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FI981262L - Menetelmä ohutkalvo-elektroluminesenssirakenteiden kasvattamiseksi - Google Patents

Menetelmä ohutkalvo-elektroluminesenssirakenteiden kasvattamiseksi Download PDF

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Publication number
FI981262L
FI981262L FI981262A FI981262A FI981262L FI 981262 L FI981262 L FI 981262L FI 981262 A FI981262 A FI 981262A FI 981262 A FI981262 A FI 981262A FI 981262 L FI981262 L FI 981262L
Authority
FI
Finland
Prior art keywords
thin film
film electroluminescent
growing thin
electroluminescent structures
structures
Prior art date
Application number
FI981262A
Other languages
English (en)
Swedish (sv)
Other versions
FI105313B (fi
FI981262A0 (fi
Inventor
Gitte Haerkoenen
Tomi Kervinen
Erkki Soininen
Runar Toernqvist
Kirsi Vasama
Mario Glanz
Herbert Schumann
Original Assignee
Planar Systems Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Planar Systems Oy filed Critical Planar Systems Oy
Priority to FI981262A priority Critical patent/FI105313B/fi
Publication of FI981262A0 publication Critical patent/FI981262A0/fi
Priority to US09/323,821 priority patent/US6248605B1/en
Priority to DE19925430A priority patent/DE19925430A1/de
Priority to JP15668299A priority patent/JP4213295B2/ja
Publication of FI981262L publication Critical patent/FI981262L/fi
Application granted granted Critical
Publication of FI105313B publication Critical patent/FI105313B/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
    • C09K11/7716—Chalcogenides
    • C09K11/7718—Chalcogenides with alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
  • Surface Treatment Of Glass (AREA)
FI981262A 1998-06-03 1998-06-03 Menetelmä ohutkalvo-elektroluminesenssirakenteiden kasvattamiseksi FI105313B (fi)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FI981262A FI105313B (fi) 1998-06-03 1998-06-03 Menetelmä ohutkalvo-elektroluminesenssirakenteiden kasvattamiseksi
US09/323,821 US6248605B1 (en) 1998-06-03 1999-06-02 Method of growing thin film electroluminescent structures
DE19925430A DE19925430A1 (de) 1998-06-03 1999-06-02 Verfahren zum Wachsenlassen von Dünnfilm-Elektrolumineszenz-Strukturen
JP15668299A JP4213295B2 (ja) 1998-06-03 1999-06-03 薄膜エレクトロルミネセンス構造を成長させる方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI981262 1998-06-03
FI981262A FI105313B (fi) 1998-06-03 1998-06-03 Menetelmä ohutkalvo-elektroluminesenssirakenteiden kasvattamiseksi

Publications (3)

Publication Number Publication Date
FI981262A0 FI981262A0 (fi) 1998-06-03
FI981262L true FI981262L (fi) 1999-12-04
FI105313B FI105313B (fi) 2000-07-14

Family

ID=8551895

Family Applications (1)

Application Number Title Priority Date Filing Date
FI981262A FI105313B (fi) 1998-06-03 1998-06-03 Menetelmä ohutkalvo-elektroluminesenssirakenteiden kasvattamiseksi

Country Status (4)

Country Link
US (1) US6248605B1 (fi)
JP (1) JP4213295B2 (fi)
DE (1) DE19925430A1 (fi)
FI (1) FI105313B (fi)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US20020083897A1 (en) * 2000-12-29 2002-07-04 Applied Materials, Inc. Full glass substrate deposition in plasma enhanced chemical vapor deposition
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6825447B2 (en) * 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6811814B2 (en) 2001-01-16 2004-11-02 Applied Materials, Inc. Method for growing thin films by catalytic enhancement
US20020127336A1 (en) * 2001-01-16 2002-09-12 Applied Materials, Inc. Method for growing thin films by catalytic enhancement
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US6828218B2 (en) 2001-05-31 2004-12-07 Samsung Electronics Co., Ltd. Method of forming a thin film using atomic layer deposition
KR100522765B1 (ko) * 2001-07-03 2005-10-19 주식회사 컴텍스 반도체소자용 기판의 제조방법
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US20030194825A1 (en) * 2002-04-10 2003-10-16 Kam Law Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applications
US6869838B2 (en) * 2002-04-09 2005-03-22 Applied Materials, Inc. Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US6863825B2 (en) 2003-01-29 2005-03-08 Union Oil Company Of California Process for removing arsenic from aqueous streams
US7294360B2 (en) * 2003-03-31 2007-11-13 Planar Systems, Inc. Conformal coatings for micro-optical elements, and method for making the same
KR20060079144A (ko) 2003-06-18 2006-07-05 어플라이드 머티어리얼스, 인코포레이티드 배리어 물질의 원자층 증착
US7582161B2 (en) 2006-04-07 2009-09-01 Micron Technology, Inc. Atomic layer deposited titanium-doped indium oxide films
US8066874B2 (en) 2006-12-28 2011-11-29 Molycorp Minerals, Llc Apparatus for treating a flow of an aqueous solution containing arsenic
US8349764B2 (en) 2007-10-31 2013-01-08 Molycorp Minerals, Llc Composition for treating a fluid
US8252087B2 (en) 2007-10-31 2012-08-28 Molycorp Minerals, Llc Process and apparatus for treating a gas containing a contaminant
US8383525B2 (en) 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
TWI467045B (zh) * 2008-05-23 2015-01-01 Sigma Aldrich Co 高介電常數電介質薄膜與使用鈰基前驅物製造高介電常數電介質薄膜之方法
WO2009143452A1 (en) * 2008-05-23 2009-11-26 Sigma-Aldrich Co. High-k dielectric films and methods of producing using cerium-based precursors
US9233863B2 (en) 2011-04-13 2016-01-12 Molycorp Minerals, Llc Rare earth removal of hydrated and hydroxyl species
US9478419B2 (en) * 2013-12-18 2016-10-25 Asm Ip Holding B.V. Sulfur-containing thin films
US9245742B2 (en) 2013-12-18 2016-01-26 Asm Ip Holding B.V. Sulfur-containing thin films
AU2015226889B2 (en) 2014-03-07 2019-09-19 Secure Natural Resources Llc Cerium (IV) oxide with exceptional arsenic removal properties
US10490475B2 (en) 2015-06-03 2019-11-26 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation after oxide removal
US9711350B2 (en) 2015-06-03 2017-07-18 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation
US9741815B2 (en) 2015-06-16 2017-08-22 Asm Ip Holding B.V. Metal selenide and metal telluride thin films for semiconductor device applications
US9711396B2 (en) * 2015-06-16 2017-07-18 Asm Ip Holding B.V. Method for forming metal chalcogenide thin films on a semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH086086B2 (ja) * 1985-09-30 1996-01-24 株式会社リコー 白色エレクトロルミネツセンス素子
EP0267377B1 (en) * 1986-09-16 1993-02-03 Hitachi, Ltd. Electroluminescent display apparatus and process for producing the same
JPH05315075A (ja) * 1992-05-07 1993-11-26 Fuji Electric Co Ltd エレクトロルミネッセンス発光膜の成膜方法
JP3618110B2 (ja) 1993-08-30 2005-02-09 株式会社デンソー エレクトロルミネッセンス素子の製法
US6004618A (en) * 1994-04-26 1999-12-21 Nippondenso., Ltd. Method and apparatus for fabricating electroluminescent device
US5677594A (en) * 1995-08-01 1997-10-14 Sun; Sey-Shing TFEL phosphor having metal overlayer

Also Published As

Publication number Publication date
DE19925430A1 (de) 1999-12-09
FI105313B (fi) 2000-07-14
US6248605B1 (en) 2001-06-19
JP4213295B2 (ja) 2009-01-21
JP2000087029A (ja) 2000-03-28
FI981262A0 (fi) 1998-06-03

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