DE10207324B8 - Verfahren zum Herstellen akustischer Dünnfilmvolumenresonatoren (FBARs) mit unterschiedlichen Frequenzen auf dem gleichen Substrat durch ein Subtraktionsverfahren und Vorrichtung, die das Verfahren beinhaltet - Google Patents
Verfahren zum Herstellen akustischer Dünnfilmvolumenresonatoren (FBARs) mit unterschiedlichen Frequenzen auf dem gleichen Substrat durch ein Subtraktionsverfahren und Vorrichtung, die das Verfahren beinhaltet Download PDFInfo
- Publication number
- DE10207324B8 DE10207324B8 DE10207324A DE10207324A DE10207324B8 DE 10207324 B8 DE10207324 B8 DE 10207324B8 DE 10207324 A DE10207324 A DE 10207324A DE 10207324 A DE10207324 A DE 10207324A DE 10207324 B8 DE10207324 B8 DE 10207324B8
- Authority
- DE
- Germany
- Prior art keywords
- fbar
- resonators
- thin film
- different frequencies
- same substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0471—Resonance frequency of a plurality of resonators at different frequencies
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/799,205 US6874211B2 (en) | 2001-03-05 | 2001-03-05 | Method for producing thin film bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method |
| US09/799,205 | 2001-03-05 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE10207324A1 DE10207324A1 (de) | 2002-09-26 |
| DE10207324B4 DE10207324B4 (de) | 2009-04-09 |
| DE10207324B8 true DE10207324B8 (de) | 2009-07-30 |
Family
ID=25175291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10207324A Expired - Fee Related DE10207324B8 (de) | 2001-03-05 | 2002-02-21 | Verfahren zum Herstellen akustischer Dünnfilmvolumenresonatoren (FBARs) mit unterschiedlichen Frequenzen auf dem gleichen Substrat durch ein Subtraktionsverfahren und Vorrichtung, die das Verfahren beinhaltet |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6874211B2 (de) |
| JP (1) | JP4008265B2 (de) |
| DE (1) | DE10207324B8 (de) |
Families Citing this family (88)
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|---|---|---|---|---|
| US6853994B1 (en) * | 2000-08-30 | 2005-02-08 | International Business Machines Corporation | Object oriented based, business class methodology for performing data metric analysis |
| EP1816233B1 (de) * | 2001-05-22 | 2008-12-17 | Infineon Technologies AG | Verfahren zur Herstellung einer Schicht mit einem vorgegebenen Schichtdickenprofil |
| US7522018B2 (en) * | 2002-12-13 | 2009-04-21 | Nxp B.V. | Electro-acoustic resonator with a top electrode layer thinner than a bottom electrode layer |
| US7275292B2 (en) | 2003-03-07 | 2007-10-02 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method for fabricating an acoustical resonator on a substrate |
| US20040189424A1 (en) * | 2003-03-31 | 2004-09-30 | Hula David W. | FBAR mass loading process using selective dry etching |
| FR2853473B1 (fr) * | 2003-04-01 | 2005-07-01 | St Microelectronics Sa | Composant electronique comprenant un resonateur et procede de fabrication |
| EP1489740A3 (de) * | 2003-06-18 | 2006-06-28 | Matsushita Electric Industrial Co., Ltd. | Elektronisches Bauelement und Verfahren zur Herstellung desselben |
| US7358831B2 (en) * | 2003-10-30 | 2008-04-15 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator (FBAR) devices with simplified packaging |
| EP1528677B1 (de) | 2003-10-30 | 2006-05-10 | Agilent Technologies, Inc. | Akustisch gekoppelter Dünnschicht-Transformator mit zwei piezoelektrischen Elementen, welche entgegengesetzte C-Axen Orientierung besitzten |
| US7400217B2 (en) * | 2003-10-30 | 2008-07-15 | Avago Technologies Wireless Ip Pte Ltd | Decoupled stacked bulk acoustic resonator band-pass filter with controllable pass bandwith |
| US7019605B2 (en) * | 2003-10-30 | 2006-03-28 | Larson Iii John D | Stacked bulk acoustic resonator band-pass filter with controllable pass bandwidth |
| US6946928B2 (en) * | 2003-10-30 | 2005-09-20 | Agilent Technologies, Inc. | Thin-film acoustically-coupled transformer |
| US20050248420A1 (en) * | 2004-05-07 | 2005-11-10 | Qing Ma | Forming integrated plural frequency band film bulk acoustic resonators |
| US7161448B2 (en) * | 2004-06-14 | 2007-01-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancements using recessed region |
| US7615833B2 (en) | 2004-07-13 | 2009-11-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator package and method of fabricating same |
| US7388454B2 (en) * | 2004-10-01 | 2008-06-17 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using alternating frame structure |
| US8981876B2 (en) * | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
| US7202560B2 (en) | 2004-12-15 | 2007-04-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Wafer bonding of micro-electro mechanical systems to active circuitry |
| US7791434B2 (en) | 2004-12-22 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
| JP4529889B2 (ja) | 2005-02-10 | 2010-08-25 | セイコーエプソン株式会社 | 圧電振動体、圧電振動体の調整方法、圧電アクチュエータ、時計、電子機器 |
| US7427819B2 (en) * | 2005-03-04 | 2008-09-23 | Avago Wireless Ip Pte Ltd | Film-bulk acoustic wave resonator with motion plate and method |
| US20060220763A1 (en) * | 2005-03-31 | 2006-10-05 | Tomohiro Iwasaki | Acoustic mirror type thin film bulk acoustic resonator, and filter, duplexer and communication apparatus comprising the same |
| US7369013B2 (en) * | 2005-04-06 | 2008-05-06 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using filled recessed region |
| US7436269B2 (en) | 2005-04-18 | 2008-10-14 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustically coupled resonators and method of making the same |
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| US7934884B2 (en) * | 2005-04-27 | 2011-05-03 | Lockhart Industries, Inc. | Ring binder cover |
| JPWO2007000929A1 (ja) | 2005-06-29 | 2009-01-22 | パナソニック株式会社 | 圧電共振器、圧電フィルタ、それを用いた共用器及び通信機器 |
| US7443269B2 (en) * | 2005-07-27 | 2008-10-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method and apparatus for selectively blocking radio frequency (RF) signals in a radio frequency (RF) switching circuit |
| US7868522B2 (en) | 2005-09-09 | 2011-01-11 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Adjusted frequency temperature coefficient resonator |
| US7391286B2 (en) * | 2005-10-06 | 2008-06-24 | Avago Wireless Ip Pte Ltd | Impedance matching and parasitic capacitor resonance of FBAR resonators and coupled filters |
| US7737807B2 (en) | 2005-10-18 | 2010-06-15 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators |
| US7675390B2 (en) * | 2005-10-18 | 2010-03-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator |
| US7525398B2 (en) * | 2005-10-18 | 2009-04-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustically communicating data signals across an electrical isolation barrier |
| US7423503B2 (en) * | 2005-10-18 | 2008-09-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating film acoustically-coupled transformer |
| US7425787B2 (en) * | 2005-10-18 | 2008-09-16 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating single insulated decoupled stacked bulk acoustic resonator with acoustically-resonant electrical insulator |
| US7463499B2 (en) * | 2005-10-31 | 2008-12-09 | Avago Technologies General Ip (Singapore) Pte Ltd. | AC-DC power converter |
| US7561009B2 (en) * | 2005-11-30 | 2009-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator (FBAR) devices with temperature compensation |
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| US20070210748A1 (en) * | 2006-03-09 | 2007-09-13 | Mark Unkrich | Power supply and electronic device having integrated power supply |
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| US20090079514A1 (en) * | 2007-09-24 | 2009-03-26 | Tiberiu Jamneala | Hybrid acoustic resonator-based filters |
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| US10038422B2 (en) | 2016-08-25 | 2018-07-31 | Qualcomm Incorporated | Single-chip multi-frequency film bulk acoustic-wave resonators |
| EP3506501B1 (de) * | 2017-12-07 | 2021-06-09 | Infineon Technologies AG | Bandsperrfilter basierend auf gekoppelten akustischen resonatoren |
| DE102018109974B3 (de) * | 2018-04-25 | 2019-09-12 | RF360 Europe GmbH | Elektroakustisches Filter, Multiplexer und Verfahren zur Herstellung eines elektroakustischen Filters |
| US12021496B2 (en) * | 2020-08-31 | 2024-06-25 | Murata Manufacturing Co., Ltd. | Resonators with different membrane thicknesses on the same die |
| CN112913141B (zh) * | 2018-10-23 | 2024-01-16 | 华为技术有限公司 | 单片集成baw谐振器制作方法 |
| CN112217493B (zh) * | 2019-07-10 | 2024-08-09 | 开元通信技术（厦门）有限公司 | 体声波滤波器及其制作方法 |
| JP2022023003A (ja) * | 2020-07-07 | 2022-02-07 | 三星電子株式会社 | 光変調素子、ビームステアリング装置、及び電子装置 |
| CN114006602A (zh) * | 2021-10-29 | 2022-02-01 | 北京航天微电科技有限公司 | 一种同芯集成的体声波双工器、制备方法和电子设备 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2859346A (en) * | 1954-07-28 | 1958-11-04 | Motorola Inc | Crystal oscillator |
| US5894647A (en) * | 1997-06-30 | 1999-04-20 | Tfr Technologies, Inc. | Method for fabricating piezoelectric resonators and product |
| EP0973256A1 (de) * | 1998-01-16 | 2000-01-19 | Mitsubishi Denki Kabushiki Kaisha | Piezoelektrische dünnschichtanordnung |
| US6060818A (en) * | 1998-06-02 | 2000-05-09 | Hewlett-Packard Company | SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters |
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| US3222622A (en) * | 1962-08-14 | 1965-12-07 | Clevite Corp | Wave filter comprising piezoelectric wafer electroded to define a plurality of resonant regions independently operable without significant electro-mechanical interaction |
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2001
- 2001-03-05 US US09/799,205 patent/US6874211B2/en not_active Expired - Lifetime
-
2002
- 2002-02-21 DE DE10207324A patent/DE10207324B8/de not_active Expired - Fee Related
- 2002-03-04 JP JP2002057313A patent/JP4008265B2/ja not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2859346A (en) * | 1954-07-28 | 1958-11-04 | Motorola Inc | Crystal oscillator |
| US5894647A (en) * | 1997-06-30 | 1999-04-20 | Tfr Technologies, Inc. | Method for fabricating piezoelectric resonators and product |
| EP0973256A1 (de) * | 1998-01-16 | 2000-01-19 | Mitsubishi Denki Kabushiki Kaisha | Piezoelektrische dünnschichtanordnung |
| US6060818A (en) * | 1998-06-02 | 2000-05-09 | Hewlett-Packard Company | SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002359534A (ja) | 2002-12-13 |
| DE10207324B4 (de) | 2009-04-09 |
| US6874211B2 (en) | 2005-04-05 |
| DE10207324A1 (de) | 2002-09-26 |
| JP4008265B2 (ja) | 2007-11-14 |
| US20020121499A1 (en) | 2002-09-05 |
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