DE3588186D1 - Halbleiterspeicher mit Serienzugriff - Google Patents

Halbleiterspeicher mit Serienzugriff

Info

Publication number: DE3588186D1
Authority: DE; Germany
Prior art keywords: semiconductor memory; serial access; serial; access; semiconductor
Prior art date: 1985-01-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE3588186T

Other languages

English (en)

Other versions

DE3588186T2 (de

Inventor

Raymond Pinkham

Frederick A Valente

Jerry R Vanaken

Daniel F Anderson

Karl M Guttag

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Texas Instruments Inc

Original Assignee

Texas Instruments Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-01-22

Filing date

1985-12-17

Publication date

1998-06-25

1985-01-22 Priority claimed from US06/693,424 external-priority patent/US4667313A/en

1985-01-22 Priority claimed from US06/693,417 external-priority patent/US4598388A/en

1985-01-22 Priority claimed from US06/693,422 external-priority patent/US4648077A/en

1985-01-22 Priority claimed from US06/693,498 external-priority patent/US4683555A/en

1985-01-22 Priority claimed from US06693421 external-priority patent/US4636986B1/en

1985-12-17 Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc

1998-06-25 Publication of DE3588186D1 publication Critical patent/DE3588186D1/de

1998-12-03 Application granted granted Critical

1998-12-03 Publication of DE3588186T2 publication Critical patent/DE3588186T2/de

2005-12-18 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/848—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by adjacent switching
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
- G09G5/36—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators characterised by the display of a graphic pattern, e.g. using an all-points-addressable [APA] memory
- G09G5/39—Control of the bit-mapped memory
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/12—Frame memory handling
- G09G2360/123—Frame memory handling using interleaving
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/12—Frame memory handling
- G09G2360/126—The frame memory having additional data ports, not inclusive of standard details of the output serial port of a VRAM

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
General Physics & Mathematics (AREA)
Theoretical Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Multimedia (AREA)
Dram (AREA)
Image Input (AREA)
Static Random-Access Memory (AREA)

DE19853588186 1985-01-22 1985-12-17 Halbleiterspeicher mit Serienzugriff Expired - Fee Related DE3588186T2 (de)

Applications Claiming Priority (5)

Application Number	Priority Date	Filing Date	Title
US06/693,424 US4667313A (en)	1985-01-22	1985-01-22	Serially accessed semiconductor memory with tapped shift register
US06/693,417 US4598388A (en)	1985-01-22	1985-01-22	Semiconductor memory with redundant column circuitry
US06/693,422 US4648077A (en)	1985-01-22	1985-01-22	Video serial accessed memory with midline load
US06/693,498 US4683555A (en)	1985-01-22	1985-01-22	Serial accessed semiconductor memory with reconfigureable shift registers
US06693421 US4636986B1 (en)	1985-01-22	1985-01-22	Separately addressable memory arrays in a multiple array semiconductor chip

Publications (2)

Publication Number	Publication Date
DE3588186D1 true DE3588186D1 (de)	1998-06-25
DE3588186T2 DE3588186T2 (de)	1998-12-03

Family

ID=27542088

Family Applications (3)

Application Number	Title	Priority Date	Filing Date
DE19853588156 Expired - Fee Related DE3588156T2 (de)	1985-01-22	1985-12-17	Halbleiterspeicher mit Serienzugriff
DE19853587309 Expired - Fee Related DE3587309T2 (de)	1985-01-22	1985-12-17	Mehrfachvideospeichersystem mit Bildelementkartierung.
DE19853588186 Expired - Fee Related DE3588186T2 (de)	1985-01-22	1985-12-17	Halbleiterspeicher mit Serienzugriff

Family Applications Before (2)

Application Number	Title	Priority Date	Filing Date
DE19853588156 Expired - Fee Related DE3588156T2 (de)	1985-01-22	1985-12-17	Halbleiterspeicher mit Serienzugriff
DE19853587309 Expired - Fee Related DE3587309T2 (de)	1985-01-22	1985-12-17	Mehrfachvideospeichersystem mit Bildelementkartierung.

Country Status (4)

Country	Link
EP (3)	EP0189576B1 (de)
JP (6)	JPH0612606B2 (de)
CN (1)	CN1005662B (de)
DE (3)	DE3588156T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6289148A (ja) *	1985-10-15	1987-04-23	Mitsubishi Electric Corp	２ポ−トメモリ
JP2728395B2 (ja) *	1986-09-26	1998-03-18	株式会社日立製作所	半導体記憶装置
GB8631027D0 (en) *	1986-12-30	1987-02-04	Questech Ltd	Recording editing & moving television pictures
US4884069A (en) *	1987-03-19	1989-11-28	Apple Computer, Inc.	Video apparatus employing VRAMs
US6112287A (en)	1993-03-01	2000-08-29	Busless Computers Sarl	Shared memory multiprocessor system using a set of serial links as processors-memory switch
JPH01245486A (ja) *	1988-03-28	1989-09-29	Toshiba Corp	半導体メモリ
US5089993B1 (en) *	1989-09-29	1998-12-01	Texas Instruments Inc	Memory module arranged for data and parity bits
JP2900451B2 (ja) *	1989-11-30	1999-06-02	ソニー株式会社	メモリ装置
IL96808A (en)	1990-04-18	1996-03-31	Rambus Inc	Introductory / Origin Circuit Agreed Using High-Performance Brokerage
US6751696B2 (en)	1990-04-18	2004-06-15	Rambus Inc.	Memory device having a programmable register
GB2247965B (en) *	1990-09-14	1994-08-24	Samsung Electronics Co Ltd	Dual-port memory device
US5261049A (en) *	1991-07-22	1993-11-09	International Business Machines Corporation	Video RAM architecture incorporating hardware decompression
US5315388A (en) *	1991-11-19	1994-05-24	General Instrument Corporation	Multiple serial access memory for use in feedback systems such as motion compensated television
JPH05216741A (ja) *	1992-05-20	1993-08-27	Hitachi Ltd	記憶回路及びその動作モード設定方法
US5473566A (en) *	1994-09-12	1995-12-05	Cirrus Logic, Inc.	Memory architecture and devices, systems and methods utilizing the same
FR2779843A1 (fr) *	1998-06-16	1999-12-17	Busless Computers	Composant memoire multiport serie et application a un ordinateur
US6240026B1 (en) *	2000-03-07	2001-05-29	Stmicroelectronics, Inc.	Bit line sense circuit and method for dynamic random access memories
US7652922B2 (en)	2005-09-30	2010-01-26	Mosaid Technologies Incorporated	Multiple independent serial link memory
US20070076502A1 (en) *	2005-09-30	2007-04-05	Pyeon Hong B	Daisy chain cascading devices
JP5363252B2 (ja) *	2009-09-09	2013-12-11	ルネサスエレクトロニクス株式会社	半導体集積回路
FR2951310B1 (fr) *	2009-10-13	2011-11-18	St Microelectronics Rousset	Dispositif de memoire a protocole serie et procede d'adressage correspondant

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL7309642A (nl) *	1973-07-11	1975-01-14	Philips Nv	Geintegreerd geheugen.
JPS5410412A (en) *	1977-06-23	1979-01-26	Kyokuto Kikai Seisakusho:Kk	Low noise multi-stage axial flow blower
US4347587A (en) *	1979-11-23	1982-08-31	Texas Instruments Incorporated	Semiconductor integrated circuit memory device with both serial and random access arrays
JPS5727477A (en) *	1980-07-23	1982-02-13	Nec Corp	Memory circuit
JPS57198592A (en) *	1981-05-29	1982-12-06	Hitachi Ltd	Semiconductor memory device
US4439762A (en) *	1981-12-28	1984-03-27	Beckman Instruments, Inc.	Graphics memory expansion system
US4541075A (en) *	1982-06-30	1985-09-10	International Business Machines Corporation	Random access memory having a second input/output port
JPS5930295A (ja) *	1982-08-12	1984-02-17	Fujitsu Ltd	半導体メモリのアクセス方式
US4562435A (en) *	1982-09-29	1985-12-31	Texas Instruments Incorporated	Video display system using serial/parallel access memories
JPS605493A (ja) *	1983-06-22	1985-01-12	Toshiba Corp	半導体記憶装置
JPS60236184A (ja) *	1984-05-08	1985-11-22	Nec Corp	半導体メモリ
JPS6196591A (ja) *	1984-10-17	1986-05-15	Fujitsu Ltd	半導体記憶装置

1985
- 1985-12-17 DE DE19853588156 patent/DE3588156T2/de not_active Expired - Fee Related
- 1985-12-17 DE DE19853587309 patent/DE3587309T2/de not_active Expired - Fee Related
- 1985-12-17 EP EP19850116073 patent/EP0189576B1/de not_active Expired - Lifetime
- 1985-12-17 EP EP92117736A patent/EP0523759B1/de not_active Expired - Lifetime
- 1985-12-17 EP EP92117737A patent/EP0523760B1/de not_active Expired - Lifetime
- 1985-12-17 DE DE19853588186 patent/DE3588186T2/de not_active Expired - Fee Related
1986
- 1986-01-21 CN CN86100419.1A patent/CN1005662B/zh not_active Expired
- 1986-01-21 JP JP61010961A patent/JPH0612606B2/ja not_active Expired - Lifetime
1991
- 1991-05-07 JP JP3101346A patent/JPH04228175A/ja active Pending
- 1991-05-07 JP JP3101344A patent/JPH04228174A/ja active Pending
- 1991-05-07 JP JP3101343A patent/JPH04228173A/ja active Pending
- 1991-05-07 JP JP3101342A patent/JPH0743929B2/ja not_active Expired - Lifetime
- 1991-05-07 JP JP3101345A patent/JP2599841B2/ja not_active Expired - Lifetime

Also Published As

Publication number	Publication date
JPH04228174A (ja)	1992-08-18
EP0189576B1 (de)	1993-04-28
DE3587309D1 (de)	1993-06-03
EP0189576A3 (en)	1990-04-04
JPH04228172A (ja)	1992-08-18
JP2599841B2 (ja)	1997-04-16
EP0523759A2 (de)	1993-01-20
DE3588186T2 (de)	1998-12-03
JPH04228173A (ja)	1992-08-18
JPH0612606B2 (ja)	1994-02-16
DE3588156T2 (de)	1998-01-08
JPH0743929B2 (ja)	1995-05-15
JPS61216200A (ja)	1986-09-25
CN86100419A (zh)	1986-10-15
EP0523760B1 (de)	1997-06-04
EP0523759A3 (en)	1993-03-31
EP0523760A3 (en)	1993-03-31
EP0523760A2 (de)	1993-01-20
DE3588156D1 (de)	1997-07-10
EP0523759B1 (de)	1998-05-20
EP0189576A2 (de)	1986-08-06
DE3587309T2 (de)	1993-10-21
CN1005662B (zh)	1989-11-01
JPH04228170A (ja)	1992-08-18
JPH04228175A (ja)	1992-08-18

Publication	Publication Date	Title
KR860006106A (ko)	1986-08-18	반도체 메모리
KR870005391A (ko)	1987-06-08	자기정정기능을 갖춘 반도체메모리
KR860009491A (ko)	1986-12-23	반도체 메모리 장치
KR870001664A (ko)	1987-03-17	반도체 기억 장치
KR860001484A (ko)	1986-02-26	반도체 기억장치
KR860005370A (ko)	1986-07-21	반도체 기억장치
DE3686994D1 (de)	1992-11-26	Halbleiterspeicher.
KR890012387A (ko)	1989-08-26	반도체 기억장치
DE3588156D1 (de)	1997-07-10	Halbleiterspeicher mit Serienzugriff
KR860005441A (ko)	1986-07-23	반도체기억장치
DE3671124D1 (de)	1990-06-13	Halbleiterspeicherzelle.
KR860004478A (ko)	1986-06-23	반도체 메모리 장치
KR860002824A (ko)	1986-04-30	반도체 기억장치
KR890016569A (ko)	1989-11-29	반도체 기억장치
DE3675445D1 (de)	1990-12-13	Halbleiterspeicheranordnung.
DE3680562D1 (de)	1991-09-05	Halbleiterspeicheranordnung.
KR860005369A (ko)	1986-07-21	반도체 기억장치
KR860003606A (ko)	1986-05-28	반도체 메모리 장치
KR900008521A (ko)	1990-06-03	반도체 기억장치
KR860007747A (ko)	1986-10-17	다이내믹형 반도체기억장치
KR900006986A (ko)	1990-05-09	반도체메모리
KR850008756A (ko)	1985-12-21	반도체 메모리 장치
KR870010545A (ko)	1987-11-30	반도체 기억 장치
KR860007744A (ko)	1986-10-17	반도체 메모리장치
DE3682346D1 (de)	1991-12-12	Halbleiterspeicheranordnung.

Legal Events

Date	Code	Title	Description
1999-06-17	8364	No opposition during term of opposition
2003-10-09	8339	Ceased/non-payment of the annual fee