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EP1665315B1 - Composant pour la modification de l'impedance dans un guide d'ondes coplanaire, et procede de production d'un tel composant - Google Patents

Composant pour la modification de l'impedance dans un guide d'ondes coplanaire, et procede de production d'un tel composant Download PDF

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Publication number
EP1665315B1
EP1665315B1 EP04762505A EP04762505A EP1665315B1 EP 1665315 B1 EP1665315 B1 EP 1665315B1 EP 04762505 A EP04762505 A EP 04762505A EP 04762505 A EP04762505 A EP 04762505A EP 1665315 B1 EP1665315 B1 EP 1665315B1
Authority
EP
European Patent Office
Prior art keywords
connecting element
bridge
signal line
component
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP04762505A
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German (de)
English (en)
Other versions
EP1665315A1 (fr
Inventor
Roland Mueller-Fiedler
Markus Ulm
Mathias Reimann
Thomas Buck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
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Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP1665315A1 publication Critical patent/EP1665315A1/fr
Application granted granted Critical
Publication of EP1665315B1 publication Critical patent/EP1665315B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49105—Switch making

Definitions

  • the invention relates to a component for impedance change in a coplanar waveguide according to the preamble of claim 1.
  • a thin metal bridge is stretched between ground lines of a coplanar waveguide. Electrostatically, the bridge is pulled onto a thin dielectric deposited on a signal line between the masses, thereby increasing the capacitance of a "plate capacitor” formed of bridge and signal line. This capacitance change affects the propagation characteristics of the electromagnetic waves carried on the waveguide.
  • the metal bridge In the “off” state (the metal bridge is pulled down to the signal line) is a major part of Services are reflected. In the "on” state, on the other hand (the metal bridge is on top), a large part of the power is to be transmitted.
  • a novel grounded coplanar waveguide with cavity structure Mitsubishi Electric Corporation, IEEE 2003, page 140 , a waveguide with a hollow structure is known, in which on the side facing away from a signal line of an insulator, a cavity is formed by a ground cover, which in turn is electrically connected to two ground plates in communication adjacent to the signal line on the signal line side facing the insulator layer are arranged.
  • a disadvantage of the two embodiments listed first is that the electrostatic actuation of the respective bridge, the ground lines or the signal line must be supplied with a DC control voltage.
  • Impedance changing component 101 of a section of waveguide 102 comprises two external ground lines 103, 104 and an intermediate signal line 105.
  • a bridge arrangement 106 with a cantilevered bridge 107 is constructed via ground lines 103, 104 and signal line 105.
  • a section along the section line VV with undeflected bridge 107 and deflected bridge 107 (shown in dashed lines) is in Fig. 5b displayed.
  • the Bridge 107 is stretched between end-to-end galvanized post members 108.
  • the respective ground line 103 and 104 in the region of the bridge 107 has a recess 103a or 104a.
  • the bridge can be acted upon via a terminal 109 with a drive DC voltage with respect to the lines 103, 104, 105 in order to pull the bridge against the lines 103, 104, 105 via electrostatic forces.
  • an insulating layer 110 is laid in the area below the bridge via the lines 103, 104, 105 (see in particular the sectional arrangement).
  • the component 101 can be replaced by an equivalent circuit diagram Fig. 6 in terms of high frequency characteristics. Symmetrically to two line segments 111, 112 with the wave impedance 113 shown symbolically, a grounded branch 114 is derived which has the following components: A first coupling capacitance 115, an inductance 116 and an ohmic resistance 117 followed by a second coupling capacitance 118 Coupling capacity is symbolically connected to a voltage source 119.
  • the first coupling capacitance 115 is defined by the intersection of the signal line 105 with the bridge 107 and can be used according to the in Fig. 5b Two positions of the bridge shown in particular assume two capacitance values.
  • the inductance 116 results from the bridge sections between the signal line 105 and the respective ground line 103, 104. The same sections define the ohmic resistance 117.
  • the coupling capacitance 118 is defined by the sectional area of the bridge 107 with the respective narrow area of the bridge the first coupling capacity 114 according to the in Fig. 5b shown positions of the bridge 107 in particular assume two values.
  • a capacitance change can be realized by about a factor of 100, whereby the component 101 can be used as a high-frequency switch in a predetermined frequency range.
  • the invention has for its object to provide a component described above with decoupled in terms of the control signal coupling capacitances, which has improved switching parameters.
  • the invention proceeds from a component for impedance change in a coplanar waveguide comprising two ground lines and a signal line lying between the ground lines and a conductive connecting element, which leads to the two ground lines and the Signal line has a cover surface and is insulated, so that in each case a capacitor is formed.
  • the essence of the invention lies in the fact that the connecting element and the lines are arranged or configured such that the respective capacitor between the ground lines and the connecting element has a fixed capacitance, but the capacitor between the connecting element and signal line has a variable capacitance. This approach is based on the finding that it is very difficult in the embodiment last mentioned above, the switchable bridge outside, ie in Fig.
  • the coupling capacitance to the signal line is unchangeable with the same advantages, but the coupling capacitances to the respective ground lines are variable.
  • the coupling capacitances are in series with an inductance and form a resonant circuit whose resonant frequency can reflect two operating points due to the variable capacitance or capacitance, for example transmission and reflection of a signal with a predetermined frequency.
  • the resonant circuit is thus sufficient if a coupling capacitance is switchable.
  • the connecting element is mechanically deformable, preferably elastically, such that a distance between the connecting element and the line, which forms the variable capacitance together with the connecting element, in the region of the covering surface, e.g. about electrostatic forces, is changeable.
  • the signal line or the ground lines in a partial area in which it covers or cover the connecting element is mechanically deformable or at a distance such that the distance in the area of the respective covering area can be adjusted.
  • the ground lines are not connected by a bridge, but it is e.g. provided in the signal line, a bridge under which the connecting element runs, wherein the connecting element is capacitively coupled by overlapping surfaces with the ground lines and at least one interposed therebetween insulation layer to the ground lines.
  • the connecting element is preferably acted upon by a voltage.
  • electrostatic forces can be used, for example, on the capacitor between the connecting element and the signal line in order to switch its capacity, for example, between two values.
  • an insulating layer is first produced on the substrate prior to the structure of the structure. This can be done for example by thermal oxidation or the application of a PECVD layer (PECVD stands for plasma enhanced chemical vapor deposition). Thermal oxide is advantageous in terms of low attenuation of a high frequency signal.
  • the insulation layer deposited on the connecting element is structured. In this way, not only a connection for the connection of the connecting element can be exposed, but possibly also areas on connection bars, which are used for a subsequent electroplating for electrical connection of sections on which structures are to be "galvanized".
  • the ground lines and at least part of the signal lines are preferably generated via a galvanic step.
  • a starting layer is deposited.
  • This starting layer is conveniently structured via a lift-off process. This prevents damage to the dielectric already applied to the connecting element.
  • each exposed region of the sacrificial layer if there is additionally a start layer in this region, can be galvanically reinforced.
  • the galvanic layer is allowed to grow to such an extent that it overlaps over the sacrificial layer and, as it were, creates a mushroom structure.
  • a further metallization is now laid over the sacrificial layer with galvanic reinforcements and structured.
  • the bridge of the signal line is provided in the first place, wherein the remaining areas are preferably formed in plan view according to the contour of the signal line and the ground lines.
  • the sacrificial layer is then preferably anisotropically removed to the area under the bridge.
  • the sacrificial layer is also removed under the bridge metallization, thus providing a device consisting essentially of a coplanar waveguide in which the ground lines are each capacitively coupled across a continuous connector and the signal line is connected via a flexible bridge, i. a switchable bridge is also capacitively coupled to the connection element.
  • a switchable bridge is also capacitively coupled to the connection element.
  • a high-frequency switch 1 which comprises a piece of a coplanar waveguide 2.
  • the waveguide 2 has two ground lines 3, 4 and a signal line 5.
  • the signal line 5 is embodied in a region above a connection element 6 in the form of a bridge 7 (see in particular sectional view according to FIG Fig. 1b ).
  • the high-frequency switch 1 is constructed on a substrate 8, on which an insulating layer 9 was first deposited. This is followed by the connecting element 6 with a connection pad 10. Except for a contact point to the connection pad 10, the connecting element 6 is covered by a further insulating layer 11.
  • connection pad 10 If a voltage is now applied to the connecting element 6 via the connection pad 10, electrostatic forces acting on the bridge 7, which is DC-connected to ground potential, pull the bridge 7 as far as the connecting element 6 until the bridge 7 on the insulating layer 11 in the area above the connecting element 6 rests.
  • the associated electrical equivalent circuit diagram is based on Fig. 3 explained.
  • the second coupling capacity is provided with the reference numeral 15.
  • the second coupling capacity 15 is fixed in its capacity.
  • Fig. 1a and 1b This corresponds to the sectional area of the connecting element 6 with the ground lines 3, 4.
  • the inductance 116 and the ohmic resistance 115 stand for the region of the connecting element between the signal line 5 and the respective ground line 3, 4.
  • the variable coupling capacity is defined by the sectional area of the bridge determined with the connecting element 6. It can be controlled by the pad 10 in Fig. 1a and 1b eg set two values, a maximum value and a minimum value of the capacity.
  • the voltage source 119 is responsible for the electrostatic activation of the bridge 7.
  • the corresponding equivalent circuit as in Fig. 3 also results for a high-frequency switch according to Fig. 2a and 2b .
  • the high-frequency switch according to Fig. 2a and 2b differs from the high frequency switch, however Fig. 1a and 1b essentially by the fact that instead of a longitudinal bridge along the signal line 5 in Fig. 2 a transverse bridge 21 between the ground lines 3, 4 is realized.
  • the high-frequency switch 20 has the following structure: On the substrate 8 with insulating layer 9 is not arranged first a connecting element, but the line structures of the coplanar waveguide 22 with the ground lines 3, 4 and the signal line 5. In the region of the bridge 21st is on the lines 3, 4, 5 each have an insulating layer 23, 24, 25 are provided. This is followed by a post member 26 respectively the outer ground line 3, 4.
  • the post elements 26 have seen in section three layers. First, a starting layer 27, followed by a galvanically grown layer 28 and covered with a cover layer 29, which electrically corresponds to the connecting element 6, and from which the bridge 21 is formed. With a drive voltage, the post structure 26 can be acted upon with bridge 21 via a connection pad 30.
  • the coupling capacitance 15 (formed from the respective coupling capacitances of the connecting element 6 and the post elements 26) in series with the actual switching capacitance 115, the inductance 117 and the ohmic resistance 116 and thus form a resonant circuit. If one chooses the coupling capacitance 15 large, compared with the switching capacitance 115 in the driven, ie down state of the respective bridge 7, 21, the switch behaves with respect to a resonant frequency of the resonant circuit as a corresponding switch without integrated drive DC decoupling.
  • the coupling capacitance 15 is reduced, an additional degree of freedom is obtained in order to shift the resonant frequency of the resonant circuit to higher frequencies. Furthermore, this makes it possible to reduce the effective capacitance for the high frequency and thus in particular the insertion loss in the non-driven state, without this being accompanied by an increase in the switching voltage.
  • the attractive force for the bridge results from the derivation of the energy stored in the capacitance, whereby the constant coupling capacitances 15 play no role in this regard.
  • the starting point is a high-resistance p-doped silicon substrate 8 having a thickness of 300 ⁇ m.
  • the substrate 8 is thermally oxidized to produce an insulation layer 9.
  • a PECVD layer has so far a higher attenuation.
  • a layer of molybdenum-tantalum (MoTa) is applied in a thickness of preferably 100 to 400 nm in a sputtering process.
  • MoTa molybdenum-tantalum
  • Other metallizations are possible, but preferably a refractory metal such as molybdenum tantalum should be used.
  • molybdenum-tantalum is relatively non-noble and can be wet-chemically etched at the end of the process sequence with respect to all other metals used. This is particularly important for connection bars 40 for performing the electroplating.
  • the applied layer is patterned to produce therefrom the connecting element 6. This consists in the region of the later ground lines 3, 4 from a surface 41 of a predetermined size to define the fixed coupling capacitance 15, narrow connecting webs 42 to a central electrode surface 42, with which the coupling is fixed to the subsequent signal line.
  • an insulating layer eg PECVD SiOx, for example, deposited at 300 °.
  • PECVD SiOx silicon oxynitrite (SiON), silicon nitrite (Si 3 N 4 ) or another insulator.
  • the insulating layer is also structured, in particular in the region of the connection bars and at a connection point 43 for a later connection pad 10 for applying a control voltage to the high-frequency component (see FIG. Fig. 4d ).
  • a starting metallization layer 12 preferably sputtered, eg in a thickness of 300 nm (metals being titanium-tungsten, gold or chromium-copper, for example) and in the form of the intended waveguide structure with respect to the ground line and the signal line, preferably a lift-off process, structured. Due to the lift-off process, the previously applied insulation layer 11 is not affected. With regard to the structure of the signal line, it should be noted that this is interrupted in the region of the electrode 43 (here, the connection is made later by the bridge 7 arranged above it).
  • the supply line 44 is generated to the connection pad 10 with the start metallization.
  • a sacrificial layer 45 for example, photoresist in a thickness of 3.5 to 4 microns ( Fig. 4f ).
  • the layer 13 is generated in a galvanic process.
  • a material for the electroplating process for example, copper is suitable. This process step is over Fig. 4g seen.
  • the cover layer 14 is produced together with the bridge 7.
  • the bridge 7 For this example, aluminum or aluminum-silicon-copper is applied in a thickness of 300 to 800 nm and structured according to the structures of the ground lines 3, 4 and the signal line 5. That is, the bridge 7 is continued in the galvanized area of the signal line 5 as a cover layer on.
  • Fig. 4i illustrates that now the sacrificial layer 45 is removed in an anisotropic etching step, for example by RIE O 2 plasma etching, to the area below the bridge 7.
  • Fig. 4k already shows the process stage, after selectively to all other metals, for example in hydrogen peroxide (H 2 O 2 ), the molybdenum tantalum of the connecting bars 40 has been removed.
  • the still existing sacrificial layer 45 under the bridge 7 prevents the bridge 7 from being affected during this process step.
  • the sacrificial layer 45 is also removed under the bridge 7, whereby a structure according to Fig. 4l remains that of the structure according to the Fig. 1a and 1b equivalent.
  • the removal of the sacrificial layer under the bridge 7 requires an isotropic etching step, which can be carried out, for example, in a plasma barrel etcher in the O 2 plasma.

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Microwave Amplifiers (AREA)

Claims (2)

  1. Composant (1, 20) de modification de l'impédance dans un guide d'ondes (2, 22) coplanaire comprenant deux lignes de masse (3, 4) et une ligne de signal (5) qui se trouve entre les lignes de masse (3, 4) ainsi qu'un élément de liaison (6, 21, 29) conducteur qui présente une surface de recouvrement pour les deux lignes de masse (3, 4) et la ligne de signal (5) et qui est électriquement isolé, de manière à former à chaque fois un condensateur, l'élément de liaison (6, 21, 29) et les lignes (3, 4, 5) étant disposés ou configurés de telle sorte que le condensateur correspondant entre la ligne de masse (3, 4) et l'élément de liaison (6, 21, 29) possède une capacité variable, alors que le condensateur entre l'élément de liaison (6, 21, 29) et la ligne de signal (5) possède une capacité invariable, caractérisé en ce que les lignes de masse (3, 4) peuvent être déformées mécaniquement dans une zone partielle (7), dans laquelle elles recouvrent l'élément de liaison (6) avec un certain espacement, de telle sorte qu'il est possible de régler l'écart dans la zone de la surface de recouvrement.
  2. Composant selon la revendication 1, caractérisé en ce que l'élément de liaison (6, 21, 29) peut être soumis à une tension.
EP04762505A 2003-09-17 2004-07-24 Composant pour la modification de l'impedance dans un guide d'ondes coplanaire, et procede de production d'un tel composant Expired - Lifetime EP1665315B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10342938A DE10342938A1 (de) 2003-09-17 2003-09-17 Bauteil zu Impedanzänderung bei einem koplanaren Wellenleiter sowie Verfahren zu Herstellung eines Bauelements
PCT/DE2004/001658 WO2005036580A1 (fr) 2003-09-17 2004-07-24 Composant pour la modification de l'impedance dans un guide d'ondes coplanaire, et procede de production d'un tel composant

Publications (2)

Publication Number Publication Date
EP1665315A1 EP1665315A1 (fr) 2006-06-07
EP1665315B1 true EP1665315B1 (fr) 2011-10-12

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EP04762505A Expired - Lifetime EP1665315B1 (fr) 2003-09-17 2004-07-24 Composant pour la modification de l'impedance dans un guide d'ondes coplanaire, et procede de production d'un tel composant

Country Status (5)

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US (1) US7535325B2 (fr)
EP (1) EP1665315B1 (fr)
AT (1) ATE528775T1 (fr)
DE (1) DE10342938A1 (fr)
WO (1) WO2005036580A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8043950B2 (en) 2005-10-26 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7851709B2 (en) * 2006-03-22 2010-12-14 Advanced Semiconductor Engineering, Inc. Multi-layer circuit board having ground shielding walls
FR2901781B1 (fr) * 2006-05-31 2008-07-04 Thales Sa Structure de micro-commutateurs radiofrequence ou hyperfrequence et procede de fabrication d'une telle structure
WO2008115555A1 (fr) * 2007-03-21 2008-09-25 Massachusetts Institute Of Technology Appareil et méthode de mesure de mouvements représentatifs individuels dans un contexte médical

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10037385A1 (de) * 2000-08-01 2002-02-14 Bosch Gmbh Robert Vorrichtung mit einem Kondensator

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10037785C1 (de) 2000-08-03 2001-07-05 Agfa Gevaert Ag Vorrichtung und Verfahren zum digitalen Erfassen einer Vorlage
DE10100296A1 (de) * 2001-01-04 2002-07-11 Bosch Gmbh Robert Vorrichtung mit einem Kondensator mit veränderbarer Kapazität, insbesondere Hochfrequenz-Mikroschalter
JP3818176B2 (ja) * 2002-03-06 2006-09-06 株式会社村田製作所 Ｒｆｍｅｍｓ素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10037385A1 (de) * 2000-08-01 2002-02-14 Bosch Gmbh Robert Vorrichtung mit einem Kondensator

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
YOSHIDA Y. ET AL: "A novel grounded coplanar waveguide with cavity structure", PROCEEDINGS OF THE IEEE 16TH. ANNUAL INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS. MEMS 2003. KYOTO, JAPAN, AN. 19 - 23, 2003, 19 January 2003 (2003-01-19), KYOTO, JAPAN, pages 140 - 143, XP010636929 *

Also Published As

Publication number Publication date
EP1665315A1 (fr) 2006-06-07
DE10342938A1 (de) 2005-04-21
ATE528775T1 (de) 2011-10-15
US7535325B2 (en) 2009-05-19
WO2005036580A1 (fr) 2005-04-21
US20070229198A1 (en) 2007-10-04

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