|
US6210128B1
(en)
*
|
1999-04-16 |
2001-04-03 |
The United States Of America As Represented By The Secretary Of The Navy |
Fluidic drive for miniature acoustic fluidic pumps and mixers
|
|
JP3651348B2
(ja)
*
|
1999-05-24 |
2005-05-25 |
株式会社村田製作所 |
圧電素子
|
|
US6339276B1
(en)
*
|
1999-11-01 |
2002-01-15 |
Agere Systems Guardian Corp. |
Incremental tuning process for electrical resonators based on mechanical motion
|
|
US6746577B1
(en)
|
1999-12-16 |
2004-06-08 |
Agere Systems, Inc. |
Method and apparatus for thickness control and reproducibility of dielectric film deposition
|
|
US6524971B1
(en)
|
1999-12-17 |
2003-02-25 |
Agere Systems, Inc. |
Method of deposition of films
|
|
US7296329B1
(en)
|
2000-02-04 |
2007-11-20 |
Agere Systems Inc. |
Method of isolation for acoustic resonator device
|
|
US6437667B1
(en)
|
2000-02-04 |
2002-08-20 |
Agere Systems Guardian Corp. |
Method of tuning thin film resonator filters by removing or adding piezoelectric material
|
|
US6377136B1
(en)
|
2000-02-04 |
2002-04-23 |
Agere Systems Guardian Corporation |
Thin film resonator filter having at least one component with different resonant frequency sets or electrode capacitance
|
|
US6306313B1
(en)
|
2000-02-04 |
2001-10-23 |
Agere Systems Guardian Corp. |
Selective etching of thin films
|
|
US6323744B1
(en)
|
2000-02-04 |
2001-11-27 |
Agere Systems Guardian Corp. |
Grounding of TFR ladder filters
|
|
JP3514207B2
(ja)
*
|
2000-03-15 |
2004-03-31 |
株式会社村田製作所 |
強誘電体薄膜素子ならびにセンサ、および強誘電体薄膜素子の製造方法
|
|
US6494567B2
(en)
*
|
2000-03-24 |
2002-12-17 |
Seiko Epson Corporation |
Piezoelectric element and manufacturing method and manufacturing device thereof
|
|
JP2003530750A
(ja)
*
|
2000-04-06 |
2003-10-14 |
コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ |
共振器を有するチューニング可能なフィルタ構成
|
|
US6709776B2
(en)
|
2000-04-27 |
2004-03-23 |
Tdk Corporation |
Multilayer thin film and its fabrication process as well as electron device
|
|
US6396094B1
(en)
*
|
2000-05-12 |
2002-05-28 |
Agilent Technologies, Inc. |
Oriented rhombohedral composition of PbZr1-xTixO3 thin films for low voltage operation ferroelectric RAM
|
|
US6603241B1
(en)
|
2000-05-23 |
2003-08-05 |
Agere Systems, Inc. |
Acoustic mirror materials for acoustic devices
|
|
JP3796394B2
(ja)
*
|
2000-06-21 |
2006-07-12 |
キヤノン株式会社 |
圧電素子の製造方法および液体噴射記録ヘッドの製造方法
|
|
US6761835B2
(en)
*
|
2000-07-07 |
2004-07-13 |
Tdk Corporation |
Phosphor multilayer and EL panel
|
|
US6355498B1
(en)
|
2000-08-11 |
2002-03-12 |
Agere Systems Guartian Corp. |
Thin film resonators fabricated on membranes created by front side releasing
|
|
US6868288B2
(en)
|
2000-08-26 |
2005-03-15 |
Medtronic, Inc. |
Implanted medical device telemetry using integrated thin film bulk acoustic resonator filtering
|
|
US6486751B1
(en)
|
2000-09-26 |
2002-11-26 |
Agere Systems Inc. |
Increased bandwidth thin film resonator having a columnar structure
|
|
US6674291B1
(en)
|
2000-10-30 |
2004-01-06 |
Agere Systems Guardian Corp. |
Method and apparatus for determining and/or improving high power reliability in thin film resonator devices, and a thin film resonator device resultant therefrom
|
|
US6587212B1
(en)
|
2000-10-31 |
2003-07-01 |
Agere Systems Inc. |
Method and apparatus for studying vibrational modes of an electro-acoustic device
|
|
US6743731B1
(en)
*
|
2000-11-17 |
2004-06-01 |
Agere Systems Inc. |
Method for making a radio frequency component and component produced thereby
|
|
JP5019247B2
(ja)
*
|
2000-11-24 |
2012-09-05 |
Tdk株式会社 |
電子デバイス用基板
|
|
KR100398363B1
(ko)
*
|
2000-12-05 |
2003-09-19 |
삼성전기주식회사 |
Fbar 소자 및 그 제조방법
|
|
US6424237B1
(en)
*
|
2000-12-21 |
2002-07-23 |
Agilent Technologies, Inc. |
Bulk acoustic resonator perimeter reflection system
|
|
US6515402B2
(en)
*
|
2001-01-24 |
2003-02-04 |
Koninklijke Philips Electronics N.V. |
Array of ultrasound transducers
|
|
JP4282245B2
(ja)
*
|
2001-01-31 |
2009-06-17 |
富士通株式会社 |
容量素子及びその製造方法並びに半導体装置
|
|
US7435613B2
(en)
*
|
2001-02-12 |
2008-10-14 |
Agere Systems Inc. |
Methods of fabricating a membrane with improved mechanical integrity
|
|
US6821647B2
(en)
*
|
2001-04-19 |
2004-11-23 |
Tdk Corporation |
Phosphor thin film preparation method, and EL panel
|
|
US7005198B2
(en)
*
|
2001-04-19 |
2006-02-28 |
The Westaim Corporation |
Phosphor thin film, preparation method, and EL panel
|
|
JP3953315B2
(ja)
*
|
2001-12-26 |
2007-08-08 |
宇部興産株式会社 |
窒化アルミニウム薄膜−金属電極積層体およびそれを用いた薄膜圧電共振子
|
|
KR100865652B1
(ko)
*
|
2001-05-11 |
2008-10-29 |
우베 고산 가부시키가이샤 |
압전 박막 공진자
|
|
US6925001B2
(en)
*
|
2001-06-28 |
2005-08-02 |
Sharp Laboratories Of America, Inc. |
Electrically programmable resistance cross point memory sensing method
|
|
US6693821B2
(en)
*
|
2001-06-28 |
2004-02-17 |
Sharp Laboratories Of America, Inc. |
Low cross-talk electrically programmable resistance cross point memory
|
|
JP2003055651A
(ja)
*
|
2001-08-10 |
2003-02-26 |
Tdk Corp |
蛍光体薄膜およびelパネル
|
|
EP1419577A1
(de)
*
|
2001-08-14 |
2004-05-19 |
Koninklijke Philips Electronics N.V. |
Filteranordnung mit volumenwellen-resonator
|
|
JP3944372B2
(ja)
|
2001-09-21 |
2007-07-11 |
株式会社東芝 |
圧電薄膜振動子及びこれを用いた周波数可変共振器
|
|
JP2003163566A
(ja)
*
|
2001-11-22 |
2003-06-06 |
Toshiba Corp |
薄膜圧電共振器及びその製造方法
|
|
US6781304B2
(en)
*
|
2002-01-21 |
2004-08-24 |
Tdk Corporation |
EL panel
|
|
JP2003301171A
(ja)
*
|
2002-02-06 |
2003-10-21 |
Tdk Corp |
蛍光体薄膜、その製造方法およびelパネル
|
|
JP3830843B2
(ja)
*
|
2002-03-28 |
2006-10-11 |
株式会社東芝 |
薄膜圧電共振子
|
|
JP4215717B2
(ja)
|
2002-07-19 |
2009-01-28 |
シーメンス アクチエンゲゼルシヤフト |
物質を検出する装置および物質を検出する方法
|
|
US6828713B2
(en)
*
|
2002-07-30 |
2004-12-07 |
Agilent Technologies, Inc |
Resonator with seed layer
|
|
US6894360B2
(en)
*
|
2002-07-30 |
2005-05-17 |
Agilent Technologies, Inc. |
Electrostatic discharge protection of thin-film resonators
|
|
WO2004015862A2
(en)
*
|
2002-08-13 |
2004-02-19 |
Trikon Technologies Limited |
Acoustic resonators
|
|
US6944922B2
(en)
*
|
2002-08-13 |
2005-09-20 |
Trikon Technologies Limited |
Method of forming an acoustic resonator
|
|
JP4457587B2
(ja)
|
2002-09-05 |
2010-04-28 |
セイコーエプソン株式会社 |
電子デバイス用基体の製造方法及び電子デバイスの製造方法
|
|
US7275292B2
(en)
*
|
2003-03-07 |
2007-10-02 |
Avago Technologies Wireless Ip (Singapore) Pte. Ltd. |
Method for fabricating an acoustical resonator on a substrate
|
|
JP2004297359A
(ja)
*
|
2003-03-26 |
2004-10-21 |
Seiko Epson Corp |
表面弾性波素子、周波数フィルタ、発振器、電子回路、及び電子機器
|
|
JP3999156B2
(ja)
*
|
2003-03-31 |
2007-10-31 |
日本碍子株式会社 |
圧電/電歪膜型素子及び圧電/電歪磁器組成物
|
|
US7098575B2
(en)
*
|
2003-04-21 |
2006-08-29 |
Hrl Laboratories, Llc |
BAW device and method for switching a BAW device
|
|
JP4449371B2
(ja)
*
|
2003-09-01 |
2010-04-14 |
セイコーエプソン株式会社 |
薄膜圧電共振器
|
|
JP2005150694A
(ja)
*
|
2003-10-23 |
2005-06-09 |
Seiko Epson Corp |
圧電体膜、圧電素子、圧電アクチュエーター、圧電ポンプ、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、薄膜圧電共振子、周波数フィルタ、発振器、電子回路、および電子機器
|
|
JP2005166781A
(ja)
*
|
2003-12-01 |
2005-06-23 |
Seiko Epson Corp |
圧電体デバイス及び液体吐出ヘッド並びにこれらの製造方法、薄膜形成装置。
|
|
US20050148065A1
(en)
*
|
2003-12-30 |
2005-07-07 |
Intel Corporation |
Biosensor utilizing a resonator having a functionalized surface
|
|
JP2005251843A
(ja)
*
|
2004-03-02 |
2005-09-15 |
Nec Electronics Corp |
半導体装置、その製造方法及び記憶装置
|
|
JP4365712B2
(ja)
*
|
2004-03-25 |
2009-11-18 |
富士通株式会社 |
半導体装置の製造方法
|
|
JP2005294452A
(ja)
*
|
2004-03-31 |
2005-10-20 |
Fujitsu Ltd |
薄膜積層体、その薄膜積層体を用いたアクチュエータ素子、フィルター素子、強誘電体メモリ、および光偏向素子
|
|
US20050230724A1
(en)
*
|
2004-04-16 |
2005-10-20 |
Sharp Laboratories Of America, Inc. |
3D cross-point memory array with shared connections
|
|
US8082640B2
(en)
|
2004-08-31 |
2011-12-27 |
Canon Kabushiki Kaisha |
Method for manufacturing a ferroelectric member element structure
|
|
US7388454B2
(en)
*
|
2004-10-01 |
2008-06-17 |
Avago Technologies Wireless Ip Pte Ltd |
Acoustic resonator performance enhancement using alternating frame structure
|
|
US8981876B2
(en)
|
2004-11-15 |
2015-03-17 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Piezoelectric resonator structures and electrical filters having frame elements
|
|
US7202560B2
(en)
|
2004-12-15 |
2007-04-10 |
Avago Technologies Wireless Ip (Singapore) Pte. Ltd. |
Wafer bonding of micro-electro mechanical systems to active circuitry
|
|
US7791434B2
(en)
*
|
2004-12-22 |
2010-09-07 |
Avago Technologies Wireless Ip (Singapore) Pte. Ltd. |
Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
|
|
JP5164052B2
(ja)
*
|
2005-01-19 |
2013-03-13 |
キヤノン株式会社 |
圧電体素子、液体吐出ヘッド及び液体吐出装置
|
|
JP2006289520A
(ja)
*
|
2005-04-06 |
2006-10-26 |
Toshiba Corp |
Mems技術を使用した半導体装置
|
|
US7369013B2
(en)
*
|
2005-04-06 |
2008-05-06 |
Avago Technologies Wireless Ip Pte Ltd |
Acoustic resonator performance enhancement using filled recessed region
|
|
US7998362B2
(en)
*
|
2005-08-23 |
2011-08-16 |
Canon Kabushiki Kaisha |
Piezoelectric substance, piezoelectric element, liquid discharge head using piezoelectric element, liquid discharge apparatus, and production method of piezoelectric element
|
|
JP5041765B2
(ja)
*
|
2005-09-05 |
2012-10-03 |
キヤノン株式会社 |
エピタキシャル酸化物膜、圧電膜、圧電膜素子、圧電膜素子を用いた液体吐出ヘッド及び液体吐出装置
|
|
US7737807B2
(en)
*
|
2005-10-18 |
2010-06-15 |
Avago Technologies Wireless Ip (Singapore) Pte. Ltd. |
Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators
|
|
US7746677B2
(en)
*
|
2006-03-09 |
2010-06-29 |
Avago Technologies Wireless Ip (Singapore) Pte. Ltd. |
AC-DC converter circuit and power supply
|
|
US20070210724A1
(en)
*
|
2006-03-09 |
2007-09-13 |
Mark Unkrich |
Power adapter and DC-DC converter having acoustic transformer
|
|
US20070210748A1
(en)
*
|
2006-03-09 |
2007-09-13 |
Mark Unkrich |
Power supply and electronic device having integrated power supply
|
|
US7479685B2
(en)
*
|
2006-03-10 |
2009-01-20 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Electronic device on substrate with cavity and mitigated parasitic leakage path
|
|
JP5102459B2
(ja)
*
|
2006-03-31 |
2012-12-19 |
京セラ株式会社 |
圧電アクチュエータユニット
|
|
JP5311775B2
(ja)
*
|
2006-07-14 |
2013-10-09 |
キヤノン株式会社 |
圧電体素子、インクジェットヘッド及び圧電体素子の製造方法
|
|
US7984977B2
(en)
|
2006-07-14 |
2011-07-26 |
Canon Kabushiki Kaisha |
Piezoelectric element, manufacturing method for piezoelectric body, and liquid jet head
|
|
US7874649B2
(en)
|
2006-07-14 |
2011-01-25 |
Canon Kabushiki Kaisha |
Piezoelectric element, ink jet head and producing method for piezoelectric element
|
|
JP5300184B2
(ja)
*
|
2006-07-18 |
2013-09-25 |
キヤノン株式会社 |
圧電体、圧電体素子、圧電体素子を用いた液体吐出ヘッド及び液体吐出装置
|
|
JP5127268B2
(ja)
*
|
2007-03-02 |
2013-01-23 |
キヤノン株式会社 |
圧電体、圧電体素子、圧電体素子を用いた液体吐出ヘッド及び液体吐出装置
|
|
JP2008258575A
(ja)
*
|
2007-03-15 |
2008-10-23 |
Seiko Epson Corp |
圧電素子、液体噴射ヘッド、および、プリンタ
|
|
US7915794B2
(en)
*
|
2007-11-15 |
2011-03-29 |
Sony Corporation |
Piezoelectric device having a tension stress, and angular velocity sensor
|
|
US7732977B2
(en)
*
|
2008-04-30 |
2010-06-08 |
Avago Technologies Wireless Ip (Singapore) |
Transceiver circuit for film bulk acoustic resonator (FBAR) transducers
|
|
BRPI0822814A8
(pt)
*
|
2008-06-26 |
2016-01-05 |
Soc Tech Michelin |
Dispositivo piezoelétrico, e, método para preservar a funcionalidade do dispositivo piezoelétrico na presença de rachaduras induzidas por tensão
|
|
KR20110036889A
(ko)
*
|
2008-06-27 |
2011-04-12 |
파나소닉 주식회사 |
압전체 소자와 그 제조 방법
|
|
JP2010228266A
(ja)
*
|
2009-03-26 |
2010-10-14 |
Seiko Epson Corp |
液体噴射ヘッド及び液体噴射装置並びにアクチュエーター
|
|
JP2010241021A
(ja)
*
|
2009-04-07 |
2010-10-28 |
Seiko Epson Corp |
液体噴射ヘッド及び液体噴射装置並びにアクチュエーター
|
|
US8248185B2
(en)
*
|
2009-06-24 |
2012-08-21 |
Avago Technologies Wireless Ip (Singapore) Pte. Ltd. |
Acoustic resonator structure comprising a bridge
|
|
US8902023B2
(en)
*
|
2009-06-24 |
2014-12-02 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Acoustic resonator structure having an electrode with a cantilevered portion
|
|
US8193877B2
(en)
*
|
2009-11-30 |
2012-06-05 |
Avago Technologies Wireless Ip (Singapore) Pte. Ltd. |
Duplexer with negative phase shifting circuit
|
|
US8796904B2
(en)
|
2011-10-31 |
2014-08-05 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
|
|
US9243316B2
(en)
|
2010-01-22 |
2016-01-26 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Method of fabricating piezoelectric material with selected c-axis orientation
|
|
JP5676148B2
(ja)
*
|
2010-06-01 |
2015-02-25 |
日本碍子株式会社 |
結晶配向セラミックス複合体及び圧電/電歪素子
|
|
DE102010050275A1
(de)
*
|
2010-11-02 |
2012-05-03 |
Degudent Gmbh |
Lithiumsilikat-Gläser oder -Glaskeramiken, Verfahren zu deren Herstellung sowie deren Verwendung
|
|
US8962443B2
(en)
|
2011-01-31 |
2015-02-24 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Semiconductor device having an airbridge and method of fabricating the same
|
|
US9154112B2
(en)
|
2011-02-28 |
2015-10-06 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Coupled resonator filter comprising a bridge
|
|
US9083302B2
(en)
|
2011-02-28 |
2015-07-14 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
|
|
US9203374B2
(en)
|
2011-02-28 |
2015-12-01 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Film bulk acoustic resonator comprising a bridge
|
|
US9048812B2
(en)
|
2011-02-28 |
2015-06-02 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
|
|
US9136818B2
(en)
|
2011-02-28 |
2015-09-15 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Stacked acoustic resonator comprising a bridge
|
|
US9148117B2
(en)
|
2011-02-28 |
2015-09-29 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Coupled resonator filter comprising a bridge and frame elements
|
|
US9425764B2
(en)
|
2012-10-25 |
2016-08-23 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Accoustic resonator having composite electrodes with integrated lateral features
|
|
US8575820B2
(en)
|
2011-03-29 |
2013-11-05 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Stacked bulk acoustic resonator
|
|
US9444426B2
(en)
|
2012-10-25 |
2016-09-13 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Accoustic resonator having integrated lateral feature and temperature compensation feature
|
|
US8350445B1
(en)
|
2011-06-16 |
2013-01-08 |
Avago Technologies Wireless Ip (Singapore) Pte. Ltd. |
Bulk acoustic resonator comprising non-piezoelectric layer and bridge
|
|
US8922302B2
(en)
|
2011-08-24 |
2014-12-30 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Acoustic resonator formed on a pedestal
|
|
JP5711632B2
(ja)
*
|
2011-08-29 |
2015-05-07 |
富士通株式会社 |
記憶装置及び記憶装置の製造方法
|
|
WO2014130119A2
(en)
|
2012-11-30 |
2014-08-28 |
Quest Integrated, Inc. |
Method of growth of lead zirconate titanate single crystals
|
|
JP6347086B2
(ja)
*
|
2014-02-18 |
2018-06-27 |
アドバンストマテリアルテクノロジーズ株式会社 |
強誘電体セラミックス
|
|
JP6365126B2
(ja)
*
|
2014-08-29 |
2018-08-01 |
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|
|
CN104614099B
(zh)
*
|
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|
|
JP6956716B2
(ja)
*
|
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|
|
JP2017098781A
(ja)
*
|
2015-11-25 |
2017-06-01 |
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|
|
CN105784222B
(zh)
*
|
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|
|
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(ja)
*
|
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モータ
|
|
US11495670B2
(en)
|
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|
|
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(de)
*
|
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|
|
US11785854B2
(en)
|
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|
|
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(de)
*
|
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|
|
JP6498821B1
(ja)
*
|
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|
|
KR102115301B1
(ko)
*
|
2019-03-18 |
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|
|
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(ja)
|
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|