Classifications

• • H10W15/00—
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
  • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
  • H10D84/401—Combinations of FETs or IGBTs with BJTs
  • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
  • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
  • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
• • H10P14/61—
• • H10W10/00—
• • H10W10/01—
• • H10W10/012—
• • H10W10/0121—
• • H10W10/0126—
• • H10W10/13—
• • H10W15/01—

Applications Claiming Priority (1)

Publications (1)

Family

ID=19810548

Family Applications (1)

Country Status (11)

Families Citing this family (2)

• 1971
  • 1971-07-06 CA CA117451A patent/CA933675A/en not_active Expired
  • 1971-07-07 CH CH1001271A patent/CH539949A/en not_active IP Right Cessation
  • 1971-07-07 GB GB3184371A patent/GB1363515A/en not_active Expired
  • 1971-07-07 SE SE7108803A patent/SE383581B/en unknown
  • 1971-07-08 BE BE769733A patent/BE769733R/en active
  • 1971-07-08 ES ES393039A patent/ES393039A2/en not_active Expired
  • 1971-07-08 AT AT594171A patent/AT344788B/en not_active IP Right Cessation
  • 1971-07-09 IT IT26784/71A patent/IT995017B/en active
• 1975
  • 1975-11-27 JP JP50141236A patent/JPS522273B2/ja not_active Expired
• 1976
  • 1976-09-23 HK HK592/76*UA patent/HK59276A/en unknown
  • 1976-09-23 HK HK595/76*UA patent/HK59576A/en unknown
• 1980
  • 1980-04-08 NL NLAANVRAGE8002038,A patent/NL176414C/en not_active IP Right Cessation

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