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DE60042666D1 - Halbleiterbauelement und Verfahren zu dessen Herstellung - Google Patents

Halbleiterbauelement und Verfahren zu dessen Herstellung

Info

Publication number
DE60042666D1
DE60042666D1 DE60042666T DE60042666T DE60042666D1 DE 60042666 D1 DE60042666 D1 DE 60042666D1 DE 60042666 T DE60042666 T DE 60042666T DE 60042666 T DE60042666 T DE 60042666T DE 60042666 D1 DE60042666 D1 DE 60042666D1
Authority
DE
Germany
Prior art keywords
production
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60042666T
Other languages
English (en)
Inventor
Koichiro Yuki
Tohru Saitoh
Minoru Kubo
Kiyoshi Ohnaka
Akira Asai
Koji Katayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Application granted granted Critical
Publication of DE60042666D1 publication Critical patent/DE60042666D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10P30/204—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H10P30/208—
    • H10P30/225—
DE60042666T 1999-01-14 2000-01-12 Halbleiterbauelement und Verfahren zu dessen Herstellung Expired - Lifetime DE60042666D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP764199 1999-01-14

Publications (1)

Publication Number Publication Date
DE60042666D1 true DE60042666D1 (de) 2009-09-17

Family

ID=11671466

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60042666T Expired - Lifetime DE60042666D1 (de) 1999-01-14 2000-01-12 Halbleiterbauelement und Verfahren zu dessen Herstellung

Country Status (7)

Country Link
US (2) US6597016B1 (de)
EP (1) EP1020900B1 (de)
JP (1) JP3592981B2 (de)
KR (1) KR100648769B1 (de)
CN (1) CN1184694C (de)
DE (1) DE60042666D1 (de)
TW (1) TW439300B (de)

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US6597016B1 (en) 2003-07-22
EP1020900A2 (de) 2000-07-19
EP1020900A3 (de) 2000-09-20
US20030162335A1 (en) 2003-08-28
JP3592981B2 (ja) 2004-11-24
KR100648769B1 (ko) 2006-11-23
TW439300B (en) 2001-06-07
KR20000057756A (ko) 2000-09-25
US7049198B2 (en) 2006-05-23
EP1020900B1 (de) 2009-08-05
CN1260595A (zh) 2000-07-19
CN1184694C (zh) 2005-01-12

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