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DE60039274D1 - Negativ arbeitende Resistzusammensetzung - Google Patents

Negativ arbeitende Resistzusammensetzung

Info

Publication number
DE60039274D1
DE60039274D1 DE60039274T DE60039274T DE60039274D1 DE 60039274 D1 DE60039274 D1 DE 60039274D1 DE 60039274 T DE60039274 T DE 60039274T DE 60039274 T DE60039274 T DE 60039274T DE 60039274 D1 DE60039274 D1 DE 60039274D1
Authority
DE
Germany
Prior art keywords
resist composition
negative resist
negative
composition
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60039274T
Other languages
English (en)
Inventor
Kazuya Uenishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Application granted granted Critical
Publication of DE60039274D1 publication Critical patent/DE60039274D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/128—Radiation-activated cross-linking agent containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE60039274T 1999-08-11 2000-08-11 Negativ arbeitende Resistzusammensetzung Expired - Lifetime DE60039274D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22779299A JP3929653B2 (ja) 1999-08-11 1999-08-11 ネガ型レジスト組成物

Publications (1)

Publication Number Publication Date
DE60039274D1 true DE60039274D1 (de) 2008-08-07

Family

ID=16866470

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60039274T Expired - Lifetime DE60039274D1 (de) 1999-08-11 2000-08-11 Negativ arbeitende Resistzusammensetzung

Country Status (5)

Country Link
US (1) US6511783B1 (de)
EP (1) EP1076261B1 (de)
JP (1) JP3929653B2 (de)
KR (1) KR100651042B1 (de)
DE (1) DE60039274D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4070393B2 (ja) 2000-01-17 2008-04-02 富士フイルム株式会社 ネガ型レジスト組成物
JP4092083B2 (ja) * 2001-03-21 2008-05-28 富士フイルム株式会社 電子線又はｘ線用ネガ型レジスト組成物
JP4645789B2 (ja) * 2001-06-18 2011-03-09 Ｊｓｒ株式会社 ネガ型感放射線性樹脂組成物
US20030235775A1 (en) * 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
US7083892B2 (en) * 2002-06-28 2006-08-01 Fuji Photo Film Co., Ltd. Resist composition
JP4213925B2 (ja) 2002-08-19 2009-01-28 富士フイルム株式会社 ネガ型レジスト組成物
DE10244197A1 (de) * 2002-09-23 2004-04-08 Infineon Technologies Ag Zusammensetzung, die eine elektrisch leitfähige Lackschicht bildet und ein Verfahren zur Strukturierung eines Fotoresists unter Verwendung der Lackschicht
KR101392291B1 (ko) * 2007-04-13 2014-05-07 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막트랜지스터기판의 제조방법
JP5745368B2 (ja) * 2011-09-02 2015-07-08 富士フイルム株式会社 ネガ型感活性光線性又は感放射線性樹脂組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
WO2014208542A1 (ja) * 2013-06-26 2014-12-31 日産化学工業株式会社 置換された架橋性化合物を含むレジスト下層膜形成組成物
JP6520091B2 (ja) * 2013-12-16 2019-05-29 Jsr株式会社 着色組成物、着色硬化膜及び表示素子
JP6313604B2 (ja) * 2014-02-05 2018-04-18 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法
KR101598826B1 (ko) * 2015-08-28 2016-03-03 영창케미칼 주식회사 에칭 내성이 우수한 i-선용 네가티브형 포토레지스트 조성물
JP2017090849A (ja) * 2015-11-17 2017-05-25 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 高耐熱性レジスト組成物およびそれを用いたパターン形成方法
US9872399B1 (en) 2016-07-22 2018-01-16 International Business Machines Corporation Implementing backdrilling elimination utilizing anti-electroplate coating

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3821584A1 (de) 1988-06-25 1989-12-28 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichungsmaterial fuer hochenergetische strahlung
JPH02150848A (ja) 1988-12-02 1990-06-11 Hitachi Ltd 光退色性放射線感応性組成物およびそれを用いたパターン形成法
US5128232A (en) 1989-05-22 1992-07-07 Shiply Company Inc. Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
CA2019693A1 (en) 1989-07-07 1991-01-07 Karen Ann Graziano Acid-hardening photoresists of improved sensitivity
JP2500533B2 (ja) 1990-01-30 1996-05-29 和光純薬工業株式会社 新規なジアゾジスルホン化合物
DE4006190A1 (de) 1990-02-28 1991-08-29 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JP2973585B2 (ja) 1990-06-15 1999-11-08 三菱化学株式会社 ネガ型感光性組成物
JPH04291259A (ja) 1991-03-19 1992-10-15 Nippon Zeon Co Ltd レジスト組成物
JPH04367864A (ja) 1991-06-14 1992-12-21 Nippon Zeon Co Ltd レジスト組成物
JP2722870B2 (ja) 1991-06-14 1998-03-09 日本ゼオン株式会社 レジスト組成物
US5286600A (en) 1991-08-27 1994-02-15 Mitsubishi Kasei Corporation Negative photosensitive composition and method for forming a resist pattern by means thereof
JP3016231B2 (ja) 1991-11-15 2000-03-06 ジェイエスアール株式会社 ネガ型レジスト組成物
JP3259263B2 (ja) 1992-06-22 2002-02-25 ジェイエスアール株式会社 ネガ型感放射線性樹脂組成物
US5389491A (en) 1992-07-15 1995-02-14 Matsushita Electric Industrial Co., Ltd. Negative working resist composition
JPH06236024A (ja) 1992-09-24 1994-08-23 Sumitomo Chem Co Ltd フォトレジスト組成物
JPH06199770A (ja) 1992-12-28 1994-07-19 Japan Synthetic Rubber Co Ltd 新規オニウム塩およびそれを含有する感放射線性樹脂 組成物
US5344742A (en) 1993-04-21 1994-09-06 Shipley Company Inc. Benzyl-substituted photoactive compounds and photoresist compositions comprising same
JPH083635A (ja) 1994-06-15 1996-01-09 Kobe Steel Ltd 靱性の優れた鋼板の製造方法
US5731364A (en) * 1996-01-24 1998-03-24 Shipley Company, L.L.C. Photoimageable compositions comprising multiple arylsulfonium photoactive compounds
JP3636827B2 (ja) * 1996-07-01 2005-04-06 富士写真フイルム株式会社 ネガ型画像記録材料
JP3798504B2 (ja) * 1997-04-21 2006-07-19 富士写真フイルム株式会社 ネガ型画像記録材料
US6383714B1 (en) * 1999-05-31 2002-05-07 Fuji Photo Film Co., Ltd. Image recording material and planographic printing plate using same

Also Published As

Publication number Publication date
JP2001051417A (ja) 2001-02-23
EP1076261A1 (de) 2001-02-14
US6511783B1 (en) 2003-01-28
KR100651042B1 (ko) 2006-11-28
EP1076261B1 (de) 2008-06-25
JP3929653B2 (ja) 2007-06-13
KR20010021256A (ko) 2001-03-15

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Legal Events

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