CN1976073A - Flexible single-layer blue light quantum point electroluminescent device and producing method thereof - Google Patents
Flexible single-layer blue light quantum point electroluminescent device and producing method thereof Download PDFInfo
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- CN1976073A CN1976073A CNA2006101300704A CN200610130070A CN1976073A CN 1976073 A CN1976073 A CN 1976073A CN A2006101300704 A CNA2006101300704 A CN A2006101300704A CN 200610130070 A CN200610130070 A CN 200610130070A CN 1976073 A CN1976073 A CN 1976073A
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Abstract
本发明公开一种柔性单层蓝光量子点电致发光器件及其制备方法，本发明以CaZnS/ZnS，ZnS/CaS蓝光三色量子点为主体发光材料，以PMMA为成膜材料，在PET衬底的ITO表面分别旋转涂覆，将原料制成一定厚度的薄膜，得到具有如下结构的器件：ITO/PMMA：CaZnS/ZnS，ZnS/CaS(y nm)/Al(z nm)。该蓝光器件采用单层的简单结构，制备工艺简单、柔性可弯曲、重复性好的特点；该柔性蓝光量子点电致发光器基本实现了柔性显示且抗振动和耐冲击性较强。The invention discloses a flexible single-layer blue-light quantum dot electroluminescent device and a preparation method thereof. The invention uses CaZnS/ZnS, ZnS/CaS blue-light three-color quantum dots as the main luminescent material, PMMA as the film-forming material, and a PET lining. The ITO surface of the bottom is spin-coated separately, and the raw material is made into a thin film with a certain thickness to obtain a device with the following structure: ITO/PMMA: CaZnS/ZnS, ZnS/CaS(y nm)/Al(z nm). The blue light device adopts a single-layer simple structure, and has the characteristics of simple preparation process, flexibility and bendability, and good repeatability; the flexible blue light quantum dot electroluminescent device basically realizes flexible display and has strong vibration resistance and shock resistance.
Description
[technical field]
Patent of the present invention relates to a kind of novel flat-plate escope spare---flexible single-layer blue light quantum point electroluminescent device and preparation method thereof.
[background technology]
The flexible el display device is that pliable and tough flexible and material with good light permeability is replaced the glass substrate of commonplace components as substrate, compares with the common electrical electroluminescence device, has light, thin, anti-vibration and characteristics such as shock-resistant.Therefore, the flexible el display device has important application prospects as a kind of novel solid plateization and flexibility display device in portable display device, military field.
Quantum dot is accurate zero-dimension nano semi-conducting material, and it is made of a small amount of atom or atomic group, and three dimension scale is at 1～10nm usually.Because the influence of size quantum effect and dielectric confinement effect demonstrates unique physics and chemical characteristics such as fluorescent characteristic, makes quantum dot have broad application prospects at aspects such as optoelectronics and biology.Advantages such as quanta point electroluminescent device has low-power consumption, high efficiency, response speed is fast and in light weight can the large tracts of land film forming, is a kind of photonic device with huge learning value and good commercial promise.More options ZnS coats the luminescent layer of CdSe quantum dot as electroluminescent device in the world aspect material, but the toxicity of cadmium (Cd) is bigger, can enter human body through food, water or air, and human body is produced serious toxic action.Given this, European Union forbade using cadmium materials such as (Cadmium) by hazardous substance illegal instruction (RoHS) in the electronic motor equipment in electronic product from July 1st, 2006.So developing novel environment friendly quantum electric material is the direction of quanta point electroluminescent device development.
[summary of the invention]
The objective of the invention is provides a kind of preparation method and device of flexible single-layer blue light quantum point electroluminescent device in order to overcome the deficiencies in the prior art.The present invention is the luminescent layer material with the blue light quantum point that does not contain cadmium toxic components such as (Cd) and have a good thermal stability, and utilize the good film forming of polymer, realize simple layer, simple in structure, luminous uniform plate flexible single-layer blue light quantum point electroluminescent device.
Flexible single-layer blue light quantum point electroluminescent device provided by the invention is characterized in that this luminescent device is made up of following each layer successively from bottom to top:
The ito anode of PET (polyethylene terephthalate) substrate; Luminescent layer is dissolved in the CaZnS/ZnS of PMMA (polymethyl methacrylate), ZnS/CaS blue light core/shell structure quantum dot; Metal A l negative electrode.
The present invention also provides a kind of preparation method of above-mentioned flexible single-layer blue light quantum point electroluminescent device, comprising:
(1) after the ito anode that will be etched into 5mm*60mm bar shaped PET substrate cleans in cleaning agent repeatedly, soaks and ultrasonic cleaning, dried for standby in IR bake at last through isopropyl alcohol, acetone and chloroformic solution respectively again;
(2) PMMA is dissolved in the chloroformic solution of 1～2mg/ml, with CaZnS/ZnS, the ZnS/CaS blue light quantum point is 1: 1～3: 1 by mass ratio, is dissolved in the chloroformic solution of 1～2mg/ml, adopts the spin coating method film forming; Low speed 1000～1400rpm, film formation time 10～20s, high speed 3000～4000rpm, film formation time 10～30s was placed on drier interior 3～10 hours after finishing;
(3) preparation of Al negative electrode is adopted to divide on tungsten alloy stove silk and is hung the long Al silk of about 1～2cm, by the bar shaped mask plate, and vacuum evaporation skim bar shaped Al on luminescent layer, vacuum degree is greater than 8 * 10
-4Pa., evaporation current is 10～30A, and evaporation time is 10～20 minutes;
(4) use polytrifluorochloroethylene that device is encapsulated, cut out the polytrifluorochloroethylene film, then it is covered the one side that is coated with functional layer that has prepared, expose ito anode and Al negative electrode, with epoxide-resin glue sealing all around, move in the desiccator and left standstill 10～30 minutes, make the epoxy resin adhesive curing;
(5) with bar shaped ito anodes all in the above-mentioned device of making one termination dc power anode, all bar shaped Al negative electrode one termination dc power cathodes obtain the dot matrix flexible single-layer blue light quantum point electroluminescent device.
Advantage of the present invention and good effect: the invention provides a kind of flexible single-layer blue light quantum point electroluminescent device, this blue-light device adopts the simple structure of individual layer, has that preparation technology is simple, the characteristics of good reproducibility; This flexible single-layer blue light quantum point electroluminescent device is suitable for as monochromatic source, has littler power consumption than general monochromatic source, has higher brightness.In addition, this flexibility blue light quantum point electroluminescence device has realized that substantially flexible demonstration and anti-vibration and resistance to impact are stronger, and device has been carried out simple package, and has compared the packaging working life and improved 9 times, and this illustrates that these encapsulation means are effective.
[description of drawings]
Fig. 1 is a flexible single-layer blue light quantum point electroluminescent device concrete structure schematic diagram;
[embodiment]
The present invention is with CaZnS/ZnS, the ZnS/CaS blue light quantum point is the main body luminescent material, and utilize the good film forming of polymer P MMA, with polymer P MMA as filmogen, ITO surface at pet layer utilizes rotation to apply, raw material is made certain thickness film, obtain having the device of following structure: ITO/PMMA:CaZnS/ZnS, ZnS/CaS (y nm)/Al (z nm); Wherein, 30≤y≤60nm; 60≤z≤150nm, CaZnS/ZnS in the luminescent layer, the mass ratio of ZnS/CaS blue light quantum point is between 1: 1～3: 1.
Embodiment 1:
(1) after the ito anode that will be etched into 5mm*60mm bar shaped PET substrate cleans in cleaning agent repeatedly, soaks and ultrasonic cleaning, dried for standby in IR bake at last through isopropyl alcohol, acetone and chloroformic solution respectively again;
(2) PMMA is dissolved in the chloroformic solution of 1mg/ml, with CaZnS/ZnS, the ZnS/CaS blue light quantum point is 2: 1 by mass ratio, is dissolved in the chloroformic solution of 1.5mg/ml, adopts the spin coating method film forming; Low speed 1100rpm, film formation time 20s, high speed 3000rpm, film formation time 30s was placed on drier interior 10 hours after finishing;
(3) preparation of Al negative electrode is adopted to divide on tungsten alloy stove silk and is hung the long Al silk of about 2cm, by the bar shaped mask plate, and vacuum evaporation skim bar shaped Al on luminescent layer, vacuum degree is greater than 8 * 10
-4Pa., evaporation current is about 30A, and evaporation time is about 12 minutes;
(4) use polytrifluorochloroethylene that device is encapsulated, cut out the polytrifluorochloroethylene film, then it is covered the one side that is coated with functional layer that has prepared, expose ito anode and Al negative electrode, with epoxide-resin glue sealing all around, move in the desiccator and left standstill 30 minutes, make the epoxy resin adhesive curing;
(5) with bar shaped ito anodes all in the above-mentioned device of making one termination dc power anode, all bar shaped Al negative electrode one termination dc power cathodes obtain the dot matrix blue light quantum point electroluminescence device.
Embodiment 2:
(1) after the ito anode that will be etched into 5mm*50mm bar shaped PET substrate cleans in cleaning agent repeatedly, soaks and ultrasonic cleaning, dried for standby in IR bake at last through isopropyl alcohol, acetone and chloroformic solution respectively again;
(2) PMMA is dissolved in the chloroformic solution of 2mg/ml, with CaZnS/ZnS, the ZnS/CaS blue light quantum point is 3: 1 by mass ratio, is dissolved in the chloroformic solution of 1.5mg/ml, adopts the spin coating method film forming; Low speed 1300rpm, film formation time 20s, high speed 3000rpm, film formation time 30s was placed on drier interior 8 hours after finishing;
(3) preparation of Al negative electrode is adopted to divide on tungsten alloy stove silk and is hung the long Al silk of about 2cm, by the bar shaped mask plate, and vacuum evaporation skim bar shaped Al on luminescent layer, vacuum degree is greater than 8 * 10
-4Pa., evaporation current is about 30A, and evaporation time is about 15 minutes;
(4) use polytrifluorochloroethylene that device is encapsulated, cut out the polytrifluorochloroethylene film, then it is covered the one side that is coated with functional layer that has prepared, expose ito anode and Al negative electrode, with epoxide-resin glue sealing all around, move in the desiccator and left standstill 25 minutes, make the epoxy resin adhesive curing;
(5) with bar shaped ito anodes all in the above-mentioned device of making one termination dc power anode, all bar shaped Al negative electrode one termination dc power cathodes obtain the dot matrix blue light quantum point electroluminescence device.
Claims (4)
1, a kind of flexible single-layer blue light quantum point electroluminescent device is characterized in that this luminescent device is made up of following each layer successively from bottom to top:
1) ito anode of PET substrate;
2) luminescent layer is dissolved in the CaZnS/ZnS of PMMA, ZnS/CaS blue light core/shell structure quantum dot;
3) Al cathode layer.
2, flexible single-layer blue light quantum point electroluminescent device according to claim 1, it is characterized in that CaZnS/ZnS in the luminescent layer, the mass ratio of ZnS/CaS blue light quantum point is between 1: 1～3: 1, and PMMA is a filmogen, and light emitting layer thickness y is 30≤y≤60nm.
3, flexible single-layer blue light quantum point electroluminescent device according to claim 1 is characterized in that Al cathode layer thickness z is 60≤z≤150nm.
4, the preparation method of the described flexible single-layer blue light quantum point electroluminescent device of a kind of claim 1 is characterized in that this method may further comprise the steps:
(1) after the ito anode that will be etched into 5mm*60mm bar shaped PET substrate cleans in cleaning agent repeatedly, soaks and ultrasonic cleaning, dried for standby in IR bake at last through isopropyl alcohol, acetone and chloroformic solution respectively again;
(2) PMMA is dissolved in the chloroformic solution of 1～2mg/ml, with CaZnS/ZnS, the ZnS/CaS blue light quantum point is 1: 1～3: 1 by mass ratio, is dissolved in the chloroformic solution of 1～2mg/ml, adopts the spin coating method film forming; Low speed 1000～1400rpm, film formation time 10～20s, high speed 3000～4000rpm, film formation time 10～30s was placed on drier interior 3～10 hours after finishing;
(3) preparation of Al negative electrode is adopted to divide on tungsten alloy stove silk and is hung the long Al silk of about 1～2cm, by the bar shaped mask plate, and vacuum evaporation skim bar shaped Al on luminescent layer, vacuum degree is greater than 8 * 10
-4Pa., evaporation current is 10～30A, and evaporation time is 10～20 minutes;
(4) use polytrifluorochloroethylene that device is encapsulated, cut out the polytrifluorochloroethylene film, then it is covered the one side that is coated with functional layer that has prepared, expose ito anode and Al negative electrode, with epoxide-resin glue sealing all around, move in the desiccator and left standstill 10～30 minutes, make the epoxy resin adhesive curing;
(5) with bar shaped ito anodes all in the above-mentioned device of making one termination dc power anode, all bar shaped Al negative electrode one termination dc power cathodes obtain the dot matrix flexible single-layer blue light quantum point electroluminescent device.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102280595A (en) * | 2011-06-29 | 2011-12-14 | 浙江大学 | Colloid quantum dot optical microcavity structure and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102280595A (en) * | 2011-06-29 | 2011-12-14 | 浙江大学 | Colloid quantum dot optical microcavity structure and manufacturing method thereof |
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