CN1022136C - Capacitive accelerometer and its fabrication method - Google Patents
Capacitive accelerometer and its fabrication method Download PDFInfo
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- CN1022136C CN1022136C CN88107822A CN88107822A CN1022136C CN 1022136 C CN1022136 C CN 1022136C CN 88107822 A CN88107822 A CN 88107822A CN 88107822 A CN88107822 A CN 88107822A CN 1022136 C CN1022136 C CN 1022136C
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- 238000000034 method Methods 0.000 title claims description 31
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000007789 sealing Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 238000009429 electrical wiring Methods 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims 1
- 238000010276 construction Methods 0.000 abstract description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 11
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- 238000006073 displacement reaction Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
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Abstract
The accelerometer comprises two side electrode structures incorporating fixed side electrodes and arranged between the fixed side electrodes, a centre electrode structure which incorporates a centre electrode. The centre electrode structure comprises a planar body element. The centre electrode structure is processed by etching a groove penetrating the body element in a U-shape and delineating the cantilever beam-like centre electrode. Portion of the centre electrode is formed thinner than the wall section of the body element so that electrode gaps are formed between the side electrodes and the centre electrode. The stem section of the centre electrode structure, integral with the body element, is essentially thinner than the portion in order to obtain a flexible centre electrode. The transducer construction is easily manufactured in mass production.
Description
The present invention relates to the capacitive accelerometer that a kind of silicon materials are made, this accelerometer comprises two each interval one segment distances, is arranged in parallel, is basically tabular planar side electrode member (15), dispose Face to face and comprise side fixed electorde (4,6 ') and a homogeneous be tabular central electrode member (16) basically, be configured between the side electrode member (15), this central electrode member (16) comprises; One is connected to the main component (3) of side electrode member (15) and at least one is placed in side electrode (4,6 ') near, and the central electrode (17) that comprises a rod member (2) and an end (1), thereby the bar (2) of central electrode (17) is connected to central electrode (17) on the main component (3), so main component (3) is just sealing central electrode (17) from the side, so rod member (2) is thinner than end (1) in fact.
The invention still further relates to a kind of manufacture method of accelerometer.
Described accelerometer is actually a small-sized force transducer, but its main application is to examine then acceleration.This accelerometer also can be used for other purposes, for example detects the pitch angle.
Known in the art small-sized accelerometer is based on piezoelectricity or pressure drag principle of work mostly.
Piezoelectric crystal produces its size and depends on the surface charge that is applied to lip-deep power.Measure this electric charge with electric charge susceptibility amplifier then.Measure its input impedance height of used amplifier, thereby make amplifier be subject to the interference of static.The electric charge that is produced on the surface is naturally and understandably via surface leakage current discharge, therefore will measure static state or the low frequency acceleration is impossible with this accelerometer.
The piezoresistive accelerometer is generally made by semiconductor material (for example silicon), and each resistor then is diffused in the semiconductor material on suitable crystallographic direction.Crystal is by bending the time, and the stress that causes thus changes resistance, so can detect crooked amplitude.This bending amplitude is directly proportional with applied force thereby with acceleration.
Small-sized piezoresistive device can be used microelectric technique and micro-cutting job operation, is made by (for example) silicon.For obtaining maximum sensitivity, maximum stress is in the resistor area.This comes its amplitude of displacement of elastic part just much bigger than the thickness of member, in addition, the shake body of auxiliary loading as accelerometer also must be set, because the density of silicon itself is less on the accelerometer of sensitivity.The manufacturing process of this auxiliary body is difficult to carry out.In addition, the piezoresistive accelerometer to temperature drift compared with for example capacitive accelerometer sensitivity many.Moreover the piezoresistive accelerometer is lower than capacitive accelerometer aspect the so-called coefficient of strain.
Since later stage in the sixties, make accelerometer is to adopt monocrystalline silicon always.In this class solution some were delivered in scientific and technical literature, and some has also obtained patent right.The piezoresistive accelerometer has introduction in following publication:
(1) " the mass-producted silicon accelerometer " of L.M. Roylance and J.B. An Cheer, " IEEE electron device collection of thesis " ED-26, the 1911st～1920 page (1979)
(2) people's such as W. Bei Neike " frequency selectivity piezoresistive silicon vibrating detector " " sensor 1 " the 406th～409 page (1987)
(3) " semiconductor-type accelerometer that self-actuated controller is used " " sensor 1 " the 403rd～405 page (1987) of M. Zhu Kai and M. shellfish Xiao
(4) E.J. Yi Wansi, the U.S. 3,478,604(1968)
(5) the A.J. leaf is graceful, United States Patent (USP) 3,572,109(1971)
What introduced in publication (4) and (5) is the accelerometer of " elastic cantilever " formula structure.
Visitor's property accelerometer then has introduction respectively in following publication:
(6) the H.W. expense is had a rest, United States Patent (USP) 3,911,738(1975)
(7) W.H. takes root, United States Patent (USP) 4,009,607(1977)
(8) people such as F.V Hao Erdelun, United States Patent (USP) 4,094,199(1878)
(9) H.E Chinese mugwort Buddhist nun, United States Patent (USP) 4,144,516(1979)
(10) people such as K.E Bi Desen, United States Patent (USP) 4,342,227(1982)
(11) the R.F. Cauer pauses, United States Patent (USP) 4,435,737(1984)
(12) F. draw bead that husband, United States Patent (USP) 4,483,194(1984)
(13) L.B. Wei Erni, United States Patent (USP) 4,574,327(1986)
Publication (6) has been introduced the accelerometer of two electric capacity of a kind of employing, but does not disclose its practical structures.
Publication (7) is identical with publication (6) basically, has just adopted different electric embodiments.
Publication (8) also relates to two capacitance principles of accelerometer.
Publication (9) has been introduced a kind of mini type mechanical acceleration meter, wherein shakes body overhang on the sheet spring.
Publication (10) has been introduced a kind of elastic cantilever formula accelerometer, and wherein semi-girder moves in a horizontal plane, and has asymmetric structure electric.
Publication (11) relates to a kind of loop configuration.
Publication (12) relates to a kind of distortion suspension plate, and wherein electric capacity only is placed in one side of plate.
Publication (13) has been introduced a kind of structure of body overhang on a film spring of shaking.The objective of the invention is to overcome the various shortcoming of art methods, and brand-new capacitive accelerometer and a kind of manufacture method thereof is provided.
The present invention is based on the capacitive formula accelerometer of being made by two capacitors, this two capacitor has a public electrode that is moving to play the shake body effect of accelerometer.The beam that a central electrode and a same material are made constitutes one-piece construction.This elastic component can adopt one or several.When adding an acceleration, the shake body is with regard to the several micron of displacement, just can detect this displacement from the variation of capacitance.The structure of accelerometer is bilateral formula, and is symmetrical.
More particularly, accelerometer of the present invention is characterised in that:
-central electrode member (16) is symmetrical in the central plane of side electrode member (15);
-central electrode (17) is the shape of beam, is surrounded with the groove that takes the shape of the letter U and extend by main component (3) on every side;
Being similar to of its thickness of end (1) of-central electrode (17) and main component (3), thereby between side electrode (4,6 ') and central electrode (17), form small electrode gap (7), the spacing of each electrode gap (7) depends on the thickness of end (1); With
-side electrode member (15) is contained on the main component (3) of central electrode member (16) via the form of electric insulation layer (5) with sealing, thereby each central electrode (17) still is in airtight the space, and electrode member (15,16) under normal circumstances insulate on electric when not having the external electrical wiring each other.
Manufacture method of the present invention in addition is characterised in that, for making detecting device have favourable frequency response, except that side electrode (15) being contained in central electrode member (16) goes up, also make to the airtight space (7) of side electrode (15) to be in suitable gaseous tension.
Structure of the present invention has following advantage 1:
-because the principle work of pressing electric capacity, thereby can be issued to very high sensitivity △ C/C in the very little situation of shake displacement body;
-because structure is symmetrical, thereby the uncompensated temperature control of accelerometer is very low;
-because shake body and elastic component are that same material (as silicon) is made, thereby the shake body that need not to assist;
-establish groove on the electrode for capacitors or in manufacture process, in arrangements of accelerometers, keeping suitable pressure can change the damping factor of accelerometer;
-electric capacity is symmetrical in the null value of acceleration and changes;
-this accelerometer can be produced by batch;
The g tolerance of-this accelerometer is high, and this is because the shake body supports the several microns of a displacement before by side electrode.
Study content of the present invention in more detail by means of some cited embodiment with reference to the accompanying drawings below.
Fig. 1 is the longitudinal profile side view of an arrangements of accelerometers of the present invention.
Fig. 2 is the longitudinal profile side view of another arrangements of accelerometers of the present invention.
Fig. 3 a to 3c is the skeleton view of the variant parts of arrangements of accelerometers shown in Figure 1.
Fig. 4 a to 4c is the skeleton view of the different parts of arrangements of accelerometers shown in Figure 2.
Fig. 5 is the part longitudinal profile skeleton view of arrangements of accelerometers shown in Figure 2.
Fig. 6 is the longitudinal profile side view of the 3rd arrangements of accelerometers of the present invention.
Fig. 7 a is that arrangements of accelerometers of the present invention is at the top view that adds for the first time the mask stage.
Fig. 7 b is by the top view that adds the end product that the mask stage obtains shown in Fig. 7 a.
Fig. 8 a is that arrangements of accelerometers of the present invention is at the top view that adds for the second time the mask stage.
Fig. 8 b is by the top view that adds resulting end product of mask stage shown in Fig. 8 a.
To be arrangements of accelerometers of the present invention adding the top view in mask stage to Fig. 9 a for the third time.
Fig. 9 b is by the top view that adds the end product that the mask stage draws shown in Fig. 9 a.
Known conventional method was made by (for example) monocrystalline silicon during accelerometer of the present invention can be made with micromachine.Fig. 1 illustration the basic structure of this accelerometer.This accelerometer can be sealed make the shell of accelerometer can be under suitable lower negative pressure gas-flow closure.For the shake body that makes accelerometer reaches required damping factor, can change the pressure of filling gas.Employed filling gas can be the air that (for example) is dry.Suitably select damping factor can make accelerometer have favourable frequency response.
But be the structure of further simplifying accelerometer, can make open type by degree of will speed up meter, as shown in Figure 2, thereby make the internal gas pressure of accelerometer equal ambient pressure.Internal gas space is in communication with the outside via passage 8.But the damping factor of shaking body like this is very high, thereby a kind of like this accelerometer can only use down, and can only measure static acceleration low frequency (being several conspicuous).
Fig. 1 illustration the structure of accelerometer of sealing.This accelerometer is got stacked structure, comprises the planar side electrode member 15 of electric interconnection, and a central electrode member 16 that is arranged in parallel is arranged between the electrode member 15, and the shake body 1 of electrode member 16 is formed by the end of semi-girder 17.Semi-girder 17 forms in central electrode member 16, and its method is to form a u shape groove that extends by the whole member of central electrode 16 in beam.In addition,, the part material of beam 17 is removed, and this part has flexibility for the rod member 2 that makes beam 17, with the reduced width of rod member 2 for forming the gap 7 that electric capacity is established.Therefore integral central electrode member 16 comprises beam 17, and 17 on beam comprises shake body 1 and flexible rod member 2 and round the accelerometer main component 3 of semi-girder 17.Shake body 1 is preferably made than main component 3 thin several microns, does beneficial like this.Central electrode member 16 can be made by (for example) same monocrystalline silicon.The electric capacity of accelerometer is to form between the fixedly side electrode 4 of the public traveling electrode 1 of central electrode member 16 and side electrode member 15.Side electrode 4 is made by for example monocrystalline silicon, and its method is the surface of etching corresponding to insulation course 5, makes in silicon shake body 1 place and 6 places, weld zone reserve a bossing.Insulation course 5 can be made by (for example) glass.Glass areal coverage 5 and main component 3 for example can adopt the anodic bonding connection to seal each other and weld.The structure of central electrode member 16 is that mirror-symmetrical is in planar S shown in Figure 1 (xy plane).Shake body 1 can move on the Z direction.
The structure of accelerometer that Fig. 3 a to 3c has drawn Fig. 1 in detail.Fig. 3 and last Fig. 3 a of 4 and 4b illustrate with the position of reversing, so that can be more clearly visible metalized portion 6 and 6 ' and silicon part 4.
Fig. 2 illustration the unenclosed construction of accelerometer.The difference of this structure and enclosed construction is as follows:
-side electrode member 15 is made by glass fully, and electrode surface is coated with metalized portion 6 and 6 ' as the part of accelerometer performance electric function;
-metalized portion 6 is configured to link to each other with passage 8, prevents metalized portion 6 and main component 3 short circuits simultaneously again.
The arrangements of accelerometers that Fig. 4 a to 4c has drawn Fig. 2 in detail.In illustrated two kinds of structures, all electric contacting parts divide 6 preferably the place of making so need to use the fed element 10 shown in Fig. 3 and 4 at grade.This part is to make with main component 3 same materials, but with the main component electric insulation.The structure that Fig. 5 has drawn element 10 in more detail.Bossing 9 its effects shown in Fig. 4 b are main component 3 to be formed with middle contact portion 6 electrically contact.The layout that Fig. 5 has drawn accelerometer.
The shake-proof ability of accelerometer can be improved like this: flexible element 2 is carried out the feasible next one bossing 11 as shown in Figure 6 that stays therein of etching, and this bossing 11 can prevent under the sharp pounding situation that flexible element 2 is too crooked.The size Selection of accelerometer depends on required sensitivity and electric capacity to a great extent.The typical sizes of shake body 1 is (for example) 2 * 0.5 * 4 cubic millimeters, and the typical sizes of semi-girder 2 is 2 * 0.07 * 4 cubic millimeters.The external dimensions of accelerometer is about 4 * 3 * 12 cubic millimeters (wide * height * length).
The both sides of the suitable processing of the manufacturing procedure of introducing below single crystal semiconductor (for example both sides polished silicon wafer) base material.
1. the both sides with silicon wafer are oxidized to about 250 millimicrons degree of depth.The thickness of this wafer can be (for example) 500 microns.
2. wafer is exposed coated with photoresist and shown in Fig. 7 a like that to make central electrode part 12, later oxide layer is promptly fallen from this partial corrosion.Fig. 7 silicon that drawn.
3. then, the central electrode part 12 shown in Fig. 7 b is etched into about 4 microns degree of depth in the KOH aqueous solution.
4. use the HF that handled through buffering agent that the oxide layer of wafer is eroded, and wafer is oxidized to about 0.8 micron degree of depth.
5. wafer is coated with photoresist and with each edge exposure of central electrode part 12 with form marginal portion 13 shown in Fig. 8 a and contact portion 13 ', oxide layer is promptly removed from these parts.Remove photoresist.
6. with the about 50 microns degree of depth of each several part 13 and 13 ' etch into, then form the center electrode pattern 17 of Fig. 8 b '.
7. wafer is recoated with photoresist, then with center electrode pattern 17 ' rod member exposure to produce a part 14 shown in Fig. 9 a, oxide layer is promptly removed from this part.
8. continue to corrode wafer up to reaching the desired degree of depth in part 14 in KOH aqueous solution for example, the soak process of the part 13 shown in Fig. 9 b so just take place in the general little degree of depth to 40～100 microns.This operation produces the element 16 of Fig. 3 b.
Side electrode member 15 with said method manuscript 3a and 3c, the concrete practice is that a surface etch with silicon wafer is to about 150 microns degree of depth, only stay little (shade) part 4 shown in Fig. 3 a and the 3c together with part 4 in electric coconnected (shade) part 6, keep original height.Next step is by fusion, and the surface that wafer was corroded is coated with suitable glassy layer, Schott Tempax for example, and 7740 grades of glass of Corning 7070 or Corning grind and are polished down to the height same with the wafer original surface with this glassy layer.From United States Patent (USP) 4,597,027(A thunder degree) can recognize this method.Become metalized portion 6 with unloading the wafer process that division or etch process will be covered with glass then.These methods all are common methods, thereby no longer describe in detail here.Use so-called anode connection method at suitable pressures together at last with three bonding wafers.The height of used pressure depends on the desired damping factor of accelerometer, generally at several hpa orders of magnitude.The detailed introduction of method therefor (and other method) is referring to " little process physics " book (New York mine-laying Nan Mu publishing house nineteen eighty-three version) of Yi Wu Bu Ludi and Julius J Mu Lei work.
The central electrode member 16 of Fig. 4 a to 4c is to adopt with above-mentioned almost completely identical method to process.Different places are, carrying out 4 microns etched stages at the each several part of passage 8 and contact portion 9 has a part to be broadened.
The central electrode member 15 of Fig. 4 a to 4c is become by for example 7740 grades of glass processings of Schott Tempax, Corning 7070 or Corning.6 and 6 ' part is to carry out metallized with said method.The assembling of accelerometer adopts anodically-bonded method to carry out under normal pressure.
In the manufacturing process of two kinds of accelerometers, described wafer can be by means of the groove that cuts out the in advance cutting of rupturing.
Claims (5)
1, the capacitive accelerometer made of a kind of silicon materials comprises:
-two each interval one segment distances, be arranged in parallel, be basically tabular planar side electrode member (15), dispose Face to face and comprise side fixed electorde (4,6 ') and
-one homogeneous be tabular central electrode member (16) basically, be configured between the side electrode member (15), this central electrode member (16) comprising:
-one be connected to side electrode member (15) main component (3) and
-at least one central electrode (17), be placed in side electrode (4,6 ') near, and comprise a rod member (2) and an end (1), thereby the bar (2) of central electrode (17) is connected to central electrode (17) on the main component (3), so main component (3) is just sealing central electrode (17) from the side, so rod member (2) is thinner than end (1) in fact
This capacitive accelerometer is characterised in that:
-central electrode member (16) is symmetrical in the central plane of side electrode member (15);
-central electrode (17) is beam sample shape, is surrounded with the groove that takes the shape of the letter U and extend by main component (3) on every side;
Being similar to of its thickness of end (1) of-central electrode (17) and main component (3), thereby between side electrode (4,6 ') and central electrode (17), form small electrode gap (7), the spacing of each electrode gap (7) depends on the thickness of end (1); With
-side electrode member (15) is contained on the main component (3) of central electrode member (16) via the form of electric insulation layer (5) with sealing, thereby each central electrode (17) still is in airtight the space, and electrode member (15,16) under normal circumstances insulate on electric when not having the external electrical wiring each other.
2, accelerometer as claimed in claim 1 is characterized in that, described central electrode member (16) is rectangular.
3, accelerometer as claimed in claim 1 or 2, it is characterized in that, described central electrode member (16) is processed and be formed with the conduction connecting elements (10) of a cylindricality, the remainder electrical isolation of it and central electrode member (16), thus the bonding pad (6) of side electrode (15) is configured in the same plane.
4, a kind of method of making capacitive accelerometer, in the method:
-form two the side electrode members (15) comprise fixing side electrode (4,6 ') and
-configuration comprises a central electrode member (16) of a central electrode (17) between each side electrode member (15);
The method is characterized in that:
-central electrode member (16) is to be processed into by the monocrystalline silicon semi-conductor chip of homogeneous, and its practice is in the I process segment, etching central electrode part (12) and stay the both sides (Fig. 7) of chip center's part;
-in the II process segment, the marginal portion (13) at place, semi-conductor chip both sides of central electrode part (12) is further etched away, make to stay and nextly determined the beam shape center electrode pattern (17 ') of thickness in the I stage in central electrode part (12), simultaneously still with not etched semi-conductor chip (Fig. 8) in aggregates;
-in rod member (14) both sides of further etching center electrode pattern of III process segment (17 '), all etch away and till rod member (14) reaches desired thickness up to marginal portion (13); With
-in the mode of sealing side electrode (13) is installed on the central electrode member (16).
5, method as claimed in claim 4 is characterized in that, also make by side electrode (15) airtight space (7) be in suitable gaseous tension.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI874942 | 1987-11-09 | ||
| FI874942A FI81915C (en) | 1987-11-09 | 1987-11-09 | KAPACITIV ACCELERATIONSGIVARE OCH FOERFARANDE FOER FRAMSTAELLNING DAERAV. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1033110A CN1033110A (en) | 1989-05-24 |
| CN1022136C true CN1022136C (en) | 1993-09-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN88107822A Expired - Lifetime CN1022136C (en) | 1987-11-09 | 1988-11-09 | Capacitive accelerometer and its fabrication method |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPH01259265A (en) |
| KR (1) | KR890008569A (en) |
| CN (1) | CN1022136C (en) |
| DE (1) | DE3837883A1 (en) |
| ES (1) | ES2012420A6 (en) |
| FI (1) | FI81915C (en) |
| FR (1) | FR2622975B1 (en) |
| GB (1) | GB2212274A (en) |
| IT (1) | IT1224301B (en) |
| SE (1) | SE468067B (en) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4983485A (en) * | 1988-04-13 | 1991-01-08 | Shikoku Chemicals Corporation | Positively chargeable toner |
| JPH0623782B2 (en) * | 1988-11-15 | 1994-03-30 | 株式会社日立製作所 | Capacitance type acceleration sensor and semiconductor pressure sensor |
| US5228341A (en) * | 1989-10-18 | 1993-07-20 | Hitachi, Ltd. | Capacitive acceleration detector having reduced mass portion |
| US6864677B1 (en) | 1993-12-15 | 2005-03-08 | Kazuhiro Okada | Method of testing a sensor |
| JPH03210478A (en) * | 1990-01-12 | 1991-09-13 | Nissan Motor Co Ltd | Semiconductor acceleration sensor |
| DE4000903C1 (en) * | 1990-01-15 | 1990-08-09 | Robert Bosch Gmbh, 7000 Stuttgart, De | |
| JP2786321B2 (en) * | 1990-09-07 | 1998-08-13 | 株式会社日立製作所 | Semiconductor capacitive acceleration sensor and method of manufacturing the same |
| US6314823B1 (en) | 1991-09-20 | 2001-11-13 | Kazuhiro Okada | Force detector and acceleration detector and method of manufacturing the same |
| US5421213A (en) | 1990-10-12 | 1995-06-06 | Okada; Kazuhiro | Multi-dimensional force detector |
| DE4222472C2 (en) * | 1992-07-09 | 1998-07-02 | Bosch Gmbh Robert | Acceleration sensor |
| JP2533272B2 (en) * | 1992-11-17 | 1996-09-11 | 住友電気工業株式会社 | Method for manufacturing semiconductor device |
| FR2698447B1 (en) | 1992-11-23 | 1995-02-03 | Suisse Electronique Microtech | Micro-machined measuring cell. |
| DE10111149B4 (en) * | 2001-03-08 | 2011-01-05 | Eads Deutschland Gmbh | Micromechanical capacitive acceleration sensor |
| EP1243930A1 (en) | 2001-03-08 | 2002-09-25 | EADS Deutschland Gmbh | Micromechanical capacitive accelerometer |
| DE10117630B4 (en) * | 2001-04-09 | 2005-12-29 | Eads Deutschland Gmbh | Micromechanical capacitive acceleration sensor |
| DE10117257A1 (en) * | 2001-04-06 | 2002-10-17 | Eads Deutschland Gmbh | Micromechanical capacitive acceleration sensor |
| RU2207658C2 (en) * | 2001-07-09 | 2003-06-27 | ФГУП "НИИ физических измерений" | Method for producing capacitive micromechanical inertial sensor |
| JP2005077349A (en) * | 2003-09-03 | 2005-03-24 | Mitsubishi Electric Corp | Acceleration sensor |
| KR20080113048A (en) | 2006-03-10 | 2008-12-26 | 콘티 테믹 마이크로일렉트로닉 게엠베하 | Precision Mechanical Rotational Speed Sensor |
| EP2259018B1 (en) | 2009-05-29 | 2017-06-28 | Infineon Technologies AG | Gap control for die or layer bonding using intermediate layers of a micro-electromechanical system |
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| CN106771361B (en) * | 2016-12-15 | 2023-04-25 | 西安邮电大学 | Double-capacitance type micro-mechanical acceleration sensor and temperature self-compensation system based on same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH642461A5 (en) * | 1981-07-02 | 1984-04-13 | Centre Electron Horloger | ACCELEROMETER. |
| JPS6197572A (en) * | 1984-10-19 | 1986-05-16 | Nissan Motor Co Ltd | Manufacture of semiconductor acceleration sensor |
| US4744249A (en) * | 1985-07-25 | 1988-05-17 | Litton Systems, Inc. | Vibrating accelerometer-multisensor |
| US4679434A (en) * | 1985-07-25 | 1987-07-14 | Litton Systems, Inc. | Integrated force balanced accelerometer |
| DE3625411A1 (en) * | 1986-07-26 | 1988-02-04 | Messerschmitt Boelkow Blohm | CAPACITIVE ACCELERATION SENSOR |
| DE3703793A1 (en) * | 1987-02-07 | 1988-08-18 | Messerschmitt Boelkow Blohm | Detector element |
-
1987
- 1987-11-09 FI FI874942A patent/FI81915C/en not_active IP Right Cessation
-
1988
- 1988-11-08 DE DE3837883A patent/DE3837883A1/en not_active Ceased
- 1988-11-08 SE SE8804039A patent/SE468067B/en unknown
- 1988-11-08 ES ES8803392A patent/ES2012420A6/en not_active Expired - Fee Related
- 1988-11-08 FR FR888814564A patent/FR2622975B1/en not_active Expired - Lifetime
- 1988-11-08 KR KR1019880014655A patent/KR890008569A/en not_active Ceased
- 1988-11-08 IT IT48532/88A patent/IT1224301B/en active
- 1988-11-09 GB GB8826263A patent/GB2212274A/en not_active Withdrawn
- 1988-11-09 CN CN88107822A patent/CN1022136C/en not_active Expired - Lifetime
- 1988-11-09 JP JP63283533A patent/JPH01259265A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB8826263D0 (en) | 1988-12-14 |
| CN1033110A (en) | 1989-05-24 |
| FI81915C (en) | 1990-12-10 |
| SE8804039D0 (en) | 1988-11-08 |
| FR2622975B1 (en) | 1991-07-12 |
| FI874942L (en) | 1989-05-10 |
| GB2212274A (en) | 1989-07-19 |
| FI81915B (en) | 1990-08-31 |
| SE468067B (en) | 1992-10-26 |
| IT8848532A0 (en) | 1988-11-08 |
| FR2622975A1 (en) | 1989-05-12 |
| KR890008569A (en) | 1989-07-12 |
| FI874942A0 (en) | 1987-11-09 |
| IT1224301B (en) | 1990-10-04 |
| ES2012420A6 (en) | 1990-03-16 |
| JPH01259265A (en) | 1989-10-16 |
| DE3837883A1 (en) | 1989-05-18 |
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