CN106058008A - Method for manufacturing LED metal substrate - Google Patents
Method for manufacturing LED metal substrate Download PDFInfo
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- CN106058008A CN106058008A CN201610396241.1A CN201610396241A CN106058008A CN 106058008 A CN106058008 A CN 106058008A CN 201610396241 A CN201610396241 A CN 201610396241A CN 106058008 A CN106058008 A CN 106058008A
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- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 239000002184 metal Substances 0.000 title claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 15
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000004332 silver Substances 0.000 claims abstract description 10
- 238000005520 cutting process Methods 0.000 claims abstract description 8
- 238000011161 development Methods 0.000 claims abstract description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 9
- 239000003963 antioxidant agent Substances 0.000 claims description 9
- 230000003078 antioxidant effect Effects 0.000 claims description 9
- 238000012822 chemical development Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 238000005192 partition Methods 0.000 claims description 3
- 238000002203 pretreatment Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000007788 roughening Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 235000006708 antioxidants Nutrition 0.000 claims 3
- 239000000356 contaminant Substances 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 238000011536 re-plating Methods 0.000 claims 1
- 230000002000 scavenging effect Effects 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 9
- 239000011810 insulating material Substances 0.000 abstract description 9
- 238000007747 plating Methods 0.000 abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- 239000010949 copper Substances 0.000 abstract description 5
- 238000003475 lamination Methods 0.000 abstract description 3
- 238000009713 electroplating Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 2
- 239000010956 nickel silver Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8581—Means for heat extraction or cooling characterised by their material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling
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- Led Device Packages (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
本发明公开一种LED金属基板的制作方法，包括以下步骤：(1)前处理、（2）压膜、（3）菲林对位、（4）曝光、（5）显影、（6）蚀刻、（7）退膜、（8）表面醋化、（9）镀银、（10）绝缘材料制作、（11）切割等工序。本发明采用半蚀刻生产出LED晶片的铜基板，尺寸精度高、散热性能好。The invention discloses a method for manufacturing an LED metal substrate, which comprises the following steps: (1) pretreatment, (2) lamination, (3) film alignment, (4) exposure, (5) development, (6) etching, (7) Film removal, (8) surface vinegarization, (9) silver plating, (10) insulating material production, (11) cutting and other processes. The invention adopts semi-etching to produce the copper substrate of the LED chip, which has high dimensional accuracy and good heat dissipation performance.
Description
技术领域technical field
本发明涉及一种LED金属基板的制作方法,属于LED基板技术领域。The invention relates to a method for manufacturing an LED metal substrate, belonging to the technical field of LED substrates.
背景技术Background technique
LED是一个光电元件，其工作过程中只有10%-40%的电能转换成光能，其余的电能几乎都转换成热能，使LED的温度升高。LED升温是LED性能劣化及失效的主要原因。LED is a photoelectric component, only 10%-40% of the electrical energy is converted into light energy during its working process, and the rest of the electrical energy is almost all converted into heat energy, which increases the temperature of the LED. LED heating is the main cause of LED performance degradation and failure.
在大功率LED中，散热是个大问题，如不加散热措施，则大功率LED的灯芯温度会急速上升，当其温度上升超过最大允许温度时（一般是150℃），大功率LED会因为过热而损坏。In high-power LEDs, heat dissipation is a big problem. If no heat dissipation measures are taken, the temperature of the wick of high-power LEDs will rise rapidly. And damaged.
为了使LED方便散热，LED模组具有一块基板，基板上设有LED发光元件，通常，基板为陶瓷基板或者金属基板。由于LED发光元件工作时产生大量的热量，因此，基板需要具备良好的导热、散热能力。因为方便散热的原因，铜基板在LED行业已经得到应用，但是现有技术的金属基板都是作为整个LED模组的基板，在金属基板上制作绝缘层和线路层，再在线路层上点胶安装LED芯片，现有技术从LED模组基板的角度解决散热问题，提高散热效果。但是现有技术中没有解决LED芯片点胶安装处的散热问题。本发明提出以铜金属基板作为LED芯片的基板。In order to facilitate the heat dissipation of the LED, the LED module has a substrate on which the LED light-emitting element is arranged. Usually, the substrate is a ceramic substrate or a metal substrate. Since LED light-emitting elements generate a large amount of heat during operation, the substrate needs to have good heat conduction and heat dissipation capabilities. Because of the convenience of heat dissipation, copper substrates have been used in the LED industry, but the metal substrates in the prior art are used as the substrate of the entire LED module. An insulating layer and a circuit layer are made on the metal substrate, and then glue is dispensed on the circuit layer. Installing LED chips, the existing technology solves the heat dissipation problem from the perspective of the LED module substrate and improves the heat dissipation effect. However, the prior art does not solve the problem of heat dissipation at the place where the LED chip is dispensed and installed. The present invention proposes to use the copper metal substrate as the substrate of the LED chip.
发明内容Contents of the invention
本发明的目的在于提供一种LED金属基板的制作方法，采用半蚀刻生产出LED晶片的铜基板，可有效解决LED单元散热问题。The object of the present invention is to provide a method for manufacturing an LED metal substrate. The copper substrate of the LED chip is produced by half-etching, which can effectively solve the heat dissipation problem of the LED unit.
为实现上述目的，本发明采用了下述技术方案。In order to achieve the above object, the present invention adopts the following technical solutions.
一种LED金属基板的制作方法，其特征在于包括以下步骤：A method for manufacturing an LED metal substrate, characterized in that it comprises the following steps:
（1）前处理：以0.1-0.2mm厚的铜合金板为原材料，进行除油处理，然后用纯水清洗干净，去除表面污染物；(1) Pretreatment: use 0.1-0.2mm thick copper alloy plate as raw material, carry out degreasing treatment, and then clean it with pure water to remove surface pollutants;
（2）压膜：使用真空压膜机在涂有抗氧化剂层的金属板表面成形感光干膜；(2) Lamination: Use a vacuum laminator to form a photosensitive dry film on the surface of the metal plate coated with an antioxidant layer;
（3）菲林对位：根据设计图形进行双面菲林对位;(3) Film alignment: double-sided film alignment according to the design graphics;
（4）曝光：采用平行曝光机进行曝光；(4) Exposure: use a parallel exposure machine for exposure;
（5）显影：化学显影曝光后的感光干膜，露出待蚀刻的图形；(5) Development: the photosensitive dry film exposed by chemical development, revealing the graphics to be etched;
（6）蚀刻：反射杯罩成型区的蚀刻槽的蚀刻深度为板厚的一半得到半蚀刻槽；金属基板单元的隔断槽采用全蚀刻得到全蚀刻槽；(6) Etching: The etching depth of the etching groove in the reflective cup forming area is half of the plate thickness to obtain a half-etched groove; the partition groove of the metal substrate unit is fully etched to obtain a fully etched groove;
（7）退膜：感光干膜全部退掉；(7) Removal of film: all photosensitive dry films are removed;
（8）表面粗化：利用化学和物理方法对基板表明实行粗化处理;(8) Surface roughening: use chemical and physical methods to roughen the surface of the substrate;
（9）镀银：根据实际应用选择电镀金属层，可能是先电镀镍，再电镀银，也可以是直接镀银，直接镀银厚度较镀镍银厚;(9) Silver plating: select the electroplating metal layer according to the actual application, it may be nickel electroplating first, then silver electroplating, or direct silver plating, the thickness of direct silver plating is thicker than nickel silver plating;
（10） 绝缘材料加工：在全蚀刻槽处填充绝缘材料，此处的绝缘材料是起到连接LED金属基板单元的两块金属板的作用和绝缘作用；(10) Insulation material processing: fill the insulating material at the full etching groove, where the insulating material is used to connect the two metal plates of the LED metal substrate unit and to insulate;
（11） 切割：沿半蚀刻槽切割，得到LED金属基板单元。(11) Cutting: cutting along the half-etched groove to obtain the LED metal substrate unit.
进一步优选，退膜后进行表面醋化，之后镀银，之后再进行绝缘材料加工。More preferably, the surface is esterified after the film is stripped, then silver-plated, and then the insulating material is processed.
进一步优选，绝缘材料加工时，在半蚀刻槽上制作反射杯罩。绝缘材料加工完毕后，在LED金属基板单元上贴附LED晶片，并制作荧光材料层，最后再切割成单个的LED金属基板单元。Further preferably, when the insulating material is processed, the reflective cup is made on the half-etched groove. After the insulating material is processed, the LED chip is attached on the LED metal substrate unit, and the fluorescent material layer is made, and finally cut into a single LED metal substrate unit.
进一步优选，还可在前处理阶段，清洗干净后，在铜合金板表面制作抗氧化剂层保护铜合金板不被氧化；在退膜后化学清除抗氧化剂层。Further preferably, in the pre-treatment stage, after cleaning, an antioxidant layer is formed on the surface of the copper alloy plate to protect the copper alloy plate from oxidation; and the antioxidant layer is chemically removed after the film is removed.
本发明的有益效果：采用半蚀刻生产出LED晶片的铜基板，尺寸精度高、散热性能好。The beneficial effect of the present invention is that the copper substrate of the LED chip is produced by half-etching, which has high dimensional accuracy and good heat dissipation performance.
具体实施方式detailed description
下面将对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
一种LED金属基板的制作方法，其特征在于包括以下步骤：A method for manufacturing an LED metal substrate, characterized in that it comprises the following steps:
（1）前处理：以0.1-0.2mm厚的铜合金板为原材料，进行除油处理，然后用纯水清洗干净，去除表面污染物；(1) Pretreatment: use 0.1-0.2mm thick copper alloy plate as raw material, carry out degreasing treatment, and then clean it with pure water to remove surface pollutants;
（2）压膜：使用真空压膜机在涂有抗氧化剂层的金属板表面成形感光干膜；(2) Lamination: Use a vacuum laminator to form a photosensitive dry film on the surface of the metal plate coated with an antioxidant layer;
（3）菲林对位：根据设计图形进行双面菲林对位;(3) Film alignment: double-sided film alignment according to the design graphics;
（4） 曝光：采用平行曝光机进行曝光；(4) Exposure: use a parallel exposure machine for exposure;
（5） 显影：化学显影曝光后的感光干膜，露出待蚀刻的图形；(5) Development: the photosensitive dry film exposed by chemical development, revealing the pattern to be etched;
（6）蚀刻：反射杯罩成型区的蚀刻槽的蚀刻深度为板厚的一半得到半蚀刻槽；金属基板单元的隔断槽采用全蚀刻得到全蚀刻槽；(6) Etching: The etching depth of the etching groove in the reflective cup forming area is half of the plate thickness to obtain a half-etched groove; the partition groove of the metal substrate unit is fully etched to obtain a fully etched groove;
（7）退膜：感光干膜全部退掉；(7) Removal of film: all photosensitive dry films are removed;
（8） 表面粗化：利用化学和物理方法对基板表明实行粗化处理;(8) Surface roughening: use chemical and physical methods to roughen the surface of the substrate;
（9）镀银：根据实际应用选择电镀金属层，可能是先电镀镍，再电镀银，也可以是直接镀银，直接镀银厚度较镀镍银厚。(9) Silver plating: The electroplating metal layer is selected according to the actual application. It may be nickel electroplating first, then silver electroplating, or direct silver plating. The thickness of direct silver plating is thicker than nickel silver plating.
（10） 绝缘材料加工：在半蚀刻槽上制作反射杯罩，在全蚀刻槽处填充绝缘材料，此处的绝缘材料是起到连接LED金属基板单元的两块金属板的作用和绝缘作用；绝缘材料加工完毕后，在LED金属基板单元上贴附LED晶片，并制作荧光材料层(10) Insulation material processing: make a reflective cup cover on the half-etched groove, and fill the insulating material at the full-etched groove. The insulating material here is used to connect the two metal plates of the LED metal substrate unit and to insulate; After the insulating material is processed, the LED chip is attached to the LED metal substrate unit, and the fluorescent material layer is made
（11） 切割：沿半蚀刻槽切割，得到LED金属基板单元。(11) Cutting: cutting along the half-etched groove to obtain the LED metal substrate unit.
进一步优选，还可在前处理阶段，清洗干净后，在铜合金板表面制作抗氧化剂层保护铜合金板不被氧化；在退膜后化学清除抗氧化剂层。Further preferably, in the pre-treatment stage, after cleaning, an antioxidant layer is formed on the surface of the copper alloy plate to protect the copper alloy plate from oxidation; and the antioxidant layer is chemically removed after the film is removed.
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书内容所作的等效结构或等效流程变换，或直接或间接运用在其它相关的技术领域，均同理包括在本发明的专利保护范围内。The above descriptions are only examples of the present invention, and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made by using the content of the description of the present invention, or directly or indirectly used in other related technical fields, shall be The same reasoning is included in the patent protection scope of the present invention.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107969069A (en) * | 2018-01-12 | 2018-04-27 | 深圳恒宝士线路板有限公司 | A kind of production method of the separated metal substrate of thermoelectricity |
| CN114340194A (en) * | 2021-12-31 | 2022-04-12 | 乐健科技（珠海）有限公司 | Circuit board preparation method |
| CN116121752A (en) * | 2022-12-26 | 2023-05-16 | 东莞赛诺高德蚀刻科技有限公司 | Metal radiating fin etching method with side wall protection and metal radiating fin |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107969069A (en) * | 2018-01-12 | 2018-04-27 | 深圳恒宝士线路板有限公司 | A kind of production method of the separated metal substrate of thermoelectricity |
| CN114340194A (en) * | 2021-12-31 | 2022-04-12 | 乐健科技（珠海）有限公司 | Circuit board preparation method |
| CN114340194B (en) * | 2021-12-31 | 2026-01-02 | 乐健科技（珠海）有限公司 | Circuit board manufacturing method |
| CN116121752A (en) * | 2022-12-26 | 2023-05-16 | 东莞赛诺高德蚀刻科技有限公司 | Metal radiating fin etching method with side wall protection and metal radiating fin |
| CN116121752B (en) * | 2022-12-26 | 2023-10-13 | 东莞赛诺高德蚀刻科技有限公司 | Metal radiating fin etching method with side wall protection and metal radiating fin |
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