CN109817819B - White Organic Light Emitting Diode Devices with Enhanced Light Extraction - Google Patents
White Organic Light Emitting Diode Devices with Enhanced Light Extraction Download PDFInfo
- Publication number
- CN109817819B CN109817819B CN201910099159.6A CN201910099159A CN109817819B CN 109817819 B CN109817819 B CN 109817819B CN 201910099159 A CN201910099159 A CN 201910099159A CN 109817819 B CN109817819 B CN 109817819B
- Authority
- CN
- China
- Prior art keywords
- layer
- refractive
- emitting diode
- light emitting
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000605 extraction Methods 0.000 title claims abstract description 20
- 239000010410 layer Substances 0.000 claims abstract description 173
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 239000002346 layers by function Substances 0.000 claims abstract description 32
- 239000004038 photonic crystal Substances 0.000 claims abstract description 31
- 239000011521 glass Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910010272 inorganic material Inorganic materials 0.000 claims description 10
- 239000011147 inorganic material Substances 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 5
- 239000005083 Zinc sulfide Substances 0.000 claims description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 230000005525 hole transport Effects 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 description 6
- 230000002708 enhancing effect Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 238000009396 hybridization Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 230000005284 excitation Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
一种增强光取出的白色有机发光二极管器件，包括：玻璃基板、以及依序堆迭设置在所述玻璃基板上的电极层、第一功能层、第一发光层、第二功能层、电荷产生层、第三功能层、第二发光层、第四功能层、介质金属介质层以及至少二一维光子晶体层；其中，所述介质金属介质层包括依序迭设在所述第四功能层上的第一高折射率层、金属层、以及第二高折射率层，所述第一高折射率层以及所述第二高折射率层作为介质层。有机发光二极管器件介质‑金属‑介质结构可以有效提高电极透过率，进一步提高器件光取出效率。
A white organic light-emitting diode device with enhanced light extraction, comprising: a glass substrate, and an electrode layer, a first functional layer, a first light-emitting layer, a second functional layer, and a charge generating layer stacked on the glass substrate in sequence layer, a third functional layer, a second light-emitting layer, a fourth functional layer, a dielectric metal dielectric layer, and at least a two-dimensional photonic crystal layer; wherein, the dielectric metal dielectric layer comprises layers stacked in sequence on the fourth functional layer The first high-refractive index layer, the metal layer, and the second high-refractive-index layer above, the first high-refractive-index layer and the second high-refractive-index layer serve as a medium layer. The organic light-emitting diode device medium-metal-dielectric structure can effectively improve the electrode transmittance and further improve the light extraction efficiency of the device.
Description
Technical Field
The invention relates to a light emitting diode device, in particular to a white organic light emitting diode device for enhancing light extraction, which improves the light extraction efficiency and the visual angle stability of the white organic light emitting diode device by combining a one-dimensional photonic crystal structure and a medium-Metal-Dielectric (DMD) method, and simultaneously can effectively improve the electrode transmittance and further improve the light extraction efficiency of the device by the medium-Metal-Dielectric structure. In addition, the one-dimensional photonic crystal structure is formed by stacking multiple pairs of inorganic materials and organic materials, so that the problem of large stress of an OLED device with the photonic crystal made of all inorganic materials is solved.
Background
Nowadays, the demand for large-sized White Organic Light Emitting Diode (WOLED) displays in the market is increasing. Among the white organic light emitting diodes in the prior art, a Top Emission white organic light emitting diode (Top Emission WOLED, TE WOLED) is the most commonly used device structure, and a Microcavity Effect (Microcavity Effect) exists on the metal electrodes at both sides of the Top Emission white organic light emitting diode. The microcavity effect can effectively improve the color purity, but at the same time can cause severe angle-varying chromatic aberration. The current main methods for solving the angle variation chromatic aberration are to inhibit the microcavity effect or to stabilize the viewing angle by using a hybrid mode.
The Photonic Crystal has a Photonic band gap, so that light falling into the Photonic band gap is emitted in a radiation mode, the light extraction efficiency is improved, meanwhile, an optical surface state exists on the interface of the metal and the One-Dimensional Photonic Crystal (One Dimensional Photonic Crystal), the surface state can be in a hybridization mode in a mode of being coupled with a microcavity mode, the enhancement of two light-emitting peaks can be effectively realized, and the Photonic Crystal is suitable for being applied to white organic light-emitting diodes with two components to realize the light extraction enhancement. In addition, the microcavity effect has obvious viewing angle instability, and the optical surface state is not influenced by the viewing angle change because the optical surface state is not influenced by the microcavity length and is only determined by the thickness of the metal electrode and the photonic crystal structure, so that the white organic light emitting diode based on the hybrid state can well ensure the viewing angle stability.
At present, two inorganic materials with large refractive index difference are mostly adopted for the one-dimensional photonic crystal to carry out A-B-A-B structure multilayer stacking, if the one-dimensional photonic crystal is introduced into a white organic light emitting diode, the problem of large stress is caused by the multiple inorganic materials, so that the display panel is easy to crack and strip, and the flexibility of the display panel is reduced. In addition, the nucleation process of the metal film causes the film to have different degrees of cracks when the thickness of the film is thin, the cracks destroy the continuity and the conductivity of the metal, and the excitation of a metal surface plasma mode can occur, so that a large amount of photons are lost. When Dielectric layers are adopted on two sides of the Metal, namely Dielectric-Metal-Dielectric (DMD), the continuity and transmittance of the Metal film can be effectively improved on the premise of ensuring the conductivity, and the anti-reflection effect of the Metal is realized.
Therefore, there is a need to provide a white organic light emitting diode device with enhanced light extraction to solve the problems of the prior art.
Disclosure of Invention
In view of the problems of reduced flexibility and defects of a display panel caused by the fact that two inorganic materials with greatly different refractive indexes are adopted for multi-layer stacking of one-dimensional photonic crystals of a white organic light emitting diode in the prior art, the invention provides a white organic light emitting diode device for enhancing light extraction, so as to solve the problems.
The invention mainly aims to provide a white organic light emitting diode device for enhancing light extraction, which comprises a glass substrate, and an electrode layer, a first functional layer, a first light emitting layer, a second functional layer, a charge generation layer, a third functional layer, a second light emitting layer, a fourth functional layer, a medium metal medium layer and at least two one-dimensional photonic crystal layers which are sequentially stacked on the glass substrate;
the medium metal medium layer comprises a first high-refractive-index layer, a metal layer and a second high-refractive-index layer which are sequentially arranged on the fourth functional layer in an overlapping mode, and the first high-refractive-index layer and the second high-refractive-index layer are used as medium layers;
the at least two one-dimensional photonic crystal layers are sequentially stacked on the dielectric metal medium layer, each one-dimensional photonic crystal layer comprises a second high-refractive-index layer and a low-refractive-index layer which are sequentially stacked, and the refractive index of the low-refractive-index layer is lower than that of the second high-refractive-index layer;
and the second high-refractive-index layer of the dielectric metal dielectric layer and the second high-refractive-index layer of the one-dimensional photonic crystal layer at the lowest part are the same layer.
In an embodiment of the present invention, the refractive index of the first high refractive index layer is the same as the refractive index of the second high refractive index layer.
In an embodiment of the present invention, the refractive index of the first high refractive index layer is greater than or equal to 2, and the refractive index of the second high refractive index layer is greater than or equal to 2.
In an embodiment of the present invention, the first high refractive index layer and the second high refractive index layer are made of an inorganic material.
In an embodiment of the present invention, the first and second high refractive index layers are made of zinc sulfide (ZnS), zinc oxide (ZnO), zinc selenide (ZnSe), titanium dioxide (TiO2), molybdenum oxide (MoO 3).
In an embodiment of the present invention, the low refractive index layer has a refractive index of less than or equal to 1.5.
In an embodiment of the present invention, the low refractive index layer is made of an organic material containing fluorine.
In an embodiment of the invention, the first light emitting layer is an organic light emitting diode light emitting layer, and the second light emitting layer is an organic light emitting diode light emitting layer.
In an embodiment of the invention, a color emitted by the first light emitting layer and a color emitted by the second light emitting layer are mixed to form white light.
In an embodiment of the present invention, each of the first functional layer, the second functional layer, the third functional layer, and the fourth functional layer is one of a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, and an electron injection layer.
Compared with the prior art, the white organic light emitting diode device for enhancing light extraction realizes hybridization of an Optical Tamm States (OTS) mode and a microcavity mode by using a method of combining the one-dimensional photonic crystal layer and the dielectric metal dielectric layer, respectively enhances the light emitting efficiency of the first light emitting layer and the second light emitting layer, simultaneously the Optical Tamm state is not influenced by the cavity length, realizes the enhancement of light coupling output efficiency and the guarantee of visual angle stability, simultaneously adopts the one-dimensional photonic crystal which is formed by stacking a plurality of layers of the second high refractive index layer and the low refractive index layer as a thin film packaging layer in the display panel, has smaller stress compared with the traditional photonic crystal structure, and avoids easy cracking, stripping and incompatibility with flexibility caused by more inorganic materials. In addition, the medium metal dielectric layer effectively improves the transmittance of the metal electrode under the condition of ensuring the conductivity, and further improves the light extraction efficiency of the device.
In order to make the aforementioned and other objects of the present invention more comprehensible, preferred embodiments accompanied with figures are described in detail below:
drawings
Fig. 1 is a side cross-sectional view of a white organic light emitting diode device with enhanced light extraction according to the present invention.
Detailed Description
Referring to fig. 1, the white organic light emitting diode device for enhancing light extraction of the present invention includes a glass substrate 10, and an electrode layer 11, a first functional layer 41, a first light emitting layer 20e, a second functional layer 42, a charge generation layer 22, a third functional layer 43, a second light emitting layer 30e, a fourth functional layer 44, a dielectric metal dielectric layer 5, and at least two one-dimensional photonic crystal layers 7 sequentially stacked on the glass substrate 10.
The dielectric metal dielectric layer 5 includes a first high refractive index layer 51h, a metal layer 60m, and a second high refractive index layer 52h sequentially stacked on the fourth functional layer 44, and the first high refractive index layer 51h and the second high refractive index layer 52h serve as dielectric layers.
The at least two one-dimensional photonic crystal layers 7 are sequentially stacked on the dielectric metal dielectric layer 5, each one-dimensional photonic crystal layer 7 includes a second high refractive index layer 52h and a low refractive index layer 70, which are sequentially stacked, and the refractive index of the low refractive index layer 70 is lower than that of the second high refractive index layer 52 h. The at least two one-dimensional photonic crystal layers 7 are unstructured, so that large-area preparation is facilitated, the light extraction efficiency of the white organic light emitting diode device can be improved, the stress of the device is weakened, and the white organic light emitting diode device can be used as a thin film packaging layer of the device.
The second high refractive index layer 52h of the dielectric metal dielectric layer 5 and the second high refractive index layer 52h of the one-dimensional photonic crystal layer 7 at the lowermost position are the same layer. The medium metal dielectric layer 5 can increase the transmittance of the metal electrode layer 11.
In an embodiment of the present invention, the refractive index of the first high refractive-index layer 51h is the same as the refractive index of the second high refractive-index layer 52 h. In an embodiment of the present invention, the refractive index of the first high refractive-index layer 51h is greater than or equal to 2, and the refractive index of the second high refractive-index layer 52h is greater than or equal to 2. In an embodiment of the present invention, the first high refractive index layer 51h and the second high refractive index layer 52h are made of inorganic materials.
In an embodiment of the present invention, the first high refractive-index layer 51h and the second high refractive-index layer 52h are made of zinc sulfide (ZnS), zinc oxide (ZnO), zinc selenide (ZnSe), titanium dioxide (TiO2), molybdenum oxide (MoO 3). In one embodiment of the present invention, the low refractive index layer 70 has a refractive index less than or equal to 1.5. In one embodiment of the present invention, the low refractive index layer 70 is made of a fluorine-containing organic material.
In an embodiment of the invention, the first light emitting layer 20e is an organic light emitting diode light emitting layer, and the second light emitting layer 30e is an organic light emitting diode light emitting layer. In an embodiment of the invention, the color emitted by the first light-emitting layer 20e and the color emitted by the second light-emitting layer 30e are mixed to form white light.
In an embodiment of the present invention, each of the first functional layer 41, the second functional layer 42, the third functional layer 43, and the fourth functional layer 44 is one of a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, and an electron injection layer.
Compared with the prior art, the white organic light emitting diode device for enhancing light extraction of the invention realizes hybridization of an Optical Tamm States (OTS) mode and a microcavity mode by using a method of combining the one-dimensional photonic crystal layer 7 and the dielectric metal dielectric layer 5, respectively enhances the light emitting efficiency of the first light emitting layer 20e and the second light emitting layer 30e, is not influenced by the cavity length, realizes the enhancement of light coupling output efficiency and the guarantee of visual angle stability, adopts the one-dimensional photonic crystal stacked by multiple layers of the second high refractive index layer 52h and the low refractive index layer 70 as a thin film packaging layer in a display panel, and has stress compared with the traditional photonic crystal structure, thereby avoiding the defects of easy cracking, peeling and flexibility caused by more inorganic materials. In addition, the dielectric metal dielectric layer 5 effectively improves the transmittance of the metal electrode under the condition of ensuring the conductivity, and further improves the light extraction efficiency of the device.
Claims (8)
1. A white organic light emitting diode device with enhanced light extraction, characterized by: the white organic light emitting diode device includes: the light-emitting diode comprises a glass substrate, and an electrode layer, a first functional layer, a first light-emitting layer, a second functional layer, a charge generation layer, a third functional layer, a second light-emitting layer, a fourth functional layer, a medium metal dielectric layer and at least two one-dimensional photonic crystal layers which are sequentially stacked on the glass substrate;
the medium metal medium layer comprises a first high-refractive-index layer, a metal layer and a second high-refractive-index layer which are sequentially arranged on the fourth functional layer in an overlapping mode, and the first high-refractive-index layer and the second high-refractive-index layer are used as medium layers;
the at least two one-dimensional photonic crystal layers are sequentially stacked on the dielectric metal medium layer, each one-dimensional photonic crystal layer comprises a second high-refractive-index layer and a low-refractive-index layer which are sequentially stacked, the refractive index of the low-refractive-index layer is lower than that of the second high-refractive-index layer, and the low-refractive-index layer is made of fluorine-containing organic materials;
and the second high-refractive-index layer of the dielectric metal dielectric layer and the second high-refractive-index layer of the one-dimensional photonic crystal layer at the lowest part are the same layer.
2. The white organic light emitting diode device according to claim 1, wherein: the first high refractive index layer has the same refractive index as the second high refractive index layer.
3. The white organic light emitting diode device according to claim 1, wherein: the refractive index of the first high refractive index layer is greater than or equal to 2, and the refractive index of the second high refractive index layer is greater than or equal to 2.
4. The white organic light emitting diode device according to claim 1, wherein: the first high refractive index layer and the second high refractive index layer are made of an inorganic material.
5. The white organic light emitting diode device according to claim 4, wherein: the first and second high refractive index layers are made of one or more of zinc sulfide, zinc oxide, zinc selenide, titanium dioxide, and molybdenum oxide.
6. The white organic light emitting diode device according to claim 1, wherein: the low refractive index layer has a refractive index of less than or equal to 1.5.
7. The white organic light emitting diode device according to claim 1, wherein: and the color emitted by the first light-emitting layer and the color emitted by the second light-emitting layer are mixed to form white light.
8. The white organic light emitting diode device according to claim 1, wherein: each of the first functional layer, the second functional layer, the third functional layer, and the fourth functional layer is one of a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, and an electron injection layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910099159.6A CN109817819B (en) | 2019-01-31 | 2019-01-31 | White Organic Light Emitting Diode Devices with Enhanced Light Extraction |
| PCT/CN2019/085179 WO2020155448A1 (en) | 2019-01-31 | 2019-04-30 | Light extraction enhanced white organic light emitting diode device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910099159.6A CN109817819B (en) | 2019-01-31 | 2019-01-31 | White Organic Light Emitting Diode Devices with Enhanced Light Extraction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109817819A CN109817819A (en) | 2019-05-28 |
| CN109817819B true CN109817819B (en) | 2020-05-12 |
Family
ID=66606211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910099159.6A Active CN109817819B (en) | 2019-01-31 | 2019-01-31 | White Organic Light Emitting Diode Devices with Enhanced Light Extraction |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109817819B (en) |
| WO (1) | WO2020155448A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111430574A (en) * | 2020-04-29 | 2020-07-17 | 武汉华星光电半导体显示技术有限公司 | Organic light-emitting device, preparation method thereof and display panel |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7367691B2 (en) * | 2003-06-16 | 2008-05-06 | Industrial Technology Research Institute | Omnidirectional one-dimensional photonic crystal and light emitting device made from the same |
| CN101969078B (en) * | 2010-08-06 | 2012-11-14 | 白金 | Selectively converging optical device |
| JP5315513B2 (en) * | 2011-07-12 | 2013-10-16 | 丸文株式会社 | Light emitting device and manufacturing method thereof |
| US8624482B2 (en) * | 2011-09-01 | 2014-01-07 | Toshiba Techno Center Inc. | Distributed bragg reflector for reflecting light of multiple wavelengths from an LED |
| CN103346267A (en) * | 2013-06-24 | 2013-10-09 | 中国科学院长春光学精密机械与物理研究所 | Active matrix organic electroluminescence display device |
| CN103367655A (en) * | 2013-07-17 | 2013-10-23 | 五邑大学 | High luminance OLED based on photonic crystal microstructure substrate and manufacturing method thereof |
| KR102407115B1 (en) * | 2015-06-25 | 2022-06-09 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
| US10690946B2 (en) * | 2015-08-26 | 2020-06-23 | Apple Inc. | Flexible photonic crystals with color-changing strain response |
| CN107017352A (en) * | 2016-01-27 | 2017-08-04 | 上海和辉光电有限公司 | A kind of OLED display and preparation method thereof |
| CN108336241A (en) * | 2018-01-19 | 2018-07-27 | 云谷（固安）科技有限公司 | OLED encapsulates film layer and preparation method thereof, OLED screen and lighting device |
| CN109119548B (en) * | 2018-08-07 | 2019-08-13 | 华中科技大学 | Top-emitting OLED device with cathode single-sided grating and preparation method thereof |
-
2019
- 2019-01-31 CN CN201910099159.6A patent/CN109817819B/en active Active
- 2019-04-30 WO PCT/CN2019/085179 patent/WO2020155448A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN109817819A (en) | 2019-05-28 |
| WO2020155448A1 (en) | 2020-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105191501B (en) | Display device, the method and electronic equipment for manufacturing the display device | |
| CN108630732A (en) | OLED display panel and preparation method thereof | |
| CN102037580A (en) | Organic led and manufacturing method thereof | |
| CN105206753A (en) | Organic light emitting element | |
| CN105826354A (en) | Array substrate, display panel and display device | |
| CN104576706B (en) | Bottom emitting type organic elctroluminescent device, its preparation method and display device | |
| CN107768401A (en) | Display device | |
| US20250241179A1 (en) | Display panel and manufacturing method therefor, and display apparatus | |
| CN106024835A (en) | Transparent display panel and preparation method thereof | |
| CN103996697B (en) | A kind of pixel cell and making method, display unit | |
| JP2014086286A (en) | Light-emitting element, and display device comprising the same | |
| CN1897294A (en) | Flat panel display and method of manufacturing the same | |
| CN109817819B (en) | White Organic Light Emitting Diode Devices with Enhanced Light Extraction | |
| WO2021258849A1 (en) | Display panel and display device | |
| CN107112435A (en) | Manufacture the method for the light extraction substrate for Organic Light Emitting Diode, the light extraction substrate for Organic Light Emitting Diode and include the Organic Light Emitting Diode of the light extraction substrate | |
| CN106716663A (en) | Flexible substrate and method of manufacturing same | |
| CN104218069A (en) | Repair method of OLED (organic light-emitting diode) display device | |
| CN118715621A (en) | Layered semiconductor device with common conductive coating across longitudinal discontinuity | |
| CN205303465U (en) | Array substrate and organic electroluminescence display device | |
| CN110729407B (en) | Display panel, method for producing the same, and display device | |
| JP2014067559A (en) | Organic electroluminescent element and light emitting device | |
| CN111435695A (en) | Light emitting device and electrode thereof | |
| TWI424226B (en) | Surface light source and display panel | |
| CN1589077B (en) | Organic light emitting device and method of forming the same | |
| CN106684217A (en) | Light-emitting device substrate and preparation method thereof and light-emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |