DE60042914D1 - Halbleitervorrichtung und verfahren zu ihrer herstellung - Google Patents

Halbleitervorrichtung und verfahren zu ihrer herstellung

Info

Publication number: DE60042914D1
Authority: DE; Germany
Prior art keywords: production; semiconductor device; semiconductor
Prior art date: 1999-06-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE60042914T

Other languages

English (en)

Inventor

Masatoshi Inaba

Takanao Suzuki

Tadanori Ominato

Masahiro Kaizu

Akihito Kurosaka

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujikura Ltd

Original Assignee

Fujikura Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-06-11

Filing date

2000-06-12

Publication date

2009-10-22

2000-06-12 Application filed by Fujikura Ltd filed Critical Fujikura Ltd

2009-10-22 Application granted granted Critical

2009-10-22 Publication of DE60042914D1 publication Critical patent/DE60042914D1/de

2020-06-13 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H10W74/129—
- H10W72/20—
- H10W70/05—
- H10W72/01225—
- H10W72/251—
- H10W72/29—
- H10W72/931—
- H10W72/934—

DE60042914T 1999-06-11 2000-06-12 Halbleitervorrichtung und verfahren zu ihrer herstellung Expired - Lifetime DE60042914D1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP16609099		1999-06-11
PCT/JP2000/003804 WO2000077843A1 (fr)	1999-06-11	2000-06-12	Boitier a semi-conducteur, dispositif semi-conducteur, dispositif electronique et procede de fabrication de boitier a semi-conducteur

Publications (1)

Publication Number	Publication Date
DE60042914D1 true DE60042914D1 (de)	2009-10-22

Family

ID=15824818

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE60042914T Expired - Lifetime DE60042914D1 (de)	1999-06-11	2000-06-12	Halbleitervorrichtung und verfahren zu ihrer herstellung

Country Status (7)

Country	Link
US (1)	US6387734B1 (de)
EP (1)	EP1107306B1 (de)
JP (1)	JP3651596B2 (de)
AU (1)	AU5109000A (de)
CA (1)	CA2340108C (de)
DE (1)	DE60042914D1 (de)
WO (1)	WO2000077843A1 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6936531B2 (en) *	1998-12-21	2005-08-30	Megic Corporation	Process of fabricating a chip structure
US8021976B2 (en)	2002-10-15	2011-09-20	Megica Corporation	Method of wire bonding over active area of a semiconductor circuit
DE60022458T2 (de) *	1999-06-15	2006-06-22	Fujikura Ltd.	Halbleitergehäuse, halbleitervorrichtung, elektronikelement und herstellung eines halbleitergehäuses
JP3548082B2 (ja) *	2000-03-30	2004-07-28	三洋電機株式会社	半導体装置及びその製造方法
US7034402B1 (en) *	2000-06-28	2006-04-25	Intel Corporation	Device with segmented ball limiting metallurgy
JP2002050716A (ja) *	2000-08-02	2002-02-15	Dainippon Printing Co Ltd	半導体装置及びその作製方法
US6818545B2 (en) *	2001-03-05	2004-11-16	Megic Corporation	Low fabrication cost, fine pitch and high reliability solder bump
JP4892791B2 (ja) *	2001-05-31	2012-03-07	大日本印刷株式会社	マルチチップモジュール用の中間基板
TW508987B (en) *	2001-07-27	2002-11-01	Phoenix Prec Technology Corp	Method of forming electroplated solder on organic printed circuit board
US6646347B2 (en) *	2001-11-30	2003-11-11	Motorola, Inc.	Semiconductor power device and method of formation
US7932603B2 (en) *	2001-12-13	2011-04-26	Megica Corporation	Chip structure and process for forming the same
TW200302685A (en) *	2002-01-23	2003-08-01	Matsushita Electric Industrial Co Ltd	Circuit component built-in module and method of manufacturing the same
JP3542350B2 (ja)	2002-05-31	2004-07-14	沖電気工業株式会社	半導体装置及びその製造方法
US6897566B2 (en) *	2002-06-24	2005-05-24	Ultra Tera Corporation	Encapsulated semiconductor package free of chip carrier
JP2004055628A (ja) *	2002-07-17	2004-02-19	Dainippon Printing Co Ltd	ウエハレベルの半導体装置及びその作製方法
US7265045B2 (en) *	2002-10-24	2007-09-04	Megica Corporation	Method for fabricating thermal compliant semiconductor chip wiring structure for chip scale packaging
KR100629764B1 (ko) *	2002-10-25	2006-09-28	마쯔시다덴기산교 가부시키가이샤	반도체 디바이스 및 반도체 디바이스를 조립하기 위한수지 바인더
JP3969295B2 (ja)	2002-12-02	2007-09-05	セイコーエプソン株式会社	半導体装置及びその製造方法と回路基板及び電気光学装置、並びに電子機器
US7180195B2 (en) *	2003-12-17	2007-02-20	Intel Corporation	Method and apparatus for improved power routing
JP4741201B2 (ja) *	2004-06-02	2011-08-03	株式会社フジクラ	半導体装置及びそれを備えた電子機器並びに半導体装置の製造方法
US7468545B2 (en) *	2005-05-06	2008-12-23	Megica Corporation	Post passivation structure for a semiconductor device and packaging process for same
US7582556B2 (en)	2005-06-24	2009-09-01	Megica Corporation	Circuitry component and method for forming the same
US7582966B2 (en)	2006-09-06	2009-09-01	Megica Corporation	Semiconductor chip and method for fabricating the same
JP4486103B2 (ja)	2007-03-19	2010-06-23	Ｏｋｉセミコンダクタ株式会社	加速度センサ、及び加速度センサの製造方法
JP5249080B2 (ja) *	2009-02-19	2013-07-31	セイコーインスツル株式会社	半導体装置
JP5563777B2 (ja) *	2009-03-19	2014-07-30	パナソニック株式会社	半導体装置および半導体基板、並びに半導体装置の製造方法
TWI395279B (zh) *	2009-12-30	2013-05-01	財團法人工業技術研究院	微凸塊結構
JP2011176011A (ja) *	2010-02-23	2011-09-08	Panasonic Corp	半導体集積回路装置
EP2405468A1 (de) *	2010-07-05	2012-01-11	ATOTECH Deutschland GmbH	Verfahren zur Formung von Lötablagerungen auf Substraten
US8409979B2 (en) *	2011-05-31	2013-04-02	Stats Chippac, Ltd.	Semiconductor device and method of forming interconnect structure with conductive pads having expanded interconnect surface area for enhanced interconnection properties
US8624392B2 (en)	2011-06-03	2014-01-07	Taiwan Semiconductor Manufacturing Company, Ltd.	Electrical connection for chip scale packaging
US8912668B2 (en) *	2012-03-01	2014-12-16	Taiwan Semiconductor Manufacturing Company, Ltd.	Electrical connections for chip scale packaging
US9548281B2 (en) *	2011-10-07	2017-01-17	Taiwan Semiconductor Manufacturing Company, Ltd.	Electrical connection for chip scale packaging
US9196573B2 (en)	2012-07-31	2015-11-24	Taiwan Semiconductor Manufacturing Company, Ltd.	Bump on pad (BOP) bonding structure
US8829673B2 (en)	2012-08-17	2014-09-09	Taiwan Semiconductor Manufacturing Company, Ltd.	Bonded structures for package and substrate
US9673161B2 (en)	2012-08-17	2017-06-06	Taiwan Semiconductor Manufacturing Company, Ltd.	Bonded structures for package and substrate
US9620468B2 (en) *	2012-11-08	2017-04-11	Tongfu Microelectronics Co., Ltd.	Semiconductor packaging structure and method for forming the same
US9761549B2 (en) *	2012-11-08	2017-09-12	Tongfu Microelectronics Co., Ltd.	Semiconductor device and fabrication method
US9437574B2 (en)	2013-09-30	2016-09-06	Freescale Semiconductor, Inc.	Electronic component package and method for forming same
US20150123267A1 (en) *	2013-11-06	2015-05-07	Taiwan Semiconductor Manufacturing Company Ltd.	Packaged semiconductor device
US9515034B2 (en) *	2014-01-03	2016-12-06	Freescale Semiconductor, Inc.	Bond pad having a trench and method for forming
US9484318B2 (en) *	2014-02-17	2016-11-01	Taiwan Semiconductor Manufacturing Company Ltd.	Semiconductor device and manufacturing method thereof
KR102493465B1 (ko) *	2016-03-22	2023-01-30	삼성전자 주식회사	인쇄회로기판 및 이를 가지는 반도체 패키지
KR102017635B1 (ko) *	2016-03-25	2019-10-08	삼성전자주식회사	팬-아웃 반도체 패키지
US10818621B2 (en) *	2016-03-25	2020-10-27	Samsung Electronics Co., Ltd.	Fan-out semiconductor package
US10600748B2 (en)	2016-06-20	2020-03-24	Samsung Electronics Co., Ltd.	Fan-out semiconductor package
JP6708015B2 (ja)	2016-06-27	2020-06-10	セイコーエプソン株式会社	Ｍｅｍｓデバイス、液体噴射ヘッド、液体噴射装置、および、ｍｅｍｓデバイスの製造方法
KR102073294B1 (ko) *	2016-09-29	2020-02-04	삼성전자주식회사	팬-아웃 반도체 패키지
CN107104058A (zh) *	2017-06-21	2017-08-29	中芯长电半导体（江阴）有限公司	扇出型单裸片封装结构及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5248903A (en) *	1992-09-18	1993-09-28	Lsi Logic Corporation	Composite bond pads for semiconductor devices
US5527741A (en) *	1994-10-11	1996-06-18	Martin Marietta Corporation	Fabrication and structures of circuit modules with flexible interconnect layers
TW448524B (en) *	1997-01-17	2001-08-01	Seiko Epson Corp	Electronic component, semiconductor device, manufacturing method therefor, circuit board and electronic equipment
JP2000228423A (ja)	1999-02-05	2000-08-15	Sanyo Electric Co Ltd	半導体装置及びその製造方法

1999
- 1999-06-12 US US09/762,681 patent/US6387734B1/en not_active Expired - Lifetime
2000
- 2000-06-12 WO PCT/JP2000/003804 patent/WO2000077843A1/ja not_active Ceased
- 2000-06-12 JP JP2001503222A patent/JP3651596B2/ja not_active Expired - Fee Related
- 2000-06-12 EP EP00935648A patent/EP1107306B1/de not_active Expired - Lifetime
- 2000-06-12 AU AU51090/00A patent/AU5109000A/en not_active Abandoned
- 2000-06-12 DE DE60042914T patent/DE60042914D1/de not_active Expired - Lifetime
- 2000-06-12 CA CA002340108A patent/CA2340108C/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JP3651596B2 (ja)	2005-05-25
EP1107306B1 (de)	2009-09-09
EP1107306A1 (de)	2001-06-13
EP1107306A4 (de)	2008-02-27
WO2000077843A1 (fr)	2000-12-21
CA2340108C (en)	2005-03-29
CA2340108A1 (en)	2000-12-21
US6387734B1 (en)	2002-05-14
AU5109000A (en)	2001-01-02

Publication	Publication Date	Title
DE60042914D1 (de)	2009-10-22	Halbleitervorrichtung und verfahren zu ihrer herstellung
DE60113215D1 (de)	2005-10-13	Halbleitervorrichtung und Verfahren zu dessen Herstellung
DE60042666D1 (de)	2009-09-17	Halbleiterbauelement und Verfahren zu dessen Herstellung
DE60141211D1 (de)	2010-03-18	Polysilizium-halbleiterbauteil und verfahren zu dessen herstellung
DE60038216D1 (de)	2008-04-17	Lichtemittierende Halbleitervorrichtung und Verfahren zu deren Herstellung
DE60031949D1 (de)	2007-01-04	Leiterplatte und verfahren zu ihrer herstellung
DE60233058D1 (de)	2009-09-03	Silsesquioxanderivate und verfahren zu ihrer herstellung
DE69929311D1 (de)	2006-03-30	Oximanderivate und verfahren zu ihrer herstellung
DE69922815D1 (de)	2005-01-27	Gipsplatte und verfahren zu ihrer herstellung
DE69941879D1 (de)	2010-02-11	Feldeffekt-halbleiterbauelement und verfahren zu dessen herstellung
DE60027698D1 (de)	2006-06-08	Lasttragendes osteoimplantat und verfahren zu seiner herstellung
DE60131745D1 (de)	2008-01-17	Filtervorrichtung und verfahren zu deren herstellung
DE59806872D1 (de)	2003-02-13	Leistungshalbleiter-bauelement und verfahren zu dessen herstellung
DE60133303D1 (de)	2008-04-30	Halbleitergrundmaterial und verfahren zu seiner herstellung
DE69532907D1 (de)	2004-05-27	Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE60044221D1 (de)	2010-06-02	Lumineszierendes Halbleiterelement und Verfahren zu dessen Herstellung
DE60115902D1 (de)	2006-01-19	Osteoimplantat und verfahren zu seiner herstellung
DE69932361D1 (de)	2006-08-24	Trennschicht und verfahren zu deren herstellung
DE60125888D1 (de)	2007-02-22	Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE60024801D1 (de)	2006-01-19	Polyurethanharnstofffasern und verfahren zu ihrer herstellung
DE60135206D1 (de)	2008-09-18	Röntgenabbildungseinrichtung und verfahren zu ihrer herstellung
DE69634764D1 (de)	2005-06-30	Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE60230486D1 (de)	2009-02-05	Display-vorrichtung und verfahren zu ihrer herstellung
DE69918466D1 (de)	2004-08-05	Beleuchtungsvorrichtung und verfahren zu ihrer herstellung
DE60116486D1 (de)	2006-03-30	Gallengangstent und verfahren zu seiner herstellung

Legal Events

Date	Code	Title	Description
2010-09-30	8364	No opposition during term of opposition