DE60317768D1 - Leseverfahren eines nichtflüchtigen Halbleiterspeichers und zugehörige Vorrichtung - Google Patents
Leseverfahren eines nichtflüchtigen Halbleiterspeichers und zugehörige VorrichtungInfo
- Publication number
- DE60317768D1 DE60317768D1 DE60317768T DE60317768T DE60317768D1 DE 60317768 D1 DE60317768 D1 DE 60317768D1 DE 60317768 T DE60317768 T DE 60317768T DE 60317768 T DE60317768 T DE 60317768T DE 60317768 D1 DE60317768 D1 DE 60317768D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- volatile semiconductor
- reading method
- associated apparatus
- reading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5634—Reference cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP03425224A EP1467377B1 (de) | 2003-04-10 | 2003-04-10 | Leseverfahren eines nichtflüchtigen Halbleiterspeichers und zugehörige Vorrichtung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60317768D1 true DE60317768D1 (de) | 2008-01-10 |
| DE60317768T2 DE60317768T2 (de) | 2008-11-27 |
Family
ID=32865115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60317768T Expired - Lifetime DE60317768T2 (de) | 2003-04-10 | 2003-04-10 | Verfahren zum Auslesen einer nichtflüchtigen Speichervorrichtung und zugehörige Vorrichtung |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7054197B2 (de) |
| EP (1) | EP1467377B1 (de) |
| DE (1) | DE60317768T2 (de) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7046568B2 (en) | 2002-09-24 | 2006-05-16 | Sandisk Corporation | Memory sensing circuit and method for low voltage operation |
| US7324393B2 (en) | 2002-09-24 | 2008-01-29 | Sandisk Corporation | Method for compensated sensing in non-volatile memory |
| US7196931B2 (en) | 2002-09-24 | 2007-03-27 | Sandisk Corporation | Non-volatile memory and method with reduced source line bias errors |
| US7327619B2 (en) | 2002-09-24 | 2008-02-05 | Sandisk Corporation | Reference sense amplifier for non-volatile memory |
| US7313019B2 (en) | 2004-12-21 | 2007-12-25 | Intel Corporation | Step voltage generation |
| ITVA20050001A1 (it) | 2005-01-18 | 2006-07-19 | St Microelectronics Srl | Controllo delle tensioni durante operazioni di cancellazione e riprogrammazione di celle di matrice di un dispositivo di memoria. |
| DE602005004253T2 (de) | 2005-01-28 | 2009-01-08 | Stmicroelectronics S.R.L., Agrate Brianza | Speicher, bei dem zum Lesen an die Wortleitung eine Spannungs-Rampe angelegt wird, die mit einem Stromgenerator erzeugt wird |
| EP1699054A1 (de) | 2005-03-03 | 2006-09-06 | STMicroelectronics S.r.l. | Speichervorrichtung mit rampenartiger Vorspannungsanordnung und reduzierter Anzahl von Referenzzellen |
| EP1699055B1 (de) * | 2005-03-03 | 2010-01-06 | STMicroelectronics S.r.l. | Speichervorrichtung mit auf Zeitverschiebung basierender Referenzzellenemulation |
| JP2007012180A (ja) * | 2005-06-30 | 2007-01-18 | Renesas Technology Corp | 半導体記憶装置 |
| KR100942870B1 (ko) | 2005-07-04 | 2010-02-17 | 마이크론 테크놀로지, 인크. | 저전력 다중 비트 감지 증폭기 |
| ITRM20050353A1 (it) | 2005-07-04 | 2007-01-05 | Micron Technology Inc | Amplificatore di rilevazione di piu' bit a bassa potenza. |
| ITMI20051628A1 (it) | 2005-09-02 | 2007-03-03 | St Microelectronics Srl | Architettura di meoria con lettura a rampa di tensione |
| WO2007076414A2 (en) * | 2005-12-28 | 2007-07-05 | Sandisk Corporation | Reference sense amplifier and method for compensated sensing in non-volatile memory |
| US7551489B2 (en) | 2005-12-28 | 2009-06-23 | Intel Corporation | Multi-level memory cell sensing |
| ITMI20060350A1 (it) | 2006-02-28 | 2007-09-01 | St Microelectronics Srl | Amplificatore di lettura con ridotta occupazione d'area per memorie a semiconduttore |
| ITMI20060536A1 (it) | 2006-03-23 | 2007-09-24 | St Microelectronics Srl | Amplificatore di lettura con ridotto consumo di corrente per memorie a semiconduttore |
| EP1843356A1 (de) * | 2006-04-03 | 2007-10-10 | STMicroelectronics S.r.l. | Verfahren und System zur Aktualisierung einer Speichervorrichtung während ihres Lesens |
| US7944760B2 (en) | 2006-11-08 | 2011-05-17 | Nxp B.V. | Read enhancement for memory |
| US7532515B2 (en) | 2007-05-14 | 2009-05-12 | Intel Corporation | Voltage reference generator using big flash cell |
| WO2008140171A1 (en) * | 2007-05-14 | 2008-11-20 | Samsung Electronics Co., Ltd. | Apparatus for reading data and method using the same |
| US7463514B1 (en) * | 2007-06-21 | 2008-12-09 | Intel Corporation | Multi-level cell serial-parallel sense scheme for non-volatile flash memory |
| US7948802B2 (en) | 2007-12-04 | 2011-05-24 | Micron Technology, Inc. | Sensing memory cells |
| US7778098B2 (en) * | 2007-12-31 | 2010-08-17 | Cypress Semiconductor Corporation | Dummy cell for memory circuits |
| US8027187B2 (en) * | 2008-09-12 | 2011-09-27 | Micron Technology, Inc. | Memory sensing devices, methods, and systems |
| EP2293524A1 (de) | 2009-09-07 | 2011-03-09 | Nxp B.V. | Einstellung einer Medienstromübertragung sowie Server und Client für Medienstromübertragung |
| US8625345B2 (en) | 2011-07-27 | 2014-01-07 | Micron Technology, Inc. | Determining and transferring data from a memory array |
| US9754639B2 (en) | 2015-10-30 | 2017-09-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory device and reference circuit thereof |
| US10153022B1 (en) | 2017-06-09 | 2018-12-11 | Micron Technology, Inc | Time-based access of a memory cell |
| US10153021B1 (en) | 2017-06-09 | 2018-12-11 | Micron Technology, Inc. | Time-based access of a memory cell |
| US10431301B2 (en) | 2017-12-22 | 2019-10-01 | Micron Technology, Inc. | Auto-referenced memory cell read techniques |
| US10566052B2 (en) | 2017-12-22 | 2020-02-18 | Micron Technology, Inc. | Auto-referenced memory cell read techniques |
| US10607664B2 (en) | 2018-03-22 | 2020-03-31 | Micron Technology, Inc. | Sub-threshold voltage leakage current tracking |
| US10424372B1 (en) * | 2018-04-19 | 2019-09-24 | Micron Technology, Inc. | Apparatuses and methods for sensing memory cells |
| US10796755B2 (en) | 2018-04-19 | 2020-10-06 | Micron Technology, Inc. | Permutation coding for improved memory cell operations |
| US11238906B2 (en) | 2020-06-15 | 2022-02-01 | Taiwan Semiconductor Manufacturing Company Limited | Series of parallel sensing operations for multi-level cells |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6480A (en) * | 1849-05-29 | Charles perley | ||
| JP3205658B2 (ja) * | 1993-12-28 | 2001-09-04 | 新日本製鐵株式会社 | 半導体記憶装置の読み出し方法 |
| US5629890A (en) * | 1994-09-14 | 1997-05-13 | Information Storage Devices, Inc. | Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method |
| US5508958A (en) * | 1994-09-29 | 1996-04-16 | Intel Corporation | Method and apparatus for sensing the state of floating gate memory cells by applying a variable gate voltage |
| US5596532A (en) * | 1995-10-18 | 1997-01-21 | Sandisk Corporation | Flash EEPROM self-adaptive voltage generation circuit operative within a continuous voltage source range |
| KR100282707B1 (ko) * | 1997-12-29 | 2001-02-15 | 윤종용 | 멀티-비트 데이터를 저장하는 반도체 메모리 장치 (semiconductor memory device for storing a multi-bit data) |
| US6038166A (en) * | 1998-04-01 | 2000-03-14 | Invox Technology | High resolution multi-bit-per-cell memory |
| US6157572A (en) * | 1998-05-27 | 2000-12-05 | Advanced Micro Devices | Method for erasing flash electrically erasable programmable read-only memory (EEPROM) |
| US5936906A (en) * | 1998-10-29 | 1999-08-10 | Winbond Electronics Corp. | Multilevel sense device for a flash memory |
| US7015964B1 (en) | 1998-11-02 | 2006-03-21 | Canon Kabushiki Kaisha | Solid-state image pickup device and method of resetting the same |
| EP1028433B1 (de) * | 1999-02-10 | 2004-04-28 | SGS-THOMSON MICROELECTRONICS s.r.l. | Nichtflüchtiger Mehrpegelspeicher und Leseverfahren dafür |
| JP3783152B2 (ja) * | 1999-08-16 | 2006-06-07 | Necエレクトロニクス株式会社 | 多値不揮発性半導体メモリ |
| WO2001027931A1 (en) * | 1999-10-08 | 2001-04-19 | Aplus Flash Technology, Inc. | Multiple level flash memory |
| JP3555076B2 (ja) * | 1999-12-28 | 2004-08-18 | Necエレクトロニクス株式会社 | 多値記憶半導体記憶装置の読み出し回路 |
-
2003
- 2003-04-10 EP EP03425224A patent/EP1467377B1/de not_active Expired - Lifetime
- 2003-04-10 DE DE60317768T patent/DE60317768T2/de not_active Expired - Lifetime
-
2004
- 2004-04-08 US US10/820,458 patent/US7054197B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE60317768T2 (de) | 2008-11-27 |
| US20040257876A1 (en) | 2004-12-23 |
| EP1467377A1 (de) | 2004-10-13 |
| EP1467377B1 (de) | 2007-11-28 |
| US7054197B2 (en) | 2006-05-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |