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ES196297U - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number
ES196297U
ES196297U ES0196297U ES196297U ES196297U ES 196297 U ES196297 U ES 196297U ES 0196297 U ES0196297 U ES 0196297U ES 196297 U ES196297 U ES 196297U ES 196297 U ES196297 U ES 196297U
Authority
ES
Spain
Prior art keywords
connectors
translation
machine
semiconductor device
legally binding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES0196297U
Other languages
English (en)
Other versions
ES196297Y (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of ES196297U publication Critical patent/ES196297U/es
Application granted granted Critical
Publication of ES196297Y publication Critical patent/ES196297Y/es
Expired legal-status Critical Current

Links

Classifications

    • H10W70/611—
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H10W70/641—
    • H10W72/536—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/055—Fuse
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Fuses (AREA)
  • Read Only Memory (AREA)
  • Emergency Lowering Means (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

Un dispositivo semiconductor caracterizado que consiste de: un substrato, una formación de componentes semiconductores sobre el substrato, cada uno de los componentes estando asociado eléctricamente con la formación por medio de primero, segundo y tercero conectores, el segundo y tercero conectores estando conectados en serie y los segundos conectores siendo de un material que tiene un coeficiente de calidad de fusible inferior, y una resistividad eléctrica más elevada que el material de los terceros conectores, los segundos conectores teniendo un área de sección transversal más pequeña que los primeros conectores y algunos conectores seleccionados de los segundos por conectores estando en circuito abierto.
ES1970196297U 1970-01-02 1970-12-26 Un dispositivo semiconductor. Expired ES196297Y (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1370A 1970-01-02 1970-01-02

Publications (2)

Publication Number Publication Date
ES196297U true ES196297U (es) 1975-03-01
ES196297Y ES196297Y (es) 1975-08-01

Family

ID=21689487

Family Applications (1)

Application Number Title Priority Date Filing Date
ES1970196297U Expired ES196297Y (es) 1970-01-02 1970-12-26 Un dispositivo semiconductor.

Country Status (14)

Country Link
US (1) US3699395A (es)
JP (1) JPS495599B1 (es)
AT (1) AT311092B (es)
BE (1) BE761172A (es)
CS (1) CS163239B2 (es)
DE (1) DE2063579C3 (es)
ES (1) ES196297Y (es)
FR (1) FR2075108A5 (es)
GB (1) GB1309310A (es)
MY (1) MY7600090A (es)
NL (1) NL7019075A (es)
NO (1) NO129878B (es)
SE (1) SE370143B (es)
ZA (1) ZA706960B (es)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE794202A (fr) * 1972-01-19 1973-05-16 Intel Corp Liaison fusible pour circuit integre sur substrat semi-conducteur pour memoires
JPS5097286A (es) * 1973-12-25 1975-08-02
GB1445479A (en) * 1974-01-22 1976-08-11 Raytheon Co Electrical fuses
US4042950A (en) * 1976-03-01 1977-08-16 Advanced Micro Devices, Inc. Platinum silicide fuse links for integrated circuit devices
FR2422224A1 (fr) * 1978-04-06 1979-11-02 Radiotechnique Compelec Memoire morte programmable a diodes semiconductrices
DE2625089A1 (de) * 1976-06-04 1977-12-15 Bosch Gmbh Robert Anordnung zum auftrennen von leiterbahnen auf integrierten schaltkreisen
DE2842085A1 (de) * 1978-09-27 1980-05-08 Siemens Ag Modular aufgebautes datenverarbeitungssystem fuer funktionsgebundenen einsatz
DE3001522A1 (de) * 1980-01-17 1981-07-30 Bosch Gmbh Robert Elektrisches verbindungssystem fuer gleichrichter
JPS5763854A (en) * 1980-10-07 1982-04-17 Toshiba Corp Semiconductor device
JPS5846174B2 (ja) * 1981-03-03 1983-10-14 株式会社東芝 半導体集積回路
US4442449A (en) * 1981-03-16 1984-04-10 Fairchild Camera And Instrument Corp. Binary germanium-silicon interconnect and electrode structure for integrated circuits
JPS5758783Y2 (es) * 1981-08-13 1982-12-15
DE3276981D1 (en) * 1981-10-09 1987-09-17 Toshiba Kk Semiconductor device having a fuse element
US4814853A (en) * 1981-10-28 1989-03-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device with programmable fuse
US4598462A (en) * 1983-04-07 1986-07-08 Rca Corporation Method for making semiconductor device with integral fuse
US4454002A (en) * 1983-09-19 1984-06-12 Harris Corporation Controlled thermal-oxidation thinning of polycrystalline silicon
JPH0740101B2 (ja) * 1985-04-23 1995-05-01 旭硝子株式会社 薄膜トランジスタ
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
JPH1125829A (ja) * 1997-07-04 1999-01-29 Yazaki Corp 温度ヒューズ及び車両用ワイヤハーネスの異常検出装置
US6549035B1 (en) 1998-09-15 2003-04-15 Actel Corporation High density antifuse based partitioned FPGA architecture
US6507264B1 (en) 2000-08-28 2003-01-14 Littelfuse, Inc. Integral fuse for use in semiconductor packages
US6709980B2 (en) * 2002-05-24 2004-03-23 Micron Technology, Inc. Using stabilizers in electroless solutions to inhibit plating of fuses
US7485944B2 (en) * 2004-10-21 2009-02-03 International Business Machines Corporation Programmable electronic fuse
DE102005024347B8 (de) * 2005-05-27 2010-07-08 Infineon Technologies Ag Elektrisches Bauteil mit abgesichertem Stromzuführungsanschluss
US7986212B2 (en) * 2007-05-15 2011-07-26 Yazaki Corporation Fuse
US20100164677A1 (en) * 2008-12-29 2010-07-01 Chin-Chi Yang Fuse
KR101830139B1 (ko) 2014-09-05 2018-02-20 요코하마 고무 가부시키가이샤 공기입 타이어
US9837770B2 (en) * 2014-11-25 2017-12-05 Honeywell International Inc. Fusible link cable harness and systems and methods for addressing fusible link cable harnesses
JP6256658B1 (ja) 2017-03-07 2018-01-10 横浜ゴム株式会社 空気入りタイヤ
CN116529126A (zh) * 2020-12-25 2023-08-01 日立安斯泰莫株式会社 车载用电子控制装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA752985A (en) * 1967-02-14 J. Rayno Paul Fuse device
US3028659A (en) * 1957-12-27 1962-04-10 Bosch Arma Corp Storage matrix
US3378920A (en) * 1966-01-26 1968-04-23 Air Force Usa Method for producing an interconnection matrix
US3377513A (en) * 1966-05-02 1968-04-09 North American Rockwell Integrated circuit diode matrix
US3401317A (en) * 1966-07-11 1968-09-10 Int Rectifier Corp Fused semiconductor device
FR1529672A (fr) * 1967-03-24 1968-06-21 Lignes Telegraph Telephon Perfectionnements aux éléments de protection du type fusible
DE1764378C3 (de) * 1967-05-30 1973-12-20 Honeywell Information Systems Italia S.P.A., Caluso, Turin (Italien) Integrierte Randschichtdiodenmatrix und Verfahren zu ihrer Herstellung
US3564354A (en) * 1968-12-11 1971-02-16 Signetics Corp Semiconductor structure with fusible link and method

Also Published As

Publication number Publication date
ES196297Y (es) 1975-08-01
DE2063579B2 (de) 1979-05-31
ZA706960B (en) 1971-07-28
MY7600090A (en) 1976-12-31
US3699395A (en) 1972-10-17
GB1309310A (en) 1973-03-07
NO129878B (es) 1974-06-04
JPS495599B1 (es) 1974-02-07
BE761172A (fr) 1971-05-27
DE2063579C3 (de) 1980-01-24
AT311092B (de) 1973-10-25
SU362553A3 (es) 1972-12-13
SE370143B (es) 1974-09-30
FR2075108A5 (es) 1971-10-08
NL7019075A (es) 1971-07-06
CS163239B2 (es) 1975-08-29
DE2063579A1 (de) 1971-07-15

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