DE1065943B - Process for the production of a planar semiconductor device with protective layer-add. z. Pat. 969,465 - Google Patents

Description

GERMAN PATENT OFFICE

kl. 21g 11/02

INTERNAT. KL. HOlI

94:

S 45103 VIII c / 21g

REGISTRATION DATE: AUGUST 8, 1955

NOTICE THE REGISTRATION AND ISSUE OF THE ADOPTED: SEPTEMBER 24, 1959

in the
tion,

Patent 969,465 is a planar semiconductor device, for example planar semiconductor, planar transistor or the like, with sharp transitions between zones of different conductivity types, e.g. B. one or more pn transitions, which is characterized in that the surface of the semiconductor body is covered at least along the sharp transition or the sharp transitions with a solid protective layer, which is electrically isolated, moisture- proof and permeable. '| p \ tni ^ r ¥ nrhft ^ diifr] i ^J ^ AVTiin.'sipp "foaftet and from an preferably an oxide, at

organic matter,
for example quartz.

The invention relates to a particularly simple and safe method for producing an oxide layer on the semiconductor body from an oxide of the semiconductor base material. The method proposed according to the invention for producing a flat semiconductor arrangement with sharp pn or pnp or npn transitions, in which the surface of the semiconductor body at least along the sharp transition or the sharp transitions with a solid, moisture-impermeable, electrically insulating and the protective layer adhering to the semiconductor surface is that the protective layer is formed by anodic oxidation using phosphoric acid as an electrolyte.

The implementation is such. B. as follows: Anhydrous phosphoric acid is used as the electrolyte. The gerroanium body to be provided with the protective coating is connected as an anode and immersed in the electrolyte with the surface to be coated. The cathode also consists of germanium . The drop in the current to a minimal saturation value shows the end of the layer formation. The insulating property can be adjusted to the desired extent by choosing the voltage that may be gradually increased. Instead of germanium, there are also silicon semiconductor arrangements or semiconductor arrangements made of compounds from TVs. Group of the periodic table with each other or from compounds _of. Elements of the III. _uhd'yj , II. and IV. Group of the Periodic System 'as well as "from semiconducting multiple compounds of the substances mentioned to be treated in the same way.

It has been known to use polymerized glycol borate as an electrolyte in an anodic oxidation treatment of germanium to use. However, this electrolyte leads to the formation of η-conductive germanium Method of manufacture

a surface semiconductor arrangement

with protective layer

Addendum to patent 969 465

Applicant:
Siemens & Halske Aktiengesellschaft,

Berlin and Munich,
Munich 2, Witteisbacherplatz 2

Dipl.-Chem. Georg Rosenberger, Munich,
has been named as the inventor

a p-conductive surface layer, while in the production of the protective layers in the arrangements described in the main patent it is important that the conduction type of the semiconductor surface to be coated is not influenced. ^r This is made of phosphoric acid as an electrolyte, which also has the advantage of "out even when the silicon to the desired surface layer? m.

Claims (1)

PATENT CLAIM: Process for the production of a surface half-liter arrangement with sharp pn or pnp or npn junctions, in which the surface of the semiconductor body is covered at least along the sharp junction or the sharp junctions with a solid, moisture-impermeable, electrically insulating protective layer adhering to the semiconductor surface , according to patent 969 465, characterized in that the protective layer is produced by anodic oxyjdjttiorLtiiiitels phosphoric acid as the electrolyte. Considered publications:
"Das Elektron", Vol. 5, 1951/52, Issue 13/14, p. 429 to 439; "Zeitschrift für Elektrochemie", Vol. 58, 1954, No. S, pp. 283 to 321.