CN1988189A - Single layer white light quantum point electroluminescence device and its preparing method - Google Patents
Single layer white light quantum point electroluminescence device and its preparing method Download PDFInfo
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- CN1988189A CN1988189A CNA2006101300579A CN200610130057A CN1988189A CN 1988189 A CN1988189 A CN 1988189A CN A2006101300579 A CNA2006101300579 A CN A2006101300579A CN 200610130057 A CN200610130057 A CN 200610130057A CN 1988189 A CN1988189 A CN 1988189A
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- 239000002356 single layer Substances 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000005401 electroluminescence Methods 0.000 title claims description 18
- 239000010410 layer Substances 0.000 claims abstract description 22
- 239000002096 quantum dot Substances 0.000 claims abstract description 16
- 238000002360 preparation method Methods 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 229910001080 W alloy Inorganic materials 0.000 claims description 4
- 239000012459 cleaning agent Substances 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 238000007738 vacuum evaporation Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 8
- 239000003086 colorant Substances 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 6
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开了一种单层白光量子点电致发光器件及其制备方法，本发明以ZnS，ZnS∶Cu，ZnS∶Mn三色量子点为主体发光材料，以PVK为成膜材料，在导电玻璃ITO表面利用旋转涂覆，将原料制成一定厚度的薄膜，得到具有如下结构的器件：ITO/PVK∶ZnS，ZnS∶Cu，ZnS∶Mn(y nm)/Al(z nm)。该白光器件采用单层的简单结构，无需分别制备三种基色的发光层，并对它们分别进行繁琐的光刻过程等，具有制备工艺简单、重复性好的特点；该器件适于作为LCD显示器件的背光源，并且将其与较为成熟的微电子刻蚀彩色滤色膜技术相结合，则有望能够得到全色显示。The invention discloses a single-layer white light quantum dot electroluminescent device and a preparation method thereof. The invention uses ZnS, ZnS: Cu, ZnS: Mn three-color quantum dots as the main luminescent material, and PVK as the film-forming material. The surface of glass ITO is spin-coated, and the raw material is made into a thin film with a certain thickness to obtain a device with the following structure: ITO/PVK: ZnS, ZnS: Cu, ZnS: Mn(y nm)/Al(z nm). The white light device adopts a single-layer simple structure, and does not need to separately prepare the light-emitting layers of the three primary colors, and carry out cumbersome photolithography processes on them respectively, and has the characteristics of simple preparation process and good repeatability; the device is suitable as an LCD display The backlight source of the device, and combining it with the relatively mature technology of microelectronic etching color filter film, is expected to be able to obtain full-color display.
Description
[technical field]
The present invention relates to a kind of novel flat-plate escope spare---single layer white light quantum point electroluminescence device and preparation method thereof.
[background technology]
Quantum dot is accurate zero-dimension nano semi-conducting material, and it is made of a small amount of atom or atomic group, and three dimension scale is at 1～10nm usually.Because the influence of size quantum effect and dielectric confinement effect demonstrates unique physics and chemical characteristics such as fluorescent characteristic, makes quantum dot have broad application prospects at aspects such as optoelectronics and biology.Advantages such as quanta point electroluminescent device has low-power consumption, high efficiency, response speed is fast and in light weight can the large tracts of land film forming, is a kind of photonic device with huge learning value and good commercial promise.More options ZnS coats the luminescent layer of CdSe quantum dot as electroluminescent device in the world aspect material, but the toxicity of cadmium (Cd) is bigger, can enter human body through food, water or air, and human body is produced serious toxic action.Given this, European Union forbade using cadmium materials such as (Cadmium) by hazardous substance illegal instruction (RoHS) in the electronic motor equipment in electronic product from July 1st, 2006.So developing novel environment friendly quantum electric material is the direction of quanta point electroluminescent device development.
Simultaneously, mostly the method for traditional in the world acquisition white light is to realize by sandwich construction, promptly adopt the method that three kinds of luminescent layers of red, green, blue are piled up, obtain white light by mixing three primary colors, the weak point of this kind method shows as complicated process of preparation, difficult the grasp, cost is higher, and the white light colourity of device easily changes along with the variation that adds driving voltage, and in addition because sandwich construction easily causes self-absorption, general quantum efficiency is all lower.
[summary of the invention]
The objective of the invention is in order to overcome the deficiencies in the prior art, and a kind of preparation method and device of single layer white light quantum point electroluminescence device are provided.The present invention is the luminescent layer material with the three primary colors quantum dot that does not contain cadmium toxic components such as (Cd) and have a good thermal stability, and utilizes the good film forming of polymer, realizes simple layer, plate single layer white light quantum point electroluminescence device simple in structure.
Single layer white light quantum point electroluminescence device provided by the invention is characterized in that this luminescent device is made up of following each layer successively from bottom to top: the ito anode conductive glass layer; Luminescent layer is the ZnS that is dissolved in PVK, ZnS:Cu, ZnS:Mn three look quantum dots; Metal A l negative electrode.
The present invention is with ZnS, ZnS:Cu, and ZnS:Mn three look quantum dots are the main body luminescent material, and utilize
The preparation method of a kind of above-mentioned single layer white light quantum point electroluminescence device provided by the invention comprises:
(1) after the ito glass that will be etched into the 5mm*60mm bar shaped cleans in cleaning agent repeatedly, soaks and ultrasonic cleaning, dried for standby in IR bake at last through isopropyl alcohol, acetone and chloroformic solution respectively again;
(2) PVK is dissolved in the chloroformic solution of 1～2mg/ml, with ZnS, ZnS:Cu, the ZnS:Mn quantum dot is 1: 1: 1～3: 1: 1 by mass ratio, is dissolved in the chloroformic solution of 1～2mg/ml, and two kinds of solution are mixed, and adopts the spin coating method film forming; Low speed 1000～1400rpm, film formation time 10～20s, high speed 3000～4000rpm, film formation time 10～30s was placed on drier interior 3～10 hours after finishing;
(3) preparation of Al negative electrode is adopted to divide on tungsten alloy stove silk and is hung the long AL silk of about 1～2cm, by the bar shaped mask plate, and vacuum evaporation skim bar shaped Al on luminescent layer, vacuum degree is greater than 8 * 10
-4Pa., evaporation current is 10～30A, and evaporation time is 10～20 minutes;
(4) with bar shaped ito anodes all in the above-mentioned device of making one termination dc power anode, all bar shaped Al negative electrode one termination dc power cathodes obtain the dot matrix single layer white light quantum point electroluminescence device.
Advantage of the present invention and good effect: the invention provides a kind of single layer white light quantum point electroluminescence device, this white light parts adopts the simple structure of individual layer, need not to prepare respectively the luminescent layer of three kinds of primary colours, and they are carried out loaded down with trivial details photoetching process etc. respectively, have that preparation technology is simple, the characteristics of good reproducibility; This single layer white light quantum point electroluminescence device is very suitable for the backlight as this class display spare, and it also has littler power consumption than general monochromatic light backlight simultaneously, has higher contrast and brightness.And it is combined with comparatively ripe microelectronics etching color filter membrane technology, then be expected to access panchromatic demonstration.
[description of drawings]
Fig. 1 is a single layer white light quantum point electroluminescence device concrete structure schematic diagram;
[embodiment]
The present invention is with ZnS, ZnS:Cu, ZnS:Mn three look quantum dots are the main body luminescent material, and utilize the good film forming of polymer P VK (polyvinylcarbazole), as filmogen, utilize rotation to apply polymer P VK on electro-conductive glass ITO surface, to make certain thickness film, obtain having the device of following structure: ITO/PVK:ZnS, ZnS:Cu, ZnS:Mn (y nm)/Al (z nm); Wherein, 30≤y≤60nm; 60≤z≤150nm, ZnS in the luminescent layer, ZnS:Cu, the mass ratio of ZnS:Mn quantum dot is between 1: 1: 1～3: 1: 1.The respective material molecular formula is as follows:
Embodiment 1:
(1) after the ito glass that will be etched into the 5mm*60mm bar shaped cleans in cleaning agent repeatedly, soaks and ultrasonic cleaning, dried for standby in IR bake at last through isopropyl alcohol, acetone and chloroformic solution respectively again;
(2) PVK is dissolved in the chloroformic solution of 1.2mg/ml, with ZnS, ZnS:Cu, ZnS:Mn quantum dot are to be dissolved at 2: 1: 1 in the chloroformic solution of 1.5mg/ml by mass ratio, and two kinds of solution are mixed, and adopt the spin coating method film forming; Low speed 1100rpm, film formation time 20s, high speed 3000rpm, film formation time 30s was placed on drier interior 10 hours after finishing;
(3) preparation of Al negative electrode is adopted to divide on tungsten alloy stove silk and is hung the long Al silk of about 2cm, by the bar shaped mask plate, and vacuum evaporation skim bar shaped Al on luminescent layer, vacuum degree is greater than 8 * 10
-4Pa., evaporation current is about 30A, and evaporation time is about 12 minutes;
(4) with bar shaped ito anodes all in the above-mentioned device of making one termination dc power anode, all bar shaped Al negative electrode one termination dc power cathodes obtain the dot matrix single layer white light quantum point electroluminescence device.
Embodiment 2:
(1) after the ito glass that will be etched into the 5mm*50mm bar shaped cleans in cleaning agent repeatedly, soaks and ultrasonic cleaning, dried for standby in IR bake at last through isopropyl alcohol, acetone and chloroformic solution respectively again;
(2) PVK is dissolved in the chloroformic solution of 1.7mg/ml,, with ZnS, ZnS:Cu, ZnS:Mn quantum dot are to be dissolved at 3: 1: 1 in the chloroformic solution of 2mg/ml by mass ratio, adopt the spin coating method film forming; Low speed 1300rpm, film formation time 20s, high speed 3000rpm, film formation time 30s was placed on drier interior 8 hours after finishing;
(3) preparation of Al negative electrode is adopted to divide on tungsten alloy stove silk and is hung the long Al silk of about 2cm, by the bar shaped mask plate, and vacuum evaporation skim bar shaped Al on luminescent layer, vacuum degree is greater than 8 * 10
-4Pa., evaporation current is about 30A, and evaporation time is about 15 minutes;
(4) with bar shaped ito anodes all in the above-mentioned device of making one termination dc power anode, all bar shaped Al negative electrode one termination dc power cathodes obtain the dot matrix single layer white light quantum point electroluminescence device.
Claims (4)
1, a kind of single layer white light quantum point electroluminescence device is characterized in that this luminescent device is made up of following each layer successively from bottom to top:
1) ito anode conductive glass layer;
2) luminescent layer is dissolved in the ZnS of PVK, ZnS:Cu, ZnS:Mn three look quantum dots;
3) Al cathode layer.
2, single layer white light quantum point electroluminescence device according to claim 1, it is characterized in that ZnS in the luminescent layer, ZnS:Cu, the mass ratio of ZnS:Mn three look quantum dots is between 1: 1: 1～3: 1: 1, PVK is a filmogen, and light emitting layer thickness y is 30≤y≤60nm.
3, single layer white light quantum point electroluminescence device according to claim 1 is characterized in that Al cathode layer thickness z is 60≤z≤150nm.
4, the preparation method of the described single layer white light quantum point electroluminescence device of a kind of claim 1 is characterized in that this method may further comprise the steps:
(1) after the ito glass that will be etched into the 5mm*60mm bar shaped cleans in cleaning agent repeatedly, soaks and ultrasonic cleaning, dried for standby in IR bake at last through isopropyl alcohol, acetone and chloroformic solution respectively again;
(2) PVK is dissolved in the chloroformic solution of 1～2mg/ml, with ZnS, ZnS:Cu, the ZnS:Mn quantum dot is 1: 1: 1～3: 1: 1 by mass ratio, is dissolved in the chloroformic solution of 1～2mg/ml, and two kinds of solution are mixed, and adopts the spin coating method film forming; Low speed 1000～1400rpm, film formation time 10～20s, high speed 3000～4000rpm, film formation time 10～30s was placed on drier interior 3～10 hours after finishing;
(3) preparation of Al negative electrode is adopted to divide on tungsten alloy stove silk and is hung the long AL silk of about 1～2cm, by the bar shaped mask plate, and vacuum evaporation skim bar shaped Al on luminescent layer, vacuum degree is greater than 8 * 10
-4Pa., evaporation current is 10～30A, and evaporation time is 10～20 minutes;
(4) with bar shaped ito anodes all in the above-mentioned device of making one termination dc power anode, all bar shaped Al negative electrode one termination dc power cathodes obtain the dot matrix single layer white light quantum point electroluminescence device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101300579A CN1988189A (en) | 2006-12-12 | 2006-12-12 | Single layer white light quantum point electroluminescence device and its preparing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101300579A CN1988189A (en) | 2006-12-12 | 2006-12-12 | Single layer white light quantum point electroluminescence device and its preparing method |
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| Publication Number | Publication Date |
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| CN1988189A true CN1988189A (en) | 2007-06-27 |
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| CNA2006101300579A Pending CN1988189A (en) | 2006-12-12 | 2006-12-12 | Single layer white light quantum point electroluminescence device and its preparing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102916097A (en) * | 2011-08-01 | 2013-02-06 | 潘才法 | Electroluminescent device |
| WO2017166489A1 (en) * | 2016-03-30 | 2017-10-05 | 乐视控股（北京）有限公司 | Self-luminous light guide plate, and backlight module and display device |
-
2006
- 2006-12-12 CN CNA2006101300579A patent/CN1988189A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102916097A (en) * | 2011-08-01 | 2013-02-06 | 潘才法 | Electroluminescent device |
| CN102916097B (en) * | 2011-08-01 | 2017-08-18 | 潘才法 | A kind of electroluminescent device |
| WO2017166489A1 (en) * | 2016-03-30 | 2017-10-05 | 乐视控股（北京）有限公司 | Self-luminous light guide plate, and backlight module and display device |
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