CN109817819A - White organic light-emitting diode devices with enhanced light extraction - Google Patents
White organic light-emitting diode devices with enhanced light extraction Download PDFInfo
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- CN109817819A CN109817819A CN201910099159.6A CN201910099159A CN109817819A CN 109817819 A CN109817819 A CN 109817819A CN 201910099159 A CN201910099159 A CN 201910099159A CN 109817819 A CN109817819 A CN 109817819A
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- emitting diode
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- 238000000605 extraction Methods 0.000 title claims abstract description 8
- 239000010410 layer Substances 0.000 claims abstract description 175
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000002346 layers by function Substances 0.000 claims abstract description 30
- 239000011521 glass Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000004038 photonic crystal Substances 0.000 claims description 11
- 229910010272 inorganic material Inorganic materials 0.000 claims description 9
- 239000011147 inorganic material Substances 0.000 claims description 9
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000005083 Zinc sulfide Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 230000005525 hole transport Effects 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 17
- 230000002708 enhancing effect Effects 0.000 abstract description 9
- 230000000007 visual effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000032798 delamination Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A kind of white OLED device that enhancing light takes out, comprising: glass substrate and sequentially stack the electrode layer being arranged on the glass substrate, the first functional layer, the first luminescent layer, the second functional layer, charge generation layer, third functional layer, the second luminescent layer, the 4th functional layer, metal clad dielectric layer and at least two 1-D photon crystal layers；Wherein, the metal clad dielectric layer includes the first high refractive index layer, metal layer and the second high refractive index layer sequentially stacked in the 4th functional layer, and first high refractive index layer and second high refractive index layer are as dielectric layer.Organic light emitting diode device dielectric-metal-dielectric structure can effectively improve electrode transmitance, further increase device light extraction efficiency.
Description
Technical field
The invention relates to a kind of LED devices, organic in particular to a kind of white that enhancing light takes out
LED device, using in conjunction with 1-D photon crystal structure and dielectric-metal-medium (Dielectric-Metal-
Dielectric, DMD) method, improve white OLED device light extraction efficiency and improve visual angle stability,
Dielectric-metal-dielectric structure can effectively improve electrode transmitance simultaneously, further increase device light extraction efficiency.In addition, one
Dimensional photonic crystal structure uses the multipair accumulation of inorganic material-organic material, solves the OLED that photonic crystal uses full-inorganic material
The big problem of stresses of parts.
Background technique
For large scale white OLED (White Organic light Emitting on market today
Diode, WOLED) display demand increasingly promoted.In the white OLED of the prior art, top emitting white has
Machine light emitting diode (Top Emission WOLED, TE WOLED) is commonly used device architecture, and top emitting white has
There are microcavity effect (Microcavity Effect) for the two sides metal electrode of machine light emitting diode.Microcavity effect can effectively change
Kind excitation purity, but serious angle change color difference can be caused simultaneously.The main method for solving this angle change color difference at present has
Inhibit microcavity effect or utilizes hydridization mode stable visual angle.
The light that the photon band gap that photonic crystal has makes to fall into photon band gap is emitted with radiation mode, realizes that improving light takes
Efficiency out, while there is one kind in metal and the 1-D photon crystal interface (One Dimensional Photonic Crystal)
Optical surface state, this surface state can effectively can realize two glow peaks with microcavity Mode Coupling form hydridization mode
Enhancing is suitably applied in the white OLED of two components and realizes that light takes out enhancing.In addition, microcavity effect has
Apparent visual angle unstability, and this optical surface state is by microcavity chamber length because do not influenced, by metal electrode thickness and light
Sub- crystal structure determines, so do not influenced by visual angle change, it can hereby based on the white OLED of this hybrid state
Guarantee visual angle stability well.
The inorganic material that 1-D photon crystal mostly uses two kinds of refractive index differences very big at present carries out A-B-A-B structure multilayer
It stacks, if being introduced into white OLED, the problem that multilayer inorganic material can bring stress big, this will cause aobvious
Show the easily rupturable and delamination of panel, while reducing the flexibility of display panel.In addition, the nucleation process of metallic film make its
When thinner thickness, film will appear different degrees of slight crack, these slight cracks destroy metallic continuity and electric conductivity, while may
The excitation that will appear metal surface plasma mode causes a large amount of losses of photon.When using dielectric layer in metal two sides, i.e.,
Dielectric-metal-medium (Dielectric-Metal-Dielectric, DMD) can then have under the premise of guaranteeing conductivity
Effect improves the continuity and transmitance of metal film, realizes the antireflective effect of metal.
Therefore, it is necessary to a kind of white OLED device that enhancing light takes out is provided, to solve prior art institute
There are the problem of.
Summary of the invention
Two kinds of refractive index differences are mostly used in view of the 1-D photon crystal of the white OLED of the prior art
Very big inorganic material carries out the problems such as multilayer stacks and causes flexible reduction and the flaw of display panel, and the present invention provides one kind
Enhance the white OLED device that light takes out, to solve the above problems.
The main purpose of the present invention is to provide a kind of white OLED devices that enhancing light takes out, including glass
Glass substrate and sequentially stack the electrode layer being arranged on the glass substrate, the first functional layer, the first luminescent layer, the second function
Ergosphere, charge generation layer, third functional layer, the second luminescent layer, the 4th functional layer, metal clad dielectric layer and at least two are one-dimensional
Layer of photonic crystals；
Wherein, the metal clad dielectric layer includes the first high refractive index sequentially stacked in the 4th functional layer
Layer, metal layer and the second high refractive index layer, first high refractive index layer and second high refractive index layer are as medium
Layer；
Wherein, at least two 1-D photon crystal layers sequentially stack on the metal clad dielectric layer, and each institute
Stating 1-D photon crystal layer includes the second high refractive index layer and low-index layer for sequentially stacking setting, and the low-refraction
The refractive index of layer is lower than the refractive index of second high refractive index layer；
Wherein, second high refractive index layer of the metal clad dielectric layer and the 1-D photon crystal of bottom
Second high refractive index layer of layer is same layer.
In an embodiment of the present invention, the folding of the refractive index of first high refractive index layer and second high refractive index layer
It is identical to penetrate rate.
In an embodiment of the present invention, the refractive index of first high refractive index layer is greater than or equal to 2, the described second high folding
The refractive index for penetrating rate layer is greater than or equal to 2.
In an embodiment of the present invention, first high refractive index layer and second high refractive index layer are with inorganic material
Manufacture.
In an embodiment of the present invention, first high refractive index layer and second high refractive index layer are with zinc sulphide
(ZnS), zinc oxide (ZnO), zinc selenide (ZnSe), titanium dioxide (TiO2), molybdenum oxide (MoO3) manufacture.
In an embodiment of the present invention, the refractive index of the low-index layer is less than or equal to 1.5.
In an embodiment of the present invention, the low-index layer is manufactured with fluorine-containing organic material.
In an embodiment of the present invention, first luminescent layer is organic light-emitting diode layer, and described second shines
Layer is organic diode luminescent layer.
In an embodiment of the present invention, the issued color of the first luminescent layer and the issued color of the second luminescent layer
White light is formed after mixing.
In an embodiment of the present invention, first functional layer, second functional layer, the third functional layer and institute
State the 4th functional layer each for hole injection layer, hole transmission layer, electronic barrier layer, hole blocking layer, electron transfer layer,
And the one of which of electron injecting layer.
Compared with prior art, the present invention enhances the white OLED device that light takes out, and utilizes one-dimensional light
The method that sub- crystal layer and metal clad dielectric layer combine, realizes optics tower nurse state (Optical Tamm States, OTS) mould
Formula and microcavity mode hydridization, enhance the luminous efficiency of the first luminescent layer and the second luminescent layer, while this optics tower nurse state respectively
It is not influenced by chamber length, realize enhancing optical coupling output efficiency and guarantees visual angle stability, while is low using the second high refractive index layer-
The 1-D photon crystal of as many as index layer layer heap product using as the thin-film encapsulation layer in display panel, and with conventional photonic crystalline substance
Body structure compare have smaller stress, avoid because inorganic material it is more caused by easily rupturable, delamination and with it is flexible incompatible
Property.Furthermore metal clad dielectric layer effectively improves the transmitance of metal electrode in the case where guaranteeing conductivity, further improves
The light extraction efficiency of device.
For above content of the invention can be clearer and more comprehensible, preferred embodiment is cited below particularly, cooperates institute's accompanying drawings, makees detailed
Carefully it is described as follows:
Detailed description of the invention
Fig. 1 is the side sectional view for the white OLED device that present invention enhancing light takes out.
Specific embodiment
Please refer to Fig. 1, the present invention enhances the white OLED device that light takes out, including glass substrate 10, with
And sequentially stack the electrode layer 11 being arranged on the glass substrate 10, the first functional layer 41, the first luminescent layer 20e, the second function
Ergosphere 42, charge generation layer 22, third functional layer 43, the second luminescent layer 30e, the 4th functional layer 44, metal clad dielectric layer 5 with
And at least two 1-D photon crystal layers 7.
The metal clad dielectric layer 5 includes sequentially stacking the first high refractive index layer in the 4th functional layer 44
51h, metal layer 60m and the second high refractive index layer 52h, the first high refractive index layer 51h and second high refractive index
Layer 52h is as dielectric layer.
At least two 1-D photon crystal layers 7 sequentially stack on the metal clad dielectric layer 5, and each described one
Second high refractive index layer 52h and low-index layer 70 of the dimensional photonic crystal layer 7 including sequentially stacking setting, and the low refraction
The refractive index of rate layer 70 is lower than the refractive index of the second high refractive index layer 52h.The non-knot of at least two 1-D photon crystal layer 7
Structure and be conducive to large area preparation, the light extraction efficiency of white OLED device can be improved, weaken answering for device
Power, and can be used as the thin-film encapsulation layer of device.
The second high refractive index layer 52h of the metal clad dielectric layer 5 and the 1-D photon crystal of bottom
Second high refractive index layer 52h of layer 7 is same layer.The metal clad dielectric layer 5 can increase the transmitance of metal electrode layer 11.
In an embodiment of the present invention, the refractive index of the first high refractive index layer 51h and second high refractive index layer
The refractive index of 52h is identical.In an embodiment of the present invention, the refractive index of the first high refractive index layer 51h is greater than or equal to 2,
The refractive index of the second high refractive index layer 52h is greater than or equal to 2.In an embodiment of the present invention, first high refractive index
Layer 51h and the second high refractive index layer 52h is manufactured with inorganic material.
In an embodiment of the present invention, the first high refractive index layer 51h and the second high refractive index layer 52h are with sulphur
Change zinc (ZnS), zinc oxide (ZnO), zinc selenide (ZnSe), titanium dioxide (TiO2), molybdenum oxide (MoO3) manufacture.In the present invention one
In embodiment, the refractive index of the low-index layer 70 is less than or equal to 1.5.In an embodiment of the present invention, the low refraction
Rate layer 70 is manufactured with fluorine-containing organic material.
In an embodiment of the present invention, the first luminescent layer 20e is organic light-emitting diode layer, second hair
Photosphere 30e is organic diode luminescent layer.In an embodiment of the present invention, the issued color of the first luminescent layer 20e and institute
White light is formed after stating the second issued color mixing of luminescent layer 30e.
In an embodiment of the present invention, first functional layer 41, second functional layer 42, the third functional layer 43
And each of the 4th functional layer 44 is hole injection layer, hole transmission layer, electronic barrier layer, hole blocking layer, electricity
The one of which of sub- transport layer and electron injecting layer.
Compared with prior art, the present invention enhances the white OLED device that light takes out, and utilizes one-dimensional light
The method that sub- crystal layer 7 and metal clad dielectric layer 5 combine, is realized optics tower nurse state (Optical Tamm States, OTS)
Mode and microcavity mode hydridization, enhance the luminous efficiency of the first luminescent layer 20e and the second luminescent layer 30e, while this light respectively
Learn tower nurse state is not influenced by chamber length, is realized enhancing optical coupling output efficiency and is guaranteed visual angle stability, while using the second high folding
The 1-D photon crystal of as many as rate layer 52h, low-index layer 70 layer heap product is penetrated using as the thin-film encapsulation layer in display panel, and
And compared with conventional photonic crystals structure have smaller stress, avoid because inorganic material it is more caused by easily rupturable, delamination and
With incompatibility flexible.Furthermore metal clad dielectric layer 5 effectively improves the saturating of metal electrode in the case where guaranteeing conductivity
Rate is crossed, the light extraction efficiency of device is further improved.
Claims (10)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910099159.6A CN109817819B (en) | 2019-01-31 | 2019-01-31 | White Organic Light Emitting Diode Devices with Enhanced Light Extraction |
| PCT/CN2019/085179 WO2020155448A1 (en) | 2019-01-31 | 2019-04-30 | Light extraction enhanced white organic light emitting diode device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910099159.6A CN109817819B (en) | 2019-01-31 | 2019-01-31 | White Organic Light Emitting Diode Devices with Enhanced Light Extraction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109817819A true CN109817819A (en) | 2019-05-28 |
| CN109817819B CN109817819B (en) | 2020-05-12 |
Family
ID=66606211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910099159.6A Active CN109817819B (en) | 2019-01-31 | 2019-01-31 | White Organic Light Emitting Diode Devices with Enhanced Light Extraction |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109817819B (en) |
| WO (1) | WO2020155448A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111430574A (en) * | 2020-04-29 | 2020-07-17 | 武汉华星光电半导体显示技术有限公司 | Organic light-emitting device, preparation method thereof and display panel |
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| US20040252509A1 (en) * | 2003-06-16 | 2004-12-16 | Chung-Hsiang Lin | Omnidirectional one-dimensional photonic crystal and light emitting device made from the same |
| CN101969078A (en) * | 2010-08-06 | 2011-02-09 | 白金 | Selectively converging optical device |
| CN103346267A (en) * | 2013-06-24 | 2013-10-09 | 中国科学院长春光学精密机械与物理研究所 | Active matrix organic electroluminescence display device |
| CN103367655A (en) * | 2013-07-17 | 2013-10-23 | 五邑大学 | High luminance OLED based on photonic crystal microstructure substrate and manufacturing method thereof |
| US20170059890A1 (en) * | 2015-08-26 | 2017-03-02 | Apple Inc. | Flexible photonic crystals with color-changing strain response |
| CN107017352A (en) * | 2016-01-27 | 2017-08-04 | 上海和辉光电有限公司 | A kind of OLED display and preparation method thereof |
| CN108336241A (en) * | 2018-01-19 | 2018-07-27 | 云谷（固安）科技有限公司 | OLED encapsulates film layer and preparation method thereof, OLED screen and lighting device |
| CN109119548A (en) * | 2018-08-07 | 2019-01-01 | 华中科技大学 | Top emission OLED device and preparation method thereof with cathode single side grating |
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| JP5315513B2 (en) * | 2011-07-12 | 2013-10-16 | 丸文株式会社 | Light emitting device and manufacturing method thereof |
| US8624482B2 (en) * | 2011-09-01 | 2014-01-07 | Toshiba Techno Center Inc. | Distributed bragg reflector for reflecting light of multiple wavelengths from an LED |
| KR102407115B1 (en) * | 2015-06-25 | 2022-06-09 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
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2019
- 2019-01-31 CN CN201910099159.6A patent/CN109817819B/en active Active
- 2019-04-30 WO PCT/CN2019/085179 patent/WO2020155448A1/en not_active Ceased
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040252509A1 (en) * | 2003-06-16 | 2004-12-16 | Chung-Hsiang Lin | Omnidirectional one-dimensional photonic crystal and light emitting device made from the same |
| CN101969078A (en) * | 2010-08-06 | 2011-02-09 | 白金 | Selectively converging optical device |
| CN103346267A (en) * | 2013-06-24 | 2013-10-09 | 中国科学院长春光学精密机械与物理研究所 | Active matrix organic electroluminescence display device |
| CN103367655A (en) * | 2013-07-17 | 2013-10-23 | 五邑大学 | High luminance OLED based on photonic crystal microstructure substrate and manufacturing method thereof |
| US20170059890A1 (en) * | 2015-08-26 | 2017-03-02 | Apple Inc. | Flexible photonic crystals with color-changing strain response |
| CN107017352A (en) * | 2016-01-27 | 2017-08-04 | 上海和辉光电有限公司 | A kind of OLED display and preparation method thereof |
| CN108336241A (en) * | 2018-01-19 | 2018-07-27 | 云谷（固安）科技有限公司 | OLED encapsulates film layer and preparation method thereof, OLED screen and lighting device |
| CN109119548A (en) * | 2018-08-07 | 2019-01-01 | 华中科技大学 | Top emission OLED device and preparation method thereof with cathode single side grating |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2020155448A1 (en) | 2020-08-06 |
| CN109817819B (en) | 2020-05-12 |
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