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ES316541A1 - Un dispositivo electrico del tipo de red semiconductora o de circuito integrado. - Google Patents

Un dispositivo electrico del tipo de red semiconductora o de circuito integrado.

Info

Publication number
ES316541A1
ES316541A1 ES0316541A ES316541A ES316541A1 ES 316541 A1 ES316541 A1 ES 316541A1 ES 0316541 A ES0316541 A ES 0316541A ES 316541 A ES316541 A ES 316541A ES 316541 A1 ES316541 A1 ES 316541A1
Authority
ES
Spain
Prior art keywords
translation
machine
electrical device
legally binding
google translate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0316541A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of ES316541A1 publication Critical patent/ES316541A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices
    • H10D88/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P95/00
    • H10W20/021
    • H10W20/20
    • H10W70/611
    • H10W90/00
    • H10W90/401
    • H10W99/00
    • H10W72/07251
    • H10W72/20
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/164Three dimensional processing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/98Utilizing process equivalents or options

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Led Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
ES0316541A 1964-08-18 1965-08-17 Un dispositivo electrico del tipo de red semiconductora o de circuito integrado. Expired ES316541A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US39029864A 1964-08-18 1964-08-18

Publications (1)

Publication Number Publication Date
ES316541A1 true ES316541A1 (es) 1966-04-01

Family

ID=23541917

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0316541A Expired ES316541A1 (es) 1964-08-18 1965-08-17 Un dispositivo electrico del tipo de red semiconductora o de circuito integrado.

Country Status (6)

Country Link
US (1) US3748548A (es)
DE (1) DE1514854A1 (es)
ES (1) ES316541A1 (es)
FR (1) FR1454464A (es)
GB (1) GB1112992A (es)
NL (1) NL6510736A (es)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1487945A (en) * 1974-11-20 1977-10-05 Ibm Semiconductor integrated circuit devices
US4104674A (en) * 1977-02-07 1978-08-01 Honeywell Inc. Double sided hybrid mosaic focal plane
DE2832012A1 (de) * 1978-07-20 1980-01-31 Siemens Ag Verfahren zum herstellen einer dreidimensionalen integrierten schaltung
EP0020135A1 (en) * 1979-05-29 1980-12-10 Massachusetts Institute Of Technology Three-dimensional integration by graphoepitaxy
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
NZ195559A (en) * 1979-11-29 1984-03-16 Ris Irrigation Syst Butterfly sprinkler with dust protection for bearing
JPS5832453A (ja) * 1981-08-21 1983-02-25 Hitachi Ltd 光を用いた電子回路部材
US4453176A (en) * 1981-12-31 1984-06-05 International Business Machines Corporation LSI Chip carrier with buried repairable capacitor with low inductance leads
US4484213A (en) * 1982-02-19 1984-11-20 Solitron Devices, Inc. Binary weighted resistor and package
US4754316A (en) * 1982-06-03 1988-06-28 Texas Instruments Incorporated Solid state interconnection system for three dimensional integrated circuit structures
US4954458A (en) * 1982-06-03 1990-09-04 Texas Instruments Incorporated Method of forming a three dimensional integrated circuit structure
US4533833A (en) * 1982-08-19 1985-08-06 At&T Bell Laboratories Optically coupled integrated circuit array
GB2150749B (en) * 1983-12-03 1987-09-23 Standard Telephones Cables Ltd Integrated circuits
GB2152749A (en) * 1984-01-14 1985-08-07 Peter Michael Jeffery Morrish Interconnection of integrated circuitry by light
JP2611162B2 (ja) * 1985-01-30 1997-05-21 工業技術院長 オーミツク電極の形成方法
GB8506714D0 (en) * 1985-03-15 1985-04-17 Smiths Industries Plc Electronic circuit assemblies
WO1987004566A1 (en) * 1986-01-21 1987-07-30 American Telephone & Telegraph Company Interconnects for wafer-scale-integrated assembly
US5312765A (en) * 1991-06-28 1994-05-17 Hughes Aircraft Company Method of fabricating three dimensional gallium arsenide microelectronic device
US5475262A (en) * 1992-08-07 1995-12-12 Fujitsu Limited Functional substrates for packaging semiconductor chips
US5382827A (en) * 1992-08-07 1995-01-17 Fujitsu Limited Functional substrates for packaging semiconductor chips
US5601909A (en) * 1993-12-07 1997-02-11 Kubo; Tetsujiro Permanent electrode carrier using tourmaline
EP0725981B1 (en) * 1994-08-25 2002-01-02 National Semiconductor Corporation Component stacking in multi-chip semiconductor packages
US5670824A (en) * 1994-12-22 1997-09-23 Pacsetter, Inc. Vertically integrated component assembly incorporating active and passive components
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
US7135753B2 (en) * 2003-12-05 2006-11-14 International Rectifier Corporation Structure and method for III-nitride monolithic power IC

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2913632A (en) * 1955-08-08 1959-11-17 Austin N Stanton Micro-circuits, electric devices there-for, and methods for making same
US3173101A (en) * 1961-02-15 1965-03-09 Westinghouse Electric Corp Monolithic two stage unipolar-bipolar semiconductor amplifier device
US3234057A (en) * 1961-06-23 1966-02-08 Ibm Semiconductor heterojunction device
US3209214A (en) * 1961-09-25 1965-09-28 Westinghouse Electric Corp Monolithic universal logic element
BE623962A (es) * 1961-10-24
US3270235A (en) * 1961-12-21 1966-08-30 Rca Corp Multi-layer semiconductor electroluminescent output device
GB1047388A (es) * 1962-10-05
US3229104A (en) * 1962-12-24 1966-01-11 Ibm Four terminal electro-optical semiconductor device using light coupling
US3372069A (en) * 1963-10-22 1968-03-05 Texas Instruments Inc Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor
US3283160A (en) * 1963-11-26 1966-11-01 Ibm Photoelectronic semiconductor devices comprising an injection luminescent diode and a light sensitive diode with a common n-region

Also Published As

Publication number Publication date
FR1454464A (fr) 1966-02-11
DE1514854A1 (de) 1969-08-21
NL6510736A (es) 1966-02-21
GB1112992A (en) 1968-05-08
US3748548A (en) 1973-07-24

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