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GB2080780B - Heat treatment of silicon slices - Google Patents

Heat treatment of silicon slices

Info

Publication number
GB2080780B
GB2080780B GB8121544A GB8121544A GB2080780B GB 2080780 B GB2080780 B GB 2080780B GB 8121544 A GB8121544 A GB 8121544A GB 8121544 A GB8121544 A GB 8121544A GB 2080780 B GB2080780 B GB 2080780B
Authority
GB
United Kingdom
Prior art keywords
heat treatment
silicon slices
slices
silicon
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8121544A
Other versions
GB2080780A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SECR DEFENCE
UK Secretary of State for Defence
Original Assignee
SECR DEFENCE
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SECR DEFENCE, UK Secretary of State for Defence filed Critical SECR DEFENCE
Priority to GB8121544A priority Critical patent/GB2080780B/en
Publication of GB2080780A publication Critical patent/GB2080780A/en
Application granted granted Critical
Publication of GB2080780B publication Critical patent/GB2080780B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H10P36/20—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB8121544A 1980-07-18 1981-07-13 Heat treatment of silicon slices Expired GB2080780B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8121544A GB2080780B (en) 1980-07-18 1981-07-13 Heat treatment of silicon slices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8023539 1980-07-18
GB8121544A GB2080780B (en) 1980-07-18 1981-07-13 Heat treatment of silicon slices

Publications (2)

Publication Number Publication Date
GB2080780A GB2080780A (en) 1982-02-10
GB2080780B true GB2080780B (en) 1983-06-29

Family

ID=26276264

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8121544A Expired GB2080780B (en) 1980-07-18 1981-07-13 Heat treatment of silicon slices

Country Status (1)

Country Link
GB (1) GB2080780B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437922A (en) 1982-03-26 1984-03-20 International Business Machines Corporation Method for tailoring oxygen precipitate particle density and distribution silicon wafers

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4459159A (en) * 1982-09-29 1984-07-10 Mara William C O Method for making semi-insulating substrate by post-process heating of oxygenated and doped silicon
JPS59190300A (en) * 1983-04-08 1984-10-29 Hitachi Ltd Method and apparatus for production of semiconductor
US4548654A (en) * 1983-06-03 1985-10-22 Motorola, Inc. Surface denuding of silicon wafer
US4505759A (en) * 1983-12-19 1985-03-19 Mara William C O Method for making a conductive silicon substrate by heat treatment of oxygenated and lightly doped silicon single crystals
US4666532A (en) * 1984-05-04 1987-05-19 Monsanto Company Denuding silicon substrates with oxygen and halogen
US4622082A (en) * 1984-06-25 1986-11-11 Monsanto Company Conditioned semiconductor substrates
JPH02263792A (en) * 1989-03-31 1990-10-26 Shin Etsu Handotai Co Ltd Heat treatment of silicon
JP2725460B2 (en) * 1991-01-22 1998-03-11 日本電気株式会社 Manufacturing method of epitaxial wafer
JP2613498B2 (en) * 1991-03-15 1997-05-28 信越半導体株式会社 Heat treatment method for Si single crystal wafer
JPH0684925A (en) * 1992-07-17 1994-03-25 Toshiba Corp Semiconductor substrate and processing method thereof
JPH0786289A (en) * 1993-07-22 1995-03-31 Toshiba Corp Semiconductor silicon wafer and manufacturing method thereof
US5629216A (en) * 1994-06-30 1997-05-13 Seh America, Inc. Method for producing semiconductor wafers with low light scattering anomalies
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
JP4566478B2 (en) * 2001-08-09 2010-10-20 シルトロニック・ジャパン株式会社 Silicon semiconductor substrate and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437922A (en) 1982-03-26 1984-03-20 International Business Machines Corporation Method for tailoring oxygen precipitate particle density and distribution silicon wafers

Also Published As

Publication number Publication date
GB2080780A (en) 1982-02-10

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee