CH536029A - Method of manufacturing a monolithic semiconductor device - Google Patents
Method of manufacturing a monolithic semiconductor deviceInfo
- Publication number
- CH536029A CH536029A CH407572A CH407572A CH536029A CH 536029 A CH536029 A CH 536029A CH 407572 A CH407572 A CH 407572A CH 407572 A CH407572 A CH 407572A CH 536029 A CH536029 A CH 536029A
- Authority
- CH
- Switzerland
- Prior art keywords
- manufacturing
- semiconductor device
- monolithic semiconductor
- monolithic
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
- H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H10P32/15—
-
- H10W10/031—
-
- H10W10/30—
-
- H10W15/00—
-
- H10W15/01—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13816171A | 1971-04-28 | 1971-04-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH536029A true CH536029A (en) | 1973-04-15 |
Family
ID=22480723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH407572A CH536029A (en) | 1971-04-28 | 1972-03-20 | Method of manufacturing a monolithic semiconductor device |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPS5037507B1 (en) |
| AU (1) | AU459156B2 (en) |
| CA (1) | CA966231A (en) |
| CH (1) | CH536029A (en) |
| DE (1) | DE2219696C3 (en) |
| ES (2) | ES402164A1 (en) |
| FR (1) | FR2134360B1 (en) |
| GB (1) | GB1358612A (en) |
| IT (1) | IT947674B (en) |
| NL (1) | NL7204804A (en) |
| SE (1) | SE384949B (en) |
| ZA (1) | ZA721782B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2608267A1 (en) * | 1976-02-28 | 1977-09-08 | Itt Ind Gmbh Deutsche | METHOD OF MANUFACTURING A MONOLITHIC INTEGRATED CIRCUIT |
| JPS5851561A (en) * | 1981-09-24 | 1983-03-26 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPS58225663A (en) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | Manufacture of semiconductor device |
| JPS5955052A (en) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
| JPS59177960A (en) * | 1983-03-28 | 1984-10-08 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| IT1214808B (en) * | 1984-12-20 | 1990-01-18 | Ates Componenti Elettron | TICO AND SEMICONDUCTOR PROCESS FOR THE FORMATION OF A BURIED LAYER AND OF A COLLECTOR REGION IN A MONOLI DEVICE |
| US4727046A (en) * | 1986-07-16 | 1988-02-23 | Fairchild Semiconductor Corporation | Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases |
| KR890004420B1 (en) * | 1986-11-04 | 1989-11-03 | 삼성반도체통신 주식회사 | Manufacturing method of bicmos device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3293087A (en) * | 1963-03-05 | 1966-12-20 | Fairchild Camera Instr Co | Method of making isolated epitaxial field-effect device |
| US3481801A (en) * | 1966-10-10 | 1969-12-02 | Frances Hugle | Isolation technique for integrated circuits |
| US3479233A (en) * | 1967-01-16 | 1969-11-18 | Ibm | Method for simultaneously forming a buried layer and surface connection in semiconductor devices |
| US3440503A (en) * | 1967-05-31 | 1969-04-22 | Westinghouse Electric Corp | Integrated complementary mos-type transistor structure and method of making same |
| GB1280022A (en) * | 1968-08-30 | 1972-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
-
1972
- 1972-02-18 IT IT20713/72A patent/IT947674B/en active
- 1972-03-09 GB GB1090072A patent/GB1358612A/en not_active Expired
- 1972-03-15 ZA ZA721782A patent/ZA721782B/en unknown
- 1972-03-16 FR FR727209920A patent/FR2134360B1/fr not_active Expired
- 1972-03-20 CH CH407572A patent/CH536029A/en not_active IP Right Cessation
- 1972-03-28 SE SE7203982A patent/SE384949B/en unknown
- 1972-04-07 JP JP47034578A patent/JPS5037507B1/ja active Pending
- 1972-04-11 NL NL7204804A patent/NL7204804A/xx unknown
- 1972-04-20 CA CA140074356-62*AA patent/CA966231A/en not_active Expired
- 1972-04-21 DE DE2219696A patent/DE2219696C3/en not_active Expired
- 1972-04-27 ES ES402164A patent/ES402164A1/en not_active Expired
- 1972-04-27 AU AU41642/72A patent/AU459156B2/en not_active Expired
- 1972-04-27 ES ES402165A patent/ES402165A1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA966231A (en) | 1975-04-15 |
| ZA721782B (en) | 1973-10-31 |
| SE384949B (en) | 1976-05-24 |
| GB1358612A (en) | 1974-07-03 |
| IT947674B (en) | 1973-05-30 |
| NL7204804A (en) | 1972-10-31 |
| AU459156B2 (en) | 1975-03-20 |
| FR2134360A1 (en) | 1972-12-08 |
| FR2134360B1 (en) | 1974-06-28 |
| ES402165A1 (en) | 1975-03-16 |
| DE2219696B2 (en) | 1978-04-06 |
| JPS5037507B1 (en) | 1975-12-03 |
| DE2219696C3 (en) | 1982-02-18 |
| ES402164A1 (en) | 1975-03-01 |
| DE2219696A1 (en) | 1972-11-16 |
| AU4164272A (en) | 1973-12-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |