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DE60335382D1 - Verfahren zur getrennten seitenwandoxidation einer flash-speicherzelle - Google Patents

Verfahren zur getrennten seitenwandoxidation einer flash-speicherzelle

Info

Publication number
DE60335382D1
DE60335382D1 DE60335382T DE60335382T DE60335382D1 DE 60335382 D1 DE60335382 D1 DE 60335382D1 DE 60335382 T DE60335382 T DE 60335382T DE 60335382 T DE60335382 T DE 60335382T DE 60335382 D1 DE60335382 D1 DE 60335382D1
Authority
DE
Germany
Prior art keywords
side wall
memory cell
flash memory
separated side
wall oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60335382T
Other languages
English (en)
Inventor
Danny Shum
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE60335382D1 publication Critical patent/DE60335382D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE60335382T 2002-09-04 2003-09-03 Verfahren zur getrennten seitenwandoxidation einer flash-speicherzelle Expired - Lifetime DE60335382D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/234,344 US6841824B2 (en) 2002-09-04 2002-09-04 Flash memory cell and the method of making separate sidewall oxidation
PCT/EP2003/009779 WO2004023558A2 (en) 2002-09-04 2003-09-03 Flash memory cell and the method of making separate sidewall oxidation

Publications (1)

Publication Number Publication Date
DE60335382D1 true DE60335382D1 (de) 2011-01-27

Family

ID=31977402

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60335382T Expired - Lifetime DE60335382D1 (de) 2002-09-04 2003-09-03 Verfahren zur getrennten seitenwandoxidation einer flash-speicherzelle

Country Status (7)

Country Link
US (2) US6841824B2 (de)
EP (1) EP1535337B1 (de)
JP (1) JP4621023B2 (de)
CN (2) CN100530659C (de)
DE (1) DE60335382D1 (de)
TW (1) TWI231575B (de)
WO (1) WO2004023558A2 (de)

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US6909139B2 (en) * 2003-06-27 2005-06-21 Infineon Technologies Ag One transistor flash memory cell
US7160771B2 (en) * 2003-11-28 2007-01-09 International Business Machines Corporation Forming gate oxides having multiple thicknesses
US6972457B1 (en) * 2004-04-09 2005-12-06 Eastman Kodak Company Imaging cell that has a long integration period and method of operating the imaging cell
KR100624290B1 (ko) * 2004-06-14 2006-09-19 에스티마이크로일렉트로닉스 엔.브이. 플래쉬 메모리 소자의 제조 방법
ITMI20042532A1 (it) * 2004-12-28 2005-03-28 St Microelectronics Srl Metodo per fabbricare dispositivi elettronici di memoria non volatile integrati su un substrato semiconduttore comprendente una fase di deposizione di dielettrico premetal migliorata
US7679130B2 (en) 2005-05-10 2010-03-16 Infineon Technologies Ag Deep trench isolation structures and methods of formation thereof
US7495279B2 (en) * 2005-09-09 2009-02-24 Infineon Technologies Ag Embedded flash memory devices on SOI substrates and methods of manufacture thereof
US20070133289A1 (en) * 2005-12-01 2007-06-14 Aplus Flash Technology, Inc. NAND-type flash memory device with high voltage PMOS and embedded poly and methods of fabricating the same
US20080112231A1 (en) * 2006-11-09 2008-05-15 Danny Pak-Chum Shum Semiconductor devices and methods of manufacture thereof
CN102544004A (zh) * 2010-12-09 2012-07-04 和舰科技(苏州)有限公司 一种嵌入式闪存及其制造方法
US8916909B2 (en) 2012-03-06 2014-12-23 Infineon Technologies Austria Ag Semiconductor device and method for fabricating a semiconductor device
CN108630700A (zh) * 2017-03-22 2018-10-09 中芯国际集成电路制造(上海)有限公司 闪存器件及其制造方法
US10297602B2 (en) 2017-05-18 2019-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Implantations for forming source/drain regions of different transistors
KR102212751B1 (ko) 2019-07-26 2021-02-04 주식회사 키 파운드리 비휘발성 메모리 소자 및 그 제조방법
TW202118280A (zh) * 2019-09-10 2021-05-01 日商索尼半導體解決方案公司 攝像裝置、電子機𠾖及製造方法

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JP3450770B2 (ja) * 1999-11-29 2003-09-29 松下電器産業株式会社 半導体装置の製造方法
US6188045B1 (en) * 2000-04-03 2001-02-13 Alto-Shaam, Inc. Combination oven with three-stage water atomizer
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KR100347145B1 (ko) 2000-08-29 2002-08-03 주식회사 하이닉스반도체 플래시 셀 배열에서 세그먼트 트랜지스터와 셀 영역의연결방법
JP2002118177A (ja) 2000-10-11 2002-04-19 Toshiba Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
TWI231575B (en) 2005-04-21
CN101483178A (zh) 2009-07-15
EP1535337A2 (de) 2005-06-01
TW200409302A (en) 2004-06-01
CN101483178B (zh) 2011-08-03
US20050040474A1 (en) 2005-02-24
JP4621023B2 (ja) 2011-01-26
US7081381B2 (en) 2006-07-25
EP1535337B1 (de) 2010-12-15
US20040041205A1 (en) 2004-03-04
CN1679166A (zh) 2005-10-05
US6841824B2 (en) 2005-01-11
WO2004023558A3 (en) 2004-09-02
WO2004023558A2 (en) 2004-03-18
JP2005537671A (ja) 2005-12-08
CN100530659C (zh) 2009-08-19

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