CN203339149U - QFN packaging structure - Google Patents
QFN packaging structure Download PDFInfo
- Publication number
- CN203339149U CN203339149U CN2013203717303U CN201320371730U CN203339149U CN 203339149 U CN203339149 U CN 203339149U CN 2013203717303 U CN2013203717303 U CN 2013203717303U CN 201320371730 U CN201320371730 U CN 201320371730U CN 203339149 U CN203339149 U CN 203339149U
- Authority
- CN
- China
- Prior art keywords
- chip
- metal
- qfn
- utility
- packaging structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H10W72/5449—
-
- H10W72/884—
-
- H10W90/736—
-
- H10W90/756—
Landscapes
- Media Introduction/Drainage Providing Device (AREA)
- Materials For Medical Uses (AREA)
Abstract
本实用新型公开了一种QFN封装结构,其特征在于,包括:一铜支架,中间设计有裸露的金属散热盘,四周设计有替代引脚的金属触点;上层芯片和下层芯片,堆叠于所述金属散热盘上;多根导线,电性连接于上层芯片和下层芯片之间、下层芯片和金属触点之间;封装结构的封装空间内填充的绝缘树脂。本实用新型所述QFN封装结构用金属触点代替传统的引脚,可减少阻抗,提高芯片信息处理频率,同时,铜支架中央底部设计有裸露的金属散热盘,以便芯片在工作时快速传导热量,散热效果好。
The utility model discloses a QFN package structure, which is characterized in that it comprises: a copper bracket, a bare metal cooling plate is designed in the middle, and metal contacts for replacing pins are designed around; an upper layer chip and a lower layer chip are stacked on the On the above-mentioned metal cooling plate; a plurality of wires are electrically connected between the upper chip and the lower chip, between the lower chip and the metal contact; the insulating resin filled in the packaging space of the packaging structure. The QFN packaging structure described in the utility model uses metal contacts instead of traditional pins, which can reduce impedance and increase chip information processing frequency. At the same time, the central bottom of the copper bracket is designed with a bare metal heat sink, so that the chip can quickly conduct heat when it is working. , good cooling effect.
Description
技术领域technical field
本实用新型属于半导体逻辑芯片封装技术领域,具体涉及一种小尺寸芯片、无引脚、散热快的逻辑芯片QFN封装结构。The utility model belongs to the technical field of semiconductor logic chip packaging, in particular to a logic chip QFN packaging structure with a small size chip, no pins and fast heat dissipation.
背景技术Background technique
现有技术中封装的芯片一般较大,在8*8mm以上,采用铜支架底材,有引脚,底部没有裸露的散热盘可供快速散热,而对小尺寸如3*3mm以下的小芯片的也一般沿用大尺寸封装结构,也没有特殊的封装结构来解决散热性差、阻抗较大的问题。Chips packaged in the prior art are generally larger, more than 8*8mm, using a copper support substrate, with pins, and no exposed heat dissipation plate at the bottom for rapid heat dissipation, and for small chips with a small size such as 3*3mm or less The general use of large-size package structure, and there is no special package structure to solve the problem of poor heat dissipation and large impedance.
发明内容Contents of the invention
本实用新型的目的是提供一种适用于小尺寸芯片、无引脚、散热快的逻辑芯片QFN封装结构。The purpose of the utility model is to provide a logic chip QFN packaging structure suitable for small-sized chips, without pins and fast heat dissipation.
为实现上述实用新型目的,本实用新型采用了如下技术方案:For realizing above-mentioned utility model purpose, the utility model has adopted following technical scheme:
一种QFN封装结构,其特征在于,包括:A kind of QFN encapsulation structure is characterized in that, comprises:
一铜支架,中间设计有裸露的金属散热盘,四周设计有替代引脚的金属触点;A copper bracket with a bare metal cooling plate in the middle and metal contacts instead of pins around it;
至少一个芯片,配置于所述铜支架上,所述金属散热盘即粘贴于芯片下方;At least one chip is arranged on the copper support, and the metal cooling plate is pasted under the chip;
多根导线,电性连接于芯片和金属触点之间;导线可采用金线。A plurality of wires are electrically connected between the chip and the metal contacts; the wires can be gold wires.
封装结构的封装空间内填充的绝缘树脂。The insulating resin filled in the packaging space of the packaging structure.
进一步的,所述芯片和芯片或者芯片和铜支架用胶带粘接。Further, the chip and the chip or the chip and the copper support are bonded with an adhesive tape.
进一步的,所述芯片的尺寸≤3mm*3mm。Further, the size of the chip is ≤3mm*3mm.
制作上述QFN封装结构的工艺流程,包括下列步骤:The process flow for making the above-mentioned QFN package structure includes the following steps:
芯片研磨与切割->芯片堆叠->金线焊接->树脂合成->电镀->切割。Chip grinding and dicing->chip stacking->gold wire bonding->resin synthesis->plating->cutting.
首先芯片研磨到封装需要的厚度,并切割成单个元件,然后通过胶带连接芯片与芯片,芯片与铜支架,焊接金线,连接芯片与基板电子线路,树脂合成整个腔体保护内部各个器件,背面金属触点以及焊盘镀锡,以便更好的与PCB板连接。为了防止铜氧化和防止出现树脂与铜支架脱层,封装过程部分工艺中应用表面特殊处理技术,利用氮气,氢气等以及高能量清洗铜支架表面杂质,还原表面氧化,以达到增强表面粗糙度,增强表面与树脂结合力。First, the chip is ground to the thickness required for the package, and cut into individual components, and then the chip and the chip, the chip and the copper bracket are connected by tape, the gold wire is welded, the chip is connected to the electronic circuit of the substrate, and the resin is synthesized into the entire cavity to protect the internal components. Metal contacts and pads are tinned for better connection to the PCB. In order to prevent copper oxidation and delamination between the resin and the copper bracket, special surface treatment technology is applied in part of the packaging process, using nitrogen, hydrogen, etc. and high energy to clean the surface impurities of the copper bracket and reduce surface oxidation to achieve enhanced surface roughness. Enhance the bonding force between surface and resin.
实用新型优点:Utility model advantages:
本实用新型所述QFN封装结构用金属触点代替传统的引脚,可减少阻抗,提高芯片信息处理频率,同时,铜支架中央底部设计有裸露的金属散热盘,以便芯片在工作时快速传导热量,散热效果好。The QFN packaging structure described in the utility model uses metal contacts instead of traditional pins, which can reduce impedance and increase chip information processing frequency. At the same time, the central bottom of the copper bracket is designed with a bare metal heat sink, so that the chip can quickly conduct heat when it is working. , good cooling effect.
附图说明Description of drawings
图1为本实用新型QFN封装结构的剖面图;Fig. 1 is the sectional view of the utility model QFN packaging structure;
图2为本实用新型QFN封装结构的俯视图。FIG. 2 is a top view of the QFN package structure of the present invention.
其中,1、金属散热盘;2、芯片;3、金属触点;4、金线;5、绝缘树脂;6、铜支架。Among them, 1. Metal heat sink; 2. Chip; 3. Metal contact; 4. Gold wire; 5. Insulating resin; 6. Copper bracket.
具体实施方式Detailed ways
以下结合附图及一优选实施例对本实用新型的技术方案作进一步的说明。The technical solution of the utility model will be further described below in conjunction with the accompanying drawings and a preferred embodiment.
实施例:Example:
如图1~图2所示:一种QFN封装结构,包括:As shown in Figures 1 to 2: a QFN package structure, including:
一铜支架6,中间设计有裸露的金属散热盘1,四周设计有金属触点3替代引脚的作用;A copper bracket 6, with a bare metal cooling plate 1 designed in the middle, and metal contacts 3 designed around it to replace pins;
一芯片2,配置于所述铜支架6上,金属散热盘1即粘贴于芯片2下方;A chip 2 is arranged on the copper bracket 6, and the metal cooling plate 1 is pasted under the chip 2;
多根金线4,电性连接于芯片2和金属触点3之间;A plurality of gold wires 4 are electrically connected between the chip 2 and the metal contact 3;
封装结构的封装空间内填充的绝缘树脂5。The insulating resin 5 filled in the packaging space of the packaging structure.
所述芯片2和铜支架6用胶带粘接。The chip 2 and the copper support 6 are bonded with adhesive tape.
所述芯片2的尺寸为3mm*3mm。。The size of the chip 2 is 3mm*3mm. .
需要指出的是,以上所述者仅为用以解释本实用新型之较佳实施例,并非企图据以对本实用新型作任何形式上之限制,是以,凡有在相同之实用新型精神下所作有关本实用新型之任何修饰或变更,皆仍应包括在本实用新型意图保护之范畴。It should be pointed out that the above descriptions are only used to explain the preferred embodiments of the utility model, and are not intended to limit the utility model in any form. Any modifications or changes related to the utility model should still be included in the intended protection scope of the utility model.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203717303U CN203339149U (en) | 2013-06-26 | 2013-06-26 | QFN packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203717303U CN203339149U (en) | 2013-06-26 | 2013-06-26 | QFN packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203339149U true CN203339149U (en) | 2013-12-11 |
Family
ID=49707811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013203717303U Expired - Fee Related CN203339149U (en) | 2013-06-26 | 2013-06-26 | QFN packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203339149U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109037182A (en) * | 2018-09-12 | 2018-12-18 | 深圳三地芯电子有限责任公司 | Chip-packaging structure and memory device |
-
2013
- 2013-06-26 CN CN2013203717303U patent/CN203339149U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109037182A (en) * | 2018-09-12 | 2018-12-18 | 深圳三地芯电子有限责任公司 | Chip-packaging structure and memory device |
| CN109037182B (en) * | 2018-09-12 | 2024-05-03 | 深圳三地一芯电子股份有限公司 | Chip packaging structure and memory device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204375722U (en) | A kind of semiconductor package | |
| TW201250942A (en) | Integrated circuit packaging system with routed circuit lead array and method of manufacture thereof | |
| CN104009006A (en) | Packaging substrate and its manufacturing method and semiconductor package and its manufacturing method | |
| CN105870115A (en) | Multi-chip 3D packaging structure | |
| CN102842550B (en) | The DFN encapsulating structure of power mosfet chip | |
| CN203339149U (en) | QFN packaging structure | |
| CN203055893U (en) | Re-wiring thermal enhanced FCQFN packaging device | |
| CN202142517U (en) | Semiconductor heat dissipating packaging structure | |
| CN104681544A (en) | Multichip QFN (QuadFlatNoLead) packaging structure | |
| CN203644753U (en) | SOT-23 packaging structure | |
| CN202196772U (en) | Printed circuit board chip packaging radiating structure | |
| CN206697450U (en) | Suitable for power MOS novel plastic-package structure | |
| CN105845633A (en) | Multi-chip 3D packaging technology | |
| CN202796930U (en) | Packaging body for metal-oxide-semiconductor field effect transistor (MOSFET) chip | |
| CN203118935U (en) | DFN (dual flat-pack no-lead) package structure for rectifier chip | |
| CN206789535U (en) | A kind of fan-out package structure of power electronic devices | |
| CN203118936U (en) | Package structure for rectifier semiconductor chip | |
| CN104681507A (en) | Round QFN (Quad Flat No Lead) package structure | |
| CN204792767U (en) | Diode Power Module | |
| CN203118939U (en) | Square flat type power device capsule | |
| CN103325741A (en) | A package based on a substrate and adopting liquid plastic sealing and its manufacturing process | |
| CN202423270U (en) | Integrated circuit lead frame | |
| CN103325757A (en) | A package based on a substrate using slotting technology and its manufacturing process | |
| CN211238226U (en) | Power Semiconductor Packaged Devices | |
| CN202796931U (en) | Device structure of power metal-oxide-semiconductor field effect transistor (MOSFET) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131211 Termination date: 20210626 |