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TW201003876A - Lead frame and package of semiconductor device - Google Patents

Lead frame and package of semiconductor device Download PDF

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Publication number
TW201003876A
TW201003876A TW098110318A TW98110318A TW201003876A TW 201003876 A TW201003876 A TW 201003876A TW 098110318 A TW098110318 A TW 098110318A TW 98110318 A TW98110318 A TW 98110318A TW 201003876 A TW201003876 A TW 201003876A
Authority
TW
Taiwan
Prior art keywords
base
terminals
peripheral wall
molding resin
resin
Prior art date
Application number
TW098110318A
Other languages
Chinese (zh)
Inventor
Hiroshi Saitoh
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Corp filed Critical Yamaha Corp
Publication of TW201003876A publication Critical patent/TW201003876A/en

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Classifications

    • H10W70/479
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01DMEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D11/00Component parts of measuring arrangements not specially adapted for a specific variable
    • G01D11/24Housings ; Casings for instruments
    • G01D11/245Housings for sensors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061Electrical connection means
    • G01L19/0069Electrical connection means from the sensor to its support
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14Housings
    • G01L19/141Monolithic housings, e.g. molded or one-piece housings
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14Housings
    • G01L19/147Details about the mounting of the sensor to support or covering means
    • H10W76/153
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • H03H9/0538Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • H03H9/10Mounting in enclosures
    • H03H9/1007Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • H03H9/10Mounting in enclosures
    • H03H9/1064Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • H10W72/5449
    • H10W72/884
    • H10W72/932
    • H10W74/00
    • H10W90/753
    • H10W90/756

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

A lead frame including a stage and a plurality, of terminals is embedded in a mold resin including a base portion for mounting a semiconductor chip (e.g. a microphone chip), a peripheral wall disposed in the periphery of the base portion, and an extension portion extended outside of the peripheral wall, thus forming a package base. A plurality of holes is formed in the peripheral wall so as to expose the internal connection surface of the stage and the internal connection surfaces of the terminals. An extension portion of the stage is exposed on the extension portion of the mold resin in which the surfaces of the terminals are embedded. An extension portion (e.g. a brim) of a cover composed of a conductive material is attached to the extension portion of the mold resin of the package base, thus completely producing a semiconductor device.

Description

201003876 六、發明說明: 【發明所屬之技術領域】 本發明係關於用於半導體裝置内的引線框架及封裝。特 定言之,本發明係關於在封裝中部分嵌入模製樹脂内的引 線框架,諸如用於麥克風、感測器、SAW裝置、石英振盪 器及固態影像拾取裝置之封裝。 本申明案主張曰本專利申請案第2〇〇8_9〇474號之優先 權,其内容係以引用的方式併入本文中。 【先前技術】 習知上’已範例性設計用作⑪麥克風與壓力感測器的半 導體裝置使得麥克風封襄係固持於其令預先使用樹脂模製 引線框架的一預模製型中空封裝内側。 已發展使用預模製型封裝的各種半導體裝置並揭示於各 種文件中,諸如專利文件1及2。 專利文件1 :日本未審核專利申請公告案第2007-66967號 專利文件2:美國專利案第6,781,231號 專利文件1教導—種半導體裝置,纟中一半導體晶片係 大約位於—引線框架之中心處的-基台…模製 樹脂係整體形成以霸苗 .^ 11π亥基d之背側與環繞區域;互連引 線係從該基台外部延伸使 1 的該模製樹脂之1邊辟/ W分係在該基台外延伸 #° 土之上部表面上曝露。一杯狀金屬 盍子係置於該模製樹护 θ 周邊辟,…A 7 、 θ使侍其周邊端連結該模製樹脂之 σ 土 k㊉成環繞該半導體晶 子係電連接至料互連引線之曝露部分。 屬爲 134421.doc 201003876 從該^台外部佈置的該等互連引線之末梢端與該等弓I線 之末梢&係在_模製樹脂之背側上曝露 «板(或一外部電路板)之電路用於在其上裝設:半導: 裝置。201003876 VI. Description of the Invention: TECHNICAL FIELD The present invention relates to a lead frame and a package for use in a semiconductor device. In particular, the present invention relates to a lead frame that is partially embedded in a molded resin in a package, such as a package for a microphone, a sensor, a SAW device, a quartz oscillator, and a solid-state image pickup device. The present application claims priority to the present patent application Serial No. 2, the entire disclosure of which is incorporated herein by reference. [Prior Art] A semiconductor device which has been exemplarily designed for use as an 11-microphone and a pressure sensor allows the microphone package to be held inside a pre-molded hollow package in which the resin molded lead frame is previously used. Various semiconductor devices using pre-molded packages have been developed and disclosed in various documents such as Patent Documents 1 and 2. Patent Document 1: Japanese Unexamined Patent Application Publication No. 2007-66967 Patent Document 2: US Patent No. 6,781, 231 Patent Document 1 teaches a semiconductor device in which a semiconductor wafer system is located approximately at the center of a lead frame The -the base...the molded resin is integrally formed on the back side and the surrounding area of the cymbal. The interconnecting lead extends from the outside of the base to make 1 of the molded resin of the base/ The W sub-system is exposed on the surface of the upper part of the abutment #° soil. A cup-shaped metal tweezers is placed on the periphery of the molded tree to protect θ, ... A 7 , θ is such that the peripheral end of the whisker is joined to the molding resin, and the semiconductor crystal is electrically connected to the interconnecting leads. Exposure part. The genus is 134421.doc 201003876 The distal end of the interconnecting leads disposed outside the device and the distal end of the arched wire are exposed on the back side of the molded resin (or an external circuit board) The circuit is used to mount it on: semi-conducting: device.

專利文件2教導—種半導體裝置,其中一半導體晶片(例 士麥克風晶片)係裝設於一「平坦」外部基板之電路表 面上二該外部基板係接著使用-金屬殼體(或一金屬蓋子) 來覆盍並固定至該金屬殼體(或一金屬蓋子)。 專彳文件1之半導體裝置係設計使得該等互連引線之曝 露=係、連接至則線框架之基台與該金屬蓋子使得該半 導租:a片得、由金屬所環繞,#而改良屏蔽性質。此半導體 裝置I因為其中該引線框架係使用該樹脂簡單模製並聯合 之:簡單結構而以低成本製造。然、而,該製造方法需要二 種硬雜的彎曲程序,其中該等互連引線係垂直延伸使得其 —]卩刀係在6亥杈製樹脂之周邊壁之上部表面上曝露接 著其末梢端係對折並向下引導使得其在該模製樹脂之背側 上曝露。 在八有平坦」封裝的專利文件2之半導體裝置中,可 =用於Μ由晶粒接合來固定該半導體晶片之—接合劑可能 也出以致到達並覆蓋引線之内部端。$ 了防止其中該接合 劑溢出以致到達弓丨線之内部端的此—缺點,必需確保在晶 :裝没區域與引線之内部端之間的一足夠距離,從而防止 。亥接口劑朝引線之内部端意外溢出。此使得難以降低專利 文件2之半導體裝置之整體大小。 134421.doc 201003876 【發明内容】 本發明之一目的係提供一種引線框架及封裝,各具有用 於減小一半導體裝置之整體大小的一簡單結構。 在本發明中,一種引線框架係由以下所構成:一基△, 其係嵌入於該模製樹脂之基底部分内使得其—延伸::係 在該模製樹脂之延伸部分内延伸;及複數個端子,其係接 近該基台而形成並結合該模製樹脂之周邊壁與延伸部分而 彼此遠離,該引線框架絲人於—盒狀模製樹脂内^盒 狀模製樹脂包括一底部部分;一周邊壁,其係佈置於該 ^底部分之周邊上;及—延伸部分,其係在㈣邊壁外面 從該基底部分之周邊延伸。該基台之表面之—規定部分結 ^該周邊壁闕—㈣連接表面,而料端子之表面之規 定部分結合該周邊㈣作内部連接表面。該等端子之表面 之其他部分結合該模製樹脂之延伸部分用作較低表面,其 係在厚度方向上低於該基台之表面。 一種封裝基底係藉由以複數個孔係形成於該周邊壁内以 便部分曝露該基台之内部連接表面與該等端子之内部連接 表面之-方式使用該模製樹脂來密封該引線框架加以形 成’其中該基台之延伸部分係在詩I人該等端子之表面 的該模製樹脂之延伸部分上曝露。 田將由一導電材料所組成的一蓋子附著至用於曝露該基 口之延伸部分的該模製樹脂之延伸部分時,可屏蔽裝設於 "亥基口上亚由該周邊壁所環繞的一半導體晶片。此外,若 干孔係形成於在該模製樹脂之延伸部分向内佈置的周邊壁 134421.doc 201003876 内’以便曝露該基台之内部連接表面與該等端子之内部連 接表面。換言之,該等孔係含於該周邊壁内,而該模製樹 脂之延伸部分係佈置於該周邊壁外面。即,當經由晶粒接 合將該半導體晶片固定至該封裝基底之基底部分時,可可 靠地防止-接合劑朝該引線框架之内部連接表面與該模製 樹月曰之延伸部分溢出。此使得可接近晶片裝設區域來定位 該等内部連接表面。 此外4盍子係在該周邊壁外面附著至該模製樹脂之延 伸口P刀153日可该寻内部連接表面係經由該周邊壁之孔來加 以曝露。此致能該引線框架完全形成為一平板形狀。 — 可形成在與該基台之内部連接表面垂直相對的—位置處 攸§亥基台之背側突屮的_ .. ,一卜。卩連接表面以及在與該等端子 之内部連接表面垂直相對的位置處從該等端子之背側突出Patent Document 2 teaches a semiconductor device in which a semiconductor wafer (a microphone chip) is mounted on a circuit surface of a "flat" external substrate, and the external substrate is then used - a metal case (or a metal cover). Cover and fix to the metal casing (or a metal cover). The semiconductor device of the document 1 is designed such that the exposure of the interconnecting leads is connected to the base of the wire frame and the metal cover such that the semi-conducting: a piece of film, surrounded by metal, improved Shielding properties. This semiconductor device 1 is manufactured at a low cost because the lead frame is simply molded and combined using the resin: a simple structure. However, the manufacturing method requires two rigorous bending procedures in which the interconnecting leads are vertically extended such that the squeegee is exposed on the upper surface of the peripheral wall of the resin and then the distal end thereof. It is folded in half and guided downward so that it is exposed on the back side of the molded resin. In the semiconductor device of Patent Document 2 having an eight-flat package, it is possible to use 晶粒 to fix the semiconductor wafer by die bonding. The bonding agent may also be so as to reach and cover the inner end of the wiring. The disadvantage of preventing the adhesive from overflowing so as to reach the inner end of the bow line is to ensure a sufficient distance between the mounting area and the inner end of the lead to prevent it. The interface agent unexpectedly overflows toward the inner end of the lead. This makes it difficult to reduce the overall size of the semiconductor device of Patent Document 2. SUMMARY OF THE INVENTION One object of the present invention is to provide a lead frame and package each having a simple structure for reducing the overall size of a semiconductor device. In the present invention, a lead frame is constructed by: a base Δ embedded in a base portion of the molded resin such that its extension: extends in an extended portion of the molded resin; And a terminal is formed adjacent to the base and is separated from each other by a peripheral wall and an extending portion of the molding resin, wherein the lead frame is molded into the resin, and the box molding resin comprises a bottom portion a peripheral wall disposed on a periphery of the bottom portion; and an extension portion extending from a periphery of the base portion outside the (four) side wall. The surface of the abutment defines a portion of the peripheral wall - (4) connecting surface, and a predetermined portion of the surface of the material terminal is bonded to the periphery (4) as an internal connecting surface. The other portion of the surface of the terminals is bonded to the extended portion of the molded resin for use as a lower surface which is lower in thickness than the surface of the base. A package substrate is formed by sealing a lead frame by using a molding resin by partially forming a plurality of holes in the peripheral wall to partially expose an inner connecting surface of the base and an inner connecting surface of the terminals. 'The extension of the abutment is exposed on the extended portion of the molded resin on the surface of the terminals of the poet I. When a cover composed of a conductive material is attached to an extended portion of the molded resin for exposing the extended portion of the base, the field is shieldably mounted on the outer wall of the base Semiconductor wafer. Further, a plurality of holes are formed in the peripheral wall 134421.doc 201003876 disposed inwardly of the extended portion of the molded resin to expose the inner connecting surface of the base and the inner connecting surface of the terminals. In other words, the holes are contained in the peripheral wall, and the extended portion of the molded resin is disposed outside the peripheral wall. That is, when the semiconductor wafer is fixed to the base portion of the package substrate via die bonding, it is possible to reliably prevent the bonding agent from overflowing toward the inner connecting surface of the lead frame and the extended portion of the molding tree. This makes it possible to access the internal mounting surfaces by accessing the wafer mounting area. Further, the four tweezers are attached to the extension port P knife 153 of the molded resin outside the peripheral wall, and the inner connecting surface is exposed through the hole of the peripheral wall. This enables the lead frame to be completely formed into a flat plate shape. - can be formed at a position perpendicular to the internal connection surface of the abutment at the position of the back side of the base of the base. a connecting surface and protruding from the back side of the terminals at a position perpendicular to the internal connecting surface of the terminals

的複數個外部連接表s。μ L ,π 表面此外’可於與該等外部連接表面 二同的高度來形成從該基台之背側突出的複數個支撐物。 =外部連接表面與該等支撐物係在該模製樹脂之背側上 :::此使得可藉由用於形成該模製樹脂的-射出金屬模 持㈣線框架使得料外部連接表面與支撐 物接觸δ亥射出金屬模具之内表面。 二重封裝係藉由該封裝基底與用於覆蓋該周邊 之内部空間的蓋子所椹士、 甘& ^ 蓋子之柚 ,八中由一導電材料所組成的該 邱八^ 遠,、彖)係電連接至該模製樹脂之延伸 於該㈣部連接表㈣僅在該 分向内佈置的該周邊壁 ^ ' 遵土之„亥4孔内曝露,可可靠地防止一 134421.doc 201003876 接合劑朝該等内部連接表面溢出。 -種半導體襄置係以_半導體 牟$其二τ μ + 六1糸裝3又於在該引線框 ::基.正上方的該封裝基底之模製樹脂之 經由該周邊壁之孔來電連接至該基台與端子 面之-方錢㈣封裝來產生。 卩連接表 種麥克風封裝係以—方式使用該封裝來產生使 裝設於該引線框架之基台正上方的封裝基底 …Γ内部空間連通的一音孔係形成於該蓋子或該封 =内。由於由該周邊壁所環繞的内部空間係藉由靠近 °”克風晶片佈置該周邊壁來減少,可增加該麥克風封裝 之共振頻率。 另外’共同用作該音孔的複數個小孔可形成於經由形成 於该模製樹脂内的—t π孔來曝露的該基台之曝 内。 如上所說明,可展現下列效果。 (a) 可防止用於將該蓋子接合至該封裝基底之模製樹脂之 延伸部分上的-接合劑朝僅在該周邊壁之孔内曝露的 該等内部連接表面溢出。 (b) 因為该等内部連接表面係含於該周邊壁内,故可靠近 D亥半導體晶片來佈置該等内部連接表面。 ()可減小該半導體裝置之整體大小,從而降低該半導體 裝置之製造成本。 (d)可由於用於在一外部基板上裝設該半導體装置的一減 小區域而實現一高密度封裝。 134421.doc 201003876 【實施方式】 將參考附圖藉由範例來進一步詳細地說明本發明。 1 ·第一具體實施例 將參考圖1至8來說明依據本發明之—第—具體實施例之 一半導體裝置1。如圖4、6及7中所示’半導體裝置i儲存 一麥克風晶片2與-控制晶片(或-電路晶片)3,其均囊封 於一封裝4内。封裝4係由以下所構成:—封裝基底7,其A plurality of external connection tables s. The μ L , π surface can be formed at a height similar to the outer connecting surfaces to form a plurality of supports projecting from the back side of the base. = the outer connecting surface and the supports are on the back side of the molding resin::: this allows the outer connecting surface and the support to be supported by the - ejecting metal mold (four) wire frame for forming the molding resin The object contacts δ hai to project the inner surface of the metal mold. The double-package is made up of the package base and the cover for covering the inner space of the periphery, and the cover of the gentleman, the gans, the cover, and the octopus, which consists of a conductive material. The connection of the molded resin to the (4) connection table (4) is only exposed in the peripheral wall of the partition wall, and is exposed in the hole of the sea, which can reliably prevent a joint of 134421.doc 201003876 The agent overflows toward the internal connection surfaces. - The semiconductor device is made of _semiconductor 其 $ τ μ + 6 糸 3 and 3 is molded resin on the package substrate directly above the lead frame: The socket is electrically connected to the base and the terminal surface via the hole of the peripheral wall. The 卩 connection type microphone package uses the package to generate the base mounted on the lead frame. A sound hole that is connected to the inner surface of the package substrate is formed in the cover or the seal. The inner space surrounded by the peripheral wall is reduced by arranging the peripheral wall adjacent to the wind wafer. Can increase the resonance of the microphone package Rate. Further, a plurality of small holes collectively used as the sound hole may be formed in the exposure of the base exposed through the -t π hole formed in the molded resin. As explained above, the following effects can be exhibited. (a) The bonding agent for adhering the cover to the molding resin of the package substrate can be prevented from overflowing toward the internal connection surfaces exposed only in the holes of the peripheral wall. (b) Since the inner connecting surfaces are contained in the peripheral wall, the inner connecting surfaces may be disposed adjacent to the D-chip semiconductor wafer. () can reduce the overall size of the semiconductor device, thereby reducing the manufacturing cost of the semiconductor device. (d) A high-density package can be realized due to a reduction region for mounting the semiconductor device on an external substrate. 134421.doc 201003876 [Embodiment] The present invention will be described in further detail by way of examples with reference to the accompanying drawings. 1. First Embodiment A semiconductor device 1 according to a first embodiment of the present invention will be described with reference to Figs. As shown in Figures 4, 6 and 7, the semiconductor device i stores a microphone chip 2 and a control chip (or - circuit wafer) 3, each of which is encapsulated in a package 4. The package 4 is composed of: a package substrate 7, which

-有平板形狀的—引線框架5 ;及一盒狀模製樹脂 6’其係與引線框架5整體形成;及一蓋子8,其用於關閉 封裝基底7之上部部分β 複數個引線框架(每—者對應於引線框架5)係在經受壓 製工作的—金屬板之_帶狀薄片中連續形成並線性對齊。 在此說明書中,相對於圖丨中所示之引線框架5,—上部/ :部方向係稱為-垂直方向,而—左/右方向係稱為_水 平方向(或&向方向)。參考數字9指定用於將引線框架$ 連接至藉由衝孔所形成之—外部框架1G的連接。 ” 引線框架5包括一某a ! ! ^ 土 σ 11,其係接近一電源供應端子 12、-輸出端子U及—增益端子14,該等端子係其間使用 規疋距離來佈置且經由兮梦、生 由該等連接9來分別連接至外部框架 1 0 〇 引線框架5係完全形成為_矩形形狀,其中基台u係佈 置於由相鄰兩側定義的-邊角周目,該相鄰兩側進而界定 其-主要部分15 ’且其中兩個延伸部分16及17係從主要部 分15延伸並聯合該主要部分。該等延伸部分職丨了之末梢 134421.doc 201003876 兩側上的大約中心位置 端係佈置於該矩形形狀之其他相鄰 處。 此外,該三個端子12至14係分別佈置於外部框㈣所環 繞之矩形形狀之其他三個邊角處。内部連接表面21、22及 23關於半導體晶片2及3佔據該等端子&似此規定區 域,稍後將說明該等半導體晶片之細節。該等端子ΐ2^ 之其他區域(除該等内部連接表面21至23外)係藉由半敍刻 來減少厚度’從而形成較低表面24,其在引線框架5之厚 度方向上低於該等内部互連表面21至23。 如圖1中所*,主要部分15之邊角與該等延伸部分16及 17之末梢端係佈置於引線框架5之周邊内◦此外,半蝕刻 車又低表面24係形成於在引線框架5之周邊内佈置於其他三 個邊角處的該等端子12至14内,其中該等内部連接表面Η 至23係從引線框架5之周邊向内佈置。即,該等端子η至 14之内。卩連接表面21至23係佈置於用於形成模製樹脂6(稱 後將說明)之一周邊壁的一區域A(在^中由虛線界定)内 側。佈置於區域八内心勺延伸部分16之一部分用作用於基 台U的一接地連接表面25。基台11之主要部分丨5之邊角、 "亥等延伸α卩分16及17之末梢端及該等端子12至14之較低表 面24係佈置於用於在區域a外面形成模製樹脂6之一延伸部 分的一延伸區域内用於形成模製樹脂6之周邊壁。 如圖2中所示,除其四個矩形邊角外,引線框架$之背側 係二父半姓刻(參見影線區域)。引線框架5之背側之四個矩 升v邊角用作外部連接表面26至29,其係關於用於在其上裝 134421.doc -10· 201003876 δ又半導體晶片1的一外部基板(或一外部電路板)而放置。 在圖2中所示之基台丨丨之背侧中,外部連接表面29係佈 置於主要部分15之右上邊角處;外部連接表面27係佈置於 左下邊角處以便匹配端子13之整體矩形背側;外部連接表 面26係佈置於左上邊角處以便匹配端子12之背側,一延伸 部分30從該背側朝圖2之下部側延伸;且外部連接表面μ 係佈置於右下邊角處以便匹配端子14之背側,一延伸部分 3一1係從該背側朝圖2之左側延伸。延伸部分”及”兩者= 經受半㈣並因而與引線框架5之其他區域相比減少厚 度。該等端子12至14之所有外部連接表面26至28以及基台 11之外部連接表面29係形成為具有規定尺寸之實質上相同 =瓜I狀’其中四個外部連接表面26至⑼系佈置於引線框 架5之背側之四個邊角處。關於此點,該等端子12及14之 延伸部分3G及31之表面對應於㈣連接表面21及23。a flat-shaped lead frame 5; and a box-shaped molding resin 6' integrally formed with the lead frame 5; and a cover 8 for closing the upper portion of the package substrate 7 by a plurality of lead frames (per The corresponding lead frame 5) is continuously formed and linearly aligned in the strip-like sheet of the metal sheet subjected to the pressing work. In this specification, with respect to the lead frame 5 shown in Fig. 5, the upper/: direction is referred to as - vertical direction, and the left/right direction is referred to as "_ horizontal direction" (or & direction). Reference numeral 9 designates a connection for connecting the lead frame $ to the outer frame 1G formed by punching. The lead frame 5 includes a certain a! ! ^ soil σ 11, which is close to a power supply terminal 12, an output terminal U, and a gain terminal 14, which are arranged with a gauge distance therebetween and via a nightmare, The lead frames 5 are connected to the outer frame 10 by the connections 9 respectively. The lead frame 5 is completely formed into a rectangular shape, wherein the base u is arranged on the side corners defined by the adjacent sides, the adjacent two The side further defines its - main portion 15' and wherein the two extensions 16 and 17 extend from the main portion 15 and join the main portion. The extensions serve the approximate center position on both sides of the end 134421.doc 201003876 The end portions are arranged at other adjacent sides of the rectangular shape. Further, the three terminals 12 to 14 are respectively disposed at the other three corners of the rectangular shape surrounded by the outer frame (four). The inner connecting surfaces 21, 22 and 23 Regarding the semiconductor wafers 2 and 3 occupying the terminals & like the prescribed regions, details of the semiconductor wafers will be described later. Other regions of the terminals (2^ (except the internal connection surfaces 21 to 23) are borrowed. Semi-synthesis To reduce the thickness' to form a lower surface 24 which is lower in the thickness direction of the lead frame 5 than the internal interconnect surfaces 21 to 23. As in Figure 1, the corners of the main portion 15 and the extensions The distal ends of 16 and 17 are disposed within the periphery of the lead frame 5. Further, the half-etched car and the lower surface 24 are formed in the terminals 12 to 14 disposed at the other three corners in the periphery of the lead frame 5. Therein, wherein the inner connecting surfaces Η to 23 are arranged inwardly from the periphery of the lead frame 5. That is, the terminals η to 14 are located. The 卩 connecting surfaces 21 to 23 are arranged to form the molding resin 6 ( One of the peripheral walls is defined as an inner side of one of the peripheral walls (defined by a broken line in the middle). One portion of the extended portion 16 disposed in the inner portion of the region eight serves as a ground connection surface 25 for the base U. The base 11 The main portion of the 丨5 corner, the distal end of the extended 卩 16 16 and 17 and the lower surface 24 of the terminals 12 to 14 are arranged to form the molding resin 6 outside the region a. a peripheral wall of an extended portion for forming a peripheral wall of the molded resin 6 As shown in Fig. 2, except for its four rectangular corners, the back side of the lead frame $ is engraved with the second father and the half (see the hatched area). The four sides of the lead frame 5 are raised by the four corners. The external connection surfaces 26 to 29 are placed with respect to an external substrate (or an external circuit board) for mounting the 134421.doc -10·201003876 δ semiconductor wafer 1 thereon. In the back side of the abutment, the outer connecting surface 29 is disposed at the upper right corner of the main portion 15; the outer connecting surface 27 is disposed at the lower left corner to match the overall rectangular back side of the terminal 13; the outer connecting surface 26 Arranged at the upper left corner to match the back side of the terminal 12, an extension portion 30 extends from the back side toward the lower side of FIG. 2; and the external connection surface μ is disposed at the lower right corner to match the back side of the terminal 14. An extension portion 3-1 extends from the back side toward the left side of FIG. Both the extensions "and" = experience half (four) and thus reduce the thickness compared to other areas of the lead frame 5. All of the external connection surfaces 26 to 28 of the terminals 12 to 14 and the external connection surface 29 of the base 11 are formed to have substantially the same size = melon shape] wherein four external connection surfaces 26 to (9) are arranged Four corners of the back side of the lead frame 5. In this regard, the surfaces of the extensions 3G and 31 of the terminals 12 and 14 correspond to the (4) connection surfaces 21 and 23.

L 在四側之四個中心處並接近四個邊角而佈置的所有八個 =9係以與外部連接表面29相同的高度來形成,從而形 、撐物32及33(其係接觸用於形成模製樹脂 具)。類似於該等支撐物32月^ + 部連接表面相_高产开,成=署一支撑物34係以與該外 之背側上的並佈置於端子M之延伸部分31 處,即在延伸部分31内在其下部區 =引線框架5之水平方向(或寬度方向)上在一大約中心 位置處。所有連接9均 為最初金屬板。 、·、又+姓刻以便維持最初厚度作 模製樹脂6係與具有以上結構之引線框架5整體形成,從 134421.doc 201003876 而开V成圖3中所不之封裝基底7。如圖3及4中所示’封裝基 底7係凡王以—盒形狀來形成並由以下所構成:具有_矩 形板形狀的一某麻立β八d 1 -Μ- , c 底0Ρ 77 41,其係伸長以便裝設線性鄰接在 (的夕克風晶片2與控制晶片3 ;—周邊壁42 ,其具有佈 置於基底部分41之周邊上的-稜柱形狀;及-延伸部分 43,其係從周邊壁42之下部區段整體延伸。 引線框架5之實質上中心部分(即佔據圖1中m示之區g 二其,位於周邊壁42内)之内側的基台11之表面及背側)係 70全肷入於基底部分41内。周邊壁42之斷面具有一梯形形 狀,其中其寬度從下部區段向其上部區段逐漸減少。此 外’包括基台n之主要部分15之一部分、延伸部分16及17 之中間部分(其中延伸部分16用作内部連接表面25)及端子 12至14之内部連接表面21至23及較低表面24的區域a係部 刀嵌入於基底部分41内。如圖3中所示,周邊壁42之一規 定。卩刀係降低咼度且在略微加寬寬度以形成一較寬部分 44。用於部分曝露基台u之内部連接表面^與端子a至μ 之内部連接表面2 1至23的四個孔45係形成於周邊壁42之較 寬部分44内。 從周邊壁42外部延伸的延伸部分43係形成於與基底部分 41相同的平面内以便在圖i中所示之區域a外部配置引線框 架5之外部部分。基台Π之主要部分15之邊角與引線框架5 之延伸部分1 6及丨7之末梢端係在延伸部分43之表面上曝 路’而端子1 2至14之半蝕刻較低表面24係嵌入於模製樹脂 6内的延伸部分43内。延伸部分43之表面位於與基台丨1之 134421.doc 12 201003876 曝露表面及延伸部分16及17相同的平面内。 如圖5中所不,引線框架5之半蝕刻部分係嵌入於模製樹 脂6之背側内’其中基台u之外部連接表㈣與端子12至 14之外部連接表面26至28係在模製樹脂6之背側之四個邊 角上曝露,而佈置於基⑽内的切物32、现“係也在 模製樹脂6之背側上曝露。 圖6及7中所示’麥克風晶片2與控制晶片3係經由 晶粒鍵46來固定至封裝基底7之基底部分41上其中其係 經由接合線47來電連接至端子12至14之内部連接表面21至 23與基台U之内部連接表面25,料内部連接表面均在穿 過模製樹脂6之周邊壁42之較寬部分44的孔45内側曝露。 麥克風晶片2係設計使得回應壓力振動(諸如聲音壓力之振 動)而振動的-隔膜電極係與—固定電極相對定位,從而 回應該隔膜電極之振動來偵測靜電電容之振動。控制晶片 3包括麥克風晶片2之-電源供應電路與用於放大麥克風晶 片2之輸出信號的一放大器。 裝設於封裝基底7上的一蓋子8係由一導電金屬材料(諸 如銅)所經成並經受拉製封裝基底7之周邊壁U之高度◎一 側壁52係形成於蓋子8之一頂部部分“之周邊内,盆中一 邊緣53係形成於側壁52之下部端處且平行於頂部部扣而 水平伸長。一音孔54係形成以穿過蓋子8之頂部部分51的 -規定位置。㈣7中所示’當將蓋子8裝設於封裝基底7 上時,頂部部分5·Γ才 1封裝基底7之周邊㈣所界定的一 内部空間55’其中内部空間55經由音孔冲一外部空間連 134421.doc ·]3· 201003876 通’且其中側壁52係佈置於周邊壁42外面使得邊緣53係農 設於封裝基底7之延伸部分43上。封裝基底7係以邊緣53係 經由一導電黏著劑56來固定至延伸部分43上之_方式使用 蓋子8來裝配,其中在延伸部分43上曝露的基台n之規定 部分係經由導電黏著劑56來電連接至蓋子8。即,封裝基 底7係使用蓋子8來加以裝配,從而完全形成封裝* ^在封 裝4中’蓋子8係電連接至引線框架5之基台丨丨,且半導體 晶片2及3係包容於内部空間55内。 接下來’將參考圖8來說明半導體裝置1之—製造方法。 首先,使一金屬板經受半蝕刻,同時遮蔽其規定部分以 便將圖1及2中所示之引線框架5之影線區域之厚度減少至 取初厚度的大約一半。藉由壓製工作來衝孔整體輪廓,從 而形成經由該等連接9來連接至外部框架1 〇的引線框架5。 引線框架5可能在半蝕刻部分内具有較小不規則性,但實 質上形成為一平面板形狀。 接下來,將引線框架5放置於一射出金屬模具内,將— 熔化树脂注入至其内以產生在其内包容引線框架5的模製 樹脂6。 圖8顯不將已經受壓製工作的引線框架5放置於該射出金 屬杈具内,其中在一上部模具6 1與一下部模具62之間形成 用於引入e亥溶化樹脂的一腔63。在一平面圖中,該等端子 12至14之内部連接表面21至23與基台11之内部連接表面25 係在引線框架5之表面上曝露。在一後視圖中,外部連接 表面26至29、基台11之支撐物32及33及端子14之支撐物34 134421 .doc -14· 201003876 係在引線框架5之背側内曝露。該等曝露部分係接觸該射 出金屬模具之上部模具61及下部模具62之内表面而形成。 引線框架5係在腔63内側支撐使得形成於引線框架5之表面 及背側上的曝露部分接觸上部模具61及下部模具62之内表 面。特定言之,基台11之表面係在封裝基底7之基底部分L All eight=9 lines arranged at four centers on four sides and close to four corners are formed at the same height as the outer connecting surface 29, so that the shapes, struts 32 and 33 (the system contacts are used for Forming a molded resin). Similar to the support, the 32-degree connecting surface phase is high-producing, and the support 34 is attached to the outer back side and disposed at the extended portion 31 of the terminal M, that is, in the extended portion. 31 is located at an approximately central position in the lower direction = the horizontal direction (or the width direction) of the lead frame 5. All connections 9 are the original metal plates. And the + surname is to maintain the initial thickness as the molded resin 6 is integrally formed with the lead frame 5 having the above structure, and is opened from 134421.doc 201003876 to the package substrate 7 which is not shown in FIG. As shown in FIGS. 3 and 4, the package substrate 7 is formed in a box shape and is composed of a shape of a rectangular plate having a shape of a rectangular plate and a bottom portion of the substrate. Elongating to accommodate a linear abutment of the wafer wafer 2 and the control wafer 3; a peripheral wall 42 having a prism shape disposed on the periphery of the base portion 41; and an extension portion 43 Extending integrally from the lower section of the peripheral wall 42. The surface of the base 11 and the back side of the substantially central portion of the lead frame 5 (i.e., occupying the area indicated by m in Fig. 1 and located in the peripheral wall 42) The system 70 is fully inserted into the base portion 41. The cross section of the peripheral wall 42 has a trapezoidal shape in which its width gradually decreases from the lower section to the upper section thereof. Further, 'the portion including the main portion 15 of the base n, the intermediate portion of the extended portions 16 and 17 (where the extended portion 16 serves as the inner connecting surface 25), and the inner connecting surfaces 21 to 23 and the lower surface 24 of the terminals 12 to 14 The region a is partially embedded in the base portion 41. As shown in Figure 3, one of the perimeter walls 42 is defined. The file reduces the twist and widens the width slightly to form a wider portion 44. Four holes 45 for partially connecting the inner connecting surface of the base u and the inner connecting surfaces 2 1 to 23 of the terminals a to μ are formed in the wider portion 44 of the peripheral wall 42. An extended portion 43 extending from the outside of the peripheral wall 42 is formed in the same plane as the base portion 41 to arrange the outer portion of the lead frame 5 outside the region a shown in Fig. i. The corners of the main portion 15 of the abutment 与 and the distal ends of the extension portions 16 and 7 of the lead frame 5 are exposed on the surface of the extension portion 43 and the half surfaces of the terminals 12 to 14 are etched lower surface 24 It is embedded in the extended portion 43 in the molded resin 6. The surface of the extension portion 43 is located in the same plane as the 134421.doc 12 201003876 exposed surface and the extended portions 16 and 17 of the base 丨1. As shown in Fig. 5, the half-etched portion of the lead frame 5 is embedded in the back side of the molded resin 6 'where the external connection table (4) of the base u and the external connection surfaces 26 to 28 of the terminals 12 to 14 are attached to the mold The four corners of the back side of the resin 6 are exposed, and the cut 32 disposed in the base (10) is now exposed on the back side of the molded resin 6. The microphone chip shown in Figures 6 and 7 2 and the control wafer 3 are fixed to the base portion 41 of the package substrate 7 via the die bond 46, wherein the internal connection surfaces 21 to 23 of the terminals 12 to 14 are electrically connected to the internal connection of the base U via the bonding wires 47. The surface 25, the inner connecting surface of the material, is exposed inside the hole 45 of the wider portion 44 of the peripheral wall 42 of the molding resin 6. The microphone chip 2 is designed to vibrate in response to pressure vibrations (such as vibration of sound pressure) - The diaphragm electrode is positioned opposite to the fixed electrode to reflect the vibration of the diaphragm electrode to detect the vibration of the electrostatic capacitor. The control wafer 3 includes a power supply circuit of the microphone chip 2 and an amplifier for amplifying the output signal of the microphone chip 2. Installation A cover 8 on the package substrate 7 is formed of a conductive metal material (such as copper) and is subjected to the height of the peripheral wall U of the drawn package substrate 7. A side wall 52 is formed on the periphery of one of the top portions of the cover 8. Inside, an edge 53 of the basin is formed at the lower end of the side wall 52 and is horizontally elongated parallel to the top portion. A sound hole 54 is formed to pass through the prescribed position of the top portion 51 of the cover 8. (4) As shown in Fig. 7, when the cover 8 is mounted on the package substrate 7, the top portion 5 is an internal space 55' defined by the periphery (4) of the package substrate 7, wherein the internal space 55 is punched through the sound hole to an external space. 134421.doc ·]3· 201003876 The 'and the side wall 52 are arranged outside the peripheral wall 42 such that the edge 53 is planted on the extended portion 43 of the package substrate 7. The package substrate 7 is assembled using the cover 8 with the edge 53 attached to the extension 43 via a conductive adhesive 56, wherein the specified portion of the base n exposed on the extension 43 is via the conductive adhesive 56. The call is connected to the cover 8. That is, the package substrate 7 is assembled using the cover 8 to completely form the package. * In the package 4, the cover 8 is electrically connected to the base of the lead frame 5, and the semiconductor wafers 2 and 3 are contained in the internal space. Within 55. Next, a method of manufacturing the semiconductor device 1 will be described with reference to FIG. First, a metal plate is subjected to half etching while shielding a prescribed portion thereof to reduce the thickness of the hatched region of the lead frame 5 shown in Figs. 1 and 2 to about half of the initial thickness. The overall contour is punched by the pressing work, thereby forming the lead frame 5 connected to the outer frame 1 through the connections 9. The lead frame 5 may have a small irregularity in the half etching portion, but is formed in a substantially planar plate shape. Next, the lead frame 5 is placed in an injection metal mold into which molten resin is injected to produce a molding resin 6 in which the lead frame 5 is housed. Fig. 8 shows that the lead frame 5 which has been subjected to pressing work is placed in the injection metal cookware, and a cavity 63 for introducing the e-melting resin is formed between the upper mold 61 and the lower mold 62. In a plan view, the inner connecting surfaces 21 to 23 of the terminals 12 to 14 and the inner connecting surface 25 of the base 11 are exposed on the surface of the lead frame 5. In a rear view, the outer connecting surfaces 26 to 29, the supports 32 and 33 of the base 11, and the supports 34 134421 .doc -14· 201003876 of the terminal 14 are exposed in the back side of the lead frame 5. The exposed portions are formed by contacting the inner surfaces of the upper mold 61 and the lower mold 62 of the injection metal mold. The lead frame 5 is supported inside the cavity 63 so that the exposed portions formed on the surface and the back side of the lead frame 5 contact the inner surfaces of the upper mold 61 and the lower mold 62. Specifically, the surface of the base 11 is attached to the base portion of the package substrate 7.

41内使用-樹脂來加以密封,其中一相對較大間隙係形成 於表面U與上部模具61之内表面之間。基台u係在其表面 及背側兩者處支撐,因為形成於基台u之背侧上的支撐物 32及33接觸下部模具62之内表面而封裝基底7之延伸部分 43係緊密地固持於上部模具61與下部模具62之間。即,引 線框架5係藉由上部模具61及下部模具62來穩固地固定於 適當位置上以免由於射出壓力而偏斜或移動。 在模製樹脂6係與引線框架5整體形成之後,半導體晶片 2及3係經由晶粒鍵46來^至封裝基底7之基底部:41 上,且其係經由線接合來電連接至端子12至14之内部連接 表面21至23與基台n之内部連接表㈣,該等内部連接表 ^句在$成於周邊壁42之較寬部分Μ内的孔Μ内曝露。接 Z紅由塗敷至延伸部分43的導電黏著劑%將獨立於封裝 二…產生的蓋子8固定地裳設於封裝基底7上。在此狀 引線㈣(各對應於引線框架5)係經由該等連 鄰接在—起,而複數個蓋子(各對應於蓋 ^ A由連接(未顯示)來互連以鄰接在一起,使 = 基底(各對應於封裝基™使上: 此木水十互連以鄰 — (。因此,該等蓋子係同時接合 I34421.doc 201003876 至具有該等弓I線框架的該等封裝基底。 在完成該接合程序之後,從該等模製樹脂突出的該等引 、泉框木之連接與該等蓋子之連接係共同經受切割,從而產The resin is sealed by 41 using a resin, and a relatively large gap is formed between the surface U and the inner surface of the upper mold 61. The base u is supported at both its surface and the back side because the supports 32 and 33 formed on the back side of the base u contact the inner surface of the lower mold 62 and the extended portion 43 of the package substrate 7 is tightly held. Between the upper mold 61 and the lower mold 62. That is, the lead frame 5 is firmly fixed in place by the upper mold 61 and the lower mold 62 so as not to be deflected or moved by the injection pressure. After the molding resin 6 is integrally formed with the lead frame 5, the semiconductor wafers 2 and 3 are bonded to the base portion 41 of the package substrate 7 via the die bond 46, and are electrically connected to the terminal 12 via wire bonding. The internal connection surfaces 21 to 23 of the 14 are connected to the internal connection table (4) of the base n, and the internal connection statements are exposed in the apertures formed in the wider portion of the peripheral wall 42. The conductive adhesive %, which is applied to the extended portion 43, is fixedly attached to the package substrate 7 independently of the cover 8 produced by the package. In this case, the lead wires (four) (each corresponding to the lead frame 5) are abutted via the links, and a plurality of covers (each corresponding to the cover A are interconnected by a connection (not shown) to abut together, Substrates (each corresponding to the package base TM are made up: this wood water is interconnected to be adjacent - (. Therefore, the lids simultaneously join I34421.doc 201003876 to the package substrates having the bow I-line frames. After the joining process, the joints of the lead and the spring frame protruding from the molding resin are subjected to cutting together with the joints of the caps, thereby producing

生個別件產品(各對應於由引線框架5、封裝基底7及蓋子8 所構成的封裝4)。 I 半導體裝置1係以端子12至丨4與基台u ⑽係焊接至該外部基板之一方式裝設於一 (或一外部電路板)上。在圖7中所示之半導體裝置中,嵌入 於基底部分41内的基台1}係佈置於半導體晶片2及3下面; 半導體晶片2及3係連接至基台丨丨之内部連接表面25 ;該蓋 子係經由導電黏著劑56來固定地接合至基台11之延伸部分 16及17 ;且蓋子8覆蓋於半導體晶片2及3上方。半導體晶 片2及3係由基台丨丨與蓋子8所環繞,且基台丨丨之外部連接 表面29係經由該外部基板來接地;因此可屏蔽半導體晶片 2及3免受外部電磁波影響。 在封裝基底7中,周邊壁42係垂直於佈置於用於固定裝 設半導體晶片2及3的基底部分41與使用蓋子8之邊緣53所 固疋的延伸部分43之間,且端子12至14之内部連接表面21 至23與基台11之内部連接表面25係在形成於周邊壁42之較 寬部分44内的該等孔45内曝露;因此,周邊壁42阻擔晶粒 鍵46與導電黏著劑56,從而防止其經由周邊壁42朝該等孔 45溢出。此允許靠近内部連接表面21至23及25來定位基底 部分41之晶片裝設區域;因而可減小半導體裝置1之整體 區域。 134421.doc 16 201003876Individual products (each corresponding to the package 4 composed of the lead frame 5, the package substrate 7, and the cover 8). The semiconductor device 1 is mounted on an (or an external circuit board) by soldering the terminals 12 to 4 and the base u (10) to the external substrate. In the semiconductor device shown in FIG. 7, the substrate 1} embedded in the substrate portion 41 is disposed under the semiconductor wafers 2 and 3; the semiconductor wafers 2 and 3 are connected to the internal connection surface 25 of the substrate; The cover is fixedly bonded to the extensions 16 and 17 of the submount 11 via a conductive adhesive 56; and the cover 8 overlies the semiconductor wafers 2 and 3. The semiconductor wafers 2 and 3 are surrounded by the base and the cover 8, and the external connection surface 29 of the base is grounded via the external substrate; therefore, the semiconductor wafers 2 and 3 can be shielded from external electromagnetic waves. In the package substrate 7, the peripheral wall 42 is perpendicular to the extension portion 43 disposed between the base portion 41 for fixing the semiconductor wafers 2 and 3 and the edge 53 of the cover 8, and the terminals 12 to 14 The inner connecting surfaces 21 to 23 and the inner connecting surface 25 of the base 11 are exposed in the holes 45 formed in the wider portion 44 of the peripheral wall 42; therefore, the peripheral wall 42 resists the grain bonds 46 and conducts electricity. The adhesive 56 is prevented from overflowing through the peripheral wall 42 toward the holes 45. This allows the wafer mounting regions of the substrate portion 41 to be positioned close to the inner connecting surfaces 21 to 23 and 25; thus, the entire area of the semiconductor device 1 can be reduced. 134421.doc 16 201003876

此外,端子12至14之内部連接表面21至23與基台u之内 部連接表面25係在形成於周邊壁42之較寬部分料内的該等 孔45内側曝露;該蓋子係以邊緣53係在周邊壁42外面固定 至位於與基底部分41相同的平面内的延伸部分们之一方式 固定至封裝基底7 ;且引線框架5係完全形成為_平板形 狀。因而,可與部分彎曲以便形成用於蓋子之端子及連接 的習知已知引線框架相比來減小該引線框架之整體大小。 因此,可減小用於將半導體晶片丨裝設於一外部基板上 的必需區域,藉此可以一較高密度來封裝半導體裝置【而 不引起干擾該外部基板之電路。 2.第二具體實施例 接下來,將參考圖9至丨5來說明依據本發明之一第二具 體實施例之-半導體裝置97,其中與圖⑴中所示之該等 者完全相同的部分係由相同參考數字來加以指因此, 下面將不再重複其贅述。 與其中音孔54係形成於蓋子8内的第—具體實施例之半 導體裝置1相&,該第二具體實施例之半導體裝置97係設 計以在一封裝基底94内形成—音孔。圖9及Π)顯示一引線 框架|中—基台72之—主要部分73係垂直伸長以長於 用於該第-具體實施例内的引線框架5之基台W主要部 为15 ’其中用作一音孔的一下如π, / 曰札的下。P孔74係形成於基台72之主 要部分73内。 類似於該第一具體實施例之引線框架5,端子13及14係 佈置於未配備端子12的該第二具體實施例之引線框架Μ 13442J.doc •17· 201003876 配備一額外端子75,其係在垂 置處。類似於不具有任何延伸 兩個邊角處。引線框架7 1係 直方向上佈置於大約中心位 部分的端子1 3 ’端子7 5係开)士、* , 、化成為一矩形形狀,其一部分用 作一内部連接表面76。類似於兮楚 H ^ _ 蝴似於该弟一具體實施例之基台 11,基台72具有延伸部分17, τ 1刀W,同時其具有另一延伸部分 77,其係接近端子75而筆直化形狀。 基台72之背側係大幅經受半触刻(參見圖1()中所示之影 線區域)。一外部連接表面77係沿基台72之側在垂直方向 上形成於中心位置處,該側係與沿其將端子75佈置於中心 位置處之側相對。一支撐物78係形成以環繞下部孔74之背 側區域。由於基台72之主要部分73係垂直伸長,兩個支撐 物32係在寬度方向上各形成於中心位置處,且兩對支撐物 3 3係與在基台72之相對側上的該等連接一起形成。 引線框架71係經受壓製,接著將其放置於一射出金屬模 具内,如圖15中所示。在該射出金屬模具中,其直徑略微 小於引線框架71之下部孔74之直徑的一接針82在一下部模 具81上方部分突出,而用於插入接針82之末梢端的一孔料 與其直徑略微大於孔84之直徑的一柱坑85係與下部模具81 之接針82 —致地同心形成於一上部模具83内。當該等模具 8 1及83係箝制以便將接針82插入至孔84内時,一腔86係以 一圓柱形空間係由於柱坑85而形成於接針82周圍之—方式 形成於其間。 當將一熔化樹脂注入至緊密固持引線框架71的射出金屬 模具時,一模製樹脂91係與引線框架71整體形成以便以一 134421.doc -18- 201003876 曰孔92係藉由接針82形成於其基底部分々丨内,且一圓柱形 壁9 3係形成以在基底部分4 !上環繞音孔9 2之—方式形成^ =11至14中所示之封裝基底94。圓柱形壁93阻擋用於將半 導體晶片2及3接合在基底部分41上的晶粒鍵46以便防止其 溢出至音孔92内。對應地,不具有任何孔的一蓋子96(參 見圖14)係附著至封裝基底94,⑨而完全產生半導體裳置 97。類似於該第一具體實施例之蓋子8,該第二具體實施 例之蓋子96係由一導電金屬材料所組成。由於蓋子%係電 連接至引線框架71,故形成於封裝基底94與蓋子96之間的 内。卩空間係在半導體装置97中電磁屏蔽。 3 ·第三具體實施例 依據本發明之—第三具體實施例之—半導體裝置⑽係 $於该第二具體實施例之半導體裝置97來加以設計,其中 曰孔92係形成於封裝基底94内並參考圖16至18來加以說 明。 ° 、該第三具體實施例之半導體裝置_係由—封裝ι〇ι所組 =,该封裴係由蓋子96與其中使用一模製樹脂1〇5來密封 、 土口 104之引線框架103的一封裝基底1 〇2所構 成。如圖16及17中所示,模製樹脂1〇5之一圓形區域係擷 取以便形成一窗口孔1〇6 ’其中基台1〇4之一圓形區域係對 應地曝路。複數個小孔1〇7係形成以穿過基台之曝露圓 /區域彳火而形成一音孔108。一弧形壁1 09係佈置於音孔 1〇8與裝設於封裝基底102之基底部分41上的半導體晶片2 之間。 134421.doc •19- 201003876 在封裝基底102之製造中,音孔1〇8之該等小孔ι〇7係藉 由在引線框架103上的半蝕刻來加以同時形成。類似於該 等第一及第二具體實施例之引線框架5及71,該第三具髀 實施例之引線框架1〇3係經受半蝕刻,其使用具有與 108—致之小孔的一遮罩來加以執行,從而形成該等小孔 1 07。在如圖1 8中所示之模製樹脂丨〇5之射出模製中,引線 框架1 03係相對於音孔1 〇8固持於具有圓形突部i丨3的—上 部模具⑴與一下部模具112之間,從而關閉該等小孔 107。一弧形通道114係接近圓形突部113來形成於上部模 具111内。如圖16及17中所示,基台104之一圓形區域係曝 露以便形成在其内具有該等小孔107的音孔108,而弧形壁 109係形成以界定音孔1〇8之區域的大約一半。如類似於形 成於該第二具體實施例之封裝基底71内的圓柱形壁,弧 形壁109可重新成形成一圓柱形形狀。 以上結構允許藉由形成該製造方法之一部分的蝕刻來有 效率地形成音孔108。由於小孔1〇7係用以形成音孔1〇8且 各減少大小,可可靠地防止異物(諸如灰塵)進入封裝101之 内部空間55内,並還可降低嗓音。 本發明不一定限於以上具體實施例,其可以各種方式來 加以修改。 以上具體實施例係針對適應麥克風封裝之半導體裝置; 但此並非—限制。可將本發明應用於其他類型的感測器 (除麥克風外)’諸如石英振盪器、高頻SWA濾波器、雙工 益、固態影像拾取裝置及MEMS裝置(諸如加速度感測器、 134421 .doc -20- 201003876 角速度感測Is、磁感測器、壓力感測器、紅外線感測器、 微鏡面陣列、矽麥克風、矽振盪器及rf_mems開關)以及 流量感測器及風壓力感測器。麥克風需要通孔,諸如允許 内部空間與外部空間流通之音孔’而一些感測器不需要通 孔’而流量感測器需要兩個通孔。 在氣密密封及真空密封裝置之情況下,例如在將—氣密 密封裝置(諸如-石英振盪器)固定至封裝基底7之後,在一 真空密封器具(未顯示)中將蓋子8接合至封裝基底7。可在 蓋子8與具有周邊壁42與延伸部分43之封裝基底7之間確保 -充分較大接觸區域。僅内部連接表面21至23(對應於端 子12至14之表面)與基台内部連接表面係在封裝*内 «露’而封裝基底7之其他區域係使用模製樹脂6來加以 密封;因此可以一氣宗古斗忠令士』上 -在方式末後封封裝基底7與蓋子8所形 成之内部空間。因% ’依據本發明之半導體封裝可較佳地 應用於氣密密封與真空密封裝置,其内部空間以一氣密方 式並在一真空基台内加以密封,諸如石英振蓋器 波器。 “ 以上具體實施㈣各設計使得對應於該基台及端子的四 個外部連接表面係分別形成用於電源供應、輸出、增益控 制及接地之用途,而本發明之半導體裝置需要 部連接表面分別用於電源供應、輸出及接地之用途, 可形成兩個連接表面用#拉α m 接衣面用於接地之用途。端子之數目取 半導體晶片之數目與半導體晶片之半導 體裝置内的半導體晶片之數目不_定限於兩二= 134421.doc -21 - 201003876 等連接9來増加連接至外部框架1〇之端子之數 現(例如)五端子或六端子組態。 ,從而實 以上具體實施例係各設計使得該引線框架完 平坦形狀’同時藉由半触刻來形成規定高度差異(諸:: = 但此並非'約束。可藉由(例如)壓花或壓印二 成回度差異(或不規則性)。 ^ :形成形成㈣合外部連接表面的凹㈣於藉 金屬模具來形成該模製樹脂,從而形成從該模製樹脂 Γ突出的該等外部連接表面與支撐物。在此情況下,該: 加旨之背側係在一外部基板之表面上方浮動。以上具體 實知例係各⑨#使得該蓋子係經由該導電黏著劑來接合至 該封裝基底,料電接合_預先塗敷至該封裝基底之延 伸部分;但此並非一約束。可經由—黏著薄片將該蓋子固 定該封裝基底’該黏著“係附著至該封裝基底之延伸部 分。 最後,本發明不-定限於以上具體實施例及#變化例, 可在藉由隨附申請專利範圍所定義的本發明之範疇内進一 步作修改。 【圖式簡單說明】 已參考下列圖式更詳細地說明本發明之該些及其他目 的、態樣及具體實施例。 圖1係顯示用於依據本發明之一第一具體實施例之一半 導體裴置内的一引線框架之表面的一平面圖: 圖2係顯示圖1中所示之引線框架之背側的一後視圖; >3442].d〇c •22· 201003876 圖3係顯示―料基底的—透視圖,其巾_模製樹脂係 與該引線框架整體形成; 圖4係圖3中所示之封裝基底的一平面圖; 圖5係圖3中所示之封裝基底的一後視圖; 圖6係沿圖4中線B至B所載取的一縱向斷面圖,其顯示 一蓋子係施加至用於在其上裝設半導體晶片的封裝基底; 圖7係/口圖4中線c至c所截取的一縱向斷面圖,其顯示 該蓋係固定至該封裝基底; 圖8係顯示一射出金屬模具所固持之引線框架的一縱向 斷面圖; 圖9係顯示用於依據本發明之一第二具體實施例之一半 導體裝置内的一引線框架之表面的一平面圖; 圖1 〇係顯不圖9中所示之引線框架之背側的一後視圖; 圖11係顯不用於該第二具體實施例之半導體裝置内的一 封t基底之一透視圖; 圖12係圖11中所示之封裝基底的一平面圖; 圖13係圖11中所示之封裝基底的一後視圖; 圖Μ係圖i 2中線D至D所截取的一縱向斷面圖,其顯 不蓋子係固定至用於裝設半導體晶片的封裝基底; 圖15係顯不由—射出金屬模具所固持之圖9之引線框架 的一縱向斷面圖; 圖1 6係顯不依據本發明之一第三具體實施例之一半導體 裝置的一縱向斷面圖; 圖17係顯不在圖16中所示之半導體裝置之一封裝基底内 134421.doc -23- 201003876 所形成的一音孔之一放大平面圖;及。 圖1 8係顯示由一射出金屬模具所固持的圖1 6中所示之半 導體裝置之一引線框架的一縱向斷面圖。 【主要元件符號說明】 1 半導體裝置 2 麥克風晶片 3 控制晶片/電路晶片 4 封裝 5 引線框架 6 盒狀模製樹脂 7 封裝基底 8 蓋子 9 連接 10 外部框架 11 基台/表面 12 電源供應端子 13 輸出端子 14 增益端子 15 主要部分 16 延伸部分 17 延伸部分 21 内部連接表面 22 内部連接表面 23 内部連接表面 134421.doc -24- 201003876Further, the inner connecting surfaces 21 to 23 of the terminals 12 to 14 and the inner connecting surface 25 of the base u are exposed inside the holes 45 formed in the wider portion of the peripheral wall 42; the cover is tied at the edge 53 One of the extending portions fixed to the outside of the peripheral wall 42 to the same plane as the base portion 41 is fixed to the package substrate 7; and the lead frame 5 is completely formed in a flat plate shape. Thus, the overall size of the lead frame can be reduced as compared to conventionally known lead frames that are partially curved to form terminals and connections for the cover. Therefore, the necessary area for mounting the semiconductor wafer on an external substrate can be reduced, whereby the semiconductor device can be packaged at a higher density [without causing interference with the circuit of the external substrate. 2. Second Embodiment Next, a semiconductor device 97 according to a second embodiment of the present invention will be described with reference to FIGS. 9 to 5, in which the portions identical to those shown in FIG. The same reference numerals are used to refer to them, and thus the description thereof will not be repeated below. The semiconductor device 97 of the second embodiment is designed to form a sound hole in a package substrate 94, with the semiconductor device 1 of the first embodiment in which the sound hole 54 is formed in the cover 8. 9 and Π) show that a main portion 73 of a lead frame|middle-substrate 72 is vertically elongated to be longer than the main portion W of the lead frame 5 used in the first embodiment, and is 15' A sound hole is like π, / 曰 的. The P hole 74 is formed in the main portion 73 of the base 72. Similar to the lead frame 5 of the first embodiment, the terminals 13 and 14 are arranged in the lead frame of the second embodiment which is not provided with the terminal 12 Μ 13442J.doc • 17· 201003876 is equipped with an additional terminal 75, which is In the hanging place. Similar to not having any extension at both corners. The lead frame 7 1 is linearly arranged at approximately the center portion of the terminal 1 3 '. The terminal 7 5 is opened, and is formed into a rectangular shape, a portion of which serves as an internal connecting surface 76. Similar to the H H _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Shape. The back side of the base 72 is substantially subjected to half-touch (see the area of the shadow shown in Figure 1). An outer connecting surface 77 is formed at a central position in the vertical direction along the side of the base 72, the side being opposed to the side along which the terminal 75 is disposed at the center position. A support 78 is formed to surround the back side region of the lower aperture 74. Since the main portion 73 of the base 72 is vertically elongated, the two supports 32 are formed at the center positions in the width direction, and the two pairs of supports 33 are connected to the opposite sides of the base 72. Formed together. The lead frame 71 is subjected to pressing and then placed in an ejection metal mold as shown in Fig. 15. In the injection metal mold, a pin 82 having a diameter slightly smaller than the diameter of the lower hole 74 of the lead frame 71 partially protrudes above a lower mold 81, and a hole for inserting the distal end of the pin 82 is slightly smaller in diameter. A column of holes 85 larger than the diameter of the hole 84 is formed concentrically with the pin 82 of the lower mold 81 in an upper mold 83. When the dies 8 1 and 83 are clamped to insert the yoke 82 into the hole 84, a cavity 86 is formed in a cylindrical space formed around the yoke 82 by the crater 85. When a molten resin is injected into the injection metal mold that closely holds the lead frame 71, a molding resin 91 is integrally formed with the lead frame 71 so as to be formed by the pin 82 by a 134421.doc -18-201003876 boring 92. Within the base portion thereof, a cylindrical wall 983 is formed to surround the sound hole 9 2 on the base portion 4 ′ to form the package substrate 94 as shown in FIGS. The cylindrical wall 93 blocks the die bond 46 for bonding the semiconductor wafers 2 and 3 to the base portion 41 so as to prevent it from overflowing into the sound hole 92. Correspondingly, a cover 96 (see Fig. 14) without any holes is attached to the package substrates 94, 9 to completely create the semiconductor skirt 97. Similar to the cover 8 of the first embodiment, the cover 96 of the second embodiment is comprised of a conductive metal material. Since the cover % is electrically connected to the lead frame 71, it is formed between the package substrate 94 and the cover 96. The germanium space is electromagnetically shielded in the semiconductor device 97. 3. Third Embodiment In accordance with a third embodiment of the present invention, a semiconductor device (10) is designed in accordance with the semiconductor device 97 of the second embodiment, wherein a pupil 92 is formed in the package substrate 94. This will be explained with reference to Figs. 16 to 18. °, the semiconductor device of the third embodiment is made of a package, i.e., the package is sealed by a cover 96 and a molded resin 1〇5 therein, and the lead frame 103 of the earth opening 104 is used. A package substrate 1 〇 2 is formed. As shown in Figs. 16 and 17, a circular area of the molded resin 1〇5 is drawn so as to form a window hole 1〇6' in which a circular area of the base 1〇4 is correspondingly exposed. A plurality of apertures 1 〇 7 are formed to form a sound hole 108 through the exposed circle/area bonfire of the base. An arcuate wall 109 is disposed between the sound hole 1〇8 and the semiconductor wafer 2 mounted on the base portion 41 of the package substrate 102. 134421.doc • 19- 201003876 In the manufacture of the package substrate 102, the small holes ι 7 of the sound holes 1 〇 8 are simultaneously formed by half etching on the lead frame 103. Similar to the lead frames 5 and 71 of the first and second embodiments, the lead frame 1〇3 of the third embodiment is subjected to half etching, which uses a mask having a small hole with 108 The cover is implemented to form the apertures 107. In the injection molding of the molded resin crucible 5 as shown in Fig. 18, the lead frame 103 is held relative to the sound hole 1 〇 8 to the upper mold (1) having the circular projection i 丨 3 Between the molds 112, the small holes 107 are closed. An arcuate passage 114 is formed in the upper mold 111 near the circular projection 113. As shown in Figures 16 and 17, a circular area of the base 104 is exposed to form a sound hole 108 having the small holes 107 therein, and the curved wall 109 is formed to define the sound hole 1〇8. About half of the area. The arcuate wall 109 may be re-formed into a cylindrical shape as similar to the cylindrical wall formed in the package substrate 71 of the second embodiment. The above structure allows the sound hole 108 to be efficiently formed by etching which forms part of the manufacturing method. Since the small holes 1〇7 are used to form the sound holes 1〇8 and are each reduced in size, it is possible to reliably prevent foreign matter such as dust from entering the inner space 55 of the package 101, and also to reduce the noise. The invention is not necessarily limited to the specific embodiments described above, which may be modified in various ways. The above specific embodiments are directed to semiconductor devices that accommodate microphone packages; however, this is not a limitation. The invention can be applied to other types of sensors (other than microphones) such as quartz oscillators, high frequency SWA filters, duplex, solid state image pickup devices, and MEMS devices (such as acceleration sensors, 134421 .doc -20- 201003876 Angular speed sensing Is, magnetic sensor, pressure sensor, infrared sensor, micro mirror array, xenon microphone, xenon oscillator and rf_mems switch) as well as flow sensor and wind pressure sensor. The microphone requires a through hole, such as a sound hole that allows the internal space to circulate with the external space, while some sensors do not require a through hole and the flow sensor requires two through holes. In the case of a hermetic seal and vacuum seal, for example after attaching a hermetic seal such as a quartz oscillator to the package substrate 7, the cover 8 is bonded to the package in a vacuum seal (not shown) Substrate 7. A sufficiently large contact area can be ensured between the cover 8 and the package substrate 7 having the peripheral wall 42 and the extension 43. Only the inner connecting surfaces 21 to 23 (corresponding to the surfaces of the terminals 12 to 14) and the inner connecting surface of the base are in the package * and the other areas of the package substrate 7 are sealed using the molding resin 6; The first space formed by the encapsulation base 7 and the cover 8 is sealed at the end of the mode. The semiconductor package according to the present invention is preferably applied to a hermetic sealing and vacuum sealing device, the inner space of which is sealed in a gas-tight manner and in a vacuum substrate, such as a quartz vibrating filter. The above embodiments (4) are designed such that four external connection surfaces corresponding to the base and the terminals are respectively used for power supply, output, gain control, and grounding, and the semiconductor device of the present invention requires a connection surface for each of the components. For the purpose of power supply, output and grounding, two connection surfaces can be formed for the purpose of grounding with the #拉αm junction. The number of terminals is the number of semiconductor wafers and the number of semiconductor wafers in the semiconductor device of the semiconductor wafer. Not limited to two two = 134421.doc -21 - 201003876, etc. The connection 9 is added to the number of terminals connected to the external frame 1 (for example) five-terminal or six-terminal configuration, so that the above specific embodiments are Designed to make the lead frame complete in a flat shape' while forming a specified height difference by semi-touching (the:: = but this is not a 'constraint.) by (for example) embossing or embossing two degrees of difference (or not Regularity. ^ : forming a concave (four) forming a (four) outer connecting surface to form the molding resin by means of a metal mold, thereby forming a protrusion protruding from the molded resin The external connection surface and the support are in this case. In this case, the back side of the purpose is floating above the surface of an external substrate. The above specific embodiment is such that each cover is bonded via the conductive adhesive. To the package substrate, the electrical bonding is pre-applied to the extended portion of the package substrate; however, this is not a constraint. The cover can be fixed to the package substrate via an adhesive sheet. The adhesive is attached to the extension of the package substrate. In the meantime, the present invention is not limited to the above specific embodiments and the modifications, and may be further modified within the scope of the invention defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS These and other objects, aspects and embodiments of the present invention are described in more detail. Figure 1 is a diagram showing the surface of a lead frame for use in a semiconductor device in accordance with a first embodiment of the present invention. A plan view: Fig. 2 is a rear view showing the back side of the lead frame shown in Fig. 1; >3442].d〇c •22· 201003876 Fig. 3 is a perspective view showing the material substrate. Figure 4 is a plan view of the package substrate shown in Figure 3; Figure 5 is a rear view of the package substrate shown in Figure 3; Figure 6 is along Figure 4. A longitudinal cross-sectional view taken from the center line B to B, showing a cover applied to the package substrate on which the semiconductor wafer is mounted; FIG. 7 is a line taken from line c to c of FIG. A longitudinal sectional view showing the cover attached to the package substrate; FIG. 8 is a longitudinal sectional view showing a lead frame held by an injection mold; FIG. 9 is a view showing a second embodiment according to the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A plan view of a surface of a lead frame in a semiconductor device; FIG. 1 is a rear view of the back side of the lead frame shown in FIG. 9; FIG. 11 is not used for the second specific Figure 1 is a plan view of a package substrate shown in Figure 11; Figure 13 is a rear view of the package substrate shown in Figure 11; Figure 1 is a longitudinal section of the line D to D, which is not fixed by the cover. FIG. 15 is a longitudinal sectional view of the lead frame of FIG. 9 which is not held by the injection metal mold; FIG. 16 shows a third embodiment according to the present invention. A longitudinal sectional view of one of the semiconductor devices; and FIG. 17 is an enlarged plan view showing an acoustic hole formed by 134421.doc -23-201003876 which is not in the package substrate of the semiconductor device shown in FIG. 16; Fig. 18 is a longitudinal sectional view showing a lead frame of a semiconductor device shown in Fig. 16 held by an injection metal mold. [Main component symbol description] 1 Semiconductor device 2 Microphone chip 3 Control chip/circuit wafer 4 Package 5 Lead frame 6 Box molding resin 7 Package substrate 8 Cover 9 Connection 10 External frame 11 Abutment/surface 12 Power supply terminal 13 Output Terminal 14 Gain terminal 15 Main portion 16 Extension portion 17 Extension portion 21 Internal connection surface 22 Internal connection surface 23 Internal connection surface 134421.doc -24- 201003876

24 較低表面 25 内部連接表面 26 外部連接表面 27 外部連接表面 28 外部連接表面 29 外部連接表面 30 延伸部分 31 延伸部分 32 支撐物 33 支撐物 34 支撐物 41 基底部分 42 周邊壁 43 延伸部分 44 較寬部分 45 孔 46 晶粒鍵 47 接合線 51 頂部部分 52 側壁 53 邊緣 54 音孔 55 内部空間 56 導電黏著劑 134421.doc -25- 201003876 61 上部模具 62 下部模具 63 腔 71 引線框架 72 基台 73 主要部分 74 下部孔 75 端子 76 内部連接表面 77 延伸部分/外部連接表面 78 支撐物 81 下部模具 82 接針 83 上部模具 84 子L 85 柱坑 86 腔 91 模製樹脂 92 音孔 93 圓柱形壁 94 封裝基底 96 蓋子 97 半導體裝置 100 半導體裝置 .doc -26- 201003876 101 102 103 104 105 106 107 108 f \ 109 111 112 11324 Lower surface 25 Internal connection surface 26 External connection surface 27 External connection surface 28 External connection surface 29 External connection surface 30 Extension portion 31 Extension portion 32 Support 33 Support 34 Support 41 Base portion 42 Peripheral wall 43 Extension portion 44 Wide section 45 hole 46 Die key 47 Bonding wire 51 Top part 52 Side wall 53 Edge 54 Sound hole 55 Internal space 56 Conductive adhesive 134421.doc -25- 201003876 61 Upper mold 62 Lower mold 63 Cavity 71 Lead frame 72 Abutment 73 Main section 74 Lower hole 75 Terminal 76 Internal connection surface 77 Extension/external connection surface 78 Support 81 Lower mold 82 Connector 83 Upper mold 84 Sub L 85 Pillar 86 Cavity 91 Molded resin 92 Sound hole 93 Cylindrical wall 94 Package Substrate 96 Cover 97 Semiconductor Device 100 Semiconductor Device.doc -26- 201003876 101 102 103 104 105 106 107 108 f \ 109 111 112 113

A 封裝 封裝基底 引線框架 基台 模製樹脂 窗口孔 小孔 音孔 弧形壁 上部模具 下部模具 圓形突部 區域A Package Package base Lead frame Abutment Molded resin Window hole Small hole Sound hole Curved wall Upper mold Lower mold Round protrusion Area

134421.doc134421.doc

Claims (1)

201003876 七、申請專利範圍: 1. 一種引線框架,其係嵌入一盒狀模製樹脂内;該盒狀楔 製樹脂包括:一底部部分;一周邊壁,其係佈置於該基 底部分之一周邊上;及一延伸部分,其係在該周邊壁外 面從該基底部分之該周邊延伸,該引線框架包含: 一基台,其係嵌入於該模製樹脂之該基底部分内,其 中該基台之一延伸部分係在該模製樹脂之該延伸部分内 延伸;以及201003876 VII. Patent application scope: 1. A lead frame embedded in a box-shaped molding resin; the box-shaped wedge resin comprises: a bottom portion; a peripheral wall disposed around one of the base portions And an extension portion extending from the periphery of the base portion outside the peripheral wall, the lead frame comprising: a base embedded in the base portion of the molding resin, wherein the base One of the extension portions extends within the extended portion of the molded resin; 複數個端子,其係接近該基台而形成並結合該模製樹 脂之該周邊壁與該延伸部分而彼此遠離; 其中該基台之-表面之一規定部分結合該周邊壁用作 一内部連接表面,而該等端子之表面之規定部分結合該 周邊壁用作内部連接表面; 其中該等端子之該等表面之其他部分結合該模製樹脂 ,該延伸部分用作較低表面,其係在一厚度方向上低於 5玄基台之該表面。 2. 3. 4. 如請求们之引線框架,其中該基台之該延伸部分係結 合該模製樹脂之該延伸部分而延伸。 °:請求項i之引線框架,其中一外部連接表面係形成以二κ基口之内錢接表面垂直相對的-位置處從該 〇之H突出’且複數個外部連接表面係形成以在 與該等端子之該以料接表面垂直相對的 等端子之複數個㈣以。 如请求項3之引線框架’其進一步包含複數個支撐物, 134421.doc 201003876 高度從該基台之該背 其以與該等外部連接表面相同的一 側突出。 5 · 一種封褒基底,其包含: 引線框架,其包括一基台與複數個端子丨以及 一模製樹脂’其包括:—底部部分;-周邊壁,其係 佈置於該基底部分之_ L . T7 政丨刀之周邊上,及一延伸部分,其係在 該周邊壁外面從該基底部分之該周邊延伸; 其中該基台係嵌入於該模製樹腊之該基底部分内,該 基台之-延伸部分係在該模製樹脂之該延伸部分上延伸 並曝露’且複數個端子係接近該基台而形成並結合該模 製樹脂之該周邊壁與該延伸部分而彼此遠離,· 其中該基台之-表面之一規定部分結合該周邊壁用作 内錢接表面,而該等端子之表面之規定部分結合該 周邊壁用作内部連接表面; 其中該等端子之該等表面之其他部分結合該模製樹脂 之該延伸部分用作較低表面,其係在—厚度方向上低於 該基台之該表面; 其中複數個孔係形成於該模製樹脂之該周邊壁内以便 曝露該基台之㈣部連接表面與料端子之料内部連 接表面。 士叫求項5之封裝基底’其中一外部連接表面係形成以 在^該基台之該内料接表面垂直相對的—位置處從該 基台背側突出,且複數個外部連接表面係形成以在 >、4等碥子之s亥等内部連接表面垂直相對的位置處從該 134421.doc 201003876 等端子之複數個背側突出,且其中該基台之該外部連接 表面與該等端子之該等外部連接表面係在該模製樹脂之 一背側上曝露。 7. 如請求項6之封裝基底,其進一步包含複數個支撐物, 其使用與該等外部連接表面相同的一高度從該基台之該 背側突出,使得該等支撐物與該等外部連接表面係在該 模製樹脂之一背側上曝露。 8. 一種封裝,其包含: Γ.' 1 一封裝基底,其由以下所構成: 一引線框架,其包括一基台與複數個端子;及 一模製樹脂,其包括:一底部部分;一周邊壁,其 係佈置於該基底部分之一周邊上;及一延伸部分,其係 在該周邊壁外面從該基底部分之該周邊延伸;以及 由一導電材料所組成的一蓋子,其係與該封裝基底裝 配以便以其一周邊部分係電連接至該封裝基底之該模製 樹脂之該延伸部分之一方式覆蓋該周邊壁所環繞之一内 部空間; 其中該基台係嵌入於該模製樹脂之該基底部分内,該 基台之一延伸部分係在該模製樹脂之該延伸部分上延伸 - 並曝露,且複數個端子係接近該基台而形成並結合該模 製樹脂之該周邊壁與該延伸部分而彼此遠離; 其中該基台之一表面之一規定部分結合該周邊壁用作 一内部連接表面,而該等端子之表面之規定部分結合該 周邊壁用作内部連接表面; 134421.doc 201003876 其中該等端子之該等表面之其他部分結合該模製樹脂 之該延伸部分用作較低表面,其係在一厚度方向上低^ 該基台之該表面; 其中複數個孔係形成於該模製樹脂之該周邊壁内以便 曝露該基台之該内部連接表面與該等端子之該等内部連 接表面。 9·如請求項8之封裝,其中一外部連接表面係形成以在與 該基台之該内部連接表面垂直相對的—位置處從該基台 之-背側突出’且複數個外部連接表面係形成以在盘該 等端子之該等内部連接表面垂直相對的位置處從該等端 子之複數個背側突出,且其中該其二 六1r邊暴台之,亥外部連接表面 與該等端子之該等外部遠拔矣& &心 < /子。丨連接表面係在該模製樹脂之一背 側上曝露。 瓜如請求項9之封裝,其進一步包含複數個支樓物其以 與該等外部連接表面相同的—高度從該基台之該背側突 出’使得該等支擇物與該等外Α 寻卜。卩連接表面係在該模製樹 脂之一背側上曝露。 11 .一種半導體裝置,其包含: 一半導體晶片; 一封裝基底,其由以下所構成: 一弓I線框架,其包括—基台與複數個端子;及 ,&裏樹脂’其包括:-底部部分;一周邊壁,其 係佈置於該基底部分之_用、嘉 、 刀之周邊上;及一延伸部分,苴在 從該周邊壁外面從哕其在却八 ㈣基底部分之該周邊延伸,·以及 134421.doc 201003876 由-導電材料所組成的一蓋子,其係與該封裝基底裝 配以便以其—周邊部分係電連接至言亥封裝基底之該模製 樹脂之該延伸部分之一方式覆蓋該周邊壁所環繞之一内 部空間;a plurality of terminals adjacent to the base and formed by the peripheral wall of the molding resin and the extending portion away from each other; wherein a portion of the surface of the base is combined with the peripheral wall to serve as an internal connection a surface, and a defined portion of the surface of the terminals is used in conjunction with the peripheral wall as an internal connecting surface; wherein other portions of the surfaces of the terminals are bonded to the molding resin, the extended portion serving as a lower surface, which is attached A surface in the thickness direction is lower than the surface of the 5 mystery abutment. 2. 3. 4. A lead frame as claimed, wherein the extension of the abutment extends in conjunction with the extension of the molding resin. °: a lead frame of claim i, wherein an external connection surface is formed such that a surface of the two κ bases is vertically opposed to each other at a position where a position protrudes from the H of the ' and a plurality of external connection surfaces are formed to The plurality of terminals (four) of the terminals of the terminals are perpendicularly opposed to each other. The lead frame of claim 3, which further comprises a plurality of supports, 134421.doc 201003876 has a height from which the back of the base protrudes on the same side as the outer connecting surfaces. 5 . A sealing substrate comprising: a lead frame comprising a base and a plurality of terminal turns and a molded resin comprising: a bottom portion; a peripheral wall disposed on the base portion _ L a periphery of the T7 plaque, and an extension portion extending from the periphery of the base portion outside the peripheral wall; wherein the base is embedded in the base portion of the molded tree wax, the base And extending the portion of the molded resin to the exposed portion and exposing the plurality of terminals to the base to form and bonding the peripheral wall of the molding resin and the extending portion away from each other, Wherein a predetermined portion of the surface of the abutment is used in conjunction with the peripheral wall as an inner surface, and a predetermined portion of the surface of the terminal is used in conjunction with the peripheral wall as an internal connecting surface; wherein the surfaces of the terminals The other portion is combined with the extended portion of the molding resin to serve as a lower surface which is lower than the surface of the base in the thickness direction; wherein a plurality of holes are formed in the periphery of the molding resin So that the base of (iv) exposing the inner surface of the connection portion of the feeding terminal connecting material surface. The package substrate of claim 5 is formed such that an external connection surface is formed to protrude from the back side of the base at a position where the inner surface of the base is vertically opposed, and a plurality of external connection surfaces are formed. And protruding from a plurality of back sides of the terminal such as 134421.doc 201003876 at positions vertically opposite to the internal connection surface such as shai, such as &, 4, etc., and wherein the external connection surface of the base and the terminals The outer connecting surfaces are exposed on the back side of one of the molding resins. 7. The package substrate of claim 6, further comprising a plurality of supports protruding from the back side of the base using the same height as the external connection surfaces such that the supports are connected to the outer portions The surface is exposed on the back side of one of the molded resins. 8. A package comprising: a package substrate comprising: a lead frame comprising a base and a plurality of terminals; and a molded resin comprising: a bottom portion; a peripheral wall disposed on a periphery of one of the base portions; and an extended portion extending from the periphery of the base portion outside the peripheral wall; and a cover composed of a conductive material The package substrate is assembled to cover an inner space surrounded by the peripheral wall in such a manner that a peripheral portion thereof is electrically connected to one of the extended portions of the molding resin of the package substrate; wherein the base is embedded in the molding In the base portion of the resin, an extension portion of the base extends over the extended portion of the molded resin - and is exposed, and a plurality of terminals are formed adjacent to the base and bonded to the periphery of the molded resin The wall and the extending portion are away from each other; wherein one of the surfaces of one of the surfaces of the base is combined with the peripheral wall to serve as an internal connecting surface, and a predetermined portion of the surface of the terminal The peripheral wall is used as an internal connecting surface; 134421.doc 201003876 wherein the other portions of the surfaces of the terminals are combined with the extended portion of the molding resin for use as a lower surface, which is low in a thickness direction The surface of the abutment; wherein a plurality of holes are formed in the peripheral wall of the molding resin to expose the inner connecting surface of the base and the inner connecting surfaces of the terminals. 9. The package of claim 8, wherein an outer connecting surface is formed to protrude from the back side of the base at a position perpendicular to the inner connecting surface of the base and a plurality of external connecting surface systems Forming to protrude from a plurality of back sides of the terminals at positions where the internal connection surfaces of the terminals of the disk are vertically opposed, and wherein the hexagram is violent, and the external connection surface and the terminals are These external 矣 矣 && heart < / son. The crucible joining surface is exposed on the back side of one of the molding resins. The package of claim 9, further comprising a plurality of branches that are identical to the outer connecting surfaces - the height protruding from the back side of the base such that the objects and the outer look Bu. The crucible joining surface is exposed on the back side of one of the molded resins. 11. A semiconductor device comprising: a semiconductor wafer; a package substrate comprising: a bow I-line frame comprising: a base and a plurality of terminals; and, & resin comprising: a bottom portion; a peripheral wall disposed on the periphery of the base portion, and a portion extending from the outer periphery of the peripheral wall from the periphery of the base portion of the octagonal portion And 134421.doc 201003876 a cover consisting of a conductive material that is assembled with the package substrate so as to be covered by one of the extended portions of the molding resin whose peripheral portion is electrically connected to the chassis package substrate An inner space surrounded by the peripheral wall; 其中該基台係嵌入於該模製樹脂之該基底部分内, 該基台之一延伸部分係在該模製樹脂之該延伸部分上延 伸並曝露,且複數個端子係接近該基台而形成並結合該 模製樹脂之該周邊壁與該延伸部分而彼此遠離; 其中該基台之一表面之一規定部分結合該周邊壁用 作一内部連接表面,而該等端子之表面之規定部分結合 該周邊壁用作内部連接表面; 其中該等端子之該等表面之其他部分結合該模製樹 脂之該延伸部分用作較低表面,其係在一厚度方向上低 於該基台之該表面; 其中複數個孔係形成於該模製樹脂之該周邊壁内以 便曝露該基台之該内部連接表面與該等端子之該等内名 連接表面,使得該半導體晶片係裝設於該基台上並經^ 該周邊壁之該等孔來電連接至該基台之該内部連接表合 與該等端子之該等内部連接表面。 12‘如請求項n之半導體裝置’其中―外部連接表面係形 以在與該基台之該内部連接表面垂直相對的一位置處 該基台之一背側突出,且複數個外部連接表面係形2 在與該等端子之該等内部連接表面垂直相對的位置處 該等端子之複數個背側突出,且其中該基台之該外部 13442】.doc 201003876 面係在該模製樹脂 接表面與該等端子之該等外部連接表 之一背側上曝露。 13. 如請求項丨2之半導體裝置, 其進—步包含複數個支擇 物’其使用與該等外部連 迷接表面相同的一高度從該基二 之該背側突出,使得該等支樘 ° * 足撐物與该等外部連接表面係 在該模製樹脂之一背側上曝露。 ’' 14. 一種麥克風封裝,其包含: 一麥克風晶片; 一封裝基底,其由以下所構成: 一引線框架,其包括-基台與複數個端子;及 -模製樹脂’其包括:—底部部分;一周邊壁,其 係佈置於該基底部分之—周邊上;及—延伸部分,其係 在該周邊壁外面從該基底部分之該周邊延伸;以及 由一導電材料所組成的一蓋子,其係與該封裝基底裝 配以便以其-周邊料係電連接至該封裝基底之該模製 樹脂之該延伸部分之一方式覆蓋該周邊壁所環繞之一内 部空間; 其中該基台係嵌入於該模製樹脂之該基底部分内,該 基台之一延伸部分係在該模製樹脂之該延伸部分上延伸 並曝露,且複數個端子係接近該基台而形成並結合該模 製樹脂之該周邊壁與該延伸部分而彼此遠離; 其中該基台之一表面之一規定部分結合該周邊壁用作 一内部連接表面,而該等端子之表面之規定部分結合該 周邊壁用作内部連接表面; I3442J.doc • 6 · 201003876 其中该等端子之該等表面之其他部分結合該模製樹脂 之該延伸部分料較低表面,其係在—厚度方向上低於 該基台之該表面; 其中複數個孔係形成於該模製樹脂之該周邊壁内以便 曝露該基台之該内部連接表面與該等端子之該等内部連 接表面’使得該半導體晶#係1設於絲台上並經由該 周邊壁之d等孔來電連接至該基台之該内部連接表面與 該等端子之該等内部連接表面; ^ 其中與内部空間連通的—音孔係形成於該蓋子或該封 裝基底内。 15. 16. 17. 如請求項14之麥克風封裝,其卜外部連接表面係形成 乂在與》亥基口之6亥内部連接表面垂直相對的一位置處從 §亥基台之—背側突出,且複數個外部連接表面係形成以 在與該等端子之料内料接表面垂直相對的位置處從 該等端子之複數個背側突出,且其巾該基台之該外部連 接表面與料料之料外料接表面係在㈣製樹脂 之一背側上曝露。 如請求項15之麥克風封裝,纟進-步包含複數個支樓 物其以與5亥等外部連接表面相同的一高度從該基台之 4㈣突出’使得料切物與料外部連接表面係在 邊模製樹脂之一背側上曝露。 ^請求項U之麥克風封裝,其中共同用作該音孔的複數 固小孔係形成於經由形成於該模製樹脂内的—窗口孔而 曝露的該基台之一曝露區域内。 134421.docWherein the base is embedded in the base portion of the molding resin, an extension portion of the base extends over the extended portion of the molding resin and is exposed, and a plurality of terminals are formed adjacent to the base. And the peripheral wall of the molding resin is separated from the extending portion; wherein a predetermined portion of one surface of the base is combined with the peripheral wall to serve as an internal connecting surface, and a predetermined portion of the surface of the terminal is combined The peripheral wall serves as an internal connection surface; wherein the other portions of the surfaces of the terminals are bonded to the extended portion of the molding resin for use as a lower surface that is lower than the surface of the abutment in a thickness direction Wherein a plurality of holes are formed in the peripheral wall of the molding resin to expose the inner connecting surface of the base and the inner name connecting surfaces of the terminals, so that the semiconductor wafer is mounted on the base The internal connections of the peripheral walls of the peripheral wall are electrically connected to the internal connection surfaces of the terminals and the internal connection surfaces of the terminals. 12' The semiconductor device of claim n wherein the outer connecting surface is shaped to protrude from the back side of one of the substations at a position perpendicular to the inner connecting surface of the submount, and the plurality of external connecting surfaces are The plurality of back sides of the terminals protrude at positions perpendicular to the internal connecting surfaces of the terminals, and wherein the outer portion 13442 of the base is attached to the molded resin joint surface It is exposed on the back side of one of the external connection tables of the terminals. 13. The semiconductor device of claim 2, further comprising a plurality of supports' which protrude from the back side of the base 2 using a height equal to the outer connecting surface of the outer joint, such that the branches樘° * The foot support and the external connection surfaces are exposed on the back side of one of the molding resins. A microphone package comprising: a microphone wafer; a package substrate comprising: a lead frame comprising - a base and a plurality of terminals; and - a molding resin comprising: - a bottom a portion; a peripheral wall disposed on a periphery of the base portion; and an extension portion extending from the periphery of the base portion outside the peripheral wall; and a cover composed of a conductive material, And the package substrate is assembled to cover an inner space surrounded by the peripheral wall with one of the extended portions of the molding resin electrically connected to the package substrate; wherein the base is embedded in In the base portion of the molding resin, an extension portion of the base extends over the extended portion of the molding resin and is exposed, and a plurality of terminals are formed adjacent to the base and bonded to the molding resin. The peripheral wall and the extending portion are away from each other; wherein one of the surfaces of one of the bases is combined with the peripheral wall to serve as an internal connecting surface, and the terminals are The specified portion of the surface is combined with the peripheral wall for use as an internal connecting surface; I3442J.doc • 6 · 201003876 wherein the other portions of the surfaces of the terminals are bonded to the lower surface of the extended portion of the molded resin, which is attached to a thickness lower than the surface of the base; wherein a plurality of holes are formed in the peripheral wall of the molding resin to expose the internal connecting surface of the base and the internal connecting surfaces of the terminals The semiconductor crystal system 1 is disposed on the wire table and is electrically connected to the inner connecting surface of the base and the inner connecting surfaces of the terminals via holes d of the peripheral wall; ^ wherein the inner space is connected to the inner space; A sound hole is formed in the cover or the package substrate. 15. 16. 17. The microphone package of claim 14 wherein the outer connecting surface is formed at a position perpendicular to the inner surface of the 6-inch internal connection of the base of the base. And a plurality of external connection surfaces are formed to protrude from a plurality of back sides of the terminals at positions perpendicular to the material receiving surfaces of the terminals, and the external connection surface of the substrate of the substrate The material external material surface of the material is exposed on the back side of one of the (4) resin. According to the microphone package of claim 15, the step-by-step includes a plurality of branches which protrude from the base 4 (four) at the same height as the external connection surface such as 5 hai, so that the material cut and the outer connecting surface of the material are attached to each other. One side of the side molding resin is exposed on the back side. The microphone package of claim U, wherein a plurality of solid small holes commonly used as the sound hole are formed in an exposed area of the base exposed through a window hole formed in the molding resin. 134421.doc
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