DE1150366B - Process for the production of hyperpure silicon - Google Patents
Process for the production of hyperpure siliconInfo
- Publication number
- DE1150366B DE1150366B DES60881A DES0060881A DE1150366B DE 1150366 B DE1150366 B DE 1150366B DE S60881 A DES60881 A DE S60881A DE S0060881 A DES0060881 A DE S0060881A DE 1150366 B DE1150366 B DE 1150366B
- Authority
- DE
- Germany
- Prior art keywords
- reaction vessel
- silicon
- reaction
- production
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 title claims description 8
- 239000010703 silicon Substances 0.000 title claims description 8
- 238000000034 method Methods 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000007789 gas Substances 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 239000011541 reaction mixture Substances 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 2
- 239000003638 chemical reducing agent Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Description
DEUTSCHESGERMAN
PATENTAMTPATENT OFFICE
S 60881 IVa/12 iS 60881 IVa / 12 i
BEKANNTMACHUNG
DER ANMELDUNG
UNDAUSGABEDER
AUSLEGESCHRIFT: 20. JUNI 1963NOTICE
THE REGISTRATION
ANDOUTPUTE
EDITORIAL: JUNE 20, 1963
Die Erfindung betrifft ein Verfahren zur Herstellung von Reinstsilicium, das als Grundmaterial für elektrische Halbleitergeräte geeignet ist, bei dem das Silicium durch chemische Umsetzung aus einer gasförmigen Verbindung mit Hilfe eines als Reduktionsmittel wirkenden Trägergases innerhalb eines mindestens teilweise durchsichtigen Reaktionsgefäßes aus Glas oder Quarz auf aus Silicium bestehenden Trägerstäben abgeschieden und die Temperatur des Reaktionsgefäßes während der Abscheidung zwischen etwa 300 und 8000C gehalten wird, nach Patent 1105 396. Es hat sich erwiesen, daß besonders bei größerem Gasdurchsatz unter Umständen die Zylinderwand bis unter die Mindesttemperatur abgekühlt werden kann. Dieser Nachteil wird erfindungsgemäß dadurch vermieden, daß das Reaktionsgasgemisch vor dem Eintritt in das Reaktionsgefäß vorgeheizt wird.The invention relates to a process for the production of high-purity silicon, which is suitable as a base material for electrical semiconductor devices, in which the silicon is converted from a gaseous compound by chemical conversion with the aid of a carrier gas acting as a reducing agent inside an at least partially transparent reaction vessel made of glass or quartz to silicon Existing support rods deposited and the temperature of the reaction vessel is kept between about 300 and 800 0 C during the deposition, according to patent 1105 396. It has been shown that, especially with a larger gas throughput, the cylinder wall can be cooled to below the minimum temperature under certain circumstances. According to the invention, this disadvantage is avoided in that the reaction gas mixture is preheated before it enters the reaction vessel.
Natürlich darf die Vorheizung nicht so stark sein, daß etwa die obere Grenze des erwähnten Temperaturbereiches überschritten wird.Of course, the preheating must not be so strong that about the upper limit of the temperature range mentioned is exceeded.
Die aus dem Reaktionsgefäß austretenden heißen Restgase können mittels eines Wärmeaustauschers zur Vorheizung des zugeführten Reaktionsgasgemisches verwendet werden. Die Vorheizung kann in einfacher Weise dadurch ausgeführt werden, daß das Zuleitungsrohr für das Reaktionsgemisch über eine ausreichende Länge durch das Austrittsrohr der heißen Restgase dem Reaktionsgefäß zugeführt wird. Zu diesem Zweck wird das Gaszuleitungsrohr zur besseren Wärmeübertragung vorteilhaft aus einem gut wärmeleitenden Material, beispielsweise Silber oder Kupfer, hergestellt. Das Gasaustrittsrohr wird gegen Wärmeabstrahlung nach außen isoliert.The hot residual gases emerging from the reaction vessel can be used by means of a heat exchanger Preheating of the supplied reaction gas mixture can be used. Preheating can be done in a simpler way Way are carried out in that the feed pipe for the reaction mixture has a sufficient Length through the outlet pipe of the hot residual gases is fed to the reaction vessel. To this The purpose of the gas supply pipe for better heat transfer is advantageously made of a pipe that conducts heat well Material, for example silver or copper, produced. The gas outlet pipe is against heat radiation insulated from the outside.
Das Gasgemisch kann ferner dadurch vorgeheizt werden, daß das Gaszuleitungsrohr vor dem Reaktionsgefäß über eine ausreichende Länge elektrisch geheizt oder durch einen Ofen geführt wird.The gas mixture can also be preheated by placing the gas feed pipe in front of the reaction vessel Is heated electrically over a sufficient length or passed through an oven.
Eine Anordnung, mit der das erfindungsgemäße Verfahren in einfacher Weise durchgeführt werden kann, ist in der Figur veranschaulicht. Der erforderliche Wasserstoff wird einer Gasflasche 1 über ein Absperrventil 2 und ein mehrstufiges Reduzierventil 3 sowie einem Gasdurchflußmesser 4 entnommen und der Gasverdampferanlage 5 zugeführt. Dort mischt er sich mit dem verdampften Reaktionsgas und wird dann durch das Gaszuleitungsrohr 6 über eine Düse 7, die eine trubulente Strömung erzeugt, zu den mit Verfahren zur Herstellung von ReinstsiliciumAn arrangement with which the method according to the invention can be carried out in a simple manner is illustrated in the figure. The required hydrogen is taken from a gas cylinder 1 via a shut-off valve 2 and a multi-stage reducing valve 3 as well as a gas flow meter 4 and fed to the gas evaporation system 5. There it mixes with the vaporized reaction gas and is then passed through the gas feed pipe 6 via a nozzle 7, which generates a turbulent flow, to the process for the production of hyperpure silicon
Zusatz zum Patent 1105 396Addendum to patent 1105 396
Anmelder:
Siemens-Schuckertwerke Aktiengesellschaft,Applicant:
Siemens-Schuckertwerke Aktiengesellschaft,
Berlin und Erlangen,
Erlangen, Werner-von-Siemens-Str. 50Berlin and Erlangen,
Erlangen, Werner-von-Siemens-Str. 50
Arno Kersting, Erlangen,Arno Kersting, Erlangen,
und Dr. phil. nat. Konrad Reuschel, Pretzfeld (OFr.), sind als Erfinder genannt wordenand Dr. phil. nat. Konrad Reuschel, Pretzfeld (O.r.), have been named as inventors
ao Hilfe einer Wechselspannungsquelle 8 beheizten Trägerstäben 9 geführt. Die Trägerstäbe sind in einem luftdicht abgeschlossenen Quarzzylinder 10 auf einer Graphithalterung 11 frei stehend angeordnet und an ihren oberen Enden durch eine Siliziumbrücke 12 stromleitend miteinander verbunden. Die verbrauchten Restgase treten durch das wärmeisolierte Austrittsrohr 13 aus und strömen in entgegengesetzter Richtung zum zugeführten Reaktionsgasgemisch am Gaszuleitungsrohr 6 entlang.ao the aid of an alternating voltage source 8 heated support rods 9 led. The support rods are in an airtight quartz cylinder 10 on a Graphite holder 11 arranged free-standing and at its upper ends by a silicon bridge 12 electrically connected to each other. The used residual gases pass through the thermally insulated outlet pipe 13 and flow in the opposite direction to the supplied reaction gas mixture on Gas supply pipe 6 along.
Claims (2)
1. Verfahren zur Herstellung von Reinstsilicium, bei dem das Silicium durch chemische Umsetzung aus einer gasförmigen Verbindung mit Hilfe eines als Reduktionsmittel wirkenden Trägergases innerhalb eines mindestens teilweise durchsichtigen Reaktionsgefäßes aus Glas oder Quarz auf aus Silicium bestehenden Trägerstäben abgeschieden und die Temperatur des Reaktionsgefäßes während der Abscheidung zwischen etwa 300 und 8000C gehalten wird, nach Patent 1105 396, dadurch gekennzeichnet, daß das Reaktionsgemisch vor dem Eintritt in das Reaktionsgefäß vorgeheizt wird.Patent claims:
1. A process for the production of hyperpure silicon, in which the silicon is deposited by chemical reaction from a gaseous compound with the aid of a carrier gas acting as a reducing agent within an at least partially transparent reaction vessel made of glass or quartz on support rods made of silicon and the temperature of the reaction vessel during the deposition is kept between about 300 and 800 0 C, according to patent 1105 396, characterized in that the reaction mixture is preheated before entering the reaction vessel.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES60881A DE1150366B (en) | 1958-12-09 | 1958-12-09 | Process for the production of hyperpure silicon |
| FR805169A FR76329E (en) | 1958-12-09 | 1959-09-15 | Process for the preparation of absolutely pure substances, in particular semiconductors |
| US853886A US3057690A (en) | 1958-12-09 | 1959-11-18 | Method for producing hyperpure silicon |
| BE585390A BE585390A (en) | 1958-12-09 | 1959-12-07 | Very high purity silicon manufacturing process. |
| GB41889/59A GB904239A (en) | 1958-12-09 | 1959-12-09 | Improvements in or relating to methods for producing ultra-pure silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES60881A DE1150366B (en) | 1958-12-09 | 1958-12-09 | Process for the production of hyperpure silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1150366B true DE1150366B (en) | 1963-06-20 |
Family
ID=7494447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES60881A Pending DE1150366B (en) | 1958-12-09 | 1958-12-09 | Process for the production of hyperpure silicon |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3057690A (en) |
| BE (1) | BE585390A (en) |
| DE (1) | DE1150366B (en) |
| GB (1) | GB904239A (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL233004A (en) * | 1954-05-18 | 1900-01-01 | ||
| NL277330A (en) * | 1961-04-22 | |||
| DE1138481C2 (en) * | 1961-06-09 | 1963-05-22 | Siemens Ag | Process for the production of semiconductor arrangements by single-crystal deposition of semiconductor material from the gas phase |
| DE1176102B (en) * | 1962-09-25 | 1964-08-20 | Siemens Ag | Process for the crucible-free production of gallium arsenide rods from gallium alkyls and arsenic compounds at low temperatures |
| US3523816A (en) * | 1967-10-27 | 1970-08-11 | Texas Instruments Inc | Method for producing pure silicon |
| US3610202A (en) * | 1969-05-23 | 1971-10-05 | Siemens Ag | Epitactic apparatus |
| US3757733A (en) * | 1971-10-27 | 1973-09-11 | Texas Instruments Inc | Radial flow reactor |
| US3900660A (en) * | 1972-08-21 | 1975-08-19 | Union Carbide Corp | Manufacture of silicon metal from a mixture of chlorosilanes |
| DE2912661C2 (en) * | 1979-03-30 | 1982-06-24 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Process for the deposition of pure semiconductor material and nozzle for carrying out the process |
| US4343772A (en) * | 1980-02-29 | 1982-08-10 | Nasa | Thermal reactor |
| US4457902A (en) * | 1980-10-24 | 1984-07-03 | Watson Keith R | High efficiency hydrocarbon reduction of silica |
| JPS61101410A (en) * | 1984-10-24 | 1986-05-20 | Hiroshi Ishizuka | Production of polycrystalline silicon and apparatus therefor |
| JP5959198B2 (en) * | 2008-04-14 | 2016-08-02 | ヘムロック・セミコンダクター・コーポレーション | Manufacturing apparatus for depositing materials and electrodes used in the apparatus |
| EP2266368B1 (en) * | 2008-04-14 | 2018-03-28 | Hemlock Semiconductor Operations LLC | Manufacturing apparatus for depositing a material on an electrode for use therein |
| JP2011517734A (en) * | 2008-04-14 | 2011-06-16 | ヘムロック・セミコンダクター・コーポレーション | Manufacturing apparatus for depositing materials and electrodes used in the apparatus |
| US8993056B2 (en) * | 2009-12-17 | 2015-03-31 | Savi Research, Inc. | Method of gas distribution and nozzle design in the improved chemical vapor deposition of polysilicon reactor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2441603A (en) * | 1943-07-28 | 1948-05-18 | Bell Telephone Labor Inc | Electrical translating materials and method of making them |
| GB787043A (en) * | 1954-09-15 | 1957-11-27 | Sylvania Electric Prod | Method for production of silicon |
-
1958
- 1958-12-09 DE DES60881A patent/DE1150366B/en active Pending
-
1959
- 1959-11-18 US US853886A patent/US3057690A/en not_active Expired - Lifetime
- 1959-12-07 BE BE585390A patent/BE585390A/en unknown
- 1959-12-09 GB GB41889/59A patent/GB904239A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3057690A (en) | 1962-10-09 |
| BE585390A (en) | 1960-06-07 |
| GB904239A (en) | 1962-08-22 |
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