CN1813490B - Package structure of silicon capacitor microphone and fabrication method thereof - Google Patents
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Abstract
Description
技术领域 technical field
本发明涉及一种传声器,且尤其涉及硅电容传声器的封装结构(packaging structure)及其制造方法。The present invention relates to a microphone, and in particular to a packaging structure of a silicon condenser microphone and a manufacturing method thereof.
背景技术 Background technique
通常,传声器是指用于将声能转换成电能的转换器。作为其中一种传声器的电容传声器是这样的传声器,其采用其中两个电极板彼此相对的电容器的原理。当其中一个电极板用作振动板时,该振动板根据声音而振动以改变电容器的电容,从而使累积的电荷发生变化。因此,电流根据声音的变化而流动。In general, a microphone refers to a converter used to convert sound energy into electrical energy. A condenser microphone as one of the microphones is a microphone employing the principle of a capacitor in which two electrode plates are opposed to each other. When one of the electrode plates is used as a vibrating plate, the vibrating plate vibrates according to the sound to change the capacitance of the capacitor, thereby changing the accumulated charge. Therefore, electric current flows according to the change of sound.
在电容传声器中,驻极体电容传声器是最为熟知的,且该驻极体电容传声器的特征在于:使用作为包括半永久(semi-permanent)电荷的材料的驻极体,来代替偏压以形成静电场。通过将高分子薄膜热结合或结合到导电背板上而形成该驻极体。Among condenser microphones, an electret condenser microphone is the most well-known, and the electret condenser microphone is characterized in that an electret, which is a material including semi-permanent charges, is used instead of a bias to form an electrostatic charge. field. The electret is formed by thermally bonding or bonding a polymer film to a conductive backplane.
但是,高分子薄膜在其中部件的尺寸小于一个纳米的最新动态中受到限制。此外,由于使用高分子薄膜的驻极体对温度或湿度敏感,因此特性可能降低,从而使得传声器本身的性能劣化。另外,使用高分子薄膜的振动板太厚,使得振动特性不足且灵敏度差。However, polymer films are limited in recent developments in which features are smaller than one nanometer in size. In addition, since the electret using the polymer film is sensitive to temperature or humidity, the characteristics may decrease, thereby deteriorating the performance of the microphone itself. In addition, a vibration plate using a polymer film is too thick, resulting in insufficient vibration characteristics and poor sensitivity.
因此,为了改善这些特性,对具有改进的温度和振动特性的硅传声器进行论述,该传声器允许在半导体制造加工中实现成批处理。美国专利申请No.US2002/0102004公开了一种名为“小型的硅电容传声器及其制造方法(Miniature Silicon Condenser Microphone And Method ForProducing Same)”的传声器封装。Therefore, in order to improve these characteristics, a silicon microphone with improved temperature and vibration characteristics that allows batch processing in semiconductor manufacturing processes is discussed. US Patent Application No. US2002/0102004 discloses a microphone package named "Miniature Silicon Condenser Microphone And Method For Producing Same" (Miniature Silicon Condenser Microphone And Method For Producing Same).
图1是表示在美国专利申请No.US2002/0102004中公开的硅电容传声器的封装结构的剖视图。FIG. 1 is a cross-sectional view showing a package structure of a silicon condenser microphone disclosed in US Patent Application No. US2002/0102004.
参照图1,硅电容传声器12和电路单元16布置在具有凹入区域18的基底14上。硅电容传声器12布置在凹入区域18上。布置有壳体20以保持稳定性。在壳体20中形成有开口24,然后用密封剂26覆盖该开口。声压通过在开口24和密封剂26之间的间隙向内传送到硅电容传声器12。Referring to FIG. 1 , a
通常,为了提高传声器的灵敏度,需要提供其中振动板对声音响应灵敏的环境。为此,作为在背板与基底之间的空间的后腔室的大小应足以使后腔室的压力可以被忽略,即使在振动板振动时也是如此。In general, in order to increase the sensitivity of a microphone, it is necessary to provide an environment in which the vibration plate responds sensitively to sound. For this reason, the size of the back chamber, which is the space between the back plate and the base, should be sufficient so that the pressure in the back chamber can be ignored even when the vibrating plate vibrates.
根据上述现有技术,通过形成凹入区域18而获得后腔室,以提高传声器的灵敏度。但是,由于通常用作为环氧树脂的FR-4(阻燃合成物4)来制造基底14,因此在随后的高温热处理(例如,回流处理)过程中,由于环氧树脂较差的耐热特性可能因为热而出现变形。According to the prior art described above, the rear chamber is obtained by forming a
另外,由于由环氧树脂构成的基底14与布置在基底上的硅电容传声器12和电路单元16之间的热膨胀系数差较大,因此在高温热处理过程中,结合特性下降,从而产生结合缺陷。In addition, since the thermal expansion coefficient difference between the
此外,由于通过对具有特定形状的基底进行蚀刻而形成凹入区域18,因此后腔室的尺寸增加受到凹入区域的尺寸增加的限制。In addition, since the
发明内容 Contents of the invention
本发明的一个目的是提供硅电容传声器的封装结构及其制造方法,其中布置有硅电容传声器和电路单元的基底由耐热陶瓷材料构成,该陶瓷材料具有与硅电容传声器和电路单元的热膨胀系数相近的热膨胀系数,以防止在高温热处理过程中由于热而导致变形和结合特性的下降。An object of the present invention is to provide the package structure of silicon condenser microphone and its manufacture method, wherein the substrate that is arranged with silicon condenser microphone and circuit unit is made of heat-resistant ceramic material, and this ceramic material has the thermal expansion coefficient with silicon condenser microphone and circuit unit Similar thermal expansion coefficients to prevent deformation and decrease in bonding properties due to heat during high temperature heat treatment.
根据本发明的实施例,本发明的另一目的是提供硅电容传声器的封装结构及其制造方法,其中通过结合多个室板(chamber plate)而形成基底,从而可以以多种方式改变形状并可以形成用于后腔室的空间。According to an embodiment of the present invention, another object of the present invention is to provide a package structure of a silicon condenser microphone and a manufacturing method thereof, wherein the base is formed by combining a plurality of chamber plates so that the shape can be changed in various ways and A space for a back chamber may be formed.
根据本发明的实施例,本发明的另一目的是提供硅电容传声器的封装结构及其制造方法,其中在后腔室中形成支柱,以防止室板由于后腔室而塌陷。According to an embodiment of the present invention, another object of the present invention is to provide a package structure of a silicon condenser microphone and a manufacturing method thereof, wherein a pillar is formed in the rear chamber to prevent the chamber plate from collapsing due to the rear chamber.
根据本发明的实施例,本发明的另一目的是提供硅电容传声器的封装结构及其制造方法,其中在基底的表面(或上部分)上包括一凸起,以防止用于粘结硅电容传声器和电路单元的粘结剂或固定环氧树脂散布到不希望的区域。According to an embodiment of the present invention, another object of the present invention is to provide a packaging structure of a silicon capacitor microphone and a manufacturing method thereof, wherein a protrusion is included on the surface (or upper part) of the substrate to prevent the silicon capacitor from being used for bonding. Adhesive or mounting epoxy for the microphone and circuit unit spread into undesired areas.
为了实现本发明的上述目的,根据本发明的实施例,提供了一种硅电容传声器的封装结构,该封装结构包括:基底,其具有一上表面,在该上表面上布置有硅电容传声器和电路单元,该基底在其中具有后腔室,该后腔室形成在所述硅电容传声器和所述电路单元的下方,该基底包括气孔,用于供空气通过用于布置硅电容传声器的上表面和后腔室之间;和壳体,其覆盖布置在基底的上表面上的硅电容传声器和电路单元,用于对它们进行保护。In order to achieve the above object of the present invention, according to an embodiment of the present invention, a packaging structure of a silicon condenser microphone is provided, the packaging structure includes: a substrate, which has an upper surface, and a silicon condenser microphone and a silicon condenser microphone are arranged on the upper surface a circuit unit, the substrate having therein a rear chamber formed under the silicon condenser microphone and the circuit unit, the substrate including air holes for passing air through an upper surface for arranging the silicon condenser microphone and between the rear chamber; and a case covering the silicon condenser microphone and the circuit unit arranged on the upper surface of the base for protecting them.
优选的是,所述上表面的除了被所述硅电容传声器和电路单元覆盖的部分之外的部分的高度比所述上表面的被所述硅电容传声器和电路单元覆盖的部分的高度要高,且其中在所述上表面的除了被硅电容传声器和电路单元覆盖的部分之外的部分下方的空间用作后腔室的一部分。Preferably, the height of the portion of the upper surface other than the portion covered by the silicon condenser microphone and the circuit unit is higher than the height of the portion of the upper surface covered by the silicon condenser microphone and the circuit unit , and wherein the space below the portion of the upper surface other than the portion covered by the silicon condenser microphone and the circuit unit is used as a part of the rear chamber.
为了实现本发明的上述目的,根据本发明的实施例,提供了一种用于制造硅电容传声器的封装结构的方法,该方法包括如下步骤:(a)形成一基底,在该基底中具有后腔室,该后腔室形成在所述硅电容传声器和电路单元的下方,其中该基底包括气孔,用于供空气通过基底的上表面与后腔室之间,该气孔布置在所述上表面的待布置硅电容传声器和电路单元的部分处;(b)将所述硅电容传声器和电路单元结合到所述基底的上表面上;以及(c)用一壳体覆盖所述硅电容传声器和电路单元,以保护该硅电容传声器和电路单元。In order to achieve the above object of the present invention, according to an embodiment of the present invention, a method for manufacturing a packaging structure of a silicon condenser microphone is provided, the method includes the following steps: (a) forming a substrate, in which there is a rear a chamber, the rear chamber is formed under the silicon condenser microphone and the circuit unit, wherein the substrate includes an air hole for passing air between the upper surface of the substrate and the rear chamber, the air hole is arranged on the upper surface (b) combining the silicon condenser microphone and the circuit unit on the upper surface of the substrate; and (c) covering the silicon condenser microphone and the circuit unit with a housing The circuit unit is used to protect the silicon condenser microphone and the circuit unit.
如上所述,根据所述硅电容传声器及其制造方法,布置有硅电容传声器和电路单元的基底由耐热陶瓷材料构成,该陶瓷材料具有与硅电容传声器和电路单元的热膨胀系数相近的热膨胀系数,以防止在高温热处理过程中由于热而导致变形和结合特性的下降。具体地,由于陶瓷材料具有高耐热特性,因此可以减少由于处理温度增加而造成的产品损坏。As described above, according to the silicon condenser microphone and its manufacturing method, the substrate on which the silicon condenser microphone and the circuit unit are arranged is made of a heat-resistant ceramic material having a thermal expansion coefficient close to that of the silicon condenser microphone and the circuit unit , to prevent deformation and decrease in bonding properties due to heat during high-temperature heat treatment. Specifically, since the ceramic material has high heat-resistant characteristics, product damage due to an increase in processing temperature can be reduced.
另外,通过结合多个室板来形成所述基底,从而可以以多种方式改变形状并可以形成用于后腔室的空间。具体地,当所述基底的由硅电容传声器和电路单元露出的部分的高度沿着其边缘部分增加且内部空间用作后腔室时,后腔室的大小可以最大化以提高传声器的灵敏度。此外,当基底的高度增加到壳体的高度时,所述壳体可以被制造成具有平坦结构,从而降低制造成本。In addition, the base is formed by combining a plurality of chamber plates, so that the shape can be changed in various ways and a space for the rear chamber can be formed. Specifically, when the height of the portion of the substrate exposed by the silicon condenser microphone and the circuit unit is increased along its edge portion and the inner space is used as the rear chamber, the size of the rear chamber can be maximized to improve the sensitivity of the microphone. In addition, when the height of the base is increased to that of the case, the case can be manufactured to have a flat structure, thereby reducing manufacturing costs.
根据本发明的硅电容传声器的封装结构及其制造方法,在后腔室中形成支柱以防止室板由于后腔室而塌陷。因此,用于后腔室的空间被扩大,同时保持了稳定性。According to the packaging structure of the silicon condenser microphone and the manufacturing method thereof of the present invention, a pillar is formed in the rear chamber to prevent the chamber plate from collapsing due to the rear chamber. Therefore, the space for the rear chamber is enlarged while maintaining stability.
根据本发明的硅电容传声器的封装结构及其制造方法,在基底的表面(或上部分)上包括一凸起,以防止用于粘结硅电容传声器和电路单元的粘结剂或固定环氧树脂散布到不希望的区域。因此,可以防止由于粘结剂或环氧树脂散布到壳体与基底的接触部分而在壳体与基底的接触表面之间造成接触缺陷。According to the packaging structure of the silicon condenser microphone and its manufacturing method of the present invention, a protrusion is included on the surface (or upper part) of the substrate to prevent the adhesive or fixing epoxy used for bonding the silicon condenser microphone and the circuit unit Resin spreads into undesired areas. Accordingly, it is possible to prevent contact defects from being caused between the contact surfaces of the case and the base due to adhesive or epoxy spreading to the contact portion of the case and the base.
虽然已经参照本发明的优选实施例对本发明进行了具体展示和描述,但是本领域技术人员应明白,在不脱离由所附权利要求限定的本发明的精神和范围的情况下,可以在形式和细节上实现各种改变。While the invention has been particularly shown and described with reference to preferred embodiments thereof, it should be understood by those skilled in the art that changes may be made in form and form without departing from the spirit and scope of the invention as defined by the appended claims. Various changes were made in the details.
附图说明 Description of drawings
图1是表示传统的硅电容传声器的封装结构的剖视图;Fig. 1 is a sectional view showing the packaging structure of a conventional silicon condenser microphone;
图2是表示电容传声器的结构的剖视图;2 is a cross-sectional view showing the structure of a condenser microphone;
图3是表示根据本发明第一实施例的硅电容传声器的封装结构的剖视图;3 is a cross-sectional view showing a package structure of a silicon condenser microphone according to a first embodiment of the present invention;
图4是表示图3的封装结构的分解的基底的立体图;FIG. 4 is a perspective view showing an exploded base of the package structure of FIG. 3;
图5是表示根据本发明第二实施例的硅电容传声器的封装结构的剖视图;5 is a cross-sectional view showing a packaging structure of a silicon condenser microphone according to a second embodiment of the present invention;
图6是表示图5的封装结构的分解的基底的立体图;FIG. 6 is a perspective view showing an exploded base of the package structure of FIG. 5;
图7是表示根据本发明第三实施例的硅电容传声器的封装结构的剖视图;7 is a cross-sectional view showing a packaging structure of a silicon condenser microphone according to a third embodiment of the present invention;
图8是表示图7的封装结构的分解的基底的立体图。FIG. 8 is a perspective view showing an exploded base of the package structure of FIG. 7 .
具体实施方式 Detailed ways
下面将参照附图详细地描述本发明的上述目的和其它目的、特征和优点。The above objects and other objects, features and advantages of the present invention will be described in detail below with reference to the accompanying drawings.
图2是表示电容传声器的结构的剖视图。Fig. 2 is a cross-sectional view showing the structure of a condenser microphone.
参照图2,垫圈104和振动板106堆叠在硅片100的第一侧上,且该硅片的第二侧的一部分被蚀刻以形成背板102。通过在硅片100上堆叠绝缘膜,且然后使该绝缘膜形成图案(patterning)而形成垫圈104。利用导电膜在其上形成振动板106。根据所示的结构,尽管振动板106布置在硅片100上,但是当振动板106和背板102彼此相对且垫圈104位于它们之间时,振动板106与背板102的位置可以交换。Referring to FIG. 2 , a
图3是表示根据本发明第一实施例的硅电容传声器的封装结构的剖视图,并且图4是表示图3的封装结构的分解的基底的立体图。3 is a sectional view showing a package structure of a silicon condenser microphone according to a first embodiment of the present invention, and FIG. 4 is a perspective view showing an exploded base of the package structure of FIG. 3 .
参照图3,根据上述方法制造的硅电容传声器120封装有电路单元140。电路单元140通过由于声源引起硅电容传声器120的振动板106振动而生成电信号。Referring to FIG. 3 , the
根据本发明,硅电容传声器120和电路单元140布置在具有后腔室174的基底160上。优选地,该基底160由陶瓷材料构成。该陶瓷材料耐热,且由于该陶瓷材料具有与构成硅电容传声器120和电路单元140的硅和金属大致相等的热膨胀系数,不会发生例如在高温热处理过程中的变形或结合特性下降的问题,因此该陶瓷材料是有利的。According to the present invention, the
在基底160上形成气孔172,从而流入硅电容传声器120中的外部空气可以流入后腔室174。因此,优选地,硅电容传声器120布置在形成气孔172的部分上。Air holes 172 are formed on the
另外,在基底160的后腔室174中形成支柱176。后腔室174是在基底160的上表面和其下表面之间的中空空间。因此,由于存在这样的可能性,即,基底160的上表面可能由于来自外部的过分冲击而塌陷,因此在后腔室174中形成支柱176以确保稳定性。优选地,支柱176由多孔材料构成,从而支柱176具有足以支撑陶瓷材料的强度和弹性,并允许自由的空气流通。此外,尽管只示出了一个支柱176,但是支柱的数量和位置是可变的。In addition,
硅电容传声器120和电路单元140通过芯片结合(die-bonding)而结合到基底160上,且通过引线键合(wire bonding)190而建立电连接。由于在芯片结合过程中使用的粘结剂和用于保持该结合的环氧树脂具有较小粘度,因此它们可能散布到不希望的区域。因此,可以在基底160上形成凸起180,以防止粘结剂和环氧树脂散布到不希望的区域。The
在如上所述将硅电容传声器120和电路单元140布置在基底160上之后,布置壳体200。在壳体200中形成开口210,然后用密封剂220覆盖该开口210。由于在开口210和密封剂220之间存在有小间隙,因此外部声源可以传送到内部的硅电容传声器120。After the
根据如图4所示的分解的基底160,通过结合第一室板160a、第二室板160b、第三室板160c而形成基底160。According to the decomposed
第一室板160a用作基底160的下表面。第二室板160b包括后腔室174和支柱176。第三室板160c构成基底160的上表面,并包括允许空气流入后腔室174的气孔172。在第三室板160c上形成用于防止粘结剂或环氧树脂散布的凸起180。The
上述结构以单纯的实施例举例说明。因此,在第一室板至第三室板之间可以结合有额外的室板。The above structure is illustrated as a purely embodiment. Therefore, additional chamber panels may be incorporated between the first to third chamber panels.
图5是表示根据本发明第二实施例的硅电容传声器的封装结构的剖视图,并且图6是表示图5的封装结构的分解的基底的立体图。5 is a sectional view showing a package structure of a silicon condenser microphone according to a second embodiment of the present invention, and FIG. 6 is a perspective view showing an exploded base of the package structure of FIG. 5 .
图5示出了这样的情况,其中后腔室174的尺寸大于图3中所示的基底160的后腔室的尺寸。FIG. 5 shows a case where the size of the
除了上表面的被硅电容传声器120和电路单元140覆盖的部分之外,基底160′的高度沿着基底160′的上表面的边缘部分增加。内部空间用作后腔室174以扩大后腔室174。如上所述,由于后腔室的尺寸增大而可以忽略后腔室中的压力,从而提高了传声器的灵敏度。The height of the base 160' increases along an edge portion of the upper surface of the base 160', except for a portion of the upper surface covered by the
虽然在图5中仅上表面的边缘部分的高度增加,但是基底的整个高度都可以增加以具有包围硅电容传声器和电路单元的结构。Although only the edge portion of the upper surface is increased in height in FIG. 5, the entire height of the substrate may be increased to have a structure surrounding the silicon condenser microphone and the circuit unit.
参照图6,结合多个室板160a′至160e′以形成基底160′。与第一实施例类似,第一室板160a′构成下表面,第二室板160b ′包括后腔室174和支柱176。Referring to FIG. 6, a plurality of
与第一实施例相反,第三室板160c′还包括沿着除了被硅电容传声器120和电路单元140覆盖的部分之外的侧边缘部分的后腔室174。第四室板160d′的后腔室174结合到与后腔室174的额外空间对齐的第三室板160c′上。然后将第五室板160e′布置在其上以覆盖上表面。Contrary to the first embodiment, the third chamber plate 160c' further includes a
图7是表示根据本发明第三实施例的硅电容传声器的封装结构的剖视图,并且图8是表示图7的封装结构的分解的基底的立体图。7 is a sectional view showing a package structure of a silicon condenser microphone according to a third embodiment of the present invention, and FIG. 8 is a perspective view showing an exploded base of the package structure of FIG. 7 .
图7表示这样的结构,其中可获得比基底160和160′的后腔室大的后腔室174。Figure 7 shows a structure in which a
除了被硅电容传声器120和电路单元140覆盖的部分之外,基底160″的高度沿着基底160″的上表面的边缘部分增加直到壳体200的上表面的高度。由于在这种情况下,基底160″的内部空间用作后腔室174,因此后腔室174可以被最大化。另外,由于基底160″的高度增加直到壳体200,因此壳体200可以制造成具有平坦的结构,从而与其中壳体200具有“∩”形状的情况相比简化了制造过程。The height of the base 160 ″ increases along the edge portion of the upper surface of the base 160 ″ up to the height of the upper surface of the
另外,布置有电路单元140的部分的高度与布置有硅电容传声器120的部分的高度不同,从而在硅电容传声器120下方的后腔室174可以更大。虽然图7示出了这样的情况,其中布置有硅电容传声器120的部分的高度比布置有电路单元140的部分的高度要高,但是所述高度可以自由变化。In addition, the height of the part where the
参照图8,示出了用于形成图7中所示的基底160″所需的多个室板160a″至160g″。如上所述,通过结合多个室板160a″至160g″来形成基底160″。在它们之间还可以结合额外的室板,且形状也可以改变。8, there is shown a plurality of
工业实用性Industrial Applicability
根据本发明的实施例,提供了硅电容传声器的封装结构及其制造方法,其中布置有硅电容传声器和电路单元的基底由耐热陶瓷材料构成,该陶瓷材料具有与硅电容传声器和电路单元的热膨胀系数相近的热膨胀系数,以防止在高温热处理过程中由于热而导致变形和结合特性的下降。According to an embodiment of the present invention, a packaging structure of a silicon condenser microphone and a manufacturing method thereof are provided, wherein the substrate on which the silicon condenser microphone and the circuit unit are arranged is made of a heat-resistant ceramic material, and the ceramic material has an incompatibility with the silicon condenser microphone and the circuit unit. The coefficient of thermal expansion is close to the thermal expansion coefficient to prevent deformation and decrease in bonding properties due to heat during high-temperature heat treatment.
根据本发明的实施例,提供了硅电容传声器的封装结构及其制造方法,其中通过结合多个室板而形成基底,从而可以以多种方式改变形状并可以形成用于后腔室的空间。According to an embodiment of the present invention, there are provided a package structure of a silicon condenser microphone and a manufacturing method thereof, in which a base is formed by combining a plurality of chamber plates so that the shape can be changed in various ways and a space for a rear chamber can be formed.
根据本发明的实施例,提供了硅电容传声器的封装结构及其制造方法,其中在后腔室中形成支柱以防止室板由于该后腔室而塌陷。According to an embodiment of the present invention, a package structure of a silicon condenser microphone and a manufacturing method thereof are provided, wherein a post is formed in a rear chamber to prevent a chamber plate from collapsing due to the rear chamber.
根据本发明的实施例,提供了硅电容传声器的封装结构及其制造方法,在基底的表面(或上部分)上包括一凸起,以防止用于粘结硅电容传声器和电路单元的粘结剂或固定环氧树脂散布到不希望的区域。According to an embodiment of the present invention, a packaging structure of a silicon condenser microphone and a manufacturing method thereof are provided, and a protrusion is included on the surface (or upper part) of the substrate to prevent bonding of the silicon condenser microphone and the circuit unit agent or fixing epoxy into undesired areas.
Claims (2)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050061363 | 2005-07-07 | ||
| KR1020050061363A KR100648398B1 (en) | 2005-07-07 | 2005-07-07 | Packaging Structure of Silicon Condenser Microphone and Manufacturing Method Thereof |
| KR10-2005-0061363 | 2005-07-07 | ||
| PCT/KR2005/002626 WO2007007929A1 (en) | 2005-07-07 | 2005-08-11 | Packaging structure of silicon condenser microphone and method for producing thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN1813490A CN1813490A (en) | 2006-08-02 |
| CN1813490B true CN1813490B (en) | 2012-08-22 |
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| CN200580000595XA Expired - Fee Related CN1813490B (en) | 2005-07-07 | 2005-08-11 | Package structure of silicon capacitor microphone and fabrication method thereof |
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| Country | Link |
|---|---|
| KR (1) | KR100648398B1 (en) |
| CN (1) | CN1813490B (en) |
| WO (1) | WO2007007929A1 (en) |
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| KR100722689B1 (en) | 2006-05-03 | 2007-05-30 | 주식회사 비에스이 | Silicon Condenser Microphone with Additional Back Chamber |
| KR100722687B1 (en) | 2006-05-09 | 2007-05-30 | 주식회사 비에스이 | Directional Silicon Condenser Microphone with Additional Back Chamber |
| KR100737726B1 (en) | 2006-07-10 | 2007-07-10 | 주식회사 비에스이 | MEMS microphone packaging structure |
| KR200448302Y1 (en) | 2007-05-26 | 2010-03-30 | 고어텍 인크 | Silicon condenser microphone |
| KR101008399B1 (en) * | 2007-09-03 | 2011-01-14 | 주식회사 비에스이 | Condenser microphone using ceramic package with inner wall wrapped in metallic or conductive material |
| CN102187685B (en) * | 2008-10-14 | 2015-03-11 | 美商楼氏电子有限公司 | Microphone having multiple transducer elements |
| WO2010048833A1 (en) * | 2008-10-28 | 2010-05-06 | 歌尔声学股份有限公司 | Silicon capacitor microphone |
| CN101478710B (en) * | 2009-01-17 | 2012-10-17 | 歌尔声学股份有限公司 | Silicon condenser microphone |
| JP5321111B2 (en) | 2009-02-13 | 2013-10-23 | 船井電機株式会社 | Microphone unit |
| KR101088400B1 (en) | 2009-10-19 | 2011-12-01 | 주식회사 비에스이 | Silicon condenser microphone with additional back chamber and method of manufacturing the same |
| US8809974B2 (en) | 2010-02-26 | 2014-08-19 | Ubotic Intellectual Property Company Limited | Semiconductor package for MEMS device and method of manufacturing same |
| CN102215448B (en) * | 2010-04-08 | 2015-04-01 | 北京卓锐微技术有限公司 | Silicon microphone packaging method capable of shielding electromagnetic interference, packaging body and electronic device |
| WO2011134167A1 (en) | 2010-04-30 | 2011-11-03 | Ubotic Intellectual Property Co., Ltd. | Air cavity package configured to electrically couple to a printed circuit board and method of providing same |
| WO2011134166A1 (en) | 2010-04-30 | 2011-11-03 | Ubotic Intellectual Property Co., Ltd. | Semiconductor package configured to electrically couple to printed circuit board and method of providing the same |
| US9467785B2 (en) | 2013-03-28 | 2016-10-11 | Knowles Electronics, Llc | MEMS apparatus with increased back volume |
| CN103663352B (en) * | 2013-12-30 | 2017-11-07 | 上海集成电路研发中心有限公司 | A kind of MEMS microphone package structure and method for packing |
| CN105323688A (en) * | 2014-08-04 | 2016-02-10 | 北京卓锐微技术有限公司 | Silicon capacitance microphone with enlarged back cavity |
| CN104822118B (en) * | 2015-05-06 | 2018-11-30 | 歌尔股份有限公司 | A kind of encapsulating structure of MEMS microphone |
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| KR100648398B1 (en) | 2006-11-24 |
| CN1813490A (en) | 2006-08-02 |
| WO2007007929A1 (en) | 2007-01-18 |
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