이트를 구비한 모스트랜지스터 및 그 제조방법
JP5195186B2 (ja) * 2008-09-05 2013-05-08 三菱電機株式会社 半導体装置の製造方法
US20150050816A1 (en) * 2013-08-19 2015-02-19 Korea Atomic Energy Research Institute Method of electrochemically preparing silicon film
CN113774494B (zh) * 2021-11-15 2022-03-29 浙江大学杭州国际科创中心 一种半绝缘型碳化硅单晶片剥离方法及剥离装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3563809A (en) * 1968-08-05 1971-02-16 Hughes Aircraft Co Method of making semiconductor devices with ion beams
JPS4936792B1 (fr) * 1970-10-15 1974-10-03
US3897274A (en) * 1971-06-01 1975-07-29 Texas Instruments Inc Method of fabricating dielectrically isolated semiconductor structures
JPS4939235A (fr) * 1972-08-24 1974-04-12
US3900345A (en) * 1973-08-02 1975-08-19 Motorola Inc Thin low temperature epi regions by conversion of an amorphous layer
JPS532552B2 (fr) * 1974-03-30 1978-01-28

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
EXBK/71 *
NV362/76 *
NV931/75 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2371779A1 (fr) * 1976-11-19 1978-06-16 Philips Nv Dispositif semi-conducteur a faible capacite parasite et son procede de fabrication
FR2382095A1 (fr) * 1977-02-24 1978-09-22 Rca Corp Structure de passivation en plusieurs couches et procede de fabrication
EP0137319A3 (en) * 1983-09-26 1985-08-14 Kabushiki Kaisha Toshiba Semiconductor device and a method of manufacturing the same
US4585489A (en) * 1983-09-26 1986-04-29 Kabushiki Kaisha Toshiba Method of controlling lifetime of minority carriers by electron beam irradiation through semi-insulating layer

Also Published As

Publication number Publication date
US4084986A (en) 1978-04-18
DE2617397A1 (de) 1976-11-04
NL7604237A (nl) 1976-10-25
FR2309036B1 (fr) 1980-07-25
JPS6041458B2 (ja) 1985-09-17
JPS51123561A (en) 1976-10-28
GB1536719A (en) 1978-12-20
CA1071772A (fr) 1980-02-12

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ST Notification of lapse