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DE102008032784A1 - Zusammensetzung mit pastöser Konsistenz für die Ausbildung elektrischer Kontakte auf einem Silicium-Solarwafer und damit hergestellter Kontakt - Google Patents

Zusammensetzung mit pastöser Konsistenz für die Ausbildung elektrischer Kontakte auf einem Silicium-Solarwafer und damit hergestellter Kontakt Download PDF

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Publication number
DE102008032784A1
DE102008032784A1 DE102008032784A DE102008032784A DE102008032784A1 DE 102008032784 A1 DE102008032784 A1 DE 102008032784A1 DE 102008032784 A DE102008032784 A DE 102008032784A DE 102008032784 A DE102008032784 A DE 102008032784A DE 102008032784 A1 DE102008032784 A1 DE 102008032784A1
Authority
DE
Germany
Prior art keywords
glass
mass
mol
composition
electrical contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102008032784A
Other languages
German (de)
English (en)
Inventor
Jochen Dr.-Ing. Schilm
Mihails Dr. Kusnezoff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to DE102008032784A priority Critical patent/DE102008032784A1/de
Priority to PCT/DE2009/000908 priority patent/WO2010000234A1/fr
Publication of DE102008032784A1 publication Critical patent/DE102008032784A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physics & Mathematics (AREA)
  • Glass Compositions (AREA)
  • Conductive Materials (AREA)
DE102008032784A 2008-07-02 2008-07-02 Zusammensetzung mit pastöser Konsistenz für die Ausbildung elektrischer Kontakte auf einem Silicium-Solarwafer und damit hergestellter Kontakt Withdrawn DE102008032784A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE102008032784A DE102008032784A1 (de) 2008-07-02 2008-07-02 Zusammensetzung mit pastöser Konsistenz für die Ausbildung elektrischer Kontakte auf einem Silicium-Solarwafer und damit hergestellter Kontakt
PCT/DE2009/000908 WO2010000234A1 (fr) 2008-07-02 2009-06-29 Composition à consistance pâteuse pour la formation de contacts électriques sur une tranche solaire de silicium et contact ainsi produit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008032784A DE102008032784A1 (de) 2008-07-02 2008-07-02 Zusammensetzung mit pastöser Konsistenz für die Ausbildung elektrischer Kontakte auf einem Silicium-Solarwafer und damit hergestellter Kontakt

Publications (1)

Publication Number Publication Date
DE102008032784A1 true DE102008032784A1 (de) 2010-03-18

Family

ID=41161356

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008032784A Withdrawn DE102008032784A1 (de) 2008-07-02 2008-07-02 Zusammensetzung mit pastöser Konsistenz für die Ausbildung elektrischer Kontakte auf einem Silicium-Solarwafer und damit hergestellter Kontakt

Country Status (2)

Country Link
DE (1) DE102008032784A1 (fr)
WO (1) WO2010000234A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010037088A1 (de) * 2010-08-20 2012-02-23 Roth & Rau Ag Verfahren zum Erzeugen eines verbesserten Kontaktes zwischen einer silberhaltigen Leitbahn und Silizium
DE102016206345B4 (de) * 2016-04-15 2025-01-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Herstellen von dreidimensionalen Strukturen oder Strukturelementen auf Substratoberflächen

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030047735A1 (en) * 2001-06-28 2003-03-13 Takeshi Kyoda Photoelectric conversion device, glass composition for coating silicon, and insulating coating in contact with silicon
EP1713094A2 (fr) 2005-04-14 2006-10-18 E.I.Du pont de nemours and company Composition(s) de film(s) épais électroconducteur(s), électrode(s) et dispositif(s) semiconducteur(s) faits à partir de celle(s)-ci
WO2006132766A2 (fr) 2005-06-03 2006-12-14 Ferro Corporation Contacts de cellules solaires sans plomb

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7462304B2 (en) * 2005-04-14 2008-12-09 E.I. Du Pont De Nemours And Company Conductive compositions used in the manufacture of semiconductor device
US7435361B2 (en) * 2005-04-14 2008-10-14 E.I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
US20060231802A1 (en) * 2005-04-14 2006-10-19 Takuya Konno Electroconductive thick film composition, electrode, and solar cell formed therefrom
JP4182174B2 (ja) * 2006-03-07 2008-11-19 株式会社村田製作所 導電性ペースト及び太陽電池
US8253011B2 (en) * 2006-08-31 2012-08-28 Shin-Etsu Handotai Co., Ltd. Semiconductor substrate, electrode forming method, and solar cell fabricating method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030047735A1 (en) * 2001-06-28 2003-03-13 Takeshi Kyoda Photoelectric conversion device, glass composition for coating silicon, and insulating coating in contact with silicon
EP1713094A2 (fr) 2005-04-14 2006-10-18 E.I.Du pont de nemours and company Composition(s) de film(s) épais électroconducteur(s), électrode(s) et dispositif(s) semiconducteur(s) faits à partir de celle(s)-ci
WO2006132766A2 (fr) 2005-06-03 2006-12-14 Ferro Corporation Contacts de cellules solaires sans plomb

Also Published As

Publication number Publication date
WO2010000234A1 (fr) 2010-01-07

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
R016 Response to examination communication
R002 Refusal decision in examination/registration proceedings
R006 Appeal filed
R008 Case pending at federal patent court
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20150203