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DE60022458D1 - Halbleitergehäuse, halbleitervorrichtung, elektronikelement und herstellung eines halbleitergehäuses - Google Patents

Halbleitergehäuse, halbleitervorrichtung, elektronikelement und herstellung eines halbleitergehäuses

Info

Publication number
DE60022458D1
DE60022458D1 DE60022458T DE60022458T DE60022458D1 DE 60022458 D1 DE60022458 D1 DE 60022458D1 DE 60022458 T DE60022458 T DE 60022458T DE 60022458 T DE60022458 T DE 60022458T DE 60022458 D1 DE60022458 D1 DE 60022458D1
Authority
DE
Germany
Prior art keywords
semiconductor
housing
manufacture
electronic element
semiconductor housing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60022458T
Other languages
English (en)
Other versions
DE60022458T2 (de
Inventor
Takanao Suzuki
Masatoshi Inaba
Tadanori Ominato
Masahiro Kaizu
Akihito Kurosaka
Nobuyuki Sadakata
Mutsumi Masumoto
Kenji Masumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Texas Instruments Japan Ltd
Original Assignee
Fujikura Ltd
Texas Instruments Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd, Texas Instruments Japan Ltd filed Critical Fujikura Ltd
Publication of DE60022458D1 publication Critical patent/DE60022458D1/de
Application granted granted Critical
Publication of DE60022458T2 publication Critical patent/DE60022458T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10W72/20
    • H10W20/49
    • H10W72/019
    • H10W74/01
    • H10W74/111
    • H10W74/129
    • H10W70/05
    • H10W70/65
    • H10W70/656
    • H10W70/68
    • H10W72/242
    • H10W72/244
    • H10W72/251
    • H10W72/29
    • H10W72/922
    • H10W72/923
    • H10W72/9415
    • H10W72/952
    • H10W72/983
DE60022458T 1999-06-15 2000-06-13 Halbleitergehäuse, halbleitervorrichtung, elektronikelement und herstellung eines halbleitergehäuses Expired - Lifetime DE60022458T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP16900899 1999-06-15
JP16900899 1999-06-15
PCT/JP2000/003836 WO2000077844A1 (fr) 1999-06-15 2000-06-13 Boitier a semi-conducteur, dispositif semi-conducteur, dispositif electronique et procede de fabrication de boitier a semi-conducteur

Publications (2)

Publication Number Publication Date
DE60022458D1 true DE60022458D1 (de) 2005-10-13
DE60022458T2 DE60022458T2 (de) 2006-06-22

Family

ID=15878638

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60022458T Expired - Lifetime DE60022458T2 (de) 1999-06-15 2000-06-13 Halbleitergehäuse, halbleitervorrichtung, elektronikelement und herstellung eines halbleitergehäuses

Country Status (7)

Country Link
US (3) US6835595B1 (de)
EP (1) EP1107307B1 (de)
JP (1) JP3651597B2 (de)
AU (1) AU5109900A (de)
CA (1) CA2340677C (de)
DE (1) DE60022458T2 (de)
WO (1) WO2000077844A1 (de)

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US7582966B2 (en) 2006-09-06 2009-09-01 Megica Corporation Semiconductor chip and method for fabricating the same
US7813730B2 (en) * 2006-10-17 2010-10-12 Mavenir Systems, Inc. Providing mobile core services independent of a mobile device
US7928582B2 (en) * 2007-03-09 2011-04-19 Micron Technology, Inc. Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces
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JP4121543B1 (ja) 2007-06-18 2008-07-23 新光電気工業株式会社 電子装置
JP4536757B2 (ja) * 2007-08-02 2010-09-01 株式会社フジクラ 半導体パッケージおよび半導体パッケージの製造方法
US8058726B1 (en) 2008-05-07 2011-11-15 Amkor Technology, Inc. Semiconductor device having redistribution layer
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JP5503590B2 (ja) * 2011-04-28 2014-05-28 ラピスセミコンダクタ株式会社 半導体装置
US8373282B2 (en) * 2011-06-16 2013-02-12 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer level chip scale package with reduced stress on solder balls
KR20130044050A (ko) * 2011-10-21 2013-05-02 에스케이하이닉스 주식회사 반도체 패키지 및 적층 반도체 패키지
US9099396B2 (en) * 2011-11-08 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Post-passivation interconnect structure and method of forming the same
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KR101965256B1 (ko) * 2012-10-17 2019-04-04 삼성디스플레이 주식회사 유기 발광 표시 장치
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US9257511B2 (en) * 2013-03-26 2016-02-09 Infineon Technologies Ag Silicon carbide device and a method for forming a silicon carbide device
KR20150144174A (ko) * 2014-06-16 2015-12-24 삼성전자주식회사 반도체 패키지
TWI662657B (zh) * 2015-04-07 2019-06-11 聯華電子股份有限公司 半導體元件的堆疊結構
KR20170040842A (ko) * 2015-10-05 2017-04-14 삼성전자주식회사 반도체 칩, 이의 제조방법, 및 이를 포함하는 반도체 패키지
US10103114B2 (en) * 2016-09-21 2018-10-16 Nanya Technology Corporation Semiconductor structure and manufacturing method thereof
US20180138115A1 (en) * 2016-11-11 2018-05-17 Advanced Semiconductor Engineering, Inc. Semiconductor package structure and method for manufacturing the same
KR101897653B1 (ko) * 2017-03-06 2018-09-12 엘비세미콘 주식회사 컴플라이언트 범프의 제조방법
KR102127828B1 (ko) 2018-08-10 2020-06-29 삼성전자주식회사 반도체 패키지
KR102551909B1 (ko) * 2018-10-16 2023-07-04 삼성전자주식회사 반도체 패키지 및 그 제조 방법

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Also Published As

Publication number Publication date
EP1107307A8 (de) 2001-11-21
US7157363B2 (en) 2007-01-02
US6835595B1 (en) 2004-12-28
US20050037539A1 (en) 2005-02-17
EP1107307B1 (de) 2005-09-07
EP1107307A1 (de) 2001-06-13
JP3651597B2 (ja) 2005-05-25
US20030207494A1 (en) 2003-11-06
WO2000077844A1 (fr) 2000-12-21
CA2340677C (en) 2005-07-05
US7023088B2 (en) 2006-04-04
DE60022458T2 (de) 2006-06-22
CA2340677A1 (en) 2000-12-21
AU5109900A (en) 2001-01-02
EP1107307A4 (de) 2001-12-27

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