DE60318301D1 - Mit positiv geladenen polyelektrolyten behandelte anionische schleifmittelteilchen für das chemomechanische polieren - Google Patents
Mit positiv geladenen polyelektrolyten behandelte anionische schleifmittelteilchen für das chemomechanische polierenInfo
- Publication number
- DE60318301D1 DE60318301D1 DE60318301T DE60318301T DE60318301D1 DE 60318301 D1 DE60318301 D1 DE 60318301D1 DE 60318301 T DE60318301 T DE 60318301T DE 60318301 T DE60318301 T DE 60318301T DE 60318301 D1 DE60318301 D1 DE 60318301D1
- Authority
- DE
- Germany
- Prior art keywords
- polyelectrolytes
- antibody
- particles treated
- grinding particles
- chemomechanical polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005498 polishing Methods 0.000 title abstract 4
- 229920000867 polyelectrolyte Polymers 0.000 title abstract 3
- 239000002245 particle Substances 0.000 title abstract 2
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Disintegrating Or Milling (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/073,844 US6776810B1 (en) | 2002-02-11 | 2002-02-11 | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US73844 | 2002-02-11 | ||
| PCT/US2003/003930 WO2003068883A1 (en) | 2002-02-11 | 2003-02-10 | Anionic abrasive particles treated with positively-charged polyelectrolytes for cmp |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60318301D1 true DE60318301D1 (de) | 2008-02-07 |
| DE60318301T2 DE60318301T2 (de) | 2008-04-10 |
Family
ID=27732349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60318301T Expired - Lifetime DE60318301T2 (de) | 2002-02-11 | 2003-02-10 | Mit positiv geladenen polyelektrolyten behandelte anionische schleifmittelteilchen für das chemomechanische polieren |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US6776810B1 (de) |
| EP (1) | EP1483349B1 (de) |
| JP (1) | JP4750362B2 (de) |
| KR (2) | KR100972730B1 (de) |
| CN (1) | CN1325591C (de) |
| AT (1) | ATE382076T1 (de) |
| AU (1) | AU2003216217A1 (de) |
| DE (1) | DE60318301T2 (de) |
| TW (1) | TWI241339B (de) |
| WO (1) | WO2003068883A1 (de) |
Families Citing this family (125)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US20040175942A1 (en) * | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US6916742B2 (en) * | 2003-02-27 | 2005-07-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Modular barrier removal polishing slurry |
| JP3974127B2 (ja) * | 2003-09-12 | 2007-09-12 | 株式会社東芝 | 半導体装置の製造方法 |
| US7241725B2 (en) * | 2003-09-25 | 2007-07-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Barrier polishing fluid |
| US20050097825A1 (en) * | 2003-11-06 | 2005-05-12 | Jinru Bian | Compositions and methods for a barrier removal |
| TWI288046B (en) * | 2003-11-14 | 2007-10-11 | Showa Denko Kk | Polishing composition and polishing method |
| WO2005047410A1 (en) * | 2003-11-14 | 2005-05-26 | Showa Denko K.K. | Polishing composition and polishing method |
| KR100640600B1 (ko) * | 2003-12-12 | 2006-11-01 | 삼성전자주식회사 | 슬러리 조성물 및 이를 이용한 화학기계적연마공정를포함하는 반도체 소자의 제조방법 |
| US7314578B2 (en) * | 2003-12-12 | 2008-01-01 | Samsung Electronics Co., Ltd. | Slurry compositions and CMP methods using the same |
| TW200613485A (en) * | 2004-03-22 | 2006-05-01 | Kao Corp | Polishing composition |
| US7059936B2 (en) * | 2004-03-23 | 2006-06-13 | Cabot Microelectronics Corporation | Low surface energy CMP pad |
| US7204742B2 (en) | 2004-03-25 | 2007-04-17 | Cabot Microelectronics Corporation | Polishing pad comprising hydrophobic region and endpoint detection port |
| DE102004016600A1 (de) * | 2004-04-03 | 2005-10-27 | Degussa Ag | Dispersion zum chemisch-mechanischen Polieren von Metalloberflächen enthaltend Metalloxidpartikel und ein kationisches Polymer |
| US7582127B2 (en) * | 2004-06-16 | 2009-09-01 | Cabot Microelectronics Corporation | Polishing composition for a tungsten-containing substrate |
| US7247567B2 (en) | 2004-06-16 | 2007-07-24 | Cabot Microelectronics Corporation | Method of polishing a tungsten-containing substrate |
| US7161247B2 (en) | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
| US20060089095A1 (en) | 2004-10-27 | 2006-04-27 | Swisher Robert G | Polyurethane urea polishing pad |
| US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| JP4836441B2 (ja) * | 2004-11-30 | 2011-12-14 | 花王株式会社 | 研磨液組成物 |
| US7674716B2 (en) * | 2004-12-29 | 2010-03-09 | Lg Chem. Ltd. | Adjuvant for chemical mechanical polishing slurry |
| KR100786950B1 (ko) * | 2004-12-29 | 2007-12-17 | 주식회사 엘지화학 | Cmp 슬러리용 보조제 |
| KR100684877B1 (ko) * | 2005-01-05 | 2007-02-20 | 삼성전자주식회사 | 슬러리 조성물 및 이를 이용한 화학적 기계적 연마 공정을포함하는 반도체 소자 제조 방법 |
| JP4628423B2 (ja) * | 2005-04-14 | 2011-02-09 | 昭和電工株式会社 | 基板の研磨及び製造方法 |
| KR100665122B1 (ko) * | 2005-04-22 | 2007-01-09 | 삼성전기주식회사 | 화학적 작용기를 도입하여 세라믹 분말 및 슬러리를안정화시키는 방법 |
| KR101332302B1 (ko) * | 2005-06-06 | 2013-11-25 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 단일 플래튼 처리를 위한 방법 및 일체형 화학적 기계적연마 조성물 |
| JP4987254B2 (ja) | 2005-06-22 | 2012-07-25 | 株式会社東芝 | 半導体装置の製造方法 |
| US20070037491A1 (en) * | 2005-08-12 | 2007-02-15 | Yuzhuo Li | Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing |
| US20070075042A1 (en) * | 2005-10-05 | 2007-04-05 | Siddiqui Junaid A | Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method |
| US7265055B2 (en) * | 2005-10-26 | 2007-09-04 | Cabot Microelectronics Corporation | CMP of copper/ruthenium substrates |
| KR100786949B1 (ko) | 2005-12-08 | 2007-12-17 | 주식회사 엘지화학 | 연마 선택도 조절 보조제 및 이를 함유한 cmp 슬러리 |
| KR100786948B1 (ko) | 2005-12-08 | 2007-12-17 | 주식회사 엘지화학 | 연마 선택비 조절제 및 이를 함유한 cmp 슬러리 |
| KR100880107B1 (ko) * | 2006-01-25 | 2009-01-21 | 주식회사 엘지화학 | Cmp 슬러리 및 이를 이용한 반도체 웨이퍼의 연마 방법 |
| US20070209287A1 (en) * | 2006-03-13 | 2007-09-13 | Cabot Microelectronics Corporation | Composition and method to polish silicon nitride |
| US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
| US20080220610A1 (en) * | 2006-06-29 | 2008-09-11 | Cabot Microelectronics Corporation | Silicon oxide polishing method utilizing colloidal silica |
| US7998866B2 (en) * | 2006-09-05 | 2011-08-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
| US8057561B2 (en) * | 2006-09-11 | 2011-11-15 | Cabot Microelectronics Corporation | Polyoxometalate compositions and methods |
| US20080105652A1 (en) * | 2006-11-02 | 2008-05-08 | Cabot Microelectronics Corporation | CMP of copper/ruthenium/tantalum substrates |
| JP5094112B2 (ja) * | 2006-12-28 | 2012-12-12 | 富士フイルム株式会社 | 研磨液 |
| JP5094139B2 (ja) * | 2007-01-23 | 2012-12-12 | 富士フイルム株式会社 | 研磨液 |
| US7691287B2 (en) * | 2007-01-31 | 2010-04-06 | Dupont Air Products Nanomaterials Llc | Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization |
| US20080203059A1 (en) * | 2007-02-27 | 2008-08-28 | Cabot Microelectronics Corporation | Dilutable cmp composition containing a surfactant |
| US8541310B2 (en) * | 2007-05-04 | 2013-09-24 | Cabot Microelectronics Corporation | CMP compositions containing a soluble peroxometalate complex and methods of use thereof |
| US8008202B2 (en) * | 2007-08-01 | 2011-08-30 | Cabot Microelectronics Corporation | Ruthenium CMP compositions and methods |
| JP2009050920A (ja) * | 2007-08-23 | 2009-03-12 | Asahi Glass Co Ltd | 磁気ディスク用ガラス基板の製造方法 |
| US20090056231A1 (en) * | 2007-08-28 | 2009-03-05 | Daniela White | Copper CMP composition containing ionic polyelectrolyte and method |
| WO2009042072A2 (en) | 2007-09-21 | 2009-04-02 | Cabot Microelectronics Corporation | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
| US20090090696A1 (en) * | 2007-10-08 | 2009-04-09 | Cabot Microelectronics Corporation | Slurries for polishing oxide and nitride with high removal rates |
| KR100949250B1 (ko) * | 2007-10-10 | 2010-03-25 | 제일모직주식회사 | 금속 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
| US8247045B2 (en) * | 2007-11-08 | 2012-08-21 | Eastman Kodak Company | Inkjet recording element |
| TWI393181B (zh) * | 2008-07-02 | 2013-04-11 | Anji Microelectronics Co Ltd | 用於阻擋層之化學機械拋光液 |
| JP5361306B2 (ja) * | 2008-09-19 | 2013-12-04 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
| US8480920B2 (en) * | 2009-04-02 | 2013-07-09 | Jsr Corporation | Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method |
| CN102120928B (zh) * | 2010-01-08 | 2013-11-06 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨剂及化学机械研磨方法 |
| JP5695367B2 (ja) | 2010-08-23 | 2015-04-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| KR101907863B1 (ko) * | 2010-09-08 | 2018-10-15 | 바스프 에스이 | 수성 폴리싱 조성물, 및 전기적, 기계적 및 광학적 장치용 기판 재료의 화학적 기계적 폴리싱 방법 |
| JP5925454B2 (ja) * | 2010-12-16 | 2016-05-25 | 花王株式会社 | 磁気ディスク基板用研磨液組成物 |
| WO2012103091A2 (en) * | 2011-01-24 | 2012-08-02 | Clarkson University | Abrasive free silicon chemical mechanical planarization |
| US8435896B2 (en) * | 2011-03-03 | 2013-05-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stable, concentratable chemical mechanical polishing composition and methods relating thereto |
| US8790160B2 (en) * | 2011-04-28 | 2014-07-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing phase change alloys |
| US8623766B2 (en) * | 2011-09-20 | 2014-01-07 | Cabot Microelectronics Corporation | Composition and method for polishing aluminum semiconductor substrates |
| US8999193B2 (en) * | 2012-05-10 | 2015-04-07 | Air Products And Chemicals, Inc. | Chemical mechanical polishing composition having chemical additives and methods for using same |
| JP5957292B2 (ja) * | 2012-05-18 | 2016-07-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
| US8778211B2 (en) * | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
| JP6054149B2 (ja) * | 2012-11-15 | 2016-12-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| KR102160024B1 (ko) * | 2013-02-28 | 2020-09-25 | 가부시키가이샤 후지미인코퍼레이티드 | 코발트 제거를 위한 연마 슬러리 |
| US9358659B2 (en) | 2013-03-04 | 2016-06-07 | Cabot Microelectronics Corporation | Composition and method for polishing glass |
| US8961807B2 (en) | 2013-03-15 | 2015-02-24 | Cabot Microelectronics Corporation | CMP compositions with low solids content and methods related thereto |
| JP6093213B2 (ja) * | 2013-03-15 | 2017-03-08 | 株式会社トクヤマデンタル | 無機凝集粒子、有機無機複合フィラー、及びそれらの製造方法 |
| KR101470980B1 (ko) * | 2013-04-18 | 2014-12-09 | 주식회사 케이씨텍 | 표면 개질된 연마입자 및 그를 포함하는 슬러리 조성물 |
| WO2014175393A1 (ja) * | 2013-04-25 | 2014-10-30 | 日立化成株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
| US20160086819A1 (en) * | 2013-04-25 | 2016-03-24 | Hitachi Chemical Company, Ltd. | Cmp polishing solution and polishing method using same |
| KR20160009644A (ko) * | 2013-05-15 | 2016-01-26 | 바스프 에스이 | 적어도 하나의 iii-v 재료를 포함하는 물질 또는 층을 연마하기 위한 cmp 조성물의 용도 |
| MY177867A (en) * | 2013-05-15 | 2020-09-23 | Basf Se | Chemical-mechanical polishing compositions comprising one or more polymers selected from the group consisting of n-vinyl-homopolymers and n-vinyl copolymers |
| JP6377726B2 (ja) * | 2013-05-15 | 2018-08-22 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | ポリエチレンイミンを含む化学機械研磨組成物の使用方法 |
| US9303187B2 (en) * | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
| JPWO2015129342A1 (ja) | 2014-02-26 | 2017-03-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US9303188B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9238754B2 (en) * | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9303189B2 (en) * | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US20150259804A1 (en) * | 2014-03-12 | 2015-09-17 | Cabot Microelectronics Corporation | Compositions and methods for cmp of tungsten materials |
| SG11201606830WA (en) * | 2014-03-14 | 2016-09-29 | Cabot Microelectronics Corp | Composition and method for polishing glass |
| JP6306383B2 (ja) | 2014-03-17 | 2018-04-04 | 日本キャボット・マイクロエレクトロニクス株式会社 | スラリー組成物および基板研磨方法 |
| US9309442B2 (en) | 2014-03-21 | 2016-04-12 | Cabot Microelectronics Corporation | Composition for tungsten buffing |
| US9303190B2 (en) | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| JP6349852B2 (ja) * | 2014-03-27 | 2018-07-04 | 日立化成株式会社 | 研磨剤、研磨剤用貯蔵液及び研磨方法 |
| US9583359B2 (en) * | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
| US20170022392A1 (en) * | 2014-04-04 | 2017-01-26 | Fujimi Incorporated | Polishing composition for hard materials |
| KR102511928B1 (ko) * | 2014-06-25 | 2023-03-20 | 씨엠씨 머티리얼즈, 인코포레이티드 | 텅스텐 화학적-기계적 연마 조성물 |
| US9803106B2 (en) | 2014-06-25 | 2017-10-31 | Cabot Microelectronics Corporation | Methods for fabricating a chemical-mechanical polishing composition |
| TWI564380B (zh) | 2014-06-25 | 2017-01-01 | 卡博特微電子公司 | 銅障壁層化學機械拋光組合物 |
| JP2016069450A (ja) * | 2014-09-29 | 2016-05-09 | 株式会社フジミインコーポレーテッド | 硬質金属材料研磨用砥粒、研磨用組成物および硬質金属製品製造方法 |
| JP6396740B2 (ja) * | 2014-09-29 | 2018-09-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
| JP2016069535A (ja) * | 2014-09-30 | 2016-05-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びその製造方法並びに研磨方法 |
| US10570313B2 (en) | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
| US9758697B2 (en) * | 2015-03-05 | 2017-09-12 | Cabot Microelectronics Corporation | Polishing composition containing cationic polymer additive |
| US10119049B2 (en) | 2015-06-17 | 2018-11-06 | Hitachi Chemical Company, Ltd. | Polishing agent, storage solution for polishing agent and polishing method |
| TWI666308B (zh) * | 2015-06-26 | 2019-07-21 | 日商日立化成股份有限公司 | 研磨劑、研磨劑用儲藏液及研磨方法 |
| US10294399B2 (en) * | 2017-01-05 | 2019-05-21 | Cabot Microelectronics Corporation | Composition and method for polishing silicon carbide |
| KR102422952B1 (ko) | 2017-06-12 | 2022-07-19 | 삼성전자주식회사 | 금속막 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법 |
| CN109096990A (zh) | 2017-06-21 | 2018-12-28 | 圣戈本陶瓷及塑料股份有限公司 | 表面改性的研磨颗粒、研磨制品以及其形成方法 |
| US11043151B2 (en) * | 2017-10-03 | 2021-06-22 | Cmc Materials, Inc. | Surface treated abrasive particles for tungsten buff applications |
| US10428241B2 (en) | 2017-10-05 | 2019-10-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions containing charged abrasive |
| JP7373503B2 (ja) * | 2018-05-07 | 2023-11-02 | アプライド マテリアルズ インコーポレイテッド | 親水性及びゼータ電位の調節可能な化学機械研磨パッド |
| JP7161894B2 (ja) * | 2018-09-04 | 2022-10-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨システム |
| CN108949036B (zh) * | 2018-09-06 | 2021-01-05 | 北京保利世达科技有限公司 | 一种抛光液及对碳化硅晶体的抛光方法 |
| CN109269867B (zh) * | 2018-09-11 | 2020-12-11 | 大连理工大学 | 钨镍铁合金抛光液及合金表面抛光、金相制备方法 |
| KR102782857B1 (ko) | 2019-03-13 | 2025-03-14 | 삼성전자주식회사 | 연마 슬러리 및 반도체 소자의 제조 방법 |
| US11597854B2 (en) * | 2019-07-16 | 2023-03-07 | Cmc Materials, Inc. | Method to increase barrier film removal rate in bulk tungsten slurry |
| CN114729258A (zh) * | 2020-02-13 | 2022-07-08 | 昭和电工材料株式会社 | Cmp研磨液及研磨方法 |
| WO2021161462A1 (ja) * | 2020-02-13 | 2021-08-19 | 昭和電工マテリアルズ株式会社 | Cmp研磨液及び研磨方法 |
| CN111590477B (zh) * | 2020-05-27 | 2023-03-03 | 广东伟艺抛磨材料有限公司 | 一种加工无纺布抛光轮的原料及无纺布抛光轮的制造方法 |
| CN111748285A (zh) * | 2020-06-22 | 2020-10-09 | 宁波日晟新材料有限公司 | 一种含高铁酸盐的碳化硅抛光液及其制备方法和应用 |
| JP7519865B2 (ja) * | 2020-10-09 | 2024-07-22 | 花王株式会社 | 研磨方法 |
| JP7606316B2 (ja) * | 2020-10-09 | 2024-12-25 | 花王株式会社 | 研磨方法 |
| JP7606315B2 (ja) * | 2020-10-09 | 2024-12-25 | 花王株式会社 | 研磨方法 |
| WO2022246381A1 (en) | 2021-05-20 | 2022-11-24 | Versum Materials Us, Llc | Imidazolium-based poly(ionic liquid)s and use therefore |
| US12428580B2 (en) | 2021-08-25 | 2025-09-30 | Cmc Materials Llc | CMP composition including an anionic abrasive |
| DE102022123211A1 (de) * | 2022-09-12 | 2024-03-14 | Otec Präzisionsfinish GmbH | Elektrolytmedium und Verfahren zum elektrochemischen Polieren von metallischen Werkstücken unter Verwendung eines solchen Elektrolytmediums |
| TW202436583A (zh) | 2023-03-01 | 2024-09-16 | 日商Jsr 股份有限公司 | 化學機械研磨用組成物及研磨方法 |
| JP7808393B1 (ja) | 2025-11-18 | 2026-01-29 | 浅田化学工業株式会社 | アルミナ水分散液及びその製造方法 |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4752628A (en) | 1987-05-15 | 1988-06-21 | Nalco Chemical Company | Concentrated lapping slurries |
| JPS6487146A (en) | 1987-09-22 | 1989-03-31 | Lion Corp | Dispersant for polishing agent |
| US4867757A (en) | 1988-09-09 | 1989-09-19 | Nalco Chemical Company | Lapping slurry compositions with improved lap rate |
| US5352277A (en) | 1988-12-12 | 1994-10-04 | E. I. Du Pont De Nemours & Company | Final polishing composition |
| US5123958A (en) | 1990-05-25 | 1992-06-23 | Wiand Ronald C | Polishing composition and method |
| JPH06111212A (ja) * | 1992-09-24 | 1994-04-22 | Rohm Co Ltd | 音声記録装置 |
| US5489233A (en) | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
| US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US5860848A (en) | 1995-06-01 | 1999-01-19 | Rodel, Inc. | Polishing silicon wafers with improved polishing slurries |
| JPH0982668A (ja) | 1995-09-20 | 1997-03-28 | Sony Corp | 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法 |
| US5958794A (en) | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
| WO1998004646A1 (en) | 1996-07-25 | 1998-02-05 | Ekc Technology, Inc. | Chemical mechanical polishing composition and process |
| US6132637A (en) | 1996-09-27 | 2000-10-17 | Rodel Holdings, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
| US5876490A (en) | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
| US6099604A (en) | 1997-08-21 | 2000-08-08 | Micron Technology, Inc. | Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto |
| US6117532A (en) * | 1997-10-30 | 2000-09-12 | E. I. Du Pont De Nemours And Company | Interdraw pretreatment for polyester film |
| JP3371775B2 (ja) | 1997-10-31 | 2003-01-27 | 株式会社日立製作所 | 研磨方法 |
| US5968280A (en) | 1997-11-12 | 1999-10-19 | International Business Machines Corporation | Method for cleaning a surface |
| WO1999064527A1 (en) | 1998-06-10 | 1999-12-16 | Rodel Holdings, Inc. | Composition and method for polishing in metal cmp |
| TW455626B (en) | 1998-07-23 | 2001-09-21 | Eternal Chemical Co Ltd | Chemical mechanical abrasive composition for use in semiconductor processing |
| JP3545950B2 (ja) * | 1998-10-29 | 2004-07-21 | ロデール・ニッタ株式会社 | 研磨用組成物 |
| SG78405A1 (en) | 1998-11-17 | 2001-02-20 | Fujimi Inc | Polishing composition and rinsing composition |
| JP3591344B2 (ja) | 1998-11-27 | 2004-11-17 | 松下電器産業株式会社 | バンプ付電子部品の実装方法 |
| KR100447552B1 (ko) | 1999-03-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 수계 분산체 및 반도체 장치의 제조에 사용하는 화학 기계연마용 수계 분산체 및 반도체 장치의 제조 방법 및 매립배선의 형성 방법 |
| WO2001002134A1 (en) | 1999-07-03 | 2001-01-11 | Rodel Holdings, Inc. | Improved chemical mechanical polishing slurries for metal |
| CA2378790A1 (en) | 1999-08-13 | 2001-02-22 | Cabot Microelectronics Corporation | Polishing system and method of its use |
| EP1210395B1 (de) | 1999-08-24 | 2003-10-22 | Rodel Holdings, Inc. | Zusammensetzung und verfahren zum chemisch-mechanischen polieren von isolatoren und metallen |
| TW499471B (en) | 1999-09-01 | 2002-08-21 | Eternal Chemical Co Ltd | Chemical mechanical/abrasive composition for semiconductor processing |
| JP2003509855A (ja) | 1999-09-15 | 2003-03-11 | ロデール ホールディングス インコーポレイテッド | 化学機械研磨中に不溶性ケイ酸塩を形成するためのスラリー |
| US6348076B1 (en) * | 1999-10-08 | 2002-02-19 | International Business Machines Corporation | Slurry for mechanical polishing (CMP) of metals and use thereof |
| JP4041252B2 (ja) * | 1999-11-01 | 2008-01-30 | 株式会社東芝 | 化学機械研磨用粒子及び化学機械研磨用水系分散体 |
| JP2001139937A (ja) * | 1999-11-11 | 2001-05-22 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
| JP3902897B2 (ja) * | 1999-11-15 | 2007-04-11 | 日立化成工業株式会社 | 金属用研磨液を用いた基板の研磨方法 |
| US6582761B1 (en) | 1999-11-22 | 2003-06-24 | Jsr Corporation | Method of production of composited particle, composited particle produced by this method and aqueous dispersion for chemical mechanical polishing containing this composited particle, and method of production of aqueous dispersion for chemical mechanical polishing |
| JP2001185514A (ja) * | 1999-12-27 | 2001-07-06 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
| US6375548B1 (en) * | 1999-12-30 | 2002-04-23 | Micron Technology, Inc. | Chemical-mechanical polishing methods |
| EP1118647A1 (de) | 2000-01-18 | 2001-07-25 | Praxair S.T. Technology, Inc. | Polieraufschlämmung |
| JP2001226666A (ja) * | 2000-02-15 | 2001-08-21 | Hitachi Ltd | 研磨砥粒と研磨液及びその研磨方法並びに半導体装置の製造方法 |
| US6964923B1 (en) * | 2000-05-24 | 2005-11-15 | International Business Machines Corporation | Selective polishing with slurries containing polyelectrolytes |
| US7004819B2 (en) * | 2002-01-18 | 2006-02-28 | Cabot Microelectronics Corporation | CMP systems and methods utilizing amine-containing polymers |
| US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
-
2002
- 2002-02-11 US US10/073,844 patent/US6776810B1/en not_active Expired - Lifetime
-
2003
- 2003-01-29 TW TW092101952A patent/TWI241339B/zh not_active IP Right Cessation
- 2003-02-10 JP JP2003567999A patent/JP4750362B2/ja not_active Expired - Lifetime
- 2003-02-10 AU AU2003216217A patent/AU2003216217A1/en not_active Abandoned
- 2003-02-10 KR KR1020047012349A patent/KR100972730B1/ko not_active Expired - Fee Related
- 2003-02-10 AT AT03739720T patent/ATE382076T1/de not_active IP Right Cessation
- 2003-02-10 CN CNB03803719XA patent/CN1325591C/zh not_active Expired - Lifetime
- 2003-02-10 EP EP03739720A patent/EP1483349B1/de not_active Expired - Lifetime
- 2003-02-10 DE DE60318301T patent/DE60318301T2/de not_active Expired - Lifetime
- 2003-02-10 WO PCT/US2003/003930 patent/WO2003068883A1/en not_active Ceased
- 2003-02-10 KR KR1020107014721A patent/KR20100084197A/ko not_active Withdrawn
-
2004
- 2004-05-27 US US10/855,276 patent/US7306637B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TWI241339B (en) | 2005-10-11 |
| EP1483349B1 (de) | 2007-12-26 |
| JP4750362B2 (ja) | 2011-08-17 |
| EP1483349A1 (de) | 2004-12-08 |
| CN1630697A (zh) | 2005-06-22 |
| ATE382076T1 (de) | 2008-01-15 |
| TW200302865A (en) | 2003-08-16 |
| AU2003216217A1 (en) | 2003-09-04 |
| CN1325591C (zh) | 2007-07-11 |
| US20040229552A1 (en) | 2004-11-18 |
| KR20040088070A (ko) | 2004-10-15 |
| US7306637B2 (en) | 2007-12-11 |
| DE60318301T2 (de) | 2008-04-10 |
| WO2003068883A1 (en) | 2003-08-21 |
| JP2005518091A (ja) | 2005-06-16 |
| US6776810B1 (en) | 2004-08-17 |
| KR100972730B1 (ko) | 2010-07-27 |
| KR20100084197A (ko) | 2010-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE60318301D1 (de) | Mit positiv geladenen polyelektrolyten behandelte anionische schleifmittelteilchen für das chemomechanische polieren | |
| AU2003274812A8 (en) | Method for chemical mechanical polishing (cmp) of low-k dielectric materials | |
| ATE444342T1 (de) | Poliersystem mit hochverzweigtem polymer | |
| MY126250A (en) | Rare earth salt/oxidizer-based cmp method | |
| ATE321106T1 (de) | Cmp systeme und verfahren zur verwendung von aminoenthaltenden polymerisaten | |
| ATE311958T1 (de) | Artikel mit flixiertem schleifmittel zum verändern einer halbleiterscheibe | |
| ATE355933T1 (de) | Schleifartikel zur modifizierung einer halbleiterscheibe | |
| ATE296185T1 (de) | Verfahren und vorrichtung zum planarisieren von mikroelektronischem substratenaufbau | |
| WO2004076574A3 (en) | Cmp composition comprising a sulfonic acid and a method for polishing noble metals | |
| TW200626300A (en) | Chemical mechanical polishing pad dresser | |
| DE60205372D1 (de) | Zellenförmiger schleifgegenstand | |
| DE69713057D1 (de) | Polierkissen und verfahren zum herstellen von polierkissen mit kovalent gebundenen partikeln | |
| TW200624527A (en) | A cmp composition with a polymer additive for polishing noble metals | |
| DE69720212D1 (de) | Verfahren zur chemisch-mechanischen planarisierung von stopschicht halbleiterscheiben | |
| MY131030A (en) | Polishing pad with oriented pore structure | |
| ATE409212T1 (de) | An feststoff gebundener radikalbildender aktivator und verwendung zur verbesserung von formulierungen für das chemisch-mechanische polieren | |
| MY136726A (en) | Low surface energy cmp pad | |
| SE0301709D0 (sv) | Anordning för lösbart montering av åtminstone en slipelementbärande hållarplatta | |
| ATE472582T1 (de) | Belegte metalloxidteilchen für cmp | |
| TW200714406A (en) | Use of cmp for aluminum mirror and solar cell fabrication | |
| TW200704477A (en) | Polishing pad comprising magnetically sensitive particles and method for the use thereof | |
| DE60116148D1 (de) | System zur endpunktbestimmung beim chemisch-mechanischen polieren | |
| TW200514181A (en) | Apparatus for planarizing a probe card and method using same | |
| TW200633814A (en) | CMP pad having a radially alternating groove segment configuration | |
| TW200700544A (en) | Polymeric inhibitors for enhanced planarization |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |