CA2349032A1 - Method for deep and vertical dry etching of sio2 - Google Patents
Method for deep and vertical dry etching of sio2 Download PDFInfo
- Publication number
- CA2349032A1 CA2349032A1 CA002349032A CA2349032A CA2349032A1 CA 2349032 A1 CA2349032 A1 CA 2349032A1 CA 002349032 A CA002349032 A CA 002349032A CA 2349032 A CA2349032 A CA 2349032A CA 2349032 A1 CA2349032 A1 CA 2349032A1
- Authority
- CA
- Canada
- Prior art keywords
- sio2
- etching
- deep
- etch rate
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H10P50/283—
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
A method of etching SiO2 to produce vertical sidewalls is disclosed wherein the process is carried out at a high etch rate, using low energy ion bombardment, using C4F8 as a main etchant gas, and controlling the SiO2 sidewall profiles using the temperature of the sample.
Description
Method for deep and vertical dry etching of Si02 Background of the Invention 1. Field of the Invention The invention relates to the field of semiconductor fabrication and in particular to a method for deep and vertical dry etching of Si02.
2. Description of Related Art The present technology used to etch Si02 does not f>rovide the right set of etch rate, verticality and control of sidewall profile. Deep (5-10 ~.m), vertical and smooth etching is critical for the fabrication of SiOz ;planar waveguides, especially for reflective gratings. Non-verticality of only 2 def; (88 deg instead of 90 deg) can introduce additional optical losses of 3 dB in some cases.
Deep etching has been accomplished by using various gases (CHF3/CF4/H2) and relatively high ion energy:
High ion energy implies low mask selectivity and difficulties to obtain vertical sidewalls. The high ion energy also reduces the capability to control efficiently the sample temperature.
Summary of the Invention According to the present invention there is provided a method of etching Si02 to produce vertical sidewalls, comprising:
providing a high etch rate;
using low energy ion bombardment;
using C4F8 as a main etchant gas;
and controlling the SiOz sidewall profiles using the temperature of the sample.
The high etch rate can be provided with a high density plasma source. An inductively coupled plasma (ICP) source enables the use of low energy ion bombardment (thus high etching selectivity with metal mask): The use of C4F$
as the main etchant gas gives a high amount of etching radicals (high etch rate).
It is important to use the right combination of these four elements. For example, a good choice of parameters (pressure,.gas, ion energy, etc.) could allow the precise control of the etching verticality using the sample temperature as the control parameter.
Brief Description of the Drawings The invention will now be described in more detail, by way of example, only with reference to the accompanying drawings, in which:-Figure 1 is an SEM image of a Si02 ridge etched using the inventive process.
Detailed Description of the Invention A vertical sidewall was etched using a a high density plasma source to achieve high etch rate, and an inductively coupled plasma (ICP) source to enabling the use of low energy ion bombardment (thus high etching selectivity with metal mask).
C4F8 was used as the main etchant gas, giving high amount of etching radicals (high etch rate). The Si02 sidewall profiles were carefully controlled by using the temperature of the sample.
The right combination of the four elements above should be carefully chosen.
Moreover a good choice of process parameters (pressure, gas, ion energy, etc) allows the precise control of the etching verticality by using the sample temperature as the control parameter.
Deep etching has been accomplished by using various gases (CHF3/CF4/H2) and relatively high ion energy:
High ion energy implies low mask selectivity and difficulties to obtain vertical sidewalls. The high ion energy also reduces the capability to control efficiently the sample temperature.
Summary of the Invention According to the present invention there is provided a method of etching Si02 to produce vertical sidewalls, comprising:
providing a high etch rate;
using low energy ion bombardment;
using C4F8 as a main etchant gas;
and controlling the SiOz sidewall profiles using the temperature of the sample.
The high etch rate can be provided with a high density plasma source. An inductively coupled plasma (ICP) source enables the use of low energy ion bombardment (thus high etching selectivity with metal mask): The use of C4F$
as the main etchant gas gives a high amount of etching radicals (high etch rate).
It is important to use the right combination of these four elements. For example, a good choice of parameters (pressure,.gas, ion energy, etc.) could allow the precise control of the etching verticality using the sample temperature as the control parameter.
Brief Description of the Drawings The invention will now be described in more detail, by way of example, only with reference to the accompanying drawings, in which:-Figure 1 is an SEM image of a Si02 ridge etched using the inventive process.
Detailed Description of the Invention A vertical sidewall was etched using a a high density plasma source to achieve high etch rate, and an inductively coupled plasma (ICP) source to enabling the use of low energy ion bombardment (thus high etching selectivity with metal mask).
C4F8 was used as the main etchant gas, giving high amount of etching radicals (high etch rate). The Si02 sidewall profiles were carefully controlled by using the temperature of the sample.
The right combination of the four elements above should be carefully chosen.
Moreover a good choice of process parameters (pressure, gas, ion energy, etc) allows the precise control of the etching verticality by using the sample temperature as the control parameter.
Claims (3)
1. A method of etching SiO2 to produce vertical sidewalls, comprising:
providing a high etch rate;
using low energy ion bombardment;
using C4F8 as a main etchant gas;
and controlling the SiO2 sidewall profiles using the temperature of the sample.
providing a high etch rate;
using low energy ion bombardment;
using C4F8 as a main etchant gas;
and controlling the SiO2 sidewall profiles using the temperature of the sample.
2. A method as claimed in claim 1, wherein the high etch rate is provided with a high density plasma source.
3. A method as claimed in claim 2, wherein an inductively coupled plasma (ICP) source is used to provide the low energy ion bombardment.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002349032A CA2349032A1 (en) | 2001-05-28 | 2001-05-28 | Method for deep and vertical dry etching of sio2 |
| PCT/CA2002/000784 WO2002097874A1 (en) | 2001-05-28 | 2002-05-28 | Method for deep and vertical dry etching of dielectrics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002349032A CA2349032A1 (en) | 2001-05-28 | 2001-05-28 | Method for deep and vertical dry etching of sio2 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2349032A1 true CA2349032A1 (en) | 2002-11-28 |
Family
ID=4169126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002349032A Abandoned CA2349032A1 (en) | 2001-05-28 | 2001-05-28 | Method for deep and vertical dry etching of sio2 |
Country Status (2)
| Country | Link |
|---|---|
| CA (1) | CA2349032A1 (en) |
| WO (1) | WO2002097874A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9576773B2 (en) * | 2013-07-30 | 2017-02-21 | Corporation For National Research Initiatives | Method for etching deep, high-aspect ratio features into glass, fused silica, and quartz materials |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5468342A (en) * | 1994-04-28 | 1995-11-21 | Cypress Semiconductor Corp. | Method of etching an oxide layer |
| US5814563A (en) * | 1996-04-29 | 1998-09-29 | Applied Materials, Inc. | Method for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gas |
| US5711851A (en) * | 1996-07-12 | 1998-01-27 | Micron Technology, Inc. | Process for improving the performance of a temperature-sensitive etch process |
-
2001
- 2001-05-28 CA CA002349032A patent/CA2349032A1/en not_active Abandoned
-
2002
- 2002-05-28 WO PCT/CA2002/000784 patent/WO2002097874A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002097874A1 (en) | 2002-12-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |