CN1585121A - Flip-chip packaging structure with area bumps, flip-chip substrate and flip-chip assembly - Google Patents
Flip-chip packaging structure with area bumps, flip-chip substrate and flip-chip assembly Download PDFInfo
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Abstract
Description
技术领域technical field
本发明涉及一种电学基本电器元件领域半导体器件中的覆晶封装结构、覆晶基板及覆晶组件,特别是涉及一种具有区域凸块的覆晶封装结构、覆晶基板及覆晶组件。The invention relates to a flip-chip packaging structure, a flip-chip substrate and a flip-chip assembly in semiconductor devices in the field of electrical basic electrical components, in particular to a flip-chip packaging structure with regional bumps, a flip-chip substrate and a flip-chip assembly.
背景技术Background technique
覆晶接合技术(Flip Chip Interconnect Technology)主要是利用面阵列(area array)(阵列即数组,以下均称为阵列)的排列方式,将多个焊垫(bonding pad)配置于晶片(die,晶片即芯片,以下均称为晶片)的主动表面(active surface),并在各个焊垫上形成凸块(bump),且在将晶片翻面(flip)之后,利用晶片的焊垫上的凸块分别电性(electrically)及机械性(mechanically)连接至基板(substrate)或印刷电路板(PCB)的表面所对应的接触垫(contact pad)。此外,覆晶接合技术亦可在预先形成凸块于基板或印刷电路板的表面的接触垫,接着再利用晶片的主动表面上的焊垫分别电性及机械性连接至其所对应的凸块。值得注意的是,由于覆晶接合技术可应用于高接脚数(High Pin Count)的晶片封装结构,并具有缩小封装面积及缩短讯号传输路径等多项优点,所以覆晶接合技术目前已经被广泛地应用在晶片封装领域,目前常见的应用覆晶接合技术的晶片封装结构,其包括覆晶球格阵列(Flip Chip Ball Grid Array,FC/BGA)及覆晶针格阵列(Flip Chip Pin Grid Array,FC/PGA)等型态的晶片封装结构。Flip Chip Interconnect Technology (Flip Chip Interconnect Technology) mainly uses the arrangement of area arrays (arrays are arrays, hereinafter referred to as arrays) to arrange multiple bonding pads (die, chip That is, the active surface (active surface) of the chip (hereinafter referred to as the chip) and the bumps are formed on each pad, and after the chip is turned over (flip), the bumps on the pads of the chip are used to electrically Electrically and mechanically connected to the corresponding contact pads on the surface of the substrate or printed circuit board (PCB). In addition, flip-chip bonding technology can also pre-form bumps on the contact pads on the surface of the substrate or printed circuit board, and then use the pads on the active surface of the chip to connect electrically and mechanically to the corresponding bumps. . It is worth noting that because the flip-chip bonding technology can be applied to high pin count (High Pin Count) chip packaging structures, and has many advantages such as reducing the package area and shortening the signal transmission path, the flip-chip bonding technology has been adopted at present. Widely used in the field of chip packaging, the current common chip packaging structure using flip chip bonding technology, including flip chip ball grid array (Flip Chip Ball Grid Array, FC/BGA) and flip chip pin grid array (Flip Chip Pin Grid Array, FC/PGA) and other types of chip packaging structures.
请同时参阅图1及图2所示,其中图1是现有习知的一种覆晶封装结构的俯视示意图,图2是图1中I-I剖面的剖面示意图。该现有的覆晶封装结构100,包括基板(substrate)110、晶片130、多个凸块140。如图2所示,基板110具有一基板表面112及多个接触垫(contact pad)114,而这些接触垫114是配置于基板110的基板表面112。此外,晶片130具有一主动表面(active surface)132,其中晶片130的主动表面132是泛指晶片130具有王动组件(active device)(图中未示)的一面,且晶片130更具有多个焊垫134,其配置于晶片130的主动表面132,用以作为晶片130的讯号输出入的媒介,其中这些接触垫114的位置是分别对应于这些焊垫134的位置。另外,这些凸块140则分别电性及机械性连接这些焊垫134之一至其所对应的这些接触垫114之一。最后,底胶(underfill)150是填充于基板110、晶片130及这些凸块140所共同围成的空间,用以保护接触垫114、焊垫134及这些凸块140所裸露出的部分。Please refer to FIG. 1 and FIG. 2 at the same time, wherein FIG. 1 is a schematic top view of a conventional flip-chip package structure, and FIG. 2 is a schematic cross-sectional view of the I-I section in FIG. 1 . The conventional flip-
就现有习知的覆晶接合技术而言,晶片的作为讯号(signal)、电源(power)与接地(ground)等功能的焊垫均是经由相同尺寸的球状凸块而电性连接至基板的对应的接触垫。值得注意的是,由于相同尺寸的凸块其电气效能及散热效能均已固定,若要提升晶片在封装后的电性效能及散热效能,将很难从相同尺寸的凸块来着手改善。因此,若是设计者要大幅提升晶片在封装后的电气效能与散热效能,势必要从其它方式来着手改善。As far as the conventional flip-chip bonding technology is concerned, the solder pads of the chip that function as signal (signal), power (power) and ground (ground) are all electrically connected to the substrate through spherical bumps of the same size. of the corresponding contact pad. It is worth noting that since the electrical performance and heat dissipation performance of bumps of the same size are fixed, it is difficult to improve the electrical performance and heat dissipation performance of the chip after packaging, starting from the bumps of the same size. Therefore, if the designer wants to greatly improve the electrical performance and heat dissipation performance of the chip after packaging, it is necessary to start improving it in other ways.
由此可见,上述现有的覆晶封装结构、覆晶基板及覆晶组件仍存在有诸多缺陷,而亟待加以进一步改进。为了解决现有的覆晶封装结构、覆晶基板及覆晶组件的缺陷,相关厂商莫不费尽心思来谋求解决之道,但长久以来一直未见适用的设计被发展完成,此显然是相关业者急欲解决的问题。It can be seen that the above existing flip-chip packaging structure, flip-chip substrate and flip-chip assembly still have many defects, and further improvement is urgently needed. In order to solve the defects of the existing flip-chip packaging structure, flip-chip substrate and flip-chip components, relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time. This is obviously the relevant industry urgent problem to be solved.
有鉴于上述现有的覆晶封装结构、覆晶基板及其覆晶组件所存在的缺陷,本发明人基于从事此类产品设计制造多年丰富的实务经验及其专业知识,积极加以研究创新,以期创设一种新型结构的具有区域凸块的覆晶封装结构、覆晶基板及覆晶组件,能够改进一般现有的覆晶封装结构、覆晶基板及覆晶组件,使其更具有实用性。经过不断的研究、设计,并经反复试作样品及改进后,终于创设出确具实用价值的本发明。In view of the defects in the above-mentioned existing flip-chip packaging structure, flip-chip substrate and flip-chip components, the inventor actively researches and innovates based on his rich practical experience and professional knowledge in the design and manufacture of such products for many years, in order to Creating a new type of flip-chip packaging structure, flip-chip substrate, and flip-chip assembly with regional bumps can improve the general existing flip-chip packaging structure, flip-chip substrate, and flip-chip assembly, making it more practical. Through continuous research, design, and after repeated trial samples and improvements, the present invention with practical value is finally created.
发明内容Contents of the invention
本发明的主要目的在于,克服上述现有的覆晶封装结构、覆晶基板及覆晶组件存在的缺陷,而提供一种新的具有区域凸块的覆晶封装结构,所要解决的主要技术问题是使其可以依照晶片的电性上的各种特殊要求,将凸块在横向上设计成任意的形状,而可提升晶片在封装后的电气效能及散热效能,更加适于实用,且具有产业上的利用价值。The main purpose of the present invention is to overcome the defects of the above-mentioned existing flip-chip packaging structure, flip-chip substrate and flip-chip assembly, and provide a new flip-chip packaging structure with regional bumps. The main technical problems to be solved It is to make it possible to design the bumps in any shape in the lateral direction according to various special requirements on the electrical properties of the chip, so as to improve the electrical performance and heat dissipation performance of the chip after packaging, which is more suitable for practical use and has industrial advantages. on the use value.
本发明的另一目的在于,提供一种覆晶基板,所要解决的技术问题是使其可以依照晶片的电性上的各种特殊要求,将凸块在横向上设计成任意的形状,而可提升晶片在封装后的电气效能及散热效能,从而更加适于实用,且具有产业上的利用价值。Another object of the present invention is to provide a flip-chip substrate. The technical problem to be solved is that the bumps can be designed in any shape in the lateral direction according to various special requirements on the electrical properties of the chip, and the The electrical performance and heat dissipation performance of the chip after packaging are improved, so that it is more suitable for practical use and has industrial utilization value.
本发明的再一目的在于,提供一种覆晶组件,所要解决的技术问题是使其可以依照晶片的电性上的各种特殊要求,将凸块在横向上设计成任意的形状,而可提升晶片在封装后的电气效能及散热效能,更加适于实用,且具有产业上的利用价值。Another object of the present invention is to provide a flip-chip component. The technical problem to be solved is that the bump can be designed in any shape in the lateral direction according to various special requirements on the electrical properties of the chip, and the Improving the electrical performance and heat dissipation performance of the chip after packaging is more suitable for practical use and has industrial utilization value.
本发明的目的及解决其主要技术问题是采用以下的技术方案来实现的。依据本发明提出的一种具有区域凸块的覆晶封装结构,其包括:一基板,具有一第一表面、复数个第一接触垫及至少一第二接触垫,其中该第二接触垫的面积是大于该些第一接触垫的个别的面积;至少一晶片,具有一主动表面、复数个第一焊垫及至少一第二焊垫,其中该第二焊垫的面积是大于该些第一焊垫的个别的面积;复数个第一凸块,分别连接该些第一焊垫之一至其所对应的该些第一接触垫之一;以及至少一第二凸块,连接该第二焊垫至该第二接触垫,其中该第二凸块的尺寸是大于该些第一凸块的个别的尺寸。The purpose of the present invention and the solution to its main technical problems are achieved by adopting the following technical solutions. According to the present invention, a flip-chip packaging structure with regional bumps includes: a substrate with a first surface, a plurality of first contact pads and at least one second contact pad, wherein the second contact pad The area is larger than the individual areas of the first contact pads; at least one chip has an active surface, a plurality of first pads and at least one second pad, wherein the area of the second pad is larger than the area of the first pads An individual area of a pad; a plurality of first bumps, respectively connecting one of the first pads to one of the corresponding first contact pads; and at least one second bump, connecting the second Welding pads to the second contact pads, wherein the size of the second bump is larger than individual sizes of the first bumps.
本发明的目的及解决其技术问题还可以采用以下的技术措施来进一步实现。The purpose of the present invention and the solution to its technical problems can also be further realized by adopting the following technical measures.
前述的具有区域凸块的覆晶封装结构,其中所述的第二凸块的尺寸是双倍于该些第一凸块的个别的尺寸。In the aforementioned flip-chip package structure with area bumps, the size of the second bumps is twice the individual size of the first bumps.
前述的具有区域凸块的覆晶封装结构,其中所述的该些第一凸块是位于该第二凸块的外围。In the aforementioned flip-chip package structure with area bumps, the first bumps are located on the periphery of the second bumps.
前述的具有区域凸块的覆晶封装结构,其中所述的第一焊垫是为讯号晶片焊垫、电源晶片焊垫及接地晶片焊垫其中之一。In the aforementioned flip-chip package structure with regional bumps, the first bonding pad is one of a signal chip bonding pad, a power chip bonding pad, and a ground chip bonding pad.
前述的具有区域凸块的覆晶封装结构,其中所述的第二焊垫是为电源晶片焊垫、接地晶片焊垫及特殊讯号晶片焊垫其中之一。In the aforementioned flip-chip package structure with regional bumps, the second bonding pad is one of a power chip bonding pad, a grounding chip bonding pad, and a special signal chip bonding pad.
前述的具有区域凸块的覆晶封装结构,其更包括一底胶,该底胶填充于该基板、该晶片、该些第一凸块及该第二凸块所围成的空腔。The aforesaid flip-chip package structure with regional bumps further includes a primer, and the primer is filled in the cavity surrounded by the substrate, the chip, the first bumps, and the second bumps.
本发明的目的及解决其主要技术问题还采用以下技术方案来实现。依据本发明提出的一种覆晶基板,其包括:一基板,包括一第一表面、复数个第一接触垫及至少一第二接触垫,其中该第二接触垫的面积是大于该些第一接触垫的个别的面积;复数个第一凸块,分别连接该至其所对应的该些第一接触垫之一;以及至少一第二凸块,连接至该第二接触垫,其中该第二凸块的尺寸是大于该些第一凸块的个别的尺寸。The purpose of the present invention and its main technical problems are solved by adopting the following technical solutions. A flip-chip substrate according to the present invention includes: a substrate including a first surface, a plurality of first contact pads and at least one second contact pad, wherein the area of the second contact pad is larger than that of the first contact pads. An individual area of a contact pad; a plurality of first bumps, respectively connected to one of the corresponding first contact pads; and at least one second bump, connected to the second contact pad, wherein the The size of the second bump is larger than the individual size of the first bumps.
本发明的目的及解决其技术问题还可以采用以下的技术措施来进一步实现。The purpose of the present invention and the solution to its technical problems can also be further realized by adopting the following technical measures.
前述的覆晶基板,其中所述的第二凸块的尺寸是双倍于该些第一凸块的个别的尺寸。In the aforementioned flip-chip substrate, the size of the second bumps is twice the individual size of the first bumps.
前述的覆晶基板,其中所述的该些第一凸块是位于该第二凸块的外围。In the aforementioned flip-chip substrate, the first bumps are located on the periphery of the second bumps.
本发明的目的及解决其主要技术问题还采用以下技术方案来实现。依据本发明提出的一种覆晶组件,其包括:一晶片,包括一主动表面、复数个第一焊垫及至少一第二焊垫,其中该第二焊垫的面积是大于该些第一焊垫的个别的面积;复数个第一凸块,分别连接至该些第一焊垫之一;以及至少一第二凸块,连接至该第二焊垫,其中该第二凸块的尺寸是大于该些第一凸块的个别的尺寸。The purpose of the present invention and its main technical problems are solved by adopting the following technical solutions. A flip-chip component proposed according to the present invention includes: a chip including an active surface, a plurality of first pads and at least one second pad, wherein the area of the second pad is larger than that of the first pads Individual areas of the pads; a plurality of first bumps respectively connected to one of the first pads; and at least one second bump connected to the second pad, wherein the size of the second bump is are larger than individual dimensions of the first bumps.
本发明的目的及解决其技术问题还可以采用以下的技术措施来进一步实现。The purpose of the present invention and the solution to its technical problems can also be further realized by adopting the following technical measures.
前述的覆晶组件,其中所述的第二凸块的尺寸是双倍于该些第一凸块的个别的尺寸。In the aforementioned flip-chip device, the size of the second bump is twice the individual size of the first bumps.
前述的覆晶组件,其中所述的该些第一凸块是位于该第二凸块的外围。In the aforementioned flip-chip component, the first bumps are located on the periphery of the second bumps.
本发明与现有技术相比具有明显的优点和有益效果。由以上技术方案可知,为了达到前述发明目的,本发明的主要技术内容如下:Compared with the prior art, the present invention has obvious advantages and beneficial effects. As can be seen from the above technical solutions, in order to achieve the aforementioned object of the invention, the main technical contents of the present invention are as follows:
本发明提出一种具有区域凸块的覆晶封装结构,其具有一基板、至少一晶片、多个第一凸块(一般凸块)及至少一第二凸块(区域凸块)。首先,基板具有一基板表面、多个第一接触垫及至少一第二接触垫,其中第二接触垫的面积是大于这些第一接触垫的个别的面积。此外,晶片具有一主动表面、多个第一焊垫及至少一第二焊垫,其中第二焊垫的面积是大于这些第一焊垫的个别的面积。另外,第一凸块是分别连接这些第一焊垫之一至其所对应的这些第一接触垫之一。并且,第二凸块是连接第二焊垫至第二接触垫,其中第二凸块的尺寸是大于这些第一凸块的个别的尺寸。The present invention provides a flip-chip packaging structure with regional bumps, which has a substrate, at least one chip, a plurality of first bumps (general bumps) and at least one second bump (regional bumps). Firstly, the substrate has a substrate surface, a plurality of first contact pads and at least one second contact pad, wherein the area of the second contact pad is larger than the individual areas of the first contact pads. In addition, the chip has an active surface, a plurality of first bonding pads and at least one second bonding pad, wherein the area of the second bonding pad is larger than the respective areas of the first bonding pads. In addition, the first bumps are respectively connected to one of the first pads and one of the corresponding first contact pads. Moreover, the second bump is connected to the second pad to the second contact pad, wherein the size of the second bump is larger than the individual size of the first bumps.
依照本发明的较佳实施例,其中第二凸块的尺寸是可双倍于这些第一凸块的个别的尺寸。另外,这些第一凸块是可位于第二凸块的外围,其中第一焊垫例如是讯号晶片焊垫、电源晶片焊垫或接地晶片焊垫,而第二晶片焊垫例如是电源晶片焊垫、接地晶片焊垫或特殊讯号晶片焊垫。再者,更将一底胶填充于晶片、这些第一凸块、第二凸块及基板所围成的空间。According to a preferred embodiment of the present invention, the size of the second bumps is double the individual size of the first bumps. In addition, these first bumps can be located on the periphery of the second bumps, wherein the first bonding pads are, for example, signal chip bonding pads, power chip bonding pads, or ground chip bonding pads, and the second chip bonding pads are, for example, power chip bonding pads. pads, ground chip pads, or special signal chip pads. Furthermore, a primer is filled in the space surrounded by the chip, the first bumps, the second bumps and the substrate.
因此,本发明的具有区域凸块的覆晶封装结构是藉由改变凸块在横向上的形状,使得原先同一组电源或接地的多个凸块能够整合成为凸块,故可相对增加多个凸块整合之前的面积,因而可以增加多个凸块整合之前的导电面积及散热面积,进而可以提升晶片在封装后的电性效能及散热效能。Therefore, the flip-chip packaging structure with regional bumps of the present invention changes the shape of the bumps in the lateral direction, so that multiple bumps of the same group of power supply or ground can be integrated into bumps, so that a plurality of bumps can be relatively increased. The area before bump integration can increase the conductive area and heat dissipation area before the integration of multiple bumps, thereby improving the electrical performance and heat dissipation performance of the chip after packaging.
借由上述技术方案,本发明的具有区域凸块的覆晶封装结构至少具有下列优点:With the above technical solution, the flip-chip package structure with regional bumps of the present invention has at least the following advantages:
1、本发明的具有区域凸块的覆晶封装结构,可以依照晶片的电性上的各种特殊要求,而将凸块在横向上设计成任意的形状,故可提升晶片在封装后的电气效能,使得本发明的覆晶封装结构可以适用于特殊电性需求的电子产品。1. The flip-chip packaging structure with regional bumps of the present invention can design the bumps in any shape in the lateral direction according to various special requirements on the electrical properties of the chip, so that the electrical performance of the chip after packaging can be improved. Efficiency makes the flip-chip packaging structure of the present invention applicable to electronic products with special electrical requirements.
2、本发明的具有区域凸块的覆晶封装结构,其区域凸块的尺寸较大(此是相对于一般凸块而言),故可提升增加晶片在封装后的散热效能,使得本发明的覆晶封装结构可以适用于高功率消耗的电子产品。2. In the flip-chip packaging structure with regional bumps of the present invention, the size of the regional bumps is larger (this is relative to general bumps), so the heat dissipation performance of the chip after packaging can be improved, making the present invention The flip-chip packaging structure can be applied to electronic products with high power consumption.
综上所述,本发明特殊的具有区域凸块的覆晶封装结构、覆晶基板及覆晶组件,其中,该覆晶封装结构,可以依照晶片的电性上的各种特殊要求,将凸块在横向上设计成任意的形状,而可提升晶片在封装后的电气效能及散热效能;该覆晶基板,可以依照晶片的电性上的各种特殊要求,将凸块在横向上设计成任意的形状,而可提升晶片在封装后的电气效能及散热效能;该覆晶组件,可以依照晶片的电性上的各种特殊要求,将凸块在横向上设计成任意的形状,而可提升晶片在封装后的电气效能及散热效能。其具有上述诸多优点及实用价值,在产品结构上确属创新,无论在产品结构或功能上皆有较大的改进,较现有的覆晶封装结构、覆晶基板及覆晶组件具有增进的多项功效,且在技术上有较大的进步,并产生了好用及实用的效果,具有产业的广泛利用价值,从而更加适于实用,诚为一新颖、进步、实用的新设计。To sum up, the special flip-chip package structure, flip-chip substrate and flip-chip assembly with regional bumps of the present invention, wherein, the flip-chip package structure can be bumped according to various special requirements on the chip’s electrical properties. The block is designed in any shape in the lateral direction, which can improve the electrical performance and heat dissipation performance of the chip after packaging; the flip-chip substrate can be designed according to various special requirements of the chip in the lateral direction. Any shape can improve the electrical performance and heat dissipation performance of the chip after packaging; the flip-chip component can design the bumps in any shape in the lateral direction according to various special requirements of the chip's electrical properties, and can Improve the electrical performance and heat dissipation performance of the chip after packaging. It has the above-mentioned many advantages and practical value, and it is indeed innovative in product structure. It has great improvement in both product structure and function. Compared with the existing flip-chip packaging structure, flip-chip substrate and flip-chip components, it has improved It has many functions, and has made great progress in technology, and has produced easy-to-use and practical effects. It has wide application value in the industry, so it is more suitable for practical use. It is a novel, progressive and practical new design.
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,并可依照说明书的内容予以实施,以下以本发明的较佳实施例并配合附图详细说明如后。The above description is only an overview of the technical solutions of the present invention. In order to understand the technical means of the present invention more clearly and implement them according to the contents of the description, the preferred embodiments of the present invention and accompanying drawings are described in detail below.
附图说明Description of drawings
图1是现有习知的一种覆晶封装结构的俯视示意图。FIG. 1 is a schematic top view of a conventional flip-chip package structure.
图2是图1中I-I剖面的剖面示意图。Fig. 2 is a schematic cross-sectional view of section I-I in Fig. 1 .
图3是依照本发明较佳实施例的具有区域凸块的覆晶封装结构的俯视示意图。FIG. 3 is a schematic top view of a flip-chip package structure with area bumps according to a preferred embodiment of the present invention.
图4是第3图中II-II剖面的剖面示意图。Fig. 4 is a schematic cross-sectional view of II-II section in Fig. 3 .
100:覆晶封装结构 110:基板100: Flip Chip Package Structure 110: Substrate
112:基板表面 114:接触垫112: Substrate surface 114: Contact pad
130:晶片(芯片) 132:主动表面130: wafer (chip) 132: active surface
134:焊垫 140:凸块134: Welding pad 140: Bump
150:底胶 200:覆晶封装结构150: Primer 200: Flip chip package structure
210:基板 212:基板表面210: Substrate 212: Substrate surface
214:接触垫 216:区域接触垫214: Contact pads 216: Area contact pads
230:晶片(芯片) 232:主动表面230: wafer (chip) 232: active surface
234:焊垫 236:区域焊垫234: Welding pads 236: Area welding pads
240:凸块 242:区域凸块240: bump 242: area bump
250:底胶250: primer
具体实施方式Detailed ways
以下结合附图及较佳实施例,对依据本发明提出的具有区域凸块的覆晶封装结构、覆晶基板及覆晶组件其具体结构、特征及其功效,详细说明如后。The specific structures, features and functions of the flip-chip packaging structure with regional bumps, flip-chip substrates, and flip-chip components according to the present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments.
请参阅图3、图4所示,其中图3是依照本发明较佳实施例的具有区域凸块的覆晶封装结构的俯视示意图,图4是第3图中II-II剖面的剖面示意图。本发明较佳实施例的覆晶封装结构200,包括基板210、晶片230及多个凸块,其中:Please refer to FIG. 3 and FIG. 4 , wherein FIG. 3 is a schematic top view of a flip-chip package structure with area bumps according to a preferred embodiment of the present invention, and FIG. 4 is a schematic cross-sectional view of section II-II in FIG. 3 . The flip-
该些多个凸块,包括多个第一凸块及一第二凸块,其中这些第一凸块是为一般凸块240,而第二凸块是为至少一区域凸块242。The plurality of bumps include a plurality of first bumps and a second bump, wherein the first bumps are
该基板210,如图4所示,具有一基板表面212、多个接触垫214、多个区域接触垫216,而这些接触垫214及区域接触垫216均配置于基板210的基板表面212。The
此外,该晶片230,具有一主动表面232,其中晶片230的主动表面232是泛指晶片230的具有主动组件(图中未示)的一面,并且晶片230还具有多个焊垫234及多个区域焊垫236,而这些焊垫234及这些区域焊垫236均配置于晶片230的主动表面232。其中,这些焊垫234及这些区域焊垫236的位置是分别对应于这些接触垫214及这些区域接触垫216的位置。In addition, the
另外,这些凸块240则分别电性及机械性连接这些焊垫234之一至其所对应的这些接触垫214之一,而这些区域凸块242是分别电性及机械性连接区域焊垫236至其所对应的区域接触垫216。In addition, these
请参阅图4所示,底胶250是可填充于基板210、晶片230、这些凸块240及这些区域凸块242所围成的空间,用以保护这些凸块240及这些区域凸块242所裸露出的部分,并提供适当的弹性缓冲至基板210与晶片230之间。因此,晶片230的焊垫234将可分别经由凸块240,而电性及机械性连接至基板210的接触垫214,而晶片230的区域焊垫236则可分别经由区域凸块242,而电性及机械性连接至基板210的区域接触垫216。Please refer to FIG. 4, the
请同样参阅图4所示,这些焊垫234是可作为晶片230的讯号、电源或接地的传输媒介,所以焊垫234是可为讯号晶片焊垫、电源晶片焊垫或接地晶片焊垫,而这些区域焊垫236则可作为晶片230的电源或接地的传输媒介,所以区域焊垫236是可为电源晶片焊垫或接地晶片焊垫,其中这些区域焊垫236的面积可大于这些焊垫234的个别的面积。值得注意的是,若有特殊的讯号必须利用较大的电流导通面积时,区域焊垫236亦可作为此特殊讯号的传输媒介,而为特殊讯号晶片焊垫。此外,由于区域凸块242必须提供较大的电流导通面积,所以区域凸块242的尺寸必须大于这些凸块240的个别的尺寸,且两者的尺寸甚至可以相差到两倍以上。另外,由于大部分的晶片的电路布局均将电源或接地聚集在晶片230的中央,所以这些凸块240大部分将会安排在区域凸块242的外围。Please also refer to FIG. 4, these pads 234 can be used as the signal, power or ground transmission medium of the
请继续参阅图4所示,由于现有习知的图2所示的作为电源或接地用的焊垫134,其大部分是以群组的方式安排在晶片134的主动表面132的中央,所以区域焊垫236a、236c的横向形状例如是L形,用以取代现有的原先作为电源或接地用的焊垫的分布,而区域焊垫236b的横向形状例如是长方形,同样可用以取代现有的原先作为电源或接地用的焊垫的分布。因此,区域凸块242的横向形状可以对应区域焊垫236的横向形状,而为L型或方型等形状,甚至是其它形状。此外,这些区域接触垫216的面积亦大于这些接触垫214的个别的面积,且这些接触垫214亦可对应位于区域接触垫216的外围,而区域接触垫216a、216c的横向形状例如是L形,而区域接触垫216b的横向形状例如是长方形。基于上述,区域焊垫236的横向形状是可相同于其所对应的区域接触垫216的横向形状,但是两者的面积则可以不同。Please continue to refer to shown in FIG. 4, because most of the
请同样参阅图4所示,当区域焊垫236是为电源焊垫或是接地焊垫时,由于区域焊垫236的面积较大,且其所对应的区域凸块242及区域接触垫216的面积亦相对较大,故可提供较大的电流导通面积,如此将有助于提升晶片230在封装后的电性效能。此外,由于区域接触垫216的面积较大,使得区域接触垫216的热能传导面积增加,如此将有助于提升晶片230在封装后的散热效能。Please also refer to FIG. 4 , when the area pad 236 is a power pad or a ground pad, since the area of the area pad 236 is relatively large, and the corresponding
然而,熟悉该项技术者应该知道,晶片的区域焊垫并不限定是电源焊垫或接地焊垫,对于需要较大的电流导通面积的特殊讯号而言,本发明的晶片的区域焊垫亦可作为上述的特殊讯号的焊垫,以符合晶片在设计时的电性要求。因此,区域焊垫是可为电源焊垫、接地焊垫或特殊讯号焊垫。However, those familiar with the art should know that the area pads of the chip are not limited to power pads or ground pads. For special signals that require a larger current conduction area, the area pads of the chip of the present invention It can also be used as a soldering pad for the above-mentioned special signals to meet the electrical requirements of the chip in design. Therefore, the area pads can be power pads, ground pads or special signal pads.
基于上述,本发明的具有区域凸块的覆晶封装结构,具有一基板、至少一晶片、多个第一凸块(一般凸块)及至少一第二凸块(区域凸块)。其中第二凸块是连接第二焊垫至第二接触垫,而第二凸块的尺寸是大于这些第一凸块的个别的尺寸。值得注意的是,由于第二凸块的尺寸是大于这些第一凸块的个别的尺寸,所以该覆晶封装结构将具有较佳的电气效能及散热效能。Based on the above, the flip-chip package structure with regional bumps of the present invention has a substrate, at least one chip, a plurality of first bumps (general bumps) and at least one second bump (regional bumps). Wherein the second bump is connected to the second welding pad to the second contact pad, and the size of the second bump is larger than the individual size of the first bumps. It is worth noting that since the size of the second bumps is larger than the individual sizes of the first bumps, the flip-chip package structure will have better electrical performance and heat dissipation performance.
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的结构及技术内容作出些许的更动或修饰为等同变化的等效实施例,但是凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with this field Those skilled in the art, without departing from the scope of the technical solution of the present invention, may use the structure and technical content disclosed above to make some changes or modifications to equivalent embodiments with equivalent changes, but any content that does not depart from the technical solution of the present invention, Any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention still fall within the scope of the technical solutions of the present invention.
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| US9941240B2 (en) | 2013-07-03 | 2018-04-10 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor chip scale package and manufacturing method thereof |
| CN110729266A (en) * | 2018-07-16 | 2020-01-24 | 台湾积体电路制造股份有限公司 | Bonding structure of package and manufacturing method thereof |
| CN114464540A (en) * | 2022-02-11 | 2022-05-10 | 展讯通信(上海)有限公司 | Component packaging method and component packaging structure |
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| JP2734381B2 (en) * | 1994-10-06 | 1998-03-30 | 日本電気株式会社 | Semiconductor device mounting structure and method of manufacturing the same |
| US6191487B1 (en) * | 1998-04-23 | 2001-02-20 | Minco Technology Labs, Inc. | Semiconductor and flip chip packages and method having a back-side connection |
| JP2001313309A (en) * | 2000-04-28 | 2001-11-09 | Nippon Avionics Co Ltd | Flip chip mounting method |
| WO2002017392A2 (en) * | 2000-08-24 | 2002-02-28 | Polymer Flip Chip Corporation | Polymer redistribution of flip chip bond pads |
| CN1221027C (en) * | 2001-05-21 | 2005-09-28 | 矽品精密工业股份有限公司 | Semiconductor package with heat dissipation structure |
| CN2538067Y (en) * | 2002-04-24 | 2003-02-26 | 威盛电子股份有限公司 | Flip Chip Package Substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9941240B2 (en) | 2013-07-03 | 2018-04-10 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor chip scale package and manufacturing method thereof |
| TWI631679B (en) * | 2013-07-03 | 2018-08-01 | 台灣積體電路製造股份有限公司 | Surface-mounted semiconductor component, wafer-level semiconductor package component, and surface mount method |
| CN110729266A (en) * | 2018-07-16 | 2020-01-24 | 台湾积体电路制造股份有限公司 | Bonding structure of package and manufacturing method thereof |
| CN110729266B (en) * | 2018-07-16 | 2021-06-15 | 台湾积体电路制造股份有限公司 | Bonding structure of package body and manufacturing method thereof |
| US11101190B2 (en) | 2018-07-16 | 2021-08-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package and printed circuit board attachment |
| CN114464540A (en) * | 2022-02-11 | 2022-05-10 | 展讯通信(上海)有限公司 | Component packaging method and component packaging structure |
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