CN1988191A - Green light quantum point electroluminescence device and its prepairng method - Google Patents
Green light quantum point electroluminescence device and its prepairng method Download PDFInfo
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- CN1988191A CN1988191A CNA2006101300615A CN200610130061A CN1988191A CN 1988191 A CN1988191 A CN 1988191A CN A2006101300615 A CNA2006101300615 A CN A2006101300615A CN 200610130061 A CN200610130061 A CN 200610130061A CN 1988191 A CN1988191 A CN 1988191A
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- 238000000034 method Methods 0.000 title claims description 6
- 238000005401 electroluminescence Methods 0.000 title abstract 3
- 238000002360 preparation method Methods 0.000 claims abstract description 12
- 238000004528 spin coating Methods 0.000 claims abstract description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 229910001080 W alloy Inorganic materials 0.000 claims description 4
- 239000012459 cleaning agent Substances 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 238000007738 vacuum evaporation Methods 0.000 claims description 4
- 239000002096 quantum dot Substances 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 7
- 239000002994 raw material Substances 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 6
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开绿光量子点电致发光器件及其制备方法，本发明以ZnS∶Cu/CaS，CaZnS∶Tb/ZnS绿光量子点为主体发光材料，以PVK为成膜材料，在导电玻璃ITO表面利用旋转涂覆，将原料制成一定厚度的薄膜，得到具有如下结构的器件：ITO/PVK∶ZnS∶Cu/CaS，CaZnS∶Tb/ZnS(y nm)/Al(z nm)。该绿光器件采用单层的简单结构，具有制备工艺简单、重复性好的特点；该绿光量子点电致发光器件适于作为绿光显示器件，同时它比一般的单色光源具有更小的功耗，具有更高的亮度。The invention discloses a green light quantum dot electroluminescence device and a preparation method thereof. The invention uses ZnS: Cu/CaS, CaZnS: Tb/ZnS green light quantum dots as the main luminescent material, PVK as the film-forming material, and uses Spin coating, the raw material is made into a thin film with a certain thickness, and a device with the following structure is obtained: ITO/PVK:ZnS:Cu/CaS, CaZnS:Tb/ZnS(y nm)/Al(z nm). The green light device adopts a single-layer simple structure, and has the characteristics of simple preparation process and good repeatability; the green light quantum dot electroluminescence device is suitable for a green light display device, and it has a smaller size than a general monochromatic light source power consumption, with higher brightness.
Description
[technical field]
Patent of the present invention relates to a kind of novel flat-plate escope spare---green light quantum point electroluminescent device and preparation method thereof.
[background technology]
Quantum dot is accurate zero-dimension nano semi-conducting material, and it is made of a small amount of atom or atomic group, and three dimension scale is at 1～10nm usually.Because the influence of size quantum effect and dielectric confinement effect demonstrates unique physics and chemical characteristics such as fluorescent characteristic, makes quantum dot have broad application prospects at aspects such as optoelectronics and biology.Advantages such as quanta point electroluminescent device has low-power consumption, high efficiency, response speed is fast and in light weight can the large tracts of land film forming, is a kind of photonic device with huge learning value and good commercial promise.More options ZnS coats the luminescent layer of CdSe quantum dot as electroluminescent device in the world aspect material, but the toxicity of cadmium (Cd) is bigger, can enter human body through food, water or air, and human body is produced serious toxic action.Given this, European Union forbade using cadmium materials such as (Cadmium) by hazardous substance illegal instruction (RoHS) in the electronic motor equipment in electronic product from July 1st, 2006.So developing novel environment friendly quantum electric material is the direction of quanta point electroluminescent device development.
[summary of the invention]
The objective of the invention is provides a kind of preparation method and device of green light quantum point electroluminescent device in order to overcome the deficiencies in the prior art.The present invention is the luminescent layer material with the green light quantum point that does not contain cadmium toxic components such as (Cd) and have a good thermal stability, and utilizes the good film forming of polymer, realizes simple layer, plate green light quantum point electroluminescent device simple in structure.
Green light quantum point electroluminescent device provided by the invention is characterized in that this luminescent device is made up of following each layer successively from bottom to top:
The ito anode conductive glass layer; Luminescent layer is the ZnS:Cu/CaS that is dissolved in PVK, the CaZnS:Tb/ZnS green light quantum point; Metal A l negative electrode.
The present invention also provides a kind of preparation method of above-mentioned green light quantum point electroluminescent device, comprising:
(1) after the ito glass that will be etched into the 5mm*60mm bar shaped cleans in cleaning agent repeatedly, soaks and ultrasonic cleaning, dried for standby in IR bake at last through isopropyl alcohol, acetone and chloroformic solution respectively again;
(2) PVK is dissolved in the chloroformic solution of 1～2mg/ml, with ZnS:Cu/CaS, the CaZnS:Tb/ZnS quantum dot is 1: 1～3: 1 by mass ratio, is dissolved in the chloroformic solution of 1～2mg/ml, and two kinds of solution are mixed, and adopts the spin coating method film forming; Low speed 1000～1400rpm, film formation time 10～20s, high speed 3000～4000rpm, film formation time 10～30s was placed on drier interior 3～10 hours after finishing;
(3) preparation of Al negative electrode is adopted to divide on tungsten alloy stove silk and is hung the long AL silk of about 1～2cm, by the bar shaped mask plate, and vacuum evaporation skim bar shaped Al on luminescent layer, vacuum degree is greater than 8 * 10
-4Pa., evaporation current is 10～30A, and evaporation time is 10～20 minutes;
(4) with bar shaped ito anodes all in the above-mentioned device of making one termination dc power anode, all bar shaped Al negative electrode one termination dc power cathodes obtain the dot matrix green light quantum point electroluminescent device.
Advantage of the present invention and good effect: the invention provides a kind of green light quantum point electroluminescent device, this green device adopts the simple structure of individual layer, has that preparation technology is simple, the characteristics of good reproducibility; This green light quantum point electroluminescent device is suitable for as the green glow display device, and it has littler power consumption than general monochromatic source simultaneously, has higher brightness.
[description of drawings]
Fig. 1 is a green light quantum point electroluminescent device concrete structure schematic diagram;
[embodiment]
The present invention is with ZnS:Cu/CaS, the CaZnS:Tb/ZnS green light quantum point is the main body luminescent material, and utilize the good film forming of polymer P VK (polyvinylcarbazole), with polymer P VK as filmogen, utilize rotation to apply on electro-conductive glass ITO surface, to make certain thickness film, obtain having the device of following structure: ITO/PVK:ZnS:Cu/CaS, CaZnS:Tb/ZnS (y nm)/Al (z nm); Wherein, 30≤y≤60nm; 60≤z≤150nm, ZnS:Cu/CaS in the luminescent layer, the mass ratio of CaZnS:Tb/ZnS quantum dot is between 1: 1～3: 1.The respective material molecular formula is as follows:
Embodiment 1:
(1) after the ito glass that will be etched into the 5mm*60mm bar shaped cleans in cleaning agent repeatedly, soaks and ultrasonic cleaning, dried for standby in IR bake at last through isopropyl alcohol, acetone and chloroformic solution respectively again;
(2) PVK is dissolved in the chloroformic solution of 1.2mg/ml, with ZnS:Cu/CaS, the CaZnS:Tb/ZnS quantum dot is to be dissolved at 2: 1 in the chloroformic solution of 1.5mg/ml by mass ratio, and two kinds of solution are mixed, and adopts the spin coating method film forming; Low speed 1100rpm, film formation time 20s, high speed 3000rpm, film formation time 30s was placed on drier interior 10 hours after finishing;
(3) preparation of Al negative electrode is adopted to divide on tungsten alloy stove silk and is hung the long Al silk of about 2cm, by the bar shaped mask plate, and vacuum evaporation skim bar shaped Al on luminescent layer, vacuum degree is greater than 8 * 10
-4Pa., evaporation current is about 30A, and evaporation time is about 12 minutes;
(4) with bar shaped ito anodes all in the above-mentioned device of making one termination dc power anode, all bar shaped Al negative electrode one termination dc power cathodes obtain the dot matrix green light quantum point electroluminescent device.
Embodiment 2:
(1) after the ito glass that will be etched into the 5mm*50mm bar shaped cleans in cleaning agent repeatedly, soaks and ultrasonic cleaning, dried for standby in IR bake at last through isopropyl alcohol, acetone and chloroformic solution respectively again;
(2) PVK is dissolved in the chloroformic solution of 1.7mg/ml,, with ZnS:Cu/CaS, the CaZnS:Tb/ZnS quantum dot is to be dissolved at 3: 1 in the chloroformic solution of 2mg/ml by mass ratio, adopts the spin coating method film forming; Low speed 1300rpm, film formation time 20s, high speed 3000rpm, film formation time 30s was placed on drier interior 8 hours after finishing;
(3) preparation of Al negative electrode is adopted to divide on tungsten alloy stove silk and is hung the long Al silk of about 2cm, by the bar shaped mask plate, and vacuum evaporation skim bar shaped Al on luminescent layer, vacuum degree is greater than 8 * 10
-4A., evaporation current is about 30A, and evaporation time is about 15 minutes;
(4) with bar shaped ito anodes all in the above-mentioned device of making one termination dc power anode, all bar shaped Al negative electrode one termination dc power cathodes obtain the dot matrix green light quantum point electroluminescent device.
Claims (4)
1, a kind of green light quantum point electroluminescent device is characterized in that this luminescent device is made up of following each layer successively from bottom to top:
1) ito anode conductive glass layer;
2) luminescent layer is dissolved in the ZnS:Cu/CaS of PVK, the CaZnS:Tb/ZnS green light quantum point;
3) Al cathode layer.
2, green light quantum point electroluminescent device according to claim 1, it is characterized in that ZnS:Cu/CaS in the luminescent layer, the mass ratio of CaZnS:Tb/ZnS green light quantum point is between 1: 1: 1～3: 1: 1, and PVK is a filmogen, and light emitting layer thickness y is 30≤y≤60nm.
3, green light quantum point electroluminescent device according to claim 1 is characterized in that Al cathode layer thickness z is 60≤z≤150nm.
4, the preparation method of the described green light quantum point electroluminescent device of a kind of claim 1 is characterized in that this method may further comprise the steps:
(1) after the ito glass that will be etched into the 5mm*60mm bar shaped cleans in cleaning agent repeatedly, soaks and ultrasonic cleaning, dried for standby in IR bake at last through isopropyl alcohol, acetone and chloroformic solution respectively again;
(2) PVK is dissolved in the chloroformic solution of 1～2mg/ml, with ZnS:Cu/CaS, the CaZnS:Tb/ZnS green light quantum point is 1: 1～3: 1 by mass ratio, is dissolved in the chloroformic solution of 1～2mg/ml, and two kinds of solution are mixed, and adopts the spin coating method film forming; Low speed 1000～1400rpm, film formation time 10～20s, high speed 3000～4000rpm, film formation time 10～30s was placed on drier interior 3～10 hours after finishing;
(3) preparation of Al negative electrode is adopted to divide on tungsten alloy stove silk and is hung the long AL silk of about 1～2cm, by the bar shaped mask plate, and vacuum evaporation skim bar shaped Al on luminescent layer, vacuum degree is greater than 8 * 10
-4Pa., evaporation current is 10～30A, and evaporation time is 10～20 minutes;
(4) with bar shaped ito anodes all in the above-mentioned device of making one termination dc power anode, all bar shaped Al negative electrode one termination dc power cathodes obtain the dot matrix green light quantum point electroluminescent device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101300615A CN1988191A (en) | 2006-12-12 | 2006-12-12 | Green light quantum point electroluminescence device and its prepairng method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101300615A CN1988191A (en) | 2006-12-12 | 2006-12-12 | Green light quantum point electroluminescence device and its prepairng method |
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| Publication Number | Publication Date |
|---|---|
| CN1988191A true CN1988191A (en) | 2007-06-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101300615A Pending CN1988191A (en) | 2006-12-12 | 2006-12-12 | Green light quantum point electroluminescence device and its prepairng method |
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| Country | Link |
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| CN (1) | CN1988191A (en) |
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2006
- 2006-12-12 CN CNA2006101300615A patent/CN1988191A/en active Pending
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