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CN203118939U - Square flat type power device capsule - Google Patents

Square flat type power device capsule Download PDF

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Publication number
CN203118939U
CN203118939U CN2013201319195U CN201320131919U CN203118939U CN 203118939 U CN203118939 U CN 203118939U CN 2013201319195 U CN2013201319195 U CN 2013201319195U CN 201320131919 U CN201320131919 U CN 201320131919U CN 203118939 U CN203118939 U CN 203118939U
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area
rectifier chip
welding
conductive pad
power device
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胡乃仁
杨小平
李国发
钟利强
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Suzhou Good Ark Electronics Co Ltd
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Suzhou Good Ark Electronics Co Ltd
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    • H10W72/07336
    • H10W72/07653
    • H10W74/00
    • H10W90/766

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Abstract

本实用新型公开一种四方扁平型功率器件封装体,包括导电基盘、导电焊盘,所述导电基盘由散热区和基盘引脚区组成,此基盘引脚区由若干个相间排列的负极引脚组成,此负极引脚一端与散热区端面电连接,所述散热区位于整流芯片正下方且与整流芯片下表面之间通过软焊料层电连接;所述导电焊盘位于整流芯片另一侧,导电焊盘包括焊接区和至少两个引脚,焊接区与引脚的连接处具有一折弯部,从而使得焊接区高于引脚;一铝导体带跨接于所述整流芯片的正极与导电焊盘的焊接区之间;所述铝导体带与整流芯片的焊接条至少为2条且相间排列。本实用新型功率器件封装体有利于减少欧姆接触电阻,提高了电性能指标,同时也减少热量的产生。

Figure 201320131919

The utility model discloses a square flat power device package body, which comprises a conductive base plate and a conductive pad. The conductive base plate is composed of a heat dissipation area and a pin area of the base plate. One end of the negative pin is electrically connected to the end face of the heat dissipation area, the heat dissipation area is located directly below the rectifier chip and is electrically connected to the lower surface of the rectifier chip through a soft solder layer; the conductive pad is located on the rectifier chip On the other side, the conductive pad includes a welding area and at least two pins, and the connection between the welding area and the pins has a bent portion, so that the welding area is higher than the pins; an aluminum conductor strip is connected across the rectifier Between the positive electrode of the chip and the welding area of the conductive pad; there are at least two welding strips between the aluminum conductor strip and the rectifier chip and arranged alternately. The package body of the power device of the utility model is beneficial to reduce the ohmic contact resistance, improve the electric performance index, and reduce the generation of heat at the same time.

Figure 201320131919

Description

四方扁平型功率器件封装体Quad Flat Power Device Package

技术领域 technical field

本实用新型涉及功率器件技术领域,具体涉及一种四方扁平型功率器件封装体。  The utility model relates to the technical field of power devices, in particular to a square flat power device packaging body. the

背景技术 Background technique

随着电子产品的发展,例如笔记本电脑、手机、迷你CD、掌上电脑、CPU、数码照相机等消费类电子产品越来越向小型化方向发展。随着产品的做小做薄,工IC中的数百万个晶体管所产生的热量如何散发出去就变为一个不得不考虑的问题。现有技术中,虽然可以通过提升工IC制程能力来降低电压等方式来减小发热量,但是仍然不能避免发热密度增加的趋势。散热问题不解决,会使得工器件因过热而影响到产品的可靠性,严重地会缩短产品寿命甚至造成产品损毁。  With the development of electronic products, consumer electronic products such as notebook computers, mobile phones, mini-CDs, palmtop computers, CPUs, and digital cameras are becoming more and more miniaturized. As products become smaller and thinner, how to dissipate the heat generated by millions of transistors in industrial ICs becomes a problem that has to be considered. In the prior art, although the calorific value can be reduced by improving the IC manufacturing process capability and reducing the voltage, the trend of increasing the calorific density cannot be avoided. If the heat dissipation problem is not solved, the reliability of the product will be affected due to overheating of the industrial device, which will seriously shorten the product life and even cause product damage. the

现有技术,如附图1所示是一种典型的DFN封装结构的剖面示意图,包括芯片900,散热片920、引线框架930、多个导线940,以及包裹上述结构的绝缘胶950。芯片900粘附在散热片920上,引线框架930具有多个相互绝缘的管脚,芯片900表面的焊盘通过导线940连接在引线框架930。相应的管脚上。绝缘胶950将上述结构全部包裹起来,以将其同外界隔离,仅将引线框架930的各个管脚和散热片920与芯片900相对的表面暴露在空气中。引线框架930暴露出来的管脚用于实现被封装的芯片900同外界的电学连接,而散热片920暴露出来的作用在于将芯片900工作时产生的热量通过暴露的表面散发到环境中去;仍然存在体积大而不利于散热的技术问题。  The prior art, as shown in FIG. 1 , is a schematic cross-sectional view of a typical DFN package structure, including a chip 900, a heat sink 920, a lead frame 930, a plurality of wires 940, and insulating glue 950 wrapping the above structure. The chip 900 is adhered to the heat sink 920 , the lead frame 930 has a plurality of mutually insulated pins, and the pads on the surface of the chip 900 are connected to the lead frame 930 through wires 940 . on the corresponding pins. The insulating glue 950 wraps all the above-mentioned structures to isolate them from the outside world, and only the pins of the lead frame 930 and the surface of the heat sink 920 opposite to the chip 900 are exposed to the air. The exposed pins of the lead frame 930 are used to realize the electrical connection between the packaged chip 900 and the outside world, and the exposed function of the heat sink 920 is to dissipate the heat generated by the chip 900 to the environment through the exposed surface; still There is a technical problem that the volume is large and is not conducive to heat dissipation. the

发明内容 Contents of the invention

本实用新型目的是提供一种四方扁平型功率器件封装体,此功率器件封装体有利于减少欧姆接触电阻,提高了电性能指标,同时也减少热量的产生;且有效避免了由于连接正极的铝导体带在使用中容易断的技术缺陷,从而延长了产品的使用寿命并提高了可靠性。  The purpose of the utility model is to provide a square flat power device package, which is beneficial to reduce the ohmic contact resistance, improve the electrical performance index, and reduce the generation of heat at the same time; The technical defect that the conductor strip is easy to break during use, thus prolonging the service life of the product and improving the reliability. the

为达到上述目的,本实用新型采用的技术方案是:一种四方扁平型功率器件封装体,包括整流芯片、包覆于整流芯片四周的环氧树脂层,还包括导电基盘、导电焊盘,所述导电基盘由散热区和基盘引脚区组成,此基盘引脚区由若干个相间排列的负极引脚组成,此负极引脚一端与散热区端面电连接,所述散热区位于整流芯片正下方且与整流芯片下表面之间通过软焊料层电连接;所述导电焊盘位于整流芯片另一侧,导电焊盘包括焊接区和至少两个引脚,焊接区与引脚的连接处具有一折弯部,从而使得焊接区高于引脚;一铝导体带跨接于所述整流芯片的正极与导电焊盘的焊接区之间;所述铝导体带与整流芯片的焊接条至少为2条且相间排列。  In order to achieve the above purpose, the technical solution adopted by the utility model is: a square flat power device package, including a rectifier chip, an epoxy resin layer wrapped around the rectifier chip, and a conductive base plate, a conductive pad, The conductive base plate is composed of a heat dissipation area and a base plate pin area. The base plate pin area is composed of several negative pins arranged alternately. One end of the negative pin is electrically connected to the end face of the heat dissipation area. The heat dissipation area is located at The rectifier chip is directly below the rectifier chip and is electrically connected to the lower surface of the rectifier chip through a soft solder layer; the conductive pad is located on the other side of the rectifier chip, and the conductive pad includes a welding area and at least two pins, and the connection between the welding area and the pins The connection has a bent portion, so that the welding area is higher than the pin; an aluminum conductor strip spans between the positive electrode of the rectifier chip and the welding area of the conductive pad; the welding of the aluminum conductor strip and the rectifier chip There are at least 2 strips arranged alternately. the

上述技术方案中进一步改进的方案如下:  The scheme of further improvement in the above-mentioned technical scheme is as follows:

1、上述方案中,所述导电焊盘各自的焊接区与整流芯片位于同一水平面。 1. In the above solution, the welding areas of the conductive pads are located on the same level as the rectifier chip.

2、上述方案中,所述负极引脚的数目为四根。  2. In the above solution, the number of the negative pins is four. the

3、上述方案中,所述铝导体带宽厚比为1:9~14。  3. In the above solution, the bandwidth-to-thickness ratio of the aluminum conductor is 1:9~14. the

由于上述技术方案运用,本实用新型与现有技术相比具有下列优点和效果:  Due to the application of the above-mentioned technical solutions, the utility model has the following advantages and effects compared with the prior art:

1、本实用新型四方扁平型功率器件封装体,其整流芯片的正极与导电焊盘的焊接区之间跨接有铝导体带,且所述铝导体带与整流芯片的正极的焊接条至少为2条且相间排列,这种结构设计从而有利于减少欧姆接触电阻,提高了电性能指标,同时也减少热量的产生。 1. The square flat power device package body of the utility model has an aluminum conductor strip bridged between the positive pole of the rectifier chip and the welding area of the conductive pad, and the welding strip between the aluminum conductor strip and the positive pole of the rectifier chip is at least Two strips are arranged alternately. This structural design is beneficial to reduce the ohmic contact resistance, improve the electrical performance index, and reduce the generation of heat at the same time.

2、本实用新型四方扁平型功率器件封装体,其同时兼备了现有技术中导电焊盘、散热片和基岛三个部件功能,既有利于进一步缩小器件的体积,也减少器件中部件的数目,同时由于散热区和基盘引脚区为一个整体,提高了电性能的稳定性。  2. The quadrilateral flat power device package of the present invention has both the functions of the conductive pad, heat sink and base island in the prior art, which not only helps to further reduce the volume of the device, but also reduces the size of the components in the device. At the same time, because the heat dissipation area and the substrate pin area are integrated, the stability of electrical performance is improved. the

3、本实用新型四方扁平型功率器件封装体中焊接区与引脚区的连接处具有一折弯部,从而使得焊接区高于引脚区,并保证了导电焊盘的焊接区与整流芯片的正极在同一水平面,从而有效避免了由于连接正极的铝导体带在使用中容易断的技术缺陷,从而延长了产品的使用寿命并提高了可靠性。  3. In the square flat power device package of the present invention, there is a bending part at the junction of the welding area and the lead area, so that the welding area is higher than the lead area, and ensures the connection between the welding area of the conductive pad and the rectifier chip. The positive poles are at the same level, which effectively avoids the technical defect that the aluminum conductor strip connected to the positive poles is easy to break during use, thereby prolonging the service life of the product and improving reliability. the

附图说明 Description of drawings

图1为现有技术结构示意图;  Fig. 1 is the prior art structure schematic diagram;

图2为本实用新型四方扁平型功率器件封装体结构示意图; Fig. 2 is a schematic diagram of the structure of the square flat power device package of the present invention;

图3为附图3中沿A-A线的剖视图。    Fig. 3 is a sectional view along line A-A in Fig. 3 . the

以上附图中: 1、整流芯片;2、环氧树脂层;3、导电基盘;31、散热区;32、基盘引脚区;321、漏极引脚;4、导电焊盘;5、铝导体带;6、软焊料层;7、焊接区;8、引脚区;9、折弯部;10、焊接条。 In the above drawings: 1. Rectifier chip; 2. Epoxy resin layer; 3. Conductive base plate; 31. Heat dissipation area; 32. Base plate pin area; 321. Drain pin; 4. Conductive pad; 5 1. Aluminum conductor strip; 6. Soft solder layer; 7. Welding area; 8. Pin area; 9. Bending part; 10. Welding strip.

具体实施方式 Detailed ways

下面结合实施例对本实用新型作进一步描述:  Below in conjunction with embodiment the utility model is further described:

实施例1:一种四方扁平型功率器件封装体,包括整流芯片1、包覆于整流芯片1四周的环氧树脂层2,还包括导电基盘3、导电焊盘4,所述导电基盘3由散热区31和基盘引脚区32组成,此基盘引脚区32由若干个相间排列的负极引脚321组成,此负极引脚321一端与散热区31端面电连接,所述散热区31位于整流芯片1正下方且与整流芯片1下表面之间通过软焊料层6电连接;所述导电焊盘4位于整流芯片1另一侧,导电焊盘4包括焊接区7和至少两个引脚8,焊接区7与引脚的连接处具有一折弯部9,从而使得焊接区7高于引脚8;一铝导体带5跨接于所述整流芯片1的正极与导电焊盘4的焊接区7之间;所述铝导体带5与整流芯片1的焊接条10至少为2条且相间排列;所述软焊料层6由以下质量百分含量的组分组成:铅92.5%、锡5%、银2.5%;所述铝导体带5宽厚比为1:10~15。 Embodiment 1: A square flat power device package, including a rectifier chip 1, an epoxy resin layer 2 wrapped around the rectifier chip 1, and a conductive substrate 3, a conductive pad 4, the conductive substrate 3. It is composed of a heat dissipation area 31 and a base plate pin area 32. The base plate pin area 32 is composed of several negative pole pins 321 arranged alternately. One end of the negative pole pin 321 is electrically connected to the end surface of the heat dissipation area 31. The heat dissipation The region 31 is located directly below the rectifier chip 1 and is electrically connected to the lower surface of the rectifier chip 1 through a soft solder layer 6; the conductive pad 4 is located on the other side of the rectifier chip 1, and the conductive pad 4 includes a welding area 7 and at least two There is a pin 8, and the connection between the welding area 7 and the pin has a bent portion 9, so that the welding area 7 is higher than the pin 8; an aluminum conductor strip 5 is connected across the positive pole of the rectifier chip 1 and the conductive welding. Between the welding areas 7 of the disk 4; the aluminum conductor strips 5 and the welding strips 10 of the rectifier chip 1 are at least two and arranged alternately; the soft solder layer 6 is composed of the following components in mass percentage: lead 92.5 %, tin 5%, silver 2.5%; the width-thickness ratio of the aluminum conductor strip 5 is 1:10~15.

上述导电焊盘4各自的焊接区7与整流芯片1位于同一水平面;上述铝导体带5宽厚比为1:12。  The welding areas 7 of the conductive pads 4 are located on the same level as the rectifier chip 1 ; the width-thickness ratio of the aluminum conductor strips 5 is 1:12. the

实施例2:一种四方扁平型功率器件封装体,包括整流芯片1、包覆于整流芯片1四周的环氧树脂层2,其特征在于:还包括导电基盘3、导电焊盘4,所述导电基盘3由散热区31和基盘引脚区32组成,此基盘引脚区32由若干个相间排列的负极引脚321组成,此负极引脚321一端与散热区31端面电连接,所述散热区31位于整流芯片1正下方且与整流芯片1下表面之间通过软焊料层6电连接;所述导电焊盘4位于整流芯片1另一侧,导电焊盘4包括焊接区7和至少两个引脚8,焊接区7与引脚的连接处具有一折弯部9,从而使得焊接区7高于引脚8;一铝导体带5跨接于所述整流芯片1的正极与导电焊盘4的焊接区7之间;所述铝导体带5与整流芯片1的焊接条10至少为2条且相间排列。  Embodiment 2: A square flat power device package, including a rectifier chip 1, an epoxy resin layer 2 wrapped around the rectifier chip 1, characterized in that: it also includes a conductive substrate 3, a conductive pad 4, the The conductive base plate 3 is composed of a heat dissipation area 31 and a base plate pin area 32. The base plate pin area 32 is composed of a number of negative pins 321 arranged alternately. One end of the negative pin 321 is electrically connected to the end face of the heat dissipation area 31. , the heat dissipation area 31 is located directly below the rectifier chip 1 and is electrically connected to the lower surface of the rectifier chip 1 through a soft solder layer 6; the conductive pad 4 is located on the other side of the rectifier chip 1, and the conductive pad 4 includes a welding area 7 and at least two pins 8, the connection between the welding area 7 and the pins has a bent portion 9, so that the welding area 7 is higher than the pins 8; an aluminum conductor strip 5 is connected across the rectifier chip 1 Between the positive electrode and the welding area 7 of the conductive pad 4; the aluminum conductor strip 5 and the welding strip 10 of the rectifier chip 1 are at least two and arranged alternately. the

上述导电焊盘4各自的焊接区7与整流芯片1位于同一水平面;上述负极引脚321的数目为四根;上述铝导体带5宽厚比为1:10。  The welding areas 7 of the conductive pads 4 are located on the same level as the rectifier chip 1; the number of the negative pins 321 is four; the width-thickness ratio of the aluminum conductor strip 5 is 1:10. the

采用上述四方扁平型功率器件封装体时,其整流芯片的正极与导电焊盘的焊接区之间跨接有铝导体带,且所述铝导体带与整流芯片的正极的焊接条至少为2条且相间排列,这种结构设计从而有利于减少欧姆接触电阻,提高了电性能指标,同时也减少热量的产生;其次,其同时兼备了现有技术中导电焊盘、散热片和基岛三个部件功能,既有利于进一步缩小器件的体积,也减少器件中部件的数目,同时由于散热区和基盘引脚区为一个整体,提高了电性能的稳定性;再次,功率整流芯片封装体中焊接区与引脚区的连接处具有一折弯部,从而使得焊接区高于引脚区,并保证了导电焊盘的焊接区与整流芯片的正极在同一水平面,从而有效避免了由于连接正极的铝导体带在使用中容易断的技术缺陷,从而延长了产品的使用寿命并提高了可靠性。  When the above-mentioned square flat power device package is used, an aluminum conductor strip is connected between the positive pole of the rectifier chip and the welding area of the conductive pad, and there are at least two welding strips between the aluminum conductor strip and the positive pole of the rectifier chip And arranged alternately, this structural design is beneficial to reduce ohmic contact resistance, improve electrical performance indicators, and reduce heat generation; secondly, it also has the three functions of conductive pads, heat sinks and base islands in the prior art. The functions of the components are not only beneficial to further reduce the volume of the device, but also reduce the number of components in the device. At the same time, because the heat dissipation area and the pin area of the substrate are integrated, the stability of the electrical performance is improved; again, the power rectification chip package There is a bending part at the connection between the welding area and the pin area, so that the welding area is higher than the pin area, and ensures that the welding area of the conductive pad is at the same level as the positive electrode of the rectifier chip, thereby effectively avoiding the problem of being connected to the positive electrode. The technical defect that the aluminum conductor strip is easy to break during use, thus prolonging the service life of the product and improving the reliability. the

上述实施例只为说明本实用新型的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本实用新型的内容并据以实施,并不能以此限制本实用新型的保护范围。凡根据本实用新型精神实质所作的等效变化或修饰,都应涵盖在本实用新型的保护范围之内。  The above-mentioned embodiments are only to illustrate the technical concept and characteristics of the present utility model, and its purpose is to enable those familiar with this technology to understand the content of the present utility model and implement it accordingly, and not to limit the protection scope of the present utility model. All equivalent changes or modifications made according to the spirit of the utility model shall fall within the protection scope of the utility model. the

Claims (4)

1. 一种四方扁平型功率器件封装体,包括整流芯片(1)、包覆于整流芯片(1)四周的环氧树脂层(2),其特征在于:还包括导电基盘(3)、导电焊盘(4),所述导电基盘(3)由散热区(31)和基盘引脚区(32)组成,此基盘引脚区(32)由若干个相间排列的负极引脚(321)组成,此负极引脚(321)一端与散热区(31)端面电连接,所述散热区(31)位于整流芯片(1)正下方且与整流芯片(1)下表面之间通过软焊料层(6)电连接;所述导电焊盘(4)位于整流芯片(1)另一侧,导电焊盘(4)包括焊接区(7)和至少两个引脚(8),焊接区(7)与引脚的连接处具有一折弯部(9),从而使得焊接区(7)高于引脚(8);一铝导体带(5)跨接于所述整流芯片(1)的正极与导电焊盘(4)的焊接区(7)之间;所述铝导体带(5)与整流芯片(1)的焊接条(10)至少为2条且相间排列。 1. A square flat power device package, comprising a rectifier chip (1), an epoxy resin layer (2) wrapped around the rectifier chip (1), characterized in that it also includes a conductive substrate (3), The conductive pad (4), the conductive substrate (3) is composed of a heat dissipation area (31) and a substrate pin area (32), and the substrate pin area (32) is composed of several negative pins arranged alternately (321), one end of the negative pin (321) is electrically connected to the end surface of the heat dissipation area (31), and the heat dissipation area (31) is located directly below the rectifier chip (1) and passes through the lower surface of the rectifier chip (1) The soft solder layer (6) is electrically connected; the conductive pad (4) is located on the other side of the rectifier chip (1), the conductive pad (4) includes a welding area (7) and at least two pins (8), soldering There is a bending part (9) at the connection between the area (7) and the pin, so that the welding area (7) is higher than the pin (8); an aluminum conductor strip (5) is connected across the rectifier chip (1 ) and the welding area (7) of the conductive pad (4); at least two welding strips (10) of the aluminum conductor strip (5) and the rectifier chip (1) are arranged alternately. 2. 根据权利要求1所述的功率器件封装体,其特征在于:所述导电焊盘(4)各自的焊接区(7)与整流芯片(1)位于同一水平面。 2. The power device package according to claim 1, characterized in that: the respective welding areas (7) of the conductive pads (4) are located on the same level as the rectifier chip (1). 3. 根据权利要求1所述的功率器件封装体,其特征在于:所述负极引脚(321)的数目为四根。 3. The power device package according to claim 1, characterized in that: the number of said negative pins (321) is four. 4. 根据权利要求1所述的功率器件封装体,其特征在于:所述铝导体带(5)宽厚比为1:9~14。 4. The power device package according to claim 1, characterized in that: the width-thickness ratio of the aluminum conductor strip (5) is 1:9~14.
CN2013201319195U 2013-03-22 2013-03-22 Square flat type power device capsule Expired - Lifetime CN203118939U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106024745A (en) * 2016-07-01 2016-10-12 长电科技(宿迁)有限公司 Pin mounting structure of semiconductor and welding method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106024745A (en) * 2016-07-01 2016-10-12 长电科技(宿迁)有限公司 Pin mounting structure of semiconductor and welding method thereof

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