DE102024203618A1 - METHOD FOR PRODUCING A COMPONENT FOR A LITHOGRAPHY SYSTEM - Google Patents

Abstract

Method for producing a component (200) for a lithography system (1), wherein the component (200) has an outer surface (212) and one or more internal cavities (204) with an inner surface (214), comprising the steps:
a) determining (S2) a first weight (G1) of the component (200),
b) removing (S3) a material (218) of the component (200) on its outer and inner surface (212, 214) in a liquid bath (308),
c) determining (S4) a second weight (G2) of the component (200'), and
d) determining (S5) a thickness (d) of the material removal (218) based on the first and second determined weights (G1, G2) of the component (200, 200').

Description

The present invention relates to a method for producing a component for a lithography system.

Microlithography is used to produce microstructured components, such as integrated circuits. The microlithography process is carried out using a lithography system that has an illumination system and a projection system. The image of a mask (reticle) illuminated by the illumination system is projected by the projection system onto a substrate, such as a silicon wafer, that is coated with a light-sensitive layer (photoresist) and arranged in the image plane of the projection system in order to transfer the mask structure onto the light-sensitive coating of the substrate.

Driven by the pursuit of ever smaller structures in the manufacture of integrated circuits, EUV lithography systems are currently being developed that use light with a wavelength in the range of 0.1 nm to 30 nm, in particular 13.5 nm. Since most materials absorb light of this wavelength, such EUV lithography systems must use reflective optics, i.e. mirrors, instead of - as previously - refractive optics, i.e. lenses.

One problem that arises is that the mirrors heat up as a result of absorption of the radiation emitted by the EUV light source. This can lead to thermal deformation of the mirrors and thus to an impairment of the imaging properties of the mirrors.

Therefore, mirrors of an EUV lithography system are usually actively cooled if necessary. For example, a mirror carrier has a heat sink with cooling channels through which a cooling liquid is passed. It is desirable to be able to manufacture such carriers and other components of the lithography system in a simple manner.

Against this background, it is an object of the present invention to provide an improved method for producing a component of a lithography system.

1. a) Ermitteln eines ersten Gewichts des Bauteils,
2. b) Abtragen eines Materials des Bauteils an seiner Außen- und Innenfläche in einem Flüssigkeitsbad,
3. c) Ermitteln eines zweiten Gewichts des Bauteils, und
4. d) Ermitteln einer Dicke des Materialabtrags basierend auf dem ersten und zweiten ermittelten Gewicht des Bauteils.

According to a first aspect, a method for producing a component for a lithography system is proposed. The component has an outer surface and one or more internal cavities with an inner surface. The method also comprises the steps:

1. a) Determining a first weight of the component,
2. b) removing a material from the component on its outer and inner surface in a liquid bath,
3. c) determining a second weight of the component, and
4. d) Determining a thickness of the material removal based on the first and second determined weights of the component.

This allows the thickness of the material removal on the outer and inner surfaces of the component to be determined in a simple and non-destructive manner. In particular, the thickness of the material removal on the outer and inner surfaces of the component is determined indirectly from the first weight of the component determined before the material is removed and the second weight of the component determined after the material is removed. In other words, a loss of mass of the component due to the removal of the material is determined and the thickness of the material removal is determined from this.

The direct measurement (e.g. with a micrometer screw or the like) of material removal on the inner surface of the component (i.e. on a surface formed by the one or more internal cavities of the component) is generally not possible. The proposed method can advantageously also determine material removal on the inner surface of the component.

The component is in particular a mechanical component of the lithography system, such as a carrier and/or support frame.

The component is preferably a component of a projection optics of the lithography system (projection exposure system). However, the component can also be a component of an illumination system of the lithography system. The projection exposure system can be an EUV lithography system. EUV stands for "Extreme Ult raviolet" and refers to a wavelength of the working light between 0.1 nm and 30 nm, in particular 13.5 nm. The projection exposure system can also be a DUV lithography system. DUV stands for "Deep Ultraviolet" and refers to a wavelength of the working light between 30 nm and 250 nm.

The component may, for example, comprise a metal and/or be a metallic component.

The component has one or more internal cavities. The one or more internal cavities have in particular one or more openings to an outside of the component. This means that the one or more internal cavities are not closed cavities. It can also be said that the outer surface of the component directly borders on the inner surface of the component. The one or more internal cavities are in particular designed in such a way that a liquid from the liquid bath can penetrate into the one or more internal cavities. As a result, the liquid in step b) also comes into contact with the inner surface of the component, so that material on the inner surface can be removed by means of the liquid.

The outer surface and the inner surface are in particular both surfaces of the component. The outer surface is a surface that is freely accessible from the outside of the component. The inner surface is a surface of the component that is only accessible via the one or more openings of the one or more internal cavities. The inner surface is in particular a surface that delimits the one or more internal cavities. The inner surface is in particular a surface of a wall that encloses the one or more internal cavities.

For example, the one or more internal cavities have one or more channels.

Because the material of the component is removed in the liquid bath, material of the component can also be removed from its inner surface, which is not accessible for mechanical removal processes.

For example, the component is completely immersed in the liquid bath to remove the material on its outer and inner surfaces. For example, the outer and inner surfaces of the component are completely covered and surrounded by a liquid from the liquid bath. For example, physical contact between the outer and inner surfaces of the component and the liquid from the liquid bath leads to the removal of the material from the component.

A device for carrying out the method has, for example, a control device for determining the thickness of the material removal based on the first and second determined weight of the component.

The control device can be implemented in hardware and/or software. In a hardware implementation, the control device can be designed as a device or as part of a device, for example as a computer or as a microprocessor or as a control computer. In a software implementation, the control device can be designed as a computer program product, as a function, as a routine, as part of a program code or as an executable object.

An apparatus for carrying out the method comprises, for example, a container for holding a liquid to provide the liquid bath.

The liquid contains, for example, an electrolyte and/or an acid.

In particular, step a) is carried out before step b). Furthermore, step c) can be carried out after step b, for example. Alternatively, steps b) and c) can also be carried out simultaneously, for example.

The removal of the material of the component can also include the removal of a coating of the component. Then, in step d), a thickness of the removed coating is determined.

Although a method for producing a component for a lithography system is described herein, it can also be used to produce a component of a device other than a lithography system.

According to one embodiment, the material of the component is removed chemically and/or electrochemically.

For example, the material of the component is chemically dissolved, e.g. etched, on its outer and inner surface, e.g. using an acid. Optionally, ultrasonic treatment of the component can also be used to accelerate the dissolution of the material.

For example, the material of the component is electrochemically removed from its outer and inner surfaces using an electrolyte liquid. For example, the material is removed by electrolytic detachment of metal ions from the outer and inner surfaces of the component.

For example, the material of the component is removed from its outer and inner surfaces using a chemical and/or electrochemical process. For example, the material of the component is smoothed (e.g. deburred, polished, passivated) from its outer and inner surfaces using the chemical and/or electrochemical process.

According to a further embodiment, the component comprises a metal, the component functions as a first electrode, at least one second electrode is provided which functions as a counter electrode, and the material of the component is removed in an electrolyte bath by applying current to the component.

As a result, material is removed electrochemically from the surface of the component. The component forms an anode in an electrochemical process that removes material from the surface of the anodic component and releases it into the electrolyte bath in which the component is immersed. For example, a positive pole of a DC voltage source is electrically connected to the component, while a negative pole of the DC voltage source is electrically connected to an electrical conductor immersed in the electrolyte bath (the counter electrode, counter cathode). When a voltage is applied, a current flows from the anode to the cathode, removing metal ions from the surface of the anodic component.

For example, the outer and inner surfaces of the component are smoothed (e.g. microscopically) by means of chemical and/or electrochemical treatment. In particular, the material removal during electrochemical treatment depends on the prevailing electric field between the electrode (anode) and counter electrode (cathode). Since the electric field is larger at sharp edges of the surface (e.g. at burrs) than at the rest of the surface, (protruding) tips, edges and burrs as well as elevations (mountains) of micro-roughness of the surface are removed during electrochemical treatment.

According to a further embodiment, the component is weighed in step a) and/or c).

A device for carrying out the method has, for example, a weighing device (e.g. with a scale) to weigh the component in step a) and/or c). The weighing device is, for example, designed to lift the component in order to measure its weight. The weighing device has, for example, a suspension unit on which the component can be suspended.

For example only, the weighing device is designed to measure a weight of the component with an accuracy of a few grams. For example, the weighing device is designed to measure a weight of the component with an accuracy of 5 g or less, 3 g or less, 2 g or less, 1 g or less, 0.1 g or less and/or 0.01 g or less.

In addition or instead, the weighing device is, for example, designed to weigh (e.g. also to carry) a component with a weight of 10 kg or more, 30 kg or more, 50 kg or more and/or 100 kg or more. In addition or instead, the weighing device is, for example, also designed to weigh a very light component of less than 10 kg, e.g. also less than 5 kg, less than 1 kg and/or less than 0.1 kg.

According to a further embodiment, the thickness of the material removal is determined based on the first and second determined weight of the component, a pre-determined density of the component and a pre-determined surface area of the outer and inner surface of the component.

The pre-determined area of the outer and inner surface of the component is in particular the total area of the outer and inner surface of the component. The pre-determined area of the outer and inner surface of the component corresponds in particular to the entire surface of the component processed by means of the liquid in the liquid bath.

For example, a first and second mass of the component are determined based on the first and second determined weight of the component. This allows a mass difference Δm of the first and second mass of the component to be calculated, whereby this mass difference Δm corresponds to the mass of the removed material. Furthermore, the mass of a body can be formulated as the product of its density ρ and its volume V (m = ρ · V). Assuming that the same amount and thus the same thickness of material is removed from the outer surface of the component as from its inner surface, the expected mass loss can be calculated using the following formula: $$\mathrm{\Delta }m=\frac{\Delta d\left[mm\right]}{2}\ast OF\left[m{m}^2\right]\ast \rho \left[\frac{g}{m{m}^3}\right]$$

Here, Δd is the change in thickness of the component, p is the density of the component, and OF is the sum of the processed (i.e., liquid-exposed) outer and inner surfaces of the component. The assumption that the same amount and thus the same thickness of material is removed from the outer surface of the component as from its inner surface means that half of the change in thickness Δd of the component (Δd/2) corresponds to both a thickness of material removal on the outer surface and a thickness of material removal on the inner surface (i.e., thickness of material removal on the outer surface = thickness of material removal on the inner surface = Δd/2).

Since the mass difference Δm is determined in the method from the first and second determined weight of the component, the change in thickness Δd of the component can be determined using the above formula if the density of the component and the area of the outer and inner surfaces of the component are known. From this, under the above assumption, the thickness of the material removal on the outer and inner surfaces can be determined as half the change in thickness Δd of the component.

If the removal of the material of the component corresponds to a removal of a coating of the component, then in step d) a thickness of the removed coating is determined based on a density of the coating.

According to another embodiment
the thickness of the material removal determined based on the first and second determined weight of the component is a first thickness of the material removal on the outer and inner surface,
after step b), a second thickness of the material removal is measured on the outer surface, and
a third thickness of material removal on the inner surface is determined based on the first and second thicknesses.

In this embodiment, the thickness of the material removal on the outer surface (second thickness) is additionally measured directly. For example, the thickness of the material removal on the outer surface (second thickness) is measured directly (e.g. by means of a mechanical method, e.g. a micrometer screw or the like).

This makes it possible to check whether material removal occurs evenly on the outer and inner surfaces. In other words, it is possible to check whether the thickness of the material removal on the outer surface (second thickness) corresponds to the thickness of the material removal on the inner surface (third thickness) (i.e. both are the same size and/or a deviation is 5% or less, 3% or less and/or 1% or less).

The second thickness of the material removal on the outer surface is measured after step b). This also includes, for example, a measurement after step c) and/or d).

According to a further embodiment, it is determined whether the third thickness of the material removal on the inner surface deviates from the second thickness of the material removal on the outer surface.

According to a further embodiment, the component is in the liquid bath during steps a) and c), so that a buoyancy force caused by a liquid in the liquid bath acts on the component. In addition, the thickness of the material removal is determined based on the first and second determined weight of the component, taking the buoyancy force into account.

This allows the first and second weight of the component to be determined at the same location (namely in the liquid bath) where the material of the component is removed. Consequently, it is not necessary to relocate the component to carry out steps b) and c).

For example, in this embodiment it is also possible to carry out steps b) and c) simultaneously. This enables process control of the removal of the component's material.

During steps a) and c), the component is in particular completely in the liquid bath, i.e. it is completely surrounded by the liquid so that the component floats in the liquid.

The buoyancy force is in particular a static buoyancy force and/or a hydrostatic buoyancy force.

The buoyancy force acting on the component reduces the weight of the component. The buoyancy force is given by a product of the acceleration due to gravity, the density ρ _liquid of the liquid and the volume of the liquid displaced by the component (which corresponds to the volume of the component when the component is completely immersed in the liquid).

According to a further embodiment, the thickness of the material removal is determined based on the determined first and second weight of the component, taking into account the buoyancy force, a pre-determined density of the component, a pre-determined density of the liquid and a pre-determined surface area of the outer and inner surface of the component.

In particular, the mass loss Δ _{min_liquid} determined in the liquid by removing the material of the component in step b) can be calculated using the following equation: $$\begin{array}{l}\Delta m_{inFl\ddot{u}ssigkeit}=V\left(K\ddot{o}rpe{r}_{nachAbtrag}\right)\left[m{m}^3\right]\ast \left(\rho \left[\frac{g}{m{m}^3}\right]-{\rho }_{Fl\ddot{u}ssigkeit}\left[\frac{g}{m{m}^3}\right]\right)\\ -\text{V}\left(K\ddot{o}rpe{r}_{vorAbtrag}\right)\left[m{m}^3\right]\ast \left(\rho \left[\frac{g}{m{m}^3}\right]-{\rho }_{Fl\ddot{u}ssigkeit}\left[\frac{g}{m{m}^3}\right]\right)\end{array}$$

Here, V(body _{after removal} ) denotes the volume of the component after the material removal in step b), ie when determining the second weight in step c). Furthermore, V(body _{before removal} ) denotes the volume of the component before the material removal in step b), ie when determining the first weight in step a).

In addition, ρ denotes the density of the component and ρ _liquid denotes the density of the liquid.

According to a further embodiment, steps b) and c) are carried out simultaneously, and/or step c) is repeated and carried out simultaneously with step b).

This allows the thickness of the material removal to be monitored during the removal process.

According to a further embodiment, in step d) it is determined whether the determined thickness of the material removal corresponds to a predetermined target thickness of the material removal, and steps b) and c) are carried out until it is determined that the determined thickness of the material removal corresponds to the target thickness.

This makes it possible to monitor the approach to a predetermined target thickness (desired thickness) of the material removal and the achievement of the predetermined target thickness.

In addition, the removal of material in step b) can be stopped as soon as the predetermined target thickness is reached.

The fact that the determined thickness of the material removal corresponds to the target thickness means, for example, that the determined thickness of the material removal is the same as the target thickness.

• additives Fertigen des Bauteils mit Hilfe eines Strangs rasch abbindender Masse, wobei die Außen- und Innenflächen des Bauteils in Schritt b) geglättet werden.

According to a further embodiment, the method comprises before step a):

• additive manufacturing of the component using a strand of fast-setting mass, whereby the outer and inner surfaces of the component are smoothed in step b).

By additively manufacturing the component, the component can be manufactured automatically (e.g. based on a CAD model) and quickly. However, additively manufactured components often have an undesirable surface roughness. This can be eliminated by removing the material of the component on its outer and inner surfaces in step b) (smoothing).

According to a further embodiment, the component is a carrier and heat sink for an optical component, in particular for a mirror, of the lithography system. In addition, the one or more internal cavities have one or more cooling channels of the heat sink.

The one or more internal cavities may also include one or more heat sink connecting cavities which interconnect the heat sink cooling channels.

1. a') Ermitteln eines ersten Gewichts des Bauteils,
2. b') Auftragen einer Beschichtung auf die Außen- und Innenfläche des Bauteils in einem Flüssigkeitsbad,
3. c') Ermitteln eines zweiten Gewichts des Bauteils, und
4. d') Ermitteln einer Dicke der Beschichtung basierend auf dem ersten und zweiten ermittelten Gewicht des Bauteils.

According to a further aspect, a method for producing a component for a lithography system is proposed. The component has an outer surface and one or more internal cavities with an inner surface. The method also comprises the steps:

1. a') Determining a first weight of the component,
2. b') applying a coating to the outer and inner surface of the component in a liquid bath,
3. c') determining a second weight of the component, and
4. d') Determining a thickness of the coating based on the first and second determined weights of the component.

This allows the thickness of the coating applied to the outer and inner surfaces of the component to be determined in a simple and non-destructive manner. In particular, the thickness of the coating is determined indirectly from the first weight of the component determined before the coating is applied and the second weight of the component determined after the coating is applied. In other words, an increase in the mass of the component due to the application of the coating is determined and the thickness of the applied coating is determined from this.

According to an embodiment of the further aspect, the thickness of the coating is determined based on the first and second determined weight of the component, a pre-determined density of the coating and a pre-determined surface area of the outer and inner surface of the component.

Similar to the method according to the first aspect, the component can also be in the liquid bath during steps a') and c') in the method according to the second aspect, so that a buoyancy force caused by a liquid in the liquid bath acts on the component. In addition, the thickness of the applied coating is determined based on the first and second determined weight of the component, taking the buoyancy force into account.

Although the determination of the thickness of the material removal or the determination of the thickness of the coating based on the first and second determined weight of the component and based on the determination of a volume change is described here, other methods such as CAD models, more complex calculation models or other methods that take a volume change into account can be used in addition or instead. This is particularly advantageous when very small and/or very complex bodies are considered and/or when large amounts of material removal/coating are applied or removed, since corners and radii of the corresponding body can then lead to sources of error.

In this case, "one" is not necessarily to be understood as being limited to just one element. Rather, several elements, such as two, three or more, can also be provided. Any other counting word used here is also not to be understood as meaning that there is a limitation to the exact number of elements mentioned. Rather, numerical deviations upwards and downwards are possible, unless otherwise stated.

The embodiments and features described for the method according to the first aspect apply, mutatis mutandis, to the method according to the second aspect and vice versa.

Further possible implementations of the invention also include combinations of features or embodiments described above or below with respect to the exemplary embodiments that are not explicitly mentioned. The person skilled in the art will also add individual aspects as improvements or additions to the respective basic form of the invention.

• 1 zeigt einen schematischen Meridionalschnitt einer Projektionsbelichtungsanlage für die EUV-Projektionslithographie;
• 2 zeigt ein Flussablaufdiagramm eines Verfahrens zum Herstellen eines Bauteils für die Projektionslithographie aus 1 gemäß einer Ausführungsform eines ersten Aspekts;
• 3 zeigt einen Querschnitt eines bei dem Verfahren aus 2 hergestellten Bauteils gemäß einer Ausführungsform;
• 4 zeigt einen Querschnitt des Bauteils entlang Linie IV-IV in 3;
• 5 veranschaulicht einen Verfahrensschritt des Verfahrens aus 2 gemäß einer Ausführungsform, bei welchem ein Gewicht des Bauteils ermittelt wird;
• 6 veranschaulicht einen weiteren Verfahrensschritt des Verfahrens aus 2 gemäß einer Ausführungsform, bei welchem Material des Bauteils an seiner Außen- und Innenfläche in einem Flüssigkeitsbad abgetragen wird;
• 7 veranschaulicht Verfahrensschritte des Verfahrens aus 2 gemäß einer weiteren Ausführungsform, bei welchen ein Gewicht des Bauteils ermittelt und Material des Bauteils in einem Flüssigkeitsbad abgetragen werden;
• 8 zeigt ein Flussablaufdiagramm eines Verfahrens zum Herstellen eines Bauteils für die Projektionslithographie aus 1 gemäß einer Ausführungsform eines zweiten Aspekts; und
• 9 zeigt eine Ansicht ähnlich wie 4, wobei ein bei dem Verfahren aus 8 hergestelltes Bauteil gemäß einer Ausführungsform gezeigt ist.

Further advantageous embodiments and aspects of the invention are the subject of the subclaims and the embodiments of the invention described below. The invention is explained in more detail below using preferred embodiments with reference to the attached figures.

• 1 shows a schematic meridional section of a projection exposure system for EUV projection lithography;
• 2 shows a flow chart of a method for producing a component for projection lithography from 1 according to an embodiment of a first aspect;
• 3 shows a cross-section of a 2 manufactured component according to one embodiment;
• 4 shows a cross-section of the component along line IV-IV in 3 ;
• 5 illustrates a step of the method of 2 according to an embodiment, in which a weight of the component is determined;
• 6 illustrates a further step of the process from 2 according to an embodiment in which material of the component is removed on its outer and inner surface in a liquid bath;
• 7 illustrates procedural steps of the procedure from 2 according to a further embodiment, in which a weight of the component is determined and material of the component is removed in a liquid bath;
• 8 shows a flow chart of a method for producing a component for projection lithography from 1 according to an embodiment of a second aspect; and
• 9 shows a view similar to 4 , whereby a process consisting of 8 manufactured component according to one embodiment is shown.

In the figures, identical or functionally equivalent elements have been given the same reference symbols unless otherwise stated. It should also be noted that the representations in the figures are not necessarily to scale.

1 shows an embodiment of a projection exposure system 1 (lithography system), in particular an EUV lithography system. An embodiment of an illumination system 2 of the projection exposure system 1 has, in addition to a light or radiation source 3, an illumination optics 4 for illuminating an object field 5 in an object plane 6. In an alternative embodiment, the light source 3 can also be provided as a separate module from the rest of the illumination system 2. In this case, the illumination system 2 does not comprise the light source 3.

A reticle 7 arranged in the object field 5 is exposed. The reticle 7 is held by a reticle holder 8. The reticle holder 8 can be displaced via a reticle displacement drive 9, in particular in a scanning direction.

In the 1 For explanation purposes, a Cartesian coordinate system with an x-direction x, a y-direction y and a z-direction z is shown. The x-direction x runs perpendicularly into the plane of the drawing. The y-direction y runs horizontally and the z-direction z runs vertically. The scanning direction runs in the 1 along the y-direction y. The z-direction z runs perpendicular to the object plane 6.

The projection exposure system 1 comprises a projection optics 10. The projection optics 10 serves to image the object field 5 into an image field 11 in an image plane 12. The image plane 12 runs parallel to the object plane 6. Alternatively, an angle other than 0° between the object plane 6 and the image plane 12 is also possible.

A structure on the reticle 7 is imaged onto a light-sensitive layer of a wafer 13 arranged in the area of the image field 11 in the image plane 12. The wafer 13 is held by a wafer holder 14 held. The wafer holder 14 can be displaced via a wafer displacement drive 15, in particular along the y-direction y. The displacement of the reticle 7 on the one hand via the reticle displacement drive 9 and the wafer 13 on the other hand via the wafer displacement drive 15 can take place in synchronization with one another.

The light source 3 is an EUV radiation source. The light source 3 emits in particular EUV radiation 16, which is also referred to below as useful radiation, illumination radiation or illumination light. The useful radiation 16 has in particular a wavelength in the range between 5 nm and 30 nm. The light source 3 can be a plasma source, for example an LPP source (Laser Produced Plasma, plasma generated with the aid of a laser) or a DPP source (Gas Discharged Produced Plasma, plasma generated by means of gas discharge). It can also be a synchrotron-based radiation source. The light source 3 can be a free-electron laser (FEL).

The illumination radiation 16 that emanates from the light source 3 is bundled by a collector 17. The collector 17 can be a collector with one or more ellipsoidal and/or hyperboloidal reflection surfaces. The at least one reflection surface of the collector 17 can be exposed to the illumination radiation 16 in grazing incidence (GI), i.e. with angles of incidence greater than 45°, or in normal incidence (NI), i.e. with angles of incidence less than 45°. The collector 17 can be structured and/or coated on the one hand to optimize its reflectivity for the useful radiation and on the other hand to suppress stray light.

After the collector 17, the illumination radiation 16 propagates through an intermediate focus in an intermediate focal plane 18. The intermediate focal plane 18 can represent a separation between a radiation source module, comprising the light source 3 and the collector 17, and the illumination optics 4.

The illumination optics 4 comprise a deflection mirror 19 and a first facet mirror 20 arranged downstream of this in the beam path. The deflection mirror 19 can be a flat deflection mirror or alternatively a mirror with a beam-influencing effect beyond the pure deflection effect. Alternatively or additionally, the deflection mirror 19 can be designed as a spectral filter which separates a useful light wavelength of the illumination radiation 16 from false light of a different wavelength. If the first facet mirror 20 is arranged in a plane of the illumination optics 4 which is optically conjugated to the object plane 6 as a field plane, it is also referred to as a field facet mirror. The first facet mirror 20 comprises a plurality of individual first facets 21, which can also be referred to as field facets. Of these first facets 21, only one is shown in the 1 only a few examples are shown.

The first facets 21 can be designed as macroscopic facets, in particular as rectangular facets or as facets with an arcuate or partially circular edge contour. The first facets 21 can be designed as flat facets or alternatively as convex or concave curved facets.

As for example from the DE 10 2008 009 600 A1 As is known, the first facets 21 themselves can also be composed of a plurality of individual mirrors, in particular a plurality of micromirrors. The first facet mirror 20 can in particular be designed as a microelectromechanical system (MEMS system). For details, see the DE 10 2008 009 600 A1 referred to.

Between the collector 17 and the deflection mirror 19, the illumination radiation 16 runs horizontally, i.e. along the y-direction y.

In the beam path of the illumination optics 4, a second facet mirror 22 is arranged downstream of the first facet mirror 20. If the second facet mirror 22 is arranged in a pupil plane of the illumination optics 4, it is also referred to as a pupil facet mirror. The second facet mirror 22 can also be arranged at a distance from a pupil plane of the illumination optics 4. In this case, the combination of the first facet mirror 20 and the second facet mirror 22 is also referred to as a specular reflector. Specular reflectors are known from the US 2006/0132747 A1 , the EP 1 614 008 B1 and the US 6,573,978 .

The second facet mirror 22 comprises a plurality of second facets 23. In the case of a pupil facet mirror, the second facets 23 are also referred to as pupil facets.

The second facets 23 can also be macroscopic facets, which can be round, rectangular or hexagonal, for example, or alternatively facets composed of micromirrors. In this regard, reference is also made to the DE 10 2008 009 600 A1 referred to.

The second facets 23 can have planar or alternatively convex or concave curved reflection surfaces.

The illumination optics 4 thus forms a double-faceted system. This basic principle is also known as a fly's eye integrator.

It may be advantageous not to arrange the second facet mirror 22 exactly in a plane that is optically conjugated to a pupil plane of the projection optics 10. In particular, the second facet mirror 22 can be arranged tilted relative to a pupil plane of the projection optics 10, as is the case, for example, in the DE 10 2017 220 586 A1 described.

With the help of the second facet mirror 22, the individual first facets 21 are imaged in the object field 5. The second facet mirror 22 is the last bundle-forming or actually the last mirror for the illumination radiation 16 in the beam path in front of the object field 5.

In a further embodiment of the illumination optics 4 (not shown), a transmission optics can be arranged in the beam path between the second facet mirror 22 and the object field 5, which contributes in particular to the imaging of the first facets 21 in the object field 5. The transmission optics can have exactly one mirror, but alternatively also two or more mirrors, which are arranged one behind the other in the beam path of the illumination optics 4. The transmission optics can in particular comprise one or two mirrors for vertical incidence (NI mirrors, normal incidence mirrors) and/or one or two mirrors for grazing incidence (GI mirrors, grazing incidence mirrors).

The lighting optics 4 have in the version shown in the 1 As shown, after the collector 17 there are exactly three mirrors, namely the deflection mirror 19, the first facet mirror 20 and the second facet mirror 22.

In a further embodiment of the illumination optics 4, the deflection mirror 19 can also be omitted, so that the illumination optics 4 can then have exactly two mirrors after the collector 17, namely the first facet mirror 20 and the second facet mirror 22.

The imaging of the first facets 21 by means of the second facets 23 or with the second facets 23 and a transmission optics into the object plane 6 is usually only an approximate imaging.

The projection optics 10 comprises a plurality of mirrors Mi, which are numbered according to their arrangement in the beam path of the projection exposure system 1.

In the 1 In the example shown, the projection optics 10 comprises six mirrors M1 to M6. Alternatives with four, eight, ten, twelve or another number of mirrors Mi are also possible. The projection optics 10 is a double-obscured optics. The penultimate mirror M5 and the last mirror M6 each have a passage opening for the illumination radiation 16. The projection optics 10 has a numerical aperture on the image side that is greater than 0.5 and can also be greater than 0.6 and can be, for example, 0.7 or 0.75.

Reflection surfaces of the mirrors Mi can be designed as free-form surfaces without a rotational symmetry axis. Alternatively, the reflection surfaces of the mirrors Mi can be designed as aspherical surfaces with exactly one rotational symmetry axis of the reflection surface shape. The mirrors Mi, just like the mirrors of the illumination optics 4, can have highly reflective coatings for the illumination radiation 16. These coatings can be designed as multilayer coatings, in particular with alternating layers of molybdenum and silicon.

The projection optics 10 have a large object-image offset in the y-direction y between a y-coordinate of a center of the object field 5 and a y-coordinate of the center of the image field 11. This object-image offset in the y-direction y can be approximately as large as a z-distance between the object plane 6 and the image plane 12.

The projection optics 10 can in particular be anamorphic. In particular, it has different image scales βx, βy in the x and y directions x, y. The two image scales βx, βy of the projection optics 10 are preferably (βx, βy) = (+/- 0.25, +/- 0.125). A positive image scale β means an image without image inversion. A negative sign for the image scale B means an image with image inversion.

The projection optics 10 thus leads to a reduction in the ratio 4:1 in the x-direction x, i.e. in the direction perpendicular to the scanning direction.

The projection optics 10 leads to a reduction of 8:1 in the y-direction y, i.e. in the scanning direction.

Other image scales are also possible. Image scales with the same sign and absolutely the same in the x and y directions x, y, for example with absolute values of 0.125 or 0.25, are also possible.

The number of intermediate image planes in the x and y directions x, y in the beam path between the object field 5 and the image field 11 can be the same or can be different depending on the design of the projection optics 10. Examples of projection optics with different numbers of such intermediate images in the x and y directions x, y are known from US 2018/0074303 A1 .

Each of the second facets 23 is assigned to exactly one of the first facets 21 to form a respective illumination channel for illuminating the object field 5. This can result in particular in illumination according to the Köhler principle. The far field is broken down into a plurality of object fields 5 using the first facets 21. The first facets 21 generate a plurality of images of the intermediate focus on the second facets 23 assigned to them.

The first facets 21 are each imaged onto the reticle 7 by an associated second facet 23, superimposing one another, to illuminate the object field 5. The illumination of the object field 5 is in particular as homogeneous as possible. It preferably has a uniformity error of less than 2%. The field uniformity can be achieved by superimposing different illumination channels.

By arranging the second facets 23, the illumination of the entrance pupil of the projection optics 10 can be defined geometrically. By selecting the illumination channels, in particular the subset of the second facets 23 that guide light, the intensity distribution in the entrance pupil of the projection optics 10 can be set. This intensity distribution is also referred to as the illumination setting or illumination pupil filling.

A likewise preferred pupil uniformity in the area of defined illuminated sections of an illumination pupil of the illumination optics 4 can be achieved by a redistribution of the illumination channels.

In the following, further aspects and details of the illumination of the object field 5 and in particular of the entrance pupil of the projection optics 10 are described.

The projection optics 10 can in particular have a homocentric entrance pupil. This can be accessible. It can also be inaccessible.

The entrance pupil of the projection optics 10 cannot usually be illuminated precisely with the second facet mirror 22. When the projection optics 10 images the center of the second facet mirror 22 telecentrically onto the wafer 13, the aperture rays often do not intersect at a single point. However, a surface can be found in which the pairwise determined distance of the aperture rays is minimal. This surface represents the entrance pupil or a surface conjugated to it in spatial space. In particular, this surface shows a finite curvature.

It is possible that the projection optics 10 have different positions of the entrance pupil for the tangential and the sagittal beam path. In this case, an imaging element, in particular an optical component of the transmission optics, should be provided between the second facet mirror 22 and the reticle 7. With the help of this optical element, the different positions of the tangential entrance pupil and the sagittal entrance pupil can be taken into account.

In the 1 In the arrangement of the components of the illumination optics 4 shown, the second facet mirror 22 is arranged in a surface conjugated to the entrance pupil of the projection optics 10. The first facet mirror 20 is arranged tilted to the object plane 6. The first facet mirror 20 is arranged tilted to an arrangement plane that is defined by the deflection mirror 19. The first facet mirror 20 is arranged tilted to an arrangement plane that is defined by the second facet mirror 22.

2 shows a flow chart of a method for producing a component 200 (Fig. 3) for a lithography system 1 ( 1 ) according to a first aspect.

3 shows a cross-section of an exemplary component 200 produced by the method of 2 can be produced.

The component 200 is in particular a mechanical component of the lithography system 1. For example, the component 200 is a carrier and/or support frame 202 of an optical component of the lithography system 1. The component 200 is, for example, a carrier 202 of one of the mirrors M1 to M6 of the projection optics 10 or one of the mirrors 19, 20, 22 of the illumination optics 4 of the lithography system 1.

The component 200 has one or more internal cavities 204. The one or more internal cavities 204 have in particular one or more openings 206 to an outer side 208 of the component 200.

In the 3 In the example shown, the component 200 has a first internal cavity 204a in the form of a first channel and a second internal cavity 204b in the form of a second channel. In addition, the component 200 has a third internal cavity 204c, which connects the first and the second internal cavity 204a, 204b to one another. Although in 3 three cavities 204 are shown, the component 200 can also have more or fewer than three cavities 204.

The component 200 is, for example, a carrier 202 with a heat sink 210. The heat sink 210 is designed in particular for actively cooling the optical component of the lithography system 1 carried by the carrier 202. The one or more internal cavities 204 can then have, for example, cooling channels 204a, 204b and/or cooling cavities 204c for receiving a cooling liquid.

The component 200 comprises, for example, a metal and/or is a metallic component.

The component 200 also has an outer surface 212. The outer surface 212 can, as in 3 and 4 shown, comprise a plurality of sections 212a to 212h. The outer surface 212 is a surface of the component 200 that is freely accessible from the outer side 208 of the component 200.

The component 200 also has an inner surface 214. The inner surface 214 is a surface of the component 200 that is only accessible via the opening(s) of the one or more internal cavities 204. The inner surface 214 is in particular a surface of a wall 216 ( 4 ) that defines the one or more internal cavities 204. The inner surface 214 can, as in 3 shown, comprise several sections 214a to 214c.

4 shows a cross-section of component 200 along line IV-IV in 3 . In 4 are the ones in 3 marked sections 212a and 212c of the outer surface 212. In addition, 4 two sections 212g and 212h of the outer surface 212 of the component 200 can be seen, which in 3 are not visible.

In an optional first step S1 of the method, the component 200 is additively manufactured. In particular, the component 200 is additively manufactured using a strand of fast-setting mass (not shown).

In a second step S2 of the method, a first weight G1 ( 5 ) of component 200 is determined.

As in 5 As shown, a device 300 for carrying out the method of 2 for example, have a weighing device 302. With the weighing device 302, the component 200 can be weighed and its weight G1 can be determined. The weighing device 302 has, for example, a suspension unit 304, on which the component 200 can be suspended. The weighing device 302 also has, in particular, a scale 306.

In a third step S3 of the method, a material 218 of the component 200 is removed from its outer surface 212 and its inner surface 214 in a liquid bath 308.

In the following, an electrochemical removal of the material 218 on the surfaces 212, 214 of the component 200 is described as an example.

As in 6 shown is the device 300 for carrying out the method of 2 a container 310 for holding a liquid 312 to provide the liquid bath 308.

6 shows in particular a structure for electrochemically removing material 218 of the component 200 (e.g. for electrochemically polishing the outer surface 212 and the inner surface 214). In an electrochemical removal process, an electrolyte liquid 314 and/or electrolyte solution 314 is used as the liquid 312. The electrolyte liquid 314 or electrolyte solution 314 is, for example, a mixture of sulfuric acid and phosphoric acid. Furthermore, the electrolyte liquid/electrolyte solution 314 can also have a water content. The electrolyte liquid/electrolyte solution 314 can also have a different composition.

As in 6 As shown, the device 300 can have a direct current source 316 with a positive pole 318 and a negative pole 320. To treat the component 200 in the liquid 312 (e.g. for chemical and/or electrochemical treatment), the component 200 is electrically connected to the positive pole 318 of the direct current source 316. The component 200 functions as a first electrode 322, in particular as an anode, in the method. Furthermore, a counter electrode 324 (cathode 324) is provided, which is electrically connected to the negative pole 320 of the direct current source 316. The component 200 as anode 322 and the cathode 324 are immersed in the electrolyte solution 314. When a voltage is generated with the direct current source 316, metal ions 326 are released from the outer surface 212 and the inner surface 214 ( 4 ) of the component 200 into the electrolyte solution 314. The metal ions 326 flow (towards) the cathode 324. The voltage generated by the direct current source 316 is, for example, between 3 and 6 volts. A different voltage value can also be used.

In the enlarged section of 4 the outer surface 212 of the component 200 can be seen before the removal of the material 218 in step S3. Furthermore, an outer surface 212' of the component 200' after the removal of the material 218 is shown with dashed lines. In addition, a thickness d _A of the material removal 218 on the outer surface 212, 212' and a thickness d _I of the material removal 218 on the inner surface 214, 214' are marked.

In a fourth step S4 of the method, a second weight G2 of the component 200' is determined.

For example, the second weight G2 of the component 200' is 5 shown weighing device 302. For this purpose, the component 200' is removed, for example, from the liquid bath 308 ( 6 ), dried and suspended from the suspension unit 304 of the weighing device 302.

In a fifth step S5 of the method, a thickness d of the material removal 218 is determined based on the first and second determined weight G1, G2 of the component 200, 200'.

For example, based on the first and second determined weight G1, G2 of the component 200, 200', a first and second mass m1, m2 ( 5 ) of the component 200, 200' is determined. This allows a mass difference Δm of the first and second masses m1, m2 of the component 200, 200' to be calculated (Δm = m2 - m1). This mass difference Δm corresponds to the mass of the removed material 218.

Furthermore, the mass of a body can be formulated as the product of its density p and its volume V (m = p · V). Assuming that the same amount and thus the same thickness d, d _A of material 218 is removed from the outer surface 212 of the component 200 as from its inner surface 214 (thickness d, d _I ), the expected mass loss Δm can be calculated using the following formula: $$\Delta m=\frac{\Delta d\left[mm\right]}{2}\ast OF\left[m{m}^2\right]\ast \rho \left[\frac{g}{m{m}^3}\right]$$

Here, Δd denotes a change in thickness of the component 200, 200' from a first thickness D before the removal of the material 218 to a second thickness D' after the removal of the material 218 ( 3 ). Furthermore, p denotes the density of the component 200 and OF ( 4 ) the sum of the surface area of the processed (ie exposed to the liquid 312) outer and inner surfaces 212, 214 of the component 200. The assumption that the same amount and thus the same thickness d _A of material 218 is removed from the outer surface 212 of the component 200 as from its inner surface 214 (thickness d _I ) means that d = d _A = d _I = Δd/2.

The mass difference Δm can be determined in the method from the first and second determined weight G1, G2 of the component 200, 200'. Furthermore, the density ρ of the component 200 and the surface area OF of the outer and inner surfaces 212, 214 of the component 200 can be determined in advance and/or be known. Consequently, the change in thickness Δd of the component 200 can be determined using the above formula. From this, the thickness d of the material removal 218 can be determined under the aforementioned assumption, ie d = d _A = d _I = Δd/2.

Optionally, after step S3, a thickness d2 ( 4 ) of the material removal 218 on the outer surface 212 can be measured. For example, the thickness d2 of the material removal 218 on the outer surface 212 can be measured directly mechanically.

This allows a thickness d3 of the material removal 218 on the inner surface 214 to be derived. In particular, the thickness d3 of the material removal 218 on the inner surface 214 can be determined based on the thickness Δd, which was determined assuming equal material removal on the outer and inner surfaces 212, 214, and the directly measured thickness d2 of the material removal 218 on the outer surface 212 (d3 = Δd - d2).

For example, it can also be determined whether the thickness d3 of the material removal 218 on the inner surface 214 deviates from the thickness d2 of the material removal 218 on the outer surface 212. This makes it possible to check whether material removal 218 occurs evenly on the outer and inner surfaces 212, 214.

Although not shown in the figures, the material 218 of the surfaces 212, 214 of the component 200 can also be chemically removed. For example, the material 218 of the component 200 can be dissolved in a liquid bath comprising an acid.

In 7 is a device 400 for carrying out the method of 2 according to another embodiment.

The device 400 enables the determination of the first and second weights K1, K2 of the component 200, 200' while the component 200, 200' is immersed in a liquid bath 408. This also makes it possible, for example, to monitor the process of removing the material 218 of the component 200, 200'.

The device 400 comprises, for example, a weighing device 402 with a suspension unit 404 and a scale 406 similar to the weighing device 302 in 5 . In addition, the device 400 comprises a direct current source 416 having a positive pole 418 and a negative pole 420 similar to the direct current source 316 in 6 . The component 200 is electrically connected to the positive pole 418 and functions as an anode 422 in the process. Furthermore, a counter electrode 424 (cathode 424) similar to the counter electrode 324 in 6 which is electrically connected to the negative pole 420. The component 200 as anode 422 and the cathode 424 are immersed in a liquid 412, in particular an electrolyte solution 414. By applying a voltage with the direct current source 416 to the anode 422 and the cathode 424, an electric field is built up between the anode 422 and the cathode 424 and metal ions 426 are released from the outer surface 212 and the inner surface 214 ( 4 ) of the component 200 into the electrolyte solution 414. The metal ions 426 flow towards the cathode 424.

In particular, the component 200 is located in the liquid bath 408 not only during step S3, but also during steps S2 and S4.

In particular, the component 200 is completely immersed in the liquid bath 408 during steps S2 and S4, so that its outer surface 212 and its inner surface 214 (ie all sections 212a to 212h of the outer surface 212 and all sections 214a to 214c of its inner surface 214, 4 ) are completely covered with the liquid 412.

Consequently, when determining the first and second weights K1, K2 of the component 200, 200' during steps S2 and S4, a buoyancy force F _A acts on the component 200, 200', which counteracts a weight force F _G on the component 200, 200'. This buoyancy force F _A is taken into account when determining the thickness d of the material removal 218 in step S5. In particular, the thickness d of the material removal 218 is determined based on the first and second determined weights K1, K2 of the component 200, 200', taking into account the buoyancy (the buoyancy force F _A ).

The buoyancy force F _A is given by a product of the acceleration due to gravity, the density ρ _liquid of the liquid 412 and the volume of the liquid 412 displaced by the component 200 (which corresponds to the volume of the component 200 when the component 200 is completely immersed in the liquid 412). If the density ρ _liquid of the liquid 412 is known and/or pre-determined, then the mass loss Δ _min-liquid determined in the liquid 412 by removing the material 218 of the component 200 can be calculated using the following equation: $$\begin{array}{l}\Delta m_{inFl\ddot{u}ssigkeit}=V\left(K\ddot{o}rpe{r}_{nachAbtrag}\right)\left[m{m}^3\right]\ast \left(\rho \left[\frac{g}{m{m}^3}\right]-{\rho }_{Fl\ddot{u}ssigkeit}\left[\frac{g}{m{m}^3}\right]\right)\\ -V\left(K\ddot{o}rpe{r}_{vorAbtrag}\right)\left[m{m}^3\right]\ast \left(\rho \left[\frac{g}{m{m}^3}\right]-{\rho }_{Fl\ddot{u}ssigkeit}\left[\frac{g}{m{m}^3}\right]\right)\end{array}$$

In this, V(body _after _ _removal ) denotes the volume V' of the component 200' after the material removal in step S3. Furthermore, V(body _{before_removal} ) denotes the volume V of the component 200 before the material removal in step S3. In addition, ρ denotes the density of the component 200 and ρ _liquid denotes the density of the liquid 412.

Optionally, steps S3 and S4 can be carried out simultaneously. In particular, step S4 of determining the second weight K2 can be repeated and carried out simultaneously with step S3 of removing the material 218. This allows the thickness d of the material removal 218 to be monitored during the removal process.

For example, in step S5 it can also be determined whether the determined thickness d of the material removal 218 corresponds to a predetermined target thickness d _Z of the material removal 218. Then steps S3 and S4 can be carried out until it is determined that the determined thickness d of the material removal 218 corresponds to the target thickness d _Z.

In the following, with reference to 8 a method for producing a component 500 ( 9 ) for a lithography system 1 according to a second aspect is described. The component 500 has an outer surface 512. Furthermore, the component 500 has one or more internal cavities 504 with an inner surface 514.

In an optional first step S1' of the method of 8 the component 500 is processed similarly to step S1 ( 2 ) are additively manufactured.

In a second step S2' of the method of 8 a first weight H1 of the component 500 is determined similarly to step S2 ( 2 ) was determined.

In a third step S3' of the method of 8 A coating 518 is applied to the outer and inner surfaces 512, 514 of the component 500 in a liquid bath (not shown). The liquid bath can be similar to the liquid bath 308 in 6 be.

In a fourth step S4' of the method of 8 a second weight H2 of the component 500' is applied similarly to step S4 ( 2 ) was determined.

In a fifth step S5' of the method of 8 a thickness d _B of the coating 518 is determined based on the first and second determined weight H1, H2 of the component 500, 500'.

The thickness d _B of the coating 518 is determined, for example, based on the first and second determined weight H1, H2 of the component 500, 500', a pre-determined density ρ _B of the coating 518 and a pre-determined surface area OF ( 4 ) of the outer and inner surfaces 512, 514 of the component 500.

Although not shown in the figures, the component 500, 500' may optionally be similar to the method according to the first aspect ( 2 ) also in the procedure according to the second aspect ( 8 ) during steps S2' and S4' in the liquid bath (see 308 in 6 ) so that a buoyancy force caused by a liquid in the liquid bath acts on the component 500, 500'. Then the thickness d _B of the applied coating 518 can be determined based on the first and second determined weight H1, H2 of the component 500, 500' taking into account the buoyancy force F _A - analogous to that in connection with 7 described - can be determined.

Although the present invention has been described using exemplary embodiments, it can be modified in many ways.

REFERENCE SYMBOL LIST

1

projection exposure system

2

lighting system

3

light source

4

lighting optics

5

object field

6

object level

7

reticle

8

reticle holder

9

reticle displacement drive

10

projection optics

11

image field

12

image plane

13

wafer

14

wafer holder

15

wafer relocation drive

16

illumination radiation

17

collector

18

intermediate focal plane

19

deflecting mirror

20

first faceted mirror

21

first facet

22

second facet mirror

23

second facet

200, 200'

component

202

carrier

204

cavity

204a-204c

cavity

206

opening

208

outside

210

heat sink

212, 212'

outer surface

212a-212h

outer surface

214, 214'

inner surface

214a-214c

inner surface

216

Wall

218

material removal

300

device

302

weighing device

304

suspension unit

306

Scale

308

liquid bath

310

container

312

liquid

314

electrolyte fluid

316

DC source

318

positive pole

320

negative pole

322

electrode

324

electrode

400

device

402

weighing device

404

suspension unit

406

Scale

408

liquid bath

412

liquid

414

electrolyte fluid

416

DC source

418

positive pole

420

negative pole

422

electrode

424

electrode

426

metal ion

500, 500'

component

504

cavity

512

outer surface

514

inner surface

518

coating

d

thickness

d1, d2, d3

thickness

dA, dB, dI

thickness

D, D'

thickness

Δd

thickness change

G1, G2

Weight

H1, H2

Weight

I

Electricity

K1, K2

Weight

m1, m2

mass

M1-M6

Mirror

OF

surface area

ρB

density

ρfluid

density

S1-S5

procedural steps

S1'-S5'

procedural steps

QUOTES INCLUDED IN THE DESCRIPTION

This list of documents listed by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions.

Cited patent literature

• DE 10 2008 009 600 A1 [0087, 0091]
• US 2006/0132747 A1 [0089]
• EP 1 614 008 B1 [0089]
• US 6,573,978 [0089]
• DE 10 2017 220 586 A1 [0094]
• US 2018/0074303 A1 [0108]

Claims (15)

Method for producing a component (200) for a lithography system (1), wherein the component (200) has an outer surface (212) and one or more internal cavities (204) with an inner surface (214), with the steps: a) determining (S2) a first weight (G1) of the component (200), b) removing (S3) a material (218) of the component (200) on its outer and inner surface (212, 214) in a liquid bath (308), c) determining (S4) a second weight (G2) of the component (200'), and d) determining (S5) a thickness (d) of the material removed (218) based on the first and second determined weight (G1, G2) of the component (200, 200'). procedure according to claim 1 , wherein the material (218) of the component (200) is removed chemically and/or electrochemically. procedure according to claim 1 or 2 , wherein the component (200) comprises a metal, the component (200) functions as a first electrode (322), at least one second electrode (324) is provided which functions as a counter electrode, and the material (218) of the component (200) is removed in an electrolyte bath (314) by applying current (I) to the component (200). Method according to one of the Claims 1 until 3 , wherein the component (200) is weighed in step a) and/or c). Method according to one of the Claims 1 until 4 , wherein the thickness (d) of the material removal (218) is determined based on the first and second determined weight (G1, G2) of the component (200, 200'), a pre-determined density (p) of the component (200) and a pre-determined surface area (OF) of the outer and inner surface (212, 214) of the component (200). Method according to one of the Claims 1 until 5 , wherein the thickness (d) of the material removal (218) determined based on the first and second determined weight (G1, G2) of the component (200, 200') is a first thickness (d1) of the material removal (218) on the outer and inner surfaces (212, 214), after step b) a second thickness (d2, d _A ) of the material removal (218) on the outer surface (212) is measured, and a third thickness (d3, d _I ) of the material removal (218) on the inner surface (214) is determined based on the first and second thicknesses (d1, d2). procedure according to claim 6 , wherein it is determined whether the third thickness (d3, d ₁ ) of the material removal (218) on the inner surface (214) deviates from the second thickness (d2, d _A ) of the material removal (218) on the outer surface (212). Method according to one of the Claims 1 until 7 , wherein the component (200, 200') is located in the liquid bath (408) during steps a) and c), so that a buoyancy force (F _A ) caused by a liquid (412) of the liquid bath (408) acts on the component (200, 200'), and the thickness (d) of the material removal (218) is determined based on the first and second determined weight (K1, K2) of the component (200, 200') taking into account the buoyancy force (F _A ). procedure of claim 8 , wherein the thickness (d) of the material removal (218) is determined based on the determined first and second weight (K1, K2) of the component (200, 200') taking into account the buoyancy force (F _A ), a pre-determined density (ρ) of the component (200), a pre-determined density (ρ _liquid ) of the liquid (412) and a pre-determined surface area (OF) of the outer and inner surface (212, 214) of the component (200). procedure of claim 8 or 9 , wherein steps b) and c) are carried out simultaneously, and/or step c) is repeated and carried out simultaneously with step b). Method according to one of the Claims 8 until 10 , wherein in step d) it is determined whether the determined thickness (d) of the material removal (218) corresponds to a predetermined target thickness (d _Z ) of the material removal (218), and steps b) and c) are carried out until it is determined that the determined thickness (d) of the material removal (218) corresponds to the target thickness (d _Z ). Method according to one of the Claims 1 until 11 , comprising before step a): additive manufacturing (S1) of the component (200) with the aid of a strand of rapid-setting mass, wherein the outer and inner surfaces (212, 214) of the component (200) are smoothed in step b). Method according to one of the Claims 1 until 12 , wherein the component (200) is a carrier (202) and heat sink (210) for an optical component (19, 20, 22, M1-M6), in particular for a mirror, of the lithography system (1), and the one or more internal cavities (204) have one or more cooling channels (204a, 204b) of the heat sink (210). Method for producing a component (500) for a lithography system (1), wherein the component (500) has an outer surface (512) and one or more internal cavities (504) with an inner surface (514), comprising the steps of: a') determining (S2') a first weight (H1) of the component (500), b') applying (S3') a coating (518) to the outer and inner surfaces (512, 514) of the component (500) in a liquid bath (308), c') determining (S4') a second weight (H2) of the component (500'), and d') determining (S5') a thickness (d _B ) of the coating (518) based on the first and second determined weights (H1, H2) of the component (500, 500'). procedure according to claim 14 , wherein the thickness (d _B ) of the coating (518) is determined based on the first and second determined weight (H1, H2) of the component (500, 500'), a pre-determined density (ρ _B ) of the coating (518) and a pre-determined surface area (OF) of the outer and inner surface (512, 514) of the component (500).

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