ITMI20060350A1 - Amplificatore di lettura con ridotta occupazione d'area per memorie a semiconduttore - Google Patents
Amplificatore di lettura con ridotta occupazione d'area per memorie a semiconduttoreInfo
- Publication number
- ITMI20060350A1 ITMI20060350A1 IT000350A ITMI20060350A ITMI20060350A1 IT MI20060350 A1 ITMI20060350 A1 IT MI20060350A1 IT 000350 A IT000350 A IT 000350A IT MI20060350 A ITMI20060350 A IT MI20060350A IT MI20060350 A1 ITMI20060350 A1 IT MI20060350A1
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor memories
- reduced area
- reading amplifier
- employment
- area employment
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/06—Sense amplifier related aspects
- G11C2207/063—Current sense amplifiers
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000350A ITMI20060350A1 (it) | 2006-02-28 | 2006-02-28 | Amplificatore di lettura con ridotta occupazione d'area per memorie a semiconduttore |
| US11/713,067 US7843738B2 (en) | 2006-02-28 | 2007-02-28 | Sense amplifier with reduced area occupation for semiconductor memories |
| US12/911,575 US8254194B2 (en) | 2006-02-28 | 2010-10-25 | Sense amplifier with reduced area occupation for semiconductor memories |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000350A ITMI20060350A1 (it) | 2006-02-28 | 2006-02-28 | Amplificatore di lettura con ridotta occupazione d'area per memorie a semiconduttore |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ITMI20060350A1 true ITMI20060350A1 (it) | 2007-09-01 |
Family
ID=38949095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT000350A ITMI20060350A1 (it) | 2006-02-28 | 2006-02-28 | Amplificatore di lettura con ridotta occupazione d'area per memorie a semiconduttore |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US7843738B2 (it) |
| IT (1) | ITMI20060350A1 (it) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITMI20060536A1 (it) * | 2006-03-23 | 2007-09-24 | St Microelectronics Srl | Amplificatore di lettura con ridotto consumo di corrente per memorie a semiconduttore |
| KR101105434B1 (ko) * | 2009-03-02 | 2012-01-17 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 전류 감지 특성 평가 장치 및 방법 |
| CN102185569B (zh) * | 2011-04-07 | 2017-07-07 | 北京中星微电子有限公司 | 一种d类放大器的输出级电路 |
| US8593876B2 (en) | 2011-04-13 | 2013-11-26 | Micron Technology, Inc. | Sensing scheme in a memory device |
| US8994406B2 (en) * | 2011-12-19 | 2015-03-31 | Nanyang Technological University | Digital cell |
| US10762953B2 (en) | 2018-12-13 | 2020-09-01 | International Business Machines Corporation | Memory array with reduced circuitry |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6044019A (en) * | 1998-10-23 | 2000-03-28 | Sandisk Corporation | Non-volatile memory with improved sensing and method therefor |
| US6625057B2 (en) * | 2000-11-17 | 2003-09-23 | Kabushiki Kaisha Toshiba | Magnetoresistive memory device |
| US6717449B2 (en) * | 2001-10-23 | 2004-04-06 | Olympus Corporation | Variable resistance circuit and application circuits using the variable resistance circuit |
| US6775178B2 (en) * | 2002-04-04 | 2004-08-10 | Honeywell International Inc. | SEU resistant SRAM using feedback MOSFET |
| ITTO20030121A1 (it) * | 2003-02-18 | 2004-08-19 | St Microelectronics Srl | Amplificatore di lettura di celle di memoria non volatili a |
| JP2004258946A (ja) * | 2003-02-26 | 2004-09-16 | Renesas Technology Corp | メモリカード |
| DE60317768T2 (de) | 2003-04-10 | 2008-11-27 | Stmicroelectronics S.R.L., Agrate Brianza | Verfahren zum Auslesen einer nichtflüchtigen Speichervorrichtung und zugehörige Vorrichtung |
| ITMI20031619A1 (it) * | 2003-08-06 | 2005-02-07 | St Microelectronics Srl | Amplificatore di rilevamento perfezionato. |
| EP1505605A1 (en) | 2003-08-06 | 2005-02-09 | STMicroelectronics S.r.l. | Improved sensing circuit for a semiconductor memory including bit line precharging and discharging functions |
| NO324029B1 (no) * | 2004-09-23 | 2007-07-30 | Thin Film Electronics Asa | Lesemetode og deteksjonsanordning |
-
2006
- 2006-02-28 IT IT000350A patent/ITMI20060350A1/it unknown
-
2007
- 2007-02-28 US US11/713,067 patent/US7843738B2/en not_active Expired - Fee Related
-
2010
- 2010-10-25 US US12/911,575 patent/US8254194B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US7843738B2 (en) | 2010-11-30 |
| US20110110169A1 (en) | 2011-05-12 |
| US20080013381A1 (en) | 2008-01-17 |
| US8254194B2 (en) | 2012-08-28 |
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