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DE1152265B - Bimetal for doping semiconductor materials using a gold-boron alloy as base metal and process for its production - Google Patents

Bimetal for doping semiconductor materials using a gold-boron alloy as base metal and process for its production

Info

Publication number
DE1152265B
DE1152265B DED34544A DED0034544A DE1152265B DE 1152265 B DE1152265 B DE 1152265B DE D34544 A DED34544 A DE D34544A DE D0034544 A DED0034544 A DE D0034544A DE 1152265 B DE1152265 B DE 1152265B
Authority
DE
Germany
Prior art keywords
gold
bimetal
semiconductor materials
base metal
boron alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DED34544A
Other languages
German (de)
Inventor
Dr Eugen Duerrwaechter
Dr-Ing Karlernst Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Doduco Solutions GmbH
Original Assignee
Doduco GmbH and Co KG Dr Eugen Duerrwaechter
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NZ145533D priority Critical patent/NZ145533A/xx
Priority claimed from DED30764A external-priority patent/DE1101769B/en
Application filed by Doduco GmbH and Co KG Dr Eugen Duerrwaechter filed Critical Doduco GmbH and Co KG Dr Eugen Duerrwaechter
Priority to DED34544A priority patent/DE1152265B/en
Publication of DE1152265B publication Critical patent/DE1152265B/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D1/00—Demodulation of amplitude-modulated oscillations
    • H03D1/14—Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles
    • H03D1/18—Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles of semiconductor devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N11/00—Colour television systems
    • H04N11/06—Transmission systems characterised by the manner in which the individual colour picture signal components are combined
    • H04N11/12—Transmission systems characterised by the manner in which the individual colour picture signal components are combined using simultaneous signals only
    • H04N11/14—Transmission systems characterised by the manner in which the individual colour picture signal components are combined using simultaneous signals only in which one signal, modulated in phase and amplitude, conveys colour information and a second signal conveys brightness information, e.g. NTSC-system
    • H04N11/16—Transmission systems characterised by the manner in which the individual colour picture signal components are combined using simultaneous signals only in which one signal, modulated in phase and amplitude, conveys colour information and a second signal conveys brightness information, e.g. NTSC-system the chrominance signal alternating in phase, e.g. PAL-system
    • H04N11/165—Decoding means therefor
    • H10P95/00—

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Description

Anmelder:Applicant:

Dr. Eugen Dürrwächter DODUCO, Pforzheim, Westliche 61Dr. Eugen Dürrwächter DODUCO, Pforzheim, Westliche 61

Dr. Eugen DürrwächterDr. Eugen Dürrwächter

und Dr.-Ing. Karlernst Müller, Pforzheim, sind als Erfinder genannt wordenand Dr.-Ing. Karlernst Müller, Pforzheim, have been named as the inventor

rung, bestehend aus 0,1 bis weniger als 2% Bor, Rest Gold, nach Patent 1101769 als Grundmetall, dadurch gekennzeichnet, daß die die Benetzung des Halbleitermaterials fördernde Auflage aus einer Goldlegierung aus bis 0,5% Silicium, bis 1% Germanium, bis 1% Antimon, bis 4% Gallium, bis 5% Indium, bis 0,1% Blei, bis 0,1% Thallium und/oder bis 0,1% Zinn, Rest Gold besteht.tion, consisting of 0.1 to less than 2% boron, the remainder gold, according to patent 1101769 as the base metal, characterized in that the layer promoting the wetting of the semiconductor material is made of a gold alloy of up to 0.5% silicon, up to 1% germanium, up to 1% antimony, up to 4% gallium, up to 5% indium, up to 0.1% lead, up to 0.1% thallium and / or up to 0.1% tin, the remainder being gold.

2. Verfahren zur Herstellung eines Bimetalls nach Anspruch 1, dadurch gekennzeichnet, daß die zu verbindenden Legierungen unter sehr hohem Druck (3 bis 51) bei Temperaturen dicht unterhalb der eutektischen verschweißt und das Bimetall auf eine solche Schichtdicke der den Halbleiter benetzenden Goldlegierung abgewalzt wird, die die Dotierung des Halbleiters durch das Bor der Gold-Bor-Legierung nicht beeinträchtigt.2. A method for producing a bimetal according to claim 1, characterized in that the alloys to be joined under very high pressure (3 to 51) at temperatures tight welded below the eutectic and the bimetal to such a layer thickness of the Semiconductor wetting gold alloy is rolled, which the doping of the semiconductor through the Boron of the gold-boron alloy is not affected.

3. Verfahren nach "Anspruch 2, dadurch gekennzeichnet, daß die Verschweißung im Vakuum oder in neutraler bzw. reduzierender Atmosphäre erfolgt.3. The method according to "claim 2, characterized in that the welding in a vacuum or in a neutral or reducing atmosphere.

In Betracht gezogene Druckschriften: »Metall«, 14 (1960), H. 7, S. 726 bis 729; M. Hansen, »Constitution of Binary Alloys«,Considered publications: "Metall", 14 (1960), H. 7, pp. 726 to 729; M. Hansen, "Constitution of Binary Alloys",

2nd Editon, 1958, S. 204, 206, 210, 222, 230, 232 und 239.2 nd Editon, 1958, pp. 204, 206, 210, 222, 230, 232 and 239.

Claims (1)

PATENTANSPRÜCHE:PATENT CLAIMS: 1. Bimetall zur Dotierung von Halbleitermaterialien unter Verwendung einer Gold-Bor-Legie-Bimetall zur Dotierung1. Bimetal for doping semiconductor materials using a gold-boron alloy bimetal for doping von Halbleitermaterialien unter Verwendung einer Gold-Bor-Legierung als Grundmetall und Verfahren zu seiner Herstellungof semiconductor materials using a gold-boron alloy as the base metal and its method of manufacture Zusatz zum Patent 1101 769Addendum to patent 1101 769
DED34544A 1959-05-30 1960-10-18 Bimetal for doping semiconductor materials using a gold-boron alloy as base metal and process for its production Pending DE1152265B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
NZ145533D NZ145533A (en) 1960-10-18
DED34544A DE1152265B (en) 1959-05-30 1960-10-18 Bimetal for doping semiconductor materials using a gold-boron alloy as base metal and process for its production

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DED30764A DE1101769B (en) 1959-05-30 1959-05-30 Process for the production of gold-boron alloys and the use of these alloys for doping semiconductor materials
DED34544A DE1152265B (en) 1959-05-30 1960-10-18 Bimetal for doping semiconductor materials using a gold-boron alloy as base metal and process for its production

Publications (1)

Publication Number Publication Date
DE1152265B true DE1152265B (en) 1963-08-01

Family

ID=42299182

Family Applications (1)

Application Number Title Priority Date Filing Date
DED34544A Pending DE1152265B (en) 1959-05-30 1960-10-18 Bimetal for doping semiconductor materials using a gold-boron alloy as base metal and process for its production

Country Status (1)

Country Link
DE (1) DE1152265B (en)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

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