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DE1265719B - Method for applying boron to a semiconductor body - Google Patents

Method for applying boron to a semiconductor body

Info

Publication number
DE1265719B
DE1265719B DES98656A DES0098656A DE1265719B DE 1265719 B DE1265719 B DE 1265719B DE S98656 A DES98656 A DE S98656A DE S0098656 A DES0098656 A DE S0098656A DE 1265719 B DE1265719 B DE 1265719B
Authority
DE
Germany
Prior art keywords
semiconductor body
vapors
boron
applying boron
applying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES98656A
Other languages
German (de)
Inventor
Dipl-Chem Dr Norbert Schink
Dipl-Phys Dr Wolfgang Weiske
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES98656A priority Critical patent/DE1265719B/en
Publication of DE1265719B publication Critical patent/DE1265719B/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H10P95/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Catalysts (AREA)

Description

BUNDESREPUBLIK DEUTSCHLANDFEDERAL REPUBLIC OF GERMANY

DEUTSCHESGERMAN

PATENTAMTPATENT OFFICE

AUSLEGESCHRIFTEDITORIAL

Int. Cl.:Int. Cl .:

BOIjBOIj

Deutsche Kl.: 12 g -17/32German class: 12 g -17/32

Nummer: 1 265 719Number: 1 265 719

Aktenzeichen: S 98656IV c/12 gFile number: S 98656IV c / 12 g

Anmeldetag: 5. August 1965Filing date: August 5, 1965

Auslegetag: 11. April 1968Open date: April 11, 1968

Die Erfindung bezieht sich auf ein Verfahren zum Aufbringen von Bor in gleichmäßiger Verteilung auf die Oberfläche eines erhitzten Halbleiterkörpers, wobei Boroxyd und Wasserdampf enthaltende Dämpfe dem erhitzten Halbleiterkörper zugeführt werden.The invention relates to a method for applying boron in a uniform distribution the surface of a heated semiconductor body, containing boron oxide and water vapor Vapors are fed to the heated semiconductor body.

Bei einem solchen bekannten Verfahren hat man Luft oder Sauerstoff bei hoher Temperatur über elementares Bor geleitet und so Boroxyd erzeugt. Die damit erzielbare Niederschlagsrate ist jedoch verhältnismäßig gering. Außerdem stört die hohe Betriebstemperatur; das gilt ganz besonders dann, wenn das Aufbringen der Dotierungssubstanz und das Diffundieren nicht gleichzeitig, sondern nacheinander in getrennten Verfahrensabschnitten durchgeführt werden soll, was besonders dann vorteilhaft ist, wenn man mehrere unterschiedlich wirkende Dotierungssubstanzen zunächst nacheinander auf die Oberfläche des Halbleiterkörpers aufbringt und später bei wesentlich höheren Temperaturen gleichzeitig eindiffundiert.In such a known method, air or oxygen is exposed at high temperature elemental boron and thus produced boron oxide. However, the precipitation rate that can be achieved is relatively low. In addition, the high operating temperature bothers; this is especially true when the application of the doping substance and the diffusion are not carried out simultaneously, but one after the other should be carried out in separate process sections, which is particularly advantageous is when you first have several different acting dopants on the Applies surface of the semiconductor body and later at much higher temperatures at the same time diffused.

Im Vergleich zu dem bekannten Verfahren liegt der Erfindung die Aufgabe zugrunde, die Niederschlagsrate zu erhöhen und die Betriebstemperatur des Verfahrens wesentlich herabzusetzen.In comparison to the known method, the invention is based on the object of the precipitation rate to increase and significantly lower the operating temperature of the process.

Das gelingt erfindungsgemäß dadurch, daß die Dämpfe aus einer wäßrigen Borsäurelösung erzeugt werden.This is achieved according to the invention in that the vapors are generated from an aqueous boric acid solution will.

Der Erfindung liegt dabei die Erkenntnis zugrunde, daß hierbei Bor und Wasser gleichzeitig und nicht nacheinander verdampfen. Die Erfindung ermöglicht eine Betriebstemperatur von etwa 1000C; lediglich die Halbleiterkörper müssen auf einer etwas höheren Temperatur gehalten werden, um eine Kondensation der Dämpfe an den Halbleiterkörpern zu verhindern. Die Dämpfe können mit Hilfe eines Trägergases, z. B. mit Stickstoff, über den Halbleiterkörper hinweggeführt werden.The invention is based on the knowledge that boron and water evaporate simultaneously and not one after the other. The invention enables an operating temperature of about 100 ° C .; only the semiconductor bodies have to be kept at a slightly higher temperature in order to prevent condensation of the vapors on the semiconductor bodies. The vapors can be extracted with the aid of a carrier gas, e.g. B. with nitrogen, are carried away over the semiconductor body.

Verfahren zum Aufbringen von Bor
auf einen HalbleiterkörperMethod of applying boron
on a semiconductor body

Anmelder:Applicant:

Siemens Aktiengesellschaft, Berlin und München, 8520 Erlangen, Werner-von-Siemens-Str. 50Siemens Aktiengesellschaft, Berlin and Munich, 8520 Erlangen, Werner-von-Siemens-Str. 50

Als Erfinder benannt:Named as inventor:

Dipl.-Chem. Dr. Norbert Schink, 8520 Erlangen; Dipl.-Phys. Dr. Wolfgang Weiske, 8000 MünchenDipl.-Chem. Dr. Norbert Schink, 8520 Erlangen; Dipl.-Phys. Dr. Wolfgang Weiske, 8000 Munich

Nach einem anderen bekannten Verfahren hat man auf die Halbleiterkörper eine Borverbindungen enthaltende Flüssigkeit aufgebracht. Damit läßt sich jedoch keine gleichmäßige Verteilung von Bor auf der Oberfläche der Halbleiterkörper erreichen.According to another known method, a boron compound is applied to the semiconductor body containing liquid applied. However, this does not allow a uniform distribution of boron reach the surface of the semiconductor body.

Claims (2)

Patentansprüche:Patent claims: 1. Verfahren zum Aufbringen von Bor in gleichmäßiger Verteilung auf die Oberfläche eines erhitzten Halbleiterkörpers, wobei Boroxyd und Wasserdampf enthaltende Dämpfe dem erhitzten Halbleiterkörper zugeführt werden, dadurch gekennzeichnet, daß die Dämpfe aus einer wäßrigen Borsäurelösung erzeugt werden.1. Method of applying boron in an even distribution on the surface of a heated semiconductor body, with vapors containing boron oxide and water vapor being heated Semiconductor bodies are supplied, characterized in that the vapors can be generated from an aqueous boric acid solution. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Halbleiterkörper auf einer Temperatur oberhalb von 1000C gehalten werden, während die Dämpfe über sie geleitet werden.2. The method according to claim 1, characterized in that the semiconductor bodies are kept at a temperature above 100 0 C while the vapors are passed over them. In Betracht gezogene Druckschriften:
Deutsche Auslegeschrift Nr. 1044 981.Considered publications:
German publication No. 1044 981.
DES98656A 1965-08-05 1965-08-05 Method for applying boron to a semiconductor body Pending DE1265719B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES98656A DE1265719B (en) 1965-08-05 1965-08-05 Method for applying boron to a semiconductor body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES98656A DE1265719B (en) 1965-08-05 1965-08-05 Method for applying boron to a semiconductor body

Publications (1)

Publication Number Publication Date
DE1265719B true DE1265719B (en) 1968-04-11

Family

ID=7521632

Family Applications (1)

Application Number Title Priority Date Filing Date
DES98656A Pending DE1265719B (en) 1965-08-05 1965-08-05 Method for applying boron to a semiconductor body

Country Status (1)

Country Link
DE (1) DE1265719B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1044981B (en) * 1956-10-24 1958-11-27 Siemens Ag Process for doping semiconductor bodies with boron

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1044981B (en) * 1956-10-24 1958-11-27 Siemens Ag Process for doping semiconductor bodies with boron

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