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DE69630328D1 - Präziser kontrollierter Niederschlag von Sauerstoff in Silizium - Google Patents

Präziser kontrollierter Niederschlag von Sauerstoff in Silizium

Info

Publication number
DE69630328D1
DE69630328D1 DE69630328T DE69630328T DE69630328D1 DE 69630328 D1 DE69630328 D1 DE 69630328D1 DE 69630328 T DE69630328 T DE 69630328T DE 69630328 T DE69630328 T DE 69630328T DE 69630328 D1 DE69630328 D1 DE 69630328D1
Authority
DE
Germany
Prior art keywords
oxygen
silicon
controlled precipitation
precise controlled
precise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69630328T
Other languages
English (en)
Other versions
DE69630328T2 (de
Inventor
Robert Falster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE69630328D1 publication Critical patent/DE69630328D1/de
Publication of DE69630328T2 publication Critical patent/DE69630328T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H10P76/00—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H10P36/20—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69630328T 1995-03-14 1996-03-08 Präziser kontrollierter Niederschlag von Sauerstoff in Silizium Expired - Lifetime DE69630328T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/403,301 US5593494A (en) 1995-03-14 1995-03-14 Precision controlled precipitation of oxygen in silicon
US403301 1995-03-14

Publications (2)

Publication Number Publication Date
DE69630328D1 true DE69630328D1 (de) 2003-11-20
DE69630328T2 DE69630328T2 (de) 2004-05-06

Family

ID=23595295

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69630328T Expired - Lifetime DE69630328T2 (de) 1995-03-14 1996-03-08 Präziser kontrollierter Niederschlag von Sauerstoff in Silizium

Country Status (9)

Country Link
US (1) US5593494A (de)
EP (1) EP0732431B1 (de)
JP (1) JPH08253392A (de)
KR (1) KR960035771A (de)
CN (1) CN1061705C (de)
DE (1) DE69630328T2 (de)
MY (1) MY115003A (de)
SG (1) SG43246A1 (de)
TW (1) TW344850B (de)

Families Citing this family (47)

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US5788763A (en) * 1995-03-09 1998-08-04 Toshiba Ceramics Co., Ltd. Manufacturing method of a silicon wafer having a controlled BMD concentration
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
US5994761A (en) 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
DE69806369T2 (de) * 1997-04-09 2003-07-10 Memc Electronic Materials, Inc. Silicium mit niedriger fehlerdichte und idealem sauerstoffniederschlag
US6379642B1 (en) * 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
JP3544676B2 (ja) * 1997-04-09 2004-07-21 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 単結晶シリコンインゴットの製造方法
US5882989A (en) * 1997-09-22 1999-03-16 Memc Electronic Materials, Inc. Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers
EP1090166B1 (de) 1998-06-26 2002-03-27 MEMC Electronic Materials, Inc. Verfahren zur herstellung fehlerfreier siliziumkristalle von willkürlichem grossen durchmesser
US6828690B1 (en) * 1998-08-05 2004-12-07 Memc Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
EP1914796B1 (de) * 1998-09-02 2012-06-06 MEMC Electronic Materials, Inc. Verfahren zur Herstellung eines Czochralski-Siliziumwafers ohne Sauerstoffniederschlag
US6336968B1 (en) * 1998-09-02 2002-01-08 Memc Electronic Materials, Inc. Non-oxygen precipitating czochralski silicon wafers
WO2000013211A2 (en) 1998-09-02 2000-03-09 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
CN1155064C (zh) 1998-09-02 2004-06-23 Memc电子材料有限公司 制备理想析氧硅晶片的工艺
WO2000013209A2 (en) 1998-09-02 2000-03-09 Memc Electronic Materials, Inc. Thermally annealed silicon wafers having improved intrinsic gettering
EP1133590B1 (de) * 1998-10-14 2003-12-17 MEMC Electronic Materials, Inc. Im wesentlichen defektfreie epitaktische siliziumscheiben
DE69908965T2 (de) 1998-10-14 2004-05-13 Memc Electronic Materials, Inc. Wärmegetempertes einkristallines silizium mit niedriger fehlerdichte
JP2000154070A (ja) * 1998-11-16 2000-06-06 Suminoe Textile Co Ltd セラミックス三次元構造体及びその製造方法
US6284384B1 (en) * 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
US20030051656A1 (en) 1999-06-14 2003-03-20 Charles Chiun-Chieh Yang Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
US6635587B1 (en) 1999-09-23 2003-10-21 Memc Electronic Materials, Inc. Method for producing czochralski silicon free of agglomerated self-interstitial defects
US6339016B1 (en) 2000-06-30 2002-01-15 Memc Electronic Materials, Inc. Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
CN1441961A (zh) * 2000-06-30 2003-09-10 Memc电子材料有限公司 形成具有洁净区的硅片的方法和装置
US6599815B1 (en) 2000-06-30 2003-07-29 Memc Electronic Materials, Inc. Method and apparatus for forming a silicon wafer with a denuded zone
JP4439810B2 (ja) * 2001-01-26 2010-03-24 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 酸化誘起積層欠陥を実質的に有さない空孔優勢コアを有する低欠陥密度シリコン
US6897084B2 (en) * 2001-04-11 2005-05-24 Memc Electronic Materials, Inc. Control of oxygen precipitate formation in high resistivity CZ silicon
WO2002086960A1 (en) * 2001-04-20 2002-10-31 Memc Electronic Materials, Inc. Method for the preparation of a silicon wafer having stabilized oxygen precipitates
EP1983562A2 (de) * 2001-07-10 2008-10-22 Shin-Etsu Handotai Company Limited Herstellungsverfahren eines Silizium-Wafers
US6808781B2 (en) 2001-12-21 2004-10-26 Memc Electronic Materials, Inc. Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same
US7201800B2 (en) 2001-12-21 2007-04-10 Memc Electronic Materials, Inc. Process for making silicon wafers with stabilized oxygen precipitate nucleation centers
JP2005515633A (ja) * 2001-12-21 2005-05-26 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 窒素／炭素安定化された酸素析出核形成中心を有する理想的酸素析出を行ったシリコンウエハおよびその製造方法
KR20040007025A (ko) * 2002-07-16 2004-01-24 주식회사 하이닉스반도체 반도체 웨이퍼 제조 방법
US6955718B2 (en) * 2003-07-08 2005-10-18 Memc Electronic Materials, Inc. Process for preparing a stabilized ideal oxygen precipitating silicon wafer
CN100338270C (zh) * 2004-11-05 2007-09-19 北京有色金属研究总院 一种单晶硅抛光片热处理工艺
US7485928B2 (en) * 2005-11-09 2009-02-03 Memc Electronic Materials, Inc. Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
JP5121139B2 (ja) * 2005-12-27 2013-01-16 ジルトロニック アクチエンゲゼルシャフト アニールウエハの製造方法
WO2007137182A2 (en) 2006-05-19 2007-11-29 Memc Electronic Materials, Inc. Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
US20090004458A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Diffusion Control in Heavily Doped Substrates
US20090004426A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
JP5597378B2 (ja) * 2009-03-27 2014-10-01 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法
WO2014078847A1 (en) * 2012-11-19 2014-05-22 Sunedison, Inc. Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei by heat treatment
JP6260100B2 (ja) * 2013-04-03 2018-01-17 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
FR3009380B1 (fr) * 2013-08-02 2015-07-31 Commissariat Energie Atomique Procede de localisation d'une plaquette dans son lingot
DE112017003436T5 (de) * 2016-07-06 2019-03-21 Tokuyama Corporation Einkristalliner, plattenförmiger Siliziumkörper und Verfahren zu dessen Herstellung
CN110121788B (zh) * 2016-11-14 2023-03-28 信越化学工业株式会社 高光电转换效率太阳能电池的制造方法及高光电转换效率太阳能电池
CN109841513A (zh) * 2017-11-24 2019-06-04 上海新昇半导体科技有限公司 一种晶片及其制造方法、电子装置
CN109346433B (zh) * 2018-09-26 2020-10-23 上海新傲科技股份有限公司 半导体衬底的键合方法以及键合后的半导体衬底
CN119290517A (zh) * 2024-09-30 2025-01-10 宁夏中欣晶圆半导体科技有限公司 批量检测轻掺型硅单晶间隙氧变化量的方法

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GB2080780B (en) * 1980-07-18 1983-06-29 Secr Defence Heat treatment of silicon slices
NL8102101A (nl) * 1981-04-29 1982-11-16 Philips Nv Werkwijze voor het optrekken van een siliciumstaaf en halfgeleiderinrichting vervaardigd uit de siliciumstaaf.
JPS57197827A (en) * 1981-05-29 1982-12-04 Hitachi Ltd Semiconductor substrate
US4437922A (en) * 1982-03-26 1984-03-20 International Business Machines Corporation Method for tailoring oxygen precipitate particle density and distribution silicon wafers
EP0098406A1 (de) * 1982-07-06 1984-01-18 Texas Instruments Incorporated Wachsende Keimbildung von Änderungen in fester Phase
US4622082A (en) * 1984-06-25 1986-11-11 Monsanto Company Conditioned semiconductor substrates
US4809196A (en) * 1986-04-10 1989-02-28 International Business Machines Corporation Method for designating/sorting semiconductor wafers according to predicted oxygen precipitation behavior
US4851358A (en) * 1988-02-11 1989-07-25 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
KR0165856B1 (ko) * 1988-05-17 1999-02-01 윌리엄 에이취 오우웬 침착 터널링 산화물의 제조방법
JPH0226031A (ja) * 1988-07-14 1990-01-29 Toshiba Ceramics Co Ltd シリコンウェーハ
DE3841352A1 (de) * 1988-12-08 1990-06-21 Philips Patentverwaltung Verfahren zur herstellung eines maskentraegers aus sic fuer strahlungslithographie-masken
JPH02263792A (ja) * 1989-03-31 1990-10-26 Shin Etsu Handotai Co Ltd シリコンの熱処理方法
US5096839A (en) * 1989-09-20 1992-03-17 Kabushiki Kaisha Toshiba Silicon wafer with defined interstitial oxygen concentration
JPH0777994B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
JP2588632B2 (ja) * 1990-09-12 1997-03-05 富士通株式会社 シリコン単結晶の酸素析出方法
JPH0750713B2 (ja) * 1990-09-21 1995-05-31 コマツ電子金属株式会社 半導体ウェーハの熱処理方法
IT1242014B (it) * 1990-11-15 1994-02-02 Memc Electronic Materials Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici.
KR960000952B1 (ko) * 1991-03-05 1996-01-15 후지쓰 가부시끼가이샤 반도체 장치의 생산공정
JP2758093B2 (ja) * 1991-10-07 1998-05-25 信越半導体株式会社 半導体ウェーハの製造方法
CA2064486C (en) * 1992-03-31 2001-08-21 Alain Comeau Method of preparing semiconductor wafer with good intrinsic gettering

Also Published As

Publication number Publication date
SG43246A1 (en) 1997-10-17
MY115003A (en) 2003-03-31
EP0732431A1 (de) 1996-09-18
DE69630328T2 (de) 2004-05-06
EP0732431B1 (de) 2003-10-15
KR960035771A (ko) 1996-10-28
TW344850B (en) 1998-11-11
US5593494A (en) 1997-01-14
CN1061705C (zh) 2001-02-07
JPH08253392A (ja) 1996-10-01
CN1136604A (zh) 1996-11-27

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