DE1270165B - Circuit arrangement with several series-connected semiconductor valves controlled by ignition pulses - Google Patents
Circuit arrangement with several series-connected semiconductor valves controlled by ignition pulsesInfo
- Publication number
- DE1270165B DE1270165B DE19601270165 DE1270165A DE1270165B DE 1270165 B DE1270165 B DE 1270165B DE 19601270165 DE19601270165 DE 19601270165 DE 1270165 A DE1270165 A DE 1270165A DE 1270165 B DE1270165 B DE 1270165B
- Authority
- DE
- Germany
- Prior art keywords
- voltage divider
- semiconductor
- circuit arrangement
- semiconductor valves
- ignition pulses
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
- H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
- H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/145—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
- H02M7/155—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
- H02M7/19—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only arranged for operation in series, e.g. for voltage multiplication
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
- H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Description
DEUTSCHESGERMAN
PATENTAMTPATENT OFFICE
AUSLEGESCHRIFTEDITORIAL
Int. Cl.: Int. Cl .:
H02mH02m
H02pH02p
Deutsche Kl.: 21 d2-12/04German class: 21 d2-12 / 04
Nummer:
Aktenzeichen:
Anmeldetag:
Auslegetag:Number:
File number:
Registration date:
Display day:
P 12 70 165.4-32
19. August 1960
12.Juni 1968P 12 70 165.4-32
August 19, 1960
June 12, 1968
Es sind Halbleiter-Ventile bekannt, die sich ähnlich wie gasgefüllte Entladungsgefäße durch Zündimpulse steuern lassen (sogenannte Thyristoren). Halbleiter-Ventile dieser Art sind zur Zeit für Lastspannungen bis zu einigen 100 V effektiv verfügbar. Will man größere Spannungen gleichrichten bzw. steuern, so kann man eine entsprechende Anzahl von Halbleiter-Ventilen in Reihe schalten. Im allgemeinen erweist es sich hierbei als erforderlich, parallel zu der Reihenschaltung der Halbleiter-Ventile einen Spannungsteiler zu schalten, der die Aufgabe hat, die anliegende Lastspannung gleichmäßig auf die Halbleiter-Ventile zu verteilen und hochfrequente Schwingungen zu dämpfen. Bei Stromrichtern mit mehreren in Reihe geschalteten Entladungsgefäßen ist es bekannt, zu diesem Zweck einen Spannungsteiler zu verwenden, bei dem parallel zu jedem Gefäß ein Kondensator und ein ohmscher Widerstand geschaltet sind.Semiconductor valves are known which, similar to gas-filled discharge vessels, are activated by ignition pulses control (so-called thyristors). Semiconductor valves of this type are currently used for load voltages up to a few 100 V effective available. Do you want to rectify or rectify larger voltages? control, you can connect a corresponding number of semiconductor valves in series. In general it proves to be necessary in parallel to the series connection of the semiconductor valves to switch a voltage divider, which has the task of distributing the applied load voltage evenly to distribute it to the semiconductor valves and to dampen high-frequency vibrations. at It is known to convert power converters with several discharge vessels connected in series for this purpose to use a voltage divider in which a capacitor and a ohmic resistance are switched.
Die Notwendigkeit, den einzelnen Halbleiter-Ven- ao tilen einer Reihenschaltung die Zündimpulse zuzuführen, bedingt bisher einen hohen Aufwand, da der auf Erdpotential erzeugte Zündimpuls mittels Isoliertransformatoren oder Kopplungskondensatoren hoher Spannungsfestigkeit übertragen werden muß.The need to feed the ignition pulses to the individual semiconductor valves in a series circuit, So far, this has required a lot of effort, since the ignition pulse generated at ground potential by means of isolating transformers or coupling capacitors with high dielectric strength must be transferred.
Zur Überwindung dieses Mangels geht die Erfindung von einer bekannten Schaltungsanordnung aus, bei der in einer Reihenschaltung von Transistoren nur ein Transistor unmittelbar gesteuert wird und die Steuerströme für die anderen Transistoren einem parallel zur Transistor-Reihenschaltung liegenden ohmschen Spannungsteiler entnommen werden. Die zur Steuerung der Transistoren erforderlichen Basis-Emitter-Ströme werden hierbei einer Spannungsquelle entnommen, die an die Enden des Spannungsteilers angeschlossen ist. Eine Übertragung dieser Schaltungsweise auf Reihenschaltungen von Halbleiter-Ventilen, die durch Zündimpulse gesteuert werden, ist nicht ohne weiteres möglich, da zur Steuerung dieser Elemente kurzdauernde Impulse relativ hoher Stromstärke und Energie erforderlich sind. Wollte man hierfür einen ohmschen Spannungsteiler verwenden, so müßte man dessen Widerstände niederohmig bemessen, um dem Spannungsteiler kurzzeitig relativ hohe Ströme entnehmen zu können. Das würde aber bedeuten, daß der Spannungsteiler erhebliche Verluste verursacht.To overcome this deficiency, the invention is based on a known circuit arrangement off, in which only one transistor is directly controlled in a series connection of transistors and the control currents for the other transistors in a parallel to the transistor series circuit Ohmic voltage divider can be taken. The ones required to control the transistors Base-emitter currents are taken from a voltage source that is applied to the ends of the Voltage divider is connected. A transfer of this switching method to series connections of Semiconductor valves that are controlled by ignition pulses are not easily possible because To control these elements, short-duration pulses of relatively high current strength and energy are required are. If you wanted to use an ohmic voltage divider for this, you would have to use its resistors dimensioned low resistance in order to be able to draw relatively high currents from the voltage divider for a short time. But that would mean that the voltage divider causes considerable losses.
Die Erfindung bezieht sich auf eine Schaltungsanordnung mit mehreren in Reihe liegenden gesteuerten
Halbleiter-Ventilen und mit einem parallel zu diesen geschalteten Spannungsteiler, bei der nur
einem Halbleiter-Ventil ein Steuerstrom unmittelbar Schaltungsanordnung mit mehreren in Reihe
liegenden durch Zündimpulse gesteuerten
Halbleiter-VentilenThe invention relates to a circuit arrangement with a plurality of controlled semiconductor valves located in series and with a voltage divider connected in parallel to these, in which only one semiconductor valve supplies a control current directly to a circuit arrangement with several in series
lying controlled by ignition pulses
Semiconductor valves
Anmelder:Applicant:
Siemens Aktiengesellschaft, Berlin und München, 8520 Erlangen, Werner-von-Siemens-Str. 50Siemens Aktiengesellschaft, Berlin and Munich, 8520 Erlangen, Werner-von-Siemens-Str. 50
Als Erfinder benannt:Named as inventor:
Dipl.-Ing. Ludwig Filberich, 1000 BerlinDipl.-Ing. Ludwig Filberich, 1000 Berlin
zugeführt wird und die Steuerströme für die übrigen Halbleiter-Ventile mittelbar von Potentialänderungen im Spannungsteiler abgeleitet werden. Die Erfindung ist bei einer solchen Schaltungsanordnung darin zu sehen, daß bei Verwendung von Halbleiter-Ventilen, die durch Zündimpulse gesteuert werden, der Spannungsteiler parallel zu jedem Halbleiter-Ventil eine Reihenschaltung aus einem Kondensator und einem ohmschen Widerstand aufweist und daß jeweils der zu einem gezündeten Halbleiter-Ventil parallelliegende Kondensator des Spannungsteilers die Energie für den Zündimpuls des als nächstes zu zündenden Halbleiter-Ventils liefert. Da zur Wiederaufladung der Kondensatoren relativ lange Zeiträume zur Verfügung stehen, kann der Spannungsteiler im ganzen hochohmig und damit verlustarm ausgebildet werden. Man kann die Zündimpulse für die mittelbar gesteuerten Halbleiter-Ventile an den Widerständen des Spannungsteilers abnehmen. Unter Umständen kann es jedoch auch vorteilhaft sein, die Zündimpulse für die mittelbar gesteuerten Halbleiter-Ventile dem Spannungsteiler über Isolierwandler zu entnehmen. Für diesen Zweck sind z. B. kleine Ringkernwandler geeignet, deren Isolierung nur für etwa die doppelte Betriebssperrspannung eines einzelnen Ventils bemessen zu sein braucht.is supplied and the control currents for the other semiconductor valves indirectly from changes in potential can be derived in the voltage divider. The invention applies to such a circuit arrangement therein see that when using semiconductor valves, which are controlled by ignition pulses, the voltage divider parallel to each semiconductor valve a series connection of a capacitor and a Has ohmic resistance and that in each case the capacitor of the voltage divider lying parallel to an ignited semiconductor valve Supplies energy for the ignition pulse of the semiconductor valve to be ignited next. As for recharging the capacitors are available for relatively long periods of time, the voltage divider can are formed as a whole with high resistance and thus with little loss. You can use the ignition pulses for the indirectly controlled semiconductor valves at the resistors of the voltage divider decrease. Under Under certain circumstances, however, it can also be advantageous to use the ignition pulses for the indirectly controlled semiconductor valves to be taken from the voltage divider via an isolating transformer. For this purpose z. B. Small toroidal converters are suitable whose insulation is only for about twice the operating reverse voltage of a single valve needs to be sized.
Die F i g. 1 und 2 zeigen Ausführungsbeispiele der Erfindung.The F i g. 1 and 2 show exemplary embodiments of the invention.
In F i g. 1 sind mit 11, 12, 13 und 14 vier steuerbare Halbleiter-Ventile in Reihenschaltung bezeichnet. Die Reihenschaltung kann an der oberen Grenze der Figur noch durch beliebig viele weitere Glieder ergänzt werden. Parallel zu den Halbleiter-Ventilen 11 bis 14 liegt ein Spannungsteiler, der aus Kondensatoren 15, 16, 17 und 18 und ohmschen Widerständen 19,20,21 und 22 zusammengesetzt ist.In Fig. 1, 11, 12, 13 and 14 denote four controllable semiconductor valves connected in series. The series connection can be made by any number of others at the upper limit of the figure Links are added. In parallel to the semiconductor valves 11 to 14, there is a voltage divider that is off Capacitors 15, 16, 17 and 18 and ohmic resistors 19, 20, 21 and 22 is composed.
809 559/190809 559/190
Der Zündimpuls für das Halbleiter-Ventil 11 wird in beliebiger Weise durch einen Steuersatz 25 erzeugt und durch einen Steuerüberträger 26 der Steuerstrecke des Halbleiter-Ventils 11 zugeführt. Die Steuerstrecke des Halbleiter-Ventils 12 ist an die Enden des Widerstandes 19 angeschlossen, entsprechend die Steuerstrecke des Halbleiter-Ventils 13 an die Enden des Widerstandes 20 usw.The ignition pulse for the semiconductor valve 11 is generated in any way by a control unit 25 and supplied to the control path of the semiconductor valve 11 by a control transmitter 26. the Control path of the semiconductor valve 12 is connected to the ends of the resistor 19, accordingly the control path of the semiconductor valve 13 to the ends of the resistor 20, etc.
Die Wirkungsweise der Schaltungsanordnung ist folgende:The circuit arrangement works as follows:
An der Reihenschaltung der Halbleiter-Ventile 11 bis 14 möge eine Spannung mit der eingezeichneten Richtung bestehen; solange noch kein Zündimpuls auf das Halbleiter-Ventil 11 gegeben ist, sperrt die Reihenschaltung. Wird nun das Halbleiter-Ventil 11 durch einen Zündimpuls gezündet, so bricht die an diesem Halbleiter-Ventil bis dahin bestehende Spannung zusammen, wodurch das Potential des Punktes 19 α (unterer Anschluß des Widerstandes 19) schlagartig ansteigt. Der Spannungsanstieg am Widerstand 19 dient seinerseits zur Zündung des Halbleiter-Ventils 12, worauf sich der gleiche Vorgang am Widerstand 20 bzw. Halbleiter-Ventil 13 wiederholt.At the series connection of the semiconductor valves 11 to 14 there may be a voltage with the direction shown; as long as no ignition pulse is given to the semiconductor valve 11, the series connection blocks. If the semiconductor valve 11 is now ignited by an ignition pulse, the voltage existing up to then on this semiconductor valve collapses, as a result of which the potential of the point 19 α (lower connection of the resistor 19) rises suddenly. The increase in voltage at resistor 19 in turn serves to ignite semiconductor valve 12, whereupon the same process is repeated at resistor 20 or semiconductor valve 13.
Bei dem Ausfuhrungsbeispiel nach Fig. 2 sind die Steuerstrecken der Halbleiter-Ventile 11 bis 14 über Ringkernwandler 31 bis 34, die den strom- * führenden Leiter 10 umschließen, mit dem Spannungsteiler verbunden. Der Wandler 31 besitzt eine Sekundärwicklung 31 a, an die die Steuerstrecke des Halbleiter-Ventils 12 angeschlossen ist, und eine RückmagnetisierungswicHung 31 b. Entsprechend sind auch die anderen Wandler 32 bis 34 ausgebildet.In the exemplary embodiment according to FIG. 2, the control paths of the semiconductor valves 11 to 14 are connected to the voltage divider via toroidal core converters 31 to 34 which enclose the current-carrying conductor 10. The converter 31 has a secondary winding 31 a, to which the control path of the semiconductor valve 12 is connected, and a reverse magnetization winding 31 b. The other converters 32 to 34 are also designed accordingly.
Bei Zündung des Halbleiter-Ventils 11 entlädt sich der Kondensator 15 über den Leiter 10; hierbei wird der Kern des Wandlers 31 ummagnetisiert, so daß an der Wicklung 31 α ein Spannungsimpuls entsteht, durch den das Halbleiter-Ventil 12 gezündet wird, Entsprechend verläuft die Zündung der anderen Halbleiter-Ventile 13, 14 usw. In der folgenden Halbwelle entgegengesetzter Polarität werden die Wandler 31 bis 34 durch Erregung der Wicklungen b usw. rückmagnetisiert.When the semiconductor valve 11 is ignited, the capacitor 15 discharges via the conductor 10; Here the core of the transducer 31 is magnetized, so that a voltage pulse is generated at the winding 31 α , by which the semiconductor valve 12 is ignited the transducers 31 to 34 are magnetized back by exciting the windings b etc.
Claims (3)
Deutsche Patentschriften Nr. 972096, 1021926; »Electronics«, 6. März 1959, S. 50, 51.Considered publications:
German Patent Nos. 972096, 1021926; Electronics, March 6, 1959, pp. 50, 51.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19601270165 DE1270165B (en) | 1960-08-19 | 1960-08-19 | Circuit arrangement with several series-connected semiconductor valves controlled by ignition pulses |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19601270165 DE1270165B (en) | 1960-08-19 | 1960-08-19 | Circuit arrangement with several series-connected semiconductor valves controlled by ignition pulses |
| DES0069998 | 1960-08-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1270165B true DE1270165B (en) | 1968-06-12 |
Family
ID=25751247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19601270165 Pending DE1270165B (en) | 1960-08-19 | 1960-08-19 | Circuit arrangement with several series-connected semiconductor valves controlled by ignition pulses |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1270165B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1021926B (en) * | 1956-04-26 | 1958-01-02 | Siemens Ag | Device for controlling higher DC voltages |
| DE972096C (en) * | 1944-07-29 | 1959-05-21 | Siemens Ag | Installation on high-voltage converters |
-
1960
- 1960-08-19 DE DE19601270165 patent/DE1270165B/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE972096C (en) * | 1944-07-29 | 1959-05-21 | Siemens Ag | Installation on high-voltage converters |
| DE1021926B (en) * | 1956-04-26 | 1958-01-02 | Siemens Ag | Device for controlling higher DC voltages |
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