EP1431031B1 - Procédé permettant de modifier les caracteristiques de mouillage d'une forme d'impression - Google Patents
Procédé permettant de modifier les caracteristiques de mouillage d'une forme d'impression Download PDFInfo
- Publication number
- EP1431031B1 EP1431031B1 EP03027825A EP03027825A EP1431031B1 EP 1431031 B1 EP1431031 B1 EP 1431031B1 EP 03027825 A EP03027825 A EP 03027825A EP 03027825 A EP03027825 A EP 03027825A EP 1431031 B1 EP1431031 B1 EP 1431031B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- groups
- silicon
- hydrophobic
- reaction
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007639 printing Methods 0.000 title claims abstract description 62
- 238000009736 wetting Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 239000000126 substance Substances 0.000 claims abstract description 27
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims abstract description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 28
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 125000003118 aryl group Chemical group 0.000 claims description 16
- 229910018540 Si C Inorganic materials 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- OKJPEAGHQZHRQV-UHFFFAOYSA-N iodoform Chemical compound IC(I)I OKJPEAGHQZHRQV-UHFFFAOYSA-N 0.000 claims description 10
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 8
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 7
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical group C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 6
- 150000003333 secondary alcohols Chemical class 0.000 claims description 5
- MUPYMRJBEZFVMT-UHFFFAOYSA-N 1-chloro-4-dimethoxyphosphorylsulfanylbenzene Chemical compound COP(=O)(OC)SC1=CC=C(Cl)C=C1 MUPYMRJBEZFVMT-UHFFFAOYSA-N 0.000 claims description 4
- 150000001298 alcohols Chemical class 0.000 claims description 4
- 150000001336 alkenes Chemical class 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 4
- XSGHLZBESSREDT-UHFFFAOYSA-N methylenecyclopropane Chemical compound C=C1CC1 XSGHLZBESSREDT-UHFFFAOYSA-N 0.000 claims description 3
- 150000003138 primary alcohols Chemical class 0.000 claims description 3
- 125000005372 silanol group Chemical group 0.000 claims description 2
- 150000001299 aldehydes Chemical class 0.000 claims 1
- 150000001337 aliphatic alkines Chemical class 0.000 claims 1
- 239000011224 oxide ceramic Substances 0.000 claims 1
- 229910052574 oxide ceramic Inorganic materials 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 12
- 125000004432 carbon atom Chemical group C* 0.000 description 10
- 238000003384 imaging method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000005661 hydrophobic surface Effects 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- -1 trimethylene methane derivatives Chemical class 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910002808 Si–O–Si Inorganic materials 0.000 description 3
- RHQDFWAXVIIEBN-UHFFFAOYSA-N Trifluoroethanol Chemical compound OCC(F)(F)F RHQDFWAXVIIEBN-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000001345 alkine derivatives Chemical class 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000007645 offset printing Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 125000004216 fluoromethyl group Chemical group [H]C([H])(F)* 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000001282 organosilanes Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000012713 reactive precursor Substances 0.000 description 2
- 239000002094 self assembled monolayer Substances 0.000 description 2
- 239000013545 self-assembled monolayer Substances 0.000 description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical group [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020175 SiOH Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 238000005804 alkylation reaction Methods 0.000 description 1
- 150000005840 aryl radicals Chemical class 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 125000004965 chloroalkyl group Chemical group 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical group C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 230000002186 photoactivation Effects 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C1/00—Forme preparation
- B41C1/10—Forme preparation for lithographic printing; Master sheets for transferring a lithographic image to the forme
- B41C1/1041—Forme preparation for lithographic printing; Master sheets for transferring a lithographic image to the forme by modification of the lithographic properties without removal or addition of material, e.g. by the mere generation of a lithographic pattern
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41N—PRINTING PLATES OR FOILS; MATERIALS FOR SURFACES USED IN PRINTING MACHINES FOR PRINTING, INKING, DAMPING, OR THE LIKE; PREPARING SUCH SURFACES FOR USE AND CONSERVING THEM
- B41N1/00—Printing plates or foils; Materials therefor
- B41N1/006—Printing plates or foils; Materials therefor made entirely of inorganic materials other than natural stone or metals, e.g. ceramics, carbide materials, ferroelectric materials
Definitions
- the invention relates to a method for changing the wetting properties of a printing plate having a surface comprising inorganically bound silicon, wherein the surface is brought into a first chemical state with first wetting property and a subset of all areas of the surface in a second chemical state with second wetting property Changing the chemical end groups of the surface is brought.
- a printing form coated with an amorphous semiconductor is known.
- the disordered amorphous state of the semiconductor can be changed by means of a laser beam into a higher ordered crystalline state.
- the semiconductor surface is rougher, so that rearrangement of the semiconductor surface causes liquids to adhere better in the region of the rougher surface than in the amorphous smooth regions.
- a printing plate produced according to this method is limited by the minimum size of the crystalline regions.
- a printing forme in hydrophilic and hydrophobic areas by means of a hydrophobic organic reagent and heat energy can be structured by fixing an organic compound by reaction on the surface.
- the surface of the printing form may contain silicates, a silicone resin or organosilanes in a coating layer, and the compound may be an organosilane derivative.
- a silicone resin can be used as a binder in a layer which accommodates a photocatalyst, so that the printing plate can be patterned into hydrophilic and hydrophobic areas by exposure in a pattern.
- a printing plate having a surface comprising silicon can be brought into a first chemical state with a first wetting property and into a second chemical state with a second wetting property.
- the local wetting property ie the local hydrophilic or hydrophobic wetting property of the printing form, can be controlled by changing the chemical end groups of the surface with correspondingly different electronic properties.
- a surface having a first chemical structure is generated, which one preferably in the has substantial uniform hydrophilic or hydrophobic wetting property. This surface is then converted in locally limited areas by a localized change in the chemical structure (end groups) in the other state of the wetting property, ie from hydrophilic to hydrophobic or hydrophobic to hydrophilic.
- Silicon is chosen as the semiconductor.
- the surface is first rendered into a hydrophobic state, with SiH, SiH 2 and / or SiH 3 groups being present on the surface, for example.
- the hydrophobic end group is then locally replaced by a hydrophilic end group or converted into a hydrophobic end group, so that, for example, SiOH, SiOSi and / or SiO end groups replace the hydrophobic end groups.
- the object of the present invention is to specify a method for locally and repeatedly changing its wetting properties.
- the inventive method can be carried out with particular advantage with a printing plate whose surface consists of amorphous, nanocrystalline, polycrystalline or crystalline silicon or is a stoichiometric or non-stoichiometric silicon ceramic, which has oxygen and / or nitrogen.
- unsubstituted and / or halogenated for example partially and / or completely chlorinated and / or partially fluorinated and / or fully fluorinated end groups, especially arylene end groups or alkyl end groups, can be attached as organic end groups in hydrophobic areas of the printing form.
- the organic end groups in the hydrophobic regions may be CH 3 end groups and / or CF 3 end groups.
- the chain molecules may have CH 3 end groups and / or CF 3 end groups.
- the method according to the invention for changing the wetting properties of a printing form serves to create a structure of hydrophilic and hydrophobic regions on the printing form, so that in an offset printing process duplications the structure can be generated.
- the second chemical state may be performed by localized processing with a controlled light source such that the second chemical state is generated to correspond to image information to be printed or its negative (image information not to be printed).
- a direct attachment of alkyl groups or fluoroalkyl groups to the surface of the printing plate via Si-C bonds can be effected by photoinitiation of halosilanes, for example Cl-Si (CH 3 ) 3 , alcohols, alkenes and / or alkynes.
- halosilanes for example Cl-Si (CH 3 ) 3
- alcohols for example alcohols, alkenes and / or alkynes.
- reactive halogen-containing molecules such as iodoform is possible.
- Alkoxyl monolayers in other words alkyl groups which are fixed via surface Si-O-C bonds, can react via reactions of alcohols (R-OH), preferably with four or five carbon atoms in a chain, since these substances are less hazardous to humans and the environment , or aldehydes (R-CHO) having a hydrogen-terminated, halo-terminated or oxide-terminated surface comprising silicon.
- R is an unsubstituted alkyl group or aryl group or a partially or completely fluorinated alkyl group or aryl group.
- the hydrocarbon group can be chain-like or ring-shaped, in particular aromatic, for example a phenyl ring (C 6 H 5 -) or a substituted phenyl ring.
- the reaction can be initiated and / or accelerated.
- the chain or ring aromatic unsubstituted or fluorinated carbon end groups may have a different number of carbon atoms, preferably from 1 to 6 carbon atoms.
- alkyl groups may alternatively be via Si-O-Si-C bonds by siloxane chemistry with alkylchlorosilanes, alkylalkoxysilanes, and / or alkylaminosilanes on an oxide-covered surface comprising silicon.
- the unsubstituted or fluorinated alkyl group may have a chain of several carbon atoms, preferably 1 to 6 carbon atoms, having one CH 3 or one CF 3 end group or more CH 3 or CF 3 end groups.
- the organic end groups each have a chain of several carbon atoms at which CH 3 or CF 3 groups are located.
- the hydrophobic behavior is only slightly influenced by the length of the carbon chain.
- long chains up to 20 carbon atoms
- additional stabilization can advantageously be achieved by lateral van der Waals interactions take place, it can form a self-assembling monolayer (self assembled monolayer, SAM).
- SAM self assembled monolayer
- a short carbon chain and an arrangement in which not every surface atom possesses an organic end group is sufficient for the printing process.
- the arrangement may have a relatively low surface density of the organic end groups. Typical concentrations are between 10 14 and 10 11 end groups per cm 2 .
- a higher reaction rate in the binding of methyl- and / or methylene-containing and / or fluorine-containing hydrophobic organic end groups on the surface of a printing plate can be achieved in a reaction with much more reactive, especially radical, starting molecules.
- an organic end group may be attached by reaction with iodoform and / or with trimethylene methane derivatives, which may occur in a triplet and / or a singlet dipolar state.
- DMCP 1,1-dialkoxy-2-methylenecyclopropane
- From methylenecyclopropane derivatives can be generated thermally or by irradiation dipolar trimethylene derivatives.
- the first example relates to a bond of a hydrophobic layer with alkyl end groups or fluoroalkyl end groups by means of Si-C bonds.
- the Si-C bonds have a relatively high stability.
- Reactive hydrocarbons such as alkenes and / or alkynes
- Si-C bonds ⁇ Si-R
- R end groups are formed or attached, where R is an aryl or alkyl group.
- the starting point for such a connection can be particularly advantageously a hydrogen-terminated silicon surface.
- a method of obtaining such a hydrogen-terminated silicon surface is disclosed in the document WO 00/21753 described.
- the problem of the relatively slow course of the reaction in which under normal conditions a partial oxidation of the silicon surface can simultaneously be used, can be counteracted by using pure chemicals and reactive precursor molecules, for example radicals. The use of such reactive precursor molecules results in a considerable acceleration of the alkylation process.
- the surface can be spatially selectively, ie in some areas, oxidized and thus hydrophilized for imaging with laser radiation.
- deletion of the image can be accomplished by oxidizing and / or rehydrogenating the entire surface so that the initial state is recovered.
- a method for imaging with hydrophilic domains that is, for changing the wetting property of hydrophobic in the wetting property hydrophilic, with a laser in the infrared, visible or ultraviolet spectral region in the atmosphere are aryl or alkyl end groups, especially methyl or fluoromethyl end groups
- radiation power and wavelength with increasing number of carbon atoms in the organic end group may not always be complete, but only partially oxidized and removed.
- the remaining methylene, methyl or fluoromethyl end groups are oxidized in this case to aldehyde or carboxyl groups and thus also hydrophilic.
- a circuit from hydrophobic to hydrophilic also possible by the organic end group, such as CH 3 , the organic chain is converted without removing the organic chain completely.
- alkyl groups In the case of a surface made of a silicon nitride ceramic silylamine groups may additionally arise. For easy removal it is therefore appropriate to choose the alkyl groups as short as possible. Preferred are chain lengths of 1 to 5 carbon atoms. For a new imaging, the alkyl groups are completely removed. A distance can be achieved photochemically with UV or VUV light sources, in particular lasers, or photothermally with infrared or visible light sources, in particular lasers.
- a second example relates to the attachment of a hydrophobic layer having aryl or alkyl end groups or fluoroalkyl end groups by means of Si-O-C bonds.
- aryl radical or alkyl radical is attached or fluoroalkyl radical to the surface via an oxygen bridge to the carbon (Si-OR). This results in a hydrophobic surface with aryl or alkyl end groups or fluorinated alkyl end groups, which can be imaged as described in the first example with hydrophilic areas.
- Secondary alcohols having 3 or 4 carbon atoms are preferred.
- the secondary alcohols may, under certain conditions, form O-bonds between two organic end groups, thereby imparting additional stability to the modified surface. According to the processes described in the first example, the initial termination can be restored.
- the third example relates to a connection of a hydrophobic layer with aryl or alkyl end groups or fluoroalkyl end groups by means of Si-O-Si-C bonds.
- the starting point is an oxidized hydrophilic silicon, silicon oxide or silicon nitride surface which is at least partially covered with silanol and / or silylamine groups.
- molecules with hydrophobic alkyl end groups or fluorinated alkyl end groups are chemisorbed (Si-O-Si-R).
- This hydrophobic surface can be prepared with alkyltrimethoxysilanes, for example CH 3 - (CH 2 ) 2 -Si- (OCH 3 ) 3 , or fluoroalkylmethoxysilanes, for example CF 3 - (CH 2 ) 2 -Si- (OCH 3 ) 3 .
- the silicon atoms of the Si-O-Si anchor group can additionally be crosslinked to one another via oxygen bridges.
- halogen atoms or NR 2 , OH or OR groups of mono-, di- or trifunctional alkyldimethylsilanes react, for example to form alkyldimethylsilyl groups (Si-O-Si (CH 3 ) 2 -R, in particular Si-O- Si (CH 3 ) 3 ).
- the surface density of the anchor or the terminating organic end group molecules does not have to correspond to the density of the silicon surface atoms, but may be lower.
- a higher reaction rate for the hydrophobing of the surface can be achieved with unsaturated compounds, such as trimethylenemethane derivatives.
- Imaging of the hydrophobic printing form into hydrophilic subregions or domains can be achieved by means of a laser, as already described in the first example.
- the hydrophilic starting state is restored by a light-induced, in particular laser-induced oxidation of the entire surface.
- FIG. 1 schematically the method of the invention is shown.
- a printing form 10 is plate-shaped and can be received by a printing form cylinder, in particular in a printing press.
- the printing form 10 has a surface 12 which has inorganically bound silicon.
- This printing form 10 is usually covered in the initial state, in particular after its manufacturing process with a native, a few nanometers thick oxide layer.
- the printing form 10 is provided with a defined substantially hydrophobic surface.
- the surface 12 of the printing plate 10 is terminated for this purpose with organic end groups or fluorinated organic end groups.
- the free valences of the silicon surface atoms with the corresponding end groups, in particular aryl end groups, alkyl end groups or fluoroalkyl end groups, are saturated.
- the hydrophobic region 14 of the printing form 10 is then hydrophilized in subsections in a further method step.
- This can be done, for example, with one of the abovementioned chemical reactions, in particular according to Examples 1 to 3.
- two methods have been found to be particularly suitable.
- energy can be supplied locally by means of a laser 16, so that the chemical conversion process is triggered.
- lasers in continuous wave mode or pulsed
- a fluorine laser produces VUV light at a wavelength of about 157 nm.
- Short wavelength light in this spectral range may alternatively be generated by nonlinear optical processes from longer wavelength light.
- a photochemical surface modification can be achieved.
- a photothermal modification as mentioned above, a plurality of wavelengths of light in question, for example, gas laser (excimer laser) or solid-state laser (for example, frequency-multiplied Nd laser) or diode laser can be used.
- the laser 16 is driven.
- Means for generating a relative movement between the laser 16 and the printing forme 10 are provided such that the light beam 20 emitted by the laser 16 can be scanned or reached at least once over all points of the surface of the printing form 10 which constitute the printing surface.
- the printing form 10 may be applied or received on a printing form cylinder in a printing press, so that the rotation of the cylinder about its axis of symmetry and a translation of the laser 16 substantially parallel to the axis of symmetry of the cylinder, the light beam 20 can sweep the entire surface of the printing plate 10 ,
- the light beam 20 or the laser 16 is switched on and off or faded in and out as it passes over the printing form so that a pattern 22 to be printed or the negative of the pattern is introduced as a hydrophilic image in the hydrophobic surface can.
- this change in molecular properties on the surface of the printing plate 10 is not visible to the naked eye, since it is a microscopic modification of the surface.
- the applied pattern 22 to be printed corresponds to an original image 21, which can be produced in different ways.
- an original image 21 can be generated with a digitizing method or directly, for example with the aid of a graphics program or a digital camera.
- the original images 21 are processed and stored in a so-called RIP (raster imaging processor).
- the memory may be inside or outside the control unit 18. Based on those identified in the RIP and stored data is then the light beam 20 is controlled so that the pattern to be printed 22 is applied to the printing plate 10.
- all the other points of the hydrophobic surface 14 can be locally supplied with energy by means of the laser 16, so that finally the whole Surface of the printing form 14 hydrophilized and thus modified, in particular uniformly hydrophilized or unstructured, is.
- energy can be supplied over a wide area, for example with a lamp, for example a UV lamp, in particular commercially available excimer lamps with different UV wavelengths.
- the starting point is a surface 12 with inorganically bonded silicon, which comprises silicon (di) oxide (partial image I).
- silicon (di) oxide it should be pointed out that with ultrathin oxide layers, below 1 nanometer, suboxides SiO x , with x ⁇ 2, exist and only with thicker oxide layers silicon dioxide (SiO 2 ) is present.
- the surface has an oxidized surface layer 26 at the surface line, the thickness of which is typically in the nanometer range.
- OH groups hydroxyl groups
- the surface 12 is hydrophilic. Such a surface 12 can be obtained in different ways.
- the surface 12 is obtainable by forming a native oxide layer (spontaneous surface oxidation) of an amorphous silicon layer deposited on a substrate. From a liquid phase or gas phase, a silicon (di) oxide film can be deposited on a carrier material. It is also possible to use silica as glass.
- the carrier material or the glass can be shaped as a plate, cylinder or sleeve, in particular for use in a printing machine. The steps described below can be carried out in particular in the printing press, when the printing form is recorded in a printing unit.
- the surface 12 is cleaned prior to hydrophobic termination. This is preferably done by large-area irradiation with the VUV light of a lamp below 200 nm wavelength, preferably 172 nm wavelength.
- the process is self-limiting; at room temperature, the surface is coated with a few monolayer thick oxide skin.
- cleaning may be performed by treatment with ozone (O 3 ) or other oxidizing agent such as concentrated nitric acid (HNO 3 ), hydrogen peroxide solution (H 2 O 2 ) or the like. Further alternatively, plasma treatment is effective.
- An oxidative purification can typically be completed in about 10 minutes.
- the surface preferably the entire surface, becomes hydrophobic, ie water-repellent.
- the termination is carried out with trimethylsilyl derivatives, for example hexamethyldisiloxane, chlorotrimethylsilane, hexamethyldisilazane, ethoxytrimethylsilane or dimethylaminotrimethylsilane.
- Such a termination reaction can proceed according to a general reaction scheme as follows: Si - O - H + Y - Si ⁇ C ⁇ H 3 3 ⁇ Si - O - Si ⁇ C ⁇ H 3 3 + HY .
- Y is a suitable leaving group.
- Y may be an OH group, a halogen atom, an NH 2 group or the like.
- the non-methyl-bearing Si atom is located in or on the surface 12th
- Particularly preferred is a mixture of 1.0 to 1.6 g of hexamethyldisiloxane, 4.5 to 8.0 g of trifluoroethanol and 0.8 to 1.5 g of 90% sulfuric acid, in particular 1.3 g of hexamethyldisiloxane, 6.0 g Trifluoroethanol and 1.2 g of 90% sulfuric acid.
- the trifluoroethanol concentration should be minimized.
- the mixing ratio it should be noted that at too high a concentration of hexamethyldisiloxane and too little of the other components, phase separation occurs. Too much sulfuric acid can cause unwanted side reactions.
- the liquid mixture is placed on the cleaned oxidized silicon surface for termination.
- the mixture can be painted on the surface with a plastic scraper.
- the surface may be slowly bathed in the preparation mixture, passed through a bath filled with the preparation mixture. The reaction time is about 10 seconds. From the terminated surface, the preparation solution flows independently or collects to small droplets, which are rinsed with water or can be sucked by the wick principle of the surface.
- hexamethyldisilazane can also be used with particular advantage.
- This substance can be applied directly, ie without any further component. It can be well supplied as a vapor of the surface, however, a suction device is advantageous because it ammonia gas (NH 3 ) is released. Since hexamethyldisilazane has a high vapor pressure, subsequent rinsing of the surface is not necessary. The reaction time is also about 10 seconds.
- a surface 12 comprising inorganic bound silicon and an oxidized surface layer 26 (silicon (di) oxide) on which hydroxyl groups have been replaced by trimethysiloxy groups to the extent that the surface as a whole has hydrophobic properties.
- oxidized surface layer 26 silicon (di) oxide
- trimethysiloxy groups to the extent that the surface as a whole has hydrophobic properties.
- the organic end groups 30 are shown roughly schematically in part II.
- the hydrophobic termination is locally removed by imaging or energy input, so that again a hydrophilic silicon (di) oxide surface is formed at the imaged areas (structuring step 34, part image III of the Fig. 2 ).
- imaging takes place by means of a laser, wherein IR, NIR, visible or UV radiation can be used.
- a material such as a metallic or ceramic layer having a high absorption coefficient may be used to absorb the radiation in a small volume with high efficiency.
- amorphous silicon can act as an absorption layer.
- the printing form can be printed in an offset printing process with conventional printing ink. After completion of printing residues of the ink can be removed with conventional detergents or solvents for printing. For a rough cleaning about 5 minutes are required.
- the structuring can be erased: during the erasing process, both organic impurities, such as residues of paint or solvent residues, and the hydrophobic termination of the surface are eliminated (extinguishing step 36 in FIG Fig. 2 ).
- the erase process thus serves to restore an unstructured hydrophilic surface.
- the field corresponds to the IV Fig. 2 the drawing I the Fig. 2 , if the organic end groups 30 have been removed over a large area and the surface 12 again carries OH groups at the valences 28.
- the Si-O portion of the organic end group may remain on the oxidized surface layer 26 of the surface 12, so that the surface line 24 is replaced by a new surface line 38.
- silicon (di) oxide can slowly grow on the surface 12, without changing the composition in principle or the wetting properties.
- the erasing can preferably take place by the action of energy by means of a laser, in other words a large-area imaging or a cleaning by means of UV light, as already described above, is carried out.
- a hydrophobic surface 14 of the printing form 10 can be converted by local photoinduced reaction processes into partial regions into an altered, second chemical state, in particular a hydrophilic state.
- the surface of the printing form 10 can also be placed over a large area in either the first chemical state or the second chemical state, so that a pattern to be printed 22 is removed again and a re-structuring can be made.
- the printing form 10 may also be referred to as a rewritable printing form or reusable printing form.
- the printing form according to the invention is in particular an offset printing plate.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Printing Plates And Materials Therefor (AREA)
- Materials For Photolithography (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
- Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
- Coloring (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Claims (4)
- Procédé permettant la modification des caractéristiques de mouillage d'une forme d'impression (10) avec une surface (12) qui présente un silicium amorphe, cristallin, céramique à base de nitrure ou d'oxyde, les atomes de silicium dans la surface (12) sont amenés dans un premier état chimique avec des premiers groupes terminaux qui comprennent des groupes de silanol et avec des caractéristiques de mouillage hydrophile et des atomes de silicium sont amenés dans une quantité partielle de la surface (12) dans un second état chimique différent du premier état avec des seconds groupes terminaux et d'une propriété de mouillage hydrophobe par modification des groupes terminaux chimiques de la surface (12), caractérisé en ce que- des groupes terminaux organiques sont liés aux atomes de silicium dans les zones hydrophobes de la surface (12) de sorte que les atomes de silicium sont substitués soit avec plus d'un groupe CH3 ou plus d'un groupe OCH3 ou sont substitués avec au moins un groupe terminal organique qui est différent du groupe CH3 ou du groupe OCH3, et en ce que la liaison s'effectue comme suit- des groupes aryles et/ou des groupes alkyles et/ou des groupes fluoralkyles et/ou des groupes chloralkyles sont liés par une liaison SI-C par photo-initiation à des silanes halogénés, des alcools, des alcènes ou des alkines; ou- des groupes terminaux organiques sont liés par réaction avec un iodoforme et/ou des dérivés de tri méthylène-méthane et/ou des dérivés de méthylène-cyclopropane et/ou des dérivés 1,1-dialkoxy-2-méthylène-cyclopropane (DMCP) et/ou des dérivés de triméthylsilyle; ou- des groupes aryle et/ou des groupés alkyle sont liés par une liaison Si-O-C par réaction d'alcools primaires et/ou d'alcools secondaires et/ou des aldéhydes; ou- des groupes alkyles sont liés par une liaison Si-O-C par réaction avec des alkyl-alkoxysilanes, alkyl-alkaminosilanes et/ou alkylchlorosilanes.
- Procédé permettant la modification des caractéristiques de mouillage d'une forme d'impression (10) selon la revendication 1, caractérisé en ce que le dérivé de triméthyl silyle est un hexaméthyldisiloxane ou un hexaméthyldisiloxane.
- Procédé permettant la modification des caractéristiques de mouillage d'une forme d'impression (10) selon la revendication 1, caractérisé en ce que la réaction est initiée et/ou accélérée par action de la lumière.
- Procédé permettant la modification des caractéristiques de mouillage d'une forme d'impression (10) selon la revendication 1, caractérisé en ce que des groupes alkyle sont liés par une liaison Si-O-Si-C par réaction avec des alkyltriméthoxysilanes et/ou des fluoralkyles méthoxysilanes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10260114 | 2002-12-19 | ||
| DE10260114 | 2002-12-19 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP1431031A2 EP1431031A2 (fr) | 2004-06-23 |
| EP1431031A3 EP1431031A3 (fr) | 2004-09-22 |
| EP1431031B1 true EP1431031B1 (fr) | 2010-11-03 |
Family
ID=32336520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP03027825A Expired - Lifetime EP1431031B1 (fr) | 2002-12-19 | 2003-12-04 | Procédé permettant de modifier les caracteristiques de mouillage d'une forme d'impression |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1431031B1 (fr) |
| JP (1) | JP2004195979A (fr) |
| CN (1) | CN1508010B (fr) |
| AT (1) | ATE486718T1 (fr) |
| DE (2) | DE50313232D1 (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006020083A (ja) | 2004-07-01 | 2006-01-19 | Omron Corp | タグ通信用アンテナ、タグ通信装置、タグ通信システム、タグ通信装置のスキャン調整方法、およびスキャン調整プログラム |
| EP1995060A1 (fr) * | 2007-05-22 | 2008-11-26 | Ernst-Rudolf Dr. Weidlich | Procédé destiné à influencer la capacité de maintien et/ou de dépose de la couleur de formes imprimées et dispositif d'impression |
| DE102012013302A1 (de) * | 2011-08-11 | 2013-02-14 | Heidelberger Druckmaschinen Ag | Druckform |
| JP6130147B2 (ja) * | 2013-01-11 | 2017-05-17 | 太陽誘電ケミカルテクノロジー株式会社 | 構造体及び構造体の製造方法 |
| TWI797640B (zh) * | 2020-06-18 | 2023-04-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 基於矽之自組裝單層組成物及使用該組成物之表面製備 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4718340A (en) * | 1982-08-09 | 1988-01-12 | Milliken Research Corporation | Printing method |
| US6321652B1 (en) * | 1997-02-06 | 2001-11-27 | Star Micronics Co., Ltd. | Image forming and plate making method and apparatus |
| DE69841944D1 (de) * | 1997-08-08 | 2010-11-25 | Dainippon Printing Co Ltd | Struktur zur Musterbildung, Verfahren zur Musterbildung und deren Anwendung |
| JP3384544B2 (ja) * | 1997-08-08 | 2003-03-10 | 大日本印刷株式会社 | パターン形成体およびパターン形成方法 |
| CZ296102B6 (cs) * | 1998-10-10 | 2006-01-11 | Heidelberger Druckmaschinen Ag | Zpusob zmeny smácivosti tiskarské formy a tiskarská forma |
| JP2000181071A (ja) * | 1998-12-15 | 2000-06-30 | Fuji Photo Film Co Ltd | 平版印刷版用原版 |
| JP3534697B2 (ja) * | 2000-11-29 | 2004-06-07 | 三菱重工業株式会社 | 印刷用版材の作製方法、再生方法及び印刷機 |
-
2003
- 2003-12-04 EP EP03027825A patent/EP1431031B1/fr not_active Expired - Lifetime
- 2003-12-04 DE DE50313232T patent/DE50313232D1/de not_active Expired - Lifetime
- 2003-12-04 DE DE10356600A patent/DE10356600A1/de not_active Withdrawn
- 2003-12-04 AT AT03027825T patent/ATE486718T1/de not_active IP Right Cessation
- 2003-12-15 CN CN200310120627.2A patent/CN1508010B/zh not_active Expired - Fee Related
- 2003-12-16 JP JP2003417824A patent/JP2004195979A/ja active Pending
Non-Patent Citations (2)
| Title |
|---|
| FADEEV A.Y.; MCCARTHY T.J.: "TRIALKYLSILANE MONOLAYERS COVALENTLY ATTACHED TO SILICON SURFACES: WETTABILITY STUDIES INDICATING THAT MOLECULAR TOPOGRAPHY CONTRIBUTES TO CONTACT ANGLE HYSTERESIS", LANGMUIR, vol. 15, no. 15, 30 April 1999 (1999-04-30), AMERICAN CHEMICAL SOCIETY, WASHINGTON, DC, US, pages 3759 - 3766, XP001053741 * |
| WASSERMAN S.R. ET AL: "STRUCTURE AND REACTIVITY OF ALKYLSILOXANE MONOLAYERS FORMED BY REACTION OF ALKYLTICHLOROSILANES ON SILICON SUBSTRATES", LANGMUIR, vol. 5, no. 4, 1 July 1989 (1989-07-01), AMERICAN CHEMICAL SOCIETY, WASHINGTON, DC, US, pages 1074 - 1087, XP001006225 * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE50313232D1 (de) | 2010-12-16 |
| DE10356600A1 (de) | 2004-07-01 |
| CN1508010B (zh) | 2010-04-28 |
| ATE486718T1 (de) | 2010-11-15 |
| EP1431031A3 (fr) | 2004-09-22 |
| EP1431031A2 (fr) | 2004-06-23 |
| JP2004195979A (ja) | 2004-07-15 |
| CN1508010A (zh) | 2004-06-30 |
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