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FI20095796L - Menetelmä integraatiotiheydeltään korkean kuva-anturin valmistamiseksi - Google Patents

Menetelmä integraatiotiheydeltään korkean kuva-anturin valmistamiseksi Download PDF

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Publication number
FI20095796L
FI20095796L FI20095796A FI20095796A FI20095796L FI 20095796 L FI20095796 L FI 20095796L FI 20095796 A FI20095796 A FI 20095796A FI 20095796 A FI20095796 A FI 20095796A FI 20095796 L FI20095796 L FI 20095796L
Authority
FI
Finland
Prior art keywords
substrate
thinned
manufacturing
image sensor
conducting
Prior art date
Application number
FI20095796A
Other languages
English (en)
Swedish (sv)
Other versions
FI20095796A7 (fi
Inventor
Eric Pourquier
Original Assignee
E2V Semiconductors
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E2V Semiconductors filed Critical E2V Semiconductors
Publication of FI20095796L publication Critical patent/FI20095796L/fi
Publication of FI20095796A7 publication Critical patent/FI20095796A7/fi

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H10W99/00—

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FI20095796A 2006-12-20 2007-12-11 Menetelmä integraatiotiheydeltään korkean kuva-anturin valmistamiseksi FI20095796A7 (fi)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0611082A FR2910707B1 (fr) 2006-12-20 2006-12-20 Capteur d'image a haute densite d'integration
PCT/EP2007/063664 WO2008074688A1 (fr) 2006-12-20 2007-12-11 Procede de fabrication de capteur d'image a haute densite d'integration

Publications (2)

Publication Number Publication Date
FI20095796L true FI20095796L (fi) 2009-07-17
FI20095796A7 FI20095796A7 (fi) 2009-07-17

Family

ID=38255891

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20095796A FI20095796A7 (fi) 2006-12-20 2007-12-11 Menetelmä integraatiotiheydeltään korkean kuva-anturin valmistamiseksi

Country Status (5)

Country Link
US (1) US8003433B2 (fi)
JP (1) JP5250911B2 (fi)
FI (1) FI20095796A7 (fi)
FR (1) FR2910707B1 (fi)
WO (1) WO2008074688A1 (fi)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
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JP5367323B2 (ja) * 2008-07-23 2013-12-11 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
FR2937790B1 (fr) * 2008-10-28 2011-03-25 E2V Semiconductors Capteur d'image aminci
JP5178569B2 (ja) 2009-02-13 2013-04-10 株式会社東芝 固体撮像装置
FR2943177B1 (fr) 2009-03-12 2011-05-06 Soitec Silicon On Insulator Procede de fabrication d'une structure multicouche avec report de couche circuit
JP5773379B2 (ja) * 2009-03-19 2015-09-02 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP5985136B2 (ja) * 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
FR2947380B1 (fr) * 2009-06-26 2012-12-14 Soitec Silicon Insulator Technologies Procede de collage par adhesion moleculaire.
KR101648200B1 (ko) 2009-10-22 2016-08-12 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP5442394B2 (ja) 2009-10-29 2014-03-12 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
TWI420662B (zh) * 2009-12-25 2013-12-21 新力股份有限公司 半導體元件及其製造方法，及電子裝置
JP5853351B2 (ja) 2010-03-25 2016-02-09 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器
JP5553693B2 (ja) 2010-06-30 2014-07-16 キヤノン株式会社 固体撮像装置及び撮像システム
JP6173410B2 (ja) * 2010-06-30 2017-08-02 キヤノン株式会社 固体撮像装置および固体撮像装置の製造方法
JP2012064709A (ja) 2010-09-15 2012-03-29 Sony Corp 固体撮像装置及び電子機器
JP2012094720A (ja) 2010-10-27 2012-05-17 Sony Corp 固体撮像装置、半導体装置、固体撮像装置の製造方法、半導体装置の製造方法、及び電子機器
TWI467746B (zh) * 2010-12-15 2015-01-01 新力股份有限公司 半導體元件及其製造方法與電子裝置
JP2013077711A (ja) 2011-09-30 2013-04-25 Sony Corp 半導体装置および半導体装置の製造方法
JP5970826B2 (ja) * 2012-01-18 2016-08-17 ソニー株式会社 半導体装置、半導体装置の製造方法、固体撮像装置および電子機器
JP6214132B2 (ja) 2012-02-29 2017-10-18 キヤノン株式会社 光電変換装置、撮像システムおよび光電変換装置の製造方法
DE102013217577A1 (de) * 2013-09-04 2015-03-05 Conti Temic Microelectronic Gmbh Kamerasystem für ein Fahrzeug
JP2015135839A (ja) * 2014-01-16 2015-07-27 オリンパス株式会社 半導体装置、固体撮像装置、および撮像装置
JP6079807B2 (ja) * 2015-03-24 2017-02-15 ソニー株式会社 固体撮像装置及び電子機器
US9704827B2 (en) 2015-06-25 2017-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid bond pad structure
JP6233376B2 (ja) * 2015-09-28 2017-11-22 ソニー株式会社 固体撮像装置及び電子機器
JP6256562B2 (ja) * 2016-10-13 2018-01-10 ソニー株式会社 固体撮像装置及び電子機器
JP6746547B2 (ja) * 2017-09-12 2020-08-26 キヤノン株式会社 光電変換装置、撮像システムおよび光電変換装置の製造方法
JP2018078305A (ja) * 2017-12-07 2018-05-17 ソニー株式会社 固体撮像装置及び電子機器
JP7116591B2 (ja) * 2018-05-18 2022-08-10 キヤノン株式会社 撮像装置及びその製造方法
JP7034997B2 (ja) * 2019-09-26 2022-03-14 キヤノン株式会社 半導体デバイスおよび装置の製造方法
JP7001120B2 (ja) * 2020-04-14 2022-01-19 ソニーグループ株式会社 固体撮像装置及び電子機器

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Publication number Priority date Publication date Assignee Title
US6897477B2 (en) * 2001-06-01 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device
JP4304927B2 (ja) * 2002-07-16 2009-07-29 ソニー株式会社 固体撮像素子及びその製造方法
US6984816B2 (en) * 2003-08-13 2006-01-10 Motorola, Inc. Vertically integrated photosensor for CMOS imagers
US6927432B2 (en) * 2003-08-13 2005-08-09 Motorola, Inc. Vertically integrated photosensor for CMOS imagers
US6809008B1 (en) * 2003-08-28 2004-10-26 Motorola, Inc. Integrated photosensor for CMOS imagers
US7214999B2 (en) * 2003-10-31 2007-05-08 Motorola, Inc. Integrated photoserver for CMOS imagers
FR2863773B1 (fr) * 2003-12-12 2006-05-19 Atmel Grenoble Sa Procede de fabrication de puces electroniques en silicium aminci
JP4432502B2 (ja) * 2004-01-20 2010-03-17 ソニー株式会社 半導体装置
JP4389626B2 (ja) * 2004-03-29 2009-12-24 ソニー株式会社 固体撮像素子の製造方法
US8049293B2 (en) * 2005-03-07 2011-11-01 Sony Corporation Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device
FR2888043B1 (fr) * 2005-07-01 2007-11-30 Atmel Grenoble Soc Par Actions Capteur d'image a galette de fibres optiques
FR2895566B1 (fr) * 2005-12-23 2008-04-18 Atmel Grenoble Soc Par Actions Capteur d'image aminci a plots de contact isoles par tranchee
FR2910705B1 (fr) * 2006-12-20 2009-02-27 E2V Semiconductors Soc Par Act Structure de plots de connexion pour capteur d'image sur substrat aminci
US7528420B2 (en) * 2007-05-23 2009-05-05 Visera Technologies Company Limited Image sensing devices and methods for fabricating the same

Also Published As

Publication number Publication date
WO2008074688A1 (fr) 2008-06-26
FI20095796A7 (fi) 2009-07-17
FR2910707A1 (fr) 2008-06-27
US8003433B2 (en) 2011-08-23
FR2910707B1 (fr) 2009-06-12
JP5250911B2 (ja) 2013-07-31
JP2010514177A (ja) 2010-04-30
US20090275165A1 (en) 2009-11-05

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