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DE60227304D1 - Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung - Google Patents

Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung

Info

Publication number
DE60227304D1
DE60227304D1 DE60227304T DE60227304T DE60227304D1 DE 60227304 D1 DE60227304 D1 DE 60227304D1 DE 60227304 T DE60227304 T DE 60227304T DE 60227304 T DE60227304 T DE 60227304T DE 60227304 D1 DE60227304 D1 DE 60227304D1
Authority
DE
Germany
Prior art keywords
making
projection apparatus
lithographic projection
lithographic
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60227304T
Other languages
English (en)
Inventor
Norbertus Benedictus Koster
Bastiaan Matthias Mertens
Martinus Hendrikus An Leenders
Vladimir Vital Evitch Ivanov
Konstantin Nikolaevit Koshelev
Vadim Yevgenyevich Banine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Application granted granted Critical
Publication of DE60227304D1 publication Critical patent/DE60227304D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10P76/00—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electrostatic Separation (AREA)
  • Electron Sources, Ion Sources (AREA)
DE60227304T 2001-01-10 2002-01-08 Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung Expired - Lifetime DE60227304D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01300167 2001-01-10

Publications (1)

Publication Number Publication Date
DE60227304D1 true DE60227304D1 (de) 2008-08-14

Family

ID=8181635

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60227304T Expired - Lifetime DE60227304D1 (de) 2001-01-10 2002-01-08 Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung

Country Status (4)

Country Link
US (2) US6614505B2 (de)
JP (1) JP3696163B2 (de)
KR (1) KR100666746B1 (de)
DE (1) DE60227304D1 (de)

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US6906788B2 (en) * 2002-11-22 2005-06-14 Asml Netherlands B.V. Lithographic projection apparatus with multiple suppression meshes
EP1422570A3 (de) * 2002-11-22 2006-06-14 ASML Netherlands B.V. Lithographischer Projektionsapparat mit mehreren Unterdrückungsnetzen
DE60323927D1 (de) * 2002-12-13 2008-11-20 Asml Netherlands Bv Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
KR100737759B1 (ko) * 2002-12-20 2007-07-10 에이에스엠엘 네델란즈 비.브이. 리소그래피 투영장치의 구성요소의 표면을 세정하는 방법, 리소그래피 투영장치, 디바이스 제조방법, 및 세정장치
TWI255394B (en) * 2002-12-23 2006-05-21 Asml Netherlands Bv Lithographic apparatus with debris suppression means and device manufacturing method
US6919573B2 (en) * 2003-03-20 2005-07-19 Asml Holding N.V Method and apparatus for recycling gases used in a lithography tool
SG118268A1 (en) * 2003-06-27 2006-01-27 Asml Netherlands Bv Laser produced plasma radiation system with foil trap
SG112034A1 (en) * 2003-11-06 2005-06-29 Asml Netherlands Bv Optical element, lithographic apparatus comprising such optical element and device manufacturing method
TWI282488B (en) * 2003-11-11 2007-06-11 Asml Netherlands Bv Lithographic apparatus with contamination suppression, device manufacturing method, and device manufactured thereby
US7135692B2 (en) * 2003-12-04 2006-11-14 Asml Netherlands B.V. Lithographic apparatus, illumination system and method for providing a projection beam of EUV radiation
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
US8173975B2 (en) * 2004-03-31 2012-05-08 Koninklijke Philips Electronics N.V. Method and device for removing particles generated by means of a radiation source during generation of short-wave radiation
US6972420B2 (en) * 2004-04-28 2005-12-06 Intel Corporation Atomic beam to protect a reticle
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US7199384B2 (en) * 2004-07-09 2007-04-03 Energetiq Technology Inc. Inductively-driven light source for lithography
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US7307375B2 (en) * 2004-07-09 2007-12-11 Energetiq Technology Inc. Inductively-driven plasma light source
US7183717B2 (en) * 2004-07-09 2007-02-27 Energetiq Technology Inc. Inductively-driven light source for microscopy
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US7355672B2 (en) * 2004-10-04 2008-04-08 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
US7405804B2 (en) * 2004-10-06 2008-07-29 Asml Netherlands B.V. Lithographic apparatus with enhanced spectral purity, device manufacturing method and device manufactured thereby
US7361911B2 (en) * 2004-12-09 2008-04-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7145631B2 (en) * 2004-12-27 2006-12-05 Asml Netherlands B.V. Lithographic apparatus, illumination system and method for mitigating debris particles
US7145132B2 (en) * 2004-12-27 2006-12-05 Asml Netherlands B.V. Lithographic apparatus, illumination system and debris trapping system
US7193229B2 (en) * 2004-12-28 2007-03-20 Asml Netherlands B.V. Lithographic apparatus, illumination system and method for mitigating debris particles
US7250620B2 (en) * 2005-01-20 2007-07-31 Infineon Technologies Ag EUV lithography filter
SG124407A1 (en) * 2005-02-03 2006-08-30 Asml Netherlands Bv Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus
US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7279690B2 (en) * 2005-03-31 2007-10-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7528386B2 (en) * 2005-04-21 2009-05-05 Board Of Trustees Of University Of Illinois Submicron particle removal
US7336416B2 (en) * 2005-04-27 2008-02-26 Asml Netherlands B.V. Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method
DE102005044141B4 (de) * 2005-09-15 2008-08-14 Qimonda Ag Belichtungsgerät und Verfahren zum Betrieb eines Belichtungsgeräts
JP2009510698A (ja) * 2005-09-30 2009-03-12 エナジェティック・テクノロジー・インコーポレーテッド 誘導駆動型プラズマ光源
US7736820B2 (en) * 2006-05-05 2010-06-15 Asml Netherlands B.V. Anti-reflection coating for an EUV mask
US7714306B2 (en) * 2006-08-30 2010-05-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7624617B2 (en) * 2006-11-21 2009-12-01 Asml Netherlands B.V. Gas analyzing system, lithographic apparatus and method of improving a sensitivity of a gas analyzing system
DE102006054726B4 (de) * 2006-11-21 2014-09-11 Asml Netherlands B.V. Verfahren zum Entfernen von Kontaminationen auf optischen Oberflächen und optische Anordnung
JP2009032776A (ja) * 2007-07-25 2009-02-12 Ushio Inc 極端紫外光光源装置及び極端紫外光光源装置における高速粒子の捕捉方法
TWI402628B (zh) * 2007-08-31 2013-07-21 Cymer Inc 控管極遠紫外線（ｅｕｖ）光微影裝置腔室間之氣體流動的系統
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US7655925B2 (en) * 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
JP2009070982A (ja) * 2007-09-12 2009-04-02 Nikon Corp 飛散粒子除去装置、飛散粒子の低減方法、光源装置、照明光学装置、露光装置及び電子デバイスの製造方法
NL1035979A1 (nl) * 2007-09-27 2009-03-30 Asml Netherlands Bv Spectral filter, lithographic apparatus including such a spectral filter, device manufacturing method, and device manufactured thereby.
JP5380530B2 (ja) 2008-06-30 2014-01-08 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置のキャップされていない多層ミラー上の沈着を除去する方法、リソグラフィ装置およびデバイス製造方法
EP2157584A3 (de) 2008-08-14 2011-07-13 ASML Netherlands B.V. Strahlungsquelle, Lithografiegerät und Herstellungsverfahren für ein Bauteil
JP5732392B2 (ja) * 2008-08-14 2015-06-10 エーエスエムエル ネザーランズ ビー．ブイ． 放射源およびリソグラフィ装置
EP2161725B1 (de) 2008-09-04 2015-07-08 ASML Netherlands B.V. Strahlungsquelle und entsprechendes Verfahren
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CN102576194A (zh) 2009-09-23 2012-07-11 Asml荷兰有限公司 光谱纯度滤光片、光刻设备以及器件制造方法
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JP5758153B2 (ja) * 2010-03-12 2015-08-05 エーエスエムエル ネザーランズ ビー．ブイ． 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法
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JP2013535806A (ja) 2010-07-06 2013-09-12 エーエスエムエル ネザーランズ ビー．ブイ． Ｅｕｖリソグラフィ装置用のコンポーネント、当該コンポーネントを含むｅｕｖリソグラフィ装置、および当該コンポーネントを製造する方法
WO2012084363A1 (en) 2010-12-20 2012-06-28 Asml Netherlands B.V. Method and system for monitoring the integrity of an article, and euv optical apparatus incorporating the same
EP2535770B1 (de) 2011-06-15 2014-01-01 ASML Netherlands B.V. Klemmvorrichtung, Anordnung und lithografische Projektionsvorrichtung
JP5801144B2 (ja) * 2011-08-30 2015-10-28 株式会社東芝 イオン源
US9155180B1 (en) * 2011-10-10 2015-10-06 Kla-Tencor Corporation System and method of simultaneously fueling and mitigating debris for a plasma-based illumination source
US9268031B2 (en) * 2012-04-09 2016-02-23 Kla-Tencor Corporation Advanced debris mitigation of EUV light source
US9265573B2 (en) 2012-07-19 2016-02-23 Covidien Lp Ablation needle including fiber Bragg grating
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EP3637436A1 (de) * 2018-10-12 2020-04-15 ASML Netherlands B.V. Anreicherung und radioisotopproduktion
CN115176202A (zh) 2020-01-23 2022-10-11 Asml控股股份有限公司 配有用于改变颗粒碎片的轨迹的偏转设备的光刻系统
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US20240001375A1 (en) 2020-03-13 2024-01-04 Julian HENLEY Electro-ionic mask devices for improved protection from airborne biopathogens
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Also Published As

Publication number Publication date
US6862075B2 (en) 2005-03-01
US6614505B2 (en) 2003-09-02
KR100666746B1 (ko) 2007-01-09
JP3696163B2 (ja) 2005-09-14
KR20020060587A (ko) 2002-07-18
US20020154279A1 (en) 2002-10-24
US20040032574A1 (en) 2004-02-19
JP2003007611A (ja) 2003-01-10

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