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FR1118302A - Perfectionnements aux amplificateurs à semi-conducteurs - Google Patents

Perfectionnements aux amplificateurs à semi-conducteurs

Info

Publication number
FR1118302A
FR1118302A FR1118302DA FR1118302A FR 1118302 A FR1118302 A FR 1118302A FR 1118302D A FR1118302D A FR 1118302DA FR 1118302 A FR1118302 A FR 1118302A
Authority
FR
France
Prior art keywords
solid
state amplifiers
amplifiers
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Marconis Wireless Telegraph Co Ltd
BAE Systems Electronics Ltd
Original Assignee
Marconis Wireless Telegraph Co Ltd
Marconi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marconis Wireless Telegraph Co Ltd, Marconi Co Ltd filed Critical Marconis Wireless Telegraph Co Ltd
Application granted granted Critical
Publication of FR1118302A publication Critical patent/FR1118302A/fr
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/46—
FR1118302D 1954-01-28 1955-01-27 Perfectionnements aux amplificateurs à semi-conducteurs Expired FR1118302A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2665/54A GB774388A (en) 1954-01-28 1954-01-28 Improvements in or relating to semi-conducting amplifiers

Publications (1)

Publication Number Publication Date
FR1118302A true FR1118302A (fr) 1956-06-04

Family

ID=9743615

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1118302D Expired FR1118302A (fr) 1954-01-28 1955-01-27 Perfectionnements aux amplificateurs à semi-conducteurs

Country Status (4)

Country Link
US (1) US2840885A (fr)
DE (1) DE1029483B (fr)
FR (1) FR1118302A (fr)
GB (1) GB774388A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1084839B (de) * 1956-10-17 1960-07-07 Gen Electric Flaechentransistor mit einer teilweise negativen Widerstandscharakteristik und einem plattenfoermigen Halbleiterkoerper eines Leitungstyps
DE1117221B (de) * 1957-04-24 1961-11-16 Sarkes Tarean Inc Chemisches AEtzverfahren zur Verbesserung des Sperrwiderstandes von Halbleitergleichrichtern aus N-Silizium oder N-Germanium

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE553205A (fr) * 1955-03-10
US2897587A (en) * 1955-05-23 1959-08-04 Philco Corp Method of fabricating semiconductor devices
BE562490A (fr) * 1956-03-05 1900-01-01
US3041226A (en) * 1958-04-02 1962-06-26 Hughes Aircraft Co Method of preparing semiconductor crystals
NL134389C (fr) * 1958-07-02
DE1097039B (de) * 1958-07-02 1961-01-12 Licentia Gmbh Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Halbleiteranordnungen
NL134168C (fr) * 1958-07-29
NL241982A (fr) * 1958-08-13 1900-01-01
US3012921A (en) * 1958-08-20 1961-12-12 Philco Corp Controlled jet etching of semiconductor units
US3073006A (en) * 1958-09-16 1963-01-15 Westinghouse Electric Corp Method and apparatus for the fabrication of alloyed transistors
DE1132247B (de) * 1959-01-30 1962-06-28 Siemens Ag Gesteuerte Vierschichtentriode mit vier Halbleiterschichten abwechselnden Leitfaehigkeitstyps
DE1225765C2 (de) * 1959-03-11 1973-05-17 Maurice Gilbert Anatole Bernar Elektrischer Kondensator mit spannungsabhaengiger Kapazitaet, bestehend aus einem Halbleiterkoerper
DE1137140B (de) * 1959-04-06 1962-09-27 Int Standard Electric Corp Verfahren zum Herstellen von elektrischen Halbleiterbauelementen mit verminderter Oberflaechenleitfaehigkeit am p-n-UEbergang und verminderter Alterung
US3257588A (en) * 1959-04-27 1966-06-21 Rca Corp Semiconductor device enclosures
US3197839A (en) * 1959-12-11 1965-08-03 Gen Electric Method of fabricating semiconductor devices
DE1126514B (de) * 1960-01-29 1962-03-29 Intermetall Verfahren zur Herstellung von Zenerdioden mit einem Halbleiterkoerper eines Leitfaehigkeitstyps
DE1157315B (de) * 1960-05-27 1963-11-14 Pacific Semiconductors Inc Flaechentransistor mit einem Halbleiterkoerper mit drei Zonen abwechselnden Leitungstyps und Verfahren zum Herstellen
DE1149824B (de) * 1960-07-08 1963-06-06 Licentia Gmbh Legierungsverfahren zum Herstellen von pn-UEbergaengen sowie nn- oder pp-UEbergaengen in Siliziumkoerpern
NL266775A (fr) * 1960-07-08
US3116184A (en) * 1960-12-16 1963-12-31 Bell Telephone Labor Inc Etching of germanium surfaces prior to evaporation of aluminum
NL280849A (fr) * 1961-07-12 1900-01-01
US3492546A (en) * 1964-07-27 1970-01-27 Raytheon Co Contact for semiconductor device
DE1489517A1 (de) * 1965-07-07 1969-05-14 Siemens Ag Lumineszenzdiode mit einem A?-Halbleiter-Einkristall und einem durch Legieren hergestellten ebenen pn-UEbergang

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2656496A (en) * 1951-07-31 1953-10-20 Bell Telephone Labor Inc Semiconductor translating device
NL176299B (nl) * 1952-03-10 Hydrotech Int Inc Inrichting voor het losneembaar afsluiten van pijpleidingen.
US2713132A (en) * 1952-10-14 1955-07-12 Int Standard Electric Corp Electric rectifying devices employing semiconductors
BE525428A (fr) * 1952-12-30
US2725505A (en) * 1953-11-30 1955-11-29 Rca Corp Semiconductor power devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1084839B (de) * 1956-10-17 1960-07-07 Gen Electric Flaechentransistor mit einer teilweise negativen Widerstandscharakteristik und einem plattenfoermigen Halbleiterkoerper eines Leitungstyps
DE1117221B (de) * 1957-04-24 1961-11-16 Sarkes Tarean Inc Chemisches AEtzverfahren zur Verbesserung des Sperrwiderstandes von Halbleitergleichrichtern aus N-Silizium oder N-Germanium

Also Published As

Publication number Publication date
GB774388A (en) 1957-05-08
DE1029483B (de) 1958-05-08
US2840885A (en) 1958-07-01

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