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CA2349032A1 - Methode de gravure a sec de sio2 verticale et en profondeur - Google Patents

Methode de gravure a sec de sio2 verticale et en profondeur Download PDF

Info

Publication number
CA2349032A1
CA2349032A1 CA002349032A CA2349032A CA2349032A1 CA 2349032 A1 CA2349032 A1 CA 2349032A1 CA 002349032 A CA002349032 A CA 002349032A CA 2349032 A CA2349032 A CA 2349032A CA 2349032 A1 CA2349032 A1 CA 2349032A1
Authority
CA
Canada
Prior art keywords
sio2
etching
deep
etch rate
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002349032A
Other languages
English (en)
Inventor
Boris Lamontagne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
OPTENIA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OPTENIA Inc filed Critical OPTENIA Inc
Priority to CA002349032A priority Critical patent/CA2349032A1/fr
Priority to PCT/CA2002/000784 priority patent/WO2002097874A1/fr
Publication of CA2349032A1 publication Critical patent/CA2349032A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • H10P50/283—

Landscapes

  • Drying Of Semiconductors (AREA)
CA002349032A 2001-05-28 2001-05-28 Methode de gravure a sec de sio2 verticale et en profondeur Abandoned CA2349032A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CA002349032A CA2349032A1 (fr) 2001-05-28 2001-05-28 Methode de gravure a sec de sio2 verticale et en profondeur
PCT/CA2002/000784 WO2002097874A1 (fr) 2001-05-28 2002-05-28 Procede de gravure seche verticale et profonde de dielectriques

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA002349032A CA2349032A1 (fr) 2001-05-28 2001-05-28 Methode de gravure a sec de sio2 verticale et en profondeur

Publications (1)

Publication Number Publication Date
CA2349032A1 true CA2349032A1 (fr) 2002-11-28

Family

ID=4169126

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002349032A Abandoned CA2349032A1 (fr) 2001-05-28 2001-05-28 Methode de gravure a sec de sio2 verticale et en profondeur

Country Status (2)

Country Link
CA (1) CA2349032A1 (fr)
WO (1) WO2002097874A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9576773B2 (en) * 2013-07-30 2017-02-21 Corporation For National Research Initiatives Method for etching deep, high-aspect ratio features into glass, fused silica, and quartz materials

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5468342A (en) * 1994-04-28 1995-11-21 Cypress Semiconductor Corp. Method of etching an oxide layer
US5814563A (en) * 1996-04-29 1998-09-29 Applied Materials, Inc. Method for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gas
US5711851A (en) * 1996-07-12 1998-01-27 Micron Technology, Inc. Process for improving the performance of a temperature-sensitive etch process

Also Published As

Publication number Publication date
WO2002097874A1 (fr) 2002-12-05

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Legal Events

Date Code Title Description
FZDE Discontinued