[go: up one dir, main page]

CN102947976B - 可充电、高密度的电化学设备 - Google Patents

可充电、高密度的电化学设备 Download PDF

Info

Publication number
CN102947976B
CN102947976B CN201180028013.4A CN201180028013A CN102947976B CN 102947976 B CN102947976 B CN 102947976B CN 201180028013 A CN201180028013 A CN 201180028013A CN 102947976 B CN102947976 B CN 102947976B
Authority
CN
China
Prior art keywords
electrochemical device
cathode
conductivity
electrochemically active
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201180028013.4A
Other languages
English (en)
Other versions
CN102947976A (zh
Inventor
S·W·斯奈德
B·J·纽德克尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saplast Research LLC
Original Assignee
Saplast Research LLC
Infinite Power Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saplast Research LLC, Infinite Power Solutions Inc filed Critical Saplast Research LLC
Publication of CN102947976A publication Critical patent/CN102947976A/zh
Application granted granted Critical
Publication of CN102947976B publication Critical patent/CN102947976B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • H01M10/052Li-accumulators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • H01M10/056Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
    • H01M10/0561Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
    • H01M10/0562Solid materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/36Selection of substances as active materials, active masses, active liquids
    • H01M4/48Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
    • H01M4/485Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/62Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
    • H01M4/624Electric conductive fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/64Carriers or collectors
    • H01M4/66Selection of materials
    • H01M4/665Composites
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Secondary Cells (AREA)

Abstract

公开了可充电的、高密度的电化学设备。这些电化学设备可,例如,包括高能量密度,在没有任何液态或凝胶型电池组件的情况下,相比其他电池,可在给定、受限的体积中存储更多能量,且仍表现出可接受的功率或电流率容量。特定实施例可涉及,例如,除了阴极之外的所有电池组件具有较小的体积或质量,同时在正阴极内获得较高的电化学有效质量。

Description

可充电、高密度的电化学设备
相关申请
本申请要求根据35U.S.C.§119(e)在2010年6月7日提交的美国临时专利申请系列号为No.61/352,082的优先权,该申请通过引用整体结合于此。
技术领域
本发明涉及可充电、高密度的电化学设备。特定地,本发明的特定实施例涉及,例如,具有高能量密度的全固态、可充电电池,且在没有任何液态、或凝胶型电池组件的情况下,其具有在有限体积中存储更多能量的容量并仍显示出可接受的功率或电流率能力。
背景技术
通过正阴极和负阳极来界定可充电和不可充电电池的容量。在使用可基于硅或锡的金属锂阳极(如,在Li-MnO2纽扣电池中)或大容量(capacity rich)Li-离子阳极时,电池的容量受控或受限于正阴极的特定容量(用mAh/g或mAh/ccm计量)。减少所有其他电池组件的体积,这对于小电池而言是最有用的,或者减少所有其他电池组件的质量,这对于较大电池(如,在电动车中)而言是最有用的,而对于给定阴极-阳极化学,同时增加正阴极内电化学有效质量是增加能量密度(例如,用Wh/liter来计量)最有效的方法。
增加正阴极内电化学有效质量意味着减少阴极中的任何辅助相(诸如机械粘合剂(binder)、或离子或电子传导增强剂(enhancer))、或使得该阴极对于给定阴极面积而言更厚。当阴极厚度变得非常大(>>20μm)时由于限制的扩散运动和相关联的受限的电流率或功率容量,高能量密度室温电池,诸如手机和膝上计算机电池,需要高传导、基于液态有机溶剂的锂离子电解液来刺穿这些电池的阴极。然而,液态有机溶剂的存在是这样的电池在最近二十年所经历的最多的问题的起源,问题诸如,例如,一旦分解的热逸出、或一旦遇到与热有关的故障引起的断路、一旦遇到特定电池故障模式引起的火/气味/烟/爆炸、早期电化学循环中的气体析出和压力增大、受限于300-1000次循环的充放电循环、受限的操作温度范围(在很多情况下是0°C—60°C)、以及其他。此外,约束挥发性液态有机溶剂要求特定的封装体系架构和电池封装,其经常配备有孔或阀门避免在早期电化学循环过程中的电池过压。
在这个行业中需要具有更高能量密度的电池。特定地,存在对于全固态可充电电池的需要,其没有用于在有限体积中存储更多能量的任何液态或凝胶型电池组件,仍然显示出可接受的功率和/或电流率能力。这导致更安全的电池且允许使用简化的封装,以及操作与存储的更高更低的温度范围。
发明概述
本发明的特定示例性实施例可包括对于给定阴极-阳极化学,具有较高能量密度的电池。如下文进一步详细讨论地,特定实施例可涉及,例如,除了阴极之外的所有电池组件具有较小的体积或质量,同时在正阴极内获得较高的电化学有效质量。
具有正复合阴极的可充电电化学设备的实施例可包括固态电化学活性材料、在电化学活性材料被初始化充电前具有的电子传导率比所述电化学活性材料的电子传导率至少高出三倍(three times higher than)的固态导电材料、和在电化学活性材料被初始化充电前具有的离子传导率比所述电化学活性材料的离子传导率至少高出三倍的固态、无机、离子传导的材料。
可选地,具有正复合阴极的可充电电化学设备的实施例可包括至少一个固态电化学活性材料、不同于该电化学活性材料的至少一个固态、离子传导的材料、且可不包含液态或胶状溶剂。
可充电电化学设备的可选实施例可包括固态正阴极、负阳极、和夹在该阴极和该阳极之间的固态电解质;其中该电化学设备包含单个电化学电池,其基于正阴极的几何占用面积(footprint)优选地具有例如,至少2mAh/cm2的额定容量。
附图说明
图1示出可被用于手机中的示例性Li-离子或Li-聚合物电池的截面图。
图2示出具有三个固相的示例性电化学设备,包括电化学活性阴极材料、离子传导率增强剂、和电子传导率增强剂。
图3示出具有两个固相的示例性电化学设备,包括电化学活性阴极材料、和电子传导率增强剂。
具体实施方式
要理解本发明不限于在此所描述的特定方法学、混合物、材料、制造技术、用途、以及应用,因为这些可有变化。还要理解本文中所使用的术语仅出于描述特定实施的目的,而不旨在限定本发明范围。必需注意到,如本文以及所附权利要求书中所使用地,单数形式的“一”、“一个”以及“该”包括复数引用,除非上下文另外明确地指出相反情况。因此,例如对“一个要素”的引用是对一个或多个要素的引用,并包括本领域内技术人员所熟知的其等效物。同样,对于另一示例,对“一个步骤”或“一个装置”的引用是对一个或多个步骤或装置的引用,并可包括子步骤或辅助性装置。所使用的所有连接词要以可能的最大涵盖方式来理解。因此,词语“或”应当理解为具有逻辑“或”的定义而非逻辑“异或”的定义,除非在上下文中另外明确指出相反情况。本文中所描述的结构应理解为也提及这种结构的功能性等效物。可解释为表示近似的语言应当如此理解,除非上下文中另外明确指出相反情况。
除非另外定义,否则在本文中所使用的所有技术和科学术语具有与本发明所属技术领域的一名普通技术人员所通常理解相同的含义。描述了优选方法、技术、装置和材料,但是在本发明的实践或测试中可使用与那些所描述的相似或等效的任何方法、技术、装置、或材料。本文中所描述的结构应理解为也提及这种结构的功能性等效物。
通过引用结合于本文中的所有专利和其它出版物出于描述和公开的目的,举例而言在这种出版物中描述的方法学可与本发明相结合而使用。在本发明的申请日之前,这些出版物单独地提供其公开内容。在这一点上不能解释为承认发明人不具备资格由于现有发明或者出于任何其它原因预料这种公开内容。
本发明的特定实施例,例如,包括全固态、高能量密度电池组,其与传统的手机电池和纽扣电池不同,不含有任何液态或胶状组件。胶状组件包括,例如,具有如此高的粘性以使它们不像常见液体那样流动的溶剂。可通过各特征的组合完成较高的能量密度,特征诸如是,例如:
1.在最大化每单元阴极面积的阴极厚度的同时,将充电和放电电流能力维持在可接受的性能极限内;
2.优化阴极内部的电化学有效质量的载荷或体积百分比,这可包括复合的而非单相电化学活性材料来构成阴极体积的100%;
3.使用包含全固态锂离子传导和电子传导增强相的合成电化学活性材料;和/或
4.最小化所有其他电池组的组件(诸如衬底、电解质、负阳极、电流集电器、和端子以及封装)的体积分数。
关于第1项,本发明的特定实施例,例如,可包括具有约100-1000μm阴极厚度的电化学设备,而手机类型电池的阴极厚度可,例如约100μm。关于第2项,示例性电化学设备可优选地使用高于约50%体积比的电化学活性材料的载荷。为了增强电池的功率和电流率能力(第1项和第3项),合成阴极的剩余例如50%的体积比可由两种材料填充:(a)锂离子传导增强材料,在制造和电池操作和存储过程中,该材料与电化学活性阴极材料是化学稳定的,同时表现出的离子传导率比电化学活性材料的离子传导率至少高出三倍;和(b)电子传导增强材料,其具有的电子传导率比电化学活性材料的电子传导率至少高出三倍。关于第4项,本发明的特定实施例的设备可被配置为,除了其他部件外,具有:(i)较薄的金属阴极电流集电器,诸如,例如10μm Al箔,其还用作任选的衬底(或如果正阴极沿其可连接正端子的外部表面具有足够的传导率,则没有这样的电流集电器);(ii)较薄的电解质,诸如,例如,1-3μm厚的Lipon;和(iii)较薄的金属阴极,诸如,例如10-50μm的金属锂。使用易于获得的Li箔,通过物理气相沉积(PVD)工艺或热压层压,第4项的一个或多个元件可被制为本发明的特定实施例的设备。最后,本发明的特定实施例的设备可,例如,使用厚度约3μm的薄膜封装来包装,如以前所公开的,例如,在美国专利申请公开No.2009/0181303中,其整体通过引用而结合至此。
在特定实施例中,在复合阴极和/或电解质中没有任何挥发性液态有机溶剂的存在可高度有益于该电化学设备的安全以及操作和存储的更高温度极限,这包括无铅回流焊情况,其中高达265°C的温度漂移可发生达若干分钟。
本发明的特定实施例的高容量电池的更低成本的版本可包括含有更厚的陶瓷层、或多层陶瓷层的电解质替代物,其可完全地或部分地通过非PVD或非化学气相沉积(CVD)法制成,诸如传统的陶瓷或湿法化学处理。
这些电解质替代物的示例可包括Li2S-SiS2或Li2S-P2S5基的玻璃电解质粉末的压缩(~100μm层厚)、Li3N-LiTi2(PO4)3双层陶瓷板(~100μm厚)、单侧Lipon保护的LiAl2Ti(PO4)3或Li0.35La0.55TiO3板(~100μm厚)或压缩的(压制的)Li7La3Zr2O12粉末(~50μm厚)。类似于复合阴极,对于本发明的特定实施例,可使用复合阳极,且复合阳极可包括陶瓷压缩的、LiySn-活性的、纳米大小的Li4Ti5O12粉末(1.5V相对Li+/Li;相比于采用金属锂阳极的那些4V电池,结果包括本发明的特定实施例的完全制造的电化学电池的1.5V伏特的减少),其中在体积不变化的LixTi5O12(4≤x≤7)阳极相中LiySn用作锂离子和电子传导增强第二相。还可采用其他复合阳极。
尽管制造固态的、具有陶瓷和/或湿法化学制造的电解质和/或阳极的高容量电池可能是具有吸引力的,但是由于这些电池的成本和制造吞吐量,,它们并不包含根据本发明的特定实施例的电池的功率和密度性能,其中根据本发明的特定实施例的电池使用薄膜电解质和完全由电池的电化学活性品类(诸如Li离子电池的金属锂)构成的金属阳极。这些较低成本的电池是较为不理想的,因为陶瓷和/或湿法化学制成的电解质和/或复合阳极一般较厚(其可增加电池电阻并对电池增加不含能量的体积,这两者均是不期望的特性)并提供了较低的电池电压(这可导致较低的能量和较低的功率,这两者均是不期望的特性)。
本发明的特定实施例的良好阴极性能(对于纯阴极和复合阴极)可要求,例如,阴极内的较高的、有效的扩散系数。阴极内的这样的扩散系数允许,一旦电池放电,尽可能多的电化学活性品类(离子和电子)在尽可能最短的时间内被插入阴极且插入最为远离扩散起源平面(是阴极-电解质界面)的阴极位置。在简化的画面中,根据如下式,可使用扩散的菲克第二定律的一维解,其中对于给定扩散系数D,在扩散周期t之后,扩散品类(diffusingspecies)的波前刺穿了本体(body)达深度X(有时称为扩散长度):
X=2(D*t)1/2 (1)
式(1)是对于离子和电子的组合的扩散的准确估算。在很多实用的电化学活性阴极材料中,电子传导率大大高于电化学活性离子的传导率。例如,充电的LixCo02(x<0.7)的电子传导率为环境温度下为约1S/cm,而锂离子的传导率为小于10-7S/cm。因此,有益的是,通过掺混入合适的锂离子传导增强材料、藉此形成阴极复合,来增强阴极的锂离子传导率。
在特定实施例中,使用离子传导率作为式(1)的确定的、独立的变量,扩散系数可由菲克扩散定律的一部分所替代,这是
D=RT/(c*z*F2*dE/dx)*j (2)
这将D相关于气体常数R、绝对温度T、扩散品类的局部浓度c、这些品类的电荷数量(charge number)z(对于Li+离子而言z=1)、法拉第常数F、局部电场强度dE/dx、和扩散品类的电流密度j。在将式(2)插入式(1)并在所得式两侧求平方后所得式为
X2=4*RT/(c*z*F2*dE/dx)*t*j (3)
其中扩散周期t还可被解释为在给定电流密度j需要来放电或充电阴极的额定容量的连续的放电或充电时间,其中额定容量与给定阴极复合的阴极的厚度X成比例,该给定阴极复合为电化学活性阴极材料、离子传导率增强材料、和电子传导率增强材料。阴极的额定容量为,例如,在完全电池充电后的环境条件下所提供的电池的放电容量。使用欧姆定律用电阻R和整个阴极上的电压E(其进而具有截面扩散面积A)将电流密度j转换为传导率G后所得式,
R=E/(j*A) (4)
且传导率G(=电阻率的逆)的定义
G=1/R*X/A (5)
j=E*G/X (6)
在将式(6)插入式(2)并考虑跨阴极的整个厚度X的电压降后所得式为
X2=4*RT/(c*z*F2*dE/dX)*t*E*G/X (7)
或,在重新排列式(7)后,
X3=4*RT/(c*z*F2*dE/dX)*t*E*G (8)
对于整个阴极上不变的电场梯度(这可能是导电良好的阴极的情况),dE/dx变成E/X,从而式(8)简化为
X2=4*RT/(c z*F2)*t*G (9)
因此,
X2~t*G (10)
式(10)可被认为是阴极的设计规则,如果,例如,对于通过电化学电池的厚度X的给定扩散周期(或放电或充电时间)t,在可努力倍增阴极的厚度X从而在其他参数不变的情况下(即,相同的电化学活性材料、电化学活性材料的相同容量负荷、阴极的相同截面积,和其他)倍增每占用面积的容量前,阴极的离子传导率G可被增加四倍。电池的放电时间容量可被给出其倒数值,所谓C-率,在数学上忽略放电之间的充电周期时,C-率定义了电池或电化学电池每隔多久(how often)能在一小时内数学地放电其额定容量。
式(10)还表示对于阴极内的给定传导率G,增加阴极厚度可导致慢得多(即,更长)的放电时间容量(更低的C-率)。例如,在倍增阴极厚度时,给定额定容量的全部放电的放电时间可大约增至四倍(C-率降至约25%)。维持给定额定容量的同时倍增阴极厚度暗示着,可通过向阴极增加电化学惰性材料、倍增其多孔性或者改变阴极内电活性材料来完成厚度增加。
式(10)进一步教导向阴极添加电化学惰性材料,诸如不存储电化学容量或能量的纯离子或电子传导率增强剂,因此仅增加了阴极厚度达ΔX,而不增加阴极的容量或能量,式(10)伴随的代价是:因此在特定实施例中,如果将(复合)阴极的离子传导率增加为G*(X+ΔX)2/X2从而维持,或甚至更佳地,缩短了放电或充电时间,则此举是合适的,因为:
(X+ΔX)2~t*G[(X+ΔX)2/X2] (11)
在特定实施例的阴极内较大的离子传导率的重要性和需要是明显的。由于电化学活性阴极材料,诸如,例如,商业可获得的LiCoO2,本身可不提供充分高的锂离子传导率(如,在从4.2V-2.0V相对Li+/Li之间的整个电化学活性范围上,在环境温度可表现出<10- 7S/cm,),例如,可用锂离子传导率增强材料(锂离子传导率基本高于电化学活性阴极材料的传导率)制造复合阴极。
在选择合适的锂离子传导增强材料后,诸如,例如钛酸镧锂(在25°C时Li0.35La0.55TiO3具有G=10-3S/cm(块状物)和G=2*10-5S/cm(晶界),其示例在Y.Inaguma等人的Solid State Communications 86(1993)689页中有讨论,该文献通过参考整体并入此处)、锆酸镧锂(在25°C时Li7La3Zr2O12表现出7.7*10-4S/cm,其示例在R.Murugan等的Angewandte ChemieInternational Edition 46(2007)7778中有讨论,该文献通过参考整体并入此处)、磷酸钛铝锂(在25°C时Li1.3Til.7A10.3(PO4)3表现出7*10-4S/cm,其示例在G.Adachi等人的U.S.Pat.No.4,985,317中有讨论,该文献通过参考整体并入此处)、或硫代磷酸锂(在25°C时80at%Li2S—20at%P2S5[=Li8P2S9;"Thio-LISICON II"]表现出7.4*10-4S/cm,其示例在Senga Minoru等人的美国专利申请公开No.2007/0160911中有讨论,该文献通过参考整体并入此处),在特定环境下是重要的,来确保锂离子传导率增强材料的形态(包括颗粒大小和颗粒大小分布)被调整为在复合引进该电化学活性阴极材料的颗粒大小和分布。这个方法可在所述复合阴极内提供锂离子传导率的正三维网络。由于欠佳的传导路径或晶粒间接触面积,复合阴极内的多孔性可能抵销具有很好传导率(应用至离子和电子)的材料的效能,传导率继而可被最大化来优化晶粒之间和整个复合阴极上的传导。这个目的可通过如下完成,对于阴极内的离子传导率增强材料和电化学活性材料二者,颗粒大小优选在约0.1-10μm范围内,且最优选为0.5-5μm。远大于10μm的颗粒可承担遮蔽或阻挡离子网络内的离子传导路径、和电子网络内的电子传导路径的风险。
可选地或附加地,可增强电化学活性材料本身的离子传导率。此举可通过,例如,将其块状晶粒(晶粒内)部分与其他、合适的化学元素混合,和/或通过化学地或机械地修改其晶界(这是固态阴极内晶粒之间的首选离子传导通路)来实现。经由与合适的化学物质反应的化学改性可以是根据本发明的特定实施例的优选方法。快速离子晶界传导在提供离子进/出位于晶粒块状物内的负责容量和能量存储的电化学反应位置是最有效的。如果在阴极内在晶粒块状物和/或晶界内的被这样增强的电化学活性材料,例如LiCoO2,表现出充分高的锂离子传导率,则仅提供添加增强的锂离子传导率的惰性相,诸如,例如钛酸镧锂(Li0.35La0.55TiO3),可能变得没有必要了。然而,可重要的是确保该阴极电子传导良好,例如,具有远高于阴极内锂离子传导率的电子传导率。否则,当应用于电子而非离子时,根据式(9),阴极的电子传导率可限制锂离子传导率的有效性,且因此仅在限制电子传导率的速度下可发生通过阴极的离子扩散。
电子传导率增强材料相对是不昂贵的,诸如例如,碳或镍粉末。使用普遍选择的电化学活性材料(如,LiCoO2)和所选择的离子传导率增强材料(诸如,例如钛酸镧锂(Li0.35La0.55TiO3)或锆酸镧锂(Li7La3Zr2O12)),这些材料相当稳定达至少500°C。根据本发明的特定实施例,优选的是使得这些电子传导率增强材料以合适的颗粒大小分布(这有助于最大化复合阴极的电子传导率)可用,最优选的是以电子传导率增强材料的最低添混容量分数可用。如果使用了较大的颗粒,诸如,50μm Ni,则这些颗粒可为复合阴极提供良好的电子传导率,但是可能不必要地移除了复合阴极内宝贵的体积,这些体积没有被填充更为重要的电化学活性阴极材料(其提供能量)和/或任选的锂离子传导率增强材料(可在那个能级增强功率容量)。
可选地或附加地,电化学活性材料本身的电子传导率可被增强。此举可通过,例如,将其块状晶粒(晶粒内)部分与其他、合适的化学元素混合,和/或通过化学地或机械地修改其晶界(这是固态阴极内晶粒之间的首选电子传导通路)来实现。经由与合适的化学物质反应的化学改性可以是根据本发明的特定实施例的优选方法。快速电子晶界传导在提供电子进/出位于晶粒块状物内的负责容量和能量存储的电化学反应位置是最有效的。如果在阴极内在晶粒块状物和/或晶界内的被这样增强的电化学活性材料,例如LiCoO2,表现出充分高的电子传导率,则在正阴极中添加基本电化学存储容量的情况下添加仅提供增强的电子传导率的惰性相,诸如,例如,镍或碳粉末,可变得没有必要。
例如,可使用高能球磨研磨(可将原始粉末碾磨至纳米/亚微米大小的颗粒)产生合适的颗粒大小和分布。可通过将应用了不同碾磨参数的分别被碾磨的粉末批次混合起来,完成对给定材料的特定颗粒大小分布。由于一种材料(如,锂离子传导率增强材料)的这样获得的粉末具有特定的颗粒大小分布,这个粉末可与具有以类似方式创建的颗粒大小分布的另一种材料(如,电化学活性阴极材料)相混合。最终,电子传导率增强材料(以与为锂离子传导率增强材料所采用的方式类似的方式制成的特定颗粒大小分布)可被添加至该粉末混合物。然后,可以各种方式实现该粉末混合物的均质化,诸如,例如,通过使用低浓度的低密度碾磨媒质(诸如Si3N4或Al2O3,这可或不可进一步改变该粉末混合物中一个或多个材料的颗粒大小分布)进行的低能球磨研磨。
本发明的示例性实施例
示例1:根据本发明的实施例,在初始化充电之前,可使用商业可获得的LiCoO2粉末,通过(a)冷压合7吨的厚度0.5mm且直径10mm的粉末小粒(此举可获得5.06g/ccm理论密度的76%),和(b)冷压合7吨的厚度0.5mm且直径10mm的粉末小粒且之后通过在空气中在900°C烧结该小粒(pellet)达1小时(此举可获得5.06g/ccm理论密度的72%),来确定环境条件下它的电子传导率。然后这样获得的小粒,在两侧小粒表面上可被涂覆0.3μm厚的、PVD制造的、锂离子阻挡的金电极,并接受使用电化学阻抗谱法和10mV幅值的电阻测量。示例性被冷压合的LiCoO2小粒的电子传导率获得2.7*10-5S/cm,而可在900°C被退火的小粒表现出7.1*10-4S/cm的电子传导率。
示例2:根据本发明的实施例,可从被冷压合的0.5mm厚且直径10mm的7吨Ni小粒中确定商业可获得的Ni粉末(2-3μm晶粒大小)的电子传导率。该密度可以是理论密度(8.91g/ccm)的80%。这样获得的Ni小粒可被夹在两个铜电极之间并经受10m VDC。然而,电阻抗可以如此低(<<1Ohm)以致电流落在测试仪器能力(10A)之外。替代确定精确的电子传导率,可通过Ni的文献值(在25°C时在约105S/cm)来近似该电子传导率。在初始化充电之前,这个值大于LiCoO2的10个数量级。
示例3:根据本发明的实施例,在初始化充电之前,可使用来自示例1的商业可获得的LiCoO2粉末,通过(a)冷压合7吨的厚度0.5mm且直径10mm的粉末小粒、和(b)冷压合7吨的厚度0.5mm且直径10mm的粉末小粒且之后通过在空气中在700℃烧结该小粒达1小时(此举可获得5.06g/ccm理论密度的73%),来确定环境条件下它的离子传导率。这样获得的小粒,在每一个小粒表面上,可被涂覆有3μm厚的电子阻挡Lipon电解质层。此外,两个金属Li电极可被PVD制造在与被夹持的LiCoO2小粒相对的Lipon电解质层上。通过对在发生锂涂镀或剥离的锂电极应用1-5VDC之间的各种电压,这个离子传导率测试单元可经受欧姆电阻测量。在这个设置中,仅锂离子可传导通过LiCoO2小粒,而其电子传导完全被阻止。所引起的瞬时电流可表现出欧姆行为且被计算到电阻中。减去串联连接的两个3μm Lipon层的已知、组合电阻(来自其他独立的试验)能在初始化充电前提取到LiCoO2的离子传导率。当在25°C测量时,示例性冷压合LiCoO2小粒和之后在空气中在700°C被退火达1小时的冷压合LiCoO2小粒二者的离子传导率均为2*10-8S/cm,这比25°C时LiCoO2的离子传导率低三个数量级。因此,在这个示例中的LiCoO2表现为主要电子传导的材料,具有欠佳的锂离子传导率。
示例4:根据本发明的实施例,通过起始化合物LiOH、La203、和TiO2的标准粉末反应,可合成Li0.35La0.55TiO3。最终粉末Li0.35La0.55TiO3,经XRD验证,可实际上没有杂质相。然后这个粉末可(a)冷压合7吨、0.4mm厚度和10mm直径粉末小粒(此举获得4.99g/ccm理论密度的64%),和(b)冷压合7吨、0.4mm厚度和10mm直径粉末小粒且之后在空气中在1100°C烧结达1小时(此举获得4.99g/ccm理论密度的70%)。如此获得的小粒,可在每一个小粒表面上被应用PVD制造的金电极。通过电化学阻抗谱法,可确定Li0.35La0.55TiO3小粒的离子传导率,其可显示,对于被冷压合的小粒在25°C测得5.6*10-8S/cm的晶界(晶粒内)传导率,而由于测试设置的受限的频率容量,不可确定块状物(晶粒内)传导率,这继而可需要约10MHz范围的频率。当在25°C被测量时,在700°C在空气中被退火达1小时的Li0.35La0.55TiO3小粒的晶界传导率被确定为约1.8*104S/cm。然而,在1100°C被制造的小粒,而可允许反卷积(deconvolution)为块状物(晶粒间)和晶界(晶粒内)传导率,这可分别总计5.6*10-4S/cm和2.4*10-6S/cm。在其初始化充电前,这些传导率可大于LiCoO2的锂离子传导率的两个数量级(见示例3)。
实施例5:根据本发明的实施例,可用例如,80wt%LiCoO2和20wt%Ni的混合物且没有添加诸如Li0.35La0.55TiO3之类的离子传导增强剂,来制造复合阴极。该混合物可被冷压合为大小为0.3mm x 10mm直径的复合阴极小粒。通过在空气中在700°C烧结这些小粒达1小时,可进一步处理其他小粒。所得被冷压合或被烧结的复合阴极小粒可保留良好的电子传导(>10-2S/cm)。当被制造为包含1.5μm厚Lipon电解质和10μm金属Li阳极的全电化学电池时,可发现有两种小粒类型早在常压4.2V的初始化充电步骤过程中就经受了严厉的电流率限制。在25°C,数分钟内电流可衰减为约1μA,在10mAh电池的情况下,这可引起大于10,000小时(大于1年)的充电时间。这样的电池,例如,可包含83mg的LiCo02。电化学活性阴极材料(LiCoO2)的纯复合,对于例如较小阴极厚度(诸如,小于30μm,在本发明的特定实施例中常规地被构建为薄膜形式),表现出充分的离子和电子导电率。进一步,当为了高容量电池(>1mAh/cm2)使用相当厚的厚度(>>30μm)时,电子传导增强剂(Ni)可能不会导致电化学良好活性的复合阴极。因此,至少一个关键组件可从复合阴极中移去,来实现有用的电池性能。
示例6:这个示例表现出优于示例5的示例性潜在改进。根据本发明的实施例,在示例1-4中使用的粉末可被以如下重量百分比混合:40wt%LiCoO2(理论密度=5.06g/ccm),40wt%Li0.35La0.55TiO3(理论密度=4.99g/ccm),和20wt%Ni(理论密度=8.91g/ccm)。该粉末混合物可被冷压合为直径0.3mm x10mm的复合阴极小粒,具有80%的理论密度,这可从式(12)中被计算:
复合阴极小粒的理论密度(g/ccm)=100%/(40wt%/5.06g/ccm+40wt%/4.99g/ccm+20wt%/8.91g/ccm)=5.50g/ccm (12)
使用两个夹持的铜板的示例性复合阴极的电子传导率大于10-2S/cm,而通过XRD检测出没有除了原始要素LiCoO2,Li0.35La0.55TiO3、和Ni外的新的相。可从复合阴极中Li0.35La0.55TiO3的体积分数来估算复合阴极的离子传导率,这由式(13)给出:
vol% of Li0.35La0.55TiO3=40wt%*5.50g/ccm/4.99g/ccm=44vol% (13)
在第一近似中,可假设在复合阴极内小粒的以下近似是正确的:
复合阴极的密度/Li0.35La0.55TiO3的实际密度≈复合阴极的理论密度/Li0.35La0.55TiO3的理论密度 (14)
所以,式(13)为复合阴极内的Li0.35La0.55TiO3的实际vol%提供了良好的估算。可进一步假设,根据下式,通过主导锂离子导体的vol%确定复合阴极内理想晶粒大小复合的锂离子传导率:
Actual vol% Li0.35La0.55TiO3*5.6*10-8S/cm=2.5*10-8S/cm (15)
例如基于被冷压合为复合阴极小粒且没有被进一步热处理的Li0.35La0.55TiO3锂离子晶界传导率的锂离子传导率,对于实际应用目的而言太低,且可能类似于纯LiCoO2(见示例3)的锂离子传导率。因此,复合阴极小粒可在700°C被热处理,在此温度可提供0.44*1.8*10-7S/cm=7.9*10-8S/cm的复合阴极。这对于实践应用,仍然不是足够的锂离子传导率(见示例14)。在900°C退火该复合阴极小粒可使得LiCoO2与Ni的某些反应来形成NiO和LiCoO2分解侧相(decomposition side phase)。锂离子传导率的改进可以是很小的和/或可上升至约4*10-7S/cm。
明显的是,当在复合阴极内时,可改进增强剂材料的锂离子晶界传导率。复合电极,在可于复合电极的构成要素之间设置不期望的化学反应之前,例如,不可高于特定温度(如,900°C)被处理。
通过将锂离子传导增强剂的粉末碾磨和粉碎为较小晶粒大小(<2μm)和/或通过机械地或化学地合适地修改其晶粒表面增加其锂离子晶界传导率,来完成这些特定示例性改进。这样的被表面修改的锂离子传导率增强剂材料,当被冷压合为复合阴极小粒和之后在空气中在700°C达1小时的退火步骤时,可展现出约10-4S/cm的晶界传导率。约10-4S/cm的示例性复合阴极的总体锂离子传导率可允许C/30的连续电流汲取,对于具有300μm厚的复合阴极的6mAh电池,这转换为0.2mA(见示例13)。
示例7:根据本发明的实施例,基于正阴极的几何占用面积提供2mAh/cm2容量的10mm直径电化学电池,可用包含40wt%LiCoO2(理论密度=5.06g/ccm),40wt%Li0.35La0.55TiO3(理论密度=4.99g/ccm),和20wt%Ni(理论密度=8.91g/ccm)的复合阴极制造。阴极的几何占用面积是,例如,当沿其表面法向或沿设备的主轴面对着表面时获得的表面积,该表面具有当假设是非常平坦的表面时测得的几何面积。利用电化学活性阴极材料(LiCoO2)的这个载荷,可由11.2mg LiCoO2制成该复合阴极,藉此导致厚度优选为约28mg/(0.785cm2*80%*5.50g/ccm)=81μm。
示例8:根据本发明的实施例,提供2mAh/cm2容量的10mm直径电化学电池,可用包含20wt%LiCoO2(理论密度=5.06g/ccm),60wt%Li0.35La0.55TiO3(理论密度=4.99g/ccm),和20wt%Ni(理论密度=8.91g/ccm)的复合阴极制造。采用电化学活性阴极材料(LiCoO2)的这个载荷,可由11.2mg LiCoO2制成该复合阴极,藉此导致厚度为约56mg/(0.785cm2*80%*5.49g/ccm)=162μm。
示例9:根据本发明的实施例,提供4mAh/cm2容量的10mm直径电化学电池,可用包含40wt%LiCoO2(理论密度=5.06g/ccm),40wt%Li0.35La0.55TiO3(理论密度=4.99g/ccm),和20wt%Ni(理论密度=8.91g/ccm)的复合阴极制造。利用电化学活性阴极材料(LiCoO2)的这个载荷,可由22.4mg LiCoO2制成该复合阴极,藉此导致厚度为约56mg/(0.785cm2*80%*5.50g/ccm)=162μm。
示例10:根据本发明的实施例,提供4mAh/cm2容量的10mm直径电化学电池,可用包含20wt%LiCoO2(理论密度=5.06g/ccm),60wt%Li0.35La0.55TiO3(理论密度=4.99g/ccm),和20wt%Ni(理论密度=8.91g/ccm)的复合阴极制造。利用电化学活性阴极材料(LiCoO2)的这个载荷,可由22.4mg LiCoO2制成该复合阴极,藉此导致厚度为约112mg/(0.785cm2*80%*5.49g/ccm)=325μm。
示例11:根据本发明的实施例,提供5mAh/cm2容量的10mm直径电化学电池,可用包含40wt%LiCoO2(理论密度=5.06g/ccm),40wt%Li0.35La0.55TiO3(理论密度=4.99g/ccm),和20wt%Ni(理论密度=8.91g/ccm)的复合阴极制造。利用电化学活性阴极材料(LiCoO2)的这个载荷,可由28mgLiCoO2制成该复合阴极,藉此导致厚度为约70mg/(0.785cm2*80%*5.50g/ccm)=203μm。
示例12:根据本发明的实施例,提供5mAh/cm2容量的10mm直径电化学电池,可用包含20wt%LiCoO2(理论密度=5.06g/ccm),60wt%Li0.35La0.55TiO3(理论密度=4.99g/ccm),和20wt%Ni(理论密度=8.91g/ccm)的复合阴极制造。利用电化学活性阴极材料(LiCoO2)的这个载荷,可由28mgLiCoO2制成该复合阴极,藉此导致厚度为约140mg/(0.785cm2*80%*5.49g/ccm)=406μm。
示例13:根据本发明的实施例,示例11的电池,其中28mg的LiCoO2材料可由28mg的Li1.2Ni0.175Co0.10Mn0.525O2(见例如,美国专利申请公开No.2010/086853,整体通过引用并入此处)所替代,当在4.6-2.0V之间循环时,这可改进电池的容量达70%,且同时伴随着将每单位面积的容量从5mAh/cm2增强至约8.5mAh/cm2。由于LiCoO2和Li1.2Ni0.175Co0.10Mn0.525O2的理论密度类似,电池中所制造的复合阴极小粒的实际密度也类似,且因此两个复合阴极小粒厚度可约为200μm。
示例14:根据本发明的实施例,在将式(9)重新排列,
X2=4*RT/(c*z*F2)*t*G (16)
X2*c*z*F2/(4*RT)=t*G (17)
之后,其中
c=复合阴极中活性阴极负载的vol%*给定活性阴极材料中移动离子品类的浓度 (18)
对于其中活性阴极材料是LiCoO2,的情况,c=复合阴极中活性阴极负载的vol%*2.3*10-2mol/ccm(假设100%致密复合阴极),z=1,F=96485C/mol,R=8.3143J/(K*mol),T=298K,且
(复合阴极的厚度)2*复合阴极中活性阴极负载的vol%*2.2*104秒/(Ohm*ccm)=放电时间*复合阴极中的锂离子传导率 (19)
在具有40vol%载荷的500μm厚的复合阴极的情况下,例如,10小时(36,000秒)放电或充电时间(C/10率)要求在复合阴极内最小的约6*104S/cm的锂离子传导率,而C/30率(30小时的放电或充电时间)仅要求约2*10-4S/cm。
倍增阴极载荷(80vol%有效负载),例如,同时维持给定容量,允许复合阴极被制造为约1/2的阴极厚度或250μm。作为结果,C/10率容量可仅要求约3*104S/cm,而C/30的情况可仅要求约1*104S/cm。
由于创建具有在例如104S/cm的较高的锂离子传导率的复合阴极是困难的,对于给定复合已近中的给定容量和对于在给定温度处的给定放电和充电时间,一个选项可以是最大化复合阴极内活动电化学材料的vol%载荷,且同时最小化复合阴极的厚度。
对于具有给定离子传导率的给定复合阴极中的给定容量Q,放电或充电时间t根据下式确定了最大连续放电或充电电流
最大连续放电或充电电流=Q/t (20)
示例15:根据本发明的实施例,类似于示例7中的电池,不过其中Li0.35La0.55TiO3粉末具有小于2μm的平均晶粒大小,可具有改进的晶界传导率,其方式为使得电池在其4.2-2.0V的可逆性范围(reversibility range)内在10小时或更少时间内被连续放电至约2mAh/cm2。可逆性范围是,例如,通常可被接受的电压范围,在该范围中,在给定温度,给定电极“基本”稳定。较高的温度一般可减少电极的可逆性范围。例如,在25°C,LiCoO2的可逆性范围通常可被接收为4.2—2.0V相对Li+/Li,这等同于从约Li1.0CoO2(2.0V相对Li+/Li)到约Li0.5CoO2(4.2V相对Li+/Li)的化学计算(stoichiometry)范围。
示例16:根据本发明的实施例,类似于示例9中的电池,不过其中Li0.35La0.55TiO3粉末具有小于lμm的平均晶粒大小,可具有改进的晶界传导率,使得电池在4.2-2.0V内在10小时或更少时间内被连续放电至约4mAh/cm2
示例17:根据本发明的实施例,类似于示例11中的电池,不过其中Li0.35La0.55TiO3粉末具有小于0.5μm的平均晶粒大小,可具有改进的晶界传导率,使得电池在4.2-2.0V内在10小时或更少时间内被连续(且完全地)放电至约5mAh/cm2
示例18:根据本发明的实施例,示例7的电化学电池可被配置为具有1.5μm厚的Lipon电解质、10μm厚的金属Li阳极、10μm Al阴极电流集电器箔片、10μm Cu阳极电流集电器箔片、和位于该电化学电池之上和之下的100μm壁厚的聚合物袋状封装(pouchencapsulation)。当电池被充电至4.2V时,在考虑了Li阳极将其厚度增加至全部约22μm且全部复合阴极的厚度为约82μm之后,这样的特性提供了在完全包装的状态下约59Ah/升的体积容量密度(例如,通过将额定容量除以完全包装的电池体积计算得到)、和约236Wh/升的体积能量密度(例如,通过将额定容量与额定电压的乘积处于完全包装的电池体积计算得到)。“完全包装的状态”,例如,是将所有外围部件包括在电池内的电池的状态,包括,例如,电流集电器、端子、主要封装(如果外壳没有被包括在该封装内)、和外壳。
示例19:根据本发明的实施例,示例9的电化学电池可被配置为具有1.5μm厚的Lipon电解质、10μm厚的金属Li阳极、10μm Al阴极电流集电器箔片、10μm Cu阳极电流集电器箔片、和位于该电化学电池之上和之下的100μm壁厚的聚合物袋状封装。当电池被充电至4.2V时,在考虑了Li阳极将其厚度增加至全部约34μm且全部复合阴极的厚度为约163μm之后,这样的特性提供了在完全包装的状态下约92Ah/升的体积容量密度、和约368Wh/升的体积能量密度。
示例20:根据本发明的实施例,示例11的电化学电池可被配置为具有1.5μm厚的Lipon电解质、10μm厚的金属Li阳极、10μm Al阴极电流集电器箔片、10μm Cu阳极电流集电器箔片、和位于该电化学电池之上和之下的100μm壁厚的聚合物袋状封装。当电池被充电至4.2V时,在考虑了Li阳极将其厚度增加至全部约40μm且全部复合阴极的厚度为约205μm之后,这样的特性提供了在完全包装的状态下约103Ah/升的体积容量密度、和约412Wh/升的体积能量密度。
示例21:根据本发明的实施例,当在示例18、19、20的每一个示例中将电化学活性阴极材料(LiCoO2)的载荷从约40wt%增至60wt%且将锂传导增强材料(Li0.35La0.55TiO3,与LiCoO2具有非常类似的密度,从而复合阴极的厚度基本保持一样)从40wt%减少至20wt%,示例18、19、20中给出的能量密度分别增加至约354Wh/升、约552Wh/升、和约618Wh/升。
示例22:根据本发明的实施例,来自示例21的618Wh/升的电池包含约5.89mAh且可被配置为具有50μm厚的电解质、50μm厚的LiySn-活性的、纳米大小的Li4Ti5O12阳极、10μm Al阴极电流集电器箔片、10μm Cu阳极电流集电器箔片、和位于该电化学电池之上和之下的100μm壁厚的聚合物袋状封装。当电池被充电至4.2V时,这个配置提供了在完全包装的状态下具有约135Ah/升的体积容量密度和约338Wh/升的体积能量密度的电池,同时阳极厚度大约保持不变在约50μm,且复合阴极可到达约约205μm的全部厚度。然而,中间点电压,可从4.0V(示例21)变化至约2.5V。
示例23:根据本发明的实施例,复合阴极可被制造为包括60wt%LiCoO2,20wt%Ni、和20wt%化学表面改性的Li0.35La0.55TiO3的混合物。通过分别与LiIO4*2H2O、聚吡咯、Li3N、Ni、或碳在250°C-900°C的温度范围内进行前期反应,可实现Li0.35La0.55TiO3的化学表面改性。然后该混合物可被冷压合至直径0.3mm x 10mm大小的复合阴极小粒,且随后在空气中在250°C-500°C被退火。所得被退火的复合阴极小粒可保留良好的电子传导(>10-2S/cm)。当被制造为包含1.5μm厚Lipon电解质和10μm金属Li阳极的全电化学电池时,该复合阴极可为该电池提供在4.2—2.0V之间的大于C/30的连续充电和放电电流。该化学表面改性基本增强了离子传导率增强剂材料(Li0.35La0.55TiO3)的锂离子电导率达约三个数量级,从10-7S/cm的锂离子晶界(晶粒内)电导率到接近10-4S/cm的锂离子晶界传导率值。
示例24:根据本发明的实施例,可制成包含约80wt%化学表面改性的LiCoO2和20约wt%Ni的混合物且没有添加诸如Li0.35La0.55TiO3之类的任何离子传导增强剂的混合物的复合阴极。通过与LiIO4*2H2O、或聚吡咯在约250°C—900°C的温度范围内进行的独立和前期反应,可实现LiCoO2的化学表面改性。然后该混合物可被冷压合至直径0.3mm x 10mm大小的复合阴极小粒,且随后在空气中在约250°C-500°C被退火。所得被退火的复合阴极小粒可保留良好的电子传导(>10-2S/cm)。当被制造为包含1.5μm厚Lipon电解质和10μm金属Li阳极的全电化学电池时,这些电池中的这些复合阴极可维持4.2—2.0V之间的大于C/30的连续充电和放电电流。明显的是该化学表面改性基本增强了电化学活性材料(LiCoO2)的锂离子传导率达大于约3个数量级,从约2*10-8S/cm到接近约10-4S/cm的值。这个方法允许复合阴极的制造,该复合阴极具有离子传导率增强剂,其可以是电化学活性材料本身,藉此呈现出不具有电化学存储容量(如,Li0.35La0.55TiO3)冗余的被分开提供的离子传导率增强剂。
示例25:根据本发明的实施例,可制造使用来自示例24的复合阴极的10mm直径的电化学电池。该复合阴极可具有约4.43g/ccm的实际冷压合的密度(这是约5.54g/ccm的理论密度的约80%)、和约350μm的厚度。这个复合阴极为电池提供约13.7mAh的容量。这个电池可进一步被配置为具有1.5μm厚Lipon电解质、10μm厚金属Li阳极、10μm Al阴极电流集电器箔片、10μmCu阳极电流集电器箔片、和位于该电化学电池之上和之下的100μm壁厚的聚合物袋状封装。当电池被充电至4.2V时,在考虑了Li阳极将其厚度增加至全部约92μm且全部复合阴极的厚度为全部约355μm之后,这个结构提供了在完全包装的状态下约254Ah/升的体积容量密度、和约1018Wh/升的体积能量密度。这样的电化学电池可具有改进的晶界传导率,且在4.2-2.0V范围内,能使电池在10小时或更少时间内被连续(且完全地)放电至约17mAh/cm2
图1示出被用在手机电池中的Li-离子或Li-聚合物电池的现有技术的截面示图。复合阴极110一般是约100μm厚且包括四个相,其中三个相是固态相,且第四个是液相。电化学活性阴极材料111可以是固态LiCoO2(或衍生物)粉末且电子传导率增强剂113可以是石墨碳。聚合物粘合剂114,诸如PVDF,将之前两个固态相粘合至Al箔片衬底130。非水液体电解质112,其为具有溶解的锂盐的有机溶剂,渗入复合阴极110的小孔中。当100%的测量体积是电解质时,液体电解质112在25°C时具有10-2-10-3S/cm的较高的锂离子传导率。液体电解质112可到达复合电极内几乎每一个体积元素,除了已经被电化学活性阴极材料111、电子传导率增强剂113、和,某种程度上,聚合物键114,所占据的那些体积元素。假设电解质112可存在于,例如仅约30%的复合阴极体积中,且附加地例如,可具有弯曲的路径来克服小孔中的困难,以发挥其锂传导,复合阴极110,在25°C在其大部分上具有约10-3-10-4S/cm的有效整体锂离子传导率。
进一步如图1中所示,非水液态电解质112渗入、穿透聚合物衬底120(一般13-50μm厚)和一般Li-离子或Li-聚合物阳极140。Li-离子或Li-聚合物阳极140一般约100μm厚且包括一般通过石墨碳提供的电化学阳极材料141、为石墨碳而优化的聚合物键142、和非水液态电解质112。存在附加的电池组件,诸如Cu阳极电流集电器箔片和电池包装,但没有被包括在图1中。
图2示出本发明的示例性实施例中的一个。复合阴极210可包括,例如至少三个固态相(没有任何液态相出现):(1)诸如,例如LiCoO2之类的至少一个固态电化学活性阴极材料211;(2)诸如例如Ni之类的至少一个固态电子传导材料213,且在其初始化充电前具有的电子传导率比所述电化学活性阴极材料211的电子传导率至少高出三倍;和(3)诸如例如Li0.35La0.55TiO3之类的至少一个固态、无机、离子传导材料212,且在其初始化充电前具有的离子传导率比所述电化学活性阴极材料211的离子传导率至少高出三倍。
本发明的特定实施例的复合阴极210可不需要用于液态非水电解质的任何小孔,且因此可被以更为致密的方式制造(如,一般是少于20%的剩余多孔性)且为了改进的晶界结合在更高的温度被退火。本发明的特定实施例的复合阴极210可易于被制造为具有增加的厚度(如,100-1000μm)和良好的机械性质。在本发明的特定实施例中,复合阴极210可具有充分的刚性,从而它能用作自身的衬底或其他电池组件的衬底,诸如,例如,1.5μm厚固态薄膜电解质220和薄膜金属锂阳极240。
图3示出本发明的另一个可选的优选实施例。复合阴极310可包括,至少两个固态相(没有任何液态相存在):(1)诸如,例如具有被极大地增强的锂离子晶界传导率的表面改性的LiCoO2之类的至少一个固态电化学活性阴极材料311;和(2)诸如例如Ni之类的至少一个固态电子传导材料313,且在其初始化充电前具有的电子传导率比所述电化学活性阴极材料311的电子传导率至少高出三倍。提供具有被极大地增强的锂离子晶界传导率的表面改性的LiCoO2可消除对于独立的、固态、无机、离子传导材料(诸如图2中的元件212)的需要。
本发明的特定实施例的复合阴极310可不需要用于液态非水电解质的任何小孔,且因此可被以更为致密的方式制造(如,一般少于20%的剩余多孔性)且在更高的温度被退火用于改进的晶界结合。本发明的特定实施例的复合阴极310可易于被制造为具有增加的厚度(如,100-1000μm)和良好的机械性质。在大多数情况下,本发明的特定实施例的复合阴极310可具有充分的刚性,从而它能用作自身的衬底或其他电池组件的衬底,例如,1.5μm厚固态薄膜电解质320和薄膜金属锂阳极340。
上述实施例和示例仅为示例性。本领域普通技术人员可认识到本文详细描述的实施例的变体意味着落入本公开和发明的范围。因此,本发明仅由以下权利要求来限制。因此,本发明旨在涵盖本发明的所有这些修改,只要它们落在所附权利要求书及其等效方案的范围中即可。

Claims (30)

1.一种可充电的电化学设备,包括:
正复合阴极,所述正复合阴极包括:
固态电化学活性材料,在该电化学活性材料的预充电状态中具有电子传导率和晶粒内离子传导率,
固态电子传导材料,其所具有的相应的电子传导率至少是所述电化学活性材料在其预充电状态中的电子传导率的三倍高,和
固态无机的离子传导材料,其具有的相应的晶粒内离子传导率至少是所述电化学活性材料在其预充电状态中的晶粒内离子传导率的三倍高,
其中所述固态电化学活性材料或者所述固态无机的离子传导材料包括具有增强的晶粒间离子传导率的表面改性的晶界,并且所述电化学活性材料和所述离子传导材料的颗粒尺寸在0.1-10μm之间,以及
其中所述电化学设备不包含液体、胶状溶剂或聚合物粘合剂的残余。
2.如权利要求1所述的电化学设备,其特征在于,所述电化学活性材料,相比所述正复合阴极中的任何其他材料,为所述正复合阴极提供更多的电子传导率。
3.一种可充电的电化学设备,包括:
正复合阴极,其包括:
具有电子传导率和晶粒内离子传导率的固态电化学活性材料,
固态离子传导材料,包括与所述电化学活性材料不同的材料,并且其所具有的相应的晶粒内离子传导率至少为所述固态电化学活性材料在其预充电状态中的晶粒内离子传导率的三倍高,
其中所述固态电化学活性材料或者所述固态离子传导材料包括具有增强的晶粒间离子传导率的表面改性的晶界,并且其中所述电化学活性材料和所述离子传导材料的颗粒尺寸在0.1-10μm之间,
其中所述电化学设备不包含液体、胶状溶剂或聚合物粘合剂的残余。
4.如权利要求3所述的电化学设备,其特征在于,所述电化学活性材料,相比所述正复合阴极中的任何其他材料,为所述正复合阴极提供更多的电子传导率。
5.如权利要求3所述的电化学设备,其特征在于,还包括电子传导材料,其包括的电子传导率至少是所述电化学活性材料在其预充电状态中的电子传导率的三倍高。
6.如权利要求3所述的电化学设备,其特征在于,还包括固态电解质,所述固态电解质不包括液体且不包括胶状溶剂。
7.如权利要求3所述的电化学设备,其特征在于,所述正复合阴极仅包括固态电化学活性相。
8.如权利要求3所述的电化学设备,其特征在于,基于所述正复合阴极的几何占用面积,所述电化学设备具有至少2mAh/cm2的额定容量。
9.如权利要求3所述的电化学设备,其特征在于,基于所述正复合阴极的几何占用面积,所述电化学设备包括至少4mAh/cm2的额定容量。
10.如权利要求3所述的电化学设备,其特征在于,基于所述正复合阴极的几何占用面积,所述电化学设备包括至少17mAh/cm2的额定容量。
11.如权利要求3所述的电化学设备,其特征在于,在其可逆性范围内,所述电化学设备在少于30小时内能够被完全放电。
12.如权利要求3所述的电化学设备,其特征在于,在其可逆性范围内,所述电化学设备在少于10小时内能够被完全放电。
13.如权利要求7所述的电化学设备,其特征在于,在其可逆性范围内,所述电化学设备在少于30小时内能够被完全放电。
14.如权利要求7所述的电化学设备,其特征在于,在其可逆性范围内,所述电化学设备在少于10小时内能够被完全放电。
15.如权利要求8所述的电化学设备,其特征在于,在其可逆性范围内,所述电化学设备在少于30小时内能够被完全放电。
16.如权利要求8所述的电化学设备,其特征在于,在其可逆性范围内,所述电化学设备在少于10小时内能够被完全放电。
17.如权利要求9所述的电化学设备,其特征在于,在其可逆性范围内,所述电化学设备在少于30小时内能够被完全放电。
18.如权利要求9所述的电化学设备,其特征在于,在其可逆性范围内,所述电化学设备在少于10小时内能够被完全放电。
19.如权利要求10所述的电化学设备,其特征在于,在其可逆性范围内,所述电化学设备在少于30小时内能够被完全放电。
20.如权利要求10所述的电化学设备,其特征在于,在其可逆性范围内,所述电化学设备在少于10小时内能够被完全放电。
21.如权利要求3所述的电化学设备,其特征在于,包括在完全包装的状态中的至少60Ah/升的体积容量密度。
22.如权利要求3所述的电化学设备,其特征在于,包括在完全包装的状态中的至少240Wh/升的体积能量密度。
23.如权利要求7所述的电化学设备,其特征在于,包括在完全包装的状态中的至少90Ah/升的体积容量密度。
24.如权利要求7所述的电化学设备,其特征在于,包括在完全包装的状态中的至少360Wh/升的体积能量密度。
25.如权利要求8所述的电化学设备,其特征在于,包括在完全包装的状态中的至少100Ah/升的体积容量密度。
26.如权利要求8所述的电化学设备,其特征在于,包括在完全包装的状态中的至少400Wh/升的体积能量密度。
27.如权利要求10所述的电化学设备,其特征在于,包括在完全包装的状态中的至少250Ah/升的体积容量密度。
28.如权利要求10所述的电化学设备,其特征在于,包括在完全包装的状态中的至少1000Wh/升的体积能量密度。
29.如权利要求3所述的电化学设备,其特征在于,在其初始化充电之前,所述正复合阴极包括复合物。
30.如权利要求3所述的电化学设备,其特征在于,在其初始化充电之前,所述正复合阴极包括单相。
CN201180028013.4A 2010-06-07 2011-06-07 可充电、高密度的电化学设备 Active CN102947976B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35208210P 2010-06-07 2010-06-07
US61/352,082 2010-06-07
PCT/US2011/039467 WO2011156392A1 (en) 2010-06-07 2011-06-07 Rechargeable, high-density electrochemical device

Publications (2)

Publication Number Publication Date
CN102947976A CN102947976A (zh) 2013-02-27
CN102947976B true CN102947976B (zh) 2018-03-16

Family

ID=45064714

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180028013.4A Active CN102947976B (zh) 2010-06-07 2011-06-07 可充电、高密度的电化学设备

Country Status (6)

Country Link
US (2) US20110300432A1 (zh)
EP (1) EP2577777B1 (zh)
JP (3) JP2013528912A (zh)
KR (1) KR101930561B1 (zh)
CN (1) CN102947976B (zh)
WO (1) WO2011156392A1 (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013131005A2 (en) * 2012-03-01 2013-09-06 Excellatron Solid State, Llc High capacity solid state composite cathode, solid state composite separator, solid-state rechargeable lithium battery and methods of making same
US10084168B2 (en) 2012-10-09 2018-09-25 Johnson Battery Technologies, Inc. Solid-state battery separators and methods of fabrication
DE102012224377A1 (de) 2012-12-27 2014-07-03 Robert Bosch Gmbh Verfahren zum Herstellen eines galvanischen Elements und galvanisches Element
JP6299251B2 (ja) * 2014-02-10 2018-03-28 セイコーエプソン株式会社 電極複合体の製造方法、電極複合体および電池
US9627709B2 (en) 2014-10-15 2017-04-18 Sakti3, Inc. Amorphous cathode material for battery device
DE102014226396B4 (de) 2014-12-18 2025-12-18 Bayerische Motoren Werke Aktiengesellschaft Herstellung einer Kompositkathode
CN108604665B (zh) 2015-12-21 2022-04-22 约翰逊Ip控股有限公司 固态电池、隔板、电极和制造方法
TWI575802B (zh) * 2015-12-22 2017-03-21 財團法人工業技術研究院 鋰正極材料與鋰電池
US10218044B2 (en) 2016-01-22 2019-02-26 Johnson Ip Holding, Llc Johnson lithium oxygen electrochemical engine
US10734676B2 (en) 2016-06-30 2020-08-04 Wildcat Discovery Technologies, Inc Solid electrolyte compositions
WO2018006025A1 (en) * 2016-06-30 2018-01-04 Wildcat Discovery Technologies, Inc. Electrode compositions for solid-state batteries
US10777845B2 (en) 2016-11-23 2020-09-15 Wildcat Discovery Technologies, Inc. Solid electrolyte compositions for electrochemical cells
WO2018193630A1 (ja) * 2017-04-21 2018-10-25 日立化成株式会社 電気化学デバイス用電極及び電気化学デバイス
US11993710B2 (en) 2017-06-30 2024-05-28 Wildcat Discovery Technologies, Inc. Composite solid state electrolyte and lithium ion battery containing the same
KR102238829B1 (ko) * 2018-02-07 2021-04-09 주식회사 엘지화학 리튬 금속 이차전지 및 이를 포함하는 전지모듈
US11108035B2 (en) * 2019-01-08 2021-08-31 Samsung Electronics Co., Ltd. Solid-state positive electrode, method of manufacture thereof, and battery including the electrode
CN113424351B (zh) * 2019-02-20 2024-07-12 尤米科尔公司 用于固态可充电锂离子蓄电池的粉末状固体电解质化合物
CN111896428A (zh) * 2020-08-10 2020-11-06 南京工业大学 砂浆和混凝土中硫酸根离子扩散系数测定装置及方法
CN112103463B (zh) * 2020-09-14 2022-03-29 珠海冠宇动力电池有限公司 一种负极极片及包括该负极极片的锂离子电池

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6365300B1 (en) * 1998-12-03 2002-04-02 Sumitomo Electric Industries, Ltd. Lithium secondary battery
CN101595590A (zh) * 2007-02-13 2009-12-02 丰田自动车株式会社 全固体锂二次电池

Family Cites Families (774)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US712316A (en) 1899-10-26 1902-10-28 Francois Loppe Electric accumulator.
US3309302A (en) 1963-10-07 1967-03-14 Varian Associates Method of preparing an electron tube including sputtering a suboxide of titanium on dielectric components thereof
US3616403A (en) 1968-10-25 1971-10-26 Ibm Prevention of inversion of p-type semiconductor material during rf sputtering of quartz
US3790432A (en) 1971-12-30 1974-02-05 Nasa Reinforced polyquinoxaline gasket and method of preparing the same
US3797091A (en) 1972-05-15 1974-03-19 Du Pont Terminal applicator
US3850604A (en) 1972-12-11 1974-11-26 Gte Laboratories Inc Preparation of chalcogenide glass sputtering targets
US4111523A (en) 1973-07-23 1978-09-05 Bell Telephone Laboratories, Incorporated Thin film optical waveguide
US3939008A (en) 1975-02-10 1976-02-17 Exxon Research And Engineering Company Use of perovskites and perovskite-related compounds as battery cathodes
US4127424A (en) 1976-12-06 1978-11-28 Ses, Incorporated Photovoltaic cell array
US4082569A (en) 1977-02-22 1978-04-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Solar cell collector
JPS559305A (en) 1978-07-04 1980-01-23 Asahi Chem Ind Co Ltd Thin metal-layer-halogen-type cell
DE2849294C3 (de) 1977-11-22 1982-03-04 Asahi Kasei Kogyo K.K., Osaka Dünne Metall-Halogen-Zelle und Verfahren zu ihrer Herstellung
IE49121B1 (en) 1978-12-11 1985-08-07 Triplex Safety Glass Co Producing glass sheets of required curved shape
US4318938A (en) 1979-05-29 1982-03-09 The University Of Delaware Method for the continuous manufacture of thin film solar cells
JPS5676060A (en) 1979-11-27 1981-06-23 Mitsubishi Electric Corp Electric field strength detector
JPS56156675A (en) 1980-04-12 1981-12-03 Toshiba Corp Solid battery
US4395713A (en) 1980-05-06 1983-07-26 Antenna, Incorporated Transit antenna
US4442144A (en) 1980-11-17 1984-04-10 International Business Machines Corporation Method for forming a coating on a substrate
US4467236A (en) 1981-01-05 1984-08-21 Piezo Electric Products, Inc. Piezoelectric acousto-electric generator
US4328297A (en) 1981-03-27 1982-05-04 Yardngy Electric Corporation Electrode
US5055704A (en) 1984-07-23 1991-10-08 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with battery housing
US4756717A (en) 1981-08-24 1988-07-12 Polaroid Corporation Laminar batteries and methods of making the same
US4664993A (en) 1981-08-24 1987-05-12 Polaroid Corporation Laminar batteries and methods of making the same
JPS58216476A (ja) 1982-06-11 1983-12-16 Hitachi Ltd 光発電蓄電装置
JPS5950027A (ja) 1982-09-13 1984-03-22 Hitachi Ltd 二硫化チタン薄膜およびその形成法
US4518661A (en) 1982-09-28 1985-05-21 Rippere Ralph E Consolidation of wires by chemical deposition and products resulting therefrom
US4437966A (en) 1982-09-30 1984-03-20 Gte Products Corporation Sputtering cathode apparatus
JPS59217964A (ja) 1983-05-26 1984-12-08 Hitachi Ltd 薄膜電池の正極構造
JPS59227090A (ja) 1983-06-06 1984-12-20 Hitachi Ltd 不揮発性メモリ装置
DE3345659A1 (de) 1983-06-16 1984-12-20 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Keramikkoerper aus zirkoniumdioxid (zro(pfeil abwaerts)2(pfeil abwaerts)) und verfahren zu seiner herstellung
JPS6068558A (ja) 1983-09-26 1985-04-19 Hitachi Ltd 全固体薄膜リチウム電池
DE3472398D1 (en) 1983-10-17 1988-08-04 Tosoh Corp High-strength zirconia type sintered body and process for preparation thereof
DE3417732A1 (de) 1984-05-12 1986-07-10 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum aufbringen von siliziumhaltigen schichten auf substraten durch katodenzerstaeubung und zerstaeubungskatode zur durchfuehrung des verfahrens
GB8414878D0 (en) 1984-06-11 1984-07-18 Gen Electric Co Plc Integrated optical waveguides
JPH06101335B2 (ja) 1984-11-26 1994-12-12 株式会社日立製作所 全固体リチウム電池
US4785459A (en) 1985-05-01 1988-11-15 Baer Thomas M High efficiency mode matched solid state laser with transverse pumping
JPS61269072A (ja) 1985-05-23 1986-11-28 Nippon Denki Sanei Kk 圧電式加速度センサ−
US4710940A (en) 1985-10-01 1987-12-01 California Institute Of Technology Method and apparatus for efficient operation of optically pumped laser
US5296089A (en) 1985-12-04 1994-03-22 Massachusetts Institute Of Technology Enhanced radiative zone-melting recrystallization method and apparatus
US5173271A (en) 1985-12-04 1992-12-22 Massachusetts Institute Of Technology Enhanced radiative zone-melting recrystallization method and apparatus
US4964877A (en) 1986-01-14 1990-10-23 Wilson Greatbatch Ltd. Non-aqueous lithium battery
JPS62267944A (ja) 1986-05-16 1987-11-20 Hitachi Ltd 磁気記録媒体
US4668593A (en) 1986-08-29 1987-05-26 Eltron Research, Inc. Solvated electron lithium electrode for high energy density battery
US4977007A (en) 1986-09-19 1990-12-11 Matsushita Electrical Indust. Co. Solid electrochemical element and production process therefor
US4740431A (en) 1986-12-22 1988-04-26 Spice Corporation Integrated solar cell and battery
JPS63290922A (ja) 1987-05-22 1988-11-28 Matsushita Electric Works Ltd 体重計
US4728588A (en) 1987-06-01 1988-03-01 The Dow Chemical Company Secondary battery
US4865428A (en) 1987-08-21 1989-09-12 Corrigan Dennis A Electrooptical device
JP2692816B2 (ja) 1987-11-13 1997-12-17 株式会社きもと 薄型一次電池
US4826743A (en) 1987-12-16 1989-05-02 General Motors Corporation Solid-state lithium battery
US4878094A (en) 1988-03-30 1989-10-31 Minko Balkanski Self-powered electronic component and manufacturing method therefor
US4915810A (en) 1988-04-25 1990-04-10 Unisys Corporation Target source for ion beam sputter deposition
US4903326A (en) 1988-04-27 1990-02-20 Motorola, Inc. Detachable battery pack with a built-in broadband antenna
US5096852A (en) 1988-06-02 1992-03-17 Burr-Brown Corporation Method of making plastic encapsulated multichip hybrid integrated circuits
DE3821207A1 (de) 1988-06-23 1989-12-28 Leybold Ag Anordnung zum beschichten eines substrats mit dielektrika
US5403680A (en) 1988-08-30 1995-04-04 Osaka Gas Company, Ltd. Photolithographic and electron beam lithographic fabrication of micron and submicron three-dimensional arrays of electronically conductive polymers
FR2638764B1 (fr) 1988-11-04 1993-05-07 Centre Nat Rech Scient Element composite comportant une couche en chalcogenure ou oxychalcogenure de titane, utilisable en particulier comme electrode positive dans une cellule electrochimique en couches minces
JPH02133599A (ja) 1988-11-11 1990-05-22 Agency Of Ind Science & Technol 酸化イリジウム膜の製造方法
US4985317A (en) 1988-11-30 1991-01-15 Japan Synthetic Rubber Co., Ltd. Lithium ion-conductive solid electrolyte containing lithium titanium phosphate
JPH02230662A (ja) 1989-03-03 1990-09-13 Tonen Corp リチウム電池
US5006737A (en) 1989-04-24 1991-04-09 Motorola Inc. Transformerless semiconductor AC switch having internal biasing means
US5100821A (en) 1989-04-24 1992-03-31 Motorola, Inc. Semiconductor AC switch
US5217828A (en) 1989-05-01 1993-06-08 Brother Kogyo Kabushiki Kaisha Flexible thin film cell including packaging material
JP2808660B2 (ja) 1989-05-01 1998-10-08 ブラザー工業株式会社 薄膜電池内蔵プリント基板の製造方法
US5540742A (en) 1989-05-01 1996-07-30 Brother Kogyo Kabushiki Kaisha Method of fabricating thin film cells and printed circuit boards containing thin film cells using a screen printing process
JP2690363B2 (ja) 1989-06-30 1997-12-10 株式会社テック 直流電源装置及びその直流電源装置を使用した放電灯点灯装置
US5221891A (en) 1989-07-31 1993-06-22 Intermatic Incorporated Control circuit for a solar-powered rechargeable power source and load
US5119269A (en) 1989-08-23 1992-06-02 Seiko Epson Corporation Semiconductor with a battery unit
US5223457A (en) 1989-10-03 1993-06-29 Applied Materials, Inc. High-frequency semiconductor wafer processing method using a negative self-bias
US5792550A (en) 1989-10-24 1998-08-11 Flex Products, Inc. Barrier film having high colorless transparency and method
JP2758948B2 (ja) 1989-12-15 1998-05-28 キヤノン株式会社 薄膜形成方法
DE4022090A1 (de) 1989-12-18 1991-06-20 Forschungszentrum Juelich Gmbh Elektro-optisches bauelement und verfahren zu dessen herstellung
US5196374A (en) 1990-01-26 1993-03-23 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with molded cell
US5124782A (en) 1990-01-26 1992-06-23 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with molded cell
US5252194A (en) 1990-01-26 1993-10-12 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
US5169408A (en) 1990-01-26 1992-12-08 Fsi International, Inc. Apparatus for wafer processing with in situ rinse
US5085904A (en) 1990-04-20 1992-02-04 E. I. Du Pont De Nemours And Company Barrier materials useful for packaging
US5306569A (en) 1990-06-15 1994-04-26 Hitachi Metals, Ltd. Titanium-tungsten target material and manufacturing method thereof
JP2642223B2 (ja) 1990-06-25 1997-08-20 シャープ株式会社 電池用電極とその製造方法
JP2755471B2 (ja) 1990-06-29 1998-05-20 日立電線株式会社 希土類元素添加光導波路及びその製造方法
JP2984035B2 (ja) 1990-07-11 1999-11-29 株式会社フジクラ 溶射薄膜形成面の温度管理方法
US5645626A (en) 1990-08-10 1997-07-08 Bend Research, Inc. Composite hydrogen separation element and module
US5225288A (en) 1990-08-10 1993-07-06 E. I. Du Pont De Nemours And Company Solvent blockers and multilayer barrier coatings for thin films
US5147985A (en) 1990-08-14 1992-09-15 The Scabbard Corporation Sheet batteries as substrate for electronic circuit
US5110694A (en) 1990-10-11 1992-05-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Secondary Li battery incorporating 12-Crown-4 ether
US5110696A (en) 1990-11-09 1992-05-05 Bell Communications Research Rechargeable lithiated thin film intercalation electrode battery
US5273608A (en) 1990-11-29 1993-12-28 United Solar Systems Corporation Method of encapsulating a photovoltaic device
US5493177A (en) 1990-12-03 1996-02-20 The Regents Of The University Of California Sealed micromachined vacuum and gas filled devices
US5057385A (en) 1990-12-14 1991-10-15 Hope Henry F Battery packaging construction
NL9002844A (nl) 1990-12-21 1992-07-16 Philips Nv Systeem omvattende een apparaat en een cassette, alsmede een apparaat en een cassette geschikt voor toepassing in een dergelijk systeem.
CA2056139C (en) 1991-01-31 2000-08-01 John C. Bailey Electrochromic thin film state-of-charge detector for on-the-cell application
US5227264A (en) 1991-02-14 1993-07-13 Hydro-Quebec Device for packaging a lithium battery
US6110531A (en) 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
US5180645A (en) 1991-03-01 1993-01-19 Motorola, Inc. Integral solid state embedded power supply
US5119460A (en) 1991-04-25 1992-06-02 At&T Bell Laboratories Erbium-doped planar optical device
US5200029A (en) 1991-04-25 1993-04-06 At&T Bell Laboratories Method of making a planar optical amplifier
US5107538A (en) 1991-06-06 1992-04-21 At&T Bell Laboratories Optical waveguide system comprising a rare-earth Si-based optical device
US5208121A (en) 1991-06-18 1993-05-04 Wisconsin Alumni Research Foundation Battery utilizing ceramic membranes
US5153710A (en) 1991-07-26 1992-10-06 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with laminated backup cell
US5187564A (en) 1991-07-26 1993-02-16 Sgs-Thomson Microelectronics, Inc. Application of laminated interconnect media between a laminated power source and semiconductor devices
US5171413A (en) 1991-09-16 1992-12-15 Tufts University Methods for manufacturing solid state ionic devices
US5196041A (en) 1991-09-17 1993-03-23 The Charles Stark Draper Laboratory, Inc. Method of forming an optical channel waveguide by gettering
US5355089A (en) 1992-07-22 1994-10-11 Duracell Inc. Moisture barrier for battery with electrochemical tester
JP2755844B2 (ja) 1991-09-30 1998-05-25 シャープ株式会社 プラスチック基板液晶表示素子
US5702829A (en) 1991-10-14 1997-12-30 Commissariat A L'energie Atomique Multilayer material, anti-erosion and anti-abrasion coating incorporating said multilayer material
WO1993011572A1 (en) 1991-12-06 1993-06-10 Yuasa Corporation Thin battery and monolithic thin battery
DK0546709T3 (da) 1991-12-11 1997-10-13 Mobil Oil Corp Stærk filmbarriere
US5287427A (en) 1992-05-05 1994-02-15 At&T Bell Laboratories Method of making an article comprising an optical component, and article comprising the component
US5497140A (en) 1992-08-12 1996-03-05 Micron Technology, Inc. Electrically powered postage stamp or mailing or shipping label operative with radio frequency (RF) communication
US6144916A (en) 1992-05-15 2000-11-07 Micron Communications, Inc. Itinerary monitoring system for storing a plurality of itinerary data points
SE470081B (sv) 1992-05-19 1993-11-01 Gustavsson Magnus Peter M Elektriskt uppvärmt plagg eller liknande
US6741178B1 (en) 1992-06-17 2004-05-25 Micron Technology, Inc Electrically powered postage stamp or mailing or shipping label operative with radio frequency (RF) communication
US5779839A (en) 1992-06-17 1998-07-14 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
US6045652A (en) 1992-06-17 2000-04-04 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
US5776278A (en) 1992-06-17 1998-07-07 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
DE4319878A1 (de) 1992-06-17 1993-12-23 Micron Technology Inc Hochfrequenz-Identifikationseinrichtung (HFID) und Verfahren zu ihrer Herstellung
US5326652A (en) 1993-01-25 1994-07-05 Micron Semiconductor, Inc. Battery package and method using flexible polymer films having a deposited layer of an inorganic material
JP3558655B2 (ja) 1992-06-28 2004-08-25 株式会社アルバック マグネトロンスパッタ装置
US5338625A (en) 1992-07-29 1994-08-16 Martin Marietta Energy Systems, Inc. Thin film battery and method for making same
US7158031B2 (en) 1992-08-12 2007-01-02 Micron Technology, Inc. Thin, flexible, RFID label and system for use
JP3214910B2 (ja) 1992-08-18 2001-10-02 富士通株式会社 平面導波路型光増幅器の製造方法
JPH06100333A (ja) 1992-09-16 1994-04-12 Kobe Steel Ltd 金属イオン注入表面改質ガラス
US5538796A (en) 1992-10-13 1996-07-23 General Electric Company Thermal barrier coating system having no bond coat
US5597661A (en) 1992-10-23 1997-01-28 Showa Denko K.K. Solid polymer electrolyte, battery and solid-state electric double layer capacitor using the same as well as processes for the manufacture thereof
JP3231900B2 (ja) 1992-10-28 2001-11-26 株式会社アルバック 成膜装置
US5326653A (en) 1992-10-29 1994-07-05 Valence Technology, Inc. Battery unit with reinforced current collector tabs and method of making a battery unit having strengthened current collector tabs
JP3214107B2 (ja) 1992-11-09 2001-10-02 富士電機株式会社 電池搭載集積回路装置
US5942089A (en) 1996-04-22 1999-08-24 Northwestern University Method for sputtering compounds on a substrate
JPH06158308A (ja) 1992-11-24 1994-06-07 Hitachi Metals Ltd インジウム・スズ酸化物膜用スパッタリング用ターゲットおよびその製造方法
US5279624A (en) 1992-11-27 1994-01-18 Gould Inc. Solder sealed solid electrolyte cell housed within a ceramic frame and the method for producing it
US5307240A (en) 1992-12-02 1994-04-26 Intel Corporation Chiplid, multichip semiconductor package design concept
US6022458A (en) 1992-12-07 2000-02-08 Canon Kabushiki Kaisha Method of production of a semiconductor substrate
AU669754B2 (en) 1992-12-18 1996-06-20 Becton Dickinson & Company Barrier coating
US5303319A (en) 1992-12-28 1994-04-12 Honeywell Inc. Ion-beam deposited multilayer waveguides and resonators
SE500725C2 (sv) 1992-12-29 1994-08-15 Volvo Ab Anordning vid paneler för farkoster
US5427669A (en) 1992-12-30 1995-06-27 Advanced Energy Industries, Inc. Thin film DC plasma processing system
US5718813A (en) 1992-12-30 1998-02-17 Advanced Energy Industries, Inc. Enhanced reactive DC sputtering system
US5547780A (en) 1993-01-18 1996-08-20 Yuasa Corporation Battery precursor and a battery
US5300461A (en) 1993-01-25 1994-04-05 Intel Corporation Process for fabricating sealed semiconductor chip using silicon nitride passivation film
US5338624A (en) 1993-02-08 1994-08-16 Globe-Union Inc. Thermal management of rechargeable batteries
JPH06279185A (ja) 1993-03-25 1994-10-04 Canon Inc ダイヤモンド結晶およびダイヤモンド結晶膜の形成方法
US5262254A (en) 1993-03-30 1993-11-16 Valence Technology, Inc. Positive electrode for rechargeable lithium batteries
US5302474A (en) * 1993-04-02 1994-04-12 Valence Technology, Inc. Fullerene-containing cathodes for solid electrochemical cells
US5613995A (en) 1993-04-23 1997-03-25 Lucent Technologies Inc. Method for making planar optical waveguides
US5665490A (en) 1993-06-03 1997-09-09 Showa Denko K.K. Solid polymer electrolyte, battery and solid-state electric double layer capacitor using the same as well as processes for the manufacture thereof
US5464692A (en) 1993-06-17 1995-11-07 Quality Manufacturing Incorporated Flexible masking tape
EP0639655B1 (en) 1993-07-28 2000-09-27 Asahi Glass Company Ltd. Method and apparatus for sputtering
US5499207A (en) 1993-08-06 1996-03-12 Hitachi, Ltd. Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same
US5360686A (en) 1993-08-20 1994-11-01 The United States Of America As Represented By The National Aeronautics And Space Administration Thin composite solid electrolyte film for lithium batteries
US5599355A (en) 1993-08-20 1997-02-04 Nagasubramanian; Ganesan Method for forming thin composite solid electrolyte film for lithium batteries
JP2642849B2 (ja) 1993-08-24 1997-08-20 株式会社フロンテック 薄膜の製造方法および製造装置
US5478456A (en) 1993-10-01 1995-12-26 Minnesota Mining And Manufacturing Company Sputtering target
US5314765A (en) 1993-10-14 1994-05-24 Martin Marietta Energy Systems, Inc. Protective lithium ion conducting ceramic coating for lithium metal anodes and associate method
EP0652308B1 (en) 1993-10-14 2002-03-27 Neuralsystems Corporation Method of and apparatus for forming single-crystalline thin film
US5411537A (en) 1993-10-29 1995-05-02 Intermedics, Inc. Rechargeable biomedical battery powered devices with recharging and control system therefor
US5445856A (en) 1993-11-10 1995-08-29 Chaloner-Gill; Benjamin Protective multilayer laminate for covering an electrochemical device
US5985485A (en) 1993-11-19 1999-11-16 Ovshinsky; Stanford R. Solid state battery having a disordered hydrogenated carbon negative electrode
US5512387A (en) 1993-11-19 1996-04-30 Ovonic Battery Company, Inc. Thin-film, solid state battery employing an electrically insulating, ion conducting electrolyte material
US5738731A (en) 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
US5433835B1 (en) 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
US5487822A (en) 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
US5387482A (en) 1993-11-26 1995-02-07 Motorola, Inc. Multilayered electrolyte and electrochemical cells used same
US5654984A (en) 1993-12-03 1997-08-05 Silicon Systems, Inc. Signal modulation across capacitors
US5419982A (en) 1993-12-06 1995-05-30 Valence Technology, Inc. Corner tab termination for flat-cell batteries
US6242128B1 (en) 1993-12-06 2001-06-05 Valence Technology, Inc. Fastener system of tab bussing for batteries
US5569520A (en) 1994-01-12 1996-10-29 Martin Marietta Energy Systems, Inc. Rechargeable lithium battery for use in applications requiring a low to high power output
JPH07224379A (ja) 1994-02-14 1995-08-22 Ulvac Japan Ltd スパッタ方法およびそのスパッタ装置
US5961672A (en) 1994-02-16 1999-10-05 Moltech Corporation Stabilized anode for lithium-polymer batteries
JP3836163B2 (ja) 1994-02-22 2006-10-18 旭硝子セラミックス株式会社 高屈折率膜の形成方法
US5561004A (en) 1994-02-25 1996-10-01 Bates; John B. Packaging material for thin film lithium batteries
US5464706A (en) 1994-03-02 1995-11-07 Dasgupta; Sankar Current collector for lithium ion battery
US6408402B1 (en) 1994-03-22 2002-06-18 Hyperchip Inc. Efficient direct replacement cell fault tolerant architecture
US5475528A (en) 1994-03-25 1995-12-12 Corning Incorporated Optical signal amplifier glasses
US5470396A (en) 1994-04-12 1995-11-28 Amoco Corporation Solar cell module package and method for its preparation
US5805223A (en) 1994-05-25 1998-09-08 Canon Kk Image encoding apparatus having an intrapicture encoding mode and interpicture encoding mode
US5411592A (en) 1994-06-06 1995-05-02 Ovonic Battery Company, Inc. Apparatus for deposition of thin-film, solid state batteries
KR100186895B1 (ko) 1994-06-13 1999-04-15 고다 시게노리 유리박막으로된 탄산가스센서
US5472795A (en) 1994-06-27 1995-12-05 Board Of Regents Of The University Of The University Of Wisconsin System, On Behalf Of The University Of Wisconsin-Milwaukee Multilayer nanolaminates containing polycrystalline zirconia
WO1996000996A1 (en) 1994-06-30 1996-01-11 The Whitaker Corporation Planar hybrid optical amplifier
US5457569A (en) 1994-06-30 1995-10-10 At&T Ipm Corp. Semiconductor amplifier or laser having integrated lens
JP3407409B2 (ja) 1994-07-27 2003-05-19 富士通株式会社 高誘電率薄膜の製造方法
US5504041A (en) 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US6181283B1 (en) 1994-08-01 2001-01-30 Rangestar Wireless, Inc. Selectively removable combination battery and antenna assembly for a telecommunication device
US5445906A (en) 1994-08-03 1995-08-29 Martin Marietta Energy Systems, Inc. Method and system for constructing a rechargeable battery and battery structures formed with the method
US5458995A (en) 1994-08-12 1995-10-17 The United States Of America As Represented By The Secretary Of The Army Solid state electrochemical cell including lithium iodide as an electrolyte additive
US5483613A (en) 1994-08-16 1996-01-09 At&T Corp. Optical device with substrate and waveguide structure having thermal matching interfaces
US5909346A (en) 1994-08-26 1999-06-01 Aiwa Research & Development, Inc. Thin magnetic film including multiple geometry gap structures on a common substrate
JP3042333B2 (ja) 1994-10-18 2000-05-15 オムロン株式会社 電気信号変位変換装置、当該変換装置を用いた機器、および当該変換装置を用いた流体搬送装置の駆動方法
US5498489A (en) 1995-04-14 1996-03-12 Dasgupta; Sankar Rechargeable non-aqueous lithium battery having stacked electrochemical cells
US5437692A (en) 1994-11-02 1995-08-01 Dasgupta; Sankar Method for forming an electrode-electrolyte assembly
JPH08148709A (ja) 1994-11-15 1996-06-07 Mitsubishi Electric Corp 薄型太陽電池の製造方法及び薄型太陽電池の製造装置
US7162392B2 (en) 1994-11-21 2007-01-09 Phatrat Technology, Inc. Sport performance systems for measuring athletic performance, and associated methods
US6025094A (en) 1994-11-23 2000-02-15 Polyplus Battery Company, Inc. Protective coatings for negative electrodes
US6204111B1 (en) 1994-12-28 2001-03-20 Matsushita Electronics Corporation Fabrication method of capacitor for integrated circuit
CN1075243C (zh) 1994-12-28 2001-11-21 松下电器产业株式会社 集成电路用电容元件及其制造方法
US5555342A (en) 1995-01-17 1996-09-10 Lucent Technologies Inc. Planar waveguide and a process for its fabrication
US5607789A (en) 1995-01-23 1997-03-04 Duracell Inc. Light transparent multilayer moisture barrier for electrochemical cell tester and cell employing same
EP0752017A1 (en) 1995-01-25 1997-01-08 Applied Komatsu Technology, Inc. Autoclave bonding of sputtering target assembly
US5755831A (en) 1995-02-22 1998-05-26 Micron Communications, Inc. Method of forming a button-type battery and a button-type battery with improved separator construction
US6444750B1 (en) 1995-03-06 2002-09-03 Exxonmobil Oil Corp. PVOH-based coating solutions
US5612153A (en) 1995-04-13 1997-03-18 Valence Technology, Inc. Battery mask from radiation curable and thermoplastic materials
CA2218279A1 (en) 1995-04-25 1996-10-31 The Boc Group, Inc. Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
US5771562A (en) 1995-05-02 1998-06-30 Motorola, Inc. Passivation of organic devices
DE69633823T2 (de) 1995-05-18 2005-10-27 Asahi Glass Co., Ltd. Verfahren zur herstellung eines sputtertargets
US5645960A (en) 1995-05-19 1997-07-08 The United States Of America As Represented By The Secretary Of The Air Force Thin film lithium polymer battery
US5601952A (en) 1995-05-24 1997-02-11 Dasgupta; Sankar Lithium-Manganese oxide electrode for a rechargeable lithium battery
US5622652A (en) 1995-06-07 1997-04-22 Img Group Limited Electrically-conductive liquid for directly printing an electrical circuit component onto a substrate, and a method for making such a liquid
US5625202A (en) 1995-06-08 1997-04-29 University Of Central Florida Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth
US6265652B1 (en) 1995-06-15 2001-07-24 Kanegafuchi Kagaku Kogyo Kabushiki Kabushiki Kaisha Integrated thin-film solar battery and method of manufacturing the same
KR100342189B1 (ko) 1995-07-12 2002-11-30 삼성전자 주식회사 휘발성복합체를사용한희토류원소첨가광섬유제조방법
US6118426A (en) 1995-07-20 2000-09-12 E Ink Corporation Transducers and indicators having printed displays
US6639578B1 (en) 1995-07-20 2003-10-28 E Ink Corporation Flexible displays
US6459418B1 (en) 1995-07-20 2002-10-01 E Ink Corporation Displays combining active and non-active inks
US5677784A (en) 1995-07-24 1997-10-14 Ellis D. Harris Sr. Family Trust Array of pellicle optical gates
ATE204029T1 (de) 1995-08-18 2001-08-15 Heraeus Gmbh W C Target für die kathodenzerstäubung und verfahren zur herstellung eines solchen targets
US5563979A (en) 1995-08-31 1996-10-08 Lucent Technologies Inc. Erbium-doped planar optical device
US5582935A (en) 1995-09-28 1996-12-10 Dasgupta; Sankar Composite electrode for a lithium battery
US5689522A (en) 1995-10-02 1997-11-18 The Regents Of The University Of California High efficiency 2 micrometer laser utilizing wing-pumped Tm3+ and a laser diode array end-pumping architecture
US5716736A (en) 1995-10-06 1998-02-10 Midwest Research Institute Solid lithium-ion electrolyte
US5616933A (en) 1995-10-16 1997-04-01 Sony Corporation Nitride encapsulated thin film transistor fabrication technique
US5719976A (en) 1995-10-24 1998-02-17 Lucent Technologies, Inc. Optimized waveguide structure
JP3298799B2 (ja) 1995-11-22 2002-07-08 ルーセント テクノロジーズ インコーポレイテッド クラッディングポンプファイバとその製造方法
US5686360A (en) 1995-11-30 1997-11-11 Motorola Passivation of organic devices
US5811177A (en) 1995-11-30 1998-09-22 Motorola, Inc. Passivation of electroluminescent organic devices
US6608464B1 (en) 1995-12-11 2003-08-19 The Johns Hopkins University Integrated power source layered with thin film rechargeable batteries, charger, and charge-control
US5644207A (en) 1995-12-11 1997-07-01 The Johns Hopkins University Integrated power source
US5897522A (en) 1995-12-20 1999-04-27 Power Paper Ltd. Flexible thin layer open electrochemical cell and applications of same
GB9601236D0 (en) 1996-01-22 1996-03-20 Atraverda Ltd Conductive coating
US5955161A (en) 1996-01-30 1999-09-21 Becton Dickinson And Company Blood collection tube assembly
US5637418A (en) 1996-02-08 1997-06-10 Motorola, Inc. Package for a flat electrochemical device
US5721067A (en) 1996-02-22 1998-02-24 Jacobs; James K. Rechargeable lithium battery having improved reversible capacity
US5845990A (en) 1996-03-11 1998-12-08 Hilite Systems, L.L.C. High signal lights for automotive vehicles
DE19609647A1 (de) 1996-03-12 1997-09-18 Univ Sheffield Hartstoffschicht
WO1997035044A1 (en) 1996-03-22 1997-09-25 Materials Research Corporation Method and apparatus for rf diode sputtering
US5930584A (en) 1996-04-10 1999-07-27 United Microelectronics Corp. Process for fabricating low leakage current electrode for LPCVD titanium oxide films
JPH1010675A (ja) 1996-04-22 1998-01-16 Fuji Photo Film Co Ltd 記録材料
JP3346167B2 (ja) 1996-05-27 2002-11-18 三菱マテリアル株式会社 高強度誘電体スパッタリングターゲットおよびその製造方法並びに膜
US5853830A (en) 1996-06-12 1998-12-29 Hoechst Trespaphan Gmbh Transparent barrier coatings exhibiting reduced thin film interference
US5948464A (en) 1996-06-19 1999-09-07 Imra America, Inc. Process of manufacturing porous separator for electrochemical power supply
EP0814529A1 (fr) 1996-06-19 1997-12-29 Koninklijke Philips Electronics N.V. Carte mince comprenant un accumulateur plat et des contacts
US5731661A (en) 1996-07-15 1998-03-24 Motorola, Inc. Passivation of electroluminescent organic devices
US5855744A (en) 1996-07-19 1999-01-05 Applied Komatsu Technology, Inc. Non-planar magnet tracking during magnetron sputtering
US5693956A (en) 1996-07-29 1997-12-02 Motorola Inverted oleds on hard plastic substrate
JP3825843B2 (ja) 1996-09-12 2006-09-27 キヤノン株式会社 太陽電池モジュール
JP2002511179A (ja) 1996-10-11 2002-04-09 マサチューセッツ・インスティテュート・オブ・テクノロジー 電池のための固体電解質、インターカレーション化合物及び電極
US6007945A (en) 1996-10-15 1999-12-28 Electrofuel Inc. Negative electrode for a rechargeable lithium battery comprising a solid solution of titanium dioxide and tin dioxide
JP3631341B2 (ja) 1996-10-18 2005-03-23 Tdk株式会社 積層型複合機能素子およびその製造方法
US5716728A (en) 1996-11-04 1998-02-10 Wilson Greatbatch Ltd. Alkali metal electrochemical cell with improved energy density
US5841931A (en) 1996-11-26 1998-11-24 Massachusetts Institute Of Technology Methods of forming polycrystalline semiconductor waveguides for optoelectronic integrated circuits, and devices formed thereby
US5783333A (en) 1996-11-27 1998-07-21 Polystor Corporation Lithium nickel cobalt oxides for positive electrodes
WO1998026429A1 (fr) 1996-12-11 1998-06-18 Tonen Chemical Corporation Film fin, electrolytique, aprotique, conducteur pelliculaire a liquide immobilise et cellule polymere
US6144795A (en) 1996-12-13 2000-11-07 Corning Incorporated Hybrid organic-inorganic planar optical waveguide device
US5842118A (en) 1996-12-18 1998-11-24 Micron Communications, Inc. Communication system including diversity antenna queuing
US6289209B1 (en) 1996-12-18 2001-09-11 Micron Technology, Inc. Wireless communication system, radio frequency communications system, wireless communications method, radio frequency communications method
JPH10195649A (ja) 1996-12-27 1998-07-28 Sony Corp マグネトロンスパッタ装置および半導体装置の製造方法
US5705293A (en) 1997-01-09 1998-01-06 Lockheed Martin Energy Research Corporation Solid state thin film battery having a high temperature lithium alloy anode
US5882812A (en) 1997-01-14 1999-03-16 Polyplus Battery Company, Inc. Overcharge protection systems for rechargeable batteries
US5790489A (en) 1997-01-21 1998-08-04 Dell Usa, L.P. Smart compact disk including a processor and a transmission element
JP4104187B2 (ja) 1997-02-06 2008-06-18 株式会社クレハ 二次電池電極用炭素質材料
US5944964A (en) 1997-02-13 1999-08-31 Optical Coating Laboratory, Inc. Methods and apparatus for preparing low net stress multilayer thin film coatings
JPH10229201A (ja) 1997-02-14 1998-08-25 Sony Corp 薄膜半導体装置の製造方法
JP3345878B2 (ja) 1997-02-17 2002-11-18 株式会社デンソー 電子回路装置の製造方法
US5847865A (en) 1997-02-18 1998-12-08 Regents Of The University Of Minnesota Waveguide optical amplifier
US5970393A (en) 1997-02-25 1999-10-19 Polytechnic University Integrated micro-strip antenna apparatus and a system utilizing the same for wireless communications for sensing and actuation purposes
JP3767151B2 (ja) 1997-02-26 2006-04-19 ソニー株式会社 薄型電池
JP3228168B2 (ja) 1997-02-28 2001-11-12 株式会社豊田中央研究所 回転速度検出装置及びタイヤ発生力検出装置
JPH10302843A (ja) 1997-02-28 1998-11-13 Mitsubishi Electric Corp 電池用接着剤及びそれを用いた電池とその製造法
JP3098204B2 (ja) 1997-03-07 2000-10-16 ティーディーケイ株式会社 光磁気記録用合金ターゲット、その製造方法およびその再生方法
JP2975907B2 (ja) 1997-03-10 1999-11-10 株式会社ワコー 力・加速度・磁気の検出装置
US5952778A (en) 1997-03-18 1999-09-14 International Business Machines Corporation Encapsulated organic light emitting device
JPH10265948A (ja) 1997-03-25 1998-10-06 Rohm Co Ltd 半導体装置用基板およびその製法
ES2156334T3 (es) 1997-03-27 2001-06-16 Tno Guia de ondas plano dopado con erbio.
US6106933A (en) 1997-04-03 2000-08-22 Toray Industries, Inc. Transparent gas barrier biaxially oriented polypropylene film, a laminate film, and a production method thereof
US6242132B1 (en) 1997-04-16 2001-06-05 Ut-Battelle, Llc Silicon-tin oxynitride glassy composition and use as anode for lithium-ion battery
US5948215A (en) 1997-04-21 1999-09-07 Tokyo Electron Limited Method and apparatus for ionized sputtering
DE69802134T2 (de) 1997-04-23 2002-03-07 Hydro-Quebec, Montreal Dünnschicht Feststoff Lithiumzellen und Verfahren zur Herstellung
US6394598B1 (en) 1997-04-28 2002-05-28 Binney & Smith Inc. Ink jet marker
US6422698B2 (en) 1997-04-28 2002-07-23 Binney & Smith Inc. Ink jet marker
US5882721A (en) 1997-05-01 1999-03-16 Imra America Inc Process of manufacturing porous separator for electrochemical power supply
US6329213B1 (en) 1997-05-01 2001-12-11 Micron Technology, Inc. Methods for forming integrated circuits within substrates
JP3290375B2 (ja) 1997-05-12 2002-06-10 松下電器産業株式会社 有機電界発光素子
US5895731A (en) 1997-05-15 1999-04-20 Nelson E. Smith Thin-film lithium battery and process
JP4326041B2 (ja) 1997-05-15 2009-09-02 エフエムシー・コーポレイション ドープされた層間化合物およびその作製方法
US5830330A (en) 1997-05-22 1998-11-03 Tokyo Electron Limited Method and apparatus for low pressure sputtering
US5977582A (en) 1997-05-23 1999-11-02 Lucent Technologies Inc. Capacitor comprising improved TaOx -based dielectric
US6000603A (en) 1997-05-23 1999-12-14 3M Innovative Properties Company Patterned array of metal balls and methods of making
US6316563B2 (en) 1997-05-27 2001-11-13 Showa Denko K.K. Thermopolymerizable composition and use thereof
US6077106A (en) 1997-06-05 2000-06-20 Micron Communications, Inc. Thin profile battery mounting contact for printed circuit boards
US5865860A (en) 1997-06-20 1999-02-02 Imra America, Inc. Process for filling electrochemical cells with electrolyte
KR19990007150A (ko) 1997-06-20 1999-01-25 이데이 노부유끼 전지
US6051114A (en) 1997-06-23 2000-04-18 Applied Materials, Inc. Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition
US5831262A (en) 1997-06-27 1998-11-03 Lucent Technologies Inc. Article comprising an optical fiber attached to a micromechanical device
JP3813740B2 (ja) 1997-07-11 2006-08-23 Tdk株式会社 電子デバイス用基板
US5982144A (en) 1997-07-14 1999-11-09 Johnson Research & Development Company, Inc. Rechargeable battery power supply overcharge protection circuit
JP3335884B2 (ja) 1997-07-16 2002-10-21 株式会社荏原製作所 腐食・防食解析方法
US6046514A (en) 1997-07-25 2000-04-04 3M Innovative Properties Company Bypass apparatus and method for series connected energy storage devices
US5973913A (en) 1997-08-12 1999-10-26 Covalent Associates, Inc. Nonaqueous electrical storage device
KR100250855B1 (ko) 1997-08-28 2000-04-01 손욱 하이브리드 폴리머 전해질, 그 제조 방법 및 이를 사용하여제조한 리튬 전지
US6252564B1 (en) 1997-08-28 2001-06-26 E Ink Corporation Tiled displays
JPH11111273A (ja) 1997-09-29 1999-04-23 Furukawa Battery Co Ltd:The リチウム二次電池用極板の製造法及びリチウム二次電池
WO1999018622A1 (en) 1997-10-07 1999-04-15 Matsushita Electric Industrial Co., Ltd. Non-aqueous electrolyte secondary cell
US5916704A (en) 1997-10-10 1999-06-29 Ultralife Batteries Low pressure battery vent
CA2306384A1 (en) 1997-10-14 1999-04-22 Patterning Technologies Limited Method of forming an electronic device
US6094292A (en) 1997-10-15 2000-07-25 Trustees Of Tufts College Electrochromic window with high reflectivity modulation
US6982132B1 (en) 1997-10-15 2006-01-03 Trustees Of Tufts College Rechargeable thin film battery and method for making the same
US6084285A (en) 1997-10-20 2000-07-04 The Board Of Trustees Of The Leland Stanford Junior University Lateral flux capacitor having fractal-shaped perimeters
US5985484A (en) 1997-10-20 1999-11-16 Amtek Research International Llc Battery separation
EP1023692B1 (en) 1997-10-22 2002-08-28 Cambridge Consultants Limited Portable ic card
US6355378B2 (en) * 1997-10-29 2002-03-12 Sony Corporation Solid state electrolyte cell having at least one electrode impregnated with a solid electrolyte
US5948562A (en) 1997-11-03 1999-09-07 Motorola, Inc. Energy storage device
US6041734A (en) 1997-12-01 2000-03-28 Applied Materials, Inc. Use of an asymmetric waveform to control ion bombardment during substrate processing
US6052397A (en) 1997-12-05 2000-04-18 Sdl, Inc. Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam
US6042965A (en) 1997-12-12 2000-03-28 Johnson Research & Development Company, Inc. Unitary separator and electrode structure and method of manufacturing separator
US5976327A (en) 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
US6120890A (en) 1997-12-12 2000-09-19 Seagate Technology, Inc. Magnetic thin film medium comprising amorphous sealing layer for reduced lithium migration
US6045942A (en) 1997-12-15 2000-04-04 Avery Dennison Corporation Low profile battery and method of making same
JPH11204088A (ja) 1998-01-07 1999-07-30 Toshiba Battery Co Ltd シート形電池
US6019284A (en) 1998-01-27 2000-02-01 Viztec Inc. Flexible chip card with display
US6137671A (en) 1998-01-29 2000-10-24 Energenius, Inc. Embedded energy storage device
US6608470B1 (en) 1998-01-31 2003-08-19 Motorola, Inc. Overcharge protection device and methods for lithium based rechargeable batteries
EP1055020A2 (en) 1998-02-12 2000-11-29 ACM Research, Inc. Plating apparatus and method
US6402795B1 (en) 1998-02-18 2002-06-11 Polyplus Battery Company, Inc. Plating metal negative electrodes under protective coatings
US6753108B1 (en) 1998-02-24 2004-06-22 Superior Micropowders, Llc Energy devices and methods for the fabrication of energy devices
US6223317B1 (en) 1998-02-28 2001-04-24 Micron Technology, Inc. Bit synchronizers and methods of synchronizing and calculating error
US6080508A (en) 1998-03-06 2000-06-27 Electrofuel Inc. Packaging assembly for a lithium battery
US6610440B1 (en) 1998-03-10 2003-08-26 Bipolar Technologies, Inc Microscopic batteries for MEMS systems
US6004660A (en) 1998-03-12 1999-12-21 E.I. Du Pont De Nemours And Company Oxygen barrier composite film structure
US5889383A (en) 1998-04-03 1999-03-30 Advanced Micro Devices, Inc. System and method for charging batteries with ambient acoustic energy
GB9808061D0 (en) 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
US6563998B1 (en) 1999-04-15 2003-05-13 John Farah Polished polymide substrate
US6753114B2 (en) 1998-04-20 2004-06-22 Electrovaya Inc. Composite electrolyte for a rechargeable lithium battery
US6175075B1 (en) 1998-04-21 2001-01-16 Canon Kabushiki Kaisha Solar cell module excelling in reliability
US6169474B1 (en) 1998-04-23 2001-01-02 Micron Technology, Inc. Method of communications in a backscatter system, interrogator, and backscatter communications system
US6324211B1 (en) 1998-04-24 2001-11-27 Micron Technology, Inc. Interrogators communication systems communication methods and methods of processing a communication signal
US6459726B1 (en) 1998-04-24 2002-10-01 Micron Technology, Inc. Backscatter interrogators, communication systems and backscatter communication methods
US6905578B1 (en) 1998-04-27 2005-06-14 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure
US6214061B1 (en) 1998-05-01 2001-04-10 Polyplus Battery Company, Inc. Method for forming encapsulated lithium electrodes having glass protective layers
US6420961B1 (en) 1998-05-14 2002-07-16 Micron Technology, Inc. Wireless communication systems, interfacing devices, communication methods, methods of interfacing with an interrogator, and methods of operating an interrogator
US6075973A (en) 1998-05-18 2000-06-13 Micron Technology, Inc. Method of communications in a backscatter system, interrogator, and backscatter communications system
US6115616A (en) 1998-05-28 2000-09-05 International Business Machines Corporation Hand held telephone set with separable keyboard
DE19824145A1 (de) 1998-05-29 1999-12-16 Siemens Ag Integrierte Antennenanordnung für mobile Telekommunikations-Endgeräte
JP3126698B2 (ja) 1998-06-02 2001-01-22 富士通株式会社 スパッタ成膜方法、スパッタ成膜装置及び半導体装置の製造方法
US6093944A (en) 1998-06-04 2000-07-25 Lucent Technologies Inc. Dielectric materials of amorphous compositions of TI-O2 doped with rare earth elements and devices employing same
US7854684B1 (en) 1998-06-24 2010-12-21 Samsung Electronics Co., Ltd. Wearable device
KR100287176B1 (ko) 1998-06-25 2001-04-16 윤종용 고온산화를이용한반도체소자의커패시터형성방법
US6058233A (en) 1998-06-30 2000-05-02 Lucent Technologies Inc. Waveguide array with improved efficiency for wavelength routers and star couplers in integrated optics
GB9814123D0 (en) 1998-07-01 1998-08-26 British Gas Plc Electrochemical fuel cell
EP0969521A1 (de) 1998-07-03 2000-01-05 ISOVOLTAÖsterreichische IsolierstoffwerkeAktiengesellschaft Fotovoltaischer Modul sowie ein Verfahren zu dessen Herstellung
DE19831719A1 (de) 1998-07-15 2000-01-20 Alcatel Sa Verfahren zur Herstellung planarer Wellenleiterstrukturen sowie Wellenleiterstruktur
JP4745472B2 (ja) 1998-07-16 2011-08-10 株式会社オハラ リチウムイオン伝導性ガラスセラミックスおよびこれを用いた電池、ガスセンサー
US6358810B1 (en) 1998-07-28 2002-03-19 Applied Materials, Inc. Method for superior step coverage and interface control for high K dielectric capacitors and related electrodes
US6146225A (en) 1998-07-30 2000-11-14 Agilent Technologies, Inc. Transparent, flexible permeability barrier for organic electroluminescent devices
US6129277A (en) 1998-08-03 2000-10-10 Privicon, Inc. Card reader for transmission of data by sound
US6579728B2 (en) 1998-08-03 2003-06-17 Privicom, Inc. Fabrication of a high resolution, low profile credit card reader and card reader for transmission of data by sound
US6160373A (en) 1998-08-10 2000-12-12 Dunn; James P. Battery operated cableless external starting device and methods
KR100305903B1 (ko) 1998-08-21 2001-12-17 박호군 수직으로통합연결된박막형전지를구비하는전기및전자소자와그제작방법
JP2000067852A (ja) 1998-08-21 2000-03-03 Pioneer Electronic Corp リチウム二次電池
US6480699B1 (en) 1998-08-28 2002-11-12 Woodtoga Holdings Company Stand-alone device for transmitting a wireless signal containing data from a memory or a sensor
JP3386756B2 (ja) 1998-08-31 2003-03-17 松下電池工業株式会社 薄膜形成方法および薄膜形成装置
US6210832B1 (en) 1998-09-01 2001-04-03 Polyplus Battery Company, Inc. Mixed ionic electronic conductor coatings for redox electrodes
US6192222B1 (en) 1998-09-03 2001-02-20 Micron Technology, Inc. Backscatter communication systems, interrogators, methods of communicating in a backscatter system, and backscatter communication methods
JP4014737B2 (ja) 1998-09-17 2007-11-28 昭和電工株式会社 熱重合性組成物及びその用途
US6236793B1 (en) 1998-09-23 2001-05-22 Molecular Optoelectronics Corporation Optical channel waveguide amplifier
US6362916B2 (en) 1998-09-25 2002-03-26 Fiver Laboratories All fiber gain flattening optical filter
US6159635A (en) 1998-09-29 2000-12-12 Electrofuel Inc. Composite electrode including current collector
KR100283954B1 (ko) 1998-10-13 2001-03-02 윤종용 광증폭기용 광섬유
US7323634B2 (en) 1998-10-14 2008-01-29 Patterning Technologies Limited Method of forming an electronic device
KR100282487B1 (ko) 1998-10-19 2001-02-15 윤종용 고유전 다층막을 이용한 셀 캐패시터 및 그 제조 방법
US6605228B1 (en) 1998-10-19 2003-08-12 Nhk Spring Co., Ltd. Method for fabricating planar optical waveguide devices
EP1043789B1 (en) * 1998-10-22 2013-01-23 Panasonic Corporation Secondary cell having non-aqueous electrolyte
JP4126711B2 (ja) 1998-10-23 2008-07-30 ソニー株式会社 非水電解質電池
JP3830008B2 (ja) 1998-10-30 2006-10-04 ソニー株式会社 非水電解質電池
US6157765A (en) 1998-11-03 2000-12-05 Lucent Technologies Planar waveguide optical amplifier
KR100280705B1 (ko) 1998-11-05 2001-03-02 김순택 리튬 이온 폴리머 전지용 전극 활물질 조성물 및 이를 이용한리튬 이온 폴리머 전지용 전극판의 제조방법
EP1049180A4 (en) 1998-11-06 2004-08-11 Japan Storage Battery Co Ltd NON-AQUEOUS ELECTROLYTIC SECONDARY CELL
DE69932304T2 (de) 1998-11-09 2007-12-06 Ballard Power Systems Inc., Burnaby Elektrische Kontaktvorrichtung für eine Brennstoffzelle
US6384573B1 (en) 1998-11-12 2002-05-07 James Dunn Compact lightweight auxiliary multifunctional reserve battery engine starting system (and methods)
US6117279A (en) 1998-11-12 2000-09-12 Tokyo Electron Limited Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition
JP2000162234A (ja) 1998-11-30 2000-06-16 Matsushita Electric Ind Co Ltd 圧電センサ回路
JP3578015B2 (ja) * 1998-12-03 2004-10-20 住友電気工業株式会社 リチウム二次電池
TW439308B (en) 1998-12-16 2001-06-07 Battelle Memorial Institute Environmental barrier material for organic light emitting device and method of making
US6268695B1 (en) 1998-12-16 2001-07-31 Battelle Memorial Institute Environmental barrier material for organic light emitting device and method of making
JP2000188099A (ja) 1998-12-22 2000-07-04 Mitsubishi Chemicals Corp 薄膜型電池の製造方法
WO2000041256A1 (en) 1999-01-08 2000-07-13 Massachusetts Institute Of Technology Electroactive material for secondary batteries and methods of preparation
GB9900396D0 (en) 1999-01-08 1999-02-24 Danionics As Arrangements of electrochemical cells
JP4074418B2 (ja) 1999-01-11 2008-04-09 三菱化学株式会社 薄膜型リチウム二次電池
US6379835B1 (en) 1999-01-12 2002-04-30 Morgan Adhesives Company Method of making a thin film battery
US6290822B1 (en) 1999-01-26 2001-09-18 Agere Systems Guardian Corp. Sputtering method for forming dielectric films
US6302939B1 (en) 1999-02-01 2001-10-16 Magnequench International, Inc. Rare earth permanent magnet and method for making same
US6306265B1 (en) 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
AU768057B2 (en) 1999-02-25 2003-11-27 Kaneka Corporation Integrated thin-film solar battery
US6210544B1 (en) 1999-03-08 2001-04-03 Alps Electric Co., Ltd. Magnetic film forming method
US6356764B1 (en) 1999-03-09 2002-03-12 Micron Technology, Inc. Wireless communication systems, interrogators and methods of communicating within a wireless communication system
US6603391B1 (en) 1999-03-09 2003-08-05 Micron Technology, Inc. Phase shifters, interrogators, methods of shifting a phase angle of a signal, and methods of operating an interrogator
EP1037293B1 (en) 1999-03-16 2007-05-16 Sumitomo Chemical Company, Limited Non-aqueous electrolyte and lithium secondary battery using the same
US6277520B1 (en) 1999-03-19 2001-08-21 Ntk Powerdex, Inc. Thin lithium battery with slurry cathode
US6280875B1 (en) 1999-03-24 2001-08-28 Teledyne Technologies Incorporated Rechargeable battery structure with metal substrate
ES2198833T3 (es) 1999-03-25 2004-02-01 Kaneka Corporation Procedimiento de fabricacion de modulos de celulas solares de capa fina.
US6160215A (en) 1999-03-26 2000-12-12 Curtin; Lawrence F. Method of making photovoltaic device
US6148503A (en) 1999-03-31 2000-11-21 Imra America, Inc. Process of manufacturing porous separator for electrochemical power supply
US6398824B1 (en) 1999-04-02 2002-06-04 Excellatron Solid State, Llc Method for manufacturing a thin-film lithium battery by direct deposition of battery components on opposite sides of a current collector
US6168884B1 (en) 1999-04-02 2001-01-02 Lockheed Martin Energy Research Corporation Battery with an in-situ activation plated lithium anode
US6242129B1 (en) 1999-04-02 2001-06-05 Excellatron Solid State, Llc Thin lithium film battery
WO2000062365A1 (en) 1999-04-14 2000-10-19 Power Paper Ltd. Functionally improved battery and method of making same
US6855441B1 (en) 1999-04-14 2005-02-15 Power Paper Ltd. Functionally improved battery and method of making same
US6416598B1 (en) 1999-04-20 2002-07-09 Reynolds Metals Company Free machining aluminum alloy with high melting point machining constituent and method of use
KR100296741B1 (ko) 1999-05-11 2001-07-12 박호군 트렌치 구조를 갖는 전지 및 그 제조방법
US6281142B1 (en) 1999-06-04 2001-08-28 Micron Technology, Inc. Dielectric cure for reducing oxygen vacancies
JP3736205B2 (ja) 1999-06-04 2006-01-18 三菱電機株式会社 バッテリ蓄電装置
US6046081A (en) 1999-06-10 2000-04-04 United Microelectronics Corp. Method for forming dielectric layer of capacitor
US6133670A (en) 1999-06-24 2000-10-17 Sandia Corporation Compact electrostatic comb actuator
US6413676B1 (en) 1999-06-28 2002-07-02 Lithium Power Technologies, Inc. Lithium ion polymer electrolytes
JP4505886B2 (ja) * 1999-06-29 2010-07-21 ソニー株式会社 固体電解質電池
JP2001020065A (ja) 1999-07-07 2001-01-23 Hitachi Metals Ltd スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料
JP2001021744A (ja) 1999-07-07 2001-01-26 Shin Etsu Chem Co Ltd 光導波路基板の製造方法
JP2001025666A (ja) 1999-07-14 2001-01-30 Nippon Sheet Glass Co Ltd 積層体およびその製造方法
US6290821B1 (en) 1999-07-15 2001-09-18 Seagate Technology Llc Sputter deposition utilizing pulsed cathode and substrate bias power
KR100456647B1 (ko) 1999-08-05 2004-11-10 에스케이씨 주식회사 리튬 이온 폴리머 전지
US6344795B1 (en) 1999-08-17 2002-02-05 Lucent Technologies Inc. Method and apparatus for generating temperature based alerting signals
US6249222B1 (en) 1999-08-17 2001-06-19 Lucent Technologies Inc. Method and apparatus for generating color based alerting signals
US6414626B1 (en) 1999-08-20 2002-07-02 Micron Technology, Inc. Interrogators, wireless communication systems, methods of operating an interrogator, methods of operating a wireless communication system, and methods of determining range of a remote communication device
US6356230B1 (en) 1999-08-20 2002-03-12 Micron Technology, Inc. Interrogators, wireless communication systems, methods of operating an interrogator, methods of monitoring movement of a radio frequency identification device, methods of monitoring movement of a remote communication device and movement monitoring methods
US6537428B1 (en) 1999-09-02 2003-03-25 Veeco Instruments, Inc. Stable high rate reactive sputtering
US6645675B1 (en) 1999-09-02 2003-11-11 Lithium Power Technologies, Inc. Solid polymer electrolytes
US6664006B1 (en) 1999-09-02 2003-12-16 Lithium Power Technologies, Inc. All-solid-state electrochemical device and method of manufacturing
US6392565B1 (en) 1999-09-10 2002-05-21 Eworldtrack, Inc. Automobile tracking and anti-theft system
US6528212B1 (en) 1999-09-13 2003-03-04 Sanyo Electric Co., Ltd. Lithium battery
US6344366B1 (en) 1999-09-15 2002-02-05 Lockheed Martin Energy Research Corporation Fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing
US6296949B1 (en) 1999-09-16 2001-10-02 Ga-Tek Inc. Copper coated polyimide with metallic protective layer
JP4240679B2 (ja) 1999-09-21 2009-03-18 ソニー株式会社 スパッタリング用ターゲットの製造方法
US6296967B1 (en) 1999-09-24 2001-10-02 Electrofuel Inc. Lithium battery structure incorporating lithium pouch cells
TW457767B (en) 1999-09-27 2001-10-01 Matsushita Electric Works Ltd Photo response semiconductor switch having short circuit load protection
JP4460742B2 (ja) 1999-10-01 2010-05-12 日本碍子株式会社 圧電/電歪デバイス及びその製造方法
US6368275B1 (en) 1999-10-07 2002-04-09 Acuson Corporation Method and apparatus for diagnostic medical information gathering, hyperthermia treatment, or directed gene therapy
DE19948839A1 (de) 1999-10-11 2001-04-12 Bps Alzenau Gmbh Leitende transparente Schichten und Verfahren zu ihrer Herstellung
US6500287B1 (en) 1999-10-14 2002-12-31 Forskarpatent I Uppsala Ab Color-modifying treatment of thin films
US6413645B1 (en) 2000-04-20 2002-07-02 Battelle Memorial Institute Ultrabarrier substrates
US6548912B1 (en) 1999-10-25 2003-04-15 Battelle Memorial Institute Semicoductor passivation using barrier coatings
US7198832B2 (en) 1999-10-25 2007-04-03 Vitex Systems, Inc. Method for edge sealing barrier films
US6573652B1 (en) 1999-10-25 2003-06-03 Battelle Memorial Institute Encapsulated display devices
US6623861B2 (en) 2001-04-16 2003-09-23 Battelle Memorial Institute Multilayer plastic substrates
US6866901B2 (en) 1999-10-25 2005-03-15 Vitex Systems, Inc. Method for edge sealing barrier films
US20070196682A1 (en) 1999-10-25 2007-08-23 Visser Robert J Three dimensional multilayer barrier and method of making
US6529827B1 (en) 1999-11-01 2003-03-04 Garmin Corporation GPS device with compass and altimeter and method for displaying navigation information
US6413285B1 (en) 1999-11-01 2002-07-02 Polyplus Battery Company Layered arrangements of lithium electrodes
US6413284B1 (en) 1999-11-01 2002-07-02 Polyplus Battery Company Encapsulated lithium alloy electrodes having barrier layers
US6271793B1 (en) 1999-11-05 2001-08-07 International Business Machines Corporation Radio frequency (RF) transponder (Tag) with composite antenna
JP2003514352A (ja) 1999-11-11 2003-04-15 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ゲル電解質を含むリチウム電池
US6340880B1 (en) 1999-11-11 2002-01-22 Mitsumi Electric Co., Ltd. Method of protecting a chargeable electric cell
JP3999424B2 (ja) 1999-11-16 2007-10-31 ローム株式会社 端子基板、端子基板を備えた電池パック、および端子基板の製造方法
US6511516B1 (en) 2000-02-23 2003-01-28 Johnson Research & Development Co., Inc. Method and apparatus for producing lithium based cathodes
US6797428B1 (en) 1999-11-23 2004-09-28 Moltech Corporation Lithium anodes for electrochemical cells
US6582481B1 (en) 1999-11-23 2003-06-24 Johnson Research & Development Company, Inc. Method of producing lithium base cathodes
US7247408B2 (en) 1999-11-23 2007-07-24 Sion Power Corporation Lithium anodes for electrochemical cells
US6733924B1 (en) 1999-11-23 2004-05-11 Moltech Corporation Lithium anodes for electrochemical cells
US6350353B2 (en) 1999-11-24 2002-02-26 Applied Materials, Inc. Alternate steps of IMP and sputtering process to improve sidewall coverage
US6426863B1 (en) 1999-11-25 2002-07-30 Lithium Power Technologies, Inc. Electrochemical capacitor
US6294288B1 (en) 1999-12-01 2001-09-25 Valence Technology, Inc. Battery cell having notched layers
WO2001040836A1 (en) 1999-12-02 2001-06-07 Gemfire Corporation Photodefinition of optical devices
US6344419B1 (en) 1999-12-03 2002-02-05 Applied Materials, Inc. Pulsed-mode RF bias for sidewall coverage improvement
JP3611765B2 (ja) 1999-12-09 2005-01-19 シャープ株式会社 二次電池及びそれを用いた電子機器
JP2001176464A (ja) 1999-12-17 2001-06-29 Sumitomo Electric Ind Ltd 非水電解質電池
US6426163B1 (en) 1999-12-21 2002-07-30 Alcatel Electrochemical cell
JP2001171812A (ja) 1999-12-22 2001-06-26 Tokyo Gas Co Ltd 岩盤内貯蔵施設およびその施工方法
US6534809B2 (en) 1999-12-22 2003-03-18 Agilent Technologies, Inc. Hardmask designs for dry etching FeRAM capacitor stacks
US6576546B2 (en) 1999-12-22 2003-06-10 Texas Instruments Incorporated Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications
CN1307376A (zh) 2000-01-27 2001-08-08 钟馨稼 一种可反复充放电的铬氟锂固体动力电池
US6372383B1 (en) 2000-01-31 2002-04-16 Korea Advanced Institute Of Science And Technology Method for preparing electrodes for Ni/Metal hydride secondary cells using Cu
US6627056B2 (en) 2000-02-16 2003-09-30 Applied Materials, Inc. Method and apparatus for ionized plasma deposition
TW523615B (en) 2000-02-17 2003-03-11 L3 Optics Inc Guided wave optical switch based on an active semiconductor amplifier and a passive optical component
DE60133453T2 (de) 2000-02-18 2009-05-07 Cypak Ab Verfahren und vorrichtung zur identifizierung und authentisierung
JP3706521B2 (ja) 2000-02-22 2005-10-12 三洋電機株式会社 リチウム二次電池
WO2001065615A2 (en) 2000-02-23 2001-09-07 Sri International Biologically powered electroactive polymer generators
TW584905B (en) 2000-02-25 2004-04-21 Tokyo Electron Ltd Method and apparatus for depositing films
US6410471B2 (en) 2000-03-07 2002-06-25 Shin-Etsu Chemical Co., Ltd. Method for preparation of sintered body of rare earth oxide
EA200200879A1 (ru) 2000-03-09 2003-02-27 Изовольта Ёстеррайхише Изолирштоффверке Акциенгезельшафт Способ получения фотогальванического тонкопленочного элемента
FR2806198B1 (fr) 2000-03-13 2003-08-15 Sagem Dispositif radio d'echange d'informations
JP2003527015A (ja) 2000-03-15 2003-09-09 アスラブ・エス アー 小さい容積の機器用の多周波式アンテナ
JP2001259494A (ja) 2000-03-17 2001-09-25 Matsushita Battery Industrial Co Ltd 薄膜形成方法
US6805998B2 (en) 2000-03-24 2004-10-19 Cymbet Corporation Method and apparatus for integrated-battery devices
US6387563B1 (en) 2000-03-28 2002-05-14 Johnson Research & Development, Inc. Method of producing a thin film battery having a protective packaging
JP4106644B2 (ja) 2000-04-04 2008-06-25 ソニー株式会社 電池およびその製造方法
US6423106B1 (en) 2000-04-05 2002-07-23 Johnson Research & Development Method of producing a thin film battery anode
US6709778B2 (en) 2000-04-10 2004-03-23 Johnson Electro Mechanical Systems, Llc Electrochemical conversion system
GB2361244B (en) 2000-04-14 2004-02-11 Trikon Holdings Ltd A method of depositing dielectric
US6365319B1 (en) 2000-04-20 2002-04-02 Eastman Kodak Company Self-contained imaging media comprising opaque laminated support
US20010052752A1 (en) 2000-04-25 2001-12-20 Ghosh Amalkumar P. Thin film encapsulation of organic light emitting diode devices
KR100341407B1 (ko) 2000-05-01 2002-06-22 윤덕용 플라즈마 처리에 의한 리튬전이금속 산화물 박막의 결정화방법
US6433465B1 (en) 2000-05-02 2002-08-13 The United States Of America As Represented By The Secretary Of The Navy Energy-harvesting device using electrostrictive polymers
US6423776B1 (en) 2000-05-02 2002-07-23 Honeywell International Inc. Oxygen scavenging high barrier polyamide compositions for packaging applications
US6760520B1 (en) 2000-05-09 2004-07-06 Teralux Corporation System and method for passively aligning and coupling optical devices
US6261917B1 (en) 2000-05-09 2001-07-17 Chartered Semiconductor Manufacturing Ltd. High-K MOM capacitor
US6384473B1 (en) 2000-05-16 2002-05-07 Sandia Corporation Microelectronic device package with an integral window
JP4432206B2 (ja) 2000-05-18 2010-03-17 株式会社ブリヂストン 積層膜の形成方法
US6436156B1 (en) 2000-05-25 2002-08-20 The Gillette Company Zinc/air cell
EP1160900A3 (en) 2000-05-26 2007-12-12 Kabushiki Kaisha Riken Embossed current collector separator for electrochemical fuel cell
US6284406B1 (en) 2000-06-09 2001-09-04 Ntk Powerdex, Inc. IC card with thin battery
US6524750B1 (en) 2000-06-17 2003-02-25 Eveready Battery Company, Inc. Doped titanium oxide additives
US6432577B1 (en) 2000-06-29 2002-08-13 Sandia Corporation Apparatus and method for fabricating a microbattery
JP2002026173A (ja) 2000-07-10 2002-01-25 Fuji Photo Film Co Ltd Ic装置、基板、およびic組付基板
US20040247921A1 (en) 2000-07-18 2004-12-09 Dodsworth Robert S. Etched dielectric film in hard disk drives
US6524466B1 (en) 2000-07-18 2003-02-25 Applied Semiconductor, Inc. Method and system of preventing fouling and corrosion of biomedical devices and structures
KR100336407B1 (ko) 2000-07-19 2002-05-10 박호군 박막 전지를 위한 전해질용 리튬인산염 스퍼터링 타겟제조방법
JP3608507B2 (ja) 2000-07-19 2005-01-12 住友電気工業株式会社 アルカリ金属薄膜部材の製造方法
US20020110733A1 (en) 2000-08-07 2002-08-15 Johnson Lonnie G. Systems and methods for producing multilayer thin film energy storage devices
US6506289B2 (en) 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
US6402796B1 (en) 2000-08-07 2002-06-11 Excellatron Solid State, Llc Method of producing a thin film battery
US6538211B2 (en) 2000-08-15 2003-03-25 World Properties, Inc. Multi-layer circuits and methods of manufacture thereof
US6572173B2 (en) 2000-08-28 2003-06-03 Mueller Hermann-Frank Sun shield for vehicles
KR100387121B1 (ko) 2000-08-31 2003-06-12 주식회사 애니셀 수직 방향으로 집적된 다층 박막전지 및 그의 제조방법
US6866963B2 (en) 2000-09-04 2005-03-15 Samsung Sdi Co., Ltd. Cathode active material and lithium battery employing the same
US7056620B2 (en) 2000-09-07 2006-06-06 Front Edge Technology, Inc. Thin film battery and method of manufacture
US6632563B1 (en) 2000-09-07 2003-10-14 Front Edge Technology, Inc. Thin film battery and method of manufacture
CA2422212A1 (en) 2000-09-14 2003-03-13 Ulf Zum Felde Electrochemically activatable layer or film
US6628876B1 (en) 2000-09-15 2003-09-30 Triquint Technology Holding Co. Method for making a planar waveguide
TW448318B (en) 2000-09-18 2001-08-01 Nat Science Council Erbium, Yttrium co-doped Titanium oxide thin film material for planar optical waveguide amplifier
DE10165080B4 (de) 2000-09-20 2015-05-13 Hitachi Metals, Ltd. Siliciumnitrid-Pulver und -Sinterkörper sowie Verfahren zu deren Herstellung und Leiterplatte damit
US6637916B2 (en) 2000-10-05 2003-10-28 Muellner Hermann-Frank Lamp for vehicles
TW513822B (en) * 2000-10-06 2002-12-11 Sony Corp Method for producing cathode active material and method for producing non-aqueous electrolyte cell
US6660660B2 (en) 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
JP4532713B2 (ja) 2000-10-11 2010-08-25 東洋鋼鈑株式会社 多層金属積層フィルム及びその製造方法
KR100389655B1 (ko) 2000-10-14 2003-06-27 삼성에스디아이 주식회사 우수한 사이클링 안정성과 높은 이온 전도도를 갖는리튬-이온 이차 박막 전지
US6622049B2 (en) 2000-10-16 2003-09-16 Remon Medical Technologies Ltd. Miniature implantable illuminator for photodynamic therapy
US6488822B1 (en) 2000-10-20 2002-12-03 Veecoleve, Inc. Segmented-target ionized physical-vapor deposition apparatus and method of operation
US6525976B1 (en) 2000-10-24 2003-02-25 Excellatron Solid State, Llc Systems and methods for reducing noise in mixed-mode integrated circuits
JP2002140776A (ja) 2000-11-01 2002-05-17 Matsushita Electric Ind Co Ltd 人体状態検出装置及び人体状態確認システム
US6863699B1 (en) 2000-11-03 2005-03-08 Front Edge Technology, Inc. Sputter deposition of lithium phosphorous oxynitride material
US6413382B1 (en) 2000-11-03 2002-07-02 Applied Materials, Inc. Pulsed sputtering with a small rotating magnetron
JP3812324B2 (ja) 2000-11-06 2006-08-23 日本電気株式会社 リチウム二次電池とその製造方法
US6494999B1 (en) 2000-11-09 2002-12-17 Honeywell International Inc. Magnetron sputtering apparatus with an integral cooling and pressure relieving cathode
DE60129196T2 (de) 2000-11-18 2007-10-11 Samsung SDI Co., Ltd., Suwon Dünnschicht Anode für Lithium enthaltende Sekundärbatterie
KR100389908B1 (ko) 2000-11-18 2003-07-04 삼성에스디아이 주식회사 리튬 2차 전지용 음극 박막
US6517964B2 (en) 2000-11-30 2003-02-11 Graftech Inc. Catalyst support material for fuel cell
US20020106297A1 (en) 2000-12-01 2002-08-08 Hitachi Metals, Ltd. Co-base target and method of producing the same
NL1016779C2 (nl) 2000-12-02 2002-06-04 Cornelis Johannes Maria V Rijn Matrijs, werkwijze voor het vervaardigen van precisieproducten met behulp van een matrijs, alsmede precisieproducten, in het bijzonder microzeven en membraanfilters, vervaardigd met een dergelijke matrijs.
JP4461656B2 (ja) 2000-12-07 2010-05-12 セイコーエプソン株式会社 光電変換素子
US20020071989A1 (en) 2000-12-08 2002-06-13 Verma Surrenda K. Packaging systems and methods for thin film solid state batteries
US20020091929A1 (en) 2000-12-19 2002-07-11 Jakob Ehrensvard Secure digital signing of data
US6444336B1 (en) 2000-12-21 2002-09-03 The Regents Of The University Of California Thin film dielectric composite materials
WO2002050933A2 (en) 2000-12-21 2002-06-27 Moltech Corporation Lithium anodes for electrochemical cells
US6620545B2 (en) 2001-01-05 2003-09-16 Visteon Global Technologies, Inc. ETM based battery
US6650000B2 (en) 2001-01-16 2003-11-18 International Business Machines Corporation Apparatus and method for forming a battery in an integrated circuit
US6533907B2 (en) 2001-01-19 2003-03-18 Symmorphix, Inc. Method of producing amorphous silicon for hard mask and waveguide applications
US6673716B1 (en) 2001-01-30 2004-01-06 Novellus Systems, Inc. Control of the deposition temperature to reduce the via and contact resistance of Ti and TiN deposited using ionized PVD techniques
US6558836B1 (en) 2001-02-08 2003-05-06 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Structure of thin-film lithium microbatteries
US6589299B2 (en) 2001-02-13 2003-07-08 3M Innovative Properties Company Method for making electrode
WO2002071506A1 (en) 2001-02-15 2002-09-12 Emagin Corporation Thin film encapsulation of organic light emitting diode devices
US20020139662A1 (en) 2001-02-21 2002-10-03 Lee Brent W. Thin-film deposition of low conductivity targets using cathodic ARC plasma process
US20020164441A1 (en) 2001-03-01 2002-11-07 The University Of Chicago Packaging for primary and secondary batteries
US7048400B2 (en) 2001-03-22 2006-05-23 Lumimove, Inc. Integrated illumination system
US7164206B2 (en) 2001-03-28 2007-01-16 Intel Corporation Structure in a microelectronic device including a bi-layer for a diffusion barrier and an etch-stop layer
US6797137B2 (en) 2001-04-11 2004-09-28 Heraeus, Inc. Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal
US7595109B2 (en) 2001-04-12 2009-09-29 Eestor, Inc. Electrical-energy-storage unit (EESU) utilizing ceramic and integrated-circuit technologies for replacement of electrochemical batteries
US7914755B2 (en) 2001-04-12 2011-03-29 Eestor, Inc. Method of preparing ceramic powders using chelate precursors
US7033406B2 (en) 2001-04-12 2006-04-25 Eestor, Inc. Electrical-energy-storage unit (EESU) utilizing ceramic and integrated-circuit technologies for replacement of electrochemical batteries
US6677070B2 (en) 2001-04-19 2004-01-13 Hewlett-Packard Development Company, L.P. Hybrid thin film/thick film solid oxide fuel cell and method of manufacturing the same
US6782290B2 (en) 2001-04-27 2004-08-24 Medtronic, Inc. Implantable medical device with rechargeable thin-film microbattery power source
US7744735B2 (en) 2001-05-04 2010-06-29 Tokyo Electron Limited Ionized PVD with sequential deposition and etching
US6743488B2 (en) 2001-05-09 2004-06-01 Cpfilms Inc. Transparent conductive stratiform coating of indium tin oxide
JP2002344115A (ja) 2001-05-16 2002-11-29 Matsushita Electric Ind Co Ltd 成膜方法及びプリント基板の製造方法
US6650942B2 (en) 2001-05-30 2003-11-18 Medtronic, Inc. Implantable medical device with dual cell power source
US6517968B2 (en) 2001-06-11 2003-02-11 Excellatron Solid State, Llc Thin lithium film battery
US6752842B2 (en) 2001-06-18 2004-06-22 Power Paper Ltd. Manufacture of flexible thin layer electrochemical cell
US7527938B2 (en) 2001-06-19 2009-05-05 R.E.D. Laboratories N.V./S.A. Methods for diagnosis and treatment of chronic immune diseases
JP3737389B2 (ja) 2001-06-19 2006-01-18 京セラ株式会社 バッテリー
JP4183401B2 (ja) 2001-06-28 2008-11-19 三洋電機株式会社 リチウム二次電池用電極の製造方法及びリチウム二次電池
JP3929839B2 (ja) 2001-06-28 2007-06-13 松下電器産業株式会社 電池及び電池パック
US6768855B1 (en) 2001-07-05 2004-07-27 Sandia Corporation Vertically-tapered optical waveguide and optical spot transformer formed therefrom
US7469558B2 (en) 2001-07-10 2008-12-30 Springworks, Llc As-deposited planar optical waveguides with low scattering loss and methods for their manufacture
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US6758404B2 (en) 2001-08-03 2004-07-06 General Instrument Corporation Media cipher smart card
US7022431B2 (en) 2001-08-20 2006-04-04 Power Paper Ltd. Thin layer electrochemical cell with self-formed separator
US7335441B2 (en) 2001-08-20 2008-02-26 Power Paper Ltd. Thin layer electrochemical cell with self-formed separator
US6500676B1 (en) 2001-08-20 2002-12-31 Honeywell International Inc. Methods and apparatus for depositing magnetic films
CA2426641C (en) 2001-08-24 2010-10-26 Dai Nippon Printing Co., Ltd. Multi-face forming mask device for vacuum deposition
KR100382767B1 (ko) 2001-08-25 2003-05-09 삼성에스디아이 주식회사 리튬 2차 전지용 음극 박막 및 그의 제조방법
JP4108602B2 (ja) 2001-08-28 2008-06-25 Tdk株式会社 薄膜容量素子用組成物、高誘電率絶縁膜、薄膜容量素子および薄膜積層コンデンサ
EP1359636A1 (en) 2001-09-03 2003-11-05 Matsushita Electric Industrial Co., Ltd. Method for manufacturing electrochemical device
US7118825B2 (en) 2001-09-05 2006-10-10 Omnitek Partners Llc Conformal power supplies
US6637906B2 (en) 2001-09-11 2003-10-28 Recot, Inc. Electroluminescent flexible film for product packaging
TW560102B (en) 2001-09-12 2003-11-01 Itn Energy Systems Inc Thin-film electrochemical devices on fibrous or ribbon-like substrates and methd for their manufacture and design
WO2003022564A1 (en) 2001-09-12 2003-03-20 Itn Energy Systems, Inc. Apparatus and method for the design and manufacture of multifunctional composite materials with power integration
US6838209B2 (en) 2001-09-21 2005-01-04 Eveready Battery Company, Inc. Flexible thin battery and method of manufacturing same
CA2406500C (en) 2001-10-01 2008-04-01 Research In Motion Limited An over-voltage protection circuit for use in a charging circuit
US7115516B2 (en) 2001-10-09 2006-10-03 Applied Materials, Inc. Method of depositing a material layer
JP2003124491A (ja) 2001-10-15 2003-04-25 Sharp Corp 薄膜太陽電池モジュール
JP4015835B2 (ja) 2001-10-17 2007-11-28 松下電器産業株式会社 半導体記憶装置
US6666982B2 (en) 2001-10-22 2003-12-23 Tokyo Electron Limited Protection of dielectric window in inductively coupled plasma generation
FR2831318B1 (fr) 2001-10-22 2006-06-09 Commissariat Energie Atomique Dispositif de stockage d'energie a recharge rapide, sous forme de films minces
US6750156B2 (en) 2001-10-24 2004-06-15 Applied Materials, Inc. Method and apparatus for forming an anti-reflective coating on a substrate
KR100424637B1 (ko) 2001-10-25 2004-03-24 삼성에스디아이 주식회사 리튬 이차 전지용 박막 전극 및 그 제조방법
US7404877B2 (en) 2001-11-09 2008-07-29 Springworks, Llc Low temperature zirconia based thermal barrier layer by PVD
US6805999B2 (en) * 2001-11-13 2004-10-19 Midwest Research Institute Buried anode lithium thin film battery and process for forming the same
KR100425585B1 (ko) 2001-11-22 2004-04-06 한국전자통신연구원 가교 고분자 보호박막을 갖춘 리튬 고분자 이차 전지 및그 제조 방법
US20030097858A1 (en) 2001-11-26 2003-05-29 Christof Strohhofer Silver sensitized erbium ion doped planar waveguide amplifier
US6830846B2 (en) 2001-11-29 2004-12-14 3M Innovative Properties Company Discontinuous cathode sheet halfcell web
US20030109903A1 (en) 2001-12-12 2003-06-12 Epic Biosonics Inc. Low profile subcutaneous enclosure
US6683749B2 (en) 2001-12-19 2004-01-27 Storage Technology Corporation Magnetic transducer having inverted write element with zero delta in pole tip width
JP2003208919A (ja) 2002-01-15 2003-07-25 Idemitsu Petrochem Co Ltd リチウムイオン伝導性硫化物ガラス及びガラスセラミックスの製造方法並びに該ガラスセラミックスを用いた全固体型電池
US6737789B2 (en) 2002-01-18 2004-05-18 Leon J. Radziemski Force activated, piezoelectric, electricity generation, storage, conditioning and supply apparatus and methods
US20040081415A1 (en) 2002-01-22 2004-04-29 Demaray Richard E. Planar optical waveguide amplifier with mode size converter
US20030143853A1 (en) 2002-01-31 2003-07-31 Celii Francis G. FeRAM capacitor stack etch
DE10204138B4 (de) 2002-02-01 2004-05-13 Robert Bosch Gmbh Kommunikationsgerät
US20030152829A1 (en) 2002-02-12 2003-08-14 Ji-Guang Zhang Thin lithium film battery
JP3565207B2 (ja) 2002-02-27 2004-09-15 日産自動車株式会社 電池パック
US6713987B2 (en) 2002-02-28 2004-03-30 Front Edge Technology, Inc. Rechargeable battery having permeable anode current collector
US7081693B2 (en) 2002-03-07 2006-07-25 Microstrain, Inc. Energy harvesting for wireless sensor operation and data transmission
US20030174391A1 (en) 2002-03-16 2003-09-18 Tao Pan Gain flattened optical amplifier
US6884327B2 (en) 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US7378356B2 (en) 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
US20030175142A1 (en) 2002-03-16 2003-09-18 Vassiliki Milonopoulou Rare-earth pre-alloyed PVD targets for dielectric planar applications
US6885028B2 (en) 2002-03-25 2005-04-26 Sharp Kabushiki Kaisha Transistor array and active-matrix substrate
TWI283031B (en) 2002-03-25 2007-06-21 Epistar Corp Method for integrating compound semiconductor with substrate of high thermal conductivity
JP2003282142A (ja) 2002-03-26 2003-10-03 Matsushita Electric Ind Co Ltd 薄膜積層体、薄膜電池、コンデンサ、及び薄膜積層体の製造方法と製造装置
US6792026B2 (en) 2002-03-26 2004-09-14 Joseph Reid Henrichs Folded cavity solid-state laser
US7208195B2 (en) 2002-03-27 2007-04-24 Ener1Group, Inc. Methods and apparatus for deposition of thin films
KR100454092B1 (ko) 2002-04-29 2004-10-26 광주과학기술원 급속 열처리법을 이용한 박막전지용 양극박막의 제조방법
US6949389B2 (en) 2002-05-02 2005-09-27 Osram Opto Semiconductors Gmbh Encapsulation for organic light emitting diodes devices
DE10318187B4 (de) 2002-05-02 2010-03-18 Osram Opto Semiconductors Gmbh Verkapselungsverfahren für organische Leuchtdiodenbauelemente
JP4053819B2 (ja) 2002-05-30 2008-02-27 株式会社オハラ リチウムイオン二次電池
JP4043296B2 (ja) 2002-06-13 2008-02-06 松下電器産業株式会社 全固体電池
US6700491B2 (en) 2002-06-14 2004-03-02 Sensormatic Electronics Corporation Radio frequency identification tag with thin-film battery for antenna
US6780208B2 (en) 2002-06-28 2004-08-24 Hewlett-Packard Development Company, L.P. Method of making printed battery structures
US7410730B2 (en) 2002-07-09 2008-08-12 Oak Ridge Micro-Energy, Inc. Thin film battery and electrolyte therefor
US6818356B1 (en) 2002-07-09 2004-11-16 Oak Ridge Micro-Energy, Inc. Thin film battery and electrolyte therefor
US7362659B2 (en) 2002-07-11 2008-04-22 Action Manufacturing Company Low current microcontroller circuit
US6835493B2 (en) 2002-07-26 2004-12-28 Excellatron Solid State, Llc Thin film battery
US6770176B2 (en) 2002-08-02 2004-08-03 Itn Energy Systems. Inc. Apparatus and method for fracture absorption layer
JP2004071305A (ja) 2002-08-05 2004-03-04 Hitachi Maxell Ltd 非水電解質二次電池
JP3729164B2 (ja) 2002-08-05 2005-12-21 日産自動車株式会社 自動車用電池
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US6916679B2 (en) 2002-08-09 2005-07-12 Infinite Power Solutions, Inc. Methods of and device for encapsulation and termination of electronic devices
US20080003496A1 (en) 2002-08-09 2008-01-03 Neudecker Bernd J Electrochemical apparatus with barrier layer protected substrate
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
KR20040017478A (ko) 2002-08-21 2004-02-27 한국과학기술원 인쇄회로기판의 제조방법 및 다층 인쇄회로기판
TWI274199B (en) 2002-08-27 2007-02-21 Symmorphix Inc Optically coupling into highly uniform waveguides
US20040048157A1 (en) 2002-09-11 2004-03-11 Neudecker Bernd J. Lithium vanadium oxide thin-film battery
US6994933B1 (en) 2002-09-16 2006-02-07 Oak Ridge Micro-Energy, Inc. Long life thin film battery and method therefor
JP4614625B2 (ja) 2002-09-30 2011-01-19 三洋電機株式会社 リチウム二次電池の製造方法
US7282302B2 (en) 2002-10-15 2007-10-16 Polyplus Battery Company Ionically conductive composites for protection of active metal anodes
US20040081860A1 (en) 2002-10-29 2004-04-29 Stmicroelectronics, Inc. Thin-film battery equipment
JP2004149849A (ja) 2002-10-30 2004-05-27 Hitachi Chem Co Ltd 金属薄膜の形成方法及び電極付基板
US20040085002A1 (en) 2002-11-05 2004-05-06 Pearce Michael Baker Method and apparatus for an incidental use piezoelectric energy source with thin-film battery
JP2004158268A (ja) 2002-11-06 2004-06-03 Sony Corp 成膜装置
JP2006505973A (ja) 2002-11-07 2006-02-16 フラクタス・ソシエダッド・アノニマ 微小アンテナを含む集積回路パッケージ
KR100575329B1 (ko) 2002-11-27 2006-05-02 마쯔시다덴기산교 가부시키가이샤 고체전해질 및 그것을 사용한 전고체전지
KR100682883B1 (ko) 2002-11-27 2007-02-15 삼성전자주식회사 고체 전해질, 그의 제조방법 및 이를 채용한 리튬전지 및 박막전지
JP4777593B2 (ja) 2002-11-29 2011-09-21 株式会社オハラ リチウムイオン二次電池の製造方法
DE50305946D1 (de) 2002-12-16 2007-01-25 Basf Ag Verfahren zur Gewinnung von Lithium
JP4145647B2 (ja) * 2002-12-27 2008-09-03 東芝電池株式会社 リチウム二次電池およびその製造方法
TWI261045B (en) 2002-12-30 2006-09-01 Ind Tech Res Inst Composite nanofibers and their fabrications
EP1590823A4 (en) 2003-01-02 2007-05-30 Cymbet Corp BATTERY DRIVEN SOLID BODIES AND MANUFACTURING METHOD
US6906436B2 (en) 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
TWI341337B (en) 2003-01-07 2011-05-01 Cabot Corp Powder metallurgy sputtering targets and methods of producing same
US20040135160A1 (en) 2003-01-10 2004-07-15 Eastman Kodak Company OLED device
IL153895A (en) 2003-01-12 2013-01-31 Orion Solar Systems Ltd Solar cell device
KR100513726B1 (ko) 2003-01-30 2005-09-08 삼성전자주식회사 고체 전해질, 이를 채용한 전지 및 그 고체 전해질의 제조방법
DE10304824A1 (de) 2003-01-31 2004-08-12 Varta Microbattery Gmbh Dünne elektronische Chipkarte
RU2241281C2 (ru) 2003-02-10 2004-11-27 Институт химии и химической технологии СО РАН Способ получения тонких пленок кобальтата лития
JP2004273436A (ja) 2003-02-18 2004-09-30 Matsushita Electric Ind Co Ltd 全固体薄膜積層電池
CN1756856B (zh) 2003-02-27 2011-10-12 希莫菲克斯公司 电介质阻挡层膜
US6936407B2 (en) 2003-02-28 2005-08-30 Osram Opto Semiconductors Gmbh Thin-film electronic device module
KR100590376B1 (ko) 2003-03-20 2006-06-19 마쯔시다덴기산교 가부시키가이샤 집합전지
CN1274052C (zh) 2003-03-21 2006-09-06 比亚迪股份有限公司 锂离子二次电池的制造方法
JP4635407B2 (ja) 2003-03-25 2011-02-23 三洋電機株式会社 二次電池用非水系電解液及び非水系電解液二次電池
US6955986B2 (en) 2003-03-27 2005-10-18 Asm International N.V. Atomic layer deposition methods for forming a multi-layer adhesion-barrier layer for integrated circuits
US20070141468A1 (en) 2003-04-03 2007-06-21 Jeremy Barker Electrodes Comprising Mixed Active Particles
WO2004090982A1 (ja) 2003-04-04 2004-10-21 Matsushita Electric Industrial Co., Ltd. 電池搭載集積回路装置
WO2004093223A2 (en) 2003-04-14 2004-10-28 Massachusetts Institute Of Technology Integrated thin film batteries on silicon integrated circuits
KR100508945B1 (ko) 2003-04-17 2005-08-17 삼성에스디아이 주식회사 리튬 전지용 음극, 그의 제조 방법 및 그를 포함하는 리튬전지
US7045246B2 (en) 2003-04-22 2006-05-16 The Aerospace Corporation Integrated thin film battery and circuit module
US7088031B2 (en) 2003-04-22 2006-08-08 Infinite Power Solutions, Inc. Method and apparatus for an ambient energy battery or capacitor recharge system
US6936377B2 (en) 2003-05-13 2005-08-30 C. Glen Wensley Card with embedded IC and electrochemical cell
US7238628B2 (en) 2003-05-23 2007-07-03 Symmorphix, Inc. Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US6886240B2 (en) 2003-07-11 2005-05-03 Excellatron Solid State, Llc Apparatus for producing thin-film electrolyte
WO2005008828A1 (en) 2003-07-11 2005-01-27 Excellatron Solid State, Llc System and method of producing thin-film electrolyte
US6852139B2 (en) 2003-07-11 2005-02-08 Excellatron Solid State, Llc System and method of producing thin-film electrolyte
EP1665416B1 (en) 2003-08-01 2014-04-30 Bathium Canada Inc. Cathode material for polymer batteries and method of preparing same
JP2005078985A (ja) 2003-09-02 2005-03-24 Toshiba Battery Co Ltd 非水系二次電池用電極及びこれを用いたリチウム二次電池。
US20050070097A1 (en) 2003-09-29 2005-03-31 International Business Machines Corporation Atomic laminates for diffusion barrier applications
US7230321B2 (en) 2003-10-13 2007-06-12 Mccain Joseph Integrated circuit package with laminated power cell having coplanar electrode
US20050079418A1 (en) 2003-10-14 2005-04-14 3M Innovative Properties Company In-line deposition processes for thin film battery fabrication
FR2861218B1 (fr) 2003-10-16 2007-04-20 Commissariat Energie Atomique Couche et procede de protection de microbatteries par une bicouche ceramique-metal
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
US20050133361A1 (en) 2003-12-12 2005-06-23 Applied Materials, Inc. Compensation of spacing between magnetron and sputter target
EP1544917A1 (en) 2003-12-15 2005-06-22 Dialog Semiconductor GmbH Integrated battery pack with lead frame connection
JP2005196971A (ja) 2003-12-26 2005-07-21 Matsushita Electric Ind Co Ltd リチウム二次電池用負極とその製造方法ならびにリチウム二次電池
US7494742B2 (en) 2004-01-06 2009-02-24 Cymbet Corporation Layered barrier structure having one or more definable layers and method
TWI302760B (en) 2004-01-15 2008-11-01 Lg Chemical Ltd Electrochemical device comprising aliphatic nitrile compound
JP3859645B2 (ja) 2004-01-16 2006-12-20 Necラミリオンエナジー株式会社 フィルム外装電気デバイス
CN1918727A (zh) 2004-02-07 2007-02-21 株式会社Lg化学 用有机/无机复合多孔层涂覆的电极以及包括该电极的电化学装置
JP4813767B2 (ja) 2004-02-12 2011-11-09 出光興産株式会社 リチウムイオン伝導性硫化物系結晶化ガラス及びその製造方法
US7968233B2 (en) 2004-02-18 2011-06-28 Solicore, Inc. Lithium inks and electrodes and batteries made therefrom
US7624499B2 (en) 2004-02-26 2009-12-01 Hei, Inc. Flexible circuit having an integrally formed battery
EP1723080B1 (de) 2004-03-06 2014-06-18 Basf Se Chemisch stabiler fester lithiumionenleiter
DE102004010892B3 (de) 2004-03-06 2005-11-24 Christian-Albrechts-Universität Zu Kiel Chemisch stabiler fester Lithiumionenleiter
JP4418262B2 (ja) 2004-03-12 2010-02-17 三井造船株式会社 基板・マスク固定装置
US20050255828A1 (en) 2004-05-03 2005-11-17 Critical Wireless Corporation Remote terminal unit and remote monitoring and control system
US7052741B2 (en) 2004-05-18 2006-05-30 The United States Of America As Represented By The Secretary Of The Navy Method of fabricating a fibrous structure for use in electrochemical applications
WO2006014622A2 (en) 2004-07-19 2006-02-09 Face Bradbury R Footwear incorporating piezoelectric energy harvesting system
US7195950B2 (en) 2004-07-21 2007-03-27 Hewlett-Packard Development Company, L.P. Forming a plurality of thin-film devices
US7645246B2 (en) 2004-08-11 2010-01-12 Omnitek Partners Llc Method for generating power across a joint of the body during a locomotion cycle
JP4892180B2 (ja) 2004-08-20 2012-03-07 セイコーインスツル株式会社 電気化学セル、その製造方法およびその外観検査方法
JP4381273B2 (ja) 2004-10-01 2009-12-09 株式会社東芝 二次電池及び二次電池の製造方法
CN100539288C (zh) 2004-12-02 2009-09-09 株式会社小原 全固态型锂离子二次电池及其固体电解质
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
TWI346403B (en) 2004-12-08 2011-08-01 Springworks Llc Deposition of licoo2
JP5165843B2 (ja) * 2004-12-13 2013-03-21 パナソニック株式会社 活物質層と固体電解質層とを含む積層体およびこれを用いた全固体リチウム二次電池
US7670724B1 (en) 2005-01-05 2010-03-02 The United States Of America As Represented By The Secretary Of The Army Alkali-hydroxide modified poly-vinylidene fluoride/polyethylene oxide lithium-air battery
US20060155545A1 (en) 2005-01-11 2006-07-13 Hosanna, Inc. Multi-source powered audio playback system
WO2006078866A2 (en) 2005-01-19 2006-07-27 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electric current-producing device having sulfone-based electrolyte
WO2006088600A2 (en) 2005-01-20 2006-08-24 Bae Systems Information And Electronic Systems Integration Inc. Microradio design, manufacturing method and applications for the use of microradios
US20090302226A1 (en) 2005-02-08 2009-12-10 Yissum Research Development Company Of The Hebrew University Of Jerusalem Solid-state neutron and alpha particles detector and methods for manufacturing and use thereof
DE102005014427B4 (de) 2005-03-24 2008-05-15 Infineon Technologies Ag Verfahren zum Verkapseln eines Halbleiterbauelements
EP1713024A1 (en) 2005-04-14 2006-10-18 Ngk Spark Plug Co., Ltd. A card, a method of manufacturing the card, and a thin type battery for the card
US20060237543A1 (en) 2005-04-20 2006-10-26 Ngk Spark Plug Co., Ltd. Card, manufacturing method of card, and thin type battery for card
WO2007004590A1 (ja) 2005-07-01 2007-01-11 National Institute For Materials Science 全固体リチウム電池
US20070021156A1 (en) 2005-07-19 2007-01-25 Hoong Chow T Compact radio communications device
US8182661B2 (en) 2005-07-27 2012-05-22 Applied Materials, Inc. Controllable target cooling
US7400253B2 (en) 2005-08-04 2008-07-15 Mhcmos, Llc Harvesting ambient radio frequency electromagnetic energy for powering wireless electronic devices, sensors and sensor networks and applications thereof
CA2618635C (en) 2005-08-09 2012-04-24 Polyplus Battery Company Compliant seal structures for protected active metal anodes
CA2630198C (en) 2005-08-10 2015-05-05 Bionic Power Inc. Methods and apparatus for harvesting biomechanical energy
DK176361B1 (da) 2005-08-12 2007-09-24 Gn As Kommunikationsenhed med indbygget antenne
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
US7553582B2 (en) 2005-09-06 2009-06-30 Oak Ridge Micro-Energy, Inc. Getters for thin film battery hermetic package
US7202825B2 (en) 2005-09-15 2007-04-10 Motorola, Inc. Wireless communication device with integrated battery/antenna system
JP2007094641A (ja) 2005-09-28 2007-04-12 Kyocera Corp 在宅情報システム、在宅情報管理装置及び在宅情報管理方法
US7345647B1 (en) 2005-10-05 2008-03-18 Sandia Corporation Antenna structure with distributed strip
JP2007107752A (ja) 2005-10-11 2007-04-26 Yamaoka Kinzoku Kogyo Kk 屋外ストーブ
US20070187836A1 (en) 2006-02-15 2007-08-16 Texas Instruments Incorporated Package on package design a combination of laminate and tape substrate, with back-to-back die combination
TWI368347B (en) 2006-02-16 2012-07-11 Lg Chemical Ltd Electrode including organic/inorganic composite coating layer and electrochemical device prepared thereby
DE102006009789B3 (de) 2006-03-01 2007-10-04 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauteils aus einer Verbundplatte mit Halbleiterchips und Kunststoffgehäusemasse
CN101395617B (zh) 2006-03-10 2012-05-30 株式会社半导体能源研究所 半导体器件及其操作方法
KR100791791B1 (ko) 2006-03-10 2008-01-04 주식회사 엘지화학 다공성 활성층이 코팅된 전극, 그 제조방법 및 이를 구비한전기화학소자
KR20090008255A (ko) 2006-03-22 2009-01-21 파워캐스트 코포레이션 무선 전원의 구현을 위한 방법 및 장치
US8155712B2 (en) 2006-03-23 2012-04-10 Sibeam, Inc. Low power very high-data rate device
US20070235320A1 (en) 2006-04-06 2007-10-11 Applied Materials, Inc. Reactive sputtering chamber with gas distribution tubes
DE102006025671B4 (de) 2006-06-01 2011-12-15 Infineon Technologies Ag Verfahren zur Herstellung von dünnen integrierten Halbleitereinrichtungen
JP2008091328A (ja) 2006-09-04 2008-04-17 Sumitomo Electric Ind Ltd リチウム二次電池およびその製造方法
US8162230B2 (en) 2006-10-17 2012-04-24 Powerid Ltd. Method and circuit for providing RF isolation of a power source from an antenna and an RFID device employing such a circuit
JP2008103283A (ja) 2006-10-20 2008-05-01 Idemitsu Kosan Co Ltd 全固体電池
DE102006054309A1 (de) 2006-11-17 2008-05-21 Dieter Teckhaus Batteriezelle mit Kontaktelementenanordnung
US7466274B2 (en) 2006-12-20 2008-12-16 Cheng Uei Precision Industry Co., Ltd. Multi-band antenna
JP4466668B2 (ja) 2007-03-20 2010-05-26 セイコーエプソン株式会社 半導体装置の製造方法
JP5448020B2 (ja) 2007-03-23 2014-03-19 トヨタ自動車株式会社 合材層の製造方法および固体電池の製造方法
US7915089B2 (en) 2007-04-10 2011-03-29 Infineon Technologies Ag Encapsulation method
US7862627B2 (en) 2007-04-27 2011-01-04 Front Edge Technology, Inc. Thin film battery substrate cutting and fabrication process
US7848715B2 (en) 2007-05-03 2010-12-07 Infineon Technologies Ag Circuit and method
US20090202903A1 (en) * 2007-05-25 2009-08-13 Massachusetts Institute Of Technology Batteries and electrodes for use thereof
DE102007030604A1 (de) 2007-07-02 2009-01-08 Weppner, Werner, Prof. Dr. Ionenleiter mit Granatstruktur
US20110304430A1 (en) 2007-07-30 2011-12-15 Bae Systems Information And Electronic Systems Integration Inc. Method of tracking a container using microradios
US20090092903A1 (en) * 2007-08-29 2009-04-09 Johnson Lonnie G Low Cost Solid State Rechargeable Battery and Method of Manufacturing Same
JP5151692B2 (ja) 2007-09-11 2013-02-27 住友電気工業株式会社 リチウム電池
JP5234394B2 (ja) * 2007-09-21 2013-07-10 住友電気工業株式会社 リチウム電池
US8634773B2 (en) 2007-10-12 2014-01-21 Cochlear Limited Short range communications for body contacting devices
KR101147604B1 (ko) * 2007-10-12 2012-05-23 주식회사 엘지화학 젤리-롤형 전극조립체의 변형을 억제하기 위한 제조방법
WO2009063747A1 (ja) * 2007-11-13 2009-05-22 Sumitomo Electric Industries, Ltd. リチウム電池およびその製造方法
EP2229706B1 (en) 2008-01-11 2014-12-24 Infinite Power Solutions, Inc. Thin film encapsulation for thin film batteries and other devices
JP5368711B2 (ja) * 2008-01-23 2013-12-18 出光興産株式会社 全固体リチウム二次電池用の固体電解質膜、正極膜、又は負極膜、及びそれらの製造方法並びに全固体リチウム二次電池
JP5289080B2 (ja) 2008-01-31 2013-09-11 株式会社オハラ リチウムイオン二次電池の製造方法
JP5239375B2 (ja) * 2008-02-14 2013-07-17 トヨタ自動車株式会社 全固体電池およびその製造方法
US8056814B2 (en) 2008-02-27 2011-11-15 Tagsys Sas Combined EAS/RFID tag
TW200952250A (en) 2008-06-12 2009-12-16 Arima Comm Co Ltd Portable electronic device having broadcast antenna
KR20110058793A (ko) 2008-08-11 2011-06-01 인피니트 파워 솔루션스, 인크. 전자기 에너지를 수확하기 위한 일체형 컬렉터 표면을 갖는 에너지 디바이스 및 전자기 에너지를 수확하는 방법
US8389160B2 (en) 2008-10-07 2013-03-05 Envia Systems, Inc. Positive electrode materials for lithium ion batteries having a high specific discharge capacity and processes for the synthesis of these materials
JP5577028B2 (ja) * 2008-10-09 2014-08-20 出光興産株式会社 硫化物系固体電解質の製造方法
US8906818B2 (en) * 2009-10-13 2014-12-09 Recapping, Inc. High energy density ionic dielectric materials and devices
AR079451A1 (es) 2009-12-18 2012-01-25 Nycomed Gmbh Compuestos 3,4,4a,10b-tetrahidro-1h-tiopirano[4,3-c]isoquinolina
FR2956523B1 (fr) 2010-02-18 2012-04-27 Centre Nat Rech Scient Procede de preparation d'une batterie monolithique par frittage sous courant pulse

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6365300B1 (en) * 1998-12-03 2002-04-02 Sumitomo Electric Industries, Ltd. Lithium secondary battery
CN101595590A (zh) * 2007-02-13 2009-12-02 丰田自动车株式会社 全固体锂二次电池

Also Published As

Publication number Publication date
US10680277B2 (en) 2020-06-09
JP2017135114A (ja) 2017-08-03
EP2577777A1 (en) 2013-04-10
US20110300432A1 (en) 2011-12-08
EP2577777B1 (en) 2016-12-28
EP2577777A4 (en) 2014-03-19
KR101930561B1 (ko) 2018-12-18
JP2013528912A (ja) 2013-07-11
WO2011156392A1 (en) 2011-12-15
CN102947976A (zh) 2013-02-27
JP2015228373A (ja) 2015-12-17
KR20130119411A (ko) 2013-10-31
US20180097252A1 (en) 2018-04-05

Similar Documents

Publication Publication Date Title
CN102947976B (zh) 可充电、高密度的电化学设备
JP7220642B2 (ja) 固体電池、セパレータ、電極および製造方法
US10581083B2 (en) Lithium accumulator and the method of producing thereof
US11876172B2 (en) All-solid battery and method for producing the same
US20170271678A1 (en) Primer Surface Coating For High-Performance Silicon-Based Electrodes
JP6313491B2 (ja) 全固体リチウム硫黄電池およびその製造方法
US20160261002A1 (en) Solid-state multi-layer electrolyte, electrochemical cell and battery including the electrolyte, and method of forming same
US20160308243A1 (en) Electrochemical cell with solid and liquid electrolytes
WO2017046915A1 (ja) 二次電池用複合電解質、二次電池及び電池パック
JP2013051171A (ja) 全固体電池用電極体及び全固体電池
WO2017046917A1 (ja) 二次電池用複合電解質、二次電池及び電池パック
Gutiérrez-Pardo et al. Will the competitive future of solid state Li metal batteries rely on a ceramic or a composite electrolyte?
JPH0346772A (ja) 非水性アルカリ電池
JP4192635B2 (ja) リチウムイオン二次電池用電解質およびそれを用いたリチウムイオン二次電池
JP2007019032A (ja) 電池
WO2025094871A1 (ja) 全固体二次電池実装回路基板の製造方法
WO2025094870A1 (ja) 全固体二次電池実装回路基板の製造方法
JP2026011412A (ja) 非水電解質蓄電素子用の正極及び非水電解質蓄電素子

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: SAPURAST RESEARCH LLC

Free format text: FORMER OWNER: PHONEX CORP.

Effective date: 20150528

C41 Transfer of patent application or patent right or utility model
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: American Colorado

Applicant after: PHONEX Corp.

Address before: American Colorado

Applicant before: INFINITE POWER SOLUTIONS, Inc.

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: INFINITE POWER SOLUTIONS INC. TO: PHONEX CORP.

Free format text: CORRECT: ADDRESS; FROM:

TA01 Transfer of patent application right

Effective date of registration: 20150528

Address after: American Delaware

Applicant after: Saplast Research LLC

Address before: American Colorado

Applicant before: Phonex Corp.

GR01 Patent grant
GR01 Patent grant