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DE60130065D1 - Elektronisches Bauteil und Halbleitervorrichtung - Google Patents

Elektronisches Bauteil und Halbleitervorrichtung

Info

Publication number
DE60130065D1
DE60130065D1 DE60130065T DE60130065T DE60130065D1 DE 60130065 D1 DE60130065 D1 DE 60130065D1 DE 60130065 T DE60130065 T DE 60130065T DE 60130065 T DE60130065 T DE 60130065T DE 60130065 D1 DE60130065 D1 DE 60130065D1
Authority
DE
Germany
Prior art keywords
semiconductor device
electronic component
electronic
component
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60130065T
Other languages
English (en)
Other versions
DE60130065T2 (de
Inventor
Tasao Soga
Hanae Hata
Tetsuya Nakatsuka
Masato Nakamura
Yuji Fujita
Toshiharu Ishida
Masahide Okamoto
Koji Serizawa
Toshihiro Hachiya
Hideki Kusuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE60130065D1 publication Critical patent/DE60130065D1/de
Publication of DE60130065T2 publication Critical patent/DE60130065T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262Sn as the principal constituent
    • H10W70/60
    • H05K3/346
    • H10W72/30
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • H10W72/07236
    • H10W72/252
    • H10W72/253
    • H10W72/325
    • H10W72/351
    • H10W72/352
    • H10W72/354
    • H10W72/381
    • H10W72/884
    • H10W72/90
    • H10W72/923
    • H10W72/9415
    • H10W72/952
    • H10W74/00
    • H10W74/15
    • H10W90/724
    • H10W90/734
    • H10W90/736
    • H10W90/754
    • H10W90/756
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
DE60130065T 2000-06-12 2001-03-07 Elektronische Vorrichtung und Halbleitervorrichtung Expired - Lifetime DE60130065T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000180714 2000-06-12
JP2000180714 2000-06-12

Publications (2)

Publication Number Publication Date
DE60130065D1 true DE60130065D1 (de) 2007-10-04
DE60130065T2 DE60130065T2 (de) 2008-05-15

Family

ID=18681747

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60130065T Expired - Lifetime DE60130065T2 (de) 2000-06-12 2001-03-07 Elektronische Vorrichtung und Halbleitervorrichtung

Country Status (5)

Country Link
US (2) US6555052B2 (de)
EP (1) EP1163971B1 (de)
KR (1) KR100407448B1 (de)
DE (1) DE60130065T2 (de)
TW (1) TWI228439B (de)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6703707B1 (en) * 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
CN1191747C (zh) * 2001-09-06 2005-03-02 株式会社理光 电子元件组装检查方法
JP2003151726A (ja) * 2001-11-19 2003-05-23 Nec Corp 加温装置、加温装置実装構造および光導波路デバイス
JP2003178661A (ja) * 2001-12-11 2003-06-27 Yazaki Corp リレー素子及びその実装構造
US20030116860A1 (en) * 2001-12-21 2003-06-26 Biju Chandran Semiconductor package with low resistance package-to-die interconnect scheme for reduced die stresses
US7235886B1 (en) 2001-12-21 2007-06-26 Intel Corporation Chip-join process to reduce elongation mismatch between the adherents and semiconductor package made thereby
US7038142B2 (en) * 2002-01-24 2006-05-02 Fujitsu Limited Circuit board and method for fabricating the same, and electronic device
US20040007779A1 (en) * 2002-07-15 2004-01-15 Diane Arbuthnot Wafer-level method for fine-pitch, high aspect ratio chip interconnect
US7061025B2 (en) * 2003-03-10 2006-06-13 Mccolloch Lawrence R Optoelectronic device packaging assemblies and methods of making the same
US20050029675A1 (en) * 2003-03-31 2005-02-10 Fay Hua Tin/indium lead-free solders for low stress chip attachment
US20040187976A1 (en) * 2003-03-31 2004-09-30 Fay Hua Phase change lead-free super plastic solders
JP2005011838A (ja) * 2003-06-16 2005-01-13 Toshiba Corp 半導体装置及びその組立方法
US7193326B2 (en) * 2003-06-23 2007-03-20 Denso Corporation Mold type semiconductor device
US7607560B2 (en) * 2004-05-14 2009-10-27 Intevac, Inc. Semiconductor die attachment for high vacuum tubes
US7012328B2 (en) * 2004-05-14 2006-03-14 Intevac, Inc. Semiconductor die attachment for high vacuum tubes
US20050269385A1 (en) * 2004-06-03 2005-12-08 National Tsing Hua University Soldering method and solder joints formed therein
CN101006362A (zh) * 2004-08-13 2007-07-25 皇家飞利浦电子股份有限公司 固态辐射探测器封装技术
JP2006100552A (ja) * 2004-09-29 2006-04-13 Rohm Co Ltd 配線基板および半導体装置
US7223695B2 (en) * 2004-09-30 2007-05-29 Intel Corporation Methods to deposit metal alloy barrier layers
GB2419137A (en) * 2004-10-15 2006-04-19 Alpha Fry Ltd Solder alloy
DE102005009358B4 (de) * 2005-03-01 2021-02-04 Snaptrack, Inc. Lötfähiger Kontakt und ein Verfahren zur Herstellung
JP4490861B2 (ja) * 2005-04-25 2010-06-30 日立協和エンジニアリング株式会社 基板
US7183652B2 (en) 2005-04-27 2007-02-27 Infineon Technologies Ag Electronic component and electronic configuration
US20070018308A1 (en) * 2005-04-27 2007-01-25 Albert Schott Electronic component and electronic configuration
KR100706574B1 (ko) * 2005-06-29 2007-04-13 삼성전자주식회사 무연 솔더볼을 갖는 반도체 패키지 및 그 제조방법
EP1924393A1 (de) 2005-08-24 2008-05-28 Fry's Metals Inc. Verringerung von gelenkversprödung in bleifreien lötprozessen
US20070090475A1 (en) * 2005-10-05 2007-04-26 Honeywell International Inc. Mems performance improvement using high gravity force conditioning
US7601612B1 (en) * 2005-10-24 2009-10-13 Globalfoundries Inc. Method for forming solder joints for a flip chip assembly
KR100719905B1 (ko) * 2005-12-29 2007-05-18 삼성전자주식회사 Sn-Bi계 솔더 합금 및 이를 이용한 반도체 소자
US20070164428A1 (en) * 2006-01-18 2007-07-19 Alan Elbanhawy High power module with open frame package
JP4790439B2 (ja) * 2006-02-09 2011-10-12 富士通株式会社 電極、電子部品及び基板
US8004075B2 (en) * 2006-04-25 2011-08-23 Hitachi, Ltd. Semiconductor power module including epoxy resin coating
CN100469511C (zh) * 2006-06-14 2009-03-18 浙江亚通焊材有限公司 无铅软钎料
US20080157910A1 (en) * 2006-12-29 2008-07-03 Park Chang-Min Amorphous soft magnetic layer for on-die inductively coupled wires
KR100797161B1 (ko) * 2007-05-25 2008-01-23 한국생산기술연구원 주석-은-구리-인듐의 4원계 무연솔더 조성물
KR20090042556A (ko) * 2007-10-26 2009-04-30 삼성전기주식회사 인쇄회로기판 및 그 제조방법
JP5058766B2 (ja) * 2007-12-07 2012-10-24 山陽特殊製鋼株式会社 鉛フリー接合用材料を用いてはんだ付けしてなる電子機器
JP4899115B2 (ja) * 2008-03-05 2012-03-21 千住金属工業株式会社 鉛フリーはんだ接続構造体およびはんだボール
CN102196881B (zh) * 2008-10-24 2014-06-04 三菱电机株式会社 半导体装置
JP5339968B2 (ja) * 2009-03-04 2013-11-13 パナソニック株式会社 実装構造体及びモータ
US8462510B2 (en) * 2011-05-11 2013-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. Board-level package with tuned mass damping structure
JP2013252548A (ja) * 2012-06-08 2013-12-19 Nihon Almit Co Ltd 微細部品接合用のソルダペースト
US8829692B2 (en) 2012-09-04 2014-09-09 Rolls-Royce Corporation Multilayer packaged semiconductor device and method of packaging
TWM521008U (zh) * 2016-01-27 2016-05-01 Lite On Technology Corp 車燈裝置及其發光模組
CN108886353B (zh) * 2016-04-11 2022-03-22 株式会社村田制作所 弹性波元件以及弹性波装置
US10957667B2 (en) * 2016-10-01 2021-03-23 Intel Corporation Indium solder metallurgy to control electro-migration
DE102020116018A1 (de) 2020-06-17 2021-12-23 Tdk Electronics Ag Sensor
CN112117205B (zh) * 2020-09-15 2024-01-16 桂林航天工业学院 一种锡基钎料封装焊点的制备方法
JP2022129553A (ja) * 2021-02-25 2022-09-06 セイコーエプソン株式会社 センサーモジュール
CN115319221A (zh) * 2022-07-26 2022-11-11 云南电网有限责任公司昆明供电局 一种基于Sn基材料的电缆线芯接头钎焊方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3097965A (en) 1961-06-27 1963-07-16 Richard A Wilkins Conductive wire coating alloys, wires coated therewith and process for improving solderability therefor
US6184475B1 (en) * 1994-09-29 2001-02-06 Fujitsu Limited Lead-free solder composition with Bi, In and Sn
JP2805595B2 (ja) 1994-11-02 1998-09-30 三井金属鉱業株式会社 鉛無含有半田合金
JP3040929B2 (ja) 1995-02-06 2000-05-15 松下電器産業株式会社 はんだ材料
WO1997009455A1 (en) * 1995-09-01 1997-03-13 Sarnoff Corporation Soldering composition
JP3874031B2 (ja) * 1995-11-29 2007-01-31 内橋エステック株式会社 無鉛はんだ合金
US6224690B1 (en) * 1995-12-22 2001-05-01 International Business Machines Corporation Flip-Chip interconnections using lead-free solders
US6046499A (en) * 1996-03-27 2000-04-04 Kabushiki Kaisha Toshiba Heat transfer configuration for a semiconductor device
JPH09326554A (ja) 1996-06-06 1997-12-16 Matsushita Electric Ind Co Ltd 電子部品接合用電極のはんだ合金及びはんだ付け方法
US5854514A (en) * 1996-08-05 1998-12-29 International Buisness Machines Corporation Lead-free interconnection for electronic devices
US5985212A (en) * 1996-12-12 1999-11-16 H-Technologies Group, Incorporated High strength lead-free solder materials
JP3736819B2 (ja) * 1997-01-17 2006-01-18 株式会社豊田中央研究所 無鉛はんだ合金
JPH10314980A (ja) * 1997-05-14 1998-12-02 Sony Corp はんだ材料
US6402013B2 (en) * 1999-12-03 2002-06-11 Senju Metal Industry Co., Ltd Thermosetting soldering flux and soldering process
KR100398716B1 (ko) * 2000-06-12 2003-09-19 가부시키가이샤 히타치세이사쿠쇼 반도체 모듈 및 반도체 장치를 접속한 회로 기판
JP3350026B2 (ja) * 2000-08-01 2002-11-25 エフシーエム株式会社 電子部品用材料、電子部品用材料の接続方法、ボールグリッドアレイ型電子部品およびボールグリッドアレイ型電子部品の接続方法

Also Published As

Publication number Publication date
DE60130065T2 (de) 2008-05-15
US20030186072A1 (en) 2003-10-02
EP1163971A1 (de) 2001-12-19
US6774490B2 (en) 2004-08-10
EP1163971B1 (de) 2007-08-22
US6555052B2 (en) 2003-04-29
KR100407448B1 (ko) 2003-11-28
TWI228439B (en) 2005-03-01
US20020066583A1 (en) 2002-06-06
KR20010112054A (ko) 2001-12-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition